CN107422770B - A kind of band-gap reference voltage circuit and its control method - Google Patents
A kind of band-gap reference voltage circuit and its control method Download PDFInfo
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- CN107422770B CN107422770B CN201610345155.8A CN201610345155A CN107422770B CN 107422770 B CN107422770 B CN 107422770B CN 201610345155 A CN201610345155 A CN 201610345155A CN 107422770 B CN107422770 B CN 107422770B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
The present invention provides a kind of control method of band-gap reference voltage circuit, comprising: starts the band-gap reference voltage circuit；Detect the drain voltage of the band-gap reference voltage circuit；The drain voltage is compared with threshold voltage, enters suspend mode or operating mode to control the band-gap reference voltage circuit.Additionally provide a kind of band-gap reference voltage circuit, comprising: start-up circuit is configured to control the band-gap reference voltage circuit and enters operating mode；Biasing circuit is connect with the start-up circuit, is configured to generate bias current relevant to external environment variation；Output circuit connect with the biasing circuit, is configured as output to bandgap voltage reference；Automatic control circuit, is configured to control the band-gap reference voltage circuit and enters operating mode or suspend mode, its power consumption is effectively reduced.Band-gap reference voltage circuit and its control method of the invention can detect the variation of external environment automatically, and automatically into sleep pattern, can reach most efficient reduction power consumption effect.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of band-gap reference voltage circuit and its controlling party
Method.
Background technique
With the evolution of wearable electronic technology, low-power consumption is become more and more important.Bandgap voltage reference (Band Gap)
It is particularly suited in wearable electronic technology as the voltage source for providing burning voltage if its power consumption can be reduced.
Band Gap power consumption is normally opened (always on) state in circuit, can be divided into according to its power consumption and anti-noise degree
Many different types of Band Gap circuits, such as 10 μ A (high anti-noise is applicable to various equipment), 5 μ A can be divided into (compared with highly resistance
It makes an uproar, the execution unit not being suitable in high-speed equipment, such as CPU, RF) and 1 μ A (low anti-noise, be only applicable to low-speed device).By
This is as it can be seen that the problem of usually low power consumption will be along with low anti-noise.
On the one hand, in response to the above problems, traditional improvement mode is by the Band gap of the high anti-noise and Band of low power consumption
Gap combines (for example, Band Gap circuit as shown in Figure 1), and the demand of high anti-noise, low power consumption is reached by system control.
But this improvement mode means that operation becomes more complicated, and increases the area of layout (layout) to a certain extent.
On the other hand, 1 μ A be the current technology limit, can not be made again smaller, even if be 1 μ A Band Gap for
It is still a huge loss for wearable electronic technology.
Therefore, how to be effectively reduced more power consumptions is a major issue urgently to be resolved.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In order to overcome the problems, such as that presently, there are one aspect of the present invention provides a kind of controlling party of band-gap reference voltage circuit
Method, comprising the following steps:
Start the band-gap reference voltage circuit；
Detect the drain voltage of the band-gap reference voltage circuit；
The drain voltage is compared with threshold voltage, enters suspend mode to control the band-gap reference voltage circuit
Or operating mode.
Further, described to be compared the drain voltage with threshold voltage, to control the band-gap reference voltage circuit
It include: to be compared the drain voltage with threshold voltage to export control letter into the step of suspend mode or operating mode
Number, the control signal controls whether to enter suspend mode or operating mode to the band-gap reference voltage circuit.
Further, described to be compared the drain voltage with threshold voltage, to control the band-gap reference voltage circuit
Further comprise into the step of suspend mode or operating mode: when the drain voltage is less than the threshold voltage, the control
Signal processed is low level, controls the band-gap reference voltage circuit and enters suspend mode；When the drain voltage is greater than or equal to institute
When stating threshold voltage, the control signal becomes high level from low level, controls the band-gap reference voltage circuit and enters work
Mode, to charge.
A kind of band-gap reference voltage circuit is provided according to another aspect of the present invention, comprising:
Start-up circuit, is configured to control the band-gap reference voltage circuit and enters operating mode；
Biasing circuit is connect with the start-up circuit, is configured to generate bias current relevant to external environment variation；
Output circuit connect with the biasing circuit, is configured as output to bandgap voltage reference；
Automatic control circuit, is configured to control the band-gap reference voltage circuit and enters operating mode or suspend mode, with effective
Reduce its power consumption.
Further, the automatic control circuit includes voltage detection module, and the voltage detection module is configured to described in detection
The variation of the bias current of biasing circuit, the automatic control circuit export control signal to described based on the variation of the bias current
Biasing circuit and/or the output circuit.
Further, the start-up circuit is controlled by first switch and the second switch, wherein the first switch includes the
One PMOS tube, the second switch include the first NMOS tube.
Further, the grid connection of first PMOS tube starts switch signal, and source electrode connects supply voltage, and drain electrode connects
The start-up circuit is connect, the grid connection of first NMOS tube starts switch the inversion signal of signal, and source electrode connects ground voltage,
Drain electrode connects the start-up circuit.
Further, the biasing circuit is by third switch and the 4th switch control, and the output circuit is by the 5th switch
With the 6th switch control, wherein the third switch includes the second PMOS tube, and the 4th switch includes the second NMOS tube, institute
Stating the 5th switch includes third PMOS tube, and the 6th switch includes third NMOS tube.
Further, the automatic control circuit exports the control signal to third switch and the 5th switch, and exports
The inversion signal of the control signal is to the 4th switch and the 6th switch.
Further, the source electrode of second PMOS tube connects supply voltage, and drain electrode connects the biasing circuit,
The source electrode of the third PMOS tube connects supply voltage, and drain electrode connects the output circuit,
The source electrode of second NMOS tube connects ground voltage, and drain electrode connects the biasing circuit,
The source electrode of the third NMOS tube connects ground voltage, and drain electrode connects the output circuit.
Further, the automatic control circuit includes first input end, the second input terminal, third input terminal and output end,
In,
The first input end connects the grid of first NMOS tube, for inputting enable signal；
Second input terminal connects the biasing circuit, for inputting electric leakage signal；
The third input terminal is used for input clock signal；
The output end connects the grid of second PMOS tube, third PMOS tube, the second NMOS tube and third NMOS tube,
For exporting the control signal to the grid of second PMOS tube and third PMOS tube, and to second NMOS tube and
The grid of third NMOS tube exports the inversion signal of the control signal.
Further, the automatic control circuit further includes latch module, charge control module and generation module, wherein
The latch module receives its output from the voltage detection module, and is generated based on clock signal period
Indicate high level and low level numeral output；
The charge control module receives its output from the latch module, and is generated based on clock signal period
Indicate high level and low level numeral output；
The generation module receives the output of the charge control module, and the inversion signal based on enable signal generates control
Signal processed.
Further, the charge control module is further configured to when the band-gap reference voltage circuit powers on, than
The charging time and threshold value charging time of the band-gap reference voltage circuit.
Illustratively, the automatic control circuit further includes boost module, is configured to promote the voltage of the control signal.
Illustratively, the band-gap reference voltage circuit further includes the signal switching circuit connecting with the output circuit, is matched
It is set to and controls whether to export the bandgap voltage reference.
In conclusion band-gap reference voltage circuit of the invention can detect the change of external environment (temperature or voltage) automatically
Change, and can achieve the effect that most efficient reduction power consumption automatically into sleep pattern.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows a kind of existing band-gap reference voltage circuit；
Fig. 2 shows the step flow charts for implementing calibration according to the calibration circuit of the band-gap reference voltage circuit of Fig. 1；
Fig. 3 shows the control method of band-gap reference voltage circuit according to the present invention；
Fig. 4 shows the overall structure block diagram of band-gap reference voltage circuit according to the present invention；
Fig. 5 shows the concrete structure diagram of the automatic control circuit of the band-gap reference voltage circuit of embodiment according to the present invention；
Fig. 6 shows the control flow chart of the band-gap reference voltage circuit of embodiment according to the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " other members
When part or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " is directly connected to
To " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.Art can be used although should be understood that
Language first, second, third, etc. describes various component, assembly units, area, floor and/or part, these component, assembly units, area, floor and/or portion
Dividing should not be limited by these terms.These terms are used merely to distinguish a component, assembly unit, area, floor or part and another
Component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, component, area,
Floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... on ",
" above " etc., herein can for convenience description and being used describe an elements or features shown in figure with it is other
The relationship of elements or features.It should be understood that other than orientation shown in figure, spatial relation term intention further include using with
The different orientation of device in operation.For example, then, being described as " below other elements " if the device in attached drawing is overturn
Or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary term
" ... below " and " ... under " it may include upper and lower two orientations.Device, which can be additionally orientated, (to be rotated by 90 ° or other takes
To) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed structure and step will be proposed in following description, to illustrate this
Invent the technical solution proposed.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this hair
It is bright to have other embodiments.
For a better understanding of the present invention, currently used high anti-noise and low power consumption phase are simply introduced below with reference to Fig. 1
In conjunction with bandgap voltage reference (Band Gap) circuit.
As shown in figure 1 according to the overall structure figure of current Band Gap circuit.As shown in Figure 1, Band Gap circuit
10 mainly include low power consumption Band Gap circuit 20, high power consumption Band Gap circuit 30 and calibration circuit 40.Wherein, low power consumption
Band Gap circuit 20 mainly includes current source 21 and variable resistance 22 for providing reference voltage VbgL.High power consumption Band
Gap circuit 30 mainly includes current source 31 for providing reference voltage VbgH.It calibrates circuit 40 and is used for comparison reference voltage VbgL
With reference voltage VbgH and generate calibration signal CS, calibration signal CS feeds back to low power consumption Band Gap circuit 20 to adjust reference
Voltage VbgL, i.e. the reference voltage VbgH of high accuracy are used to adjust the accuracy of reference voltage VbgH.
Specifically, calibration signal CS is for adjusting variable resistance 22, to change reference voltage VbgL.Work as reference voltage
When VbgL and VbgH approximately equal, calibration circuit 40 turns off high power consumption Band Gap circuit 30 to reduce power consumption.
Implement the step flow chart of calibration according to the calibration circuit of the Band Gap circuit of Fig. 1 as shown in Figure 2.
Low power consumption Band Gap circuit is calibrated since step 50.
In step 52, low power consumption Band Gap circuit 20 and high power consumption Band Gap circuit 30 calibrate start when all on
Electricity.
In step 54, low power consumption Band Gap circuit 20 generates reference voltage VbgL, and high power consumption Band Gap circuit
30 generate reference voltage VbgH.
In step 56, circuit 40 comparison reference voltage VbgL and reference voltage VbgH is calibrated.
In step 58, calibrates circuit 40 and determine whether reference voltage VbgL is in the predetermined threshold of reference voltage VbgH.
If so, going in step 64；If not, going to step 60.
In step 60, calibrates circuit 40 and generate calibration signal CS.
In step 62, the voltage of low power consumption Band Gap circuit is adjusted, and re-execute the steps 56.
In step 64, high power consumption Band Gap circuit 30 is powered down.
Finally, adjustment process terminates in step 66.
It follows that in order to solve the problems, such as the adjoint low anti-noise of low-power consumption, current improvement method is using high power consumption
Band Gap circuit calibrates low power consumption Band Gap circuit, due to increasing new circuit, must increase range of distribution
Long-pending and cost of manufacture, and this kind of method is complicated for operation, thus for presently, there are aiming at the problem that, the invention proposes it is a kind of newly
Band-gap reference voltage circuit and its control method, with solve the problems, such as presently, there are.
Below in conjunction with specific embodiments and the drawings the present invention is described in detail.
According to one embodiment of present invention, a kind of control method of band-gap reference voltage circuit is provided.Specifically, such as
Shown in Fig. 3, this method comprises the following steps:
Step A0 is executed, the band-gap reference voltage circuit is started.
As it is well known to the skilled in the art, the step can be completed by start-up circuit.Specifically, firstly, to starting electricity
Road electricity.Monitor power-on time, upon power-up between be greater than starting the time when, band-gap reference voltage circuit has been turned on, then starts electricity
Road power-off.
Step A1 is executed, the drain voltage of the band-gap reference voltage circuit is detected.
Then, start detection circuit, detect the electric leakage signal of band-gap reference voltage circuit.Preferably, which is
Drain voltage.Alternatively, which can also be leakage current.
Step A2 is executed, the drain voltage is compared with threshold voltage, to control the band-gap reference voltage circuit
Into suspend mode or operating mode.
Specifically, the drain voltage can be compared with threshold voltage, to generate control signal.If the drain voltage is small
In the threshold test voltage, control signal is low level, then controls signal control and turn off the band-gap reference voltage circuit, into
Enter suspend mode；If the drain voltage is greater than or equal to the threshold voltage, signal is controlled by low level and jumps to high level, then band
Gap reference voltage circuit enters operating mode, charges.
Wherein, the threshold voltage can need to preset according to circuit, so that circuit output voltage reaches desired
Accuracy.
Step A3 is executed, when band-gap reference voltage circuit charging finishes, exports the bandgap voltage reference.
Above-mentioned band-gap reference voltage circuit control method is directly entered Band Gap circuit low by increasing sleep pattern
Power consumption state does not need constantly to switch between both of which, control method is simple to save power consumption；And enter sleep pattern
Afterwards, power consumption is mainly derived from the power of leakage current consumption, it is possible to circuit power consumption be effectively reduced；And enter sleep pattern
Afterwards, it does not need to be controlled by external signal, but determines the time into sleep pattern by builtin voltage variation.
According to another embodiment of the present invention, a kind of band-gap reference voltage circuit is provided.As Fig. 4 show it is of the invention
The overall structure block diagram of bandgap voltage reference (Band Gap) circuit.As shown in figure 4, band-gap reference voltage circuit of the invention
100 mainly include start-up circuit 200, biasing circuit 300, output circuit 400, automatic control circuit 500 and switching circuit 600.Wherein,
Start-up circuit 200, biasing circuit 300 and output circuit 400 are by a pair of switch control for receiving inversion signal.
Specifically, start-up circuit 200 enters operating mode for controlling entire band-gap reference voltage circuit, by switch 210
On-off is controlled with switch 220.Illustratively, switch 210 can be realized with the first PMOS tube, be supplied wherein the source electrode of the first PMOS tube connects
Piezoelectric voltage, drain electrode connection start-up circuit 200, grid input start switch signal SW；Switch 220 can realize with the first NMOS tube,
Wherein the source electrode of the first NMOS tube connects ground voltage, drain electrode connection start-up circuit 200, and grid input starts switch the anti-of signal SW
Phase signals
Biasing circuit 300 is connect with start-up circuit 200, for generating bias current relevant to external environment variation, by
Switch 310 and switch 320 control on-off.Illustratively, switch 310 can be realized with the second PMOS tube, wherein the source of the second PMOS tube
Pole connects supply voltage, drain electrode connection biasing circuit 300, and grid connects the output end of automatic control circuit 500, believes for input control
Number TOS；Switch 320 can be realized with the second NMOS tube, wherein the source electrode of the second NMOS tube connects ground voltage, drain electrode connection biased electrical
Road 300, grid can connect the output end of automatic control circuit 500, the reverse phase for input control signal TOS by a phase inverter
Signal
Output circuit 400 is connect with biasing circuit 300, for exporting bandgap voltage reference, by switch 410 and switch 420
Control on-off.Illustratively, switch 410 can be realized with third PMOS tube, and wherein the source electrode of third PMOS tube connects supply voltage, leakage
Pole connects output circuit 400, and grid connects the output end of automatic control circuit 500, is used for input control signal TOS；Switch 420 is available
Third NMOS tube realizes that wherein the source electrode of third NMOS tube connects ground voltage, drain electrode connection output circuit 400, and grid can lead to
Cross the output end of a phase inverter connection automatic control circuit 500, the inversion signal for input control signal TOS
Automatic control circuit 500 enters operating mode or suspend mode for controlling band-gap reference voltage circuit, to be effectively reduced
The power consumption of band-gap reference circuit.
Specifically, automatic control circuit 500 includes first input end, the second input terminal, third input terminal and output end.Wherein,
First input end is for inputting enable signal (being shown as EN in Fig. 3) to control the on-off of automatic control circuit 500.Illustratively, first
Input terminal connects the grid of the first NMOS tube, and the on-off of automatic control circuit 500 is controlled with the inversion signal for starting switch signal SW.The
Two input terminals are for receiving input signal, and illustratively, the second input terminal is connect with biasing circuit 300, for inputting electric leakage signal
(LS is shown as in Fig. 4).Illustratively, electric leakage signal is drain voltage.Third input terminal (is shown for input clock signal in Fig. 4
For CLK), to control the action sequence of automatic control circuit 500.Output end shows for exporting control signal (being shown as TOS in Fig. 3)
Example ground, output end connect the grid of the second PMOS tube and the grid of third PMOS tube, for the grid and the to the second PMOS tube
The grid output control signal TOS of three PMOS tube.Illustratively, output end can connect the second NMOS tube by a phase inverter respectively
Grid and third NMOS tube grid, for the grid to the second NMOS tube and the grid of third NMOS tube output control signal
Inversion signal (be shown as in Fig. 3)。
Further, band-gap reference voltage circuit 100 of the invention further includes switching circuit 600, for providing switch letter
Number, to control whether to export the bandgap voltage reference from output circuit 400.Illustratively, the switching circuit 600 can be used
Metal-oxide-semiconductor etc. is realized.
A specific embodiment of automatic control circuit 500 is introduced below with reference to Fig. 5.
As shown in figure 5, automatic control circuit 500 includes voltage detection module 520, latch module 540, charge control module
560 and generation module 580.
Wherein, voltage detection module 520 is used to detect the drain voltage VLS of biasing circuit 300, wherein the drain voltage VLS
Change with the variation of the bias current of the biasing circuit 300.
Further, the drain voltage VLS that voltage detection module 520 will test is compared with threshold voltage VDE, with true
Determine whether drain voltage VLS is less than threshold voltage VDE.For example, biasing circuit 300 is in first state if VLS is less than VDE；
If VLS is more than or equal to VDE, biasing circuit 300 is in the second state.
In one embodiment, voltage detection module 520 includes PMOS tube 5202, PMOS tube 5204 and PMOS tube 5206.
Wherein, the source electrode of PMOS tube 5202 connects supply voltage, and grid inputs enable signal EN, the source of drain electrode connection PMOS tube 5204
Pole.PMOS tube 5204 is connected with the grid of PMOS tube 5206, and inputs electric leakage signal LS, PMOS tube 5204 and PMOS tube 5206
Drain electrode be connected, and connect latch module 540, the source electrode of PMOS tube 5206 connects ground voltage.
Latch module 540 receives its output from voltage detection module 520, and the output of latch module 540 is by detecting
The output of module 520 determines.Further, the output of latch module 540 based on clock signal period is generated.If
Latch module 540 receives the output of first state from voltage detection module 520, then the output of latch module 540 indicates low
The digital " 0 " of level., whereas if latch module 540 receives the output of the second state from detection module 520, then latch
The output of device module 540 indicates the number " 1 " of high level.
Charge control module 560 receives its output from latch module 540, i.e., digital " 1 " or " 0 ", and charge control mould
The output of block 560 is determined by the output of latch module 540.Further, charging based on clock signal period is generated
The output of control module 560.If charge control module 560 receives digital " 0 ", charge control from latch module 540
Module 560 exports digital " 0 "., whereas if charge control module 560 receives digital " 1 " from latch module 540, then fill
Electric control module 560 will export digital " 1 ".
Generation module 580 receives its output from charge control module 560, i.e., digital " 1 " or " 0 ", and generates control signal
TOS.Moreover, inversion signal of the generation module 580 by enable signal ENSignal SW control on-off is started switch, with true
Determine whether generation module 580 starts.If starting switch signal SW is high level, enable signalFor high level, then give birth to
Start at module 580；If starting switch signal SW is low level, enable signalFor low level, then generation module 580
Shutdown.Work as enable signalFor high level, i.e., when generation module 580 starts, if generation module 580 is from charge control module
560 receive digital " 0 ", and the control signal TOS of generation is low level, then band-gap reference voltage circuit is turned off, into suspend mode mould
Formula, the power consumption of entire circuit is mainly derived from the power of leakage current consumption at this time, therefore the power consumption of entire circuit is very low；If generated
Module 580 receives digital " 1 " from charge control module 560, and the control signal TOS of generation is high level, then band-gap reference electricity
Volt circuit powers on.
Further, if band-gap reference voltage circuit powers on, charge control module 560 is by band-gap reference voltage circuit
Charging time T and threshold value charging time TCH are compared, if T is less than TCH, biasing circuit 300 continues to charge；If T is big
It in TCH, then charges to output circuit 400, to export bandgap voltage reference.
In one embodiment, automatic control circuit 500 further includes boost module 510.Boost module 510 generates mould for being promoted
The voltage for the cut-off signals TOS that block 580 generates, effectively to control the on-off of band-gap reference voltage circuit.
Illustrate the control process of band-gap reference voltage circuit of the invention below with reference to Fig. 6.
As shown in fig. 6, powering in step 601 to start-up circuit 200, start-up circuit 200 is started to work to start band
Gap reference voltage circuit 100, then goes to step 602.
In step 602, starts time T and be greater than threshold value starting time Tth, illustrate that band-gap reference voltage circuit 100 has opened
It is dynamic to finish, then go to step 603.
In step 603, start-up circuit 200 is powered off, and goes to step 604.
In step 604, automatic control circuit 500 is powered on, automatic control circuit 500 is started to work, and step 605 is then gone to.
In step 605, automatic control circuit 500 provides threshold test voltage VDE, and judges whether drain voltage VLS is less than threshold value
Detect voltage VDE.If drain voltage VLS is less than threshold test voltage VDE, step 606 is gone to；If drain voltage VLS is greater than
Or be equal to threshold test voltage VDE, then go to step 607.
In step 606, band-gap reference voltage circuit 100 is turned off, into suspend mode.
In step 607, starts band-gap reference voltage circuit 100 and charges into operating mode to biasing circuit 300,
Then go to step 608.
In step 608, charging time T and threshold value charging time TCH are compared by charge control module 560, and big in T
When TCH, step 609 is gone to.
It in step 609, charges to output circuit 400, to export bandgap voltage reference.
By disclosed above it is found that Band Gap circuit of the invention has following special compared with traditional Band Gap circuit
Point:
(1) increase mode: by increasing automatic control circuit, adding additional sleep on traditional Band Gap circuit base
Mode；
(2) simplify circuit: Band Gap circuit does not need between two kinds of Band Gap circuits of low-power consumption and high power consumption constantly
Switching, but it is directly entered low power consumpting state；
(3) reduce power consumption: after entering sleep pattern, the power of circuit consumption is mainly derived from the function of leakage current consumption
Rate, it is possible to circuit power consumption be effectively reduced；
(4) it self-contr ol: after entering sleep pattern, does not need to be controlled by external signal, but is become by builtin voltage
Change the time for determining to enter sleep pattern.
Based on the above feature, Band Gap circuit of the invention can detect the change of external environment (temperature or voltage) automatically
Change, and can achieve the effect that most efficient reduction power consumption automatically into sleep pattern.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (12)
1. a kind of control method of band-gap reference voltage circuit, which comprises the following steps:
Start the band-gap reference voltage circuit；
Detect the drain voltage of the band-gap reference voltage circuit；
The drain voltage is compared with threshold voltage to export control signal, with control the band-gap reference voltage circuit into
Enter suspend mode or operating mode,
Wherein the control includes when the drain voltage is less than the threshold voltage, and the control signal is low level, control
The band-gap reference voltage circuit enters suspend mode；When the drain voltage is greater than or equal to the threshold voltage, the control
Signal processed becomes high level from low level, controls the band-gap reference voltage circuit and enters operating mode, to charge.
2. a kind of band-gap reference voltage circuit characterized by comprising
Start-up circuit, is configured to control the band-gap reference voltage circuit and enters operating mode；
Biasing circuit is connect with the start-up circuit, is configured to generate bias current relevant to external environment variation；
Output circuit connect with the biasing circuit, is configured as output to bandgap voltage reference；
Automatic control circuit is configured as output to control signal, enters operating mode or suspend mode to control the band-gap reference voltage circuit
Mode, its power consumption is effectively reduced,
Wherein the control includes the control signal when the drain voltage of the band-gap reference voltage circuit is less than threshold voltage
For low level, controls the band-gap reference voltage circuit and enter suspend mode；When the drain voltage is greater than or equal to the threshold value
When voltage, the control signal becomes high level from low level, controls the band-gap reference voltage circuit and enters operating mode, with
It charges.
3. band-gap reference voltage circuit as claimed in claim 2, which is characterized in that the automatic control circuit includes voltage detecting mould
Block, the voltage detection module are configured to detect the variation of the bias current of the biasing circuit, the automatic control circuit base
Control signal is exported to the biasing circuit and/or the output circuit in the variation of the bias current.
4. band-gap reference voltage circuit as claimed in claim 2, which is characterized in that the start-up circuit is by first switch and
Two switch controls.
5. band-gap reference voltage circuit as claimed in claim 4, which is characterized in that the first switch includes the first PMOS
Pipe, the second switch include the first NMOS tube, wherein the grid input of first PMOS tube starts switch signal, source electrode connects
Supply voltage is connect, drain electrode connects the start-up circuit, and the grid input of first NMOS tube starts switch the reverse phase letter of signal
Number, source electrode connects ground voltage, and drain electrode connects the start-up circuit.
6. band-gap reference voltage circuit as claimed in claim 5, which is characterized in that the biasing circuit is by third switch and the
Four switch controls, the output circuit export the control signal by the 5th switch and the 6th switch control, the automatic control circuit
To third switch and the 5th switch, and the inversion signal for exporting the control signal is opened to the 4th switch and the 6th
It closes.
7. band-gap reference voltage circuit as claimed in claim 6, which is characterized in that wherein, the third switch includes second
PMOS tube, the 4th switch includes the second NMOS tube, and the 5th switch includes third PMOS tube, and the 6th switch includes
Third NMOS tube.
8. band-gap reference voltage circuit as claimed in claim 7, which is characterized in that the automatic control circuit includes the first input
End, the second input terminal, third input terminal and output end, wherein
The first input end connects the grid of first NMOS tube, for inputting enable signal；
Second input terminal connects the biasing circuit, for inputting electric leakage signal；
The third input terminal is used for input clock signal；
The output end connects the grid of second PMOS tube, third PMOS tube, the second NMOS tube and third NMOS tube, is used for
The control signal is exported to the grid of second PMOS tube and third PMOS tube, and to second NMOS tube and third
The grid of NMOS tube exports the inversion signal of the control signal.
9. band-gap reference voltage circuit as claimed in claim 3, which is characterized in that the automatic control circuit further includes latch mould
Block, charge control module and generation module, wherein
The latch module receives its output from the voltage detection module, and expression is generated based on clock signal period
High level and low level numeral output；
The charge control module receives its output from the latch module, and expression is generated based on clock signal period
High level and low level numeral output；
The generation module receives the output of the charge control module, and the inversion signal based on enable signal generates control letter
Number.
10. band-gap reference voltage circuit as claimed in claim 9, which is characterized in that the charge control module is further matched
It is set to when the band-gap reference voltage circuit powers on, the charging time of the band-gap reference voltage circuit and threshold value charging
Time.
11. band-gap reference voltage circuit as claimed in claim 9, which is characterized in that the automatic control circuit further includes boosting mould
Block is configured to promote the voltage of the control signal.
12. band-gap reference voltage circuit as claimed in claim 2, which is characterized in that the band-gap reference voltage circuit also wraps
The signal switching circuit connecting with the output circuit is included, is configured to control whether to export the bandgap voltage reference.
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| CN201610345155.8A CN107422770B (en) | 2016-05-23 | 2016-05-23 | A kind of band-gap reference voltage circuit and its control method |
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| CN107422770B true CN107422770B (en) | 2019-09-27 |
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| CN117008676A (en) * | 2023-08-17 | 2023-11-07 | 荣湃半导体（上海）有限公司 | Self-starting circuit for band-gap reference circuit |
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| CN107422770A (en) | 2017-12-01 |
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