CN107422416B - A kind of mixed type Bloch phasmon optical waveguide structure - Google Patents
A kind of mixed type Bloch phasmon optical waveguide structure Download PDFInfo
- Publication number
- CN107422416B CN107422416B CN201710480808.8A CN201710480808A CN107422416B CN 107422416 B CN107422416 B CN 107422416B CN 201710480808 A CN201710480808 A CN 201710480808A CN 107422416 B CN107422416 B CN 107422416B
- Authority
- CN
- China
- Prior art keywords
- refractive index
- optical waveguide
- layer
- bloch
- phasmon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of mixing Bloch phasmon optical waveguides with compared with strong laser field limitation capability and low transmission loss, including metal nanometer line, multi-layer film structure and the low refractive index dielectric buffer layer being clipped between metal nanometer line and multi-layer film structure in clad.With the presence of metal nanometer line and the adjacent low refractive index dielectric buffering layer region of multi-layer film structure, reduces the optical field distribution range of the waveguiding structure with can dramatically, realize and the two-dimensional sub-wavelength of transmission light field is constrained；Simultaneously because the presence of multilayer film dielectric structure, can be significantly reduced the transmission loss of transmission light field.The mixed light wave guide structure overcomes the contradiction of existing surface plasmon optical waveguide and Bloch surface plasmon optical waveguide between light field limitation capability and transmission loss, solve the problems, such as large scale, loss and interference in high integration fiber waveguide device, the realization for superelevation integrated level chip of light waveguide provides possibility.
Description
Technical field
The present invention relates to optical waveguide technique fields, and in particular to a kind of low loss mixed type cloth Lip river of sub-wavelength light field constraint
Conspicuous phasmon optical waveguide.
Background technique
Bloch surface wave is to be present in one of periodic medium alternating layer photon band gap mode of electromagnetic wave.It is this
Mode is present near the interface of medium and medium, has with the surface plasma-wave for being present in metal and dielectric surface many
Similarity is both constrained at two kinds of substance interfaces, causes the field at interface to enhance, and equal in interface two sides
Along the exponential decaying in direction perpendicular to interface.Compared with the surface plasma-wave that can only be excited by P polarization, Bloch table
Surface wave can be excited by the material and structure of appropriately designed periodic dielectric in any wavelength, with random polarization state.Another party
Face, because not having the presence of metal in structure, the loss ratio surface plasma-wave of Bloch surface wave is much smaller.Pass through ratio
Compared with, it is seen that, the excitation of Bloch surface wave depends on the design of photon crystal structure, almost without the limit of wavelength and polarization
System, and its loss is much smaller compared with surface plasma-wave.Thus such as photonic device, in terms of be expected to it is realisation
It can more superior design.
However, the photonic device structure of existing excitation Bloch surface wave is to add plating one outside the photonic crystal of truncation
Layer dielectric material realize, the excitation of Bloch surface wave is derived from the reflection of light beam in photonic band gap structure, refraction is concerned with
Synergistic effect, thus its restriction ability is relatively poor, is unfavorable for the integrated of photonic device.It can be with excitating surface plasma wave
Due to the presence of metal in surface phasmon structure, restriction ability is stronger, field energy can be constrained in bulk
Much smaller than the region of its free space transmission wavelength, lateral optical field distribution can be limited in tens nanometers of even smaller ranges
It is interior, it can be more than the limitation of diffraction limit.But it for most of conventional surface phasmon device architectures, is propped up
The surface plasmon mode held all has higher transmission loss.For example, the metal of deep sub-wavelength mould field limitation may be implemented
Nanowire structure is difficult to realize long distance transmission.Transmission light field can be strapped in deep sub-wavelength magnitude by it, but obtain this strong mould
The cost of field containment is huge transmission loss, and the transmission range for the surface plasmon mode for causing it to support is generally limited
In micron dimension, it is unable to satisfy the requirement transmitted at a distance.These limitations are for dependency structure in integrated photonic device
Further application produces detrimental effect.
In order to overcome defect of the existing most of surface phasmon optical waveguide structures in terms of transmission characteristic, more effectively
Implementation pattern loss and the balance of limitation capability between the two.Mixed type phasmon optical waveguide structure is suggested, this compound
The guided mode that type optical waveguide mode characteristic is better than the other surface phasmon optical waveguide structures of the overwhelming majority previously studied is special
Property, can contradiction between active balance light field limitation capability and modal loss, no matter from light field fetter ability, or from transmission
The angle of loss, mixed type surface phasmon structure all show huge potentiality and advantage.
Due to the inspiration by the above-mentioned surface phasmon composite waveguide structure studied energetically, about Bloch table
The device architecture of face excimer current research hot spot relevant with Bloch surface wave is designed to.The Konopsky of E Ke institute is studied
Group uses photon crystal structure for substrate, plates one layer of gold thin film again on it, excites in being formed by mixed structure similar
Long-distance surface phasmon mode, it is often relatively short that the distance for constraining but transmitting compared with strong laser field may be implemented in this kind of waveguide.
Descrovi et al. realizes effective guiding to Bloch surface wave using in photon crystal structure surface load two-dimensional medium item,
Realize lower transmission loss and larger transmission range, but cost be its mould field size often it is relatively large be unfavorable for waveguide and
Device integrates.
Summary of the invention
The present invention is in order to overcome poor (the i.e. mould field size of existing medium Bloch surface plasmon optical waveguide field limitation capability
Greatly), it is difficult to realize the defect that high density waveguide is integrated, provides one kind and be provided simultaneously with low transmission loss and compared with high field limitation capability
Mixed type Bloch phasmon optical waveguide structure.
A kind of mixed type Bloch phasmon optical waveguide structure provided by the invention, especially a kind of sub-wavelength light field is about
The low loss mixed type Bloch phasmon optical waveguide structure of beam comprising clad, metal nanometer line, low refractive index dielectric
Buffer layer and multi-layer film structure element, wherein metal nanometer line is in clad, also, low refractive index dielectric buffer layer
Between metal nanometer line and multi-layer film structure element.
Wherein, low refractive index dielectric buffer layer, which can be, covers cover surface, or is also possible to partly or entirely
It is embedded in clad.
Wherein, the multi-layer film structure element, which can be, covers cover surface, or is also possible to partly or entirely
It is embedded in clad.
In the structure effect of multi-layer film structure element be can be by adjusting the object of its clad or in which certain layer of structure
Rationality matter, and then excite Bloch surface plasmon.
In an example, the multi-layer film structure element can be by two kinds or more all dielectrics with different refractivity
The alternately laminated formation of material layer；Can also by one of transparent dielectric, metal, absorbing material, left hand artificial material etc. or
A variety of compositions.
In a more preferable example, multi-layer film structure element successively includes multilayered medium material layer, high refractive index medium
Item, wherein multilayered medium material layer is alternatively formed by two or more layer of dielectric material with different refractivity.
In a more preferable example, multi-layer film structure element successively includes transparent dielectric substrate, multilayered medium material
Layer, high refractive index medium item, wherein multilayered medium material layer is by two or more dielectric material with different refractivity
Layer is alternatively formed.
In an example, the Refractive Index of Material of the high refractive index medium item be higher than low refractive index dielectric buffer layer and
The Refractive Index of Material of clad.
In an example, the material of low refractive index dielectric buffer layer and clad can be identical material or different materials.
In an example, the maximum value of the Refractive Index of Material of low refractive index dielectric buffer layer and clad and the high folding
The ratio of the Refractive Index of Material of rate medium strip is penetrated less than 0.75.
In an example, high refractive index medium material strips can in the mixed type Bloch phasmon optical waveguide structure
Using any one of titanium dioxide, silicon nitride, zinc sulphide, cerium oxide, zirconium oxide.
In an example, low refractive index dielectric material buffer in the mixed type Bloch phasmon optical waveguide structure
Any one of silica, bifluoride magnesium, ice crystal can be used in layer.
Wherein it is preferred in the multilayered medium material layer with different refractivity in the multi-layer film structure element, it can
To be that high refractive index medium material layer with low refractive index dielectric material layer replaces superposition.Wherein, the high refractive index medium material
Layer with the high refractive index and low-refraction in low refractive index dielectric material layer, be the two in contrast；That is high refractive index medium
The refractive index of material layer is higher than the refractive index of low refractive index dielectric material layer.
Wherein, it is highly preferred that the Refractive Index of Material of the high refractive index medium material layer and the high refractive index medium item
Can be identical or different, or it is highly preferred that the material of the high refractive index medium material layer and the high refractive index medium item can
With identical or different, and it is preferably identical, and the more preferably described high refractive index medium material layer and the high refractive index medium item
Material be selected from any one of titanium dioxide, silicon nitride, zinc sulphide, cerium oxide, zirconium oxide.
Wherein, it is highly preferred that the material of the low refractive index dielectric material layer and the low refractive index dielectric buffer layer is rolled over
The rate of penetrating can be identical or different, or it is highly preferred that the low refractive index dielectric material layer and the low refractive index dielectric buffer layer
Material can be identical or different, it is and preferably identical, and the more preferably described low refractive index dielectric material layer and the low refraction
The material of rate dielectric buffer layer is selected from any one of silica, bifluoride magnesium, ice crystal.
In a more preferable example, the high refractive index medium material of the multilayered medium material layer in multi-layer film structure element
Using titanium dioxide；The low refractive index dielectric material of multilayered medium material layer in multi-layer film structure element uses silica；
High refractive index medium item in multi-layer film structure element uses titanium dioxide；Low refractive index dielectric buffer layer uses silica.
Each layer of thickness selects in multi-layer film structure element in the mixed type Bloch phasmon optical waveguide structure
So that can produce photon band gap in multi-layer film structure element, and then excite Bloch surface plasmon under certain operation wavelength.
High refractive index medium item in the mixed type Bloch phasmon optical waveguide structure in multi-layer film structure element
Connect with multilayered medium material layer, can be used for adjusting excitation position of the Bloch surface plasmon in photon band gap.
In an example, i-th layer of thickness d in multi-layer film structureiIt is determined by following formula:
Wherein λ is the wavelength for transmitting optical signal, ni、θiRespectively i-th layer of medium refraction index and light wave enter at i-th layer
Firing angle.Wherein, i is 1 to the natural number between the multi-layer film structure maximum number of plies.
In an example, the height in the mixed type Bloch phasmon optical waveguide structure in multi-layer film structure element
The width of index medium item is not less than 0.6 times of the wavelength of transmitted optical signal；Multi-layer film structure element in the structure
In high refractive index medium item altitude range no more than 0.2 times of wavelength of transmitted optical signal.
The cross sectional shape of high refractive index medium item can be positive in the mixed type Bloch phasmon optical waveguide structure
Rectangular, rectangle, circle, ellipse or any one of trapezoidal.
In an example, in the mixed type Bloch phasmon optical waveguide structure low refractive index dielectric buffer layer with
High refractive index medium item connects in multi-layer film structure.
In an example, the width range of the low refractive index dielectric buffer layer is not less than the wave of transmitted optical signal
Long 0.6 times；The altitude range of the low refractive index dielectric buffer layer is not more than 0.1 times of the wavelength of transmitted optical signal.
The cross sectional shape of low refractive index dielectric buffer layer can be in the mixed type Bloch phasmon optical waveguide structure
It is square, rectangle, circle, ellipse or any one of trapezoidal.
The radius of metal nanometer line is 10-200nm in the mixed type Bloch phasmon optical waveguide structure.
In the mixed type Bloch phasmon optical waveguide structure material of metal nanometer line be can generate surface etc. from
The respective alloy of any one of the gold, silver of sub- excimer, aluminium, copper, titanium, nickel, chromium or the compound material of different metal
Material.
In an example, the material of metal nanometer line is using gold.
In an example, the radius of metal nanometer line is preferably 10-200nm, more preferably 20-180nm, more preferably
50-150nm, more preferably 70-130nm, more preferably 100-120nm.
Mixed type Bloch phasmon optical waveguide structure of the invention has the advantage that
1. the low refractive index dielectric buffer layer of mixed type Bloch phasmon optical waveguide structure designed by the present invention
Material can be using low-index materials or other low refractive index polymer materials such as silica, with existing Bloch table
Face excimer optical waveguide is compared, and an enhancement effect further enhances, and mould field limitation capability greatly improves.
2. mixed type Bloch phasmon optical waveguide structure designed by the present invention and existing medium/metal nanometer line
Surface plasmon optical waveguide structure is compared, and the available significant decrease of transmission loss maintains sub-wavelength mould field
Limitation capability.
3. the dielectric layer by mentioned mixed type Bloch phasmon optical waveguide structure can use semiconductor material, should
Two-dimensional structure can be easily applied in the chip of light waveguide of high integration with semiconductor planar chip manufacture process matching.
Detailed description of the invention
Fig. 1 is mixed type Bloch phasmon optical waveguide structure schematic diagram.
Fig. 2 is mixed type Bloch phasmon optical waveguide structure schematic diagram described in example 1.
Fig. 3 is the partial enlarged view of mixed type Bloch phasmon optical waveguide structure described in example 1.
Fig. 4 is to transmit mixed type Bloch phasmon optical waveguide described in example 1 when the wavelength of optical signal is 1.55 μm
The electric-field intensity distribution curve of mixed mode light field.Wherein, Fig. 4 (a) is the distribution curve of electric field strength Y-component along the x axis,
Fig. 4 (b) is the distribution curve of electric field strength Y-component along the y axis.
Fig. 5 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 1
The effective refractive index of the mixed mode of transmission is with height hbChange curve.
Fig. 6 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 1
The transmission range of the mixed mode of transmission is with height hbChange curve.
Fig. 7 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 1
The normalization effective core area of the mixed mode of transmission is with height hbChange curve.
Fig. 8 is mixed type Bloch phasmon optical waveguide structure figure described in example 2.
Fig. 9 is the partial enlarged view of mixed type Bloch phasmon optical waveguide structure described in example 2.
Figure 10 is to transmit mixed type Bloch phasmon optical waveguide described in example 2 when the wavelength of optical signal is 1.55 μm
The electric-field intensity distribution curve of mixed mode light field.Wherein, Figure 10 (a) is that the distribution of electric field strength Y-component along the x axis is bent
Line, Figure 10 (b) are the distribution curve of electric field strength Y-component along the y axis.
Figure 11 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 2
The effective refractive index of the mixed mode of transmission is with height hbChange curve.
Figure 12 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 2
The transmission range of the mixed mode of transmission is with height hbChange curve.
Figure 13 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example 2
The normalization effective core area of the mixed mode of transmission is with height hbChange curve.
Specific embodiment
Referring to Fig.1, mixed type Bloch phasmon optical waveguide structure provided by the invention includes clad 1；Metal is received
Rice noodles 2；Low refractive index dielectric buffer layer 3；Multi-layer film structure element 4.Metal nanometer line 2 is embedded in clad 1.In Fig. 1, low folding
The part for penetrating the top of rate dielectric buffer layer 3 and multi-layer film structure element 4 is also embedded in clad 1, but it is not necessary to
's.
The mode characteristic of mixing Bloch phasmon is the important indicator of characterization mixing Bloch phasmon optical waveguide.
Wherein mode characteristic parameter mainly includes effective refractive index real part, transmission range and normalization effective core area.
Transmission range L is defined as distance when electric field strength on any interface decays to initial value l/e, expression formula are as follows:
L=λ/[4 π/Im (neff)] (1)
Wherein Im (neff) be mode effective refractive index imaginary part, λ be transmission optical signal wavelength.
The calculation expression of effective core area is as follows:
Aeff=(∫ ∫ W (r) dA)2/{max(W(r))} (2)
Wherein, AeffFor effective core area, W(r)For the energy density of surface wave, definition are as follows:
Wherein, Re expression takes real part, and E (r) is the electric field of surface wave, and H (r) is the magnetic field of surface wave, and ε (r) is conductivity,
μ0For space permeability.Normalization effective core area is the effective core area and free space diffraction that (3) formula is calculated
The ratio between mode field area of the limit.The mode field area of free space diffraction limit is defined as follows:
A0=λ2/4 (4)
Wherein, λ is the wavelength for transmitting optical signal.Therefore, effective core area A is normalized are as follows:
A=Aeff/A0 (5)
The mould field limitation capability of the size representation pattern of effective core area is normalized, situation of the value less than 1 is corresponding sub-
The dimension constraint of wavelength.
Example 1: low refractive index dielectric buffer layer regional cross section is the optical waveguide of rectangle
Fig. 2 is the structure chart of mixed type Bloch phasmon optical waveguide described in example 1.Fig. 3 is mixed type described in example 1
The partial enlarged view of Bloch phasmon optical waveguide.201 be clad, ncFor its refractive index；202 be metal nanometer line, nmFor
Its refractive index, rmFor its radius；203 be low refractive index dielectric buffer layer, nbFor its refractive index, WbFor its width, hbFor its height
Degree；204 be high refractive index medium item, ndFor its refractive index, WdFor its width, hdFor its height；205 be the more of multi-layer film structure
Layer layer of dielectric material；206 be the low refractive index dielectric layer of the multilayered medium material layer of multi-layer film structure element, nlIt is reflected for it
Rate, hlFor its height；207 be the high refractive index medium layer of the multilayered medium material layer of multi-layer film structure, nhFor its refractive index, hh
For its height, (multiple low refractive index dielectric layers 206, high refractive index medium layer 207, which are overlapped mutually, constitutes multilayered medium material layer
205)；208 be the transparent dielectric substrate of multilayered medium material layer.
In this example, the wavelength of the optical signal of transmission is chosen to be 1.55 μm, and the material of clad 201 is set as air,
Refractive index is 1；The material of metal nanometer line 202 is gold, and the refractive index at 1.55 mum wavelengths is 0.55+i*11.5；Low refraction
The material of rate dielectric buffer layer 203 is set as silica, refractive index 1.444；The material of high refractive index medium item 204 is set as
Titanium dioxide, refractive index 2.483；The multilayered medium material layer of multilayered medium material layer 205 in multi-layer film structure element
Periodicity be 10；The material of the low refractive index dielectric layer 206 of multilayered medium material layer is set as silica, and refractive index is
1.444；The material of the high refractive index medium layer 207 of multilayered medium material layer is set as titanium dioxide, refractive index 2.483；Thoroughly
The material of bright base of dielectric 208 is set as ZF10 glass, refractive index 1.668089.
In this example, the radius r of metal nanometer line 202m=100nm；The width W of low refractive index dielectric buffer layer 203b
=3 μm, height hbValue range be 1~20nm；Wd=3 μm of the width of high refractive index medium item 204, height hdValue model
It encloses for 50~200nm；The height h of low refractive index dielectric layer 206l=385nm；The height h of high refractive index medium layer 207h=
350nm。
The above-mentioned waveguiding structure in the present embodiment is emulated using full-vector finite element method, is calculated 1.55 μm
The mode distributions and mode characteristic of Bloch phasmon mode are mixed at wavelength.
Fig. 4 is transmit mixed type Bloch phasmon optical waveguide described in example when the wavelength of optical signal is 1.55 μm mixed
The electric-field intensity distribution curve of Bloch phasmon mode light field is closed, wherein the height h of low refractive index dielectric buffer layer 203b
=10nm, the height h of high refractive index medium item 204d=50nm.Wherein, Fig. 4 (a) be electric field strength Y-component along the x axis
Distribution curve, Fig. 4 (b) are the distribution curve of electric field strength Y-component along the y axis.From fig. 4, it can be seen that the mixed type Bloch
The electric field strength profile of phasmon optical waveguide light field has apparent field enhancement effect in low refractive index dielectric buffer layer.
Fig. 5 is to transmit to pass in mixed type Bloch phasmon optical waveguide described in example when the wavelength of optical signal is 1.55 μm
The effective refractive index of defeated mixing Bloch phasmon mode is with height hbChange curve.As seen from Figure 5, the mixed type
The effective refractive index of the mixing Bloch phasmon mode of Bloch phasmon optical waveguide is with height hbIncrease and reduces.
Fig. 6 is to transmit to pass in mixed type Bloch phasmon optical waveguide described in example when the wavelength of optical signal is 1.55 μm
The transmission range of defeated mixing Bloch phasmon mode is with height hbChange curve.As seen from Figure 6, the mixed type cloth
The transmission range of the mixing Bloch phasmon mode of the conspicuous phasmon optical waveguide in Lip river is between 38~52 microns, and with height
Spend hbIncrease and increases.Remove periodic multilayer layer of dielectric material (corresponding h under the same termsh=hl=0, other parameters are kept not
Become), the transmission range of obtained mixed type surface plasmon optical waveguide mode is 8~11 microns.It is found that the mixing cloth
The conspicuous phasmon optical waveguide in Lip river has lower transmission loss.
Fig. 7 is to transmit to pass in mixed type Bloch phasmon optical waveguide described in example when the wavelength of optical signal is 1.55 μm
The normalization effective core area of defeated mixing Bloch phasmon mode is with height hbChange curve.As seen from Figure 7, institute
The mode field area of mixing Bloch phasmon mode is stated with height hbIncrease and increase, it is known that, mix Bloch phasmon
The increase of the transmission range of mode is to sacrifice mould field limitation capability as cost.Normalize effective mould field face as seen from the figure simultaneously
Product still very little, and it is much smaller than 1, illustrate that the mixing Bloch phasmon optical waveguide has the mould field limitation energy of sub-wavelength
Power.
Example 2: low refractive index dielectric buffer layer regional cross section is trapezoidal optical waveguide
Fig. 8 is the structure chart of mixed type Bloch phasmon optical waveguide described in example 2.Fig. 9 is mixed type described in example 2
The partial enlarged view of Bloch phasmon optical waveguide.801 be clad, ncFor its refractive index；802 be metal nanometer line, nmFor
Its refractive index, rmFor its radius；803 be low refractive index dielectric buffer layer, nbFor its refractive index, Wb1For its hem width degree of going to the bottom, Wb2
For base width thereon, hbFor its height；804 be high refractive index medium item, ndFor its refractive index, WdFor its width, hdFor its height
Degree；805 be the multilayered medium material layer of multi-layer film structure element；806 be the low refractive index dielectric layer of multilayered medium material layer, nl
For its refractive index, hlFor its height；807 be the high refractive index medium layer of multilayered medium material layer, nhFor its refractive index, hhFor it
Highly (multiple low refractive index dielectric layers 806, high refractive index medium layer 807, which are overlapped mutually, constitutes multilayered medium material layer 805)；
808 be transparent dielectric substrate.
In this example, the wavelength of the optical signal of transmission is chosen to be 1.55 μm, and the material of clad 801 is set as air,
Refractive index is 1；The material of metal nanometer line 802 is gold, and the refractive index at 1.55 mum wavelengths is 0.55+i*11.5；Low refraction
The material of rate dielectric buffer layer 803 is set as silica, refractive index 1.444；The material of high refractive index medium item 804 is set as
Titanium dioxide, refractive index 2.483；The multilayered medium material layer of the multilayered medium material layer 805 of multi-layer film structure element
Periodicity is 10；The material of low refractive index dielectric layer 806 is set as silica, refractive index 1.444；High refractive index medium layer
807 material is set as titanium dioxide, refractive index 2.483；The material of transparent dielectric substrate 808 is set as ZF10 glass,
Refractive index is 1.668089.
In this example, the radius r of metal nanometer line 802m=100nm；The bottom of low refractive index dielectric buffer layer 803
Width Wb1=1 μm, upper bottom edge width Wb2=0.55 μm；Height hbValue range be 1~20nm；High refractive index medium item 804
Width Wd=3 μm, height hdValue range be 50~200nm；The height h of low refractive index dielectric layer 806l=385nm；It is high
The height h of index dielectric layer 807h=350nm.
The above-mentioned waveguiding structure in the present embodiment is emulated using full-vector finite element method, is calculated 1.55 μm
The mode distributions and mode characteristic of Bloch phasmon mode are mixed at wavelength.
Figure 10 is to transmit mixed type Bloch phasmon optical waveguide described in example when the wavelength of optical signal is 1.55 μm
The electric-field intensity distribution curve of Bloch phasmon mode light field is mixed, wherein the height of low refractive index dielectric buffer layer 803
hb=20nm, the height h of high refractive index medium item 804d=50nm.Wherein, Figure 10 (a) be electric field strength Y-component along the x axis
Distribution curve, Figure 10 (b) be the distribution curve of electric field strength Y-component along the y axis.As seen from Figure 10, the mixed type cloth
The electric field strength profile of the conspicuous phasmon optical waveguide light field in Lip river has apparent field enhancement effect in low refractive index dielectric buffer layer.
Figure 11 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example
The effective refractive index of the mixing Bloch phasmon mode of transmission is with height hbChange curve.As seen from Figure 11, described mixed
The effective refractive index of the mixing Bloch phasmon mode of mould assembly Bloch phasmon optical waveguide is with height hbIncrease and subtracts
It is small.
Figure 12 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example
The transmission range of the mixing Bloch phasmon mode of transmission is with height hbChange curve.As seen from Figure 12, the mixing
Type Bloch phasmon optical waveguide mixing Bloch phasmon mode transmission range between 37~43 microns, and
With height hbIncrease and increases.Remove periodic multilayer layer of dielectric material (corresponding h under the same termsh=hl=0, other parameters are protected
Hold constant), the transmission range of obtained mixed type surface plasmon optical waveguide mode is 8~11 microns.It is found that described mixed
Closing Bloch phasmon optical waveguide has lower transmission loss.
Figure 13 is transmitted when the wavelength of optical signal is 1.55 μm in mixed type Bloch phasmon optical waveguide described in example
The normalization effective core area of the mixing Bloch phasmon mode of transmission is with height hbChange curve.It can by Figure 13
See, the mode field area of the mixing Bloch phasmon mode is with height hbIncrease and increase, it is known that, mix Bloch etc. from
The increase of the transmission range of polariton modes is to sacrifice mould field limitation capability as cost.Normalize effective mould as seen from the figure simultaneously
Scene product still very little, and it is much smaller than 1, illustrate that there is the mixing Bloch phasmon optical waveguide mould field of sub-wavelength to limit
Ability.
The simulation result of example 1 and example 2 shows that the low refractive index dielectric in waveguiding structure according to the present invention buffers
The cross sectional shape of layer region can be realized using rectangle, trapezoidal and its similar shape.
To sum up, the present invention changes high refractive index two-dimensional medium loaded type Bloch surface plasmon optical waveguide structure
Into, integrated metal nano wire on the basis of the said structure, and low folding is introduced between high refractive index medium item and metal nanometer line
Rate dielectric buffer layer composition composite construction is penetrated, obtained novel mixing Bloch phasmon optical waveguide while being both effectively reduced
Its mould field size maintains lower transmission loss again.Additionally due to the high and low refractive index dielectric layer of mentioned waveguide can be adopted
With semiconductor material, therefore the two-dimensional structure can be easily applied to high integration with semiconductor planar chip manufacture process matching
In chip of light waveguide, for realizing that large-scale integrated optical path has a very important significance.
Finally it should be noted that the embodiment in above each attached drawing is only to illustrate mixing Bloch of the invention etc. from sharp
First optical waveguide structure, but it is unrestricted.Although the invention is described in detail with reference to an embodiment, the ordinary skill people of this field
Member is it should be appreciated that modification or equivalent replacement of the technical solution of the present invention are made, without departure from the essence of technical solution of the present invention
Mind and range, are intended to be within the scope of the claims of the invention.
Claims (7)
1. a kind of mixed type Bloch phasmon optical waveguide structure, which is characterized in that including clad, in clad
The low-refraction that metal nanometer line further includes multi-layer film structure element and is clipped between metal nanometer line and multi-layer film structure element
Dielectric buffer layer；The multi-layer film structure element successively includes transparent dielectric substrate, multilayered medium material layer, high refractive index Jie
Matter item, wherein multilayered medium material layer is replaced with low refractive index dielectric material layer by high refractive index medium material layer and is formed by stacking；
The Refractive Index of Material of high refractive index medium item is higher than the Refractive Index of Material of low refractive index dielectric buffer layer and clad, low refraction
The material of rate dielectric buffer layer and clad is identical material or different materials, the material of low refractive index dielectric buffer layer and clad
The ratio of the Refractive Index of Material of the maximum value and high refractive index medium item of material refractive index is less than 0.75.
2. optical waveguide structure according to claim 1, which is characterized in that the width model of the low refractive index dielectric buffer layer
0.6 times for enclosing the wavelength not less than transmitted optical signal；The altitude range of the low refractive index dielectric buffer layer is not more than institute
0.1 times of the wavelength of the optical signal of transmission.
3. optical waveguide structure according to claim 1, which is characterized in that the width of the high refractive index medium item is not less than
The altitude range of 0.6 times of the wavelength of the optical signal transmitted, the high refractive index medium item is not more than transmitted optical signal
0.2 times of wavelength.
4. optical waveguide structure according to claim 1, which is characterized in that the material of metal nanometer line is energy in the structure
Generate any one of the gold, silver of surface plasmons, aluminium, copper, titanium, nickel, chromium respective alloy or difference
The material of metal composite；The low refractive index dielectric buffer layer is using any one in silica, bifluoride magnesium, ice crystal
Kind.
5. optical waveguide structure according to claim 1, which is characterized in that the high refractive index medium item uses titanium dioxide
Any one of titanium, silicon nitride, zinc sulphide, cerium oxide, zirconium oxide.
6. optical waveguide structure according to claim 1, which is characterized in that
A) the high refractive index medium material layer is identical as the Refractive Index of Material of the high refractive index medium item；
B) the low refractive index dielectric material layer is identical as the Refractive Index of Material of the low refractive index dielectric buffer layer.
7. optical waveguide structure according to claim 1, which is characterized in that the radius of metal nanometer line in the structure
For 10-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480808.8A CN107422416B (en) | 2017-06-22 | 2017-06-22 | A kind of mixed type Bloch phasmon optical waveguide structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480808.8A CN107422416B (en) | 2017-06-22 | 2017-06-22 | A kind of mixed type Bloch phasmon optical waveguide structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107422416A CN107422416A (en) | 2017-12-01 |
| CN107422416B true CN107422416B (en) | 2019-08-13 |
Family
ID=60426619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710480808.8A Active CN107422416B (en) | 2017-06-22 | 2017-06-22 | A kind of mixed type Bloch phasmon optical waveguide structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107422416B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108957628A (en) * | 2018-09-20 | 2018-12-07 | 广西师范大学 | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
| CN112114398A (en) * | 2020-05-11 | 2020-12-22 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | Mixed Bloch surface excimer optical waveguide structure |
| CN111880260B (en) * | 2020-07-03 | 2022-08-30 | 南京邮电大学 | Long transmission distance Tamm plasmon ridge waveguide |
| CN112596153B (en) * | 2020-12-09 | 2022-03-15 | 武汉大学 | On-chip sub-wavelength bound waveguide and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6482382A (en) * | 1987-09-24 | 1989-03-28 | Canon Kk | Bloch line memory |
| CN102169206A (en) * | 2011-04-28 | 2011-08-31 | 北京航空航天大学 | low loss surface plasmon optical waveguide |
| CN103956549A (en) * | 2014-05-16 | 2014-07-30 | 宋明霞 | Surface plasma transmission device, manufacturing method and application |
| CN104409965A (en) * | 2014-07-18 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | A Bragg reflection waveguide GaSb base semiconductor laser |
| CN106773101A (en) * | 2017-03-23 | 2017-05-31 | 中国科学技术大学 | It is a kind of to excite BSW to realize the optical chip of Beams coupling based on grating |
-
2017
- 2017-06-22 CN CN201710480808.8A patent/CN107422416B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6482382A (en) * | 1987-09-24 | 1989-03-28 | Canon Kk | Bloch line memory |
| CN102169206A (en) * | 2011-04-28 | 2011-08-31 | 北京航空航天大学 | low loss surface plasmon optical waveguide |
| CN103956549A (en) * | 2014-05-16 | 2014-07-30 | 宋明霞 | Surface plasma transmission device, manufacturing method and application |
| CN104409965A (en) * | 2014-07-18 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | A Bragg reflection waveguide GaSb base semiconductor laser |
| CN106773101A (en) * | 2017-03-23 | 2017-05-31 | 中国科学技术大学 | It is a kind of to excite BSW to realize the optical chip of Beams coupling based on grating |
Non-Patent Citations (3)
| Title |
|---|
| 《Bloch surface waves confined in one dimension with a single polymeric nanofibre》;Ruxue Wang et.al.;《Nature Communications》;20170203;第3页图2、附图说明 |
| 《Enhanced magnetic response in a》;Hai Liu et.al;《OPTICS LETTERS》;20110701;全文 |
| 《In-plane 2D focusing of surface waves by》;A. Angelini et.al.;《OPTICS LETTERS》;20141115;全文 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107422416A (en) | 2017-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107422416B (en) | A kind of mixed type Bloch phasmon optical waveguide structure | |
| Lee et al. | Hyperbolic metamaterials: fusing artificial structures to natural 2D materials | |
| Gong et al. | Photonic crystals: principles and applications | |
| Mahmoodi et al. | Existence conditions of high‐k modes in finite hyperbolic metamaterials | |
| Badugu et al. | Radiative decay engineering 6: Fluorescence on one-dimensional photonic crystals | |
| Orlov et al. | Controlling light with plasmonic multilayers | |
| US7184641B2 (en) | Surface-plasmon index guided (SPIG) waveguides and surface-plasmon effective index guided (SPEIG) waveguides | |
| Ding et al. | Broadband Omnidirectional Diversion of Light in Hybrid Plasmonic‐Photonic Heterocrystals | |
| CN101630038A (en) | Low-loss surface plasmon optical waveguide structure | |
| Sipe et al. | Nanocomposite materials for nonlinear optics based on local field effects | |
| Scheffold et al. | Transport through amorphous photonic materials with localization and bandgap regimes | |
| Singh et al. | Theoretical investigation of enhanced sensing property in 1D TiO2/SiO2 periodic layers containing a defect layer of the nanocomposite with different radii of silver nanoparticles in the host liquid crystal | |
| Tserkezis et al. | Tailoring plasmons with metallic nanorod arrays | |
| CN102608700A (en) | Hybrid slit optical waveguide | |
| Karpiński et al. | Long-range plasmons and epsilon-near-zero modes in ultraviolet | |
| Baojun et al. | Surface plasmon polaritons in plasma-dielectric-magnetic plasma structure | |
| CN102590938A (en) | Multilayer mixed surface plasmon polariton optical waveguide | |
| Osada et al. | Gigantic plasmon resonance effects on magneto-optical activity of molecularly thin ferromagnets near gold surfaces | |
| Panyaev et al. | Energy flux optimization in 1D multiperiodic four-component photonic crystals | |
| CN112114398A (en) | Mixed Bloch surface excimer optical waveguide structure | |
| Cvetkov et al. | Structure and optical properties of hybrid metal-dielectric colloidal photonic crystals | |
| Zhang et al. | Multiple modes of surface plasmonic polaritons in transversely-truncated metal/dielectric superlattices | |
| CN115421231A (en) | Sub-wavelength mixed Bloch surface excimer optical waveguide | |
| CN111505750B (en) | Bloch surface excimer optical device for enhancing graphene goos-Hanchen effect | |
| Li | Enhancement of Optical Properties in Artificial Metal-dielectric Structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |