CN107408412B - 存储器装置及存储器系统 - Google Patents
存储器装置及存储器系统 Download PDFInfo
- Publication number
- CN107408412B CN107408412B CN201580077306.XA CN201580077306A CN107408412B CN 107408412 B CN107408412 B CN 107408412B CN 201580077306 A CN201580077306 A CN 201580077306A CN 107408412 B CN107408412 B CN 107408412B
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- CN
- China
- Prior art keywords
- data
- bits
- memory
- syndrome
- controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 208000011580 syndromic disease Diseases 0.000 claims abstract description 88
- 238000005201 scrubbing Methods 0.000 claims abstract description 72
- 238000001514 detection method Methods 0.000 claims description 28
- 230000004044 response Effects 0.000 claims description 13
- 208000033748 Device issues Diseases 0.000 claims 1
- 238000012937 correction Methods 0.000 description 146
- 230000006870 function Effects 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 230000005415 magnetization Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
- G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1677—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0409—Online test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Detection And Correction Of Errors (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562131113P | 2015-03-10 | 2015-03-10 | |
US62/131,113 | 2015-03-10 | ||
PCT/JP2015/076371 WO2016143168A1 (en) | 2015-03-10 | 2015-09-10 | Memory device and memory system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107408412A CN107408412A (zh) | 2017-11-28 |
CN107408412B true CN107408412B (zh) | 2021-01-15 |
Family
ID=56879983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580077306.XA Expired - Fee Related CN107408412B (zh) | 2015-03-10 | 2015-09-10 | 存储器装置及存储器系统 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10482990B2 (zh) |
CN (1) | CN107408412B (zh) |
RU (1) | RU2682843C1 (zh) |
TW (1) | TW201633301A (zh) |
WO (1) | WO2016143168A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10312944B2 (en) * | 2017-03-17 | 2019-06-04 | Micron Technology, Inc. | Error correction code (ECC) operations in memory for providing redundant error correction |
KR102410021B1 (ko) * | 2017-11-20 | 2022-06-21 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 메모리 모듈을 갖는 메모리 시스템 및 그 메모리 시스템에서의 데이터 처리 방법 |
KR102687054B1 (ko) * | 2018-10-12 | 2024-07-22 | 수퍼멤, 인크. | 오류 정정 및 데이터 클리닝 회로가 구비된 메모리 시스템 |
US11461623B2 (en) * | 2018-10-18 | 2022-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for defect-tolerant memory-based artificial neural network |
US11249842B2 (en) * | 2019-05-24 | 2022-02-15 | Texas Instruments Incorporated | Error correcting codes for multi-master memory controller |
US11379156B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Write type indication command |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101510448A (zh) * | 2008-02-14 | 2009-08-19 | 爱特梅尔公司 | 用于存储器的错误检测/校正方案 |
CN102820049A (zh) * | 2011-06-09 | 2012-12-12 | 三星电子株式会社 | 用于刷新以及数据清理存储器件的方法和装置 |
WO2013014974A1 (en) * | 2011-07-26 | 2013-01-31 | Kabushiki Kaisha Toshiba | Memory controller, semiconductor storage device, and decoding method |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6292869B1 (en) * | 1998-08-31 | 2001-09-18 | International Business Machines Corporation | System and method for memory scrub during self timed refresh |
US6349390B1 (en) * | 1999-01-04 | 2002-02-19 | International Business Machines Corporation | On-board scrubbing of soft errors memory module |
US20030009721A1 (en) * | 2001-07-06 | 2003-01-09 | International Business Machines Corporation | Method and system for background ECC scrubbing for a memory array |
DE102005040916A1 (de) * | 2005-08-30 | 2007-03-08 | Robert Bosch Gmbh | Speicheranordnung und Betriebsverfahren dafür |
KR101303518B1 (ko) | 2005-09-02 | 2013-09-03 | 구글 인코포레이티드 | Dram 적층 방법 및 장치 |
US7647526B1 (en) * | 2006-12-06 | 2010-01-12 | Netapp, Inc. | Reducing reconstruct input/output operations in storage systems |
US8176388B1 (en) * | 2007-06-20 | 2012-05-08 | Marvell Israel (Misl) Ltd. | System and method for soft error scrubbing |
JP4956640B2 (ja) | 2009-09-28 | 2012-06-20 | 株式会社東芝 | 磁気メモリ |
US8347175B2 (en) | 2009-09-28 | 2013-01-01 | Kabushiki Kaisha Toshiba | Magnetic memory |
US9037928B2 (en) * | 2012-01-01 | 2015-05-19 | Mosys, Inc. | Memory device with background built-in self-testing and background built-in self-repair |
US9679664B2 (en) | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
US9081693B2 (en) * | 2012-08-17 | 2015-07-14 | Freescale Semiconductor, Inc. | Data type dependent memory scrubbing |
US9454451B2 (en) * | 2013-02-11 | 2016-09-27 | Arm Limited | Apparatus and method for performing data scrubbing on a memory device |
JP6213345B2 (ja) * | 2014-03-31 | 2017-10-18 | 富士通株式会社 | 転送装置、決定方法、及びデータ処理装置 |
KR102178137B1 (ko) * | 2014-08-26 | 2020-11-12 | 삼성전자주식회사 | 반도체 메모리 장치, 이의 에러 정정 방법 및 이를 포함하는 메모리 시스템 |
US9612908B2 (en) * | 2015-02-20 | 2017-04-04 | Qualcomm Incorporated | Performing memory data scrubbing operations in processor-based memory in response to periodic memory controller wake-up periods |
US20160336971A1 (en) * | 2015-05-14 | 2016-11-17 | U.S.A. Represented By The Administrator Of The National Aeronautics And Space Administration | Consensus decoding algorithm for generalized reed-solomon codes |
-
2015
- 2015-09-10 CN CN201580077306.XA patent/CN107408412B/zh not_active Expired - Fee Related
- 2015-09-10 WO PCT/JP2015/076371 patent/WO2016143168A1/en active Application Filing
- 2015-09-10 RU RU2017130281A patent/RU2682843C1/ru active
- 2015-10-30 TW TW104135893A patent/TW201633301A/zh unknown
-
2017
- 2017-09-08 US US15/699,833 patent/US10482990B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101510448A (zh) * | 2008-02-14 | 2009-08-19 | 爱特梅尔公司 | 用于存储器的错误检测/校正方案 |
CN102820049A (zh) * | 2011-06-09 | 2012-12-12 | 三星电子株式会社 | 用于刷新以及数据清理存储器件的方法和装置 |
WO2013014974A1 (en) * | 2011-07-26 | 2013-01-31 | Kabushiki Kaisha Toshiba | Memory controller, semiconductor storage device, and decoding method |
Also Published As
Publication number | Publication date |
---|---|
RU2682843C1 (ru) | 2019-03-21 |
WO2016143168A1 (en) | 2016-09-15 |
US20170372798A1 (en) | 2017-12-28 |
US10482990B2 (en) | 2019-11-19 |
TW201633301A (zh) | 2016-09-16 |
CN107408412A (zh) | 2017-11-28 |
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Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220112 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210115 |