CN107403820A - Display device - Google Patents
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- CN107403820A CN107403820A CN201710007030.9A CN201710007030A CN107403820A CN 107403820 A CN107403820 A CN 107403820A CN 201710007030 A CN201710007030 A CN 201710007030A CN 107403820 A CN107403820 A CN 107403820A
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- display device
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- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2003—Display of colours
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0456—Pixel structures with a reflective area and a transmissive area combined in one pixel, such as in transflectance pixels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
Abstract
A kind of display device, including the first substrate, luminescence component and the first catoptric arrangement.Luminescence component is configured on the first substrate, and wherein the height of luminescence component is more than or equal to 1 μm and less than or equal to 20 μm.First catoptric arrangement corresponds to luminescence component configuration, and the light that wherein luminescence component is sent is projected after being reflected via the first catoptric arrangement by the first substrate.The display device of the present invention can be applied to the display device or display with double faces of large area.
Description
Technical field
The present invention relates to a kind of display device, and more particularly to a kind of display device with catoptric arrangement.
Background technology
Due to light emitting diode (light emitting diode, LED) display device have it is active luminous, highlighted
The advantages such as degree, high-contrast, low-power consumption, and compared to Organic Light Emitting Diode (organic light emitting diode,
OLED) display device has the advantages that longer life, therefore turns into one of technology that new display is greatly developed in recent years.For
Meet high-resolution demand, emitting diode display device is just micro- towards being arranged with array by driving component array substrate
The direction of the light emitting diode composition of meter ruler cun is developed.
The content of the invention
The present invention provides a kind of display device, can be applied to the display device or display with double faces of large area.
The display device of the present invention includes the first substrate, luminescence component and the first catoptric arrangement.Luminescence component is configured at
On first substrate, wherein the height of luminescence component is more than or equal to 1 μm and less than or equal to 20 μm.First catoptric arrangement correspondingly light group
Part is configured, and the light that wherein luminescence component is sent is projected after being reflected via the first catoptric arrangement by the first substrate.
Based on above-mentioned, in the display device of the present invention, the light emission direction of luminescence component can be controlled by catoptric arrangement, with
The light that luminescence component is sent is set to be projected after being reflected via the first catoptric arrangement by the first substrate.
For features described above of the invention and advantage can be become apparent, special embodiment below, and accompanying drawing shown in cooperation
It is described in detail below.
Brief description of the drawings
Fig. 1 is the partial cutaway schematic of the display device of one embodiment of the invention；
Fig. 2 is the partial cutaway schematic of the display device of another embodiment of the present invention；
Fig. 3 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 4 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 5 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 6 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 7 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 8 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Fig. 9 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 10 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 11 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 12 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 13 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 14 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 15 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 16 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 17 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 18 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 19 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 20 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 21 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 22 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 23 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 24 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 25 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 26 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 27 is the partial cutaway schematic of the display device of one more embodiment of the present invention；
Figure 28 is the partial cutaway schematic of the display device of one more embodiment of the present invention.
Embodiment
The direction term being previously mentioned in following examples, such as：Upper and lower, left and right, front or rear etc., only it is with reference to additional attached
The direction of figure.Therefore, the direction term used is intended to be illustrative and not intended to limit the present invention.For example, it is described below
In, when describing the first object on the second object, the embodiment that the first object and the second object directly contact can be included,
The embodiment that the first object and the second object do not contact directly can be included.In addition, do not connect directly in the first object and the second object
In tactile embodiment, it is also possible to having other objects or simply simple space between the first object and the second object.
Fig. 1 is the diagrammatic cross-section of the display device according to one embodiment of the invention.Fig. 1 is refer to, the present embodiment
Display device 50A includes the first substrate 102, the catoptric arrangement 122 of luminescence component 118 and first.Luminescence component 118 is configured at
On one substrate 102, the wherein height h1 of luminescence component 118 is more than or equal to 1 μm and less than or equal to 20 μm.If luminescence component 118
Height h1 is less than 1 μm, then may weaken the structural strength of luminescence component 118 and produce the defects of more.If luminescence component 118
Height h1 is more than 20 μm, then may reduce the luminous efficiency of luminescence component 118 or the efficiency of its radiating.In another embodiment,
The height h1 of luminescence component 118 can be more than or equal to 2 μm and less than or equal to 12 μm, or can be more than or equal to 5 μm and less than or equal to 10 μm.
First catoptric arrangement 122 configures corresponding to luminescence component 118.In the present embodiment, luminescence component 118 is configured in the first substrate
102 and second between substrate 120, and the first catoptric arrangement 122 be configured in the second substrate 120 in face of luminescence component 118
Side.
In the display device 50A of the present embodiment, the light that luminescence component 118 is sent can be by the first catoptric arrangement 122
Reflect and outwards projected (as direction of the arrows shown in fig) from the first substrate 102.For further, final display surface is to show
It is located at the side of the first substrate 102 in equipment 50A.Therefore, the design of the present embodiment can simply change the hair of luminescence component 118
Light direction so that display device 50A display direction is relatively easy to meet different design requirements.
Display device 50A may also include drive component T.Drive component T is configured on the first substrate 102, and luminous group
Part 118 can stagger with drive component T.Consequently, it is possible to luminescence component 118 is not required to be bonded on drive component T.Therefore, will send out
Optical assembly 118 is bonded to before the first substrate 102, can be not required to set between the substrate 102 of luminescence component 118 and first flat
Layer.Accordingly, when luminescence component 118 is bonded into the first substrate 102, will not cause the substrate 102 of luminescence component 118 and first it
Between flatness layer by thermal softening the problem of, and then the contraposition precision of engagement can be improved.
Special patterned process can be carried out on first catoptric arrangement 122 of the present embodiment so that reflected light line
Projected towards more consistent direction and be easy to provide the display effect of high brightness.For example, the first catoptric arrangement 122 is for example
It is metal level or Omni-directional reflector (omnidirectional reflective mirror；ODM), it is, for example, metal level
The sandwich construction formed with oxide skin(coating).The material of metal level can include aluminium and silver, and the material of oxide skin(coating) can include
Silica.In one embodiment, display device 50A can also include conductive through hole 121 and electrode 123.Electrode 123 is configured in
On first substrate 102, and conductive through hole 121 can be electrically connected between the first catoptric arrangement 122 and electrode 123.Electrode 123 can
Shared signal is transmitted, and this shared signal sequentially can be transferred to luminous via the catoptric arrangement 122 of conductive through hole 121 and first
The electrode 116 of component 118.In one embodiment, the material of conductive through hole 121 and electrode 123 may include metal or other lead
Electric material.
The display device 50A of the present embodiment can also include wavelength conversion layer 124, be configured at the side of the first substrate 102.
In the present embodiment, wavelength conversion layer 124 may be disposed at the side of the remote luminescence component 118 of the first substrate 102.In other implementations
In example, wavelength conversion layer 124 also may be disposed at the side of the neighbouring luminescence component 118 of the first substrate 102.In one embodiment,
Orthographic projection of the wavelength conversion layer 124 on the first substrate 102 and orthographic projection part of the luminescence component 118 on the first substrate 102
It is overlapping.In other embodiments, orthographic projection of the wavelength conversion layer 124 on the first substrate 102 serves as a contrast with luminescence component 118 first
Orthographic projection on bottom 102 can also be completely overlapped.Described orthographic projection refers to that through projection thing (such as be wavelength conversion layer herein
124) subpoint of the incident line being parallel to each other of each point on perspective plane (being, for example, the surface of the first substrate 102 herein) on
Combination, and the above-mentioned a plurality of incident line being parallel to each other is perpendicular to above-mentioned perspective plane.Consequently, it is possible to the light that luminescence component 118 provides
Line can first pass through wavelength conversion layer 124 before outside project.Wavelength conversion layer 124 can be used to sent luminescence component 118
The wavelength shift of light.For example, luminescence component 118 can provide black light, be turned black light by wavelength conversion layer 124
It is changed to desired coloured light, such as feux rouges, blue light or green glow etc..Or luminescence component 118 can also provide visible ray, then by ripple
Long conversion layer 124 is it will be seen that light is converted to desired coloured light, such as feux rouges, blue light or green glow etc..In the present embodiment, wavelength
Conversion layer 124 can be quantum dot layer.In other embodiments, wavelength conversion layer 124 also can be quantum dot layer, it is phosphor layer, glimmering
Light bisque or its combination.
In other embodiments, also above-mentioned wavelength conversion layer 124 can be replaced with chromatic filter layer.In other words, can incite somebody to action
Wavelength conversion layer or chromatic filter layer select a side for being configured at the first substrate 102.
The luminescence component 118 of the present embodiment is by taking vertical LED as an example, but can also be adopted in other embodiments
With crystal-coated light-emitting diodes or other luminescence components.Luminescence component 118 can be the light emitting diode of the size of micron grade.
In one embodiment, the length and width of luminescence component 118 can be respectively smaller than equal to 300 μm and more than or equal to 1 μm.In other embodiment
In, the length and width of luminescence component 118 can also be respectively smaller than equal to 100 μm and more than or equal to 2 μm, less than or equal to 20 μm and be more than or equal to
3 μm or less than or equal to 10 μm and more than or equal to 5 μm.
The first insulating barrier 127 is may be configured with first substrate 102 of the present embodiment.In the present embodiment, the first insulating barrier
127 can be sandwich construction, and it includes the insulating barrier 126 being sequentially configured on the first substrate 102 and insulating barrier 128.Insulating barrier 126
There is opening P10 with insulating barrier 128, and luminescence component 118 is configured at opening P10.In other embodiments, the first insulating barrier
127 are alternatively single layer structure, and the first insulating barrier 127 has opening P10, and luminescence component 118 is configured at opening P10.Insulating barrier
126 with insulating barrier 128 it is at least one for example can be selected shading material, (but not limited to) black matrix" (black can be used as
matrix；BM).Therefore, it can block what neighbouring luminescence component was sent when display device 50A is provided with multiple luminescence components
Light, and then reach purpose that adjacent luminescence component do not interfere with each other to lift display quality.In addition, the insulation of shading material
Layer 126 or insulating barrier 128 can also cover drive component T, be viewed by a user with avoiding drive component T extraneous ray of reflecting,
Influence display quality.Furthermore insulating barrier 126 can also protect drive component T.Insulating barrier 126 is with the opening P10's of insulating barrier 128
Side wall and the angle theta of the first substrate 102 are, for example, less than equal to 150 ° and more than or equal to 60 °.In another embodiment, be open P10
The angle theta of side wall and the first substrate 102 be, for example, less than equal to 135 ° and more than or equal to 90 °.First catoptric arrangement 122 is, for example,
Substantially covering opening P10 is close to the side of the second substrate 120.Wavelength conversion layer 124 may be disposed at the first substrate 102 relative to
The side of luminescence component 118, and can substantially cover opening P10.The second insulating barrier 132 is may also be configured with first substrate 102, its
Fill up opening P10 and covering luminescence component 118 and insulating barrier 128.In one embodiment, the second insulating barrier 132 can be flat
Layer.In addition, the first catoptric arrangement 122 is for example formed on the second insulating barrier 132.In the present embodiment, can also be exhausted by the 3rd
Edge layer 133 is configured between the second substrate 120 and the second insulating barrier 132.3rd insulating barrier 133 can be located at the first catoptric arrangement
122 the same side, so that the first adjacent catoptric arrangement 122 can be isolated from each other.In one embodiment, the 3rd insulating barrier 133
The material of shading can be selected in material, as (but not limited to) black matrix", further to avoid between adjacent luminescence component
Interfere with each other.
Drive component T includes grid G, gate insulation layer GI, channel layer CH, source S and drain D.Channel layer CH material bag
Include (but not limited to)：Non-crystalline silicon or oxide semiconductor material, wherein oxide semiconductor material are for example including (but unlimited
In)：Indium gallium zinc oxide (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide, tin oxide (SnO), the oxidation of indium zinc
Thing, gallium zinc oxide (Gallium-Zinc Oxide, GZO), zinc tin oxide (Zinc-Tin Oxide, ZTO) or indium tin oxygen
Compound etc..That is, in the present embodiment, drive component T is, for example, amorphous silicon film transistor or oxide semiconductor
Thin film transistor (TFT).However, the present invention is not limited thereto.In other embodiments, drive component T can also be low temperature polycrystalline silicon
Thin film transistor (TFT), silicon substrate formula thin film transistor (TFT) or microcrystalline silicon thin film transistor.In addition, in the present embodiment, drive component T category
In bottom-gate (bottom gate) transistor.However, the present invention is not limited thereto.In other embodiments, drive component T
It may belong to top-gated pole (top gate) transistor.
In addition, being provided with gate insulation layer GI between grid G and channel layer CH, wherein gate insulation layer GI is conformally
(conformally) formed on the first substrate 102 and cover grid G.Gate insulation layer GI material can be (but not limited to)：Nothing
Machine material, organic material or its combination, wherein inorganic material is, for example, (but not limited to)：Silica, silicon nitride, silicon oxynitride,
Or the stack layer of above-mentioned at least two kinds materials；Organic material is, for example, (but not limited to)：Polyimides system resins, epoxy system resin
Or acryl system resin Polymer material.In addition, source S is located at channel layer CH top, and source S and data with drain D
Line DL is electrically connected with.In addition, in the present embodiment, the 4th insulating barrier BP is also covered with above drive component T, can protect
Drive component T.4th insulating barrier BP is conformally formed on the first substrate 102, and the 4th insulating barrier BP material can be (but not
It is limited to)：Inorganic material, organic material or its combination, wherein inorganic material is, for example, (but not limited to)：Silica, silicon nitride, nitrogen
The stack layer of silica or above-mentioned at least two kinds materials；Organic material is, for example, (but not limited to)：Polyimides system resins, ring
Oxygen system resin or acryl system resin Polymer material.In the present embodiment, display device 60A may also include circuit storage
Capacitor Cst, it includes Top electrode 106a and bottom electrode 106b, and Top electrode 106a is for example connected with drain D, and bottom electrode 106b is
Shared electrode.
The luminescence component 118 of the present embodiment can include electrode 108, p type semiconductor layer 110, multiple quantum well construction 112, N
Type semiconductor layer 114 and electrode 116, wherein electrode 108 are configured on the 4th insulating barrier BP, and can be wrong with drive component T
Open.P type semiconductor layer 110, multiple quantum well construction 112 and n type semiconductor layer 114 be located at electrode 108 and electrode 116 it
Between, and multiple quantum well construction 112 is between n type semiconductor layer 114 and p type semiconductor layer 110.In the present embodiment, send out
The height h of optical assembly 118 represents the bottom surface of electrode 108 to the distance of the top surface of electrode 116.In addition, display device 50A can also be wrapped
Containing transparent conducting structures 104, it is configured between the 4th insulating barrier BP and luminescence component 118, and is electrically connected with luminescence component 118
Electrode 108 and drive component T drain D.In one embodiment, transparent conducting structures 104 can be sandwich construction.Furthermore electricity
Pole 116 can be electrically connected with the first catoptric arrangement 122 so that shared signal can be via electrode 123, conductive through hole 121 and first
Catoptric arrangement 122 is sequentially transferred to electrode 116.In one embodiment, electrode 123 can be located on the 4th insulating barrier BP.At other
In embodiment, electrode 123 can with drive component T grid G, source S, drain D, Top electrode 106a or bottom electrode 106b extremely
Few one is located on same layer, that is, passes through the patterning process with along with by same material layer and formed.
Referring to Fig. 1 and Fig. 2, the display device 50B shown in Fig. 2 is similar to Fig. 1 display device 50A.The of Fig. 2
One substrate 102 has depression R, and wavelength conversion layer 124 is configured in depression R, to form Embedded wavelength conversion layer.At this
In embodiment, wavelength conversion layer 124 can be formed to trim the bottom surface (as shown in Figure 2) of the first substrate 102.In other embodiment
In, wavelength conversion layer 124 can not also trim the bottom surface of the first substrate 102, that is, wavelength conversion layer 124 can be formed to protrude or
It is depressed in the bottom surface of the first substrate 102.
Referring to Fig. 1 and Fig. 3, the display device 50C shown in Fig. 3 is similar to Fig. 1 display device 50A.Fig. 3's is aobvious
Show that equipment 50C also includes chromatic filter layer 125, wherein wavelength conversion layer 124 is configured at the first substrate 102 and chromatic filter layer
Between 125.In addition, orthographic projection of the chromatic filter layer 125 on the first substrate 102 and luminescence component 118 are on the first substrate 102
Orthographic projection it is least partially overlapped.In the present embodiment, wavelength conversion layer 124 can be for example phosphor layer, but be not limited.
Referring to Fig. 2 and Fig. 4, the display device 50D shown in Fig. 4 is similar to Fig. 2 display device 50B.Fig. 4's is aobvious
Show that equipment 50D also includes chromatic filter layer 125, wherein wavelength conversion layer 124 is configured at the first substrate 102 and chromatic filter layer
Between 125.In addition, orthographic projection of the chromatic filter layer 125 on the first substrate 102 and luminescence component 118 are on the first substrate 102
Orthographic projection it is least partially overlapped.In the present embodiment, wavelength conversion layer 124 can be for example phosphor layer, but be not limited.
Fig. 5 to Fig. 8 is the diagrammatic cross-section according to the display device of several embodiments of the present invention.
Referring to Fig. 1 and Fig. 5, Fig. 5 display device 50E and Fig. 1 display device 50A are similar.Luminous group of Fig. 5
Part 144 is crystal-coated light-emitting diodes.In the present embodiment, luminescence component 144 includes electrode 134, p type semiconductor layer 136, more
It is exhausted that weight quantum well structures 138, n type semiconductor layer 140 and electrode 142, wherein electrode 134 with electrode 142 are configured in the 4th
On edge layer BP, and it can stagger with drive component T.N type semiconductor layer 140 is configured on electrode 132 and electrode 142, and p-type is partly led
Body layer 136 is configured between n type semiconductor layer 140 and electrode 134.In addition, transparent conducting structures 104 are electrically connected with electrode 134
With drain D, and display device 50E also includes transparent conducting structures 105, and it is electrically connected with electrode 142.In the present embodiment,
Height h2 represents the bottom surface of electrode 134 or electrode 142 the distance between to the top surface of n type semiconductor layer 140.Luminescence component 144
The light sent can be reflected by the first catoptric arrangement 122 and outwards be projected (as indicated by the arrows in fig. 5) from the first substrate 102.
Referring to Fig. 5 and Fig. 6, the display device 50F shown in Fig. 6 is similar to Fig. 5 display device 50E.The of Fig. 6
One substrate 102 has depression R, and wavelength conversion layer 124 is configured in depression R, to form Embedded wavelength conversion layer.At this
In embodiment, wavelength conversion layer 124 can be formed to trim the bottom surface (as shown in Figure 6) of the first substrate 102.In other embodiment
In, wavelength conversion layer 124 can not also trim the bottom surface of the first substrate 102, that is, wavelength conversion layer 124 can be formed to protrude or
It is depressed in the bottom surface of the first substrate 102.
Referring to Fig. 5 and Fig. 7, the display device 50G shown in Fig. 7 is similar to Fig. 5 display device 50E.Fig. 7's is aobvious
Show that equipment 50G also includes chromatic filter layer 125, wherein wavelength conversion layer 124 is configured at the first substrate 102 and chromatic filter layer
Between 125.In addition, orthographic projection of the chromatic filter layer 125 on the first substrate 102 and luminescence component 144 are on the first substrate 102
Orthographic projection it is least partially overlapped.In the present embodiment, wavelength conversion layer 124 can be phosphor layer, but be not limited.
Referring to Fig. 8 and Fig. 6, the display device 50H shown in Fig. 8 is similar to Fig. 6 display device 50F.Fig. 8's is aobvious
Show that equipment 50H also includes chromatic filter layer 125, wherein wavelength conversion layer bag 124 is configured at the first substrate 102 and chromatic filter layer
Between 125.In addition, orthographic projection of the chromatic filter layer 125 on the first substrate 102 and luminescence component 144 are on the first substrate 102
Orthographic projection it is least partially overlapped.In the present embodiment, wavelength conversion layer 124 can be phosphor layer, but be not limited.
Fig. 9 is the diagrammatic cross-section of the display device according to one embodiment of the invention.Referring to Fig. 1, Fig. 5 and figure
9, Fig. 9 display device 50I has multiple sub-pixel areas, includes sub-pixel area 50Ia, sub-pixel area 50Ib and sub-pixel area
50Ic.Sub-pixel area 50Ia is similar in appearance to the display device 50A shown in Fig. 1, and sub-pixel area 50Ib and sub-pixel area 50Ic are similar
In the display device 50E shown in Fig. 5, only Fig. 9 display device 50I multiple luminescence components can send different-waveband respectively
Light, therefore Fig. 9 display device 50I can not include wavelength conversion layer.In structure, multiple luminescence components can be vertical light-emitting two
Pole pipe, crystal-coated light-emitting diodes or its combination.However, the present invention is not limited with the type of multiple luminescence components, affiliated neck
Having usually intellectual in domain can voluntarily adjust on demand.
Figure 10 to Figure 17 is the diagrammatic cross-section according to the display device of several embodiments of the present invention.
Fig. 1 and Figure 10 are refer to, Figure 10 display device 50J and Fig. 1 display device 50A are similar.Figure 10 display is set
Standby 50J can include multiple luminescence components, and part luminescence component is luminous towards the first substrate 202, and other luminescence component directions
Second substrate 220 is luminous, and forms the display device of double-side.In one embodiment, display device 50J may also include such as figure
The first insulating barrier 127 and the second insulating barrier 132 shown in 1, display is omitted herein.
Figure 10 display device 50J includes the first substrate 202, luminescence component 210a, luminescence component 210b, the first reflection knot
The substrate 220 of structure 216 and second.First substrate 202 has drive component T1 and drive component T2, and luminescence component 210a and hair
Optical assembly 210b is configured between the first substrate 202 and the second substrate 220.
First substrate 202 can be transparent material layer, such as glass.Drive component T1 can be transistor, its include grid G 1,
Gate insulation layer GI1, channel layer CH1, source S 1 and drain D 1.Similarly, drive component T2 can be transistor, and it includes grid
G2, gate insulation layer GI2, channel layer CH2, source S 2 and drain D 2.Grid G 1 is configured in the first substrate 202 with grid G 2
On, and gate insulation layer GI1 and gate insulation layer GI2 are located on the first substrate 202, and between grid G 1 and channel layer CH1 with
Between gate pole G2 and channel layer CH2.
Luminescence component 210a and luminescence component 210b are discretely configured at the first substrate 202, and can respectively with drive component
T1 and drive component T2 stagger.In structure, the luminescence component 210a and luminescence component 210b of the present embodiment can be rectilinear
Light emitting diode.
Luminescence component 210a can include electrode 204a, ray structure 206a and electrode 208a, and wherein electrode 204a can be with
Drive component T1 is electrically connected with.Ray structure 206a can be included as shown in Figure 1 between electrode 204a and electrode 208a
P type semiconductor layer, multiple quantum well construction and n type semiconductor layer, it omits display herein.Display device 50J can also be included
Transparent conducting structures 212a, it is configured between electrode 204a and drive component T1, and extend be electrically connected with electrode 204a with
Drain D 1.In addition, display device 50J can also include transparent conducting structures 214a, it is configured at the second substrate 220, and and electrode
208a is electrically connected with.
Similarly, luminescence component 210b can include electrode 204b, ray structure 206b and electrode 208b, wherein electrode
204b can be electrically connected with drive component T2, and can be staggered with drive component T2.Ray structure 206b is located at electrode 204b and electricity
Between the 208b of pole, and p type semiconductor layer as shown in Figure 1, multiple quantum well construction and n type semiconductor layer can be also included, its
Display is omitted herein.Display device 50J can also include transparent conducting structures 212b, and it is configured at electrode 204b and drive component T2
Between, and extend to be electrically connected with electrode 204b and drain D 2.In addition, display device 50J can also include transparent conducting structures
214b, it is configured at the second substrate 220, and is electrically connected with electrode 208b.
First catoptric arrangement 216 includes the first catoptric arrangement 216a and the first catoptric arrangement 216b.First catoptric arrangement
216a can cover luminescence component 210a, and only expose light-emitting area 218as of the luminescence component 210a towards the first substrate 202.Another
One catoptric arrangement 216b can cover luminescence component 210b, and only expose light-emitting areas of the luminescence component 210b towards the second substrate 220
218b.In the present embodiment, the first catoptric arrangement 216a and the first catoptric arrangement 216b can be metal level.It is anti-according to configuration first
Structure 216a and the first catoptric arrangement 216b are penetrated, the light that luminescence component 210a and luminescence component 210b is sent can divide through being oriented to
Do not projected towards the first substrate 202 with the second substrate 220.
Display device 50J can also include light shield layer 222a, be configured at the side of the second substrate 220, be configured at the second substrate
On 220, and orthographic projections of the light shield layer 222a on the first substrate 202 and positive throwings of the luminescence component 210a on the first substrate 202
Shadow is overlapping.Light shield layer 222a is black matrix" or reflecting material.Accordingly, light shield layer 222a can stop what luminescence component 210a was sent
Light is projected by the second substrate 220.Similarly, display device 50J can also include light shield layer 222b, be configured at the first substrate 202
Side, it is configured at side of first substrate away from luminescence component 210b, and orthographic projections of the light shield layer 222b on the first substrate 202
It is overlapping with orthographic projections of the luminescence component 210b on the first substrate 202.Therefore, according to setting light shield layer 222a and light shield layer
222b, the problem of adjacent luminescence component 210a and luminescence component 210b can be avoided to interfere.
Referring to Figure 10 and Figure 11, Figure 10 display device 50J and Figure 11 display device 50K Main Differences exist
It is different in the light emission direction of luminescence component, but it belongs to the display device of double-side.
Specifically, display device 50K the first catoptric arrangement 216c is configured in the second substrate 220, and the first reflection
Orthographic projection of orthographic projections of the structure 216c on the first substrate 202 with luminescence component 210b on the first substrate 202 is overlapping.Specifically
For, the first catoptric arrangement 216c can be between the second substrate 220 and transparent conducting structures 214b.Display device 50K includes
Second catoptric arrangement 224a and the second catoptric arrangement 224b.Second catoptric arrangement 224a covers luminescence component 210a and only exposes hair
Optical assembly 210a towards the second substrate 220 light-emitting area 218a, and the second catoptric arrangement 224b covering luminescence component 210b and only
Expose light-emitting area 218bs of the luminescence component 210b towards the second substrate 220.In the present embodiment, luminescence component 210a with luminous group
Part 210b light emission direction is towards the second substrate 220, and the light that luminescence component 210b is sent is via the first catoptric arrangement
216c is reflected to be projected by the first substrate 202.Consequently, it is possible to display device 50k is also the display device of double-side.
In addition, light shield layer 222a is configured at the side of the first substrate 202, such as the first substrate 202 is configured at away from luminous
Component 210a side, and orthographic projections of the light shield layer 222a on the first substrate 202 and luminescence component 210a are in the first substrate 202
On orthographic projection it is overlapping, the light sent with stopping luminescence component 210a towards the first substrate 202.Light shield layer 222b is configured at
The side of two substrates 220, such as be configured on the second substrate 220, and orthographic projections of the light shield layer 222b on the first substrate 202 with
Orthographic projections of the luminescence component 210b on the first substrate 202 is overlapping, to stop that luminescence component 210b is sent out towards the second substrate 220
The light gone out.According to light shield layer 222a and light shield layer 222b setting, can avoid between luminescence component 210a and luminescence component 210b
The problem of interfering with each other.
Accordingly, a part of light that display device 50K is sent projects towards the direction of the second substrate 220, and another part
Light projects towards the direction of the first substrate 202, therefore display device 50K also can double-side.
Referring to Figure 10 and Figure 12, the display device 50L shown in Figure 12 is similar to Figure 10 display device 50J,
Belong to the display device of double-side.Figure 12 the first catoptric arrangement 216a covers luminescence component 210a and only exposes luminescence component
The light-emitting area 218a of 210a the second substrates 220 of direction, and the first catoptric arrangement 216b covers luminescence component 210b and only exposes hair
Light-emitting area 218bs of the optical assembly 210b towards the first substrate 202.Driving as shown in Figure 10 is shown so that for purpose of brevity, Figure 12 is omitted
Component T1, drive component T2, transparent conducting structures 212a and transparent conducting structures 212b.In addition, Figure 12 luminescence component
210a and luminescence component 210b shares transparent conducting structures 214c.In other words, transparent conducting structures 214c can be together with lighting
Component 210a and luminescence component 210b is electrically connected with.
The light shield layer 222a of display device 50L light shield layer is configured at the side of the first substrate 202, and example is such as disposed in first
Side of the substrate 202 away from luminescence component 210a, and orthographic projections and luminescence component of the light shield layer 222a on the first substrate 202
Orthographic projections of the 210a on the first substrate 202 is overlapping.On the other hand, the light shield layer 222b configurations of display device 50L light shield layer
In the side of the second substrate 220, be configured on the second substrate 220, and orthographic projections of the light shield layer 222b on the first substrate 202 with
Orthographic projections of the luminescence component 210b on the first substrate 202 is overlapping.
Referring to Figure 11 and Figure 13, the display device 50M shown in Figure 13 is similar to Figure 11 display device 50K.On
The position that both Main Differences are the first catoptric arrangement 216c is stated, and Figure 13 display device 50M also includes wavelength convert
Layer 226.
In the present embodiment, the second substrate 220 can be chromatic filter layer, and the second substrate 220 can be located at the first reflection and tie
Between structure 216c and luminescence component 210b.In addition, if the first catoptric arrangement 216c penetrance is at a fairly low, e.g. penetrance is low
When 5%, then light shield layer can not be additionally configured in the outside of the second substrate 220 and the first catoptric arrangement 216c.
Wavelength conversion layer 226 can be between transparent conducting structures 214c and the second substrate 220.Accordingly, can change luminous
The wave band for the light that component 210a and luminescence component 210b is sent.
In addition, Figure 13, which is omitted, shows drive component T1 as shown in figure 11, drive component T2, transparent conducting structures
212a and transparent conducting structures 212b.In addition, Figure 13 transparent conducting structures 214c can together with luminescence component 210a with
And luminescence component 210b is electrically connected with.
Referring to Figure 13 and Figure 14, the display device 50N shown in Figure 14 is similar to Figure 13 display device 50M.On
State both Main Differences and be that Figure 14 the second substrate 220 can be transparent substrates, it has transparent conducting structures, with together
It is electrically connected at luminescence component 210a and luminescence component 210b.In addition, wavelength conversion layer 226a and wavelength conversion layer 226b can
Discretely it is configured at the second substrate 220 and the first substrate 202, and orthographic projections of the wavelength conversion layer 226a on the first substrate 202
It is overlapping with orthographic projections of the luminescence component 210a on the first substrate 202, and wavelength conversion layer 226b on the first substrate 202 just
The orthographic projection projected with luminescence component 210b on the first substrate 202 is overlapping.Similarly, chromatic filter layer 228a and colorized optical filtering
Layer 228b is separably configured at the second substrate 220 and the first substrate 202, and chromatic filter layer 228a is on the first substrate 202
Orthographic projection of the orthographic projection with luminescence component 210a on the first substrate 202 it is overlapping, and chromatic filter layer 228b is in the first substrate
Orthographic projection of the orthographic projection with luminescence component 210b on the first substrate 202 on 202 is overlapping.Specifically, wavelength conversion layer
226a can be between chromatic filter layer 228a and the second substrate 220, and wavelength conversion layer 226b can be located at chromatic filter layer
Between 228b and the first substrate 202.
Referring to Figure 13 and Figure 15, Figure 15 display device 50O and Figure 13 display device 50M are similar, both
The second substrate 220 that difference essentially consists in Figure 15 is protective glass, and in this embodiment, can not configure chromatic filter layer.
Referring to Figure 15 and Figure 16, Figure 16 display device 50P and Figure 15 display device 50O are similar.Above-mentioned two
The Main Differences of person are that Figure 16 display device 50P also includes light shield layer 222b, and the first catoptric arrangement 216c is located at second
Between substrate 220 and wavelength conversion layer 226.
Referring to Figure 13 and Figure 17, Figure 17 display device 50Q and Figure 13 display device 50M are similar, and above-mentioned two
The Main Differences of person are that Figure 17 display device 50Q also includes luminescence component 210c and the second catoptric arrangement 224c, wherein
Luminescence component 210c is adjacent with luminescence component 210b, and the second catoptric arrangement 224c covers luminescence component 210c and only exposed luminous
Light-emitting area 218cs of the component 210c towards the second substrate 220.It is similar to luminescence component 210b and the second catoptric arrangement 224b, light
The light that component 210c is sent reflects through the first catoptric arrangement 216c and projected towards the direction of the first substrate 202.According to simultaneously
Luminescence component 210b and luminescence component 210c is set, display device 50Q can be improved towards the luminous effect in the direction of the first substrate 202
Rate.
Figure 18 to Figure 28 is the diagrammatic cross-section according to the display device of several embodiments of the present invention.Several implementations herein
In example, luminescence component 234a and luminescence component 234b is crystal-coated light-emitting diodes.
Figure 18 is refer to, luminescence component 234a can include electrode 228a, ray structure 230a and electrode 232a, wherein electricity
Pole 228a and electrode 232a is discretely configured on gate insulation layer GI1, and ray structure 230a is configured at electrode 228a and electrode
On 232a.Ray structure 230a can include p type semiconductor layer as shown in Figure 5, multiple quantum well construction and N-type semiconductor
Layer, it omits display herein.Similarly, luminescence component 234b can include electrode 228b, ray structure 230b and electrode 232b,
Wherein electrode 228b and electrode 232b is discretely configured on gate insulation layer GI2, and ray structure 230b is configured at electrode 228b
With on electrode 232b.Ray structure 230b can include p type semiconductor layer as shown in Figure 5, multiple quantum well construction and N-type half
Conductor layer, it omits display herein.Second catoptric arrangement 235a covers luminescence component 234a and only exposes luminescence component 234a's
Light-emitting area 237a, and the second catoptric arrangement 235b covers luminescence component 234b and only exposes luminescence component 234b light-emitting area
237b。
In addition, display device 50R can also include transparent conducting structures 236a and transparent conducting structures 238a, it is discretely matched somebody with somebody
It is placed between electrode 228a and gate insulation layer GI1 and between electrode 232a and gate insulation layer GI1, wherein transparent conducting structures
236a extends to be electrically connected with drain D 1 and electrode 228a.Similarly, display device 50R can also include transparent conducting structures 236b
With transparent conducting structures 238b, its be discretely configured between electrode 228b and gate insulation layer GI2 and electrode 232b and grid it is exhausted
Between edge layer GI2, wherein transparent conducting structures 236b extends to be electrically connected with drain D 2 and electrode 228b.Due to electrode 228a with
Electrode 232a is configured at the first substrate 202, therefore can not configure transparent conducting structures in the second substrate 220 in the present embodiment.
Similarly, because electrode 228b and electrode 232b are configured at the first substrate 202, therefore in the present embodiment can not be in the second substrate
220 configuration transparent conducting structures.
Referring to Figure 18 and Figure 19, Figure 19 display device 50S and Figure 18 display device 50R are similar.Above-mentioned two
The difference of person is that Figure 19 display device 50S can not include the second catoptric arrangement 235a and the second catoptric arrangement shown in Figure 18
235b.In addition, so that for purpose of brevity, Figure 19 omits drive component T1, drive component T2 and the electrically conducting transparent knot shown in Figure 18
Structure 236a, transparent conducting structures 238a, transparent conducting structures 236b and transparent conducting structures 238b.
Referring to Figure 19 and Figure 20, Figure 20 display device 50T and Figure 19 display device 50S are similar.Above-mentioned two
The Main Differences of person are that Figure 20 display device 50T can be (as shown in figure 19 not comprising the light shield layer for being configured at the second substrate 220
Light shield layer 222b), and the second substrate 220 can be between the first catoptric arrangement 216c and luminescence component 234b.
Referring to Figure 20 and Figure 21, Figure 21 display device 50U and Figure 20 display device 50T are similar.Above-mentioned two
The Main Differences of person are that Figure 21 display device 50U also includes the second catoptric arrangement 235a and the second catoptric arrangement 235b, and
First catoptric arrangement 216c is between the second substrate 220 and luminescence component 234b.The luminous group of second catoptric arrangement 235a coverings
Part 234a and only expose luminescence component 234a towards the second substrate 220 light-emitting area 237a, and the second catoptric arrangement 235b cover
Luminescence component 234b and only expose luminescence component 234b towards the second substrate 220 light-emitting area 237b.
Referring to Figure 19 and Figure 22, Figure 22 display device 50V and Figure 19 display device 50S are similar.Above-mentioned two
The Main Differences of person are that Figure 22 display device 50V also includes the second catoptric arrangement 235a and the first catoptric arrangement 240.Second
Catoptric arrangement 235a covers luminescence component 234a and only exposes light-emitting area 237as of the luminescence component 234a towards the second substrate 220,
And first catoptric arrangement 240 cover luminescence component 234b and only expose luminescence component 234b towards the first substrate 202 light-emitting area
237b.Therefore, in one embodiment, can optionally match somebody with somebody according to the reflectivity of the first catoptric arrangement 240 in the second substrate 220
Put light shield layer 222b.
Referring to Figure 20 and Figure 23, Figure 23 display device 50W and Figure 20 display device 50T are similar.Above-mentioned two
The Main Differences of person are Figure 23 display device 50W also comprising wavelength conversion layer 242a and wavelength conversion layer 242b.Wavelength turns
The surface that layer 242a is configured in luminescence component 234a the second substrate of direction 220 is changed, and wavelength conversion layer 242b is configured in
The surface of luminescence component 234b the second substrate of direction 220.In addition, Figure 23 the first catoptric arrangement 216c is configured at the second substrate
Between 220 and luminescence component 234b.
Referring to Figure 20 and Figure 24, Figure 24 display device 50X and Figure 20 display device 50T are similar.Above-mentioned two
The difference of person is that Figure 24 display device 50X also includes wavelength conversion layer 244, and it is configured in the second substrate 220, and wavelength
Orthographic projection of the conversion layer 244 on the first substrate 202 is with luminescence component 234a and luminescence component 234b on the first substrate 202
Orthographic projection is overlapping.Specifically, the second substrate 220 can be between the first catoptric arrangement 216c and wavelength conversion layer 244, and ripple
Long conversion layer 244 can be between the second substrate 220 and luminescence component 234b.
Referring to Figure 19 and Figure 25, Figure 25 display device 50Y and Figure 19 display device 50S are similar.Above-mentioned two
The Main Differences of person are Figure 25 display device 50Y also comprising wavelength conversion layer 246a and wavelength conversion layer 246b.Wavelength turns
Change a layer 246a and be configured at the second substrate 220, and between the second substrate 220 and luminescence component 234a, so that wavelength conversion layer
Orthographic projection of orthographic projections of the 246a on the first substrate 202 with luminescence component 234a on the first substrate 202 is overlapping.Wavelength convert
Layer 246b is configured at the first substrate 202, and the first substrate 202 is between luminescence component 234b and wavelength conversion layer 246b, with
Make orthographic projections of the wavelength conversion layer 246b on the first substrate 202 and orthographic projections of the luminescence component 234b on the first substrate 202
It is overlapping.
Referring to Figure 21 and Figure 26, Figure 26 display device 50Z and Figure 21 display device 50U are similar.Above-mentioned two
The Main Differences of person are Figure 26 display device 50Z also comprising wavelength conversion layer 248 and chromatic filter layer 250, and it is configured at
Second substrate 220.Specifically, chromatic filter layer 250 can be between substrate 220 and wavelength conversion layer 248, and it is first
Orthographic projection of the orthographic projection with luminescence component 234a and luminescence component 234b on the first substrate 202 on substrate 202 is overlapping.Separately
Outside, the second substrate 220 can be between the first catoptric arrangement 216c and chromatic filter layer 250.
Referring to Figure 25 and Figure 27, Figure 27 display device 60A and Figure 25 display device 50Y are similar.Above-mentioned two
The Main Differences of person are Figure 27 display device 60A also comprising the second catoptric arrangement 235a, the second catoptric arrangement 235b, colour
Filter layer 252a and chromatic filter layer 252b.Second catoptric arrangement 235a can cover luminescence component 234a and only expose luminous group
The light-emitting area 237a of part 234a the second substrates 220 of direction, and the second catoptric arrangement 235b can cover luminescence component 234b and only reveal
Go out light-emitting area 237bs of the luminescence component 234b towards the second substrate 220.Chromatic filter layer 252a and chromatic filter layer 252b distinguishes
It is configured at the second substrate 220 and the first substrate 202.Specifically, chromatic filter layer 252a turns positioned at the second substrate 220 with wavelength
Change between layer 246a, and chromatic filter layer 252b is between the first substrate 202 and wavelength conversion layer 246b.
Figure 26 and Figure 28 are refer to, Figure 28 display device 60B and Figure 26 display device 50Z are similar.The two
Main Differences are that Figure 28 display device 60B also includes luminescence component 234c and the second catoptric arrangement 235c, wherein luminous
Component 234c is adjacent with luminescence component 234b, and the second catoptric arrangement 235c covers luminescence component 234c and only exposes luminescence component
Light-emitting area 237cs of the 234c towards the second substrate 220.Electrode is also included similar in appearance to luminescence component 234b, luminescence component 234c
228c, ray structure 230c and electrode 232c.Luminescence component 234b and luminescence component are set simultaneously according in display device 60B
234c, luminous efficiencies of the display device 60B towards the first substrate 202 can be improved.
In summary, the light that luminescence component is sent can be reflected by the first catoptric arrangement and outwards be penetrated from the first substrate
Go out.Consequently, it is possible to the design of the present embodiment helps to simply change the light emission direction of luminescence component so that display device shows
Show that direction is relatively easy to meet different design requirements.On the other hand, by previous designs, the present embodiment can be applied to large-scale chi
In very little display device.
Although the present invention is disclosed as above with embodiment, so it is not limited to the present invention, any art
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when that can make a little change and retouching, these are changed
It all should be fallen within the scope of protection of the present invention with retouching.
Claims (14)
- A kind of 1. display device, it is characterised in that including：First substrate；Luminescence component, it is configured on first substrate, wherein the height of the luminescence component is more than or equal to 1 μm and is less than or equal to 20μm；AndFirst catoptric arrangement, the corresponding luminescence component configuration, wherein the light that the luminescence component is sent is via described first Projected after catoptric arrangement reflection by first substrate.
- 2. display device according to claim 1, it is characterised in that also including drive component, be configured at first lining On bottom, wherein the luminescence component staggers with the drive component.
- 3. display device according to claim 1, it is characterised in that wherein described luminescence component is the pole of crystal-coated light-emitting two Pipe or vertical LED.
- 4. display device according to claim 1, it is characterised in that also including wavelength conversion layer, be configured at described first The side of substrate, orthographic projection of the wavelength conversion layer on first substrate is with the luminescence component in first substrate On orthographic projection it is least partially overlapped.
- 5. display device according to claim 4, it is characterised in that wherein described wavelength conversion layer is phosphor layer, glimmering Light bisque, quantum dot layer or its combination.
- 6. display device according to claim 5, it is characterised in that wherein described first substrate has depression, and described Wavelength conversion layer is located in the depression.
- 7. display device according to claim 1, it is characterised in that also including chromatic filter layer, be configured at described first The side of substrate, orthographic projection of the chromatic filter layer on first substrate is with the luminescence component in first substrate On orthographic projection it is least partially overlapped.
- 8. display device according to claim 1, it is characterised in that also including the first insulating barrier, first insulating barrier Between first substrate and first catoptric arrangement, first insulating barrier has an opening, the luminescence component It is configured at the opening.
- 9. display device according to claim 8, it is characterised in that the side wall of wherein described opening and first substrate Angle be more than or equal to 60 ° and less than or equal to 150 °.
- 10. display device according to claim 8, it is characterised in that also including the second insulating barrier, described luminous group of covering Part and first insulating barrier.
- 11. display device according to claim 1, it is characterised in that also including one second substrate, the luminescence component position Between first substrate and second substrate, wherein first catoptric arrangement is configured at first substrate, described Second substrate covers the luminescence component and only exposes the light-emitting area of the luminescence component.
- 12. display device according to claim 11, it is characterised in that the quantity of wherein described luminescence component to be multiple, The partial luminescence component is lighted towards first substrate, and other described luminescence components are sent out towards second substrate Light.
- 13. display device according to claim 1, it is characterised in that also including light shield layer, be configured at first substrate Side, and orthographic projection of the light shield layer on first substrate and the luminescence component on first substrate just Project overlapping.
- 14. display device according to claim 1, it is characterised in that also including light shield layer, be configured at second substrate Side, and orthographic projection of the light shield layer on first substrate and the luminescence component on first substrate just Project overlapping, first catoptric arrangement is configured at second substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210182232.8A CN114551427A (en) | 2016-05-20 | 2017-01-05 | Display device |
| US15/585,175 US10269777B2 (en) | 2016-05-20 | 2017-05-03 | Display apparatus comprising reflection structure |
| US16/297,714 US20190206848A1 (en) | 2016-05-20 | 2019-03-11 | Display apparatus |
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| US201662339107P | 2016-05-20 | 2016-05-20 | |
| US62/339,107 | 2016-05-20 | ||
| US201662350169P | 2016-06-14 | 2016-06-14 | |
| US62/350,169 | 2016-06-14 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109656056A (en) * | 2019-02-28 | 2019-04-19 | 上海天马微电子有限公司 | Reflective display panel and reflection display device |
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Also Published As
| Publication number | Publication date |
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| CN111554701A (en) | 2020-08-18 |
| CN111554701B (en) | 2023-05-16 |
| CN107403819A (en) | 2017-11-28 |
| CN107403820B (en) | 2022-03-18 |
| CN107403819B (en) | 2020-06-16 |
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