CN103000823A - Methods of forming inclined structures, organic light emitting display devices and methods of manufacturing the organic light emitting display devices - Google Patents

Methods of forming inclined structures, organic light emitting display devices and methods of manufacturing the organic light emitting display devices Download PDF

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Publication number
CN103000823A
CN103000823A CN2012102237101A CN201210223710A CN103000823A CN 103000823 A CN103000823 A CN 103000823A CN 2012102237101 A CN2012102237101 A CN 2012102237101A CN 201210223710 A CN201210223710 A CN 201210223710A CN 103000823 A CN103000823 A CN 103000823A
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organic light
electrode
dielectric film
incline structure
groove
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CN2012102237101A
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CN103000823B (en
Inventor
林载翊
朴源祥
白守珉
金敏佑
金一南
金在经
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides methods of forming inclined structures, organic light emitting display devices and methods of manufacturing the organic light emitting display devices. The organic light emitting display device comprises a first substrate, an insulation layer having an inclined structure, a first electrode, a pixel defining layer defining a luminescent region and a non-luminescent region, an organic light emitting structure, a second electrode and a second substrate. Lateral portions of the first electrode, the second electrode and/or the pixel defining layer may have an inclination angle for preventing a total reflection of light generated from the organic light emitting structure, so that the organic light emitting display device may ensure a light efficiency substantially larger than that of the conventional organic light emitting display device by about at least 30 percent.

Description

Form method, organic light-emitting display device and the manufacture method thereof of incline structure
The cross reference of related application
The application requires priority and the rights and interests of the korean patent application No.10-2011-0063558 that submitted on June 29th, 2011 and the korean patent application No.10-2012-0059068 that submitted on June 1st, 2012, and these two disclosed full contents of korean patent application are incorporated the application by reference hereby into.
Technical field
Example embodiment of the present invention relates to the method that forms method, organic light-emitting display device and the manufacturing organic light-emitting display device of incline structure at insulating barrier.More particularly, example embodiment of the present invention relates to the method that the method, the organic light-emitting display device that comprises the insulating barrier with this incline structure and the manufacturing that form the incline structure with expectation inclination angle at insulating barrier comprise the organic light-emitting display device of the insulating barrier with this incline structure.
Background technology
In panel display apparatus, even if organic light emitting display (OLED) device has relatively little size, it also can have the characteristic of multiple expectation, for example high response speed, lower power consumption and wide visual angle.In addition, can make organic light-emitting display device with simply being configured under the relatively low temperature, so organic light-emitting display device can be become display unit of future generation by approval.
The tradition organic light-emitting display device can have following structure, can arranged in succession covering at structure Anodic and negative electrode on the insulating barrier of the thin-film transistor (TFT) that substrate arranges, and organic luminous layer can be arranged between anode and the negative electrode.Yet in traditional organic light-emitting display device, the light that produces from organic luminous layer may total reflection between these two electrodes, so that the optical efficiency of traditional organic light-emitting display device may significantly descend.For example, because the reflection of light between anode, organic luminous layer and negative electrode, traditional organic light-emitting display device may have about 30% light loss.Consider the light loss of light, the someone proposes a kind ofly to be included in the organic light-emitting display device that has the organic luminous layer of different-thickness in red pixel, green pixel and the blue pixel, in order to cause the constructive interference of red light, green light and blue light.Comprise that the organic light-emitting display device of optically resonant structure can have the optical efficiency of raising, yet because the gamut phenomenon that is caused by the optical resonance of light, this organic light-emitting display device may have poor side visibility.
Summary of the invention
The aspect of embodiment is for the method that forms the incline structure with expectation inclination angle at insulating barrier.
The aspect of embodiment is for organic light-emitting display device, and this organic light-emitting display device comprises having the insulating barrier that contains the incline structure of expecting the inclination angle, to improve the optical efficiency of this organic light-emitting display device.
The aspect of embodiment is for using the method manufacturing that forms the incline structure with expectation inclination angle at insulating barrier to have the method for organic light-emitting display device of the optical efficiency of raising.
According to example embodiment, the invention provides a kind of method that forms incline structure at insulating barrier.Forming in the method for incline structure at insulating barrier, can form the first groove at the first dielectric film.Can form the second dielectric film at described the first dielectric film with described first groove, and can form the second groove at described the second dielectric film.Can by described the first dielectric film and described the second dielectric film are carried out reflux technique, form described incline structure from described the first groove and described the second groove.
In example embodiment, each in described the first dielectric film and described the second dielectric film can comprise compound, metal and/or the metal oxide of organic material, silicon.For example, each in described the first dielectric film and described the second dielectric film can comprise photoresist, acryloyl group base polymer, polyimides base polymer, polyamide polymers, type siloxane polymer, the polymer that comprises photosensitive acryloyl group carboxyl, phenolic resins, alkali soluble resins, Si oxide, silicon nitride, silicon nitrogen oxide, silicon oxycarbide, silicon-carbon nitride, aluminium, magnesium, zinc, hafnium, zirconium, titanium, tantalum, aluminum oxide, titanium oxide, tantalum pentoxide, magnesium oxide, zinc oxide, hafnium oxide and Zirconium oxide etc.These can use separately or it is used in combination.
In example embodiment, each in described the first groove and described the second groove can use the mask that comprises light-blocking region and half transmitting district to form.
In example embodiment, described the first groove can have roughly the degree of depth greater than the degree of depth of described the second groove, and described the second groove can have roughly the width greater than the width of described the first groove.
In example embodiment, can form described the first groove later on additionally to sidewall and the bottom actuating surface treatment process of described the first groove.
In example embodiment, described reflux technique can be carried out under about 50% temperature in about 80% the scope of the fusing point of described the first dielectric film and described the second dielectric film.
In example embodiment, described incline structure can have the shape that roughly caves in or the shape of roughly giving prominence to.For example, the ratio between the inclination angle of the sidewall of the sidewall of the inclination angle of the sidewall of described incline structure and described the first groove and described the second groove can be in about 1.0:0.2 in the scope of about 1.0:1.8.
According to example embodiment, the invention provides a kind of organic light-emitting display device, it comprises that first substrate, insulating barrier, the first electrode, pixel limit layer, organic light-emitting structure, the second electrode and second substrate.Described insulating barrier can be arranged on the described first substrate.Described insulating barrier can comprise incline structure.Described the first electrode can be arranged on the described insulating barrier.Described pixel limits layer and can be arranged on described insulating barrier and described the first electrode.Described pixel limits layer can limit luminous zone and non-light-emitting area.Described organic light-emitting structure can be arranged on described the first electrode in the described luminous zone.Described the second electrode can be arranged in described pixel and limit on layer and the described organic light-emitting structure.Described second substrate can be arranged on described the second electrode.
In example embodiment, described pixel limits layer and can extend at described the first electrode that is arranged on the sidewall of described incline structure.
In some example embodiment, described pixel limits layer can extend at described the first electrode that is arranged on the upper surface of described incline structure, and described pixel limits the opening that layer can have described the first electrode in the described luminous zone of exposure.Described organic light-emitting structure can be embedded in the described opening of described pixel restriction layer.The sidewall of described organic light-emitting structure can have with respect to arriving about 160 ° inclination angle with about 110 ° of the direction of described first substrate almost parallel.
In example embodiment, the sidewall of described incline structure can have with respect to arriving about 70 ° inclination angle with about 20 ° of the direction of described first substrate almost parallel.Each in partly of side direction on described incline structure can have the inclination angle roughly the same with the inclination angle of the sidewall of described incline structure to described the first electrode in the side direction on described incline structure part and described the second electrode.
In example embodiment, described insulating barrier can have a plurality of projections that form at described incline structure.Described the first electrode can have a plurality of ledges that form in described a plurality of projections respectively.Described organic light-emitting structure can have a plurality of parts of being separated by described a plurality of ledges of described the first electrode.
In example embodiment, described incline structure can have roughly the shape of depression, and the sidewall of described incline structure can have the inclination angle roughly the same with the inclination angle of the sidewall of described organic light-emitting structure.
In example embodiment, described incline structure can have roughly outstanding shape, and the ratio between the inclination angle of the sidewall of the inclination angle of the sidewall of described incline structure and described organic light-emitting structure can be in, and about 1.0:0.2 arrives about 1.0:1.8 or about 1.0:1.6 arrives in the scope of about 1.0:8.0.
According to example embodiment, the invention provides a kind of method of making organic light-emitting display device.In the method for making organic light-emitting display device, can form insulating barrier at first substrate.Can form incline structure at described insulating barrier.Can form the first electrode at described insulating barrier.Can form pixel restriction layer at described insulating barrier and described the first electrode.Can limit layer by the described pixel of etching partly and form the opening that is exposed to described the first electrode that arranges on the described incline structure.Can form organic light-emitting structure at the first electrode that exposes.Can limit layer and described organic light-emitting structure formation the second electrode in described pixel.Can form second substrate at described the second electrode.
In form described insulating barrier and described incline structure according to example embodiment, can form the first dielectric film at described first substrate.Can form the first groove at described the first dielectric film.Can form the second dielectric film at described the first dielectric film with described first groove.Can form the second groove at described the second dielectric film.Can by described the first dielectric film and described the second dielectric film are carried out backflow, form described incline structure from described the first groove and described the second groove.
In form described insulating barrier and described incline structure according to example embodiment, can form the first dielectric film at described first substrate.Can form the first groove at described the first dielectric film.Described the first groove can be disconnected from each other.Can form the second dielectric film at described the first dielectric film with described first groove.Can form the second groove in the part above described the first groove of described the second dielectric film.Can by described the first dielectric film and described the second dielectric film are carried out backflow, form the described incline structure with the outstanding shape between adjacent grooves.
Can form a plurality of projections in the bottom of described incline structure.Can be formed by described a plurality of projections a plurality of ledges of described the first electrode.The described organic light-emitting structure of part can be separated by described a plurality of ledges of described the first electrode.
According to example embodiment, described incline structure with described outstanding shape or described concave shape can provide side direction part that the side direction part of described the first electrode, described pixel limit layer and the side direction part of described the second electrode, and these side direction partly have the inclination angle for the expectation of all reflective light that prevents from producing from described organic light-emitting structure.Therefore, the described organic light-emitting display device that comprises described incline structure can have than the optical efficiency of traditional organic light-emitting display device high about optical efficiency more than 30% roughly.In addition, described organic light-emitting display device is without any need for the additional structure that is used for the optical resonance of the light that produces from described organic light-emitting structure, so that described organic light-emitting display device can have the structure of simplification, show image with brightness, the contrast of increase and the visual angle of expansion etc. of improving simultaneously.
Description of drawings
From make by reference to the accompanying drawings the following describes can understand in more detail example embodiment, in the accompanying drawings:
Fig. 1 forms the profile of the method for incline structure to what Fig. 4 was diagram according to example embodiment at insulating barrier;
Fig. 5 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of example embodiment to Figure 11;
Figure 12 and Figure 13 are that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment;
Figure 14 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment to Figure 19;
Figure 20 and Figure 21 are that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment; And
Figure 22 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment to Figure 24.
Embodiment
Example embodiment is more fully described with reference to the accompanying drawings.Yet design of the present invention can be with multiple multi-form embodiment, and should not think the example embodiment that is confined to set forth among the present invention.In the accompanying drawings, for clear possibility amplification layer and regional size and relative size.
To understand, when element or layer are called " on another element or layer ", " being connected with another element or layer " or " with another element or layer connect ", it can be directly directly be connected on another element or layer, with another element or layer or with another element or layer directly connect, perhaps can exist be positioned at middle element or layer.By contrast, when element was called " directly on another element or layer ", " directly being connected with another element or layer " or " directly connecting with another element or layer ", the element in the middle of not being positioned at or layer existed.In the present invention in full, same or similar Reference numeral represents same or similar element.The term that uses among the present invention " and/or " comprise associated one or more any combinations and all combinations of listing in the project.
To understand, although the term first, second, third, etc. can be used for describing a plurality of elements, assembly, zone, layer, pattern and/or part in the present invention, these elements, assembly, zone, layer, pattern and/or part are not limited by these terms should.These terms only are used for an element, assembly, zone, layer, pattern or part and other zone, layer, pattern or part are distinguished.Therefore, the first element that the below introduces, the first assembly, first area, ground floor or first can be called the second element, the second assembly, second area, the second layer or second portion, and do not deviate from the instruction of example embodiment.
In the present invention, for convenience of description, can use the term relevant with the space (for example " and ... under ", " in ... below ", " lower ", " in ... top ", " higher " etc.) relation of an illustrated element in the accompanying drawing or feature and other element or feature described.To understand, the term relevant with the space is intended to comprise device different directions except the direction shown in the accompanying drawing when using or work.For example,, being described to so the element of " below other element or feature " or " under other element or feature " if the device in the accompanying drawing is reversed can be towards " other element or feature top ".Therefore, exemplary term " in ... below " can comprise " in ... top " and " in ... below " both direction.Device can towards other direction (90-degree rotation or towards other direction), correspondingly be explained the descriptor relevant with the space that uses among the present invention.
The term that uses among the present invention only is as the concrete example embodiment purposes of description, rather than is intended to limit design of the present invention.The singulative that uses among the present invention " one ", " one " and " being somebody's turn to do " also are intended to comprise plural form, point out unless context is known in addition.Also will understand, term " comprises " and/or " comprising " when using in this manual, its appointment exists institute's narrating characteristic, integral body, step, operation, element and/or assembly, but does not get rid of the group that exists or increase one or more further features, integral body, step, operation, element, assembly or be comprised of them.
Among the present invention, describe example embodiment with reference to cross-section illustration, these cross-section illustration are illustrating the Utopian example embodiment of diagrammatic of the present invention's design (and intermediate structure).Therefore, the variation of the shape shown that is caused by for example manufacturing technology and/or manufacturing tolerance will be predicted.Thereby example embodiment should not thought the special shape that is confined to illustrated zone among the present invention, but should comprise by for example making the form variations that causes.Illustrated zone is actually schematically in the accompanying drawing, and the true form and not being intended to that their shape is not intended to the zone of graphic display unit limits the scope of the present invention's design.
Unless otherwise defined, otherwise all terms that use among the present invention (comprising technical term and scientific terminology) have and the field that belonged to by the present invention design in the identical meaning of the meaning usually understood of those of ordinary skill.Also will understand, those terms that for example define in normally used dictionary should be interpreted as having the meaning consistent with they meanings under the background of association area and not from understandings of getting on of idealized or too formal meaning, unless clearly among the present invention define like this.
Fig. 1 forms the profile of the method for incline structure to what Fig. 4 was diagram according to example embodiment at insulating barrier.
With reference to figure 1, can form the first dielectric film 5 at the object (not shown).Object can comprise substrate, insulating barrier, conductive layer etc.In addition, object can comprise the understructure with switch element, contact, pad, plug, electrode, conductive pattern, insulating pattern etc.The thickness that the first dielectric film 5 can have enough covering understructures.
In some example embodiment, can carry out flatening process to the object with first dielectric film 5, to improve the flatness of the first dielectric film 5.For example, can carry out chemico-mechanical polishing (CMP) technique and/or etch-back technics to the first dielectric film 5, so that the first dielectric film 5 can have generally flat surface.
In example embodiment, the first dielectric film 5 can comprise organic material.The formation such as for example, the first dielectric film 5 can make with photoresist, acryloyl group base polymer, polyimides base polymer, polyamide polymers, type siloxane polymer, the polymer that comprises photosensitive acryloyl group carboxyl, phenolic resins, alkali soluble resins.These can use separately or it is used in combination.In some example embodiment, the first dielectric film 5 can use inorganic material, formation such as silicon compound, metal, metal oxide.For example, the first dielectric film 5 can comprise Si oxide (SiOx), silicon nitride (SiNx), silicon nitrogen oxide (SiOxNy), silicon oxycarbide (SiOxCy), silicon-carbon nitride (SiCxNy), aluminium (Al), magnesium (Mg), zinc (Zn), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum (Ta), aluminum oxide (AlOx), titanium oxide (TiOx), magnesium oxide (MgOx), zinc oxide (ZnOx), hafnium oxide (HfOx), tantalum pentoxide (TaOx), Zirconium oxide (ZrOx) etc.These can use separately or it is used in combination.The first dielectric film 5 can pass through the formation such as spin coating process, typography, sputtering technology, chemical vapor deposition (CVD) technique, ald (ALD) technique, plasma enhanced chemical vapor deposition (PECVD) technique, high density plasma CVD (HDP-CVD) technique, vacuum evaporation process.Can select to be used to form according to the material that comprises in the first dielectric film 5 technique of the first dielectric film 5.
Still with reference to figure 1, can above the first dielectric film 5, place the first mask (not shown).The first mask can comprise light-blocking region and half transmitting district.Can use the first mask that the first dielectric film 5 is carried out the first exposure technology.For example, in the first exposure technology, the first dielectric film 5 can be exposed to ultraviolet ray or laser.Alternatively, can use additional etching mask that the first dielectric film 5 is carried out the first etch process.The first exposure technology and the first etch process can be carried out according to the material selectivity ground that comprises in the first dielectric film 5.In example embodiment, the first mask can comprise intermediate tone mask, halftoning slit mask (halftone slit mask) etc.In addition, the first mask can comprise the transmission area that is close to light-blocking region and/or half transmitting district.
When the first dielectric film 5 experience the first exposure technology, can carry out the first developing process or the first etch process to the first dielectric film 5, partly to remove the first dielectric film 5 through exposure.Thus, can form the first groove 10 at the first dielectric film 5.In example embodiment, the first groove 10 can have the first relatively large degree of depth of measurement from the upper surface of the first dielectric film 5.In addition, the first groove 10 can have the first relatively little width.The sidewall of the first groove 10 can have with respect to the relative first large inclination angle of direction of object (perhaps for example with the upper surface of the first dielectric film 5) almost parallel.For example, this first inclination angle of the sidewall of the first groove 10 can be in about the axis with the upper surface almost parallel of object about 40 ° in about 90 ° scope.
With reference to figure 2, can have in the above and form the second dielectric film 15 on the first dielectric film 5 of the first groove 10.The second dielectric film 15 can use organic material or inorganic material to form.For example, the second dielectric film 15 can comprise nitrogen oxide, silicon oxycarbide, silicon-carbon nitride, aluminium, magnesium, zinc, hafnium, zirconium, titanium, tantalum, aluminum oxide, titanium oxide, magnesium oxide, zinc oxide, hafnium oxide, tantalum pentoxide, Zirconium oxide of acryloyl group base polymer, polyimides base polymer, polyamide polymers, type siloxane polymer, the polymer that comprises photosensitive acryloyl group carboxyl, phenolic resins, alkali soluble resins, Si oxide, silicon nitride, silicon etc.These can use separately or it is used in combination.The second dielectric film 15 can pass through the formation such as spin coating process, typography, sputtering technology, chemical vapor deposition method, atom layer deposition process, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique, vacuum evaporation process.Can select to be used to form according to the material that in the second dielectric film 15, comprises equally the technique of the second dielectric film 15.In example embodiment, the second dielectric film 15 can comprise or roughly similarly material roughly the same with the material of the first dielectric film 5.Alternatively, the first dielectric film 5 and the second dielectric film 15 can use respectively different materials to form.
In example embodiment, the second dielectric film 15 can be arranged on the first dielectric film 5, and does not fill the first groove 10.That is to say that the first groove 10 can be between the first dielectric film 5 and the second dielectric film 15, because the first groove 10 can not filled by the second dielectric film 15.In order to realize this structure that comprises the first dielectric film 5 and the second dielectric film 15, can be to the first groove 10 actuating surface treatment process.For example, can be to bottom and the sidewall selectivity ground actuating surface treatment process of the first groove 10.Process of surface treatment can comprise plasma-treating technology, hydrophobicity treatment process etc.
With reference to figure 3, can after the second mask (not shown) being placed on the second dielectric film 15, carry out the second exposure technology to the second dielectric film 15.The second mask can comprise light-blocking region and half transmitting district.Can use equally ultraviolet ray or laser to carry out the second exposure technology.The second mask can comprise intermediate tone mask or halftoning slit mask equally.In addition, the second mask can comprise the transmission area that is close to light-blocking region and/or half transmitting district.
Can carry out the second developing process or the second etch process to the second dielectric film 15 through exposure, so that can form the second groove 20 at the second dielectric film 15.Can carry out the second developing process and the second etch process to the second dielectric film 15 according to the material selectivity ground that comprises in the second dielectric film 15.
In example embodiment, the second groove 20 can communicate with the first groove 10.The second groove 20 can have the second relatively large width and the relative second little degree of depth.That is to say, the second width of the second groove 20 can be roughly greater than the first width of the second groove 10, and second degree of depth of the second groove 20 can be roughly less than first degree of depth of the first groove 10.In addition, the second groove 20 can comprise the sidewall that has with respect to relative large the second inclination angle with the axis of object almost parallel.For example, the second inclination angle of the sidewall of the second groove 20 can about with the upper surface of object (perhaps for example with the upper surface of the second dielectric film 15) almost parallel direction be in about 40 ° in about 90 ° scope.That is to say.The second inclination angle of the second groove 20 can be roughly the same or roughly approximate with the first inclination angle of the first groove 10.When the first groove 10 and the second groove 20 when the first dielectric film 5 and the second dielectric film 15 form, between the first dielectric film 5 and the second dielectric film 15, step shape part may be set.
With reference to figure 4, can carry out reflux technique to the first dielectric film 5 and the second dielectric film 15, from the first groove 10 and the second groove 20, to form incline structure 25.In example embodiment, reflux technique can be carried out under about 80% temperature at about 50% of the fusing point (Tm) of the first dielectric film 5 and the second dielectric film 15.For example, according to the composition that comprises in the first dielectric film 5 and the second dielectric film 15, by under about 300 ℃ temperature, carrying out reflux technique about 30 minutes to about 2 hours at about 100 ℃, can obtain incline structure 25.Consider the composition in the first dielectric film 5 and the second dielectric film 15, by adjusting process time and technological temperature, incline structure 25 can comprise the sidewall with expectation inclination angle.
In the reflux technique according to example embodiment, the first dielectric film 5 and the second dielectric film 15 can merge integratedly, so that the insulating barrier 30 with incline structure 25 to be provided.That is to say that the first groove 10 and the second groove 20 can become incline structure 25 in reflux technique, so that can form the insulating barrier 30 that comprises incline structure 25 at object.
Incline structure 25 can have the 3rd relatively large degree of depth, and the sidewall of incline structure 25 can have the 3rd relatively little tiltangleθ 1.In other words, the 3rd degree of depth of incline structure 25 can be roughly greater than first degree of depth of the first groove 10.For example, the 3rd degree of depth of incline structure 25 can be roughly the same or roughly approximate with the second degree of depth sum of first degree of depth of the first groove 10 and the second groove 20.In addition, the 3rd tiltangleθ 1 of incline structure 25 can be roughly less than the first inclination angle of the first groove 10 or the second inclination angle of the second groove 20.
When incline structure 25 comprised the sidewall with the 3rd tiltangleθ 1, incline structure 25 can have the upper width that roughly descends width greater than it.For example, the 3rd tiltangleθ 1 of incline structure 25 can be in respect to the direction with upper surface (perhaps with for example upper surface of the second dielectric film 15 and the first dielectric film 5) almost parallel of object about 20 ° in about 70 ° scope.Therefore, the ratio between the 3rd tiltangleθ 1 of the first inclination angle of the first groove 10 and incline structure 25 can be in about 1.0:0.2 in the scope of about 1.0:1.8.In addition, the ratio between the 3rd tiltangleθ 1 of the second inclination angle of the second groove 20 and incline structure 25 also can be in about 1.0:0.2 in the scope of about 1.0:1.8.The 3rd tiltangleθ 1 of incline structure 25 can change such as process time, technological temperature etc. according to the process conditions of reflux technique.That is to say, can adjust the process conditions of reflux technique, comprise the incline structure 25 with sidewall of expecting the 3rd tiltangleθ 1 so that the structure (for example light emission direction) with regard to organic light-emitting display device to be provided.
When light may incide on the insulating barrier 30 with incline structure 25, incident light can reflect at the sidewall of incline structure 25.In the case, by be included in the incline structure 25 light that a plurality of layers ray structure (not shown) placing produces not can a plurality of layers of ray structure and/or on total reflection between reflector or the lower reflector.That is to say that the incline structure 25 with the 3rd tiltangleθ 1 can prevent all reflective light that produced by ray structure.Therefore, because the incline structure 25(ray structure with the 3rd tiltangleθ 1 is positioned at here) reason, can improve the efficient of the light that is produced by organic light-emitting structure.
As indicated above, insulating barrier 30 can have the incline structure 25 with concave shape.In some example embodiment, can form the incline structure with outstanding shape at insulating barrier 30.In other words, can by with the technique of describing referring to figs. 1 through Fig. 4 roughly similarly technique obtain incline structure with outstanding shape.When two or more incline structures with concave shape to set or default when being formed on the insulating barrier 30 apart from the interval, the incline structure with outstanding shape can be set between the incline structure of adjacent depression.Therefore insulating barrier 30 can have outstanding incline structure and the incline structure of depression, perhaps can only have outstanding incline structure by the incline structure of removing depression.According to some example embodiment, can form the first dielectric film 5 at object, then can be to set or default distance formation the first groove on the first dielectric film 5.The second dielectric film 15 can be on the first dielectric film 5 form by the mode that the first groove is clipped in the middle of the two, then can form the second groove in the part of covering first groove of the second dielectric film 15.When the first dielectric film 5 and the second dielectric film 15 are refluxed, the incline structure with outstanding shape is set between the adjacent grooves that can provide in the combination by the first groove and the second groove.Here, the sidewall of outstanding incline structure can have or roughly approximate inclination angle roughly the same with the inclination angle of the sidewall of the incline structure of depression.In other words, adjacent outstanding incline structure and depression incline structure can have a common sidewall.
Fig. 5 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of example embodiment to Figure 11.
With reference to figure 5, can the first resilient coating 55 be set at first substrate 50.First substrate 50 can comprise transparent insulation substrate.For example, first substrate 50 can comprise glass substrate, quartz base plate, transparent resin substrate etc.The example that is used for the transparent resin substrate of first substrate 50 can comprise polyimide resin, acrylic resin, polyacrylate resin, polycarbonate resin, polyether resin, pet resin, sulfonate resin etc.
In some example embodiment, can before forming resilient coating 55 at first substrate 50, carry out flatening process to first substrate 50.For example, can carry out chemico-mechanical polishing (CMP) technique and/or etch-back technics to first substrate 50, so that first substrate 50 can have generally flat surface.In some example embodiment, grade according to the one-tenth that comprises in the flatness of first substrate 50, the first substrate 50, can not form resilient coatings 55 at first substrate 50.
Resilient coating 55 can prevent from spreading in the technique that continues from the metallic atom of first substrate 50, metal ion and/or impurity.Resilient coating 55 can also be controlled the heat transfer rate in the crystallization processes of continuation of semiconductor pattern 60, so that semiconductor pattern 60 can be formed uniformly on resilient coating 55.In addition, resilient coating 55 can have the flatness that irregular when surface roughly improve first substrate 50 at first substrate 50.Resilient coating 55 can use the compound of silicon to form.For example, resilient coating 55 can comprise Si oxide (SiOx), silicon nitride (SiNx), silicon nitrogen oxide (SiOxNy), silicon oxycarbide (SiOxCy), silicon-carbon nitride (SiCxNy) etc.These can use separately or it is used in combination.In some example embodiment, resilient coating 55 can have single layer structure or sandwich construction.For example, resilient coating 55 can comprise silicon oxide film, silicon nitride film, silicon oxynitride film, silicon oxycarbide film and/or silicon-carbon nitride film.
Semiconductor pattern 60 can be formed on the resilient coating 55.In example embodiment, can form the semiconductor layer (not shown) at resilient coating 55, then can to the semiconductor layer patterning, form preliminary semiconductor pattern (not shown) with the part at resilient coating 55.Preliminary semiconductor pattern can by crystallization, provide semiconductor pattern 60 with this part at resilient coating 55.Semiconductor layer can pass through the formation such as chemical vapor deposition method, plasma enhanced chemical vapor deposition technique, low-pressure chemical vapor deposition process, sputtering technology.When semiconductor layer comprised amorphous silicon, semiconductor pattern 60 can comprise polysilicon.Here, the crystallization processes that is used to form semiconductor pattern 60 can comprise thermal process of Ear Mucosa Treated by He Ne Laser Irradiation technique, Technology for Heating Processing, use catalyst etc.
In some example embodiment, can carry out dehydrogenating technology to semiconductor layer and/or preliminary semiconductor pattern later at formation semiconductor layer and/or preliminary semiconductor pattern.Dehydrogenating technology can reduce the hydrogen content in semiconductor layer and/or the preliminary semiconductor pattern, so that semiconductor pattern 60 can guarantee the electrical characteristics that strengthen.
With reference to figure 6, can form gate insulation layer 65 at resilient coating 55, to cover semiconductor pattern 60.Gate insulation layer 65 can pass through the acquisitions such as chemical vapor deposition method, spin coating process, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique, typography.Gate insulation layer 65 can comprise Si oxide, metal oxide etc.The example that is used for the metal oxide of gate insulation layer 65 can comprise hafnium oxide (HfOx), aluminum oxide (AlOx), Zirconium oxide (ZrOx), titanium oxide (TiOx), tantalum pentoxide (TaOx) etc.These can use separately or it is used in combination.
Gate insulation layer 65 can roughly be formed uniformly on resilient coating 55 along the profile of semiconductor pattern 60.Gate insulation layer 65 can have relatively little thickness, and gate insulation layer 65 may have the step shape part that is close to semiconductor pattern 60.In some example embodiment, when gate insulation layer 65 covered semiconductor pattern 60 fully, gate insulation layer 65 can have generally flat surface.In the case, gate insulation layer 65 can have relatively large thickness.
Can form gate electrode 70 at gate insulation layer 65.The underneath that gate electrode 70 can be arranged in gate insulation layer 65 is equipped with on the part of semiconductor pattern 60.In example embodiment, can form the first conductive layer (not shown) at gate insulation layer 65, can use additional etching mask by photoetching process or etch process with the first conductive layer pattern.Therefore, can gate electrode 70 be set at gate insulation layer 65.The first conductive layer can use the formation such as sputtering technology, chemical vapor deposition method, pulse laser deposition process, vacuum evaporation process, atom layer deposition process, typography.
Gate electrode 70 can comprise metal oxide, transparent conductive material of metal, alloy, metal nitride, conduction etc.For example, gate electrode 70 can use aluminium (Al), the alloy that contains aluminium, aln precipitation (AlNx), silver (Ag), the alloy of argentiferous, tungsten (W), tungsten nitride (WNx), copper (Cu), the alloy of cupric, nickel (Ni), chromium (Cr), chromium nitride (CrNx), molybdenum (Mo), the alloy that contains molybdenum, titanium (Ti), titanium nitride (TiNx), platinum (Pt), tantalum (Ta), zinc oxide (ZnOx), indium tin oxide (ITO), tin-oxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), the formation such as indium-zinc oxide (IZO).These can use separately or it is used in combination.In example embodiment, gate electrode 70 can have the metal oxide that comprises metal above-mentioned, alloy, metal nitride, conduction or the single layer structure of transparent conductive material.In some example embodiment, gate electrode 70 can have the metal oxide that comprises metal above-mentioned, alloy, metal nitride, conduction and/or the sandwich construction of transparent conductive material.
Although not shown among Fig. 6, when forming gate electrode 70, can form gate line in the part of gate insulation layer 65.Gate electrode 70 can electrically contact with gate line, and gate line can extend at gate insulation layer 65 along first direction.
By using gate electrode 70 as injecting mask, impurity can inject in the semiconductor pattern 60, so that can form source region 75 and drain region 80 in semiconductor pattern 60.By the ion implantation energy of control ion implantation technology, the impurity that passes gate electrode 70 can inject in the side direction part of semiconductor pattern 60.Here, the middle body below gate electrode 70 of semiconductor pattern 60 does not have the impurity of injection, so that this middle body of semiconductor pattern 60 can be taken on the channel region 85 between source region 75 and the drain region 80.In other words, can limit channel region 85 according to the formation in source region 75 and drain region 80.In some example embodiment, can the mask (not shown) be set in the part with gate electrode 70 vicinities of gate insulation layer 65, then can use this mask and gate electrode 70 side by side to form source region 75 and drain region 80 as injecting mask.
In example embodiment, gate electrode 70 can have roughly the width less than the width of semiconductor pattern 60.For example, gate electrode 70 can have the width roughly the same or that roughly be similar to the width of channel region 85.Yet according to the required electrical characteristics of switching device, the size of the size of gate electrode 70 and channel region 85 can change.
With reference to figure 7, can form insulating interlayer (interlayer) 90 at gate insulation layer 65, with covering grid electrode 70.Insulating interlayer 90 can roughly be formed uniformly on gate insulation layer 65 along the profile of gate electrode 70.Therefore, insulating interlayer 90 may have the step shape part that is close to gate electrode 70.Insulating interlayer 90 can comprise the compound of silicon.For example, insulating interlayer 90 can use the formation such as Si oxide, silicon nitride, silicon nitrogen oxide, silicon oxycarbide, silicon-carbon nitride.These can use separately or it is mixed use.Insulating interlayer 90 can have single layer structure or the sandwich construction that comprises silicon oxide film, silicon nitride film, silicon oxynitride film, silicon oxycarbide film and/or silicon-carbon nitride film.Here, insulating interlayer 90 can pass through the acquisitions such as spin coating process, chemical vapor deposition method, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique.Insulating interlayer 90 can make gate electrode 70 and the source electrode 95 and drain electrode 100 electric insulations that continue to form.
Source electrode 95 and drain electrode 100 can be formed on the insulating interlayer 90.Can be by gate electrode 70 be arranged source electrode 95 and drain electrode 100 with what set or preset apart from the interval as the center.Source electrode 95 and drain electrode 100 each can be adjacent with gate electrode 70.For example, source electrode 95 and drain electrode 100 can extend to from the part above source region 75 and drain region 80 of insulating interlayer 90 respectively insulating interlayer 90 on the part above the gate electrode 70.In addition, source electrode 95 and drain electrode 100 can pass respectively insulating interlayer 90 and electrically contact with source region 75 and drain region 80.
In example embodiment, can be to partly etching of insulating interlayer 90, to form the hole (not shown) that exposes respectively source region 75 and drain region 80.Can form the second conductive layer (not shown) at insulating interlayer 90, to fill up these holes.By with the second conductive layer pattern, can be in the source region 75 and drain region 80 form source electrode 95 and drain electrodes 100, as shown in Figure 7.The second conductive layer can pass through the formation such as sputtering technology, chemical vapor deposition method, pulse laser deposition process, vacuum evaporation process, atom layer deposition process, typography.Each can comprise metal oxide, transparent conductive material of metal, alloy, metal nitride, conduction etc. source electrode 95 and drain electrode 100.For example, source electrode 95 and drain electrode 100 each can use aluminium, contain the formation such as alloy, nickel, chromium, chromium nitride, molybdenum, the alloy that contains molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium (Nd), scandium (Sc), strontium ruthenium oxide, zinc oxide, indium tin oxide, tin-oxide, indium oxide, gallium oxide, indium-zinc oxide of alloy, tungsten, tungsten nitride, copper, the cupric of alloy, aln precipitation, silver, the argentiferous of aluminium.These can use separately or it is used in combination.In addition, source electrode 95 and drain electrode 100 each can have single layer structure or the sandwich construction that can comprise metal film, alloy film, metal nitride films, conducting metal oxide and/or transparent conductive material film.
Although not shown, when forming source electrode 95 and drain electrode 100, can form the data wire that extends along second direction at insulating interlayer 90.Here, the first direction approximate vertical that can extend with gate line of second direction.Source electrode 95 can be electrically connected on the data wire.
When insulating interlayer 90 forms source electrode 95 and drain electrode 100, the switching device of organic light-emitting display device can be set at first substrate 50.Switching device can be the thin-film transistor that comprises semiconductor pattern 60, gate insulation layer 65, gate electrode 70, source electrode 95 and drain electrode 100.
With reference to figure 8, can form the first protective layer 105 at insulating interlayer 90, to cover source electrode 95 and drain electrode 100.The first protective layer 105 can have the enough thickness that covers source electrode 95 and drain electrode 100 fully.The first protective layer 105 can comprise organic material or inorganic material.The formation such as for example, the first protective layer 105 can make with photoresist, acryloyl group base polymer, polyimides base polymer, polyamide polymers, type siloxane polymer, the polymer that comprises photosensitive acryloyl group carboxyl, phenolic resins, alkali soluble resins, Si oxide, silicon nitride, silicon nitrogen oxide, silicon oxycarbide, silicon-carbon nitride, aluminium, magnesium, zinc, hafnium, zirconium, titanium, tantalum, aluminum oxide, titanium oxide, tantalum pentoxide, magnesium oxide, zinc oxide, hafnium oxide, Zirconium oxide.These can use separately or it is used in combination.According to the composition in the first protective layer 105, the first protective layer 105 can pass through the acquisitions such as spin coating process, typography, sputtering technology, chemical vapor deposition method, atom layer deposition process, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique, vacuum evaporation process.In some example embodiment, according to composition and/or the size of the insulating barrier 110 that continues to form, can not form the first protective layer 105 of overlay switch device.
With reference to figure 8 and Fig. 9, can form the insulating barrier 110 with incline structure 120 at the first protective layer 105.Insulating barrier 110 can have single layer structure, perhaps can have to comprise two with the sandwich construction of upper nonconductive Film.In example embodiment, insulating barrier 110 can be included in the first dielectric film and the second dielectric film that in succession forms on the first protective layer 105.The technique that is used to form the insulating barrier 110 with the first dielectric film and second dielectric film can be roughly the same or roughly similar with the technique that is used to form the first dielectric film 5 and the second dielectric film 15 of the description that sees figures.1.and.2.In addition, the first dielectric film of insulating barrier 110 and the second dielectric film can comprise respectively or roughly similarly material roughly the same with the material of the first dielectric film 5 and the second dielectric film 15.
As shown in Fig. 8 and Fig. 9, can the incline structure 120 with the 4th tiltangleθ 2 be set at insulating barrier 110.That is to say that the sidewall of incline structure 120 can have the 4th tiltangleθ 2.In addition, can pass insulating barrier 110 and the first protective layer 105 formation holes 115, partly to expose drain electrode 100.In example embodiment, hole 115 can form when insulating barrier 110 forms incline structure 120.In some example embodiment, can after forming incline structure 120 at insulating barrier 110, pass the hole 115 that insulating barrier 110 and the first protective layer 105 form a part that exposes drain electrode 100.
The incline structure 120 of insulating barrier 110 can be by or roughly similarly technique formation roughly the same with the technique of the incline structure that is used to form insulating barrier 30 25 of describing referring to figs. 1 through Fig. 4.In addition, the 4th tiltangleθ 2 of the sidewall of incline structure 120 can be roughly the same or roughly similar with the 3rd tiltangleθ 1 of the sidewall of above-described incline structure 25.For example, the 4th tiltangleθ 2 of the sidewall of incline structure 120 can be in respect to the direction with first substrate 50 almost parallels about 20 ° in about 70 ° of scopes.
As shown in Figure 9, can the incline structure 120 with concave shape be set at insulating barrier 110.When incline structure 120 has this concave shape, comprise that the organic light-emitting display device of insulating barrier 110 can have top emission structure (or top-emission direction).In other words, if insulating barrier 110 comprises the incline structure 120 of depression, organic light-emitting display device can have top emission structure so.
Can form at the insulating barrier 110 with incline structure 120 the first electrode 125 of filler opening 115.The first electrode 125 can contact with drain electrode 100, and can extend in sidewall and the bottom of incline structure 120.Therefore, the first electrode 125 is placed on side direction part in the incline structure 120 and can has or roughly similarly inclination angle roughly the same with the 4th tiltangleθ 2 of incline structure 120.For example, the side direction part of the first electrode 125 in incline structure 120 can have with respect to first substrate 50(or for example with the upper surface of first substrate 50) axis of almost parallel is in about 20 ° of inclinations angle in about 70 ° of scopes.
When organic light-emitting display device had top emission structure, the first electrode 125 can comprise reflecting material.For example, the first electrode 125 can use aluminium, silver, gold (Au), chromium, tungsten, molybdenum, titanium, palladium (Pa), iridium (Ir), their formation such as alloy.These can use separately or it is used in combination.In addition, the first electrode 125 can have single layer structure or the sandwich construction that comprises metal above-mentioned and/or alloy.
In example embodiment, can form the first electrode layer (not shown) at insulating barrier 110, to fill up the hole 115 that exposes drain electrode 100, then can be with the first electrode layer patterning, at the insulating barrier 110 with incline structure 120 the first electrode 125 to be set.Here, according to the composition in the first electrode 125, the first electrode layer can pass through the formation such as sputtering technology, vacuum evaporation process, chemical vapor deposition method, pulse laser deposition process, typography, atom layer deposition process.Describe as following, the first electrode 125 can extend to from the luminous zone of organic light-emitting display device on the part of non-light-emitting area of this organic light-emitting display device.
In some example embodiment; the first electrode 125 of exposure that can be in passing the hole 115 that the first protective layer 105 and insulating barrier 110 form forms contact structures (not shown) or pad structure (not shown), then can form at insulating barrier 110 the first electrode 125 of these contact structures of contact or this pad structure.In the case, the first electrode 125 can be electrically connected on the drain electrode 100 by these contact structures or this pad structure.
Refer now to Figure 10, can form pixel restriction layer 130 at insulating barrier 110 and the first electrode 125.Pixel limits layer 130 and can use organic material or inorganic material to form.For example, pixel limits that layer 130 can make with photoresist, the compound of polypropylene-based resin, polyimide based resin, acryloyl group resinoid, silicon etc.These can use separately or it is used in combination.
Can limit layer 130 partly etching to pixel, with the opening on the part that is formed on the first electrode 125.For example, the opening of pixel restriction layer 130 can use additional etching mask to form by photoetching process or etch process.In example embodiment, the sidewall that pixel limits the opening of layer 130 can have or roughly similarly inclination angle roughly the same with the 4th tiltangleθ 2 of incline structure 120.For example, the pixel sidewall that limits the opening of layer 130 can have about the direction with first substrate 50 almost parallels and is in about 20 ° of inclinations angle in about 70 ° of scopes.
When pixel restriction layer 130 arranges opening, can limit luminous zone and the non-light-emitting area of organic light-emitting display device.That is to say that comprising that pixel limits the zone of the opening of layer 130 can be corresponding to the luminous zone, can be corresponding to non-light-emitting area and limit the adjacent zone of the opening of layer 130 with pixel.The incline structure 120 of insulating barrier 110 can be placed in the luminous zone.In the luminous zone, the first electrode 125 can roughly be formed uniformly on the bottom and sidewall of incline structure 120.Pixel limits layer 130 and can extend on the part of luminous zone, so that pixel limits on the part of bottom that layer 130 can be positioned at the sidewall of incline structure 120 and incline structure 120.In other words, pixel limits layer 130 and can cover the side direction part of the first electrode 125 in the luminous zone.Therefore, pixel limits the part (be the sidewall of opening) of layer 130 in the luminous zone and can have or roughly similarly inclination angle roughly the same with the 4th tiltangleθ 2 of incline structure 120.For example, the pixel in the luminous zone limits layer 130 and can have with respect to the axis with first substrate 50 almost parallels and be in about 20 ° of inclinations angle in about 70 ° of scopes.
Can the pixel in the luminous zone limit layer the 130 and first electrode 125 formation organic light-emitting structure 135.In example embodiment, organic light-emitting structure 135 can have the sandwich construction that comprises organic luminous layer (EL), hole injection layer (HIL), hole transmission layer (HTL), electron transfer layer (ETL), electron injecting layer (EIL) etc.According to the pixel of organic light-emitting display device, organic light-emitting structure 135 can comprise the several luminescent substances of the light (such as red light, green light, blue light etc.) for generation of multiple color.In some example embodiment, organic light-emitting structure 135 can have sandwich construction, and this sandwich construction comprises the stacking luminescent material film for generation of the white light that has mixed red light, green light and blue light.In other example embodiment, organic light-emitting structure 135 can additionally comprise the host material that has roughly greater than the band gap of the band gap of luminescent material.
In example embodiment, organic light-emitting structure 135 can be arranged on the incline structure 120 in the luminous zone.In addition, organic light-emitting structure 135 can with the luminous zone in the first electrode 125 and pixel limit layer 130 and contact.In other words, the bottom of organic light-emitting structure 135 can be placed on the first electrode 125, and the side direction of organic light-emitting structure 135 part can limit layer 130 with pixel and contact.Therefore, the side direction of organic light-emitting structure 135 part can have or roughly similarly inclination angle roughly the same with the 4th tiltangleθ 2 of the sidewall of incline structure 120.For example, the side direction of organic light-emitting structure 135 part can have about arriving about 70 ° inclination angle with about 20 ° of the axis of first substrate 50 almost parallels.
Can limit layer 130 formation the second electrode 140 in organic light-emitting structure 135 and pixel.The second electrode 140 can be formed uniformly in pixel and limit on layer 130 and the organic light-emitting structure 135.When organic light-emitting display device had top emission structure, the second electrode 140 can comprise transparent conductive material.For example, the second electrode 140 can use the formation such as indium tin oxide, indium-zinc oxide, zinc oxide, tin-oxide, gallium oxide.These can use separately or it is mixed use.
In example embodiment, the second electrode 140 can extend to non-light-emitting area from the luminous zone.In some example embodiment, the second electrode 140 can only be arranged in the luminous zone.For example, the second electrode 140 can be formed on organic light-emitting structure 135 and pixel limits on the part (for example sidewall of opening) of layer 130.Here, the second conductive layer (not shown) can be formed on organic light-emitting structure 135 and pixel limits on the layer, then can to the second conductive layer pattern, limit layer 140 so that the pixel in the luminous zone to be provided.
Can have or roughly similarly inclination angle roughly the same with the 4th tiltangleθ 2 according to the 4th tiltangleθ 2, the second electrodes 140 of the sidewall of incline structure 120.For example, the pixel of the second electrode 140 in the luminous zone limits side direction part on the layer 130 and can have with respect to the axis with first substrate 50 almost parallels and be in about 20 ° of inclinations angle in about 70 ° of scopes.
Just have traditional organic light-emitting display device of bottom electrode, organic luminous layer and top electrode, the light that produces from organic luminous layer may total reflection between bottom electrode and top electrode.Therefore, because all reflective light, traditional organic light-emitting display device may have about 30% light loss.Yet, organic light-emitting display device according to example embodiment can comprise the incline structure 120 with concave shape, so that the side direction part of the side direction part of the side direction of the first electrode 125 part, organic light-emitting structure 135 and the second electrode 140 can have for preventing from the inclination angle of all reflective light of organic light-emitting structure 135 generations.Therefore, can guarantee according to the organic light-emitting display device of example embodiment roughly higher at least about 30% the optical efficiency that greatly improves than the optical efficiency of traditional organic light-emitting display device.In addition, according to the organic light-emitting display device of the example embodiment structure of the optical resonance that is used for the light that produces from organic light-emitting structure 135 of needs relative complex not, so that this organic light-emitting display device can have than the structure of traditional organic light-emitting display device simpler structure roughly.And, because the structure of simplifying, can guarantee the visual angle that enlarges according to the organic light-emitting display device of example embodiment.
With reference to Figure 11, can form the second protective layer 145 at the second electrode 140.The second protective layer 145 can extend to non-light-emitting area from the luminous zone.The second protective layer 145 can comprise organic material or inorganic material.The formation such as for example, the second protective layer 145 can make with photoresist, acryloyl group base polymer, polyimide polymer, polyamide polymers, type siloxane polymer, the polymer that comprises photosensitive acryloyl group carboxyl, phenolic resins, alkali soluble resins, Si oxide, silicon nitride, silicon nitrogen oxide, silicon oxycarbide, silicon-carbon nitride, aluminium, magnesium, zinc, hafnium, zirconium, titanium, tantalum, aluminum oxide, titanium oxide, tantalum pentoxide, magnesium oxide, zinc oxide, hafnium oxide, Zirconium oxide.These can use separately or it is used in combination.Consider the composition that comprises in the second protective layer 145, the second protective layer 145 can pass through the acquisitions such as spin coating process, typography, sputtering technology, chemical vapor deposition method, atom layer deposition process, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique, vacuum evaporation process.
Can arrange second substrate 150 at the second protective layer 145.Second substrate 150 can comprise transparent insulation substrate, such as glass substrate, transparent plastic substrate, transparent ceramic substrate etc.In example embodiment, the interval 148 between the second protective layer 145 and the second substrate 150 in the luminous zone can be full of air or inert gas, for example nitrogen.In some example embodiment, the interval 148 in the luminous zone can be full of and have light transmittance and hygroscopic resin.
Figure 12 and Figure 13 are that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment.Except insulating barrier, the first electrode and organic light-emitting structure, the method shown in Figure 12 and Figure 13 can provide to be had with reference Fig. 5 to the structure of the organic light-emitting display device of Figure 11 description organic light-emitting display device roughly the same or that roughly similarly construct.Yet, one skilled in the art will appreciate that the method can provide other organic light-emitting display device of the multiple structure with switching device, protective layer, electrode, insulating barrier, organic light-emitting structure etc.
With reference to Figure 12, can be by the technique of describing with reference Fig. 7 and Fig. 8 roughly the same or roughly similarly technique at first substrate 50 resilient coating 55, switching device and the first protective layer 105 are set.
Can form insulating barrier 110 at the first protective layer 105.Insulating barrier 110 can comprise incline structure 120 and expose the hole of the part of drain electrode 100.Can form a plurality of projections 128 in the bottom of the incline structure 120 of insulating barrier 110.That is to say that projection 128 can be formed on surface corresponding to the bottom with leaning device 120 of insulating barrier 110.The incline structure 120 of insulating barrier 110 can be by or roughly similarly technique acquisition roughly the same with the technique of describing referring to figs. 1 through Fig. 4.In example embodiment, the projection 128 of insulating barrier 110 can form by exposure technology, developing process and/or partially-etched technique are carried out in the surface (being the bottom of incline structure 120) of insulating barrier 110.Here, projection 128 can use intermediate tone mask or halftoning slit mask to obtain.For example, each projection 128 of insulating barrier 110 can have multiple flat shape, such as circular shape, substantially elliptical shape, general conical shape, almost diamond shape, general triangular shape etc.In addition, each projection 128 can have multiple 3D shape, such as island shape roughly, roughly bar shape, roughly body of rod shape, hexahedral shape etc. roughly.
Can form at the insulating barrier 110 with incline structure 120 and projection 128 the first electrode 133 of filler opening.On the bottom corresponding with luminous zone organic light-emitting display device incline structure 120, the first electrode 133 can have respectively a plurality of ledges 134 of contact protrusion 128.In addition, the first electrode 133 is positioned at the inclination angle that side direction part on the sidewall of incline structure 120 can have expectation.Here, the ledge 134 of the first electrode 133 can have or roughly similarly shape roughly the same with the shape of the projection 128 of insulating barrier 110, and this is because ledge 134 is formed by projection 128.In example embodiment, the light (referring to Figure 13) that produces from organic light-emitting structure 155 can be reflected effectively by the ledge 134 of the first electrode 133, so that organic light-emitting display device can have the optical efficiency that more improves.
With reference to Figure 13, can form pixel restriction layer 130 at insulating barrier 110 and the first electrode 133.Pixel limits layer 130 and can use organic material or inorganic material to form.Can limit layer 130 partly etching to pixel, to form the opening of the ledge 134 that exposes the first electrode 133.In the case, the pixel sidewall that limits the opening of layer 130 can have or roughly similarly inclination angle roughly the same with the inclination angle of the sidewall of incline structure 120.
When forming the opening of pixel restriction layer 130, can limit luminous zone and the non-light-emitting area of organic light-emitting display device.Here, the residing first area of opening that pixel limits layer 130 can be the luminous zone, and the second area adjacent with the first area can be non-light-emitting area.The incline structure 130 of insulating barrier 110 can be positioned at the luminous zone, and the first electrode 133 with ledge 134 can roughly be arranged on the bottom and sidewall of the incline structure 120 in the luminous zone equably.In addition, pixel limits layer 130 and can extend in the luminous zone, so that pixel limits on the sidewall that layer 130 can be positioned at incline structure 120 and is positioned on the part of bottom of incline structure 120.Thereby pixel limits the part of layer 130 in the luminous zone can have or roughly similarly inclination angle roughly the same with the inclination angle of incline structure 120.
Can the pixel in the luminous zone limit layer the 130 and first electrode 133 formation organic light-emitting structure 155.Organic light-emitting structure 155 can have the sandwich construction that comprises organic luminous layer, hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer etc.Organic light-emitting structure 155 can with the luminous zone in the first electrode 133 and pixel limit layer 130 and contact.Therefore, the side direction of organic light-emitting structure 155 part can have or roughly similarly inclination angle roughly the same with the inclination angle of the sidewall of incline structure 120.
In example embodiment, the first electrode 133 can be included in the ledge 134 in the luminous zone, so that organic light-emitting structure 155 can have a plurality of roughly groove, pit or indentures corresponding with ledge 134 respectively.That is to say that the lower part of organic light-emitting structure 155 can comprise groove, pit or the indenture that has roughly the shape that the ledge 134 by the first electrode 133 causes.Thus, organic light-emitting structure 155 can have a plurality of parts of being separated by the ledge 134 of the first electrode 133.That is to say that groove, pit or indenture that organic light-emitting structure 155 can be formed by the ledge 134 by the first electrode 133 are separated into a plurality of parts.
Refer now to Figure 13, can limit layer 130 formation the second electrode 140 in organic light-emitting structure 155 and pixel.According to the emitting structural (or transmit direction) of organic light-emitting display device, the second electrode 140 can comprise transparent conductive material.In addition, the second electrode 140 in the luminous zone can have or roughly similarly inclination angle roughly the same with the inclination angle of incline structure 120.
Can form the second protective layer 145 at the second electrode 140.The second protective layer 145 can extend in the non-light-emitting area from the luminous zone.The second protective layer 145 can use organic material or inorganic material to form equally.
Can second substrate 150 be set at the second protective layer 145.Second substrate 150 can comprise transparent insulation substrate, such as glass substrate, transparent ceramic substrate, transparent plastic substrate etc.Interval 148 between the second protective layer 145 and the second substrate 150 can be full of air, inert gas (such as nitrogen), have light transmittance and hygroscopic resin etc.In some example embodiment, according to the additional packing material in the interval 148, between the second electrode 140 and second substrate, can not form the second protective layer 145.
Figure 14 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment to Figure 19.Except the switch device with have the insulating barrier of incline structure, Figure 14 can provide the structure organic light-emitting display device roughly the same or that roughly similarly construct with organic light-emitting display device of describing to Figure 11 with reference Fig. 5 to the method shown in Figure 19.Yet, one skilled in the art will appreciate that the method can provide other organic light-emitting display device of the multiple structure with switching device, protective layer, electrode, insulating barrier, organic light-emitting structure etc.
With reference to Figure 14, can form resilient coating 205 at first substrate 200, then can form gate electrode 210 at resilient coating 205.Resilient coating 205 can use the compound of silicon to form at first substrate 200 by chemical vapor deposition method, plasma enhanced chemical vapor deposition technique, spin coating process or high density plasma CVD technique.
Gate electrode 210 can use metal, alloy, metallic compound and/or transparent conductive material to form, and the gate line (not shown) can be set in the part of resilient coating 205.Gate electrode 210 and gate line can be after forming the first conductive layer (not shown) at resilient coating 205 obtain by etching the first conductive layer partly.In some example embodiment, when on first substrate 200, resilient coating 205 not being set, can on first substrate 200, directly form gate electrode 210 and gate line.
With reference to Figure 15, can form gate insulation layer 215 at resilient coating 205, with covering grid electrode 210.Gate insulation layer 215 can use Si oxide and/or metal oxide to form at resilient coating 205 by sputtering technology, chemical vapor deposition method, typography, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique, vacuum evaporation process or spin coating process.
Gate insulation layer 215 can roughly be formed uniformly on resilient coating 205 along the profile of gate electrode 210.Here, gate insulation layer 215 may have the step shape part that is close to gate electrode 210.In some example embodiment, gate insulation layer 215 can have generally flat surface when abundant covering grid electrode 210.For guaranteeing that gate insulation layer 215 has generally flat surface, can carry out the flatening process that comprises CMP (Chemical Mechanical Polishing) process and/or etch-back technics to gate insulation layer 215.
With reference to Figure 16, can form source electrode 220 and drain electrode 225 at gate insulation layer 215.Each can use the formation such as metal, alloy, metallic compound, transparent conductive material source electrode and drain electrode.Data wire can form the data wire (not shown) in the part of gate insulation layer 215, so that can be connected on the source electrode 220.Data wire can be along extending with the direction of the direction approximate vertical of gate line.In example embodiment, can form the second conductive layer (not shown) at gate insulation layer 215, then the second conductive layer can be partly etched, to be provided at data wire, source electrode 220 and the drain electrode 225 on the gate insulation layer 215.Here, the second conductive layer can pass through the formation such as sputtering technology, vacuum evaporation process, typography, chemical vapor deposition method, atom layer deposition process.
As the center, source electrode 220 and drain electrode 225 can setting disconnected from each other or default distances by gate electrode 210.When gate insulation layer 215 had step shape part, each also may have the step shape part that the step shape part by gate insulation layer 215 causes source electrode 220 and drain electrode 225.After forming source electrode 220 and drain electrode 225, the part of gate insulation layer 215 can expose above gate electrode 210.
Can form active patterns 230 at the gate insulation layer 215 that exposes, source electrode 220 and drain electrode 225.Active patterns 230 can use conductor oxidate to form.For example, active patterns 230 can comprise indium-gallium-zinc oxide (IGZO), gallium zinc oxide (GaZnxOy), indium tin oxide (ITO), gallium zinc oxide (IZO), zinc-magnesium oxide (ZnMgxOy), zinc tin oxide (ZnSnxOy), zinc zirconium oxide (ZnZrxOy), zinc oxide (ZnOx), gallium oxide (GaOx), titanium oxide (TiOx), tin-oxide (SnOx), indium oxide (SnOx), indium-gallium-hafnium oxide (IGHO), tin-aluminium-zinc oxide (TAZO), indium-gallium-tin-oxide (IGSO) etc.These can use separately or it is used in combination.
In example embodiment, can form the active layer (not shown) at source electrode 220, drain electrode 225 and gate insulation layer 215, then can be to the active layer patterning, to be provided at the active patterns 230 on source electrode 220, gate electrode 225 and the gate insulation layer 215.Active layer can pass through the acquisitions such as sputtering technology, chemical vapor deposition method, typography, spraying coating process, vacuum evaporation process, atom layer deposition process, sol-gel technology, plasma enhanced chemical vapor deposition technique.
When forming active patterns 230, can switching device be set at first substrate 200.Switching device can comprise gate electrode 210, gate insulation layer 215, source electrode 220, drain electrode 225 and active patterns 230.Here, switching device can be oxide semiconductor element.
With reference to Figure 17, can form the first protective layer 235 at gate insulation layer 215, to cover active patterns 230, drain electrode 225 and source electrode 220.The first protective layer 235 can have the relatively large thickness of enough covering active patterns 230.The first protective layer 235 can use organic material or inorganic material to form by spin coating process, sputtering technology, typography, chemical vapor deposition method, atom layer deposition process, plasma enhanced chemical vapor deposition technique, high density plasma CVD technique or vacuum evaporation process.In some example embodiment, composition and/or size according to the insulating barrier 245 that continues to form can not provide the first protective layer 235.
Can form insulating barrier 245 at the first protective layer 235.Insulating barrier 245 can have and comprises two with the sandwich construction of upper nonconductive Film.Here, the dielectric film of insulating barrier 245 can comprise or roughly similarly material roughly the same with the material of the first dielectric film 5 and the second dielectric film 15.In addition, the dielectric film of insulating barrier 245 can by roughly the same with the technique that forms the first dielectric film 5 and the second dielectric film 15 or roughly similarly technique form at the first protective layer 235.
Can form incline structure 255 at insulating barrier 245.The sidewall of incline structure 255 can have the 5th tiltangleθ 3.In example embodiment, can form the first dielectric film (not shown) at the first protective layer 235, then can form the first groove (not shown) at the first dielectric film.The first groove can spaced apart setting or default distance.Here, the distance between adjacent the first groove can be roughly the same or roughly similar with the width of the incline structure 255 with the outstanding shape that continues formation.The second dielectric film (not shown) can on the first dielectric film by after the first groove being clipped in mode in the middle of the two and forming, can be to partially-etched above the first groove of the second dielectric film.Therefore, can pass the second dielectric film and form the second groove.The second groove can communicate with the first groove.Then, can reflux to the first dielectric film and the second dielectric film, so that the incline structure 255 with outstanding shape to be provided.In the case, incline structure 255 can be placed on by the first groove and the second groove between the adjacent grooves in conjunction with formation.For example, incline structure 255 can be arranged between two adjacent grooves.The 5th tiltangleθ 3 of incline structure 255 can be roughly the same or roughly similar with the inclination angle of the sidewall of adjacent grooves.For example, the 5th tiltangleθ 3 of outstanding incline structure 255 can be about about 20 ° to about 70 ° with the direction of first substrate 200 almost parallels.
Refer now to Figure 17, can pass the hole 250 that insulating barrier 245 and the first protective layer 235 forming sections expose drain electrode 225.This hole 250 can form when insulating barrier 245 forms outstanding incline structure 255.Alternately, insulating barrier 245 and 235 formation of the first protective layer can be passed in hole 250 after forming incline structure 255.
In example embodiment, the 3rd tiltangleθ 1 of the sidewall of the incline structure 25 that the 5th tiltangleθ 3 of the sidewall of incline structure 255 can be described with reference Fig. 4 is roughly the same or roughly similar.When the incline structure 255 of insulating barrier 245 had outstanding shape, as shown in Figure 17, organic light-emitting display device can have bottom emission structure (or bottom emission direction).
With reference to Figure 18, can form at the insulating barrier 245 with outstanding incline structure 255 the first electrode 260 of filler opening 250.The first electrode 260 can contact with drain electrode 225, and can be positioned on two sidewalls and upper surface of incline structure 255.The first electrode 260 can cover outstanding incline structure 255 so that the side direction of the first electrode 260 part each can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3 of the sidewall of incline structure 255.For example, the side direction of the first electrode 260 part can have with respect to the axis with first substrate 200 almost parallels and is in about 20 ° of inclinations angle in about 70 ° of scopes.
Can form pixel restriction layer 265 at insulating barrier 245 and the first electrode 260, to limit luminous zone and the non-light-emitting area of organic light-emitting display device.Pixel limits layer 265 and can use organic material or inorganic material to form.Pixel limits layer 265 and can extend on the sidewall of the incline structure 255 the luminous zone from non-light-emitting area.That is to say that pixel limits layer 265 and can not be arranged on the upper surface of incline structure 255.Pixel limits layer 265 and can be placed on the first electrode 260 that the sidewall of incline structure 255 is placed so that pixel limit layer 265 the side direction part each can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3 of the sidewall of incline structure 255.
Can form organic light-emitting structure 270 in the part of the first electrode 260 and pixel restriction layer 265.Organic light-emitting structure 270 can have the sandwich construction that comprises organic luminous layer.Although according to the pixel of organic light-emitting display device, organic light-emitting structure 270 can comprise several luminescent substances, organic light-emitting structure 270 can comprise the stacking luminescent material for generation of white light.
In example embodiment, organic light emission mechanism 270 can only be arranged in the luminous zone.For example, organic light-emitting structure 270 can form in upper surface and pixel restriction layer 265 the part in luminous zone of incline structure 255 in the luminous zone.Therefore partly each can have relatively large inclination angle to the side direction of organic light-emitting structure 270.For example, the side direction of organic light-emitting structure 270 part can have about the axis with first substrate 200 almost parallels and is in about 40 ° of inclinations angle in about 90 ° of scopes.Thus, the ratio between the side direction part of the sidewall of the side direction of organic light-emitting structure 270 part and incline structure 255 or pixel restriction layer 265 can be in about 1.0:0.2 in the scope of about 1.0:1.8.
With reference to Figure 19, can limit layer 265 and organic light-emitting structure 270 formation the second electrode 275 in pixel.When organic light-emitting display device had the bottom emission structure, the second electrode 275 can comprise reflecting material.The second electrode 275 can roughly be formed uniformly in pixel and limit on layer 265 and the organic light-emitting structure 270.Here, the part that the sidewall with incline structure 255 of the second electrode 275 is adjacent can have or similar inclination angle roughly roughly the same with the 5th tiltangleθ 3 of incline structure 255.
Can form the second protective layer 280 at the second electrode 275.The second protective layer 280 can comprise organic material or inorganic material, and can extend to non-light-emitting area from the luminous zone.Can arrange second substrate 290 at the second protective layer 280.Here, can between the second protective layer 280 and second substrate 290, form the interval 285 of setting or presetting.This interval 285 can be full of air or inert gas, for example nitrogen.Alternately, this interval 285 can be full of and have light transmittance and hygroscopic resin.In some example embodiment, if on the second electrode 275, can form additional packing material, between the second electrode 275 and second substrate 290, the second protective layer 280 can be set so.
According to example embodiment, because incline structure 255 has outstanding shape, thus the side direction of the first electrode 260 part, pixel limit the side direction part of layer 265 and the second electrode 275 the side direction part each can have the inclination angle that is used for preventing all reflective light that produces from organic light-emitting structure 270 of expectation.Therefore, organic light-emitting display device can have the optical efficiency that greatly improves.
Figure 20 and Figure 21 are that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment.Except insulating barrier, the first electrode and organic light-emitting structure, Figure 20 can provide to the method shown in Figure 21 to have with reference Fig. 5 to the structure of the organic light-emitting display device of Figure 11 description organic light-emitting display device roughly the same or that roughly similarly construct.Yet, one skilled in the art will appreciate that the method can provide have switching device, other organic light-emitting display device of the multiple structure of protective layer, electrode, the insulating barrier with incline structure, organic light-emitting structure etc.
With reference to Figure 20, can be on first substrate 200 by the technique of describing to Figure 17 with reference Figure 14 roughly the same or roughly similarly technique form switching device, the first protective layer 235 and have the insulating barrier 245 of incline structure 255.
As shown in Figure 20, can by carry out with the technique of describing with reference to Figure 12 roughly the same or roughly similarly technique form a plurality of projections 258 at outstanding incline structure 255.Therefore, insulating barrier 245 can have a plurality of projections 258, and the sidewall of outstanding incline structure 255 each can have the 5th tiltangleθ 3.
Can form the first electrode 300 at the insulating barrier 245 with incline structure 255, to fill up the hole of passing insulating barrier 245 and 235 formation of the first protective layer.Each can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3 of the sidewall of incline structure 255 side direction of the first electrode 300 part.In addition, the first electrode 300 can have a plurality of ledges 303 that the projection 258 by insulating barrier 245 causes.
Can limit layer 265 in the pixel that the first electrode 300 and insulating barrier 245 are formed for limiting luminous zone and non-light-emitting area.Pixel limits layer 265 and can extend on the sidewall of the incline structure 255 that is arranged on the luminous zone from non-light-emitting area.Pixel limits layer 265 and can be located on the first electrode 300 of placing on the sidewall of outstanding incline structure 255, can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3 of the sidewall of incline structure 255 so that pixel limits the side direction part of layer 265.
Can limit layer 265 formation organic light-emitting structure 315 at the first electrode 300 and pixel.In example embodiment, upper surface and pixel that organic light-emitting structure 315 can only be arranged in outstanding incline structure 255 limit on the part of layer 265.Therefore, partly each can have relatively large inclination angle to the side direction of organic light-emitting structure 315.When organic light-emitting structure 315 was formed on the first electrode 300 with ledge 303, organic light-emitting structure 315 can comprise groove, pit or the indenture that a plurality of and ledge 303 are corresponding.Therefore, organic light-emitting structure 315 can be separated into a plurality of parts by groove, pit or indenture.
With reference to Figure 21, can limit layer 265 and organic light-emitting structure 315 formation the second electrode 275 in pixel.If organic light-emitting display device has the bottom emission structure, the second electrode 275 can comprise reflecting material so.The second electrode 275 can be arranged in equably along the profile of organic light-emitting structure 315 pixel and limit on layer 265 and the organic light-emitting structure 315.In addition, the contiguous part of the second electrode 275 and the sidewall of incline structure 255 can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3.
Can form the second protective layer 280 at the second electrode 275.The second protective layer 280 not only can be arranged in the luminous zone but also can be arranged in the non-light-emitting area.Can second substrate 290 be set at the second protective layer 280, between the second protective layer 280 and second substrate 290, may insert default interval 285 simultaneously.Yet, when between the second electrode 275 and second substrate 290, inserting additional packing material or packed layer, can not form the second protective layer 280 at the second electrode 275.
Figure 22 is that diagram is according to the profile of the method for the manufacturing organic light-emitting display device of some example embodiment to Figure 24.Except the insulating barrier with incline structure, the first electrode, pixel limited layer and organic light-emitting structure, Figure 22 can provide to the method shown in Figure 24 to have with reference Fig. 5 to the structure of the organic light-emitting display device of Figure 11 description organic light-emitting display device roughly the same or that roughly similarly construct.Yet, one skilled in the art will appreciate that the method can provide other organic light-emitting display device of the multiple structure with switching device, protective layer, electrode, insulating barrier, organic light-emitting structure etc.
With reference to Figure 22, can be on first substrate 350 by the technique of describing with reference Fig. 7 and Fig. 8 roughly the same or roughly similarly technique form resilient coating 355, switching device and the first protective layer 395.Here, switching device can comprise semiconductor pattern, gate insulation layer 360, gate electrode 363, insulating interlayer 380, source electrode 385 and drain electrode 390.The semiconductor pattern of switching device can be divided into source region 365, drain region 370 and channel region 375.
Can form the insulating barrier 400 with outstanding incline structure 405 at the first protective layer 395.In addition, insulating barrier 400 can comprise the hole of a part that exposes drain electrode 390.Insulating barrier 400 can have the sandwich construction that comprises at least two dielectric films.These dielectric films of insulating barrier 400 can use with the material of see figures.1.and.2 the first dielectric film 5 of describing and the second dielectric film 15 roughly the same or roughly similarly material form.In addition, the dielectric film of insulating barrier 400 can be by or roughly similarly technique acquisition roughly the same with the technique that is used to form the first dielectric film 5 and the second dielectric film 15 of the description that sees figures.1.and.2.
In example embodiment, can form the first dielectric film (not shown) and the second dielectric film (not shown) at the first protective layer 395.The first dielectric film and the second dielectric film can have respectively generally flat surface.Can on the second dielectric film, form the first groove (not shown) with default distance.Here, the distance between adjacent the first groove can be roughly the same or roughly similar with the width of the incline structure 405 that continues to form.Can form the 3rd dielectric film (not shown) at the second dielectric film, this moment, the first groove was between the second dielectric film and the 3rd dielectric film.Then, can remove the part of the 3rd dielectric film above the first groove, pass the second groove of the 3rd dielectric film with formation.Each second groove can communicate with the first related groove.After to the second dielectric film and the 3rd dielectric film execution backflow, can outstanding incline structure 405 be set at insulating barrier 400.Outstanding incline structure 405 can be arranged between the first adjacent groove or adjacent the second groove.If the incline structure 405 of insulating barrier 400 has outstanding shape, organic light-emitting display device can have the bottom emission structure so.The sidewall of incline structure 405 can have or roughly similar five tiltangleθ 3 roughly the same with the inclination angle of the adjacent grooves that is formed by the first groove and the second groove combination.For example, the sidewall of incline structure 405 can have with reference to being in about 20 ° of the 5th tiltangleθs 3 in about 70 ° of scopes with the direction of first substrate 350 almost parallels.
Can form the first electrode 410 at the insulating barrier 400 with outstanding incline structure 405, be filled to simultaneously the hole that partly exposes drain electrode 390 and pass insulating barrier 400 formation.In example embodiment, can form the first electrode layer (not shown) at insulating barrier 400, to be full of this hole, then can form the etching mask (not shown) at the first electrode layer.Can use etching mask to the first electrode layer patterning, so that can form the first electrode 410 that separates in the neighbor district at insulating barrier 400.Each first electrode 410 can contact with drain electrode 390 and can be positioned on the sidewall and upper surface of outstanding sloping portion 405.Because the first electrode 410 is arranged on the outstanding incline structure 405, so the side direction of the first electrode 410 part can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3 of incline structure 405.For example, each side direction of the first electrode 410 part can have about the axis with the first substrate almost parallel and is in about 20 ° of inclinations angle in about 70 ° of scopes.
With reference to Figure 23, can form pixel restriction layer 415 at the first electrode 410 and insulating barrier 400, to limit luminous zone and the non-light-emitting area of organic light-emitting display device.Pixel limits layer 415 and can use organic material or inorganic material to form.Pixel limits layer 415 and can extend on the incline structure 405 of placing the luminous zone from non-light-emitting area.
In example embodiment, pixel limits layer 415 can extend, to cover the first electrode 410 in the luminous zone.In the case, can pass pixel and limit layer 415 formation opening, with the first electrode 410 of placing on the upper surface that is exposed to incline structure 405.The opening that pixel limits layer 415 can comprise the sidewall with six tiltangleθ 4 substantially different from the 5th tiltangleθ 3 of the sidewall of incline structure 405.For example, the pixel sidewall that limits the opening of layer 415 can have about the direction with first substrate 350 almost parallels and is in about 110 ° of the 6th tiltangleθs 4 in about 160 ° of scopes.This pixel with opening limits the luminous zone that layer 415 can limit organic light-emitting display device.In addition, pixel limits side direction part on the sidewall that is arranged in incline structure 405 of layer 415 and can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3.
Can in the opening of pixel restriction layer 415, form organic light-emitting structure 420 at the first electrode 410.In example embodiment, organic light-emitting structure 420 can be buried (filling) in pixel limits the opening of layer 415.That is to say that organic light-emitting structure 420 fully filler pixels limits the opening of layer 415, and can have generally flat surface.Thus, the sidewall of organic light-emitting structure 420 can have or roughly similarly inclination angle roughly the same with the 6th tiltangleθ 4 of the sidewall of opening.For example, the sidewall of organic light-emitting structure 420 can have about the axis with first substrate 350 almost parallels and is in about 110 ° of inclinations angle in about 160 ° of scopes.Therefore, the sidewall of organic light-emitting structure 420 can be in about 1.0:1.6 in the relatively large scope of about 1.0:8.0 with respect to the sidewall of outstanding incline structure 405, the side direction part of the first electrode 410 or the ratio of the side direction part that pixel limits layer 415.In the pixel of organic light-emitting display device, organic light-emitting structure 420 can have the sandwich construction that comprises organic luminous layer.Organic light-emitting structure 420 can comprise respectively different luminescent materials.Alternately, all organic light-emitting structure 420 can comprise the stacking luminescent material for generation of white light.
With reference to Figure 24, can limit layer 415 and organic light-emitting structure 420 formation the second electrode 425 in pixel.When organic light-emitting display device had the bottom emission structure, the second electrode 425 can have reflecting material.The second electrode 425 can roughly be formed uniformly in pixel and limit on layer 415 and the organic light-emitting structure 420.In the case, the contiguous part of the sidewall of incline structure 405 the second electrode 425 and outstanding can have or roughly similarly inclination angle roughly the same with the 5th tiltangleθ 3.
Can form the second protective layer 430 at the second electrode 425.The second protective layer 430 can comprise organic material or inorganic material, and can extend to non-light-emitting area from the luminous zone.Can arrange the second substrate 450 that comprises transparent insulation substrate at the second protective layer 430.Here, the interval 435 of setting or presetting can be set between the second protective layer 430 and second substrate 450 in the luminous zone.Although air or inert gas (for example nitrogen) can be full of interval 435, according to the needs on opportunity, have light transmittance and hygroscopic resin and can fill up this interval 435.In some example embodiment, between the second electrode 425 and second substrate 450, can not form the second protective layer 430 according to the additional packing material in the interval 435.
According to example embodiment, be to prevent that all reflective light that produces, outstanding incline structure 405 from can provide the side direction part of the first electrode 410 with expectation inclination angle, side direction part that pixel limits layer 415 and the side direction part of the second electrode 425 from organic light-emitting structure 420.Therefore, organic light-emitting display device can guarantee the optical efficiency that significantly improves.In addition, organic light-emitting structure 420 can be embedded in the opening of pixel restriction layer 415, so that the light that enters in the non-light-emitting area can reflect towards the luminous zone by the second electrode 425 of arranging above the incline structure 405 with outstanding shape.
According to example embodiment of the present invention, organic light-emitting display device can comprise the insulating barrier with the incline structure that contains concave shape or outstanding shape, and the structure of not adding the optical resonance of any light for producing from organic light-emitting structure.Therefore, this organic light-emitting display device can have significantly the optical efficiency greater than the optical efficiency of traditional organic light-emitting display device.Thus, this organic light-emitting display device can show image with brightness, the contrast of increase and the visual angle of expansion etc. of improving.
Foregoing has illustrated example embodiment, and should not be interpreted as the restriction of example embodiment.Although described several example embodiment, those skilled in the art can understand easily, may carry out many modifications in example embodiment, and in fact not deviate from novel teachings and the advantage of example embodiment.Therefore, all such modifications are intended to be included in the scope of the example embodiment that limits in the claims.In the claims, device add function items be intended to contain among the present invention carry out the structure described when putting down in writing function, not only comprise structural equivalents, also comprise equivalent construction.Therefore, should be understood that foregoing has illustrated example embodiment and should not be construed as to be confined to disclosed specific embodiment, and the modification of disclosed example embodiment and other example embodiment is intended to comprise within the scope of the appended claims.The present invention is limited by following claim, and the equivalent of claim is included in the present invention.

Claims (27)

1. one kind forms the method for incline structure at insulating barrier, and described method comprises:
Form the first groove at the first dielectric film;
Form the second dielectric film at described the first dielectric film with described first groove;
Form the second groove at described the second dielectric film; And
By described the first dielectric film and described the second dielectric film are carried out reflux technique, form described incline structure from described the first groove and described the second groove.
2. according to claim 1ly form the method for incline structure at insulating barrier, each in wherein said the first dielectric film and described the second dielectric film comprises select at least a from the group that compound, metal and metal oxide by organic material, silicon form.
3. according to claim 2ly form the method for incline structure at insulating barrier, each in wherein said the first dielectric film and described the second dielectric film comprises from by photoresist; the acryloyl group base polymer; the polyimides base polymer; polyamide polymers; the type siloxane polymer; the polymer that comprises photosensitive acryloyl group carboxyl; phenolic resins; alkali soluble resins; Si oxide; silicon nitride; the silicon nitrogen oxide; silicon oxycarbide; silicon-carbon nitride; aluminium; magnesium; zinc; hafnium; zirconium; titanium; tantalum; aluminum oxide; titanium oxide; tantalum pentoxide; magnesium oxide; zinc oxide; that selects in the group that hafnium oxide and Zirconium oxide form is at least a.
4. according to claim 1ly form the method for incline structure at insulating barrier, each in wherein said the first groove and described the second groove is to use that to have covering of light-blocking region and half transmitting district film formed.
5. according to claim 1ly form the method for incline structure at insulating barrier, wherein said the first groove has the degree of depth greater than the degree of depth of described the second groove, and described the second groove has the width greater than the width of described the first groove.
6. the method at insulating barrier formation incline structure according to claim 1 also is included in after described the first groove of formation, to sidewall and the bottom actuating surface treatment process of described the first groove.
7. according to claim 1ly form the method for incline structure at insulating barrier, wherein said reflux technique is to carry out under the temperature in 50% to 80% scope of the fusing point of described the first dielectric film and described the second dielectric film.
8. according to claim 1ly form the method for incline structure at insulating barrier, wherein said incline structure has the shape of depression or outstanding shape.
9. according to claim 8ly form the method for incline structure at insulating barrier, the ratio between the inclination angle of the sidewall of the inclination angle of the sidewall of wherein said incline structure and described the first groove and the sidewall of described the second groove is in 1.0:0.2 in the scope of 1.0:1.8.
10. organic light-emitting display device comprises:
First substrate;
Be positioned at the insulating barrier on the described first substrate, described insulating barrier comprises incline structure;
Be positioned at the first electrode on the described insulating barrier;
The pixel that is positioned on described insulating barrier and described the first electrode limits layer, and described pixel limits layer and limits luminous zone and non-light-emitting area;
Be arranged in the organic light-emitting structure on described first electrode of described luminous zone;
Be positioned at the second electrode on described pixel restriction layer and the described organic light-emitting structure; And
Be positioned at the second substrate on described the second electrode.
11. organic light-emitting display device according to claim 10, wherein said pixel limit layer and extend at described the first electrode that is arranged on the sidewall of described incline structure.
12. organic light-emitting display device according to claim 10, wherein said pixel limits layer extends at described the first electrode that is arranged on the upper surface of described incline structure, and described pixel limits the opening that layer has described the first electrode in the described luminous zone of exposure.
13. organic light-emitting display device according to claim 12, wherein said organic light-emitting structure are arranged in the described opening of described pixel restriction layer.
14. organic light-emitting display device according to claim 13, the sidewall of wherein said organic light-emitting structure have the inclination angle with respect to 110 ° to 160 ° in the direction parallel with described first substrate.
15. organic light-emitting display device according to claim 10, the sidewall of wherein said incline structure have the inclination angle with respect to 20 ° to 70 ° in the direction parallel with described first substrate.
Each in partly of side direction on described incline structure has the inclination angle identical with the inclination angle of the described sidewall of described incline structure 16. organic light-emitting display device according to claim 15, wherein said the first electrode are in the side direction on described incline structure part and described the second electrode.
17. organic light-emitting display device according to claim 10, wherein said insulating barrier have a plurality of projections on described incline structure.
18. organic light-emitting display device according to claim 17, wherein said the first electrode has a plurality of ledges that are respectively formed on described a plurality of projection.
19. organic light-emitting display device according to claim 18, wherein said organic light-emitting structure have a plurality of parts of being separated by described a plurality of ledges of described the first electrode.
20. organic light-emitting display device according to claim 10, wherein said incline structure has the shape of depression, and the sidewall of described incline structure has the inclination angle identical with the inclination angle of the sidewall of described organic light-emitting structure.
21. organic light-emitting display device according to claim 10, wherein said incline structure has outstanding shape, and the ratio between the inclination angle of the sidewall of the inclination angle of the sidewall of described incline structure and described organic light-emitting structure is in 1.0:0.2 in the scope of 1.0:1.8.
22. a method of making organic light-emitting display device, described method comprises:
Form insulating barrier at first substrate;
Form incline structure at described insulating barrier;
Form the first electrode at described insulating barrier;
Form pixel restriction layer at described insulating barrier and described the first electrode;
Limit layer by the described pixel of etching partly, form the opening that is exposed to described the first electrode that arranges on the described incline structure;
Form organic light-emitting structure at the first electrode that exposes;
Limit layer and described organic light-emitting structure formation the second electrode in described pixel; And
Form second substrate at described the second electrode.
23. the method for manufacturing organic light-emitting display device according to claim 22 wherein forms described insulating barrier and comprises with the described incline structure of formation:
Form the first dielectric film at described first substrate;
Form the first groove at described the first dielectric film;
Form the second dielectric film at described the first dielectric film with described first groove;
Form the second groove at described the second dielectric film; And
By described the first dielectric film and described the second dielectric film are carried out backflow, form described incline structure from described the first groove and described the second groove.
24. the method for manufacturing organic light-emitting display device according to claim 22 wherein forms described insulating barrier and comprises with the described incline structure of formation:
Form the first dielectric film at described first substrate;
Form the first groove at described the first dielectric film, described the first groove is separated from each other;
Form the second dielectric film at described the first dielectric film with described first groove;
The part above described the first groove at described the second dielectric film forms the second groove; And
By described the first dielectric film and described the second dielectric film are carried out backflow, form the described incline structure with the outstanding shape between adjacent grooves.
25. the method for manufacturing organic light-emitting display device according to claim 22 also is included in and forms a plurality of projections on the bottom of described incline structure.
26. the method for manufacturing organic light-emitting display device according to claim 25 also comprises a plurality of ledges that form described the first electrode, wherein said a plurality of ledges are formed by described a plurality of projections.
27. the method for manufacturing organic light-emitting display device according to claim 26, some of described organic light-emitting structure are separated by described a plurality of ledges of described the first electrode.
CN201210223710.1A 2011-06-29 2012-06-29 Form the method for incline structure, organic light-emitting display device and manufacture method thereof Active CN103000823B (en)

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