CN107403644B - Flash memory device with abnormal power protection - Google Patents
Flash memory device with abnormal power protection Download PDFInfo
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- CN107403644B CN107403644B CN201710363285.9A CN201710363285A CN107403644B CN 107403644 B CN107403644 B CN 107403644B CN 201710363285 A CN201710363285 A CN 201710363285A CN 107403644 B CN107403644 B CN 107403644B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
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Abstract
The invention provides a flash memory device with abnormal power protection, which comprises a controller, a plurality of flash memories, a switch, a power module and a voltage detection circuit, wherein the voltage detection circuit detects a system voltage, when the system voltage is higher than a voltage threshold value, the voltage detection circuit outputs an enabling signal to the switch to conduct the switch, the system voltage is supplied to the power module through the switch, the power module executes a charging program through the system voltage and generates an output voltage according to the system voltage, and the output voltage is used as the working voltage of the controller and the flash memories; when the system voltage is lower than the voltage threshold, the voltage detection circuit outputs a disabling signal to the switch to disconnect the switch, the system voltage disables power supply to the power module, and the power module generates the output voltage by executing a discharging program.
Description
Technical Field
The present invention relates to a flash memory device, and more particularly, to a flash memory device with abnormal power protection.
Background
Flash memory devices (such as SSD, SD card, CF card, and flash drive) are powered on (power on) to cause power failure (boot fail) due to the unstable power supply. Furthermore, when data writing is performed, if power failure or abnormal or unstable voltage is suddenly encountered, the flash memory device will lose power supply or voltage drop, which causes data to be written into the flash memory device without smoothness and results in data damage.
Therefore, in order to avoid power failure of the flash memory device when performing a write operation of important data (e.g., financial data), an energy storage component (e.g., a super capacitor) capable of providing a backup power source may be disposed in the flash memory device. When power failure occurs, the energy storage component discharges to provide an operating voltage required by the flash memory device to perform data writing. However, before the energy storage device is completely discharged, if the host computer restarts the power supply (re-power on) in advance, the controller of the flash memory device will continuously receive the discharge energy of the energy storage device, so that the flash memory device has an abnormal voltage level without taking care of a restart initialization command (initial command) transmitted by the host computer, which will cause the system restart failure of the flash memory device and make the host computer unable to access the flash memory device.
Disclosure of Invention
One objective of the present invention is to provide a flash memory device with abnormal power protection, wherein the flash memory device utilizes a voltage detection circuit to detect a system voltage provided by a computer host, and when the system voltage is higher than a voltage threshold, the voltage detection circuit will send an enable signal to allow the system voltage to supply power to the flash memory device; on the contrary, when the system voltage is lower than the voltage threshold, the voltage detection circuit sends out a disabling signal to prohibit the system voltage from supplying power to the flash memory device.
An objective of the present invention is to provide a flash memory device with abnormal power protection, wherein the flash memory device is provided with a power module, and a discharge energy of the power module can fill up the shortage of the system voltage, so that the operating voltage of the flash memory device can be maintained at a stable voltage level.
One objective of the present invention is to provide a flash memory device with abnormal power protection, wherein a voltage detection circuit is configured with a function of delaying power restart, and when the system voltage returns from below a voltage threshold to above the voltage threshold, the voltage detection circuit can delay the power restart time to complete the complete discharge of the power module or allow a residual voltage of the power module to reach a minimum allowable value, so that the host computer can successfully execute a system restart for the flash memory device.
An objective of the present invention is to provide a flash memory device with abnormal power protection, wherein the flash memory device is provided with a controller having a firmware, the firmware is configured with at least one starting condition for abnormal voltage protection, when the system voltage is lower than a voltage threshold, the firmware will further determine whether the current system voltage meets the starting condition for abnormal voltage protection to determine whether an abnormal voltage protection mechanism is started, so as to prevent the flash memory device from repeatedly executing the abnormal voltage protection mechanism in a short time, and improve the stability of the operation of the flash memory device.
To achieve the above object, the present invention provides a flash memory device with abnormal power protection, comprising: a controller; a plurality of flash memories; a switch for receiving a system voltage; the power supply module is respectively connected with the controller, the flash memory and the switch and used for generating an output voltage to the controller and the flash memory; and a voltage detection circuit, connect the switch, in order to detect the system voltage, when the system voltage is higher than a voltage threshold, the voltage detection circuit outputs an enabling signal to the switch in order to turn on the switch, the system voltage supplies power to the power module through the switch, the power module passes the system voltage in order to carry out a procedure charged and produce the output voltage according to the system voltage; when the system voltage is lower than the voltage threshold value, the voltage detection circuit outputs a disabling signal to the switch to disconnect the switch, the system voltage disables power supply to the capacitor module, and the power supply module generates output voltage by executing a discharging program; when the system voltage returns from being lower than the voltage threshold to being higher than the voltage threshold, the voltage detection circuit outputs the enabling signal to the switch again to conduct the switch after a delay time, the system voltage supplies power to the power module again through the conducted switch, and before the voltage detection circuit outputs the enabling signal again, the power module is discharged completely or a residual voltage of the power module reaches a lowest allowable value.
In an embodiment of the invention, the voltage detection circuit has a function of delaying power restart, and the function of delaying power restart is set with a delay time.
In an embodiment of the invention, the function of delaying the power restart sets the delay time according to an energy storage capacity of the power module.
In an embodiment of the invention, the flash memory device is connected with a computer host, the system voltage is provided by the computer host, and when the system voltage returns from being lower than the voltage threshold to being higher than the voltage threshold and the voltage detection circuit outputs the enabling signal again, the computer host issues a system restart command to the controller of the flash memory device again to restart a system of the flash memory device.
In an embodiment of the invention, when the switch is turned off, the controller executes a data backup program by using a discharge energy of the power module to backup at least one data in the flash memory.
In one embodiment of the present invention, the flash memory device is connected to a host computer, the system voltage is provided by the host computer, when the host computer is powered on for the first time, if the system voltage is higher than the voltage threshold, the voltage detection circuit outputs an enable signal to the switch, and the host computer allows the flash memory device to execute a boot program; on the contrary, if the system voltage is lower than the voltage threshold, the voltage detection circuit outputs a disable signal to the switch, and the host computer cannot execute the boot program for the flash memory device.
In an embodiment of the present invention, a voltage detection circuit includes: a voltage comparator for comparing the system voltage with the voltage threshold to determine to output a first signal with a high level or a low level; and the OR gate comprises a first input end, a second input end and an output end, the first input end is connected with the voltage comparator, the second input end is connected with the controller, the output end is connected with the switch, the controller outputs a second signal with a high level or a low level to the OR gate, and the OR gate determines to output an enable signal or a disable signal according to the first signal and the second signal.
In an embodiment of the invention, the controller includes a general purpose input/output port, and the controller is connected to the second input terminal of the or gate through the general purpose input/output port.
In an embodiment of the invention, the voltage comparator is a comparator with a delay function, and when the system voltage returns from being lower than the voltage threshold to being higher than the voltage threshold, the voltage comparator outputs the first signal with the high level to the or gate after a delay time.
In an embodiment of the invention, the power module includes a voltage booster, a voltage reducer and at least one energy storage component, the energy storage component is connected between the voltage booster and the voltage reducer, the voltage booster boosts a system voltage to generate a first high voltage, the energy storage component is charged by the first high voltage, and the voltage reducer reduces the first high voltage to generate the output voltage.
The invention provides a flash memory device with abnormal power protection, comprising: a controller, which is built with a firmware, the firmware is set with at least one starting condition for abnormal voltage protection; a plurality of flash memories; a switch for receiving system voltage; the power supply module is respectively connected with the controller, the flash memory and the switch and used for generating an output voltage to the controller and the flash memory; a voltage detector for receiving the system voltage and connected to the controller, the controller detecting the system voltage via the voltage detector; and a voltage detection circuit, connect the switch, in order to detect the system voltage, when the system voltage is higher than a voltage threshold or not in conformity with the starting condition protected by the abnormal voltage, the controller outputs a second signal of a high quasi-position to the voltage detection circuit, the voltage detection circuit outputs an enabling signal to the switch in order to turn on the switch, the system voltage supplies power to the power module through the switch, the power module passes the system voltage in order to carry out a procedure charged and produce the output voltage according to the system voltage; when the system voltage is lower than the voltage threshold and meets the starting condition of abnormal voltage protection, the controller outputs a low-level second signal to the voltage detection circuit, the voltage detection circuit outputs a disabling signal to the switch to disconnect the switch, the system voltage prohibits power supply to the power supply module, and the power supply module generates output voltage by executing a discharging program.
In an embodiment of the present invention, the firmware of the controller sets the starting condition of the abnormal voltage protection such that the number of times that the system voltage drifts below the voltage threshold exceeds a rated number of times in a unit time.
In an embodiment of the present invention, the start condition of the abnormal voltage protection set by the firmware of the controller is that the time when the system voltage is lower than the voltage threshold value continuously exceeds a unit time.
Drawings
FIG. 1 is a block diagram of a flash memory device according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating an operation of a flash memory device according to an embodiment of the present invention.
FIG. 3 is a diagram of a system voltage compensation method for discharging energy of a flash memory device using a power module according to an embodiment of the present invention.
Fig. 4 is a circuit structure diagram of a power module according to an embodiment of the invention.
[ main assembly symbol description ]:
10 computer host 101 transmission interface
11 control interface 30 flash memory
31 controller 311 general input/output port
313 firmware 32 voltage detector
33 flash 35 voltage detection circuit
351 voltage comparator 353 or gate
37 switch 39 power module
391 booster 393 energy storage assembly
395 step-down transformer
Detailed Description
Fig. 1 and fig. 2 are schematic circuit block diagrams of a flash memory device according to an embodiment of the invention and an operation diagram of the flash memory device according to an embodiment of the invention. As shown in fig. 1, the flash memory device 30 is electrically connected to a host computer 10, and performs data transmission with the host computer 10 through a transmission interface 101. The transmission interface 101 is a data transmission interface conforming to USB, PCIe, SATA3 or other standard specifications. The host computer 10 can perform data access to the flash memory device 30 or control the operation of the flash memory device 30 by using the transmission interface 101.
The flash memory device 30 includes a controller 31, a plurality of flash memories 33, a voltage detection circuit 35, a switch 37 and a power module 39. The switch 37 is connected to the voltage detection circuit 35 and the power module 39, the controller 31 and the flash memory 33 are connected to the power module 39, and the controller 31 is connected to the voltage detection circuit 35 through a General-Purpose Input/Output (GPIO) 311.
The host computer 10 provides a system voltage Vs to the flash memory device 30 to provide the energy required by the operation of the flash memory device 30. When the voltage detection circuit 35 of the flash memory device 30 receives the system voltage Vs, it is detected whether the system voltage Vs is lower than a voltage threshold Vth. In the present invention, the voltage threshold Vth is the lowest voltage value at which the flash memory device 30 can normally operate.
As shown in fig. 2, when the system voltage Vs is higher than the voltage threshold Vth, the voltage detection circuit 35 outputs an enable signal EN to the switch 37 to turn on the switch 37. The system voltage Vs will be supplied to the power supply module 39 via the switch 37. Then, the power module 39 performs a charging process using the system voltage Vs, generates an output voltage Vout according to the system voltage Vs, and transmits the output voltage Vout to the controller 31 and the flash memory 33. The output voltage Vout is used as an operating voltage of the controller 31 and the flash memory 33.
On the contrary, when the system voltage Vs is lower than the voltage threshold Vth, the voltage detection circuit 35 starts an abnormal voltage protection mechanism, and outputs a disable signal DIS to the switch 37 to turn off the switch 37, so that the system voltage Vs prohibits power supply to the power module 39. Then, the power module 39 performs discharging to generate the output voltage Vout by using a discharging energy, and transmits the output voltage Vout generated by discharging to the controller 31 and the flash memory 33. At the same time, the controller 31 immediately starts a data backup process to backup important data in the flash memory 33 as soon as possible before the output voltage Vout generated by discharging is higher than the voltage threshold Vth, so as to avoid losing the important data. In the present invention, the controller 31 can execute the data backup from the time the voltage detection circuit 35 issues the disable signal DIS to the time the output voltage Vout is still higher than the voltage threshold Vth.
Subsequently, when the system voltage Vs is restored from being lower than the voltage threshold Vth to being higher than the voltage threshold Vth, the host computer 10 may execute a system restart procedure for the flash memory device 30 to restart the system of the flash memory device 30. However, when the host computer 10 executes the system reboot procedure on the flash memory device 30, if the power module 39 has not been discharged or a residual voltage of the power module 39 does not reach a minimum allowable value accepted by the system, the system reboot of the flash memory device 30 will fail. Therefore, the voltage detection circuit 35 of the present invention further has a function of delaying the power restart, so that the power storage charge of the power module 39 can be completely discharged or reach a reasonable residual voltage acceptable by the circuit by delaying the power restart time, and the system restart procedure of the flash memory device 30 is executed only after the power module 39 is completely discharged or the residual voltage of the power module 39 reaches a minimum allowable value. In the present invention, the function of delaying the power restart is to set a delay power restart time (Td).
The function of delaying power restart is performed as follows: when the system voltage Vs is restored from being lower than the voltage threshold Vth to being higher than the voltage threshold Vth, the voltage detection circuit 35 performs the function of delaying the power restart, so that after a period of time (Td) of delaying the power restart, the voltage detection circuit 35 outputs the enable signal EN to the switch 37 to restart the switch 37, so that the system voltage Vs can be supplied to the flash memory device 30 again. In the present invention, the voltage detection circuit 35 relatively sets the delay power restart time (Td) according to the energy storage capacity of the power module 39, for example: the greater the amount of energy stored in the power module 39, the longer the delay time (Td) for the power restart will be set, so that the power module 39 is discharged or the residual voltage of the power module 39 reaches the minimum allowable value before the power restart.
Moreover, since the power module 39 is completely discharged or the residual voltage of the power module 39 has reached the minimum allowable value, the host computer 10 can issue a system restart command to the controller 31 of the flash memory device 30, and the controller 31 can smoothly restart the system of the flash memory device 30 according to the system restart command issued by the host computer 10.
Therefore, when the system voltage Vs is lower than the voltage threshold Vth due to sudden power failure or excessive voltage amplitude jitter, the voltage detection circuit 35 will start the abnormal voltage protection mechanism, so that the flash memory device 30 avoids operating in an abnormal power environment to ensure the reliability of data access of the flash memory device 30. And, only when the energy storage capacity of the power module 39 is exhausted or the residual voltage has reached the minimum allowable value, the system restart is performed on the flash memory device 30, so as to ensure the success of the system restart of the flash memory device 30.
Fig. 3 is a waveform diagram of a system voltage and an output voltage of a flash memory device according to another embodiment of the present invention, and also refer to fig. 1. The allowable drift range of the conventional flash memory device for the system voltage Vs provided by the host computer 10 is typically ± 5%. If the drop amplitude of the system voltage Vs exceeds-5%, the voltage value of the system voltage Vs may also be lower than the voltage threshold Vth, which may cause the flash memory device 30 to fail to operate normally. Thus, the flash memory device 30 of the present invention is further provided with a power supply module 39. When the system voltage Vs fluctuates, the power module 39 provides a discharging energy to compensate for the shortage of the system voltage Vs, so that the output voltage Vout generated by the power module 39 can be maintained at a stable voltage level to keep the controller 31 and the flash memory 33 operating normally. As shown in fig. 3, during Tc, the system voltage Vs fluctuates, and the discharging energy of the power module 39 can compensate for the system voltage Vs not enough to maintain the generated output voltage Vout at a stable voltage level. In this case, the flash memory device 30 tolerates the drop of the system voltage Vs by more than-5% through the power module 39.
Referring again to fig. 1, the voltage detection circuit 35 includes a voltage comparator 351 and an or gate 353. The or gate 353 includes a first input terminal, a second input terminal and an output terminal. The first input terminal is connected to the voltage comparator 351, the second input terminal is connected to the general-purpose input/output port 311 of the controller 31, and the output terminal is connected to the switch 37. The voltage comparator 351 compares the system voltage Vs and the voltage threshold Vth to determine to output a high-level or low-level first signal S1 to the or gate 353. The controller 31 outputs a high or low second signal S2 to the OR gate 353 through the general purpose input/output port 311. The or gate 353 determines the output enable signal EN or the disable signal DIS according to the levels of the first signal S1 and the second signal S2.
In the present invention, the controller 31 defaults the second signal S2 to a low level signal. When the host computer 10 is powered on for the first time, the voltage comparator 351 of the voltage detection circuit 35 compares whether the system voltage Vs is higher than the voltage threshold Vth. If the system voltage Vs is lower than the voltage threshold Vth, the voltage comparator 351 outputs a low-level first signal S1, or the gate 353 outputs a disable signal DIS to the switch 37 according to the low-level first signal S1 and the low-level second signal S2, so as to prohibit the system voltage Vs from powering the flash memory device 30 and prevent the host computer 10 from booting (booting) the flash memory device 30; on the contrary, if the system voltage Vs is higher than the voltage threshold Vth, the voltage comparator 351 outputs the first signal S1 with a high level, and the or gate 353 outputs an enable signal EN to the switch 37 according to the first signal S1 with a high level and the second signal S2 with a low level, so that the system voltage Vs supplies power to the flash memory device 30, and the host computer 10 can perform boot (boot) on the flash memory device 30.
When the flash memory device 30 is turned on and is running, the voltage detection circuit 35 continuously detects whether the system voltage Vs is abnormal. When the voltage comparator 351 compares that the system voltage Vs is higher than the voltage threshold Vth, it outputs a first signal S1 with a high level. Then, the or gate 353 outputs the enabling signal to the switch 37 according to the high-level first signal S1 and the low-level second signal S2, the system voltage Vs is supplied to the inside of the flash memory device 30 through the switch 37, and the flash memory device 30 operates in a normal operation state. When the voltage comparator 351 compares that the system voltage Vs is lower than the voltage threshold Vth, it outputs a low-level first signal S1. Then, the or gate 353 outputs a disable signal DIS for enabling the abnormal voltage protection mechanism to the switch 37 according to the low-level first signal S1 and the low-level second signal S2, the system voltage Vs disables power supply to the inside of the flash memory device 30, and the flash memory device 30 operates in an abnormal voltage protection state. In the present embodiment, whether the abnormal voltage protection mechanism is activated or not is determined by the voltage detection circuit 35.
Furthermore, the voltage comparator 351 is a comparator with a delay function, such as: the internal circuit of the voltage comparator 351 is provided with at least one buffer gate (buffer gate) with a delay function. When the system voltage Vs is restored from being lower than the voltage threshold Vth to being higher than the voltage threshold Vth again, the voltage detection circuit 35 executes the function of delaying the power restart through the voltage comparator 351, so that after a period of time for delaying the power restart, the first signal S1 with a high level is output to the or gate 353 after the power module 39 is discharged or the residual voltage of the power module 39 reaches the minimum allowable value, so that the or gate 353 outputs an enable signal to turn on the switch 37 and enable the system voltage Vs to supply power again. At this time. The energy storage capacity of the power module 39 has been discharged to be exhausted or the residual voltage of the power module 39 has reached the minimum allowable value, so as to ensure the success of the system restart of the flash memory device 30.
In another embodiment of the present invention, the flash memory device 30 includes a voltage detector 32, and the controller 31 is provided with a firmware 313. The controller 31 detects a voltage value of the system voltage Vs via the general-purpose input/output port 311. The firmware 313 sets at least one start condition for abnormal voltage protection, for example: in a unit time, the frequency that the system voltage Vs drifts below the voltage threshold Vth exceeds a rated frequency; alternatively, the time that the system voltage Vs is lower than the voltage threshold Vth lasts for more than a unit time.
Similarly, in this embodiment, when the host computer 10 is powered on for the first time, the voltage detection circuit 35 detects whether the system voltage Vs is higher than the voltage threshold Vth. If the system voltage Vs is lower than the voltage threshold Vth, the voltage detection circuit 35 will directly output the disable signal DIS to disable the flash memory device 30 from being turned on; on the contrary, if the system voltage Vs is higher than the voltage threshold Vth, the voltage detection circuit 35 will output the enable signal EN to allow the flash memory device 30 to be turned on. Then, after the flash memory device 30 is successfully turned on, whether the abnormal voltage protection is enabled or not is determined by the firmware 313. In other words, the firmware 313 determines whether the system voltage Vs meets the starting condition of the abnormal voltage protection.
When the system voltage Vs is lower than the voltage threshold Vth, the firmware 313 determines whether the system voltage Vs meets the start condition of the abnormal voltage protection. If the firmware 313 determines that the system voltage Vs does not meet the start condition of the abnormal voltage protection, the controller 31 continues to output the second signal S2 with a high level, and the flash memory device 30 operates in a normal state. On the contrary, when the system voltage Vs meets the start condition of the abnormal voltage protection set by the firmware 313, the controller 31 will output the second signal S2 with low level. The or gate 353 outputs a disable signal to the switch 37 according to the low-level first signal S1 and the low-level second signal S2 to enable the abnormal voltage protection, the system voltage Vs disables the power supply to the flash memory device 30, and the flash memory device 30 operates in the abnormal voltage protection state.
Therefore, the flash memory device 30 of the present invention further monitors whether the system voltage Vs is abnormal through the firmware 313 to determine whether the abnormal voltage protection mechanism is activated, which can prevent the switch 37 from switching continuously in a short time and thus reducing the operating efficiency of the flash memory device 30. Furthermore, by the arrangement of the power supply module 39, the shortfall of the transient system voltage Vs can be compensated by the discharge energy of the power supply module 39. In this way, the flash memory device 30 of the present invention does not need to start the abnormal voltage protection mechanism during a short abnormal voltage period, thereby improving the stability of the operation of the flash memory device 30. In addition, the host computer 10 of the present invention includes a control interface 11. The user may select whether the firmware 313 intervenes in the abnormal voltage protection mechanism via the operation of the control interface 11.
In addition, in an embodiment of the present invention, the power module 39 is composed of at least one energy storage device (e.g., a super capacitor). When the power module 39 receives the system voltage Vs, the power module 39 directly charges the energy storage device with the system voltage Vs and generates the output voltage Vout. Alternatively, as shown in fig. 4, in another embodiment of the present invention, the power module 39 includes a voltage booster 391, at least one energy storage device 393 and a voltage reducer 395, wherein the energy storage device 393 is connected between the voltage booster 391 and the voltage reducer 395. The booster 391 boosts the system voltage Vs to generate a first high voltage V1, charges the energy storage device 393 with the first high voltage V1, and the dropper 395 steps down the first high voltage V1 to generate the output voltage Vout. Then, the energy storage element 393 is charged by a higher voltage to increase the charging speed and the energy storage energy of the energy storage element 393.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., the present invention is intended to include all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention as described in the claims of the present invention.
Claims (22)
1. A flash memory device with abnormal power protection, comprising:
a controller;
a plurality of flash memories;
a switch for receiving a system voltage;
the power supply module is respectively connected with the controller, the flash memory and the switch and used for generating an output voltage to the controller and the flash memory; and
the voltage detection circuit is connected with the switch and used for detecting the system voltage, when the system voltage is higher than a voltage threshold value, the voltage detection circuit outputs an enabling signal to the switch to conduct the switch, the system voltage is supplied to the power module through the switch, and the power module executes a charging program through the system voltage and generates the output voltage according to the system voltage; when the system voltage is lower than the voltage threshold value, the voltage detection circuit outputs a disabling signal to the switch to disconnect the switch, the system voltage prohibits power supply to the power module, and the power module generates the output voltage by executing a discharging program;
when the system voltage returns from being lower than the voltage threshold to being higher than the voltage threshold, the voltage detection circuit outputs the enabling signal to the switch again to conduct the switch after a delay time, the system voltage supplies power to the power module again through the conducted switch, and before the voltage detection circuit outputs the enabling signal again, the power module is discharged or a residual voltage of the power module reaches a lowest allowable value.
2. The flash memory device with abnormal power protection as claimed in claim 1, wherein said voltage detection circuit has a function of delaying power restart, said function of delaying power restart being set with said delay time.
3. The flash memory device with abnormal power protection as claimed in claim 2, wherein the function of delaying power restart sets the delay time according to a storage capacity of the power module.
4. The flash memory device with abnormal power protection as claimed in claim 1, wherein the flash memory device is connected to a host computer, the system voltage is provided by the host computer, and when the system voltage returns from below the voltage threshold to above the voltage threshold and the voltage detection circuit has re-outputted the enable signal, the host computer issues a system restart command to the controller of the flash memory device to restart the system of the flash memory device.
5. The flash memory device with abnormal power protection as claimed in claim 1, wherein when the switch is turned off, the controller executes a data backup program using a discharge energy of the power module to backup at least one data into the flash memory.
6. The flash memory device with abnormal power protection as claimed in claim 1, wherein the flash memory device is connected to a host computer, the system voltage is provided by the host computer, when the host computer is powered on for the first time, if the system voltage is higher than the voltage threshold, the voltage detection circuit outputs the enable signal to the switch, and the host computer allows a boot-up procedure to be executed for the flash memory device; on the contrary, if the system voltage is lower than the voltage threshold, the voltage detection circuit outputs the disable signal to the switch, and the host computer cannot execute the boot program for the flash memory device.
7. The flash memory device with abnormal power protection of claim 1, wherein the voltage detection circuit comprises:
a voltage comparator for comparing the system voltage with the voltage threshold to determine to output a first signal with a high level or a low level; and
the OR gate comprises a first input end, a second input end and an output end, the first input end is connected with the voltage comparator, the second input end is connected with the controller, the output end is connected with the switch, the controller outputs a second signal with a high level or a low level to the OR gate, and the OR gate determines to output the enabling signal or the disabling signal according to the first signal and the second signal.
8. The flash memory device with abnormal power protection as claimed in claim 7, wherein said controller includes a general purpose input/output port, said controller being connected to the second input terminal of said or gate via said general purpose input/output port.
9. The flash memory device with abnormal power protection as claimed in claim 7, wherein the voltage comparator is a comparator with a delay function, and when the system voltage returns from below the voltage threshold to above the voltage threshold, the voltage comparator outputs the first signal with high level to the or gate after a lapse of the delay time.
10. The flash memory device of claim 1 wherein the power module comprises a voltage booster, a voltage reducer, and at least one energy storage device, the energy storage device is connected between the voltage booster and the voltage reducer, the voltage booster boosts the system voltage to generate a first high voltage, the energy storage device is charged with the first high voltage, and the voltage reducer reduces the first high voltage to generate the output voltage.
11. A flash memory device with abnormal power protection, comprising:
a controller, which is built with a firmware, and the firmware is set with at least one starting condition for abnormal voltage protection;
a plurality of flash memories;
a switch for receiving a system voltage;
the power supply module is respectively connected with the controller, the flash memory and the switch and used for generating an output voltage to the controller and the flash memory;
a voltage detector for receiving the system voltage and connecting to the controller, the controller detecting the system voltage via the voltage detector; and
a voltage detection circuit connected with the switch for detecting the system voltage, when the system voltage is higher than a voltage threshold or does not meet the starting condition of the abnormal voltage protection, the controller outputs a second signal of high level to the voltage detection circuit, the voltage detection circuit outputs an enable signal to the switch for conducting the switch, the system voltage is supplied to the power module through the switch, and the power module executes a charging program through the system voltage and generates the output voltage according to the system voltage; when the system voltage is lower than the voltage threshold and meets the starting condition of the abnormal voltage protection, the controller outputs a low-level second signal to the voltage detection circuit, the voltage detection circuit outputs a disabling signal to the switch to disconnect the switch, the system voltage prohibits power supply to the power module, and the power module generates the output voltage by executing a discharging program.
12. The flash memory device with abnormal power protection of claim 11, wherein the firmware of the controller sets the abnormal voltage protection on condition that the number of times the system voltage drifts below the voltage threshold exceeds a rated number of times per unit time.
13. The flash memory device with abnormal power protection of claim 11, wherein the firmware of the controller sets the abnormal voltage protection on condition that the system voltage is lower than the voltage threshold for a time period exceeding a unit time.
14. The flash memory device with abnormal power protection of claim 11, wherein the controller is connected to the voltage detector via a general purpose input/output port to detect the system voltage.
15. The flash memory device with abnormal power protection as claimed in claim 11, wherein when the system voltage returns from below the voltage threshold to above the voltage threshold, the voltage detection circuit outputs the enable signal to the switch again after a delay time to turn on the switch, the system voltage is re-supplied to the power module through the turned-on switch, and before the voltage detection circuit outputs the enable signal again, the power module is discharged or a residual voltage of the power module reaches a minimum allowable value.
16. The flash memory device with abnormal power protection as claimed in claim 15, wherein the voltage detection circuit has a function of delaying power restart, the function of delaying power restart being set with the delay time.
17. The flash memory device with abnormal power protection of claim 16, wherein the function of delaying the power restart sets the delay time according to the energy storage capacity of the power module.
18. The flash memory device with abnormal power protection as claimed in claim 15, wherein the flash memory device is connected to a host computer, the system voltage is provided by the host computer, and when the system voltage returns from below the voltage threshold to above the voltage threshold and the voltage detection circuit has re-outputted the enable signal, the host computer issues a system restart command to the controller of the flash memory device to restart the system of the flash memory device.
19. The flash memory device with abnormal power protection as claimed in claim 11, wherein when the switch is turned off, the controller executes a data backup program using a discharge energy of the power module to backup at least one data into the flash memory.
20. The flash memory device with abnormal power protection as claimed in claim 11, wherein the flash memory device is connected to a host computer, the system voltage is provided by the host computer, when the host computer is powered on for the first time, if the system voltage is higher than the voltage threshold, the voltage detection circuit outputs the enable signal to the switch, and the host computer allows a boot-up procedure to be executed for the flash memory device; on the contrary, if the system voltage is lower than the voltage threshold, the voltage detection circuit outputs the disable signal to the switch, and the host computer cannot execute the boot program for the flash memory device.
21. The flash memory device with abnormal power protection of claim 11, wherein the voltage detection circuit comprises:
a voltage comparator for comparing the system voltage with the voltage threshold to determine to output a first signal with a high level or a low level; and
an or gate, including a first input terminal, a second input terminal and an output terminal, the first input terminal is connected to the voltage comparator, the second input terminal is connected to the controller, the output terminal is connected to the switch, wherein the controller outputs the second signal of the high level or the low level to the or gate, and the or gate determines to output the enable signal or the disable signal according to the first signal and the second signal.
22. The flash memory device with abnormal power protection as claimed in claim 21, wherein said controller includes a general purpose input/output port, said controller being connected to the second input terminal of said or gate and the voltage detector via said general purpose input/output port.
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| JP6708762B1 (en) | 2019-01-29 | 2020-06-10 | ウィンボンド エレクトロニクス コーポレーション | Semiconductor memory device |
| CN110147333B (en) * | 2019-04-19 | 2021-09-28 | 宜鼎国际股份有限公司 | Write protection circuit |
| CN110262983B (en) * | 2019-05-24 | 2021-12-17 | 宜鼎国际股份有限公司 | Data storage device with self-destruction function |
| CN113452131A (en) * | 2020-03-25 | 2021-09-28 | 上海铼钠克数控科技股份有限公司 | Power supply management device and method of numerical control equipment |
| CN111399620B (en) * | 2020-04-24 | 2021-09-10 | 西安紫光国芯半导体有限公司 | Backup power supply and backup method |
| US20230238056A1 (en) * | 2022-01-27 | 2023-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method of manufacturing the same |
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