CN107393896B - Lead frame production method - Google Patents
Lead frame production method Download PDFInfo
- Publication number
- CN107393896B CN107393896B CN201710677287.5A CN201710677287A CN107393896B CN 107393896 B CN107393896 B CN 107393896B CN 201710677287 A CN201710677287 A CN 201710677287A CN 107393896 B CN107393896 B CN 107393896B
- Authority
- CN
- China
- Prior art keywords
- line layer
- face
- lead frame
- metal substrate
- route
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 238000005530 etching Methods 0.000 claims abstract description 43
- 230000003628 erosive effect Effects 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000004033 plastic Substances 0.000 claims abstract description 10
- 239000000945 filler Substances 0.000 claims abstract description 6
- 241000209140 Triticum Species 0.000 claims abstract description 4
- 235000021307 Triticum Nutrition 0.000 claims abstract description 4
- 235000013312 flour Nutrition 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 143
- 238000000926 separation method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 238000001746 injection moulding Methods 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000020004 porter Nutrition 0.000 description 2
- 230000029058 respiratory gaseous exchange Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49586—Insulating layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
Abstract
Lead frame production method, it is related to lead frame technology field, include the following steps: to make line layer: be designed according to the route in the first face of lead frame, in the first wheat flour of metal substrate at line layer, line layer includes interior foot line layer, wire line layer and outer foot line layer, and the width of wire line layer is smaller than the width of the width of interior foot line layer and outer foot line layer；It etches for the first time: half-etching is carried out to the first face of metal substrate, half-etching refers to non-eating thrown, the first face of metal substrate is at least extremely separated with the wire line layer by lateral erosion by the region that wire line layer covers, and is not extremely separated with the interior foot line layer and the outer foot line layer by lateral erosion by the region that interior foot line layer and outer foot line layer cover；Filler: in the first face of metal substrate, filling insulated plastic forms locating rack, is not etched part in first time etching step with the first face of positioning metal substrate；Make the second upper thread road；It is designed according to the route in the second face of lead frame, makees route in the second wheat flour of metal substrate.
Description
Technical field
The invention is related to lead frame technology field.
Background technique
Semiconductor packages is that chip (die, also known as crystal grain) is packaged into the production process of chip, in this production process
In, lead frame is one of the very important component for needing to use.
The usual very little of the size of chip, but the port with more needs and external circuit electrical connection, the i.e. end I/O
Mouthful, these ports I/O are limited to the too small size of chip, can not directly be electrically connected with external circuit, therefore, carry out to chip
When encapsulation, it is necessary to draw the port I/O of chip by lead frame, to allow after encapsulation the chip that is formed can directly and external electrical
Road electrical connection.
Existing lead frame as shown in Figure 1, include pedestal 3, interior foot 6, conducting wire 8 and outer foot 7, bonding wafer on pedestal 3,
Bonding wire realizes electrical connection between the port I/O and interior foot 6 of chip, and the port I/O and interior foot 6 correspond, interior foot 6 and outer foot
7 correspond, relative to interior foot 6 and outer foot 7 connected by conducting wire 8, outer foot 7 reconnects external circuit, to realize
The purpose that the port I/O of chip is drawn.It follows that the quantity of the interior foot 6 of lead frame determines lead frame crystalline substance applicatory
The quantity of the port I/O of piece, is limited to existing technological level, infinitely intensively, therefore the route design of lead frame can not be accomplished
Under conditions of lead frame limits size, the route that lead frame can design is less, and programmable interior 6 quantity of foot is also less, can not
It is applicable in the encapsulation of the increasing chip of I/O port number.
Summary of the invention
In view of this, the invention provides a kind of lead frame production method, it can make lead frame before comparable size
It is more to put programmable interior foot quantity, the encapsulation of the more chip of I/O port number can be applicable in.
To achieve the above object, the invention provides following technical scheme.
Lead frame production method, includes the following steps:
It makes line layer: being designed according to the route in the first face of lead frame, the phase with conductor material in the first face of metal substrate
Answer region that line layer is made, line layer includes interior foot line layer, wire line layer and outer foot line layer, the width of wire line layer
Width than the width of interior foot line layer and outer foot line layer is small；
It etches: being designed according to the route in the first face of lead frame for the first time, the corresponding region in the first face of metal substrate is carried out
Half-etching, half-etching refer to non-eating thrown, and the first face of metal substrate is at least extremely led with this by lateral erosion by the region that wire line layer covers
The separation of line line layer, and the region covered by interior foot line layer and outer foot line layer not by lateral erosion to the interior foot line layer and this
Outer foot line layer separation；
Filler: in the first face of metal substrate, filling insulated plastic forms locating rack, is existed with positioning metal substrate the first face
Part is not etched in first time etching step；
Make the second upper thread road；It is designed according to the route in the second face of lead frame, makees lead frame in the second wheat flour of metal substrate
The route in the second face；
First face and the second face are opposite two sides, are the erosion of not circuit etching layer to the mode that metal substrate is etched
Quarter mode.
This is technical solution 1.
In technical solution 1, foot line layer, wire line layer and outer foot line layer etc. in the one side of metal substrate first makes
Then line layer etches the face of metal substrate, width and outer payment to a porter road because of the width of wire line floor than interior foot line layer
The width of layer is small, therefore can reach region that metal substrate is covered by wire line layer by complete lateral erosion, i.e., with the wire line
Layer is detached from, and the region covered by interior foot line layer and outer foot line layer is by complete lateral erosion, i.e., not with the interior foot line layer and
The outer foot line layer is detached from, and is partially respectively interior by being not etched for region that interior foot line layer and outer foot line layer cover
Foot and outer foot, by hollow out, wire line layer forms the same structure of bridge in the region that the original of metal substrate is covered by wire line layer,
Its region electrical separation being entirely covered with metal substrate original, thus to be made in the corresponding region of metal substrate another side
Route has manufactured condition, in this way, can make Double-side line, therefore same using the lead frame production method of the invention
Programmable interior foot is more under the premise of equidimension, can be applicable in the encapsulation of the more chips of I/O port number.
Lead frame production method according to technical solution 1 makes in line layer step, according to the second face of lead frame
Route design, while line layer is made in the corresponding region with conductor material in the second face of metal substrate, which also includes interior
Foot line layer, wire line layer and outer foot line layer；
The second face course step is made to include the following steps:
Second of etching: designing according to the route in the second face of lead frame, carries out to the corresponding region in the second face of metal substrate
Etching, forms the interior foot and outer foot of mutual electrical separation, the region that the second face of metal substrate is covered by wire line layer is extremely
It is few by lateral erosion to the region for separating with the wire line layer, and being covered by interior foot line layer and outer foot line layer not by lateral erosion to
The interior foot line layer is separated with the outer foot line layer.
This is technical solution 2.
In technical solution 2, made when making the second upper thread road of method identical with the first upper thread road of production, this is
A kind of selection.
Lead frame production method according to technical solution 1, the second face course step of production include the following steps:
It makes etch protection layer: being designed according to the route in the second face of lead frame, the corresponding region in the second face of metal substrate
Make etch protection layer；
Second of etching: being etched the second face of metal substrate, will not be etched the region eating thrown of protective layer covering, and obtain
To the route in the second face of lead frame.
This is technical solution 3.
In technical solution 3, the route in the second face is made by the way of forming route of traditional etching metal substrate,
This is another selection.
The lead frame production method according to technical solution 1 or 2 makes line layer using electroplating technology.Electroplating technology
For common technique, technology maturation is reliable and stable, and cost is also relatively low.This is technical solution 4.
According to lead frame production method described in technical solution 4, metal substrate is lost by the way of alkali etching
It carves.Alkali etching is the etching mode that one of which will not injure electroplated layer.This is technical solution 5.
Lead frame production method according to technical solution 1, locating rack is by epoxy resin injection molding.This is technical side
Case 6.
The thickness of the lead frame production method according to technical solution 1 or 2, line layer is greater than 12.5 μm.In this way these
Line layer comparatively robust, it is not easy to be damaged in process of production.This is technical solution 7.
Lead frame production method according to technical solution 1, in first time etching step, the depth of half-etching is more than gold
Belong to the half of substrate thickness.The thickness of the locating rack formed below in this way is thicker, can preferably play positioning conducive to locating rack
Effect, manufactured lead frame are firmer.This is technical solution 8.
Lead frame production method according to technical solution 1, the coefficient of thermal expansion of the insulated plastic and metal substrate
Coefficient of thermal expansion matches.Match and refer to that the coefficient of thermal expansion of insulated plastic is close with the coefficient of thermal expansion of metal substrate, so that in ring
When the temperature change of border, the breathing amount of locating rack and the breathing amount of the metal part of lead frame are close, to prevent lead frame rear
It is deformed in continuous processing procedure, and locating rack damages the other component of lead frame in temperature change.The landform of different regions is gentle
Wait different, working environment is also not quite similar, therefore the selection suitable dielectric plastic material of coefficient of thermal expansion comes according to the actual situation
The temperature difference is biggish in production locating rack, such as actual working environment, then the coefficient of thermal expansion of dielectric plastic material is closer to Metal Substrate
The coefficient of thermal expansion of plate, the temperature difference is lesser in actual working environment, then the coefficient of thermal expansion of dielectric plastic material can be approached less
The coefficient of thermal expansion of metal substrate.This is technical solution 9.
The width of the lead frame production method according to technical solution 1 or 2, wire line layer is less than metal substrate thickness
0.8 times, the width of the width of interior foot line layer and outer foot line layer is all larger than 0.8 times of metal substrate thickness.This is technology
Scheme 10.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing lead frame；
Fig. 2 is the first face schematic diagram of the lead frame made of the lead frame production method of the invention；
Fig. 3 is the second face schematic diagram of the lead frame made of the lead frame production method of the invention；
Fig. 4 is the process schematic of the lead frame production method of the invention by taking Section A-A in Fig. 2 as an example；
Fig. 5 is the enlarged diagram in Fig. 2 at B.
Appended drawing reference includes:
Metal substrate 1, interior foot line layer 21, outer foot line layer 22, wire line layer 23, pedestal 3, protective film 4, locating rack
5, interior foot 6, outer foot 7, conducting wire 8.
Specific embodiment
It elaborates below in conjunction with specific embodiment to the invention.
In conjunction with Fig. 2 and Fig. 3, the lead frame made of the lead frame production method of the invention, tow sides have
There is route, the quantity of interior foot 6 (being blocked by interior foot line layer 21) almost can be than the interior foot of existing lead frame shown in fig. 1
6 quantity have more one times.It elaborates below in conjunction with lead frame production method of the Fig. 4 to the invention.
In conjunction with Fig. 2-4, the production method is as follows described for the lead frame of the invention.
Firstly, carrying out line transitions, line layer is made.As shown in fig. 4 a, in conjunction with Fig. 2 and Fig. 3, according to the first face of lead frame
It is designed with the route in the second face, interior payment to a porter is made in 1 first face of metal substrate and the second face corresponding region respectively with conductor material
The line layers such as road floor 21, wire line floor 23 and outer foot line layer 22 may include in other embodiments other kinds of line
Road floor, can also lack the line layer of the above-mentioned type, and interior foot line layer 21 and outer foot line layer 22 are respectively overlay in metal substrate 1
It is designed to the region of foot 6 and outer foot 7 in lead frame.As shown in Fig. 2, Fig. 3 and Fig. 5, in the width W3 ratio of wire line layer 23
The width W2 of the width W1 of foot line layer 21 and outer foot line layer 22 is small.In the present embodiment, route is made using electroplating technology
Layer, the line layers such as interior foot line layer 21, wire line layer 23 and outer foot line layer 22 are the electroplated layer that plating is formed, and will
Also plating forms one layer of electroplated layer together in pedestal 3 region.The mode of production line layer is not limited to be electroplated, in other embodiments,
Other technology modes can be used to make.Pedestal 3 is not necessarily, not essential, wants depending on actual conditions, such as heat dissipation
Not high product is sought, pedestal 3 can not be designed, can be realized highly denser in the region designed lines of bottom surface original design pedestal 3 in this way
Degree.The present embodiment is illustrated with there is the case where pedestal 3.In the present embodiment, the plating thickness of formation is electroplated, and to be all larger than 12.5 micro-
Rice, the i.e. thickness of line layer are greater than 12.5 microns, such comparatively robust, in subsequent washing, production locating rack 5 and other processing procedures
In be not easy to be damaged.
Then, first time etching is carried out.As shown in Figure 4 b, it is designed according to the route in the first face of lead frame, to metal substrate 1
Positive corresponding region is etched, and before this, layer protecting film 4 need to be sticked in 1 reverse side of metal substrate, to protect Metal Substrate
1 reverse side of plate is not etched in this etching process.It should be noted that the object etched during production lead frame is metal
Substrate 1, it is therefore necessary to the etching mode of line layer will not be etched by selecting, the present embodiment using electroplating technology formation electroplated layer come
Above-mentioned each line layer is served as, therefore the present embodiment etches metal substrate 1 by the way of alkali etching.Just to metal substrate 1
Face is etched to half-etching, and half-etching refers to non-eating thrown, and in the present embodiment, the etch depth of the secondary half-etching is that metal substrate 1 is thick
More than half of degree.The degree of etching should also conform to: 1 front of metal substrate is at least eclipsed by the region that wire line layer 23 covers
Carve to the region that separates with the wire line layer 23, and covered by interior foot line layer 21 and outer foot line layer 22 not by lateral erosion to
The interior foot line layer 21 and the outer foot line layer 22 separate.As shown in Figure 4 b, 1 front of metal substrate is former is covered by wire line layer 23
By hollow out, wire line layer 23 forms the same structure of bridge in the region of lid, and the region being entirely covered with 1 original of metal substrate is electrical
Separation so just creates condition to make route in the corresponding region of 1 reverse side of metal substrate, as long as designing outside interior foot 6
The position of foot 7, and pass through each interior foot 6 of etching electrical separation, outer foot 7 and conducting wire.
Then, filler makes locating rack 5.As illustrated in fig. 4 c, it is formed and is positioned in 1 filling of groove front insulated plastic of metal substrate
Frame 5 is not etched part in first time etching step so that positioning metal substrate 1 is positive.In the present embodiment, locating rack 5
By epoxy resin injection molding.In order to protect each line layer, locating rack 5 can coat each line layer wherein.
Then, second is carried out to etch.As shown in figure 4d, it is designed according to the route in the second face of lead frame, to metal substrate 1
The corresponding region of reverse side is etched, and the degree of etching is the interior foot 6 and outer foot 7 for forming mutual electrical separation, and metal
1 second face of substrate is at least extremely separated with the wire line layer 23 by lateral erosion by the region that wire line layer 23 covers, and by interior foot
The region of line layer 21 and the covering of outer foot line layer 22 is not extremely divided with the interior foot line layer 21 and the outer foot line layer 22 by lateral erosion
From.It is identical as to the positive etching of metal substrate 1, it is the same that bridge is also formed in the wire line layer 23 of 1 reverse side of metal substrate
Structure can so allow the design of reverse side route can be more flexible.
Then, as shown in fig 4e, in 1 reverse side filler of metal substrate, locating rack 5 is extended into lead frame entirety, equally, is
Each line layer of protection 1 reverse side of metal substrate, locating rack 5 also all coat each line layer of 1 reverse side of metal substrate wherein.This
Step filler is also by epoxy resin injection molding.However, the production of locating rack 5 is not limited to and uses epoxy resin injection molding,
Other modes production can also be used, such as press dry film state green oil etc..After locating rack 5 is made, if wherein by each line layer cladding
, then need to remove the part for being covered on interior foot line layer 21 and outer foot line layer 22, to expose interior foot line layer 21 and outer foot
Line layer 22 comes bonding wire or scolding tin etc..
So far, the lead frame production method of the invention is basically completed.
In the present embodiment, the route of lead frame reverse side is also made of production method identical with front route,
In other embodiments, other modes can be used to make reverse side route, for example, obtaining line using traditional etching metal substrate 1
The mode on road makes, and slightly illustrates below.
The reverse side route of lead frame is made specifically, elder generation in such a way that traditional etching metal substrate 1 obtains route
Line transitions are carried out by exposure development, are designed according to the route of lead frame reverse side, etching protection is made in 1 reverse side of metal substrate
Layer, is then etched 1 reverse side of metal substrate, obtains the route of lead frame reverse side.Make lead frame in this way
Reverse side route, it should be noted that the conducting wire 8 of design reverse side avoids interior foot 6 and outer foot 7, in order to avoid short-circuit.
The mode of production route can be used with flexibly, in the route production of the same face, can be used and make on metallic substrates
The mode of line layer makes a part of route, makes another part route by the way of traditional etching metal substrate, still,
Using the region of traditional etching metal substrate manufacture route, the route in another side region corresponding with the region must be adopted
It is made of the mode of production line layer, can just accomplish that the route on two sides is not short-circuit in this way.Such as it is long for conductor length
Route design hanged if making route only with the mode of production line layer since wire line layer is formed after the etching
The same structure of empty bridge, too long length are easy disconnected, and such case, which just can be used, above-mentioned uses above two production route with
Mode makes route, a conducting wire is divided into two sections of even more multistages, each section lead staggeredly uses above two production route
Mode make, that is, can avoid that wire line layer is too long to be easy disconnected problem.
Finally it should be noted that above embodiments are only to illustrate the technical solution of the invention, rather than to this hair
It is bright create protection scope limitation, although being explained in detail referring to preferred embodiment to the invention, this field it is general
Lead to it will be appreciated by the skilled person that can be modified or replaced equivalently to the technical solution of the invention, without departing from this
The spirit and scope of innovation and creation technical solution.
Claims (10)
1. lead frame production method, characterized in that include the following steps:
Make line layer: according to the route in the first face of lead frame design, with conductor material the first face of metal substrate respective area
Domain is made line layer, and line layer includes interior foot line layer, wire line layer and outer foot line layer, in the width ratio of wire line layer
The width of the width of foot line layer and outer foot line layer is small；
It etches: being designed according to the route in the first face of lead frame for the first time, half is carried out to the corresponding region in the first face of metal substrate and is lost
Carve, half-etching refers to non-eating thrown, the region that the first face of metal substrate is covered by wire line layer at least by lateral erosion to the wire
The separation of road floor, and the region covered by interior foot line layer and outer foot line layer not by lateral erosion to the interior foot line layer and the outer foot
Line layer separation；
Filler: in the first face of metal substrate, filling insulated plastic forms locating rack, with the first face of positioning metal substrate first
Part is not etched in secondary etching step；
It makes the second upper thread road: being designed according to the route in the second face of lead frame, make lead frame second in the second wheat flour of metal substrate
The route in face；
First face and the second face are opposite two sides, are the etching side of not circuit etching layer to the mode that metal substrate is etched
Formula.
2. lead frame production method according to claim 1, characterized in that
It makes in line layer step, is designed according to the route in the second face of lead frame, while with conductor material in metal substrate second
Line layer is made in the corresponding region in face, which also includes interior foot line layer, wire line layer and outer foot line layer；
The second face course step is made to include the following steps:
Second of etching: designing according to the route in the second face of lead frame, be etched to the corresponding region in the second face of metal substrate,
The interior foot and outer foot of mutual electrical separation are formed, the region that the second face of metal substrate is covered by wire line layer is at least by side
Erosion to being separated with the wire line layer, and the region covered by interior foot line layer and outer foot line layer not by lateral erosion to the interior foot
Line layer is separated with the outer foot line layer.
3. lead frame production method according to claim 1, characterized in that the second face course step of production includes following step
It is rapid:
It makes etch protection layer: being designed according to the route in the second face of lead frame, the corresponding region in the second face of metal substrate makes
Etch protection layer；
Second of etching: being etched the second face of metal substrate, will not be etched the region eating thrown of protective layer covering, and be drawn
The route in the second face of wire frame.
4. lead frame production method according to claim 1 or 2, characterized in that make line layer using electroplating technology.
5. lead frame production method according to claim 4, characterized in that metal substrate by the way of alkali etching
It is etched.
6. lead frame production method according to claim 1, characterized in that locating rack is by epoxy resin injection molding.
7. lead frame production method according to claim 1 or 2, characterized in that the thickness of line layer is greater than 12.5 μm.
8. lead frame production method according to claim 1, characterized in that in first time etching step, the depth of half-etching
Degree is 2/5 or more of metal substrate thickness.
9. lead frame production method according to claim 1, characterized in that the coefficient of thermal expansion and metal of the insulated plastic
The coefficient of thermal expansion of substrate matches.
10. lead frame production method according to claim 1 or 2, characterized in that the width of wire line layer is less than metal
The width of 0.8 times of substrate thickness, the width of interior foot line layer and outer foot line layer is greatly at least than the width of wire line layer
50μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710677287.5A CN107393896B (en) | 2017-08-09 | 2017-08-09 | Lead frame production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710677287.5A CN107393896B (en) | 2017-08-09 | 2017-08-09 | Lead frame production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107393896A CN107393896A (en) | 2017-11-24 |
| CN107393896B true CN107393896B (en) | 2019-08-23 |
Family
ID=60354873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710677287.5A Active CN107393896B (en) | 2017-08-09 | 2017-08-09 | Lead frame production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393896B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393896B (en) * | 2017-08-09 | 2019-08-23 | 林英洪 | Lead frame production method |
| CN107546316B (en) * | 2017-08-22 | 2020-03-13 | 丁文兰 | Preparation method of toughened transparent conductive glass substrate and intelligent building glass |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490870A (en) * | 2002-09-17 | 2004-04-21 | �¹������ҵ��ʽ���� | Lead frame and producing method thereof, semiconductor device therefrom |
| CN1528014A (en) * | 2001-06-08 | 2004-09-08 | 英特尔公司 | Chip lead frames |
| US7153724B1 (en) * | 2003-08-08 | 2006-12-26 | Ns Electronics Bangkok (1993) Ltd. | Method of fabricating no-lead package for semiconductor die with half-etched leadframe |
| CN101097900A (en) * | 2006-06-26 | 2008-01-02 | 张仪玲 | Conducting wire frame and method for producing same |
| CN102324412A (en) * | 2011-09-13 | 2012-01-18 | 江苏长电科技股份有限公司 | Island-free lead frame structure prefilled with plastic encapsulating material, plated firstly and etched later and production method thereof |
| CN103050451A (en) * | 2012-12-17 | 2013-04-17 | 华天科技（西安）有限公司 | Double-row pin quad flat no lead packaging piece and insulating treatment method thereof |
| CN103094241A (en) * | 2012-12-15 | 2013-05-08 | 华天科技（西安）有限公司 | Re-wiring lead frame FCAAQFN package part and manufacture process thereof |
| CN107393896A (en) * | 2017-08-09 | 2017-11-24 | 林英洪 | Lead frame preparation method |
-
2017
- 2017-08-09 CN CN201710677287.5A patent/CN107393896B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1528014A (en) * | 2001-06-08 | 2004-09-08 | 英特尔公司 | Chip lead frames |
| CN1490870A (en) * | 2002-09-17 | 2004-04-21 | �¹������ҵ��ʽ���� | Lead frame and producing method thereof, semiconductor device therefrom |
| US7153724B1 (en) * | 2003-08-08 | 2006-12-26 | Ns Electronics Bangkok (1993) Ltd. | Method of fabricating no-lead package for semiconductor die with half-etched leadframe |
| CN101097900A (en) * | 2006-06-26 | 2008-01-02 | 张仪玲 | Conducting wire frame and method for producing same |
| CN102324412A (en) * | 2011-09-13 | 2012-01-18 | 江苏长电科技股份有限公司 | Island-free lead frame structure prefilled with plastic encapsulating material, plated firstly and etched later and production method thereof |
| CN102324412B (en) * | 2011-09-13 | 2013-03-06 | 江苏长电科技股份有限公司 | Island-free lead frame structure prefilled with plastic encapsulating material, plated firstly and etched later and production method thereof |
| CN103094241A (en) * | 2012-12-15 | 2013-05-08 | 华天科技（西安）有限公司 | Re-wiring lead frame FCAAQFN package part and manufacture process thereof |
| CN103050451A (en) * | 2012-12-17 | 2013-04-17 | 华天科技（西安）有限公司 | Double-row pin quad flat no lead packaging piece and insulating treatment method thereof |
| CN107393896A (en) * | 2017-08-09 | 2017-11-24 | 林英洪 | Lead frame preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107393896A (en) | 2017-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102931161B (en) | Semiconductor package assembly and a manufacturing method thereof | |
| TWI377658B (en) | Integrated circuit package system with leadframe array | |
| US8274133B2 (en) | Semiconductor package and method for making the same | |
| US11908779B2 (en) | Land structure for semiconductor package and method therefor | |
| US20050146057A1 (en) | Micro lead frame package having transparent encapsulant | |
| KR20010004562A (en) | chip size stack package and method of fabricating the same | |
| US11031356B2 (en) | Semiconductor package structure for improving die warpage and manufacturing method thereof | |
| US11233020B2 (en) | Semiconductor package device and method of manufacturing the same | |
| CN104319269B (en) | Multistage lead frame | |
| US10636735B2 (en) | Package structure and the method to fabricate thereof | |
| CN107393896B (en) | Lead frame production method | |
| CN106876363A (en) | The fan-out package structure and its process of 3D connections | |
| CN104867865B (en) | A kind of wafer three-dimensional integration lead technique | |
| CN104517905B (en) | Metal redistribution layer for mold substrate | |
| CN106128965A (en) | A kind of manufacture method of device without substrate package | |
| US9293398B2 (en) | Land structure for semiconductor package and method therefor | |
| CN105304575A (en) | Packaging structure adopting cushion block to prevent inclination of fingerprint sensing chip and manufacturing method | |
| US20200194349A1 (en) | Semiconductor package having a semiconductor die on a plated conductive layer | |
| CN104766855B (en) | Chip apparatus and its manufacturing method | |
| CN108511473B (en) | Interconnection process for metal layers between wafers | |
| US7456053B2 (en) | Packaging method for segregating die paddles of a leadframe | |
| CN206293435U (en) | Semiconductor devices and semiconductor package part | |
| CN206558504U (en) | Imaging sensor module | |
| TW200913088A (en) | Method for fabricating multi-chip stacked package | |
| CN208336207U (en) | A kind of biradical island lead frame frame and its SOT33-5L packaging part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231127 Address after: Room 410, Building 1, No. 29 Guangming Road, Dongcheng Street, Dongguan City, Guangdong Province, 523000 Patentee after: Yingtong Micro Innovation Technology (Dongguan) Co.,Ltd. Address before: 523000 Changxian Apartment 502, Xiagang Village, Chang'an Town, Dongguan City, Guangdong Province Patentee before: Lin Yinghong |