CN107385509A - Polycrystalline silicon ingot casting and ingot single crystal crucible - Google Patents
Polycrystalline silicon ingot casting and ingot single crystal crucible Download PDFInfo
- Publication number
- CN107385509A CN107385509A CN201710604037.9A CN201710604037A CN107385509A CN 107385509 A CN107385509 A CN 107385509A CN 201710604037 A CN201710604037 A CN 201710604037A CN 107385509 A CN107385509 A CN 107385509A
- Authority
- CN
- China
- Prior art keywords
- side wall
- crucible
- ingot
- single crystal
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Embodiment of the present invention discloses a kind of polycrystalline silicon ingot casting and ingot single crystal crucible, belong to the technical scheme in polycrystalline silicon ingot casting and ingot single crystal field, its core is that the polycrystalline silicon ingot casting and ingot single crystal with crucible are octagonal crucible, different from usually used square crucible, and the form behind the angle of four ends is cut off similar to square crucible.Described octagonal crucible, due to reducing cornerwise length so that the crucible of more volume or size can be put down in ingot furnace spherical hearth, coordinate in ingot furnace after thermal field transformation accordingly, it can be achieved to improve charge, improve production capacity, lower the purpose of energy consumption；Crucible end angle is plane, can arrange end face thermal field, to the heating inside crucible apart from it is shorter evenly；The crucible avoid ingot single crystal technique end angle into it is brilliant difficult the problem of, improve monocrystalline crystal forming rate.
Description
Technical field
The present invention relates to a kind of technology of field of polycrystalline silicon ingot, more particularly to a kind of polycrystalline silicon ingot casting and ingot single crystal are used
Crucible.
Background technology
The container of silicon material is contained when quartz ceramic crucible is as polycrystalline silicon ingot casting, is complemented each other with photovoltaic silicon ingot casting technology,
Critical material when being photovoltaic polycrystalline silicon ingot casting.Due to the specification requirement of solar cell module, square crucible is favorably improved
Silicon chip utilization rate after ingot casting, its shape are unchanged so far from scale application is started.
But photovoltaic polycrystalline silicon ingot casting, as a kind of hi-tech industry, technology innovation speed is more and more faster, main at present
There are two kinds of technological trends：First, polycrystalline silicon ingot casting list stove charge is increasing, first, ingot single crystal technology is expected to improve casting
Ingot product quality, optimize terminal conversion efficiency.
Applied since 2007 G4 ingot casting technologies, develop into current G6 ingot casting technologies, and the ingot casting skill such as G7, G8
Art has also started volume production, tried out respectively in the industry, and polysilicon list stove charge is increasing, ingot casting side's ingot is increasing
As development trend.Every 2 to 3 years, silicon ingot casting technology will upgrade.In the prior art, crucible is positioned over ingot furnace
Interior, because the profile of crucible is rectangle, and ingot furnace burner hearth is circle, although thermal field, system, technical requirements after technology upgrading
It is basically identical, but because space is different from size requirement, it is meant that the raw and auxiliary material such as original equipment and crucible all needs renewal to change
It is generation, and polycrystalline silicon ingot or purifying furnace easily more than million, directly discarded to bring the very big wasting of resources.
On the other hand, ingot single crystal is considered as the photovoltaic silicon ingot casting technology for most having technological competitiveness always, wherein crucial
One of technological difficulties be that end angle into brilliant difficult.Because ingot casting uses square crucible, temperature is relatively low at the angle of ingot casting thermal field end
It is uneven, therefore defect is easily formed, essentially polycrystalline, these parts most go out of use at last, are to influence ingot single crystal Technique Popularizing
One of major reason.
The content of the invention
It is an object of the invention to provide a kind of polycrystalline silicon ingot casting and ingot single crystal crucible, to solve partial polysilicon casting
Ingot furnace system technology upgrading cost it is too high with it is into brilliant difficult at the angle of ingot single crystal end the problem of.
In order to solve the above-mentioned technical problem, it is described the invention provides a kind of polycrystalline silicon ingot casting and ingot single crystal crucible
Polycrystalline silicon ingot casting and ingot single crystal are side wall with four sides of crucible, four of the polycrystalline silicon ingot casting and ingot single crystal crucible
It is transition wall to hold angle, and the adjacent side wall is mutually perpendicular to, and the adjacent side wall is connected with the same transition wall,
The side wall and the transition wall surround octagon.
Wherein, four side walls are respectively the first side wall, second sidewall, the 3rd side wall and the 4th side wall；Described first
Side wall and the 3rd side wall are positioned opposite, and the second sidewall and the 4th side wall are positioned opposite；The first side wall arrives
The vertical range of the second sidewall is 5~420cm, the vertical range of the second sidewall to the first side wall for 5~
420cm。
Wherein, the vertical range of the second sidewall to the 3rd side wall is 5~420cm, the 3rd side wall to institute
The vertical range for stating second sidewall is 5~420cm.
Wherein, the vertical range of the 3rd side wall to the 4th side wall is 5~420cm, the 4th side wall to institute
The vertical range for stating the 3rd side wall is 5~420cm.
Wherein, the 4th side wall to the vertical range of the first side wall be 5~420cm, the first side wall to institute
The vertical range for stating the 4th side wall is 5~420cm.
Wherein, vertical range, the second sidewall to the first side wall of the first side wall to the second sidewall
Vertical range, the 3rd side wall to the second sidewall to the 3rd side wall of vertical range, the second sidewall
Vertical range, the vertical range of the 3rd side wall to the 4th side wall, the 4th side wall to the 3rd side wall hang down
Straight distance, the vertical range of the 4th side wall to the first side wall, the first side wall are vertical to the 4th side wall
Apart from equal.
Beneficial effects of the present invention are as follows：
Because the side wall and the transition wall surround octagon, i.e. polycrystalline silicon ingot casting and ingot single crystal is anistree with crucible
Shape crucible, reduce cornerwise length so that the crucible of more volume or size can be put down in ingot furnace spherical hearth,
Coordinate in ingot furnace after thermal field transformation accordingly, it is achievable to improve charge, production capacity is improved, lowers the purpose of energy consumption；In addition, by
Be octagon in crucible, so crucible end angle is plane, end face thermal field can be arranged, to the heating inside crucible apart from it is shorter more
Uniformly, avoid ingot single crystal technique end angle into it is brilliant difficult the problem of, improve monocrystalline crystal forming rate.
Brief description of the drawings
In order to illustrate more clearly of technical scheme, the required accompanying drawing used in embodiment will be made below
Simply introduce, it should be apparent that, drawings in the following description are only some embodiments of the present invention, general for this area
For logical technical staff, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
The structural representation that Fig. 1 is polycrystalline silicon ingot casting of the present invention and ingot single crystal crucible preferred embodiment provides；
The sizing figure that Fig. 2 is polycrystalline silicon ingot casting of the present invention and ingot single crystal crucible preferred embodiment provides；
The G7 type structural representations that Fig. 3 is polycrystalline silicon ingot casting of the present invention and ingot single crystal crucible preferred embodiment provides
Figure；
The G8 type structural representations that Fig. 4 is polycrystalline silicon ingot casting of the present invention and ingot single crystal crucible preferred embodiment provides
Figure.
Reference is as follows：
11st, the first side wall；12nd, second sidewall；13rd, the 3rd side wall；14th, the 4th side wall；
21st, First Transition wall；22nd, the second transition wall；23rd, the 3rd transition wall；24th, the 4th transition wall；
H1, the first lateral separation；H2, the second lateral separation；H3, the 3rd lateral separation；H4, the 4th lateral separation；
S1, the first vertical distance；S2, the second vertical distance；S3, the 3rd vertical distance；S4, the 4th vertical distance；
(3A, 3B), polycrystalline silicon ingot casting and ingot single crystal crucible.
Embodiment
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is carried out clear
Chu, it is fully described by.
It was found from Fig. 1 and 2, polycrystalline silicon ingot casting described in embodiment of the present invention and ingot single crystal are side with four sides of crucible
Wall, the polycrystalline silicon ingot casting and ingot single crystal are transition wall with four ends angle of crucible, and the adjacent side wall is mutually perpendicular to,
The adjacent side wall is connected with the same transition wall, and the side wall and the transition wall surround octagon.
In the prior art, crucible is positioned in ingot furnace, because the profile of crucible is substantially rectangular, so ingot furnace
Inside is also substantially rectangular, so as to both Matching installations；Compared with prior art, the polysilicon casting described in embodiment of the present invention
Ingot and ingot single crystal are changed to octagon with crucible, that is, are equal on the basis of existing crucible and cut off four ends angle, reduce and account for
With space so that free space increase inside ingot furnace, to retain ingot furnace, inside ingot furnace setting up part is upgraded
Transformation, avoids changing a whole set of polycrystalline silicon ingot casting system, greatly reduces manufacturing cost.
Further, since crucible is octagon, so crucible end angle is plane, end face thermal field can be arranged, to crucible inside
Heating apart from it is shorter evenly, avoid ingot single crystal technique end angle into it is brilliant difficult the problem of, improve monocrystalline crystal forming rate.
A kind of improve of polycrystalline silicon ingot casting and ingot single crystal crucible described in embodiment of the present invention can be such as Fig. 1 and 2 institutes
Show, four side walls are respectively the first side wall 11, second sidewall 12, the 3rd side wall 13 and the 4th side wall 14；First side
Wall 11 and the 3rd side wall 13 are positioned opposite, and the second sidewall 12 and the 4th side wall 14 are positioned opposite；Described first
The vertical range of side wall 11 to the second sidewall 12 is 5~420cm, and the second sidewall 12 to the first side wall 11 is hung down
Straight distance is 5~420cm.
Using direction shown in Fig. 1 as reference, upside is the first side wall 11, and right side is second sidewall 12, and downside is the 3rd side wall
13, there is the 4th side wall 14 in left side；The upper right corner is First Transition wall 21, the both sides of First Transition wall 21 respectively with the first side wall 11,
Second sidewall 12 connects；The lower right corner is the second transition wall 22, the both sides of the second transition wall 22 respectively with second sidewall 12, the 3rd side
Wall 13 connects；The lower left corner is the 3rd transition wall 23, and the both sides of the 3rd transition wall 23 connect with the 3rd side wall 13, the 4th side wall 14 respectively
Connect；The upper left corner is the 4th transition wall 24, and the both sides of the 4th transition wall 24 are connected with the 4th side wall 14, the first side wall 11 respectively.
Wherein as shown in Fig. 2 the vertical range of the first side wall 11 to second sidewall 12 is 5~420cm, refer to the first side wall
11 right sides be 5~420cm to the vertical ranges of second sidewalls 12, define this apart from being the first lateral separation H1, second sidewall 12
Vertical range to the first side wall 11 is 5~420cm, refers to that the vertical range that the first side wall 11 is arrived in the upside of second sidewall 12 is 5
~420cm, this distance is defined as the first vertical distance S1；It is real by adjusting the vertically distance S1 of the first lateral separation H1 and first
Matter is equal to regulation polycrystalline silicon ingot casting and the free space at ingot single crystal crucible upper right side angle, as long as free space regulation is closed
It is suitable, just can guarantee that ingot furnace internally can have enough transformation spaces in upper right side angle, also avoid excessively increasing free space and
Reduce the inside free space of polycrystalline silicon ingot casting and ingot single crystal crucible.
Especially, as the first lateral separation H1 and first, vertically distance S1 is set as 350.0cm-370cm, 350.0cm-
During 370cm, more preferably, more conducively ingot casting improves monocrystalline crystal forming rate to its application effect；When being set as 9-17cm, it is more beneficial for improving dress
Doses, production capacity is improved, lower energy consumption.
A kind of improve of polycrystalline silicon ingot casting and ingot single crystal crucible described in embodiment of the present invention can be such as Fig. 1 and 2 institutes
Show, the second sidewall 12 to the vertical range of the 3rd side wall 13 be 5~420cm, and the 3rd side wall 13 arrives described the
The vertical range of two side walls 12 is 5~420cm.
Wherein as shown in Fig. 2 the vertical range of second sidewall 12 to the 3rd side wall 13 is 5~420cm, refer to second sidewall
12 downsides be 5~420cm to the vertical ranges of the 3rd side walls 13, and it is the second vertical distance S2 to define this distance, the 3rd side wall 13
Vertical range to second sidewall 12 is 5~420cm, refers to that the vertical range that second sidewall 12 is arrived on the right side of the 3rd side wall 13 is 5
~420cm, it is the second lateral separation H2 to define this distance；It is real by adjusting the vertically distance S2 of the second lateral separation H2 and second
Matter is equal to regulation polycrystalline silicon ingot casting and the free space at ingot single crystal crucible bottom righthand side angle, as long as free space regulation is closed
It is suitable, just can guarantee that ingot furnace internally can have enough transformation spaces in bottom righthand side angle, also avoid excessively increasing free space and
Reduce the inside free space of polycrystalline silicon ingot casting and ingot single crystal crucible.
Especially, as the second lateral separation H2 and second, vertically distance S2 is set as 350.0cm-370cm, 350.0cm-
During 370cm, more preferably, more conducively ingot casting improves monocrystalline crystal forming rate to its application effect；When being set as 9-17cm, it is more beneficial for improving dress
Doses, production capacity is improved, lower energy consumption.
A kind of improve of polycrystalline silicon ingot casting and ingot single crystal crucible described in embodiment of the present invention can be such as Fig. 1 and 2 institutes
Show, the 3rd side wall 13 to the vertical range of the 4th side wall 14 be 5~420cm, and the 4th side wall 14 arrives described the
The vertical range of three side walls 13 is 5~420cm.
Wherein as shown in Fig. 2 the vertical range of the 3rd side wall 13 to the 4th side wall 14 is 5~420cm, refer to the 3rd side wall
13 left sides be 5~420cm to the vertical ranges of the 4th side walls 14, define this apart from being the 3rd lateral separation H3, the 4th side wall 14
Vertical range to the 3rd side wall 13 is 5~420cm, refers to that the vertical range on the downside of the 4th side wall 14 to the 3rd side wall 13 is 5
~420cm, this distance is defined as the 3rd vertical distance S3；It is real by adjusting the vertically distance S3 of the 3rd lateral separation H3 and the 3rd
Matter is equal to regulation polycrystalline silicon ingot casting and the free space at ingot single crystal crucible lower-left end angle, as long as free space regulation is closed
It is suitable, just can guarantee that ingot furnace internally can have enough transformation spaces in lower-left end angle, also avoid excessively increasing free space and
Reduce the inside free space of polycrystalline silicon ingot casting and ingot single crystal crucible.
Especially, as the 3rd lateral separation H3 and the 3rd, vertically distance S3 is set as 350.0cm-370cm, 350.0cm-
During 370cm, more preferably, more conducively ingot casting improves monocrystalline crystal forming rate to its application effect；When being set as 9-17cm, it is more beneficial for improving dress
Doses, production capacity is improved, lower energy consumption.
A kind of improve of polycrystalline silicon ingot casting and ingot single crystal crucible described in embodiment of the present invention can be such as Fig. 1 and 2 institutes
Show, the 4th side wall 14 to the vertical range of the first side wall 11 be 5~420cm, and the first side wall 11 arrives described the
The vertical range of four side walls 14 is 5~420cm.
Wherein as shown in Fig. 2 the vertical range of the 4th side wall 14 to the first side wall 11 is 5~420cm, refer to the 4th side wall
14 upsides be 5~420cm to the vertical ranges of the first side walls 11, and it is the 4th vertical distance S4 to define this distance, the first side wall 11
Vertical range to the 4th side wall 14 is 5~420cm, refers to that the vertical range on the left of the first side wall 11 to the 4th side wall 14 is 5
~420cm, it is the 4th lateral separation H4 to define this distance；It is real by adjusting the vertically distance S4 of the 4th lateral separation H4 and the 4th
Matter is equal to regulation polycrystalline silicon ingot casting and the free space at ingot single crystal crucible left upper end angle, as long as free space regulation is closed
It is suitable, just can guarantee that ingot furnace internally can have enough transformation spaces in left upper end angle, also avoid excessively increasing free space and
Reduce the inside free space of polycrystalline silicon ingot casting and ingot single crystal crucible.
Especially, as the 4th lateral separation H4 and the 4th, vertically distance S4 is set as 350.0cm-370cm, 350.0cm-
During 370cm, more preferably, more conducively ingot casting improves monocrystalline crystal forming rate to its application effect；When being set as 9-17cm, it is more beneficial for improving dress
Doses, production capacity is improved, lower energy consumption.
A kind of improve of polycrystalline silicon ingot casting and ingot single crystal crucible described in embodiment of the present invention can be such as Fig. 1 and 2 institutes
Show, vertical range, the second sidewall 12 of the first side wall 11 to the second sidewall 12 arrive the first side wall 11
Vertical range, vertical range, the 3rd side wall 13 of the second sidewall 12 to the 3rd side wall 13 arrive second side
The vertical range of wall 12, the vertical range of the 3rd side wall 13 to the 4th side wall 14, the 4th side wall 14 are described in
The vertical range of 3rd side wall 13, the vertical range of the 4th side wall 14 to the first side wall 11, the first side wall 11
Vertical range to the 4th side wall 14 is equal.
In application polycrystalline silicon ingot casting and ingot single crystal crucible, it is necessary in polycrystalline silicon ingot casting and ingot single crystal crucible
The material of molten condition is injected, after material solidifies in the future, then is cut into more block size identical square silicon chips；And combine upper
Text understands, i.e. the first lateral separation H1, the second lateral separation H2, the 3rd lateral separation H3, the 4th lateral separation H4, first vertical
Vertically vertically vertically distance S4 is equal by distance S3 and the 4th by distance S2, the 3rd for distance S1, second, and its distance is 5~
420cm, this distance is less than or equal to the length of side of one piece of square silicon pieces, so relative to the crucible of upgrade version, embodiment party of the present invention
Polycrystalline silicon ingot casting described in formula and ingot single crystal are not greatly decreased with the yield of crucible, only need four pieces of square silicon chips of the underproduction, just
Transformation space enough can be provided for ingot furnace, avoid integral replacing polycrystalline silicon ingot casting system and bear huge cost；Specifically
, when distance is less than 17cm, upgrade four silicon ingots at crucible underproduction base angle, when apart from this value is more than, during close to octagon,
When i.e. H1 and S1, H2 and S2, H3 and S3, H4 and S4 are 350-370cm, polycrystal silicon ingot will lose 12 square ingots, and this 12
For the region of crystal forming rate difference at the angle of end, be advantageous to improve ingot single crystal crystal forming rate.
The comprehensive scheme that can at least have the following two kinds model above：
1st, Fig. 3 show G7 types, and now polycrystalline silicon ingot casting and ingot single crystal are octagon with crucible 3A, and its length of side is
1200cm；
2nd, Fig. 4 show G8 types, and now polycrystalline silicon ingot casting and ingot single crystal are octagon with crucible 3B, and its length of side is
1400cm。
Wherein, the grid lines in Fig. 3 and 4 represents the arrangement mode of ingot single crystal, so as to show the structure of G7 types and G8 types
Principle is consistent, and simply G8 types add useful load and ingot single crystal Cheng Jingliang by amplifying.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (6)
1. a kind of polycrystalline silicon ingot casting and ingot single crystal crucible, it is characterised in that the polycrystalline silicon ingot casting and ingot single crystal earthenware
Four sides of crucible are side wall, and the polycrystalline silicon ingot casting and ingot single crystal are transition wall with four ends angle of crucible, adjacent institute
State side wall to be mutually perpendicular to, the adjacent side wall is connected with the same transition wall, and the side wall and the transition wall are enclosed
Into octagon.
2. polycrystalline silicon ingot casting according to claim 1 and ingot single crystal crucible, it is characterised in that
Four side walls are respectively the first side wall, second sidewall, the 3rd side wall and the 4th side wall；
The first side wall and the 3rd side wall are positioned opposite, and the second sidewall and the 4th side wall are positioned opposite；
The first side wall to the vertical range of the second sidewall be 5~420cm, the second sidewall to the first side wall
Vertical range be 5~420cm.
3. polycrystalline silicon ingot casting according to claim 2 and ingot single crystal crucible, it is characterised in that the second sidewall arrives
The vertical range of 3rd side wall is 5~420cm, the vertical range of the 3rd side wall to the second sidewall for 5~
420cm。
4. polycrystalline silicon ingot casting according to claim 2 and ingot single crystal crucible, it is characterised in that the 3rd side wall arrives
The vertical range of 4th side wall is 5~420cm, the vertical range of the 4th side wall to the 3rd side wall for 5~
420cm。
5. polycrystalline silicon ingot casting according to claim 2 and ingot single crystal crucible, it is characterised in that the 4th side wall arrives
The vertical range of the first side wall is 5~420cm, the vertical range of the first side wall to the 4th side wall for 5~
420cm。
6. polycrystalline silicon ingot casting according to claim 2 and ingot single crystal crucible, it is characterised in that the first side wall arrives
The vertical range of the second sidewall, the vertical range of the second sidewall to the first side wall, the second sidewall to institute
The vertical range of the 3rd side wall, the vertical range of the 3rd side wall to the second sidewall, the 3rd side wall are stated described in
The vertical range of 4th side wall, the vertical range of the 4th side wall to the 3rd side wall, the 4th side wall to described
The vertical range of one side wall, the vertical range of the first side wall to the 4th side wall are equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710604037.9A CN107385509A (en) | 2017-07-21 | 2017-07-21 | Polycrystalline silicon ingot casting and ingot single crystal crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710604037.9A CN107385509A (en) | 2017-07-21 | 2017-07-21 | Polycrystalline silicon ingot casting and ingot single crystal crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107385509A true CN107385509A (en) | 2017-11-24 |
Family
ID=60335945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710604037.9A Withdrawn CN107385509A (en) | 2017-07-21 | 2017-07-21 | Polycrystalline silicon ingot casting and ingot single crystal crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107385509A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203393255U (en) * | 2013-07-26 | 2014-01-15 | 青岛隆盛晶硅科技有限公司 | Crucible for realizing no black edges of polycrystalline silicon cast ingot |
| CN105887191A (en) * | 2016-05-10 | 2016-08-24 | 江西中材太阳能新材料有限公司 | Crucible for polycrystalline silicon ingot casting and preparation method thereof |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207079301U (en) * | 2017-07-21 | 2018-03-09 | 江西中材太阳能新材料有限公司 | Polycrystalline silicon ingot casting and ingot single crystal crucible |
-
2017
- 2017-07-21 CN CN201710604037.9A patent/CN107385509A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203393255U (en) * | 2013-07-26 | 2014-01-15 | 青岛隆盛晶硅科技有限公司 | Crucible for realizing no black edges of polycrystalline silicon cast ingot |
| CN105887191A (en) * | 2016-05-10 | 2016-08-24 | 江西中材太阳能新材料有限公司 | Crucible for polycrystalline silicon ingot casting and preparation method thereof |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207079301U (en) * | 2017-07-21 | 2018-03-09 | 江西中材太阳能新材料有限公司 | Polycrystalline silicon ingot casting and ingot single crystal crucible |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101469370B (en) | Method for manufacturing large-sized high purity 12Cr% low-ilicon low-aluminum electroslag remelting steel ingot | |
| CN207079301U (en) | Polycrystalline silicon ingot casting and ingot single crystal crucible | |
| CN104532343B (en) | The preparation method and its fritting high-efficiency seed crystal of a kind of efficient ingot of fritting retain accessory plate | |
| CN203360623U (en) | Polycrystalline silicon ingot furnace | |
| CN107385509A (en) | Polycrystalline silicon ingot casting and ingot single crystal crucible | |
| CN204281893U (en) | A kind of directional solidification thermal-preservation thermal field | |
| CN109811408A (en) | Application of the silicon powder in polycrystalline silicon ingot casting preparation | |
| CN213739615U (en) | Graphite boat for reducing germanium dioxide and casting ingot | |
| CN205556853U (en) | But ingot casting crucible of split | |
| CN207109139U (en) | A kind of Split-type crucible backplate | |
| CN204803440U (en) | Graphite backplate | |
| CN202809001U (en) | Square quartz crucible | |
| CN211440450U (en) | Sand mold for electric smelting M trough brick | |
| CN208008949U (en) | A kind of solar energy quartz crucible fused quartz ceramic roller | |
| CN207699723U (en) | A kind of oblique long brilliant crucible of low sidewall | |
| CN104109903A (en) | Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible | |
| CN208008942U (en) | A kind of solar energy quartz crucible seat device of card | |
| CN207347695U (en) | Polycrystal silicon ingot ingot casting furnace superintendent crystalline substance soaking crucible structure | |
| CN205326392U (en) | A quartz crucible coating for producing high pure silicon polycrystal ingot casting | |
| CN211734528U (en) | Semiconductor silicon material growth furnace with annular crucible | |
| CN104313688A (en) | Method for adjusting crystalline silica growth solid-liquid interface | |
| CN202830226U (en) | Large size quartz ceramic crucible | |
| CN213623820U (en) | Special riser for sheet AZS product | |
| CN204491034U (en) | A kind of movable polycrystalline silicon purifying ingot casting quartz crucible | |
| CN209443107U (en) | A kind of improvement device of Novel polycrystalline silicon ingot furnace crucible side backplate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20171124 |