CN107359206A - Double Gate thin film transistor (TFT)s of flexible and transparent oxide and preparation method thereof - Google Patents
Double Gate thin film transistor (TFT)s of flexible and transparent oxide and preparation method thereof Download PDFInfo
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- CN107359206A CN107359206A CN201710684293.3A CN201710684293A CN107359206A CN 107359206 A CN107359206 A CN 107359206A CN 201710684293 A CN201710684293 A CN 201710684293A CN 107359206 A CN107359206 A CN 107359206A
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000013077 target material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910021389 graphene Inorganic materials 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 238000009738 saturating Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses disclose double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof.It is used as source and drain electrode and metal Gate electrodes by controlling oxygen content to make the TCO of semiconductor TCO oxide trenches and metallicity by the use of TCO rotary target materials and metal flat target material magnetic sputtering especially on the flexible substrate of flexible stretching, realizes the TFTs of flexible and transparent.ON/OFF electric current ratio：1.5‑3.6X 106；Threshold voltage 5.0 arrives 1.0V；Light transmittance is more than 80%.
Description
Technical field
The invention discloses double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof.Especially in bendable
Partly led with TCO rotary target materials and metal flat target material magnetic sputtering by controlling oxygen content to make on the flexible substrate that Qula is stretched
The TCO of body TCO oxide trenches and metallicity realizes the TFTs of flexible and transparent as source and drain electrode.
Background technology
Because it can be carried, mobility is high, and process temperatures are low, and flexible transparent oxide thin film transistor is in flexible electrical
Son is learned and the application of display above causes extensive concern.Electronic device is exactly produced on flexible Drawability and moulded by flexible electronic
New electronic technology on material, glass or thin metal matrix plate, manufactured with its unique flexibility, ductility and efficient, low cost
Technique, there is wide application prospect in fields such as information, the energy, medical treatment, national defence, such as flexible electronic displays, thin film solar
Cell panel, electronics surface mount etc..Flexible electronic have it is soft, deformable, light, portable, can the spy such as large-area applications
Property, and by widely applying new material and new technology produces a large amount of new opplications, including RFID, Flexible Displays, OLED it is luminous,
Sensor, flexible photovoltaic, logical AND storage, flexible battery.In future, paste " electronics paster " just can detect purple on the back of the hand
Outside line degree of illumination；Pacemaker no longer changes battery；Battery can directly wind production simultaneously.In recent years, flexible electrical
This sub new branch of science has caused the extensive concern of domestic and international scientific and technological circle and industrial quarters, attracts numerous companies and puts into
The R＆D process of this sciemtifec and technical sphere, the practical product of flexible electronic is accelerated to develop and be commercialized process.In development in science and technology
In " 13 " planning, country will promote China flexible energetically and printed electronic by policy guide and nursery finance
Research and industrialization.China is electronic industry big country, but be not technology power, flexible electronic be China strive for electronic industry across
The more chance of formula development.Flexible electronic has broad mass market, and market scale is expanded rapidly, can turn into national pillar industry.
The content of the invention
Goal of the invention：Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof are provided, especially can
With TCO rotary target materials and metal flat target material magnetic sputtering by controlling oxygen content to make half on the flexible substrate of bend tension
The TCO of conductor TCO oxide trenches and metallicity realizes the TFTs of flexible and transparent as source and drain electrode.
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
The matrix that flexible stretches is heated to 80 DEG C of removing surface moistures by step 1. in vacuum chamber；Then pass to
450SCCM flows Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
Step 2. is used in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr
Transparent conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as metal
Gate electrodes；
Step 3. ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4. is in radio-frequency power 120-180W, Ar/O2Flow 300/15SCCM, operating pressure 2-6mTorr environment
Under, with transparent conductive oxide rotation or the semiconductor TCO films of planar targets 800 nanometers of deposit thickness on flexible substrate
As metal oxide semiconductor raceway groove；
Step 5. is used in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr
Transparent conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as metal
Source, drain electrode；Distance is 20 microns between two electrodes.
Step 6. ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7. is used in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr
Transparent conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as metal
Gate electrodes.
Step 8. flexibility of HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of transparent conductive oxide (TCO) can characterize.
Further, the transparent conductive oxide raceway groove, source, drain electrode and metal Gate electrodes include indium-zinc oxide
(IZO), nickel doping zinc-oxide, indium gallium zinc oxide (IGZO) and graphene oxide etc., flexible substrate includes PET, PI, PES,
PDMS, flexible glass etc., but it is not limited only to above-mentioned material.
Further, the semiconductor TCO and metal TCO are to be realized in target material magnetic sputtering by controlling oxygen content
's.
Brief description of the drawings
Fig. 1 is the structural representation of flexible and transparent oxide double gate thin-film transistor of the present invention；
Embodiment
Presently preferred embodiments of the present invention is described in detail below so that advantages and features of the invention can be easier to by
It will be appreciated by those skilled in the art that apparent clearly defined so as to be made to protection scope of the present invention.
Embodiment 1
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
Step 1：The PES of flexible stretching is heated to 80 DEG C of removing surface moistures in vacuum chamber；Then pass to 450
Sccm flow amount Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
Step 2：In radio-frequency power 120W, pure Ar flows 300SCCM, operating pressure 3mTorr；With IZO (In2O3/ZnO
90/10wt.%) the metal IZO films of rotary target material 500 nanometers of deposit thickness on flexible PES are as metal Gate electrodes；
Step 3：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4：In radio-frequency power 120W, Ar/O2Flow 300/15SCCM, operating pressure 3mTorr；With IZO rotary targets
The semiconductor IZO films of material 800 nanometers of deposit thickness on flexible PES are as metal oxide semiconductor raceway groove；
Step 5：In radio-frequency power 120W, pure Ar flows 300SCCM, operating pressure 3mTorr；Use transparent conductive oxide
The metal IZO films of rotation or planar targets 500 nanometers of deposit thickness on flexible PES are as source metal, drain electrode；Two
Distance is 20 microns between electrode.
Step 6：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7：In radio-frequency power 120W, pure Ar flows 300SCCM, operating pressure 3mTorr；Existed with IZO rotary target materials
The metal IZO films of 500 nanometers of rice of deposit thickness are as metal Gate electrodes on flexible PES.
Step 8：With HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation based on
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of PES flexible and transparents IZO can characterize.
Embodiment 2
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
Step 1：The PES/PDMS of flexible stretching is heated to 80 DEG C of removing surface moistures in vacuum chamber；Then
It is passed through 450SCCM flows Ar and surface plasma pretreatment cleaning is carried out under 200W DC voltages；
Step 2：In radio-frequency power 130W, pure Ar flows 300SCCM, operating pressure 5mTorr；With graphene oxide plane
The metal graphene oxide film of target 500 nanometers of deposit thickness on flexible PES/PDMS is as metal Gate electrodes；
Step 3：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4：In radio-frequency power 130W, Ar/O2Flow 300/15SCCM, operating pressure 5mTorr；Use graphene oxide
The semiconductor oxide graphene film of planar targets 800 nanometers of deposit thickness on flexible PES/PDMS is as semiconductor alloy
Oxide trenches；
Step 5：In radio-frequency power 130W, pure Ar flows 300SCCM, operating pressure 5mTorr；With graphene oxide plane
The metal graphene oxide film of target 500 nanometers of deposit thickness on flexible PES/PDMS is as source metal, drain electrode；Two
Distance is 20 microns between individual electrode.
Step 6：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7：In radio-frequency power 130W, pure Ar flows 300SCCM, operating pressure 5mTorr；With graphene oxide plane
Target flexible 500 nanometers of PES/PDMS deposit thickness metal graphene oxide film as metal Gate electrodes
Step 8：With HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation based on
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of PES/PDMS flexible and transparents graphene oxide can characterize.
Embodiment 3
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
Step 1：The PET of flexible stretching is heated to 80 DEG C of removing surface moistures in vacuum chamber；Then pass to 450
Sccm flow amount Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
Step 2：In radio-frequency power 150W, pure Ar flows 300SCCM, operating pressure 3mTorr；With IZO (In2O3/ZnO
90/10wt.%) planar targets in the metal IZO films of flexible 500 nanometers of PET deposit thickness as metal Gate electrodes；
Step 3：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4：In radio-frequency power 150W, Ar/O2Flow 300/15SCCM, operating pressure 3mTorr；With IZO flat targets
The semiconductor IZO films of material 800 nanometers of deposit thickness on flexible PET are as metal oxide semiconductor raceway groove；
Step 5：In radio-frequency power 150W, pure Ar flows 300SCCM, operating pressure 3mTorr；Existed with IZO planar targets
The metal IZO films of 500 nanometers of deposit thickness are as source metal, drain electrode on flexible PET；Distance is 20 between two electrodes
Micron.
Step 6：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7：In radio-frequency power 150W, pure Ar flows 300SCCM, operating pressure 3mTorr；With IZO targets in flexibility
The metal IZO films of 500 nanometers of the upper deposit thickness of PET are as metal Gate electrodes
Step 8：With HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation based on
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of PET flexibilities IZO can characterize；
Embodiment 4
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
Step 1：By 25 microns of flexible 80 DEG C of removing surface moistures are heated in vacuum chamber；Then pass to 450
Sccm flow amount Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
Step 2：In radio-frequency power 160W, pure Ar flows 300SCCM, operating pressure 6mTorr；With NZO (Ni adulterates ZnO)
The metal NZO films of rotary target material 500 nanometers of deposit thickness in flexible glass are as metal Gate electrodes；
Step 3：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4：In radio-frequency power 160W, Ar/O2Flow 300/15SCCM, operating pressure 6mTorr；With NZO rotary targets
The semiconductor N ZO films of material 800 nanometers of deposit thickness in flexible glass are as metal oxide semiconductor raceway groove；
Step 5：In radio-frequency power 160W, pure Ar flows 300SCCM, operating pressure 6mTorr；Existed with NZO rotary target materials
The metal NZO films of 500 nanometers of deposit thickness are as source metal, drain electrode in flexible glass；Distance is 20 between two electrodes
Micron.
Step 6：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7：In radio-frequency power 160W, pure Ar flows 300SCCM, operating pressure 6mTorr；Existed with NZO rotary target materials
The metal NZO films of 500 nanometers of deposit thickness are as metal Gate electrodes in flexible glass
Step 8：With HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation based on
The electrical property of the double Gate thin film transistor (TFT)s of transparent NZO and translucidus can characterize in flexible glass.
Embodiment 5
Double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, comprise the following steps：
Step 1：The PI of flexible stretching is heated to 80 DEG C of removing surface moistures in vacuum chamber；Then pass to 450
Sccm flow amount Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
Step 2：In radio-frequency power 180W, pure Ar flows 300SCCM, operating pressure 2mTorr；With IGZO (In2O3/
Ga2O3/ ZnO) rotary target material 500 nanometers of deposit thickness on flexible PI metal IGZO films as metal Gate electrodes；
Step 3：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 4：In radio-frequency power 180W, Ar/O2Flow 300/15SCCM, operating pressure 2mTorr；With IGZO rotary targets
The semiconductor IGZO films of material 800 nanometers of deposit thickness on flexible PI are as metal oxide semiconductor raceway groove；
Step 5：In radio-frequency power 180W, pure Ar flows 300SCCM, operating pressure 2mTorr；Use transparent conductive oxide
The metal IGZO films of rotation or planar targets 500 nanometers of deposit thickness on flexible PI are as source metal, drain electrode；Two
Distance is 20 microns between electrode.
Step 6：With ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3
Gate dielectric.
Step 7：In radio-frequency power 180W, pure Ar flows 300SCCM, operating pressure 2mTorr；Existed with IGZO rotary target materials
The metal IGZO films of 500 nanometers of deposit thickness are as metal Gate electrodes on flexible PET
Step 8：With HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation based on
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of PI flexible and transparents IGZO can characterize.
Table 1：The double Gate thin film transistor (TFT) testing results of TCO
| Invention is implemented | Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 |
| ON/OFF electric current ratio | 3.0X106 | 3.6X106 | 2.9X106 | 3.0X106 | 1.5X106 |
| Threshold voltage (V) | -4.1 | -1.0 | -5.0 | -2.9 | -3.8 |
| Light transmittance (%) | 85 | 80 | 83 | 89 | 85 |
Above-described embodiment is merely to illustrate the present invention, and according to above-described embodiment, the present invention may be better understood, and does not have to
In limitation the scope of the present invention.In addition, this area scientific research technical staff read the present invention after, with equivalent substitution or variable etc.
Various modifications are carried out to the present invention, also belong to claims of the present invention limited range.
Claims (3)
1. double Gate thin film transistor (TFT)s of a kind of flexible and transparent oxide and preparation method thereof, the especially flexible base in flexible stretching
With TCO rotary target materials and metal flat target material magnetic sputtering by controlling oxygen content to make semiconductor TCO oxide trenches on body
With the TCO of metallicity as source and drain electrode, the TFTs of flexible and transparent is realized, it is characterised in that step is as follows：
The matrix that flexible stretches is heated to 80 DEG C of removing surface moistures by step 1. in vacuum chamber；Then pass to
450SCCM flows Ar carries out surface plasma pretreatment cleaning under 200W DC voltages；
For step 2. in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr, use is transparent
Conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as metal Gate electricity
Pole；
Step 3. ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3Grid
Dielectric layer.
Step 4. is in radio-frequency power 120-180W, Ar/O2In the environment of flow 300/15SCCM, operating pressure 2-6mTorr, with saturating
The semiconductor TCO thin film of bright conductive oxide rotation or planar targets 800 nanometers of deposit thickness on flexible substrate, which is used as, partly to be led
Body metal oxide raceway groove；
For step 5. in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr, use is transparent
Conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as source metal, leakage
Electrode；Distance is 20 microns between two electrodes.
Step 6. ald gate dielectric；Trimethyl aluminium forms Al at 150 DEG C using ald2O3Grid
Dielectric layer.
For step 7. in the environment of radio-frequency power 120-180W, pure Ar flows 300SCCM, operating pressure 2-6mTorr, use is transparent
Conductive oxide rotates or the metal TCO thin film of planar targets 500 nanometers of deposit thickness on flexible substrate is as metal Gate electricity
Pole.
Step 8. flexible and transparent of HP4155C Semiconductor Parameter Analyzers and Agilent Cary-5000 spectrometers to preparation
The electrical property and translucidus of the double Gate thin film transistor (TFT)s of conductive oxide (TCO) can characterize.
2. double Gate thin film transistor (TFT)s of flexible and transparent oxide according to claim 1 and preparation method thereof, it is characterised in that
The transparent conductive oxide raceway groove, source, drain electrode and metal Gate electrodes include indium-zinc oxide (IZO), nickel doping zinc-oxide,
Indium gallium zinc oxide (IGZO) and graphene oxide etc., flexible substrate include PET, PI, PES, PDMS, flexible glass etc., but not
It is only limitted to above-mentioned material.
3. double Gate thin film transistor (TFT)s of flexible and transparent oxide according to claim 1 and preparation method thereof, it is characterised in that
The semiconductor TCO and metal TCO are realized in target material magnetic sputtering by controlling oxygen content.
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