CN108511348A - A kind of PEN flexible substrates transparent film transistor and preparation method thereof - Google Patents
A kind of PEN flexible substrates transparent film transistor and preparation method thereof Download PDFInfo
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- CN108511348A CN108511348A CN201810354534.2A CN201810354534A CN108511348A CN 108511348 A CN108511348 A CN 108511348A CN 201810354534 A CN201810354534 A CN 201810354534A CN 108511348 A CN108511348 A CN 108511348A
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- transparent film
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- film transistor
- magnetron sputtering
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- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 4
- 238000004062 sedimentation Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 2
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 19
- 238000000137 annealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Abstract
The invention belongs to display device field, a kind of PEN flexible substrates transparent film transistor and preparation method thereof is disclosed.Substrate of glass is cleaned, OCA sticker last layers PEN is used after drying；AZO grids are prepared by r. f. magnetron sputtering on PEN layers；On AZO grids Al is prepared using r. f. magnetron sputtering2O3Gate insulating layer；Pulsed dc magnetron sputtering sedimentation IGZO semiconductor layers are used on gate insulating layer；Use rf magnetron sputtering depositing Al on the semiconductor layer2O3Semiconductor decorative layer；Using pulsed laser deposition AZO source-drain electrodes, PEN flexible substrate transparent film transistors are obtained.The present invention uses grids and source-drain electrode of the AZO as TFT devices, gained TFT devices to have the advantages that high-performance, the high grade of transparency and nontoxic.
Description
Technical field
The invention belongs to display device fields, and in particular to a kind of PEN flexible substrates transparent film transistor and its preparation
Method.
Background technology
It is that the electrode material prepared is difficult to compatible height thoroughly to prepare the difficulty that high transparency fexible film crystal mainly faces at present
Bright property and high conductivity.There is now the technology to solve the above problems mainly uses ITO, IZO etc. containing phosphide material as film crystalline substance
It the electrode of body pipe and is made annealing treatment.Phosphide element provides a large amount of electronics for electrode film, and annealing being capable of pole in addition
The earth improve electrode interior defect, can prepare highly conductive, high transparency film ([1] Hoffman R L, Norris B J,
Wager J F.ZnO-based transparent thin-film transistors[J].Applied Physics
Letters,2003,82(5):733-735.[2]Cai J,Han D,Geng Y,et al.High-Performance
Transparent AZO TFTs Fabricated on Glass Substrate[J].IEEE Transactions on
Electron Devices,2013,60(7):2432-2435)。
Although above-mentioned technology can prepare the film with certain transparency and low-resistivity, need to make annealing treatment, nothing
Method is applied in Flexible Displays, and the element indium that the materials such as ITO, IZO contain is of high cost, toxic, in the progradation of industrialization
Middle meeting is hindered because of cost factor and Environmental Factors.
Invention content
In place of the above shortcoming and defect of the existing technology, the primary purpose of the present invention is that providing a kind of PEN
The preparation method of flexible substrate transparent film transistor.
Another object of the present invention is to provide a kind of transparent film transistors being prepared by the above method.
The object of the invention is achieved through the following technical solutions：
A kind of preparation method of PEN flexible substrates transparent film transistor, including following preparation process：
(1) substrate of glass is cleaned, drying pretreatment；
(2) OCA sticker last layers PEN is used in substrate after the pre-treatment；
(3) AZO grids are prepared by r. f. magnetron sputtering on PEN layers；
(4) on AZO grids Al is prepared using r. f. magnetron sputtering2O3Gate insulating layer；
(5) pulsed dc magnetron sputtering sedimentation IGZO semiconductor layers are used on gate insulating layer；
(6) rf magnetron sputtering depositing Al on the semiconductor layer is used2O3Semiconductor decorative layer；
(7) pulsed laser deposition AZO source-drain electrodes are used, PEN flexible substrate transparent film transistors are obtained.
Further, cleaning described in step (1) refers to that deionized water and isopropanol is used to be cleaned by ultrasonic respectively, the baking
Dry refers to drying at 80~85 DEG C in an oven.
Further, AZO gates described in step (3) are 70nm~100nm.
Further, the technological parameter of r. f. magnetron sputtering described in step (3) is as follows：Sputtering power is 80W, splashes
It is 100 that pressure of emanating, which is 1mtorr, argon gas and oxygen proportion,:0.
Further, Al described in step (4)2O3The thickness of gate insulating layer is 300nm~350nm.
Further, the technological parameter of r. f. magnetron sputtering described in step (4) is as follows：Sputtering power be 120W,
Sputtering pressure is 1mtorr, argon gas and oxygen proportion are 100:0.
Further, the thickness of IGZO semiconductor layers described in step (5) is 9.5nm~10nm.
Further, the technological parameter of the sputtering of pulsed dc magnetron described in step (5) is as follows：Sputtering power be 120W,
Sputtering pressure is 1mtorr, argon gas and oxygen proportion are 100:5, application pulse is 10KHz, 10 μ s.
Further, Al described in step (6)2O3The thickness of semiconductor decorative layer is 3nm~3.5nm.
Further, the technological parameter of rf magnetron sputtering described in step (6) is as follows：Sputtering power is 120W, sputters
Air pressure is 1mtorr, argon gas and oxygen proportion are 100:0.
Further, the thickness of AZO source-drain electrodes described in step (7) is 100nm~150nm.
Further, pulse laser deposition process parameter described in step (7) is as follows：Application voltage is 21.6Kv, laser
Energy is 450mJ, laser frequency 5HZ, and it is 2500 to apply umber of pulse, and oxygen pressure is 0mtorr.
A kind of PEN flexible substrates transparent film transistor, is prepared by the above method.
The present invention preparation method and obtained thin film transistor (TFT) has the following advantages that and advantageous effect：
(1) present invention uses grids and source-drain electrode of the AZO as TFT devices, gained TFT devices to have high-performance, height
Transparency and nontoxic advantage.
(2) the transparent TFT devices whole preparation process of the present invention is that room temperature process can be applied to soft without annealing
In property substrate.
(3) present invention employs single layer AZO films, simplification of flowsheet realizes that room temperature prepares that highly conductive, high transparency is thin
Film.And the element that AZO films contain is Al, Zn, O, these three element resources are abundant, and all nontoxic, can be very good
Respond the environment protection requirement advocated instantly.
Description of the drawings
Fig. 1 is a kind of stepped construction schematic diagram of PEN flexible substrates transparent film transistor of the embodiment of the present invention.
Fig. 2 and Fig. 3 is respectively the output characteristic curve of PEN flexible substrate transparent film transistors obtained by the embodiment of the present invention
Figure and transfer characteristic curve figure.
Fig. 4 is the transmitted light spectrogram of PEN flexible substrate transparent membrane crystal obtained by the embodiment of the present invention.
Specific implementation mode
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment
A kind of PEN flexible substrates transparent film transistor of the present embodiment, stepped construction schematic diagram are as shown in Figure 1.By
The substrate of glass 01 stacked gradually, flexible PEN substrates 02, AZO grids 03, Al2O3Gate insulating layer 04, IGZO semiconductor layers 05,
Al2O3Semiconductor decorative layer 06 and AZO source-drain electrodes 07 are constituted.The transparent film transistor is prepared via a method which to obtain：
(1) deionized water and isopropanol is used to be cleaned by ultrasonic 10min or so, the glass base that will be cleaned respectively substrate of glass
Bottom is put into baking oven, is dried at 80~85 DEG C.
(2) OCA sticker last layer PEN flexible substrates are used in the substrate of glass after cleaning, drying.
(3) 70nm~100nm AZO grids, deposition are prepared using r. f. magnetron sputtering in PEN flexible substrates
Technological parameter is as follows：Sputtering power is 80W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
(4) 300nm~350nm Al are prepared using r. f. magnetron sputtering on AZO grids2O3Gate insulating layer,
Deposition process parameters are as follows：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
(5) in Al2O3Pulsed dc magnetron sputtering sedimentation 9.5nm~10nm IGZO semiconductors are used on gate insulating layer
Layer, deposition process parameters are as follows：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:5,
Application pulse is 10KHz, 10 μ s.
(6) r. f. magnetron sputtering 3nm~3.5nm Al are used on IGZO semiconductor layers2O3Semiconductor decorative layer,
Deposition process parameters are as follows：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
(7) use pulsed laser deposition 100nm~150nm AZO source-drain electrodes, technological parameter as follows：Applying voltage is
21.6Kv, laser energy 450mJ, laser frequency 5HZ, it is 2500 to apply umber of pulse, and oxygen pressure is 0mtorr.
The output characteristic curve figure and transfer characteristic curve figure of PEN flexible substrate transparent film transistors obtained by the present embodiment
It is as shown in Figures 2 and 3 respectively.It can obtain the saturation mobility [mu] of the TFTsatFor 6.3cm2/ Vs, on-off ratio Ion/IoffIt is 4.13
×106, cut-in voltage Von is 1.14V.
The transmitted light spectrograms of PEN flexible substrate transparent film transistors obtained by the present embodiment is as shown in figure 4, can be with from figure
Show that the TFT devices are up to 85% in the mean transmissivity of visible region.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (8)
1. a kind of preparation method of PEN flexible substrates transparent film transistor, it is characterised in that including following preparation process：
(1) substrate of glass is cleaned, drying pretreatment；
(2) OCA sticker last layers PEN is used in substrate after the pre-treatment；
(3) AZO grids are prepared by r. f. magnetron sputtering on PEN layers；
(4) on AZO grids Al is prepared using r. f. magnetron sputtering2O3Gate insulating layer；
(5) pulsed dc magnetron sputtering sedimentation IGZO semiconductor layers are used on gate insulating layer；
(6) rf magnetron sputtering depositing Al on the semiconductor layer is used2O3Semiconductor decorative layer；
(7) pulsed laser deposition AZO source-drain electrodes are used, PEN flexible substrate transparent film transistors are obtained.
2. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
Cleaning described in step (1) refers to using deionized water and isopropanol to be cleaned by ultrasonic respectively, and the drying refers in an oven 80
It is dried at~85 DEG C.
3. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
AZO gates described in step (3) are 70nm~100nm；The technological parameter of the r. f. magnetron sputtering is as follows：Sputtering
Power is 80W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
4. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
Al described in step (4)2O3The thickness of gate insulating layer is 300nm~350nm；The technique of the r. f. magnetron sputtering is joined
Number is as follows：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
5. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
The thickness of IGZO semiconductor layers described in step (5) is 9.5nm~10nm；The technological parameter of the pulsed dc magnetron sputtering is such as
Under：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:5, application pulse is 10KHz, 10 μ
s。
6. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
Al described in step (6)2O3The thickness of semiconductor decorative layer is 3nm~3.5nm；The technological parameter of the rf magnetron sputtering is such as
Under：Sputtering power is 120W, sputtering pressure 1mtorr, argon gas and oxygen proportion are 100:0.
7. a kind of preparation method of PEN flexible substrates transparent film transistor according to claim 1, it is characterised in that：
The thickness of AZO source-drain electrodes described in step (7) is 100nm~150nm；The pulse laser deposition process parameter is as follows：It applies
Making alive is 21.6Kv, laser energy 450mJ, laser frequency 5HZ, and it is 2500 to apply umber of pulse, and oxygen pressure is 0mtorr.
8. a kind of PEN flexible substrates transparent film transistor, it is characterised in that：Pass through claim 1~7 any one of them side
Method is prepared.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109411543A (en) * | 2018-09-20 | 2019-03-01 | 华南理工大学 | A kind of transparent film transistor and preparation method thereof |
| CN109449199A (en) * | 2018-09-27 | 2019-03-08 | 华南理工大学 | A kind of full aluminium transparent grid electrode thin film transistor (TFT) and preparation method thereof |
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| CN107302027A (en) * | 2017-07-04 | 2017-10-27 | 华南理工大学 | A kind of thin film transistor (TFT) of double-deck active layer structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411543A (en) * | 2018-09-20 | 2019-03-01 | 华南理工大学 | A kind of transparent film transistor and preparation method thereof |
| CN109449199A (en) * | 2018-09-27 | 2019-03-08 | 华南理工大学 | A kind of full aluminium transparent grid electrode thin film transistor (TFT) and preparation method thereof |
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Application publication date: 20180907 |