CN107346992A

CN107346992A - A kind of optical sender and optical fiber telecommunications system

Info

Publication number: CN107346992A
Application number: CN201710348321.4A
Authority: CN
Inventors: 冉文方
Original assignee: Xian Cresun Innovation Technology Co Ltd
Current assignee: Xian Cresun Innovation Technology Co Ltd
Priority date: 2017-05-17
Filing date: 2017-05-17
Publication date: 2017-11-14

Abstract

The present invention relates to a kind of optical sender and optical fiber telecommunications system, including：Input circuit, for carrying out scrambler and encoding operation to the electric signal of input；Drive circuit, input circuit is electrically connected, for the electric signal after scrambler and coding to be modulated, form modulated signal；Light source module, drive circuit is electrically connected, for driving light source module according to modulated signal and producing optical signal；Temperature-control circuit, light source module is electrically connected, for stablizing the operating temperature of the light source module.Light source in the optical sender of the present invention uses the LED of ledge structure, improves luminous efficiency, reduces the cost of optical sender.

Description

A kind of optical sender and optical fiber telecommunications system

Technical field

The invention belongs to technical field of optical fiber communication, more particularly to a kind of optical sender and optical fiber telecommunications system.

Background technology

Fiber optic communication since the advent of the world, brought to the whole communications field or even national economy, Defence business and people's lives Huge change.Fiber optic communication is to convert electrical signals into optical signal using optical sender to be transmitted.

Light source is the important module in optical sender.Semiconductor laser (LD) or semiconductor light-emitting-diode (LED) are made For light source device, light source at work between long or temperature it is too high when, the power of output can reduce, and cause the light of output Jitter.With the development of optical communication technique, requirement of the speed fiber optic communication systems to semiconductor light-emitting-diode is also got over Carry out higher, integrated development trend and require that semiconductor light-emitting-diode integrates with other photoelectric devices.

For semiconductor light-emitting-diode as light source device, how to improve luminous efficiency just becomes of crucial importance.

The content of the invention

In order to solve the above-mentioned technical problem, the invention provides a kind of optical sender and optical fiber telecommunications system.

The embodiment provides a kind of optical sender, including：

Input circuit, for carrying out scrambler and encoding operation to the electric signal of input；

Drive circuit, the input circuit is electrically connected, for the electric signal after scrambler and coding to be modulated, shape Into modulated signal；

Light source module, the drive circuit is electrically connected, for driving the light source module according to the modulated signal and producing Third contact of a total solar or lunar eclipse signal；

Temperature-control circuit, the light source module is electrically connected, for stablizing the operating temperature of the light source module.

In one embodiment of the invention, the input circuit includes：The input interface that is sequentially connected electrically, balanced amplification Device, code conversion module, Multiplexing module, scrambler coding module.

In one embodiment of the invention, the input circuit also includes：Clock Extraction module；Wherein,

The input of the Clock Extraction module electrically connects the equalizer amplifier, and output end is electrically connected the pattern Conversion module, the Multiplexing module, the scrambler coding module.

In one embodiment of the invention, in addition to light detection module and alarm output circuit；Wherein,

The light detection module is used for the optical signal for detecting the light source module output, the alarm output circuit electrical connection The light detection module is for being detected and alarmed to the working condition of the light source module.

In one embodiment of the invention, the light source module includes light emitting diode, lead and lens；Wherein, institute State input of the positive and negative pin with the light source module that lead is used to connect the light emitting diode；The lens are arranged at institute State in the light-emitting area of light emitting diode for assembling and transmit the optical signal.In one embodiment of the invention, it is described First Ge layers (12) are p-type, and doping concentration is 5 × 10¹⁸cm^-3。

In one embodiment of the invention, the light emitting diode is the LED based on ledge structure, and the LED includes：

Single crystal Si substrate；

First Ge layers, it is arranged at the single crystal Si substrate surface；

Ge base station stage structures, it is arranged at the center position of the first Ge layer surfaces；

Positive electrode, it is arranged at the upper surface of the first Ge layers and positioned at the opening position of ledge structure both sides；

Negative electrode, it is arranged at the upper surface of the ledge structure；

Passivation layer, it is arranged at the upper surface of the first Ge layers and the ledge structure.

In one embodiment of the invention, the first Ge layers include Ge inculating crystal layers, Ge body layers and the 2nd Ge layers；Its In, the Ge body layers are arranged at the Ge inculating crystal layers upper surface, and the 2nd Ge layers are arranged at the Ge body layers upper surface.

In one embodiment of the invention, the optical source wavelength of the LED transmissions based on ledge structure is 1550nm。

A kind of optical fiber telecommunications system is provided in an alternative embodiment of the invention, including：

Sense light signal transmitter, optical sender, wave multiplexer, circulator, sensing optical signal and receive resolver and optical fiber；

Wherein, the sensing light signal transmitter is electrically connected to the wave multiplexer so that sensing optical signal is sent to the conjunction Ripple device, the optical sender are electrically connected to the wave multiplexer so that caused optical signal is sent to the wave multiplexer, the wave multiplexer The circulator is electrically connected to send so that multiplex signal will be formed after the sensing optical signal and optical signal progress multiplex processing To the circulator, the circulator is electrically connected to the optical fiber to send the multiplex signal to the optical fiber and receive institute State the sensing optical signal that return is scattered in optical fiber, the sensing optical signal receive resolver be electrically connected to the circulator with Receive the sensing optical signal that scattering returns and dissection process；Wherein, described in any of the above-described embodiment of the optical sender Emitter.

In one embodiment of the invention, the sensing light signal transmitter includes laser transmitting set and CD-ROM driver, The sensing optical signal, which receives resolver, includes optical-electrical converter and data collection processor.

Compared with prior art, the invention has the advantages that：

1) LED based on ledge structure that the present invention uses, have Ge epitaxial layers crystal mass high, Ge epitaxial layer dislocations are close The advantages of low is spent, so as to further improve the luminous efficiency of light emitting diode；

2) optical fiber telecommunications system provided by the invention realizes communication and sensing simultaneously in same root optical fiber, has saved light Fine resource, is greatly reduced production cost；The system integrated level is high, can will communication and sensing device it is highly integrated, reduce and be The complexity of system, it is easy to daily be installed on maintenance.

Brief description of the drawings

Below in conjunction with accompanying drawing, the embodiment of the present invention is described in detail.

Fig. 1 is a kind of structural representation of optical sender provided in an embodiment of the present invention；

Fig. 2 is a kind of structural representation of optical sender input circuit provided in an embodiment of the present invention；

Fig. 3 is a kind of structural representation of optical sender light source module provided in an embodiment of the present invention；

Fig. 4 is that a kind of light emitting diode construction for optical sender light source module provided in an embodiment of the present invention is illustrated Figure；

Fig. 5 is a kind of LRC processes schematic diagram provided in an embodiment of the present invention；

Fig. 6 is that another light emitting diode construction for being used for optical sender light source module provided in an embodiment of the present invention is illustrated Figure；

Fig. 7 a- Fig. 7 l are a kind of preparation work of light emitting diode for optical sender light source module of the embodiment of the present invention Skill schematic diagram；

Fig. 8 is a kind of optical fiber telecommunications system structural representation provided in an embodiment of the present invention.

Embodiment

Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to This.

Embodiment one

It refer to Fig. 1, Fig. 1 is a kind of structural representation of optical sender provided in an embodiment of the present invention, the optical sender 10 include：

Input circuit 11, for carrying out scrambler and encoding operation to the electric signal of input；

Drive circuit 12, the input circuit 11 is electrically connected, for the electric signal after scrambler and coding to be adjusted System, form modulated signal；

Light source module 13, the drive circuit 12 is electrically connected, for driving the light source module according to the modulated signal 13 and produce optical signal；

Temperature-control circuit 14, the light source module 13 is electrically connected, for stablizing the operating temperature of the light source module 13.

Wherein, as shown in Fig. 2 Fig. 2 is a kind of structural representation of optical sender input circuit provided in an embodiment of the present invention Figure, the input circuit 11 include：The input interface 101 that is sequentially connected electrically, equalizer amplifier 102, code conversion module 103, Multiplexing module 104, scrambler coding module 105.

Wherein, the input circuit 11 also includes：Clock Extraction module 106；

Further, the input of the Clock Extraction module 106 electrically connects the equalizer amplifier 102, output end point The code conversion module 103, the Multiplexing module 104, the scrambler coding module 105 are not electrically connected.

Wherein, input interface 101 is used for receiving the pulse signal of electric terminal (PCM) input, and this interface is commonly referred to as electricity Interface.

Wherein, equalizer amplifier 102 be used for pulse signals carry out it is balanced, compensate as caused by cable transmission decay and Distortion, so as to correct decoding.

Wherein, Clock Extraction module 106 is used to provide clock signal as time reference to code conversion and scrambler process.

Wherein, code conversion module 103 is used to code stream being transformed to unipolar " 0 ", " 1 " nonreturn to zero code (i.e. NRZ codes). Because balanced device output is HDB3 codes, three are worth bipolar codes (i.e.+1,0, -1).And light source can only be with having light and unglazed with " 0 " " 1 " is corresponding, it is therefore desirable to passes through code conversion circuit.

Wherein, Multiplexing module 104 refer to using high capacity transmission channel come and meanwhile transmit the user profile of multiple low capacity And the process of Overhead.

Wherein, scrambler coding module 105 is used for, if occurring the situation of long even " 0 " or long even " 1 " in information code current, it will Extraction to clock signal brings difficulty, adds scrambler circuit, reaches " 0 " code and " 1 " code equiprobability occurs.In the optical fiber of reality In communication system, in addition to needing to transmit main signal, it is also necessary to realize some other functions, such as the error code of uninterrupted business is supervised The functions such as survey, section communication contact, official traffic, monitoring, it is therefore desirable to increase some letters on the basis of signal after scrambler Redundancy is ceased, that is, carries out line coding.

Wherein, drive circuit 12, also referred to as modulation circuit, the electric signal after scrambler is by modulation circuit to light source It is modulated, allows the light signal strength that light source is sent to change with the change of electric signal code stream.

Wherein, the optical sender also includes light detection module 15 and alarm output circuit 16；

Further, the light detection module 15 is used to detect the optical signal that the light source module 13 exports, the alarm Output circuit 16 electrically connects the light detection module 15 for the working condition of the light source module 13 is detected and reported It is alert.

Wherein, as shown in figure 3, Fig. 3 is a kind of structural representation of optical sender light source module provided in an embodiment of the present invention Figure, the light source module 13 include light emitting diode 111, lead 113 and lens 112；

Wherein, the lead 113 is used for the positive and negative pin for connecting the light emitting diode 111 and the light source module 13 Input；The lens 112 are arranged in the light-emitting area of the light emitting diode 111 for assembling and transmitting the light letter Number.

Wherein, the light emitting diode 111 is the LED based on ledge structure, and the LED includes：

Single crystal Si substrate；

First Ge layers, it is arranged at the single crystal Si substrate surface；

Wherein, the first Ge layers include Ge inculating crystal layers, Ge body layers and the 2nd Ge layers；Wherein, the Ge body layers are set The Ge inculating crystal layers upper surface is placed in, the 2nd Ge layers are arranged at the Ge body layers upper surface.

Wherein, the optical source wavelength that the LED based on ledge structure is sent is 1550nm.

Embodiment two

Fig. 4 is refer to, Fig. 4 is a kind of light emitting diode for optical sender light source module provided in an embodiment of the present invention Structural representation；Wherein, the light emitting diode is the LED based on ledge structure, including：

Single crystal Si substrate 21；

First Ge layers 22, it is arranged at the surface of single crystal Si substrate 21；

Ge base stations stage structure 23, it is arranged at the center position on the surface of the first Ge layers 22；

Positive electrode 24, it is arranged at the upper surface of the first Ge layers 22 and positioned at the opening position of the both sides of ledge structure 23；

Negative electrode 25, it is arranged at the upper surface of the ledge structure 23；

Passivation layer 26, the upper surface of the first Ge layers 22 and the ledge structure 23 is arranged at, it is described luminous to be formed Diode 20.

Wherein, the first Ge layers 22 include crystallization Ge inculating crystal layers, crystallization Ge body layers and the 2nd Ge layers；Wherein, it is described Ge body layers are arranged at the Ge inculating crystal layers upper surface, and the 2nd Ge layers are arranged at the Ge body layers upper surface.

Preferably, the thickness of the crystallization Ge inculating crystal layers is 40~50nm；The thickness of the crystallization Ge body layers be 150~ 250nm；The thickness of the 2nd Ge layers is 400-450nm.

Wherein, the crystallization Ge inculating crystal layers and the crystallization Ge body layers are by LRC (laser again crystallization) technique crystallization Formed after processing.

The Crystallizing treatment includes：

Step 1, by including the whole of the single crystal Si substrate 21, the crystallization Ge inculating crystal layers and the crystallization Ge body layers Backing material is heated to 700 DEG C；

Step 2, using whole backing material described in LRC technique crystallization, wherein, optical maser wavelength 808nm, laser facula chi Very little 10mm × 1mm, laser power 1.5kW/cm², laser traverse speed 25mm/s；

Whole backing material described in step 3, natural cooling.

Please with further reference to Fig. 5, Fig. 5 is a kind of LRC processes schematic diagram provided in an embodiment of the present invention, LRC techniques I.e. crystallization (Laser Re-Crystallization, abbreviation LRC) technique is a kind of method of thermal induced phase transition crystallization to laser again, is led to Laser heat treatment is crossed, makes Ge epitaxial layers fusing recrystallization on Si substrates, laterally discharges the dislocation defects of Ge epitaxial layers, can not only obtain The Ge epitaxial layers of high quality are obtained, simultaneously as LRC techniques accurately control crystalline areas, are on the one hand avoided in common process Ge/Si exclusive problems between Si substrates and Ge epitaxial layers, material interface characteristic is good between another aspect Ge/Si.

Wherein, the first Ge layers 22 are p-type, and doping concentration is 5 × 10¹⁸cm^-3。

Wherein, the Ge base stations stage structure 23 includes GeSn layers and the 3rd Ge layers；Wherein, the 3rd Ge layers are arranged at institute State GeSn layers upper surface.

Preferably, the thickness of the GeSn layers is 150~200nm.

Preferably, the 3rd Ge layers are N-type, and thickness is 40~60nm, doping concentration is 1 × 10¹⁹cm^-3。

Preferably, the positive electrode 24 and the negative electrode 25 are Cr or Au materials, and its thickness is 150~200nm.

The present invention can effectively reduce the dislocation density of Ge/Si void substrates by continuous laser auxiliary crystallization Ge/Si void substrates And surface roughness, the quality of follow-up GeSn epitaxial layers is remarkably improved, and then be remarkably improved the performance of luminescent device.

The optical sender of the present invention is used based on the LED of ledge structure as light emitting diode, can significantly improve light source Luminous efficiency, and laser diode can be replaced, reduce the cost of optical sender.

Embodiment three

Fig. 6 is referred to, Fig. 6 is the structural representation of another light emitting diode provided in an embodiment of the present invention.This is luminous Diode 40 includes single crystal Si substrate 41, p-type crystallization Ge layers 42, undoped GeSn layers 43, N-type Ge layers 44 and metal electrode 45。

Wherein p-type crystallization Ge layers 42 include：Crystallization Ge inculating crystal layers 401, crystallization Ge body layers 402 and the first Ge layers 403.

The embodiment of the present invention, have Ge epitaxial layer qualities under the conditions of solving the problems, such as existing process low using LRC techniques.Together When, because LRC techniques accurately control crystalline areas, it can effectively reduce the dislocation density, surface roughness, interface of Ge void substrates Defect, the quality of Ge void substrates is lifted so as to obtain higher-quality GeSn epitaxial layers, and then be remarkably improved luminescent device Luminous efficiency, improve the luminescent properties of optical sender.

Example IV

Continue referring to one kind that Fig. 7 a- Fig. 7 l, Fig. 7 a- Fig. 7 l are the embodiment of the present invention and be used for optical sender light source module Light emitting diode preparation technology schematic diagram, the preparation method comprises the following steps：

S101, single crystal Si substrate 001 is chosen, as shown in Figure 5 a；

S102, at a temperature of 275 DEG C~325 DEG C, grow 40~50nm's on single crystal Si substrate 001 using CVD techniques Ge inculating crystal layers 002, as shown in Figure 5 b；

Preferably, the thickness of Ge inculating crystal layers 002 is 50nm；

S103, at a temperature of 500 DEG C~600 DEG C, using CVD techniques in the 150~250nm of superficial growth of Ge inculating crystal layers 002 Ge body layers 003, as shown in Figure 5 c；

Preferably, the thickness of Ge body layers 003 is 200nm；

S104, using CVD techniques 100~150nm SiO are deposited on the surface of Ge body layers 003₂Layer 004, such as Fig. 5 d institutes Show；

Preferably, SiO₂The thickness of layer 004 is 120nm；

S105, single crystal Si substrate 001, Ge inculating crystal layers 002, Ge body layers 003 and SiO will be included₂The whole substrate of layer 004 Material is heated to 700 DEG C, continuous to use the whole backing material of LRC technique crystallization, and wherein optical maser wavelength is 808nm, laser facula Size 10mm × 1mm, laser power 1.5kW/cm², laser traverse speed 25mm/s, the whole backing material of natural cooling；

S106, utilize dry etch process etching SiO₂Layer 004, the Ge layers 005 formed after laser crystallization, wherein, Ge layers 005 represents the general designation of the Ge inculating crystal layers 002 after laser crystallization and Ge body layers 003, as depicted in fig. 5e；

S107, at 300-400 DEG C of temperature, grow 400- on the Ge layers 005 after LRC technique crystallization using CVD techniques Ge layers 006 thick 450nm, as shown in figure 5f；

Preferably, the thickness of Ge layers 006 is 450nm；

S108, using ion implantation technology the Ge layers 005 after Ge layers 006 and LRC technique crystallization are doped, doping is dense Spend for 5 × 10¹⁸cm^-3, form p-type crystallization Ge layers 007 and (watched for the ease of diagram, by the Ge layers 005 and crystallization after crystallization The Ge layers 006 grown afterwards are collectively referred to as p-type crystallization Ge layers 007), annealed afterwards, as shown in fig. 5g；

S109, in H₂Less than 350 DEG C are reduced the temperature in atmosphere, SnCl₄And GeH₄Respectively as Sn and Ge sources, Sn groups are mixed Divide and reach 8%.The thick undoped GeSn layers 008 of 150~200nm are grown, as shown in figure 5h；

Preferably, the thickness of GeSn layers 008 is 200nm；

At S110, followed by preceding identical temperature, continue to deposit Ge layers.P doping concentrations are 1 × 10¹⁹cm^-3.Use N₂As delivery Gas can improve growth rate, 1% PH₃As P doped sources.The thick N-type Ge Rotating fields 009 of 40~60nm are grown, are such as schemed Shown in 5i；

Preferably, the thickness of Ge Rotating fields 009 is 50nm；

S112, at room temperature, uses HCl:H₂O₂:H₂O=1:1:20 chemical solvent, carried out with steady rate 100nm/min Mesa etch, etching it is deep-controlled in 500nm, expose p-type crystallization Ge layers 007 and do metal contact, as shown in figure 5j；

S111, using plasma enhancing chemical vapor deposition techniques, SiO thick 150~200nm of deposit₂Passivation layer 010, isolation table top is made electrical contact with the external world, and the SiO of designated area is fallen with etching technics selective etch₂Contact hole is formed, is such as schemed Shown in 5k；

Preferably, SiO₂The thickness of passivation layer 010 is 150nm；

S112, using electron beam evaporation process, Cr or Au layers 011 thick 150~200nm of deposit, carved using etching technics The metal Cr or Au of selective eating away designated area, planarization process is carried out using chemically mechanical polishing (CMP), such as Fig. 5 l institutes Show；

Preferably, the thickness of Cr or Au layers 011 is 150nm.

Embodiment five

Fig. 8 is continued referring to, Fig. 8 is a kind of optical fiber telecommunications system structural representation provided in an embodiment of the present invention；Wherein Optical fiber telecommunications system structure includes：

Optical sender 51, wave multiplexer 52, circulator 53, optical fiber 54, sensing light signal transmitter 55, sensing optical signal receive Resolver 56.

Sensing light signal transmitter 55 will sense optical signal and send to wave multiplexer 52, and optical sender 51 is by caused optical signal Send to wave multiplexer 52, wave multiplexer 52 and sent after the sensing optical signal and the optical signal are carried out into multiplex processing to circulator 53 and optical fiber 54.Sensing optical signal scatters backward in optical fiber 54, and back scattering sensing optical signal passes through the return of circulator 53 Input sensing optical signal in port receives resolver 56, and sensing optical signal receives resolver 56 and receives the sense light that scattering returns Signal and dissection process.

Wherein, sensing light signal transmitter 55 includes laser transmitting set and CD-ROM driver.

Wherein, sensing optical signal reception resolver 56 includes optical-electrical converter and data collection processor.

Wherein, optical sender 51 is used to convert the electrical signal to optical signal, and information is transmitted in light；51 turns of optical sender The wavelength of optical signal changed is 1550nm；The optical sender that optical sender 51 is provided using above-described embodiment.

Wherein, wave multiplexer 52 uses wavelength-division multiplex wave multiplexer, by optical signal caused by sensing optical signal and optical sender 51 Multiplex is carried out, is sent to circulator 53；

Wherein, circulator 53 uses the circulator 53 of optical fiber 54, is transmitted for multiplex to be sent in optical fiber 54, and The sensing optical signal of the back scattering returned in reception optical fiber 54, transmit to sensing optical signal and receive resolver 56；

Wherein, laser transmitting set is used to produce initial sensing optical signal, is wavelength 1064nm, power 0-40mW continuous light Signal；

Wherein, CD-ROM driver, for Electro-optical Modulation and it is driven, by continuous optical signal modulation caused by laser transmitting set Into required pulsed optical signals；

Wherein, optical-electrical converter, scattering sensing optical signal backward is received first, using optical fiber 54 and Transflective filter plate group Close, back scattering is sensed to the Rayleigh scattering light in optical signal, Stokes ratio, anti-Stokes scattering light etc. and isolated Come；Secondly, back scattering sensing optical signal is detected using high sensitivity APD avalanche diodes, back scattering sense light is believed Number converted electrical number；

Wherein, data collection processor uses high-speed data acquisition chip and high speed FPGA process chips, to the electricity of conversion Signal is analyzed and handled；

Wherein, analysis result can be preserved and shown；

The electric signal of information to be sent is converted into optical signal by optical sender 51, is injected into optical fiber 54 and is transmitted.Light The optical signal that emitter 51 exports is injected into optical fiber 54 after wave multiplexer 52 and circulator 53 to be transmitted.Sense optical signal Transmitter 55 sends the continuous optical signal of certain power, defeated by an input port of wave multiplexer 52 after being driven by modulation Enter, be input to after the multiplex of wave multiplexer 52 by the input port of circulator 53 in optical fiber 54.Simultaneous transmission two in optical fiber 54 The optical signal of different wave length.Sensing optical signal can produce rear orientation light in optical fiber 54, and back scattering sensing optical signal passes through The return port of circulator 53 is input to sensing optical signal and receives resolver 56, and rear orientation light is divided, filtered, photoelectricity Conversion and dissection process.The different rear orientation light such as Rayleigh, Brillouin, Raman is extracted according to different measurement parameters Spectrum, changes into electric signal, using high-speed data acquisition chip and high speed FPGA process chips, to conversion using photodetection principle Electric signal is analyzed and handled, and draws corresponding Fibre Optical Sensor data.The result data of analysis can be carried out in a computer The display and storage of data.

Embodiments of the invention realize communication and sensing simultaneously in same root optical fiber, have saved fiber resource, significantly Reduce production cost；The system integrated level is high, can be highly integrated by communication and sensing device, reduces the complicated journey of system Degree, it is easy to daily be installed on maintenance.

To sum up, specific case used herein to the structure of a kind of optical sender of the present invention and optical fiber telecommunications system and Embodiment is set forth, and the explanation of above example is only intended to help the method and its core concept for understanding the present invention； Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, can in specific embodiments and applications There is change part, to sum up, this specification content should not be construed as limiting the invention, and protection scope of the present invention should be with appended Claim be defined.

Claims

A kind of 1. optical sender, it is characterised in that including：

Input circuit, for carrying out scrambler and encoding operation to the electric signal of input；

Drive circuit, the input circuit is electrically connected, for the electric signal after scrambler and coding to be modulated, formed and adjusted Signal processed；

Light source module, the drive circuit is electrically connected, for driving the light source module according to the modulated signal and producing light Signal；

Temperature-control circuit, the light source module is electrically connected, for stablizing the operating temperature of the light source module.
2. optical sender according to claim 1, it is characterised in that the input circuit includes：What is be sequentially connected electrically is defeated Incoming interface, equalizer amplifier, code conversion module, Multiplexing module, scrambler coding module.
3. optical sender according to claim 2, it is characterised in that the input circuit also includes：Clock Extraction module； Wherein,

The input of the Clock Extraction module electrically connects the equalizer amplifier, and output end is electrically connected the code conversion Module, the Multiplexing module, the scrambler coding module.
4. optical sender according to claim 1, it is characterised in that also including light detection module and alarm output circuit； Wherein,

The light detection module is used for the optical signal for detecting light source module output, described in the alarm output circuit electrical connection Light detection module is for being detected and alarmed to the working condition of the light source module.
5. optical sender according to claim 1, it is characterised in that the light source module includes light emitting diode, lead And lens；Wherein, the lead is used for input of the positive and negative pin with the light source module for connecting the light emitting diode；Institute Lens are stated to be arranged in the light-emitting area of the light emitting diode for assembling and transmitting the optical signal.
6. optical sender according to claim 5, it is characterised in that the light emitting diode is based on ledge structure LED, the LED include：

Single crystal Si substrate；

First Ge layers, it is arranged at the single crystal Si substrate surface；

Ge base station stage structures, it is arranged at the center position of the first Ge layer surfaces；

Positive electrode, it is arranged at the upper surface of the first Ge layers and positioned at the opening position of ledge structure both sides；

Negative electrode, it is arranged at the upper surface of the ledge structure；

Passivation layer, it is arranged at the upper surface of the first Ge layers and the ledge structure.
7. optical sender according to claim 6, it is characterised in that the first Ge layers include Ge inculating crystal layers, Ge main bodys Layer and the 2nd Ge layers；Wherein, the Ge body layers are arranged at the Ge inculating crystal layers upper surface, and the 2nd Ge layers are arranged at described Ge body layers upper surface.
8. optical sender according to claim 8, it is characterised in that described in the LED based on ledge structure is sent Optical source wavelength is 1550nm.
A kind of 9. optical fiber telecommunications system, it is characterised in that including：Sense light signal transmitter, optical sender, wave multiplexer, annular Device, sensing optical signal receive resolver and optical fiber；

Wherein, the sensing light signal transmitter is electrically connected to the wave multiplexer so that sensing optical signal is sent to the multiplex Device, the optical sender are electrically connected to the wave multiplexer so that caused optical signal is sent to the wave multiplexer, the wave multiplexer electricity Connect the circulator with will it is described sensing optical signal and the optical signal carry out multiplex processing after formed multiplex signal send to The circulator, the circulator are electrically connected to the optical fiber so that the multiplex signal is sent to described in the optical fiber and reception The sensing optical signal of return is scattered in optical fiber, the sensing optical signal receives resolver and is electrically connected to the circulator to connect Receive the sensing optical signal that scattering returns and dissection process；Wherein, the optical sender is claim 1-8 any described Emitter.
10. optical fiber telecommunications system according to claim 9, it is characterised in that the sensing light signal transmitter includes swashing Optical transmitter and CD-ROM driver, the sensing optical signal, which receives resolver, includes optical-electrical converter and data collection processor.