CN107346965A - Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function - Google Patents

Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function Download PDF

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Publication number
CN107346965A
CN107346965A CN201710586508.8A CN201710586508A CN107346965A CN 107346965 A CN107346965 A CN 107346965A CN 201710586508 A CN201710586508 A CN 201710586508A CN 107346965 A CN107346965 A CN 107346965A
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CN
China
Prior art keywords
circuit
current
mosfet
current limliting
control circuits
Prior art date
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Pending
Application number
CN201710586508.8A
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Chinese (zh)
Inventor
刘青
朱洪雨
张炜玮
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SHENZHEN AEROSPACE NEW SOURCE TECHNOLOGY Co Ltd
Shenzhen Academy of Aerospace Technology
Original Assignee
SHENZHEN AEROSPACE NEW SOURCE TECHNOLOGY Co Ltd
Shenzhen Academy of Aerospace Technology
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Application filed by SHENZHEN AEROSPACE NEW SOURCE TECHNOLOGY Co Ltd, Shenzhen Academy of Aerospace Technology filed Critical SHENZHEN AEROSPACE NEW SOURCE TECHNOLOGY Co Ltd
Priority to CN201710586508.8A priority Critical patent/CN107346965A/en
Publication of CN107346965A publication Critical patent/CN107346965A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28Modifications for introducing a time delay before switching
    • H03K17/284Modifications for introducing a time delay before switching in field effect transistor switches

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  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention provides a kind of current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function, including MOSFET, current sampling circuit, over-current detection circuit, current limliting delay circuit, overcurrent protection breaking circuit, MOSFET control circuits, current-limiting circuit, wherein, the output end of the current sampling circuit is connected with the over-current detection circuit, the output end of the over-current detection circuit respectively with the current-limiting circuit, current limliting delay circuit connects, the output end of the current limliting delay circuit is connected with the overcurrent protection breaking circuit, the output end of the overcurrent protection breaking circuit is connected with the MOSFET control circuits, the output end of the current-limiting circuit is connected with the MOSFET control circuits.The beneficial effects of the invention are as follows:Both the circuit without extra increase instruction, short-time current surge triggering overcurrent protection when can prevent from opening again and caused by can not open failure.

Description

Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function
Technical field
The present invention relates to the current limliting delay of on-off circuit, more particularly to a kind of repeatable triggering for possessing excessively stream memory function Turn off on-off circuit.
Background technology
The actuator that relay is connected and turned off with load access path as power supply is commonly used for switching function, in circuit Part.The switch of relay is physics break-make, if load has very important inductance for interface(Or stray inductance), electric capacity(Or post Raw electric capacity), very high du/dt or di/dt impacts are had in the moment turned on and off, produce larger electromagnetic interference, sometimes When can produce electric arc, to suitable relay selection be very big test.And the bigger relay size of circulating current is bigger, it is elected to The relay of suitable current is selected, possible size is again excessive.The control signal of magnetic latching relay provides logical for relay line bag Road, therefore need to design OC instructions, the instruction of data signal need additional OC instruction circuits that relay can just reliably performed to refer to Order.
For overcurrent protection function, overcurrent protection is when load appearance short circuit or other failures, causes load current to exceed The connection that normal value is cut off the electricity supply with load, the measure of isolated fault.It is general to use fuse as protection device, fuse Using that need to be serially connected between power supply and load, reach rated value when the fusing for flowing through electric current and time integrates I2t, fuse melts Disconnected, power supply disconnects with load fault.Fuse is disposable safeguard measure, can only be by the fusing that more renews after fusing Device, can just make circuit together with.For the application scenario such as space product that can not be repaired, the use of fuse needs cautiously.For Maintenance causes the occasion of very big economic loss, and fuse scheme also seems that cost is very high.
Therefore, a kind of on-off circuit how is provided, both the circuit without extra increase instruction, short when can prevent from opening again When current surge triggering overcurrent protection and caused by can not open failure, be that those skilled in the art's technology urgently to be resolved hurrily is asked Topic.
The content of the invention
In order to solve the problems of the prior art, the invention provides a kind of repeatable triggering for possessing excessively stream memory function Current limliting time delayed turn-off on-off circuit.
The invention provides a kind of current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function, bag Include MOSFET, current sampling circuit, over-current detection circuit, current limliting delay circuit, overcurrent protection breaking circuit, MOSFET control electricity Road, current-limiting circuit, wherein, the output end of the current sampling circuit is connected with the over-current detection circuit, the over-current detection The output end of circuit is connected with the current-limiting circuit, current limliting delay circuit respectively, the output end of the current limliting delay circuit and institute The connection of overcurrent protection breaking circuit is stated, the output end of the overcurrent protection breaking circuit is connected with the MOSFET control circuits, The output end of the current-limiting circuit is connected with the MOSFET control circuits, and the MOSFET control circuits connect with the MOSFET Connect, Current limited Control is carried out to the MOSFET control circuits by the current-limiting circuit, passes through the overcurrent protection breaking circuit Road carries out overcurrent protection shut-off control to the MOSFET control circuits.
As a further improvement on the present invention, the current limliting time delayed turn-off on-off circuit also includes instruction interface circuit, institute The output end for stating instruction interface circuit is connected with the MOSFET control circuits, by the instruction interface circuit to described MOSFET control circuits carry out switch control.
As a further improvement on the present invention, the current limliting time delayed turn-off on-off circuit also includes auxiliary power supply circuit and electricity Source, the auxiliary power supply circuit and power supply are connected with the MOSFET respectively.
As a further improvement on the present invention, the MOSFET control circuits are connected with the grid of the MOSFET.
As a further improvement on the present invention, the current sampling circuit is connected with sampling resistor, the sampling resistor with The source electrode connection of the MOSFET.
As a further improvement on the present invention, the MOSFET is N-type.
The beneficial effects of the invention are as follows:Pass through such scheme, on the one hand, by actuators of the MOSFET as switch motion Part, the break-make available for large current load control, and due to MOSFET itself drive characteristics, switch on-off caused Current Voltage Change all gradually changes, and current-limiting function can make the surge current in opening process be limited in fixed value, reduces to negative The rush of current of load, the control of switch are controlled by logic level, the circuit without extra increase instruction;On the other hand, can prevent When only opening short-time current surge triggering overcurrent protection and caused by can not open failure.
Brief description of the drawings
Fig. 1 is a kind of showing for current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function of the invention It is intended to.
Fig. 2 is to invent a kind of current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function in short-term Punching uses load current waveform figure before and after current limiting switch on electric current.
Fig. 3 be invent a kind of current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function it is long when Punching uses load current waveform figure before and after current limiting switch on electric current.
Embodiment
The invention will be further described for explanation and embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function, including MOSFET(Metal-Oxide Semiconductor field-effect transistor)900th, current sampling circuit 100, over-current detection circuit 200, limit Delay circuit 300, overcurrent protection breaking circuit 400, MOSFET control circuits 600, current-limiting circuit 500 are flowed, wherein, the electric current The output end of sample circuit 100 is connected with the over-current detection circuit 200, the output end difference of the over-current detection circuit 200 It is connected with the current-limiting circuit 500, current limliting delay circuit 300, output end and the excessively stream of the current limliting delay circuit 300 are protected Shield breaking circuit 400 is connected, and the output end of the overcurrent protection breaking circuit 400 is connected with the MOSFET control circuits 600, The output end of the current-limiting circuit 500 is connected with the MOSFET control circuits 600, the MOSFET control circuits 600 and institute MOSFET900 connections are stated, Current limited Control is carried out to the MOSFET control circuits 600 by the current-limiting circuit 500, passes through institute State the tunnel of overcurrent protection breaking circuit 400 and overcurrent protection shut-off control is carried out to the MOSFET control circuits 600.
As shown in figure 1, the current limliting time delayed turn-off on-off circuit also includes instruction interface circuit 700, the instruction interface The output end of circuit 700 is connected with the MOSFET control circuits 600, by the instruction interface circuit 700 to described MOSFET control circuits 600 carry out switch control.
As shown in figure 1, the current limliting time delayed turn-off on-off circuit also includes auxiliary power supply circuit 800 and power supply, it is described auxiliary Power supply circuit 800 and power supply is helped to be connected respectively with the MOSFET900.
As shown in figure 1, the MOSFET control circuits are connected with the grid of the MOSFET.
As shown in figure 1, the current sampling circuit 100 is connected with sampling resistor, the sampling resistor with it is described MOSFET900 source electrode connection.
A kind of as shown in figure 1, current limliting time delayed turn-off of repeatable triggering for possessing excessively stream memory function provided by the invention On-off circuit can be divided into three parts from major function:Instruction control is opened and turned off;Reach current-limiting circuit 500 after cut-off current Form current limliting loop;Reach the calculating of the time after cut-off current and compare, perform overcurrent protection(If the duration is less than time delay Setting value, then do not protect, timing resets), turn off MOSFET900.Circuit block diagram is as shown in Figure 1, it is seen that MOSFET control circuits 600 receive three signals, and respectively from instruction interface circuit, overcurrent protection shut-off, current-limiting circuit, these three signals come from three Control logic
As shown in Figure 2,3, when rushing the time on electric current less than setting delay time, current limiting switch can limit current to setting Value, after impact terminates, recover minimum impedance switch connected state.When rushing the time on electric current more than setting delay time, current limliting Switch is limited current in setting value, is turned off MOSFET900 after maintaining setting delay time, is disconnected the connection with load.
MOSFET control circuits 600 are voltage-controlled type devices, and VGS voltages determine its working condition.This patent is made from NMOS For switching device, because NMOS is small compared with PMOS conduction impedance, reduce transmission loss and current limliting heat consumption.MOSFET control circuits 600 Receive 3 control signals:Switching control instruction, overcurrent protection shut-off and Current limited Control signal.When receiving provisioning instruction and nothing During other two signals, MOSFET control circuits 600 provide 10V or so VGS driving voltages, make VDS open-minded, and conduction impedance It is minimum.If when opening or after opening, load current exceeds cut-off current, under Current limited Control signal function, MOSFET control circuits 600 reduce VGS voltages, establish Current limited Control loop, make output current control in cut-off current.If the time beyond cut-off current is more than Current limliting delay time, then overcurrent protection cut-off signals VGS voltages is down to 0V or so, MOSFET900 shut-offs.
Current-limiting function 500 is realized by the constant current linear sources on floating ground, because using feedback control loop, so need to consider stability, is increased Add compensation network.Because linear sources are by reducing VGS voltages, then increase VDS voltages, the feedback form for reducing load current is real It is existing, therefore MOSFET need to be selected according to current limliting time and cut-off current, paralleling MOS FET is considered as during high current.
When overcurrent protection breaking circuit 400 detects that excessively stream occurs, timing circuit begins to timing, until reaching setting Delay time, cut-off signals are triggered, rapidly by VGS voltage pull-downs.
A kind of current limliting time delayed turn-off on-off circuit of repeatable triggering for possessing excessively stream memory function provided by the invention, by Performers of the MOSFET900 as switch motion, the break-make available for large current load control, because MOSFET itself drives Characteristic, Current Voltage change all gradually changes caused by switching on-off, and current-limiting function can make the wave in opening process Gush electric current and be limited in fixed value, reduce the rush of current to load.The control of switch is controlled by logic level, without extra Increase the circuit of instruction.
A kind of current limliting time delayed turn-off on-off circuit of repeatable triggering for possessing excessively stream memory function provided by the invention, protect Protective function acts on sequential:Detection flows through electric current, and the electric current more than the cut-off current of setting can be pulled low to cut-off current, maintain one The delay time of setting, it is then powered off switching.If in delay time, load faulty recovers, and demand current reduces, then recovers Normal power supply.Pass through the setting to cut-off current and delay time, in that case it can be decided that work under which current value and open how long afterwards Shut-off, this is consistent with the selection in design to fuse.Switched because being realized using electronic circuit, be reusable 's.It is the current foldback circuit turned off relative in general excessively stream, short-time current surge triggered when the present invention can prevent from opening Stream protection and caused by can not open failure.
A kind of current limliting time delayed turn-off on-off circuit of repeatable triggering for possessing excessively stream memory function provided by the invention, fit For direct current supply, power distribution circuit, alternative relay realizes the break-make of circuit, substitutes fuse and realizes overcurrent protection, has After excessively stream occurs, the function of current limliting and delay protection.Load as resistance, electric capacity(Or containing electric capacity), inductance(Or containing inductance)Field Close and can be used.There is good protective capability to the most severe over current fault of load short circuits.Because of repeatable triggering, so can be used for The overcurrent protection of inconvenience maintenance occasion.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention, On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's Protection domain.

Claims (6)

  1. A kind of 1. current limliting time delayed turn-off on-off circuit for the repeatable triggering for possessing excessively stream memory function, it is characterised in that:Including MOSFET, current sampling circuit, over-current detection circuit, current limliting delay circuit, overcurrent protection breaking circuit, MOSFET control electricity Road, current-limiting circuit, wherein, the output end of the current sampling circuit is connected with the over-current detection circuit, the over-current detection The output end of circuit is connected with the current-limiting circuit, current limliting delay circuit respectively, the output end of the current limliting delay circuit and institute The connection of overcurrent protection breaking circuit is stated, the output end of the overcurrent protection breaking circuit is connected with the MOSFET control circuits, The output end of the current-limiting circuit is connected with the MOSFET control circuits, and the MOSFET control circuits connect with the MOSFET Connect, Current limited Control is carried out to the MOSFET control circuits by the current-limiting circuit, passes through the overcurrent protection breaking circuit Road carries out overcurrent protection shut-off control to the MOSFET control circuits.
  2. 2. the current limliting time delayed turn-off on-off circuit of the repeatable triggering according to claim 1 for possessing excessively stream memory function, It is characterized in that:The current limliting time delayed turn-off on-off circuit also includes instruction interface circuit, the output of the instruction interface circuit End is connected with the MOSFET control circuits, and switch control is carried out to the MOSFET control circuits by the instruction interface circuit System.
  3. 3. the current limliting time delayed turn-off on-off circuit of the repeatable triggering according to claim 1 for possessing excessively stream memory function, It is characterized in that:The current limliting time delayed turn-off on-off circuit also includes auxiliary power supply circuit and power supply, the auxiliary power supply circuit It is connected respectively with the MOSFET with power supply.
  4. 4. the current limliting time delayed turn-off on-off circuit of the repeatable triggering according to claim 1 for possessing excessively stream memory function, It is characterized in that:The MOSFET control circuits are connected with the grid of the MOSFET.
  5. 5. the current limliting time delayed turn-off on-off circuit of the repeatable triggering according to claim 1 for possessing excessively stream memory function, It is characterized in that:The current sampling circuit is connected with sampling resistor, and the sampling resistor is connected with the source electrode of the MOSFET.
  6. 6. the current limliting time delayed turn-off on-off circuit of the repeatable triggering according to claim 1 for possessing excessively stream memory function, It is characterized in that:The MOSFET is N-type.
CN201710586508.8A 2017-07-18 2017-07-18 Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function Pending CN107346965A (en)

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CN201710586508.8A CN107346965A (en) 2017-07-18 2017-07-18 Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function

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Application Number Priority Date Filing Date Title
CN201710586508.8A CN107346965A (en) 2017-07-18 2017-07-18 Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of excessively stream memory function

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112448703A (en) * 2019-08-27 2021-03-05 杭州海康威视数字技术股份有限公司 Switching device
CN112505394A (en) * 2020-11-17 2021-03-16 北京润科通用技术有限公司 Overcurrent detection method and device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1157187A (en) * 1997-08-26 1999-03-02 Sanyo Electric Co Ltd Protection circuit for driving circuit
US20020080544A1 (en) * 2000-12-22 2002-06-27 John Pellegrino Apparatus and methods for limiting electrical current in circuit breaker applications
JP2005323489A (en) * 2004-04-08 2005-11-17 Yazaki Corp Protective circuit
JP2011041393A (en) * 2009-08-10 2011-02-24 Fujitsu Ten Ltd Output block circuit and electronic apparatus
CN103208774A (en) * 2013-05-02 2013-07-17 石家庄迅能电子科技有限公司 Intrinsic-safety power supply short-circuit protection circuit
CN105717972A (en) * 2014-12-17 2016-06-29 富士电机株式会社 Semiconductor device and current limiting method
CN207251571U (en) * 2017-07-18 2018-04-17 深圳市航天新源科技有限公司 Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of overcurrent memory function

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1157187A (en) * 1997-08-26 1999-03-02 Sanyo Electric Co Ltd Protection circuit for driving circuit
US20020080544A1 (en) * 2000-12-22 2002-06-27 John Pellegrino Apparatus and methods for limiting electrical current in circuit breaker applications
JP2005323489A (en) * 2004-04-08 2005-11-17 Yazaki Corp Protective circuit
JP2011041393A (en) * 2009-08-10 2011-02-24 Fujitsu Ten Ltd Output block circuit and electronic apparatus
CN103208774A (en) * 2013-05-02 2013-07-17 石家庄迅能电子科技有限公司 Intrinsic-safety power supply short-circuit protection circuit
CN105717972A (en) * 2014-12-17 2016-06-29 富士电机株式会社 Semiconductor device and current limiting method
CN207251571U (en) * 2017-07-18 2018-04-17 深圳市航天新源科技有限公司 Possesses the current limliting time delayed turn-off on-off circuit of the repeatable triggering of overcurrent memory function

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112448703A (en) * 2019-08-27 2021-03-05 杭州海康威视数字技术股份有限公司 Switching device
CN112448703B (en) * 2019-08-27 2023-07-28 杭州海康威视数字技术股份有限公司 Switching device
CN112505394A (en) * 2020-11-17 2021-03-16 北京润科通用技术有限公司 Overcurrent detection method and device
CN112505394B (en) * 2020-11-17 2022-09-20 北京润科通用技术有限公司 Overcurrent detection method and device

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