CN107346774A - 一种单片集成的紫外焦平面器件及其制备方法 - Google Patents
一种单片集成的紫外焦平面器件及其制备方法 Download PDFInfo
- Publication number
- CN107346774A CN107346774A CN201610292166.4A CN201610292166A CN107346774A CN 107346774 A CN107346774 A CN 107346774A CN 201610292166 A CN201610292166 A CN 201610292166A CN 107346774 A CN107346774 A CN 107346774A
- Authority
- CN
- China
- Prior art keywords
- fpa
- single chip
- substrate
- chip integrated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000000407 epitaxy Methods 0.000 claims abstract description 32
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 80
- 239000011241 protective layer Substances 0.000 claims description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292166.4A CN107346774A (zh) | 2016-05-05 | 2016-05-05 | 一种单片集成的紫外焦平面器件及其制备方法 |
| PCT/CN2016/083874 WO2017190392A1 (fr) | 2016-05-05 | 2016-05-30 | Dispositif à groupement focal ultraviolet intégré monopuce, et son procédé de préparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292166.4A CN107346774A (zh) | 2016-05-05 | 2016-05-05 | 一种单片集成的紫外焦平面器件及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107346774A true CN107346774A (zh) | 2017-11-14 |
Family
ID=60202606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610292166.4A Pending CN107346774A (zh) | 2016-05-05 | 2016-05-05 | 一种单片集成的紫外焦平面器件及其制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107346774A (fr) |
| WO (1) | WO2017190392A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314561B (zh) * | 2021-05-27 | 2023-05-09 | 复旦大学 | 一种深紫外波段发光单片集成器件及制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481585A (zh) * | 2000-10-19 | 2004-03-10 | ���Ӱ뵼������˾ | 制作和cmos电路集成在一起的异质结光电二极管的方法 |
| CN101231193A (zh) * | 2008-02-01 | 2008-07-30 | 中国电子科技集团公司第四十四研究所 | 单片式可见光/红外光双光谱焦平面探测器 |
| CN101661943A (zh) * | 2008-08-26 | 2010-03-03 | 北京大学 | 一种单片集成紫外图像传感器及其像素单元以及制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5625210A (en) * | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| FR2966978B1 (fr) * | 2010-11-03 | 2016-04-01 | Commissariat Energie Atomique | Detecteur de rayonnement visible et proche infrarouge |
| CN103594468B (zh) * | 2013-11-29 | 2016-08-31 | 电子科技大学 | 一种快速光电探测器 |
| CN104362199B (zh) * | 2014-11-19 | 2017-01-04 | 中国电子科技集团公司第二十四研究所 | 用于单片光探测与电信号处理集成器件的基材结构及其形成方法 |
| CN104505410B (zh) * | 2014-12-31 | 2017-06-27 | 杭州士兰微电子股份有限公司 | 光电二极管、紫外探测器集成电路及其制造方法 |
-
2016
- 2016-05-05 CN CN201610292166.4A patent/CN107346774A/zh active Pending
- 2016-05-30 WO PCT/CN2016/083874 patent/WO2017190392A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481585A (zh) * | 2000-10-19 | 2004-03-10 | ���Ӱ뵼������˾ | 制作和cmos电路集成在一起的异质结光电二极管的方法 |
| CN101231193A (zh) * | 2008-02-01 | 2008-07-30 | 中国电子科技集团公司第四十四研究所 | 单片式可见光/红外光双光谱焦平面探测器 |
| CN101661943A (zh) * | 2008-08-26 | 2010-03-03 | 北京大学 | 一种单片集成紫外图像传感器及其像素单元以及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017190392A1 (fr) | 2017-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9941319B2 (en) | Semiconductor and optoelectronic methods and devices | |
| US9786710B2 (en) | Image sensor device with sub-isolation in pixels | |
| JP5420656B2 (ja) | 裏面トレンチを有する裏面照射型イメージセンサ | |
| US9123608B2 (en) | Backside illuminated CMOS image sensor | |
| CN105374834A (zh) | 制作单光子雪崩二极管成像传感器的方法 | |
| US9197804B1 (en) | Semiconductor and optoelectronic devices | |
| JP2012146920A (ja) | 固体撮像素子 | |
| US9455369B2 (en) | Infra red detectors and methods of manufacturing infra red detectors using MOVPE | |
| US20180342543A1 (en) | Backside illuminated cmos image sensor and method of fabricating the same | |
| US7777229B2 (en) | Method and apparatus for reducing smear in back-illuminated imaging sensors | |
| CN102664185A (zh) | Cmos图像传感器及其制作方法 | |
| US20180226531A1 (en) | Optoelectronic device having photodiodes for different wavelengths and process for making same | |
| CN107359221A (zh) | 一种基于soi‑量子点异质结的红外探测器制备方法 | |
| CN105609513A (zh) | 双面cmos图像传感器芯片及其制造方法 | |
| CN109166871A (zh) | 图像传感器及其制作方法 | |
| CN104934453A (zh) | 固体摄像装置 | |
| KR20210028808A (ko) | 이미지 센서 및 이를 포함하는 촬상 장치 | |
| WO2020251904A1 (fr) | Capteurs d'image cmos à réseau de microlentilles par pixel | |
| US20210111201A1 (en) | Image Sensor Structure and Method of Forming the Same | |
| JP2023003407A (ja) | 放射部及び受信部を含む光検出器モジュール | |
| CN103066084A (zh) | 一种cmos图像传感器及其制造方法 | |
| CN111129053A (zh) | 一种cmos图像传感器像素单元结构和形成方法 | |
| CN103620785A (zh) | 钝化直立纳米结构和其制造方法 | |
| CN107346774A (zh) | 一种单片集成的紫外焦平面器件及其制备方法 | |
| CN103441132A (zh) | 一种用低温裂片硅晶圆制备背照射cmos图像传感器的方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171114 |