CN107346742A - The preparation method of wafer bumps - Google Patents
The preparation method of wafer bumps Download PDFInfo
- Publication number
- CN107346742A CN107346742A CN201610292986.3A CN201610292986A CN107346742A CN 107346742 A CN107346742 A CN 107346742A CN 201610292986 A CN201610292986 A CN 201610292986A CN 107346742 A CN107346742 A CN 107346742A
- Authority
- CN
- China
- Prior art keywords
- scaling powder
- preparation
- metal layer
- opening
- pigment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
A kind of preparation method of wafer bumps provided by the invention, including：Semiconductor substrate is provided, semiconductor substrate surface includes the interlayer dielectric layer with multiple openings, has bottom metal layer in the opening；Scaling powder is coated in said opening, and there is the color pigment different from the color of the bottom metal layer in the scaling powder；The coating situation of the scaling powder in the multiple opening is detected；Tin ball is formed in said opening, a heat treatment process is carried out to the tin ball, and the tin ball forms the projection of spherical crown shape.In the present invention, using the color distortion between pigment and bottom metal layer, when being monitored to scaling powder, it can judge it is intact whether the scaling powder on bottom metal layer coats according to the color on aperture position.After scaling powder coating, the coating situation to scaling powder detects, so as to prevent the deviation due to coating cause tin ball the dislocation on bottom metal layer, missing or it is connected the problems such as, improve the yields of wafer bumps.
Description
Technical field
The present invention relates to semiconductor device processing technology field, more particularly to a kind of preparation method of wafer bumps.
Background technology
With the continuous development of integrated circuit technique, electronic product is increasingly to miniaturization, intelligent and height
Reliability direction is developed.And the encapsulation of integrated circuit not only directly affect integrated circuit, electronic module or even
The performance of complete machine, but also govern the minimizing of whole electronic system, low cost and reliability.Integrated
In the case that chip (chip) size of circuit is gradually reduced, integrated level improves constantly, electronics industry is to chip
Encapsulation technology propose higher and higher requirement.
In the prior art, in order to carry out the encapsulation of chip, there must be projection (bump) on wafer (wafer)
So as to the substrate connection with encapsulation.Each wafer can be cut into whole crystal grain (die), the number according to crystal grain
Mesh, multiple metal contact pads are formed on wafer, are separated between metal contact pad with passivation layer, make projection
When, Underbump metallization layer (UBM) structure is first formed on metal contact pad, it is then golden under projection
A tin silver metal layer is formed on category layer, tin silver metal layer forms projection by backflow solidify afterwards.Also, in shape
During into tin silver metal layer, scaling powder first is coated on Underbump metallization layer, tin silver metal layer is preferably welded
On Underbump metallization layer.Connect however, the projection formed on wafer can have dislocation, missing or two projections
The situation being connected together, so as to influence the encapsulation of chip.
The content of the invention
It is an object of the present invention to provide a kind of preparation method of wafer bumps, solves projection in the prior art
The problem of misplacing, lack or linking together, improve the yield of encapsulation chip.
In order to solve the above technical problems, the present invention provides a kind of preparation method of wafer bumps, including：
Semiconductor substrate is provided, the semiconductor substrate surface includes the interlayer dielectric layer with multiple openings,
There is bottom metal layer in the opening；
Scaling powder is coated in said opening, and there is color and the face of the bottom metal layer in the scaling powder
The different pigment of color；
The coating situation of the scaling powder in the multiple opening is detected；
Tin ball is formed in said opening, a heat treatment process is carried out to the tin ball, and the tin ball forms ball
Coronal is convex
Optionally, the pigment is the pigment not chemically reacted with the scaling powder.
Optionally, the scaling powder also includes alcohol type organic and aldehydes organic matter, and the scaling powder is in weak acid
Property.
Optionally, the pigment is alcohol type organic or ethers organic matter.
Optionally, the pigment is in faintly acid.
Optionally, the pigment is the reindeer moss in bluish violet.
Optionally, the pigment is accounted for below a ten thousandth of the mass fraction of the scaling powder.
Optionally, detected using coating situation of the optics module to the scaling powder.
Optionally, if the opening is in the color of the pigment, the scaling powder coating in the opening
It is intact.
Optionally, the bottom metal layer is copper metal layer, and the thickness of the bottom metal layer is 5 μm~40 μm.
Optionally, the material of the tin ball is sn-ag alloy, SAC or tin silver bismuth alloy.
Optionally, a diameter of 50 μm~500 μm of the tin ball.
Optionally, the temperature in heat treatment process is 200 DEG C -300 DEG C.
Optionally, the distance between adjacent described opening is 50 μm~500 μm.
Optionally, there is the gold between the Semiconductor substrate and the bottom metal layer in the opening
Belong to engagement pad.
In the preparation method of the wafer bumps of the present invention, coated on bottom metal layer in the opening for tin ball
The scaling powder of backflow, there is pigment in scaling powder, also, the color of pigment and the color of bottom metal layer are not
Together, using between pigment and bottom metal layer color distortion detection scaling powder whether coat it is intact, to helping
When solder flux is monitored, if the coating position of scaling powder is accurate, the color of pigment is presented in opening, then may be used
To judge that the coating of the scaling powder on bottom metal layer is intact.In the present invention, can scaling powder coating after,
Coating situation to scaling powder is detected, and the coating processes of scaling powder are adjusted in time, so as to anti-
Only due to the deviation of coating cause tin ball the dislocation on bottom metal layer, missing or it is connected the problems such as, improve
The yield of wafer bumps.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of wafer bumps in one embodiment of the invention；
Fig. 2 is the cross-sectional view of Semiconductor substrate in one embodiment of the invention；
Fig. 3 is the cross-sectional view that scaling powder is coated in one embodiment of the invention；
Fig. 4 is the cross-sectional view that tin ball is formed in one embodiment of the invention；
Fig. 5 is the cross-sectional view that backflow forms projection in one embodiment of the invention.
Embodiment
It has been already mentioned that the projection that is formed on wafer has dislocation, lacks or connect etc. and ask in background technology
Topic, to this inventor has found that causing because the problem of deviation occurs in the coating of scaling powder on wafer
Appearance dislocation, missing or adjacent projection link together during forming solder reflow, so as to influence wafer
Encapsulation.Also, after in the prior art, scaling powder coating is completed, it is difficult to the coating situation to scaling powder
Timely detected.
In order to solve the above-mentioned technical problem, inventor is by research, it is proposed that a kind of preparation of wafer bumps
Preparation method, in the preparation method of wafer bumps provided by the invention, applied on bottom metal layer in the opening
Scaling powder is covered, there is pigment in scaling powder, and the color of pigment is different from the color of bottom metal layer, utilizes
It is intact whether the color distortion detection scaling powder between pigment and bottom metal layer coats, and is carried out to scaling powder
During monitoring, if the coating position of scaling powder is accurate, the color of pigment is presented in opening, it can be determined that bottom
Scaling powder coating on metal level is intact., can be after scaling powder coating, to scaling powder in the present invention
Coating situation is detected, and the coating processes of scaling powder are adjusted in time, so as to prevent due to coating
Deviation cause tin ball the dislocation on bottom metal layer, missing or it is connected the problems such as, improve wafer bumps
Yield.
The preparation method of the wafer bumps of the present invention is specifically described below in conjunction with accompanying drawing, crystalline substance of the invention
For the flow chart of the preparation method of boss block with reference to shown in figure 1, Fig. 2~5 are that the preparation method of wafer bumps respectively walks
Suddenly the diagrammatic cross-section of the structure formed.
First, step S1 is performed, with reference to shown in figure 2, there is provided Semiconductor substrate 10, the Semiconductor substrate
10 be silicon substrate, germanium substrate, germanium silicon substrate or SOI substrate etc. well known to a person skilled in the art backing material,
Wherein, there is such as cmos circuit, amplifier, D/A converter, simulation in the Semiconductor substrate 10
The device architecture such as process circuit and/or digital processing circuit, interface circuit.The surface of Semiconductor substrate 10 tool
There is interlayer dielectric layer 11, the interlayer dielectric layer 11 is the dielectric layers well known in the art such as silica, silicon nitride
Material, the interlayer dielectric layer 11 are used to protect the device architecture in Semiconductor substrate 10.The interlayer is situated between
There are multiple openings 12 in matter layer 11.
In the present embodiment, interlayer Jie is deposited in the Semiconductor substrate 10 using chemical vapor deposition method
Matter layer 11, and the photoresistance of patterning is formed on interlayer dielectric layer 11, using the photoresistance of patterning as mask etching
Interlayer dielectric layer 11 forms opening 12.The opening 12 is arranged to need to draw in the Semiconductor substrate 10
Device architecture top position, also, in the present embodiment, the opening 12 is circle, certainly described
Opening 12 is not limited to as circle, can also be the shapes such as square, rectangle, to invention to this not limit
System.In addition, the distance between adjacent described opening 12 be 50 μm~500 μm, such as 200 μm, 300 μm,
400 μm etc., to need to set according to practical devices structure, the present invention is not limited this for this.
With continued reference to shown in Fig. 2, in the present embodiment, there is bottom metal layer 30 in the opening 12, it is described
There is metal contact pad 20, the metal contact pad between Semiconductor substrate 10 and the bottom metal layer 30
20 be aluminum metal layer.The bottom metal layer 30 is copper metal layer, and the metal contact pad 20 is used for will be partly
Device architecture in conductor substrate is drawn, and can form copper metal on metal contact pad 20 using electroplating technology
Layer 30, and the thickness of the bottom metal layer 30 is 5 μm~40 μm, for example, 20 μm, 35 μm, bottom
Layer metal level 30 is used to subsequently realize the connection between metal contact pad 20 and tin ball.
Step S2 is performed, with reference to shown in figure 3, scaling powder 40 is coated in the opening 12, it is described to help weldering
Agent 40 includes alcohol type organic and aldehydes organic matter, and the scaling powder is in faintly acid.In the present embodiment,
The mask plate with perforate can be used, scaling powder is coated in opening 12.For example, by metal
The perforate of formation rule on mask plate, the queueing discipline of perforate can be identical with opening 12, by covering for metal
Film version is attached on a semiconductor substrate, and perforate is corresponding with opening 12, then scaling powder is coated in perforate, from
And coat scaling powder in opening 12.It will be appreciated by persons skilled in the art that the scaling powder 40 is used
In in tin ball reflux course, the oxide layer of bottom metal layer 30 or tin ball surface is removed, so as to preferably
Realize the electric connection between tin ball and bottom metal layer 30.
In the present invention, also there is pigment, also, the color of pigment and bottom gold in the scaling powder 40
It is different to belong to the color of layer 30, and the pigment is not chemically reacted with the scaling powder 40, for example,
The pigment can be the alcohols not chemically reacted with the alcohol type organic in scaling powder and aldehydes organic matter
Organic matter, certainly, it will be appreciated by persons skilled in the art that the pigment in the present invention is not limited to as alcohol
Type organic, can also be other materials such as ethers organic matter, if pigment not with flux reaction, to this
Do not invent and not limit.In addition, acidity is presented in the alcohol type organic and aldehydes organic matter in the scaling powder,
That is the pigment is equally in faintly acid, so as to pigment not with the weakly acidic alcohol in the scaling powder 40
Type organic and the reaction of aldehydes organic matter, the characteristic of scaling powder 40 is not influenceed, ensures that scaling powder 40 can be gone
Except bottom metal layer 30 or the oxide of tin ball surface.
In the present embodiment, bottom metal layer 30 is in the faint yellow of metallic copper, and the pigment for example can be
In the reindeer moss (Litmus) of bluish violet, the character of reindeer moss is bluish violet powder, is extracted from lichen
The blue pigment arrived, it can partly be dissolved in water and aobvious purple, be a kind of weak organic acid, reindeer moss is not with helping weldering
Other substance reactions in agent, it can distinguish during coated on bottom metal layer.In the present invention, inciting somebody to action
When scaling powder and pigment are mixed, the scaling powder and pigment of certain mass are taken, both are mixed, and by two
Person stirs, moreover, the color for showing pigment of mixed scaling powder.It is understood that face
When the color of material and the color difference of bottom metal layer 30, it can utilize between pigment and bottom metal layer 30
Color distortion detection scaling powder whether coat it is intact, it may be determined that whether coated on bottom metal layer and help weldering
Agent, how the coating situation of scaling powder is.
It should be noted that the pigment is accounted for below a ten thousandth of the mass fraction of the scaling powder 40,
That is ratio of the pigment in the scaling powder 40 is very small, so as to by pigment for scaling powder 40
Issuable influence be minimized, and also need to guarantee in follow-up detection process, for examining
Whether scaling powder 40 coats intact in survey opening 12.
Then, step S3 is performed, the coating situation of the scaling powder 40 in the multiple opening 12 is entered
Row detection.In the present embodiment, the coating situation of the scaling powder 40 is detected using optics module.
When being monitored to scaling powder 40, if the coating position of scaling powder 40 is accurate, pigment is presented in opening 12
Color, for example, the lavender of reindeer moss is showed in the opening 12 of the present embodiment, so as to judge bottom
Scaling powder 40 on metal level 30 coats intact.And it is possible to using this method by each opening 12
The coating situation of scaling powder 40 is detected one by one, it is determined that the scaling powder 40 of coating opening 12 of problems,
And the scaling powder 40 in opening 12 of problems is adjusted, so as to which the present invention can be realized to helping weldering
The coating situation of agent 40 is timely detected, and pinpoints the problems in time and technique is adjusted, and the present invention is right
The detection method of scaling powder is simple, existing technological process is not impacted.
Step S4 is performed, with reference to shown in figure 4, forms tin ball 50 in the opening 12, in the present embodiment,
The mask plate with perforate can be used, tin ball 50 is implanted in opening 12, for example, by metal
The perforate of formation rule on mask plate, the mask plate of metal is attached on a semiconductor substrate, and perforate is with opening
12 correspondences of mouth, then tin ball is implanted in perforate, so as to form tin ball 50 in opening 12.Certainly, originally
It is not limited to form tin ball by the way of implantation in invention, the method for spot welding can also be used in opening 12
Tin ball 50 is formed, this present invention is not limited.The material of the tin ball 50 is sn-ag alloy, SAC conjunction
Gold or tin silver bismuth alloy, a diameter of 50 μm~500 μm of the tin ball 50, for example, 150 μm, 300 μm,
400 μm, 450 μm etc., after step S3, the scaling powder in opening 12 can meet to require substantially, because
And tin ball 50 the problems such as being not easy to misplace, tin ball 50 are used for the projection cube structure for forming wafer, realize core
The encapsulation of piece.
Afterwards, with reference to shown in figure 5, a heat treatment process, the shape of the tin ball 50 are carried out to the tin ball 50
Balling-up is coronal, so as to form wafer bumps 51, the connection that projection 51 is used between chip and package substrate.This
In embodiment, the temperature in heat treatment process is 200 DEG C -300 DEG C, for example, 250 DEG C, in heat treatment process
In, scaling powder 40 is by the oxide removal on bottom metal layer 30 and the surface of tin ball 50, after Overheating Treatment,
Preferably it is electrically connected between tin ball 50 and bottom metal layer 30.Also, will also not in subsequent technique
The remaining scaling powder 40 of reaction removes, it is for instance possible to use conventional organic solvent (such as propyl alcohol) will
Scaling powder 40 is removed, and Semiconductor substrate is cleaned.Relative to prior art, pass through the crystalline substance of the present invention
The preparation method of boss block, the yield of wafer bumps bring up to 99%, so as to greatly improve chip package
Yield.
In summary, in the preparation method of wafer bumps of the invention, applied on bottom metal layer in the opening
The scaling powder for the backflow of tin ball is covered, there is pigment, also, the color and underlying metal of pigment in scaling powder
Whether the color of layer is different, coated using the color distortion detection scaling powder between pigment and bottom metal layer
It is good, when being monitored to scaling powder, if the coating position of scaling powder is accurate, pigment is presented in opening
Color, then it may determine that the scaling powder coating on bottom metal layer is intact., can be in scaling powder in the present invention
After coating, the coating situation to scaling powder is detected, and the coating processes of scaling powder are adjusted in time
It is whole, so as to prevent dislocation, missing that the deviation due to coating causes tin ball on bottom metal layer or be connected etc.
Problem, improve the yield of wafer bumps.
Obviously, those skilled in the art can carry out various changes and modification without departing from this hair to the present invention
Bright spirit and scope.So, if the present invention these modifications and variations belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprising including these changes and modification.
Claims (15)
- A kind of 1. preparation method of wafer bumps, it is characterised in that including：Semiconductor substrate is provided, the semiconductor substrate surface includes the interlayer dielectric layer with multiple openings, There is bottom metal layer in the opening；Scaling powder is coated in said opening, and there is color and the face of the bottom metal layer in the scaling powder The different pigment of color；The coating situation of the scaling powder in the multiple opening is detected；Tin ball is formed in said opening, a heat treatment process is carried out to the tin ball, and the tin ball forms ball Coronal projection.
- 2. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that the pigment is not The pigment to be chemically reacted with the scaling powder.
- 3. the preparation method of wafer bumps as claimed in claim 2, it is characterised in that the scaling powder is also Including alcohol type organic and aldehydes organic matter, the scaling powder is in faintly acid.
- 4. the preparation method of wafer bumps as claimed in claim 3, it is characterised in that the pigment is alcohol Type organic or ethers organic matter.
- 5. the preparation method of the wafer bumps as described in Claims 2 or 3 or 4, it is characterised in that described Pigment is in faintly acid.
- 6. the preparation method of wafer bumps as claimed in claim 5, it is characterised in that the pigment be in The reindeer moss of bluish violet.
- 7. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that the pigment accounts for institute Below a ten thousandth for stating the mass fraction of scaling powder.
- 8. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that using optics module Coating situation to the scaling powder detects.
- 9. the preparation method of wafer bumps as claimed in claim 8, it is characterised in that if the opening is in The color of the pigment, then the scaling powder coating in the opening is intact.
- 10. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that the underlying metal Layer is copper metal layer, and the thickness of the bottom metal layer is 5 μm~40 μm.
- 11. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that the material of the tin ball Expect for sn-ag alloy, SAC or tin silver bismuth alloy.
- 12. the preparation method of wafer bumps as claimed in claim 11, it is characterised in that the tin ball it is straight Footpath is 50 μm~500 μm.
- 13. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that in heat treatment process Temperature be 200 DEG C -300 DEG C.
- 14. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that opened described in adjacent The distance between mouth is 50 μm~500 μm.
- 15. the preparation method of wafer bumps as claimed in claim 1, it is characterised in that have in the opening There is the metal contact pad between the Semiconductor substrate and the bottom metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292986.3A CN107346742A (en) | 2016-05-05 | 2016-05-05 | The preparation method of wafer bumps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610292986.3A CN107346742A (en) | 2016-05-05 | 2016-05-05 | The preparation method of wafer bumps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107346742A true CN107346742A (en) | 2017-11-14 |
Family
ID=60254113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610292986.3A Pending CN107346742A (en) | 2016-05-05 | 2016-05-05 | The preparation method of wafer bumps |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107346742A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198794A (en) * | 2017-12-29 | 2018-06-22 | 通富微电子股份有限公司 | A kind of chip packing-body and preparation method thereof |
| CN108231717A (en) * | 2017-12-29 | 2018-06-29 | 通富微电子股份有限公司 | A kind of potted element and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0448248A (en) * | 1990-06-18 | 1992-02-18 | Hitachi Ltd | Cream solder printing and inspecting device |
| JP2007305724A (en) * | 2006-05-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Device and method for deciding transfer state of paste |
| US20130171816A1 (en) * | 2011-12-29 | 2013-07-04 | Stmicroelectronics Pte Ltd. | Apparatus and method for placing solder balls |
| CN103537822A (en) * | 2013-10-25 | 2014-01-29 | 广州汉源新材料有限公司 | High-concentration scaling powder for pre-forming soldering lug spraying |
| CN104816105A (en) * | 2014-02-04 | 2015-08-05 | 千住金属工业株式会社 | Core ball, solder paste, formed-solder, flux-coated core ball and solder joint |
-
2016
- 2016-05-05 CN CN201610292986.3A patent/CN107346742A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0448248A (en) * | 1990-06-18 | 1992-02-18 | Hitachi Ltd | Cream solder printing and inspecting device |
| JP2007305724A (en) * | 2006-05-10 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Device and method for deciding transfer state of paste |
| US20130171816A1 (en) * | 2011-12-29 | 2013-07-04 | Stmicroelectronics Pte Ltd. | Apparatus and method for placing solder balls |
| CN103537822A (en) * | 2013-10-25 | 2014-01-29 | 广州汉源新材料有限公司 | High-concentration scaling powder for pre-forming soldering lug spraying |
| CN104816105A (en) * | 2014-02-04 | 2015-08-05 | 千住金属工业株式会社 | Core ball, solder paste, formed-solder, flux-coated core ball and solder joint |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198794A (en) * | 2017-12-29 | 2018-06-22 | 通富微电子股份有限公司 | A kind of chip packing-body and preparation method thereof |
| CN108231717A (en) * | 2017-12-29 | 2018-06-29 | 通富微电子股份有限公司 | A kind of potted element and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8368214B2 (en) | Alpha shielding techniques and configurations | |
| TWI433266B (en) | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods | |
| US6989326B2 (en) | Bump manufacturing method | |
| TWI252546B (en) | Bumping process and structure thereof | |
| CN105990291A (en) | Structure for die probing | |
| CN104425437A (en) | Three-dimensional chip stack and method of forming the same | |
| TW201119005A (en) | Chip package and fabrication method thereof | |
| CN101882625A (en) | Light sensor using wafer-level packaging | |
| US8399348B2 (en) | Semiconductor device for improving electrical and mechanical connectivity of conductive pillers and method therefor | |
| TW200939413A (en) | 3-D semiconductor die structure with containing feature and method | |
| US20050140027A1 (en) | Method and device for manufacturing bonding pads for chip scale packaging | |
| US11121051B2 (en) | Semiconductor packages and method of manufacturing the same | |
| US9406662B2 (en) | Flip-chip assembly process comprising pre-coating interconnect elements | |
| CN105140140B (en) | A kind of production method of wafer scale scolding tin micro convex point | |
| CN105938827A (en) | Semiconductor device and method for manufacturing the same | |
| CN107346742A (en) | The preparation method of wafer bumps | |
| CN102867757B (en) | For removing the UBM engraving method of undercutting | |
| US20160322319A1 (en) | Method of Forming a Solder Bump on a Substrate | |
| CN104037091B (en) | Electrical connector and forming method thereof | |
| CN106298719A (en) | Metal bump structure and forming method thereof | |
| US8426303B2 (en) | Manufacturing method of semiconductor device, and mounting structure thereof | |
| CN203733778U (en) | Embedded welding pad structure | |
| US20030157789A1 (en) | Bump manufacturing method | |
| TWI596720B (en) | Methods and structures for packaging semiconductor dies | |
| CN111755342B (en) | Method for packaging wafer-level chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171114 |
|
| RJ01 | Rejection of invention patent application after publication |