CN107340658A - 一种tft‑lcd的集成结构的集成方法 - Google Patents
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Abstract
本发明公开了一种TFT‑LCD的集成结构的集成方法,包括以下步骤:(1)制备TFT‑LCD基板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗TFT‑LCD基板,再烘干,在TFT‑LCD基板上依次制备阳极层、功能层和阴极层;(2)制备驱动电路背板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗绝缘基板,再烘干,在绝缘基板上依次制备薄膜晶体管和电容构成驱动电路,然后采用封装层对该驱动电路和信号输出端连接点进行封装,随后贯通该封装层制成连接信号输出端连接点的通道,并在封装层之上和该通道中制备扩展电极连接和引出信号输出端连接点;(3)集成TFT‑LCD结构,将制成的TFT‑LCD面板翻转,使阴极层面向驱动电路背板的扩展电极,两者对准并叠层粘合,完成TFT‑LCD的集成。
Description
技术领域
本发明涉及TFT-LCD技术领域,具体涉及一种TFT-LCD的集成结构的集成方法。
背景技术
TFT-LCD由于其主动发光、广视角、高对比度、色域丰富、响应速度快、构造简单、低功耗及可实现柔性显示等特性,将成为下一代显示器件的主力军。鉴于TFT-LCD的电流驱动特性,其每个像素都有一个对应由薄膜晶体管(TFT)和电容组成的电路来驱动和控制TFT-LCD发光元件,其中驱动薄膜晶体管与TFT-LCD直接连接,将电压信号转换成电流,并结合电容和其余薄膜晶体管构成驱动电路,实现像素的选通、驱动和补偿等功能。由TFT-LCD和驱动电路组成的像素以阵列形式排列,每个像素都由开关信号和光强信号共同控制,决定像素的开关状态和发光强度,进而形成一幅完整的图像。
现有的不透明的驱动电路会限制发光区域的大小,从而影响像素的开口率;若采用顶发光结构的TFT-LCD,虽然可以使像素的开口率不受驱动电路限制,实现约100%的开口率,但是却面临着顶电极、反型层和封装等诸多结构和工艺难点。
发明内容
本发明旨在提供了一种TFT-LCD的集成结构的集成方法。
本发明提供如下技术方案:
一种TFT-LCD的集成结构的集成方法,包括以下步骤:
(1)制备TFT-LCD基板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗TFT-LCD基板,再烘干,在TFT-LCD基板上依次制备阳极层、功能层和阴极层;
(2)制备驱动电路背板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗绝缘基板,再烘干,在绝缘基板上依次制备薄膜晶体管和电容构成驱动电路,然后采用封装层对该驱动电路和信号输出端连接点进行封装,随后贯通该封装层制成连接信号输出端连接点的通道,并在封装层之上和该通道中制备扩展电极连接和引出信号输出端连接点;
(3)集成TFT-LCD结构,将制成的TFT-LCD面板翻转,使阴极层面向驱动电路背板的扩展电极,两者对准并叠层粘合,完成TFT-LCD的集成。
所述步骤(1)中超声清洗是在80-140KHz中选择多个不同频率进行超声清洗5-8min,清洗温度为50-60℃。
所述步骤(2)中驱动电路由若干薄膜晶体管和若干电容构成,该薄膜晶体管包括依次层叠在所述绝缘基板上的栅电极、栅极绝缘层、半导体层和源/漏电极,该电容包括依次层叠在同一绝缘基板上的第一电极、绝缘层和第二电极。
所述步骤(3)中粘合是将TFT-LCD面板的阴极层面向对准驱动电路背板的扩展电极并相互叠层粘合。
与现有技术相比,本发明的有益效果是:本发明TFT-LCD面板与驱动电路背板的制备过程相互独立,避免传统工艺中后期TFT-LCD不良率导致的驱动电路背板的损失;两个制备过程可以同时进行,从而提高了生产效率,降低了工艺成本,缩短了生产周期,具有很好的产业兼容性。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一种TFT-LCD的集成结构的集成方法,包括以下步骤:
(1)制备TFT-LCD基板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗TFT-LCD基板,再烘干,在TFT-LCD基板上依次制备阳极层、功能层和阴极层;
(2)制备驱动电路背板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗绝缘基板,再烘干,在绝缘基板上依次制备薄膜晶体管和电容构成驱动电路,然后采用封装层对该驱动电路和信号输出端连接点进行封装,随后贯通该封装层制成连接信号输出端连接点的通道,并在封装层之上和该通道中制备扩展电极连接和引出信号输出端连接点;
(3)集成TFT-LCD结构,将制成的TFT-LCD面板翻转,使阴极层面向驱动电路背板的扩展电极,两者对准并叠层粘合,完成TFT-LCD的集成。
所述步骤(1)中超声清洗是在80-140KHz中选择多个不同频率进行超声清洗5-8min,清洗温度为50-60℃。
所述步骤(2)中驱动电路由若干薄膜晶体管和若干电容构成,该薄膜晶体管包括依次层叠在所述绝缘基板上的栅电极、栅极绝缘层、半导体层和源/漏电极,该电容包括依次层叠在同一绝缘基板上的第一电极、绝缘层和第二电极。
所述步骤(3)中粘合是将TFT-LCD面板的阴极层面向对准驱动电路背板的扩展电极并相互叠层粘合。
对于本领域技术人员而言,显然本发明不限于所述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是所述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。
Claims (4)
1.一种TFT-LCD的集成结构的集成方法,其特征在于,包括以下步骤:
(1)制备TFT-LCD基板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗TFT-LCD基板,再烘干,在TFT-LCD基板上依次制备阳极层、功能层和阴极层;
(2)制备驱动电路背板,利用洗涤剂溶液、丙酮、去离子水和乙醇超声清洗绝缘基板,再烘干,在绝缘基板上依次制备薄膜晶体管和电容构成驱动电路,然后采用封装层对该驱动电路和信号输出端连接点进行封装,随后贯通该封装层制成连接信号输出端连接点的通道,并在封装层之上和该通道中制备扩展电极连接和引出信号输出端连接点;
(3)集成TFT-LCD结构,将制成的TFT-LCD面板翻转,使阴极层面向驱动电路背板的扩展电极,两者对准并叠层粘合,完成TFT-LCD的集成。
2.根据权利要求1所述的一种TFT-LCD的集成结构的集成方法,其特征在于:所述步骤(1)中超声清洗是在80-140KHz中选择多个不同频率进行超声清洗5-8min,清洗温度为50-60℃。
3.根据权利要求1所述的一种TFT-LCD的集成结构的集成方法,其特征在于:所述步骤(2)中驱动电路由若干薄膜晶体管和若干电容构成,该薄膜晶体管包括依次层叠在所述绝缘基板上的栅电极、栅极绝缘层、半导体层和源/漏电极,该电容包括依次层叠在同一绝缘基板上的第一电极、绝缘层和第二电极。
4.根据权利要求1所述的一种TFT-LCD的集成结构的集成方法,其特征在于:所述步骤(3)中粘合是将TFT-LCD面板的阴极层面向对准驱动电路背板的扩展电极并相互叠层粘合。
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