CN107332620A - Luminous power stable optical module and optical communication equipment - Google Patents
Luminous power stable optical module and optical communication equipment Download PDFInfo
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- CN107332620A CN107332620A CN201710342665.4A CN201710342665A CN107332620A CN 107332620 A CN107332620 A CN 107332620A CN 201710342665 A CN201710342665 A CN 201710342665A CN 107332620 A CN107332620 A CN 107332620A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/502—LED transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07955—Monitoring or measuring power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to the optical module and optical communication equipment that a kind of luminous power is stable, the optical module includes：Infrared LED (10), for generating infrared light in the presence of driving current；Light sensing circuit (11), electrically connects the infrared LED (10), the luminous power for measuring the infrared LED (10), and generate the photoelectric current matched with the luminous power；Feedback regulating circuit (12), electrically connect the infrared LED (10) and the light sensing circuit (11), for receiving after the photoelectric current through the processing generation driving current, driving current inverse change with the change of the photoelectric current.The optical module and optical communication equipment that the present invention is provided can realize that the luminous efficiency of infrared light is stable.
Description
Technical field
The invention belongs to technical field of optical fiber communication, the stable optical module of more particularly to a kind of luminous power and optic communication are set
It is standby.
Background technology
Optical module (transceivermodule), is widely used in all kinds of optical communication equipments, by opto-electronic device, work(
The energy composition such as circuit and optical interface, opto-electronic device includes launching and receiving two parts.Emitting portion is typically：Input certain code
The electric signal of rate driving semiconductor laser (LD after internal driving chip processing：) or light emitting diode LaserDiode
(LED) modulated optical signal of respective rate is launched.Receiving portion is typically：By light after the optical signal input module of one constant bit rate
Detection diode is converted to electric signal.The electric signal of phase code rate is exported after preamplifier.Briefly, the work of optical module
With being exactly opto-electronic conversion, transmitting terminal converts electrical signals into optical signal, after being transmitted by optical fiber, and receiving terminal again changes optical signal
Into electric signal.
Due to the feature of semiconductor laser, when temperature is higher, its luminous power can change, especially in high temperature
Under, it will causing the luminous efficiency of optical module can strongly reduce, and influence the optical transmission performance of optical module.
The content of the invention
In order to solve the above-mentioned technical problem, set the invention provides a kind of stable optical module of luminous power and optic communication
It is standby.
The embodiment provides the optical module that a kind of luminous power is stable, including：
Infrared LED (10), for generating infrared light in the presence of driving current；
Light sensing circuit (11), electrically connects the infrared LED (10), the luminous work(for measuring the infrared LED (10)
Rate, and generate the photoelectric current matched with the luminous power；
Feedback regulating circuit (12), electrically connects the infrared LED (10) and the light sensing circuit (11), for receiving
State after photoelectric current and to generate the driving current to adjust the luminous of the infrared LED (10) through processing.
In one embodiment that the present invention is provided, optical module also includes：
Temperature sensor (20), the first temperature of the processor (30) for monitoring the optical module；
Processor (30), electrically connects the temperature sensor (20), for determining second temperature according to first temperature,
So that the feedback regulating circuit (12) generates the driving current according to the second temperature.
In one embodiment that the present invention is provided, optical module also includes memory (40), and the memory (40) is electrically connected
The processor (30) is connect, for storing the first matching list, first matching list indicates first temperature and described second
The matching relationship of temperature.
In one embodiment for providing of the present invention, the memory (40) is additionally operable to store the second matching list, and described the
Two matching lists indicate the second temperature and the matching relationship of the drive circuit.
In one embodiment that the present invention is provided, the infrared LED (10) includes LED chip (1001), substrate
(1002), lens (1003), spun gold (1004) and resin material (1005)；Wherein,
The LED chip (1001) is located at the intermediate groove portion of the substrate (1002)；
The two ends of the spun gold (1004) connect metal wire and the LED chip on the substrate (1002) respectively
(1001)；
The lens (1003) are located on the substrate (1002) and are fixedly connected with the substrate (1002)；
The resin material (1005) is located among the cavity that the substrate (1002) is formed with the lens (1003).
In one embodiment that the present invention is provided, the emission wavelength of the infrared LED (10) is 1550nm~1650nm.
In one embodiment that the present invention is provided, the LED component of the LED chip (1001) includes：Substrate (101), P
Ge layers of type crystallization (102), intrinsic Ge layers (103), N-type Ge layers (104) and passivation layer (105)；
Wherein, Ge layers of the p-type crystallization (102), intrinsic Ge layers (103), N-type Ge layers (104) and described blunt
Change layer (105) to stack gradually on the substrate (101).
In one embodiment that the present invention is provided, the LED component also includes positive electrode (106) and negative electrode (107),
The positive electrode (106) and the negative electrode (107) connect p-type crystallization Ge layers (102) and described N-type Ge layers respectively
(104)。
In one embodiment that the present invention is provided, the positive electrode (106) and the negative electrode (107) are Cr-Au
Alloy material.
The embodiment of the present invention also provides a kind of optical communication equipment, including the optical module that such as above-mentioned any embodiment is referred to.
Optical module and optical communication equipment that the present invention is provided, are lighted, and adopt simultaneously by infrared LED alternative semiconductors laser
With light sensory feedback mode, it is ensured that the power stability of optical module work, optical module is become by ambient temperature when reducing optic communication
The influence of change.
Brief description of the drawings
Below in conjunction with accompanying drawing, the embodiment to the present invention is described in detail.
Fig. 1 is a kind of structural representation of the optical module of luminous power stabilization provided in an embodiment of the present invention；
Fig. 2 is a kind of feedback regulating circuit structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the structural representation of the stable optical module of another luminous power provided in an embodiment of the present invention；
Fig. 4 is a kind of infrared LED structural representation provided in an embodiment of the present invention；
Fig. 5 is a kind of structural representation of LED component provided in an embodiment of the present invention；
Fig. 6 a- Fig. 6 m are a kind of preparation method schematic diagram of LED component of the embodiment of the present invention；
Fig. 7 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of structural representation of the optical module of luminous power stabilization provided in an embodiment of the present invention
Figure, the optical module includes：
Infrared LED (10), for generating infrared light in the presence of driving current；
Light sensing circuit (11), electrically connects the infrared LED (10), the luminous work(for measuring the infrared LED (10)
Rate, and generate the photoelectric current matched with the luminous power；
Feedback regulating circuit (12), electrically connects the infrared LED (10) and the light sensing circuit (11), for receiving
State after photoelectric current and to generate the driving current to adjust the luminous of the infrared LED (10) through processing.Wherein, the driving current
The inverse change with the change of the photoelectric current.
In the present embodiment, light sensing circuit (11) can include optical sensor, for measuring the infrared LED (10)
The luminous power of the infrared LED (10) measured is converted to photoelectric current by luminous power, the optical sensor, the photoelectric current i.e. by with
In the luminance for monitoring the infrared LED (10).Optical sensor senses that the luminous power of the infrared LED (10) becomes hour, its
The photoelectric current of generation reduces therewith；Conversely, photoelectric current can increase.
In the present embodiment, feedback regulating circuit (12) can (now this be red in the case where the photoelectric current of its reception diminishes
Outer LED driving current is often less than normal) the bigger driving current of output, (now should in the case that its photoelectricity rheology received is big
The driving current of infrared LED is often bigger than normal) the smaller driving current of output, so that the luminous power of optical module is stable.
Fig. 2 is refer to, Fig. 2 is a kind of feedback regulating circuit structural representation provided in an embodiment of the present invention.Certainly, this reality
The feedback regulating circuit (12) for applying example offer can be the automatic power control circuit of various maturations in the prior art, i.e. APC electricity
Road, the present invention is not limited herein.
Further, on the basis of above-described embodiment, Fig. 3 is refer to, Fig. 3 is provided in an embodiment of the present invention another
The structural representation of the stable optical module of luminous power.Alternatively, optical module provided in an embodiment of the present invention, in addition to：
Temperature sensor (20), the first temperature of the processor (30) for monitoring the optical module；
Processor (30), electrically connects the temperature sensor (20), for determining second temperature according to first temperature,
So that the feedback regulating circuit (12) generates the driving current according to the second temperature.
Further, on the basis of above-described embodiment, in addition to memory (40), memory (40) the electrical connection institute
Processor (30) is stated, for storing the first matching list, first matching list indicates first temperature and the second temperature
Matching relationship.
Further, in another embodiment that the present invention is provided, the memory (40) is additionally operable to storage second and matched
Table, second matching list indicates the second temperature and the matching relationship of the drive circuit.
When being operated in high temperature or more violent temperature change available for optical module in the present embodiment, adjusted in feedback regulating circuit
Section, can also be directly according to the temperature of optical module is direct, quickly control driving current is big not in time or in the case of failure
It is small.First temperature of the present embodiment is the internal temperature of optical module, and second temperature is the ambient temperature of optical module.Processing
Device, for example, can be microprocessing unit MCU, can know that the ambient temperature of optical module (should according to the internal temperature of optical module
Internal temperature can first pass through experiment in advance with ambient temperature and obtain).
According to the driving current optimum matching relation of ambient temperature and infrared LED (10), (wherein, the matching relationship can
It is pre- to first pass through experiment acquisition), generating the driving current matched with the ambient temperature is used to be stably driven with infrared LED
(10).In the present embodiment, the generating means of driving current are connected with processor, are receiving the instruction of generation driving current
Afterwards, can more rapidly, accurate execute instruction.The type of drive of this infrared LED (10) have more rapidly, more accurately advantage.
Optical module and optical communication equipment that the present invention is provided, are lighted, and adopt simultaneously by infrared LED alternative semiconductors laser
With light sensory feedback mode, it is ensured that the power stability of optical module work, optical module is become by ambient temperature when reducing optic communication
The influence of change.
Further, on the basis of above-described embodiment, Fig. 4 is refer to, Fig. 4 is that one kind provided in an embodiment of the present invention is red
Outer LED structure schematic diagram, the infrared LED is used in infrared optical module.The infrared LED includes LED chip (1001), substrate
(1002), lens (1003), spun gold (1004) and resin material (1005)；Wherein,
The LED chip (1001) is located at the intermediate groove portion of the substrate (1002)；
The two ends of the spun gold (1004) connect metal wire and the LED chip on the substrate (1002) respectively
(1001)；
The lens (1003) are located on the substrate (1002) and are fixedly connected with the substrate (1002)；
The resin material (1005) is located among the cavity that the substrate (1002) is formed with the lens (1003).
Further, on the basis of foregoing invention, the emission wavelength of the infrared LED (10) for 1550nm~
1650nm。
Embodiment two
Fig. 5 is refer to, Fig. 5 is a kind of structural representation of LED component provided in an embodiment of the present invention, the LED component bag
Include：
Substrate (101), Ge layers of p-type crystallization (102), intrinsic Ge layers (103), N-type Ge layers (104) and passivation layer (105)；
Wherein, Ge layers of the p-type crystallization (102), intrinsic Ge layers (103), N-type Ge layers (104) and described blunt
Change layer (105) to stack gradually on the substrate (101).
Further, on the basis of above-described embodiment, in addition to positive electrode (106) and negative electrode (107), the positive electricity
Pole (106) and the negative electrode (107) connect p-type crystallization Ge layers (102) and described N-type Ge layers (104) respectively.
Further, on the basis of above-described embodiment, the positive electrode (106) and the negative electrode (107) are Cr-
Au alloy materials.
Further, on the basis of above-described embodiment, the substrate (101) is single crystalline Si material.
Further, on the basis of above-described embodiment, the thickness of p-type crystallization Ge layers (102) is 190~200nm,
Doping concentration is 5 × 1018cm-3。
Further, on the basis of above-described embodiment, p-type crystallization Ge layers (102) is brilliant again by using laser
Obtained from chemical industry skill is handled the Ge epitaxial layers being grown on the substrate (101), wherein, laser crystallization work again
The parameter of skill is：Optical maser wavelength is 808nm, laser spot size 10mm × 1mm, and laser power is 1.5kW/cm2, laser movement
Speed is 25mm/s.
Further, on the basis of above-described embodiment, described intrinsic Ge layers (103) include the first Ge barrier layers
(1031), GeSn layers (1032) and the 2nd Ge barrier layers (1033), also, the first Ge barrier layers (1031), the GeSn
Layer (1032) and the 2nd Ge barrier layers (1033) stack gradually to be formed.
Further, on the basis of above-described embodiment, the thickness of the first Ge barrier layers (1031) is 12-18nm,
The thickness of described GeSn layers (1032) is 150~200nm, and the thickness of the 2nd Ge barrier layers (1033) is 400-450nm.
Further, on the basis of above-described embodiment, the thickness of N-type Ge layers (104) is 100-120nm.
Using the LED provided in an embodiment of the present invention based on GeSn materials, the integrated electricity of photoelectricity is used as instead of Ge using GeSn
Light source in road, improves luminous efficiency, effectively suppresses the extension of defect to obtain the empty substrates of high-quality Ge/Si；Also,
Ge barrier layer structures are introduced between Ge doped layers and GeSn intrinsic layers, can avoid Ge layers of doped source to GeSn be not intended to mix
It is miscellaneous, so as to improve the performance of device.
Embodiment three
A kind of preparation method schematic diagram for LED component that Fig. 6 a- Fig. 6 m, Fig. 6 a- Fig. 6 m are the embodiment of the present invention is refer to,
The preparation method comprises the following steps：
S101, selection single crystal Si substrate 001, as shown in Figure 6 a.
S102, at a temperature of 250 DEG C~350 DEG C, grow 40~50nm's on single crystal Si substrate 001 using CVD techniques
Ge inculating crystal layers 002, as shown in Figure 6 b.
S103, at a temperature of 550 DEG C~600 DEG C, using CVD techniques in the 150~250nm of superficial growth of Ge inculating crystal layers 002
Ge body layers 003, as fig. 6 c.
S104, the SiO that 100~150nm is grown using CVD techniques on the surface of Ge body layers 0032Protective layer 004, such as schemes
Shown in 6d.
S105, the whole backing material including single crystal Si substrate 001, Ge inculating crystal layers 002, Ge body layers 003 is heated to
700 DEG C, continuous using laser, crystallization process handles whole backing material again, obtains crystallization Ge layers 005, the whole substrate of natural cooling
Material, wherein optical maser wavelength are 808nm, laser spot size 10mm × 1mm, and laser power is 1.5kW/cm2, laser movement speed
Spend for 25mm/s.
S106, utilize dry etch process etching SiO2Protective layer, obtains crystallization Ge layers 005, as shown in fig 6e.
S107, using ion implantation technology crystallization Ge layers 005 are doped, doping concentration is 5 × 1018cm-3, form P
Type crystallization Ge layers 006, then make annealing treatment, as shown in Figure 6 f to whole material.
S108, at 300-350 DEG C of temperature, the first of 12-18nm is grown on p-type crystallization Ge layers 006 using CVD techniques
Ge barrier layers 007, as shown in figure 6g.
S109, in H2Less than 350 DEG C, SnCl are reduced the temperature in atmosphere4And GeH4Respectively as Sn and Ge sources, Sn components
For 8%, it is 92% to mix Ge components, 150~200nm GeSn layers 008 is grown on the first Ge barrier layers 007, as shown in figure 6h.
S110, at 300-350 DEG C of temperature, 400-450nm the 2nd Ge is grown on GeSn layers 008 using CVD techniques
Barrier layer 009, as shown in Fig. 6 i.
S111, growth N-type Ge layers 010.Less than 350 DEG C are reduced the temperature to, the continued growth Ge on the 2nd Ge barrier layers 009
Layer, uses N2Growth rate can be improved as delivery gas, with PH3As P doped sources, P doping concentrations are 1 × 1019cm-3, shape
Into 100-120nm N-type Ge Rotating fields 010, as shown in Fig. 6 j.
S112, at room temperature, is etched away including the first Ge barrier layers, GeSn layers and the 2nd Ge barrier layers using etching technics
Designated area, expose Ge layers of p-type crystallization to make Ge layers of metals contact table top of p-type crystallization, as shown in Fig. 6 k.
S113, using plasma enhanced chemical vapor deposition technique, in Ge layers of metals contact table top of p-type crystallization and described
SiO is grown in Ge layers of N-type2Passivation layer 011, isolation table top makes electrical contact with extraneous, then using etching technics, selective etch
SiO2Passivation layer 011, forms Ge layers of contact hole of Ge layers of contact hole of p-type and N-type, as shown in Fig. 6 l respectively.
S114, using electron beam evaporation depositing technics, in Ge layers of contact hole region growing 150 of Ge layers of contact hole of p-type and N-type
~200nm Cr-Au alloys 012 are as electrode, as shown in Fig. 6 m.
Fig. 7 is refer to, Fig. 7 is a kind of schematic diagram of LRC techniques provided in an embodiment of the present invention.Wherein, LRC techniques are to swash
Light crystallization process again, LRC techniques are a kind of methods of thermal induced phase transition crystallization, by laser heat treatment, make Ge extensions on Si substrates
Layer fusing recrystallization, laterally the dislocation defects of release Ge epitaxial layers, can not only obtain high-quality Ge epitaxial layers, simultaneously as
LRC techniques accurately control crystalline areas, and Si, the Ge on the one hand avoided in common process between Si substrates and Ge epitaxial layers is mutual
Material interface characteristic is good between expansion problem, another aspect Si/Ge.
Example IV
The embodiment of the present invention also provides a kind of optical communication equipment, and the optical communication equipment includes what any of the above embodiment was mentioned
Optical module is used as its luminescent device.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a kind of stable optical module of luminous power, it is characterised in that including：
Infrared LED (10), for generating infrared light in the presence of driving current；
Light sensing circuit (11), the electrical connection infrared LED (10), the luminous power for measuring the infrared LED (10), and
The photoelectric current that generation matches with the luminous power；
Feedback regulating circuit (12), electrically connects the infrared LED (10) and the light sensing circuit (11), for receiving the light
Generate the driving current to adjust the luminous of the infrared LED (10) through processing after electric current.
2. optical module as claimed in claim 1, it is characterised in that also include：
Temperature sensor (20), the first temperature of the processor (30) for monitoring the optical module；
Processor (30), electrically connects the temperature sensor (20), for determining second temperature according to first temperature, so that
The feedback regulating circuit (12) generates the driving current according to the second temperature.
3. optical module as claimed in claim 2, it is characterised in that also including memory (40), the memory (40) is electrically connected
The processor (30) is connect, for storing the first matching list, first matching list indicates first temperature and described second
The matching relationship of temperature.
4. optical module as claimed in claim 3, it is characterised in that the memory (40) is additionally operable to store the second matching list,
Second matching list indicates the second temperature and the matching relationship of the drive circuit.
5. optical module as claimed in claim 3, it is characterised in that the infrared LED (10) includes LED chip (1001), base
Plate (1002), lens (1003), spun gold (1004) and resin material (1005)；Wherein,
The LED chip (1001) is located at the intermediate groove portion of the substrate (1002)；
The two ends of the spun gold (1004) connect metal wire and the LED chip (1001) on the substrate (1002) respectively；
The lens (1003) are located on the substrate (1002) and are fixedly connected with the substrate (1002)；
The resin material (1005) is located among the cavity that the substrate (1002) is formed with the lens (1003).
6. optical module as claimed in claim 5, it is characterised in that the emission wavelength of the infrared LED (10) be 1550nm~
1650nm。
7. optical module as claimed in claim 5, it is characterised in that the LED component of the LED chip (1001) includes：Substrate
(101), p-type crystallization Ge layers (102), intrinsic Ge layers (103), N-type Ge layers (104) and passivation layer (105)；
Wherein, Ge layers of the p-type crystallization (102), intrinsic Ge layers (103), N-type Ge layers (104) and the passivation layer
(105) stack gradually on the substrate (101).
8. optical module as claimed in claim 7, it is characterised in that the LED component also includes positive electrode (106) and negative electrode
(107), the positive electrode (106) and the negative electrode (107) connect p-type crystallization Ge layers (102) and the N-type Ge respectively
Layer (104).
9. optical module as claimed in claim 8, it is characterised in that the positive electrode (106) and the negative electrode (107) are
Cr-Au alloy materials.
10. a kind of optical communication equipment, it is characterised in that including the optical module as described in claim any one of 1-9.
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| CN201710342665.4A CN107332620A (en) | 2017-05-17 | 2017-05-17 | Luminous power stable optical module and optical communication equipment |
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| CN201710342665.4A CN107332620A (en) | 2017-05-17 | 2017-05-17 | Luminous power stable optical module and optical communication equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108073891A (en) * | 2017-11-10 | 2018-05-25 | 广东日月潭电源科技有限公司 | A kind of 3 D intelligent face identification system |
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| CN203150603U (en) * | 2013-01-08 | 2013-08-21 | 创巨光科技股份有限公司 | Infrared light-emitting diode module |
| CN105572821A (en) * | 2016-03-21 | 2016-05-11 | 四川新易盛通信技术有限公司 | Low-rate double-emission SFP optical module |
| CN205430253U (en) * | 2016-03-21 | 2016-08-03 | 成都新易盛通信技术股份有限公司 | Low rate DC~20Mbps receives and dispatches integrative SFP optical module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102970080A (en) * | 2012-10-31 | 2013-03-13 | 青岛海信宽带多媒体技术有限公司 | Optical module and adjusting method of working temperature of laser thereof |
| CN203150603U (en) * | 2013-01-08 | 2013-08-21 | 创巨光科技股份有限公司 | Infrared light-emitting diode module |
| CN105572821A (en) * | 2016-03-21 | 2016-05-11 | 四川新易盛通信技术有限公司 | Low-rate double-emission SFP optical module |
| CN205430253U (en) * | 2016-03-21 | 2016-08-03 | 成都新易盛通信技术股份有限公司 | Low rate DC~20Mbps receives and dispatches integrative SFP optical module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108073891A (en) * | 2017-11-10 | 2018-05-25 | 广东日月潭电源科技有限公司 | A kind of 3 D intelligent face identification system |
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Application publication date: 20171107 |