CN107331760A - 长寿命led芯片 - Google Patents

长寿命led芯片 Download PDF

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Publication number
CN107331760A
CN107331760A CN201710544796.0A CN201710544796A CN107331760A CN 107331760 A CN107331760 A CN 107331760A CN 201710544796 A CN201710544796 A CN 201710544796A CN 107331760 A CN107331760 A CN 107331760A
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Prior art keywords
packing colloid
led chip
led
long
life
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庞绮琪
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements

Abstract

长寿命LED芯片,其特征是所述LED芯片,包括底面设有电极的LED管芯及覆盖于LED芯片顶面和侧面的封装胶体层,所述封装胶体的底部和侧面具有散热反射面,2所述封装胶体层为介电材料制作的透明胶体。所述芯片包括封装胶体层、包覆于封装胶体内部的LED管芯管芯,所述LED管芯与电路板电连接。封装胶体层采用为透明环氧树脂或聚碳酸酯制作,所述封装胶体层包覆多个LED管芯管芯形成封装体,多个封装体通过封装胶体粘结形成作为LED芯片的单一封装组件。

Description

长寿命LED芯片
技术领域
本发明涉及LED封装结构。
背景技术
LED管芯芯片为采用封装技术将发光二极管封装得到的一种能够将电能直接转化为光能的照明元件,虽然现有的LED芯片的寿命较高,但为了满足某些特殊使用场合,如需要长时间使用且难于更换的使用场合,需要具有更长寿命的低功耗照明元件,因此提供一种长寿命LED芯片成为现有技术中亟待解决的问题。
发明内容
为解决前述技术问题,本发明采用了以下技术方案:提供了长寿命LED芯片,其特征是所述LED芯片,包括底面设有电极的LED管芯及覆盖于LED芯片顶面和侧面的封装胶体层,所述封装胶体的底部和侧面具有散热反射面。
所述封装胶体层为介电材料制作的透明胶体。
所述的长寿命LED芯片,其特征是所述芯片包括封装胶体层、包覆于封装胶体内部的LED管芯管芯,所述LED管芯与电路板电连接。
所述封装胶体层采用为透明环氧树脂或聚碳酸酯制作。所述封装胶体层包覆多个LED管芯管芯形成封装体,多个封装体通过封装胶体粘结形成作为LED芯片的单一封装组件。
所述每个LED管芯管芯包括一个P电极和一个N管芯电极。所述P电极及N相对于LED管芯的出光面设置且均裸露于封装胶体层之外。P电极和N电极均电连接至电路板。
本发明提供的长寿命LED芯片,与现有技术相比,通过改进LED封装结构,提高了LED的使用寿命,解决了现有技术中存在的问题。
具体实施方式
本发明提供的长寿命LED芯片,所述长寿命LED芯片,其特征是所述LED芯片,包括底面设有电极的LED管芯及覆盖于LED芯片顶面和侧面的封装胶体层,所述封装胶体的底部和侧面具有散热反射面。所述封装胶体层为介电材料制作的透明胶体。
所述的长寿命LED芯片,其特征是所述芯片包括封装胶体层、包覆于封装胶体内部的LED管芯管芯,所述LED管芯与电路板电连接。
所述封装胶体层采用为透明环氧树脂或聚碳酸酯制作。所述封装胶体层包覆多个LED管芯管芯形成封装体,多个封装体通过封装胶体粘结形成作为LED芯片的单一封装组件。
所述每个LED管芯管芯包括一个P电极和一个N管芯电极。所述P电极及N相对于LED管芯的出光面设置且均裸露于封装胶体层之外。P电极和N电极均电连接至电路板。
本发明还提供了一种制造长寿命LED芯片的方法。所述方法包括以下步骤:
1)使用材料去除方法在布置在陶瓷衬底上的导电层中形成多个分隔腔,每个所述分隔腔延伸通过所述导电层从而将所述导电层分隔成多个发光区域。
2)所述导电层的暴露表面上安装至少一个LED管芯,在所述LED管芯的第一、第二电极和发光区域中成电连接。
3)在所述导电层中形成分隔腔之后,使用作为封装胶的介电材料填充
所述材料去除过程可以是激光烧蚀、喷水加工和微铣削中的任意一种。
所述长寿命LED芯片,其特征是介电材料的相对介电常数范围优选80~150。
所述长寿命LED芯片,其特征是所述的封装胶体中掺杂由纳米银粒子。
所述纳米银粒子的制备方法为:
1)在表面活性剂如十二烷基硫酸纳和十二烷基磺酸钠等存在下;
2)采用532nm,10ns的激光在丙酮、水、甲醇、异丙醇等溶剂中辐照银金属基体材料与溶液界面处,用激光剥离银箔,得到纳米银粒子。
耐压测试测试
将实施例1~4制得的LED各取100只分别采用模拟高电压的寿命测试,将电压设定为额定电压的150%,以额定电压下的寿命为100,出现浪涌电流时电压增加为额定电压的120%
实施例号 1 2 3 4
寿命/h 89641 98924 93254 104181
实验结果表明,采用本发明的长寿命LED芯片封装的LED,其使用寿命都长达8~10万小时。

Claims (4)

1.长寿命LED芯片,其特征是所述LED芯片,包括底面设有电极的LED管芯及覆盖于LED芯片顶面和侧面的封装胶体层,所述封装胶体的底部和侧面具有散热反射面,2所述封装胶体层为介电材料制作的透明胶体。
2.如权利要求1所述长寿命LED芯片,其特征是所述芯片包括封装胶体层、包覆于封装胶体内部的LED管芯管芯,所述LED管芯与电路板电连接。
3.如权利要求1所述长寿命LED芯片,其特征是所述封装胶体层采用为透明环氧树脂或聚碳酸酯制作,所述封装胶体层包覆多个LED管芯管芯形成封装体,多个封装体通过封装胶体粘结形成作为LED芯片的单一封装组件。
4.如权利要求1所述所述长寿命LED芯片,其特征是所述每个LED管芯管芯包括一个P电极和一个N管芯电极,所述P电极及N相对于LED管芯的出光面设置且均裸露于封装胶体层之外,P电极和N电极均电连接至电路板。
CN201710544796.0A 2017-07-06 2017-07-06 长寿命led芯片 Pending CN107331760A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130093313A1 (en) * 2011-10-13 2013-04-18 Citizen Holdings Co., Ltd. Light-emitting device
CN204204913U (zh) * 2014-10-09 2015-03-11 广东德豪润达电气股份有限公司 Led封装结构
CN105006508A (zh) * 2015-07-02 2015-10-28 厦门市三安光电科技有限公司 发光二极管封装结构
CN106206919A (zh) * 2015-05-28 2016-12-07 思特亮株式会社 半导体发光元件结构物及其制造方法
CN206022425U (zh) * 2016-06-08 2017-03-15 林书弘 高光效发光二极管倒装芯片封装结构
CN106784250A (zh) * 2017-01-05 2017-05-31 芜湖聚飞光电科技有限公司 一种发光角度可控的芯片级led封装器件及封装工艺

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130093313A1 (en) * 2011-10-13 2013-04-18 Citizen Holdings Co., Ltd. Light-emitting device
CN204204913U (zh) * 2014-10-09 2015-03-11 广东德豪润达电气股份有限公司 Led封装结构
CN106206919A (zh) * 2015-05-28 2016-12-07 思特亮株式会社 半导体发光元件结构物及其制造方法
CN105006508A (zh) * 2015-07-02 2015-10-28 厦门市三安光电科技有限公司 发光二极管封装结构
CN206022425U (zh) * 2016-06-08 2017-03-15 林书弘 高光效发光二极管倒装芯片封装结构
CN106784250A (zh) * 2017-01-05 2017-05-31 芜湖聚飞光电科技有限公司 一种发光角度可控的芯片级led封装器件及封装工艺

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