CN107331718A - Double-waveband detector and preparation method based on indium selenide and gallium nitride - Google Patents
Double-waveband detector and preparation method based on indium selenide and gallium nitride Download PDFInfo
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- CN107331718A CN107331718A CN201710523317.7A CN201710523317A CN107331718A CN 107331718 A CN107331718 A CN 107331718A CN 201710523317 A CN201710523317 A CN 201710523317A CN 107331718 A CN107331718 A CN 107331718A
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- insulating barrier
- absorbing layer
- layer
- infrared absorption
- indium selenide
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- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 47
- 238000010521 absorption reaction Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 23
- 229910021389 graphene Inorganic materials 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000000197 pyrolysis Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000006260 foam Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- -1 substrate (1) Chemical compound 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/0264—Inorganic materials
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention discloses a kind of double-waveband detector based on indium selenide and gallium nitride and preparation method, the problem of prior art can not be realized simultaneously with position sensing is mainly solved.It includes:Substrate (1), UV absorbing layer (21), insulating barrier (3), infrared absorption layer (22), two Ohmic electrodes (4,5).UV absorbing layer is located on substrate；Insulating barrier is located at the Left half-plane of UV absorbing layer, in RHP one step surface of formation of UV absorbing layer；Infrared absorption layer left-half is located on insulating barrier, and right half part is located on the step surface of UV absorbing layer, and its left-half area is less than insulating barrier area, and right half part area is less than step surface area；First Ohmic electrode is located on infrared absorption layer, and its area is more than infrared absorption layer area, less than insulating barrier area；Second Ohmic electrode is located on UV absorbing layer step surface.The present invention can carry out the detection of ultraviolet and infrared double-waveband simultaneously, improve the performance and detection efficient of detection system.
Description
Technical field
The invention belongs to technical field of semiconductor device, a kind of ultraviolet-infrared dual band detector is particularly related to, be can be used for
Fire, meteorological detection.
Background technology
Ultraviolet infrared double-waveband Detection Techniques have very important application value in terms of such as fire, meteorology.
Detected using a ultraviolet infrared double-waveband, the identification probability of detection target can be greatly improved.
At present, a ultraviolet IRDS is due to the limitation of detector or optical system, and used ultraviolet one is infrared
Two waveband detection system is mostly using ultraviolet, infrared two independent probe unit detections, and such as gallium nitride-base ultraviolet detector passes through
Change the detection that aluminium component in aluminum gallium nitride realizes different ultraviolet bands；Cadmium-telluride-mercury infrared detector, by changing matching somebody with somebody for mercury and cadmium
Than obtaining optimum performance to realize each infrared spectrum section.When carrying out ultraviolet-infrared dual band detection, each detector is visited
Different wave bands are surveyed, system receives the target information of different-waveband, by processing, shows.It is this single using two
Probe unit carries out the system architecture complex of two waveband detection, and volume is big, and power consumption is big, it is impossible to realizes simultaneously and is visited with position
Survey, and when needing optical channel with punctual, also require the fine adjustment of optical system, otherwise easily cause to same picture point,
The location dislocation of different-waveband, adds detection difficulty, reduces detection efficient.
If can realize, ultraviolet, the infrared ultraviolet infrared double-waveband of same detector progress that shares is detected, and can not only be made
With an optical system, system application performance is improved, and detection efficient can be greatly improved.Therefore research is single with same detection
Member carries out ultraviolet infrared double-waveband detection and is very important simultaneously.
The content of the invention
It is an object of the invention to for above-mentioned the deficiencies in the prior art, there is provided a kind of pair based on indium selenide and gallium nitride
Band detector and preparation method, to realize that ultraviolet and infrared two waveband is carried out with same probe unit to be detected, and reduces power consumption,
Improvement system application performance, improves detection efficient.
The technical proposal of the invention is realized in this way：
One, technical principles：
In recent years, application of the indium selenide in terms of infrared detector is got growing concern for.Selenizing indium compound material
Material is the semi-conducting material that a class has special crystal structure, and its unique structure makes it possess excellent photoelectric properties.Indium selenide
It is a kind of direct band-gap semicondictor, its absorption spectrum ranges covers infrared band, and with particularly preferred response characteristic, makes it
It can be used as infrared absorption layer in the research of double-waveband detector.On the other hand, for ultraviolet detector, gallium nitride is with its spectrum
Scope is wide, has covered ultraviolet band, heat-resisting quantity and good corrosion resistance, has huge application valency in terms of ultraviolet detector
Value.
In addition, application of the graphene transparent electrode in gallium nitride base photoelectric device is a new problem, 2010 with
Preceding nearly no any document report.On the one hand it is due to that graphene is a kind of new material in itself；And a prior reason
It is that graphene preparation just made substantial progress in 2009.Experiment shows that graphene has the light transmittance of superelevation, the expansion to electric current
Scattered effect is clearly.Under the illumination of 372nm wavelength, the light transmittances of 2 layer graphenes is up to 95%, 4 layers also up to 89%, this
A little advantages all make graphene transparent electrode have very high application potential in the research of photodetector.
Two, are as follows according to above-mentioned principle technical scheme：
1. a kind of double-waveband detector based on indium selenide and gallium nitride, including substrate, absorbed layer, insulating barrier and two electricity
Pole, it is characterised in that：
Absorbed layer, including UV absorbing layer and infrared absorption layer；
UV absorbing layer is located at the upper surface of substrate, and insulating barrier is located on the Left half-plane of UV absorbing layer upper surface, with
Make RHP one step surface of formation of UV absorbing layer；
Infrared absorption layer is located on the step surface of insulating barrier and UV absorbing layer；
First Ohmic electrode is located on the Left half-plane of infrared absorption layer, and the Left half-plane of infrared absorption layer is covered completely
Lid, and be in close contact beyond the part of infrared absorption layer with insulating barrier；
Second Ohmic electrode is located at the part not covered on UV absorbing layer step surface by infrared absorption layer.
2. a kind of double-waveband detector preparation method based on indium selenide and gallium nitride, comprises the following steps：
1) UV absorbing layer is grown using epitaxial growth equipment on substrate；
2) layer insulating is deposited on UV absorbing layer；
3) right half part of the insulating barrier on UV absorbing layer is etched, with the right half part shape on the UV absorbing layer
Into step surface；
4) obtain patch using micromechanics stripping means to lie prostrate in the indium selenide film arrowband in pyrolysis release band, the indium selenide is thin
The width of film arrowband is less than the width of insulating barrier, and its length is more than the length of insulating barrier and less than the length of UV absorbing layer；
5) using orientation transfer method by paste lie prostrate in pyrolysis release band indium selenide left-half covering on the insulating layer,
Right half part is covered on the table top of UV absorbing layer, indium selenide is in close contact respectively with insulating barrier and UV absorbing layer, then
100 DEG C -120 DEG C are heated to it and pyrolysis release band is slowly torn off, infrared absorption layer is obtained；
6) grapheme material is prepared using chemical gas-phase deposition method, the area of the graphene is more than infrared on insulating barrier
The area of absorbed layer left-half, is transferred on the insulating barrier with indium selenide less than the area of insulating barrier, and by the graphene,
Carrying out annealing again is in close contact graphene and insulating barrier and infrared absorption layer indium selenide, obtains the first Ohmic electrode；
7) the second Ohmic electrode is made on the step surface on UV absorbing layer, pair based on indium selenide and gallium nitride is completed
The making of band detector.
The invention has the advantages that：
1. selenizing phosphide material is transferred on gallium nitride by the present invention, the ultraviolet absorption characteristic and indium selenide of gallium nitride are utilized
Infrared absorption characteristic, forms the double absorption layer structure of indium selenide and gallium nitride, can realize while carrying out ultraviolet and infrared double-waveband
Detection, reduce power consumption, improve detection efficient.
2. the first Ohmic electrode uses grapheme material in the present invention, using the high transmission rate of graphene, electric current is improved
Diffusion effect.
Brief description of the drawings
To further illustrate the technology contents of the present invention, with reference to embodiments and after accompanying drawing detailed description such as：
Fig. 1 is the ultraviolet infrared double-waveband detector structural representation of indium selenide of the present invention and gallium nitride material；
Fig. 2 is the process of the device for the ultraviolet infrared double-waveband detector that the present invention prepares indium selenide and gallium nitride material
Schematic diagram.
Embodiment
Reference picture 1, the double-waveband detector of the invention based on indium selenide and gallium nitride, including：Substrate 1, absorbed layer 2, absolutely
Edge layer 3 and two electrodes, i.e. the first Ohmic electrode 4 and the second Ohmic electrode 5.Wherein：
Substrate 1, using any one in silicon, sapphire, GaAs or carbofrax material；
Absorbed layer 2, including UV absorbing layer 21 and the double-layer structure of infrared absorption layer 22, the UV absorbing layer 21 are located at substrate
1 upper surface, it uses gallium nitride material；Utilize metal organic chemical vapor deposition MOCVD, molecular beam epitaxy MBE
Or the equipment growth of other growing gallium nitride materials makes；
Insulating barrier 3, on the Left half-plane of the upper surface of UV absorbing layer 21, so that the RHP of UV absorbing layer 21
A step surface is formed, the insulating barrier 3 uses alundum (Al2O3) material, its thickness is 20-40nm, utilizes physical vapor deposition methods
Prepare and formed；
Infrared absorption layer 22, on the step surface of insulating barrier 3 and UV absorbing layer 21, and its left-half is located at insulation
On layer 3, right half part is located on the step surface of UV absorbing layer 21, and the area of its left-half is less than the area of insulating barrier 3, right
The area of half part is less than the area of step surface；The infrared absorption layer 22 uses intrinsic selenizing phosphide material, is peeled off using micromechanics
Method prepares to be formed；
First Ohmic electrode 4, on the Left half-plane of infrared absorption layer 22, and by the Left half-plane of infrared absorption layer 22
It is completely covered, and is in close contact beyond the part of infrared absorption layer 22 with insulating barrier 3；First Ohmic electrode 4 uses graphene
Material, prepares to be formed using chemical gas-phase deposition method；
Second Ohmic electrode 5, the part not covered on the step surface of UV absorbing layer 21 by infrared absorption layer 22；This
Two Ohmic electrodes 5 use metal dots structure or loop configuration；Ledge structure is carved with methods such as dry etchings, exposes UV absorption
Layer 21；Then prepare to be formed with methods such as photoetching, plated films.
Reference picture 2, the present invention makes the double-waveband detector method based on indium selenide and gallium nitride, provides following three kinds of realities
Apply example：
Embodiment 1：The making of the double-waveband detector based on indium selenide and gallium nitride is completed using Sapphire Substrate
Step 1, UV absorbing layer 21 is grown.
1a) prepare in the acetone suspension of gallium oxide, the Sapphire Substrate that cleaning is uniformly dropped in glue head dropper, it is natural
Dry；
1b) sapphire substrate sheet is put into quartz boat, quartz boat is put into constant-temperature tubular stove；
After 1c) tube furnace is evacuated, being passed through argon gas makes air pressure in stove be an atmospheric pressure, is heated to 1000 DEG C
And keep；
The ammonia 1h that flow is 60sccm 1d) is passed through at 1000 DEG C, tube furnace is closed and cools to room temperature, depended on
In the yellow film shape gallium nitride sample of Sapphire Substrate, the UV absorbing layer 21 being located in Sapphire Substrate, such as Fig. 2 a are formed.
Step 2, depositing insulating layer 3.
The deposit thickness on the gallium nitride film of Sapphire Substrate that depends on obtained in step 1 aoxidizes two for the three of 20nm
Aluminium thin layer, forms insulating barrier 3, such as Fig. 2 b.
Step 3, etching insulating layer 3.
The right half part of insulating barrier 3 to being obtained in step 2 is performed etching, the shape on the right half part of UV absorbing layer 21
Into step surface, such as Fig. 2 c.
Step 4, infrared absorption layer selenizing phosphide material is obtained.
Patch is obtained using micromechanics stripping means to lie prostrate in the indium selenide film arrowband in pyrolysis release band, the indium selenide film
The width of arrowband is less than the width of insulating barrier 3, and its length is more than the length of insulating barrier 3 and less than the length of UV absorbing layer 21；
Step 5, transfer makes infrared absorption layer 22.
Using orientation transfer method by paste lie prostrate in pyrolysis release band indium selenide left-half covering on the insulating layer 3,
Right half part is covered on the table top of UV absorbing layer 21, indium selenide is closely connect with insulating barrier 3 and UV absorbing layer 21 respectively
Touch, then 120 DEG C are heated to it and pyrolysis release band is slowly torn off, obtain infrared absorption layer 22, such as Fig. 2 d.
Step 6, the first Ohmic electrode 4 is prepared.
6a) clean foam copper is put into quartz boat, quartz boat is put into constant-temperature tubular stove；
After 6b) tube furnace is evacuated, 10sccm hydrogen is passed through, 1030 DEG C is heated to and keeps；
The methane 2h that flow is 50sccm 6c) is passed through at 1030 DEG C, tube furnace is closed and cools to room temperature, depended on
In the graphene of foam copper substrate；
It is transferred to after 6d) graphene for depending on foam copper substrate is corroded with ammonium persulfate solution with infrared absorption layer
On the insulating barrier 3 of indium selenide, then carrying out annealing is in close contact graphene and insulating barrier 3 and infrared absorption layer indium selenide, obtains
First Ohmic electrode 4, such as Fig. 2 e.
Step 7, the second Ohmic electrode 5 is prepared.
The second ohm of electricity to form metal dots structure is prepared with photoetching and film plating process on the step surface of UV absorbing layer
Pole 5, completes the making of the double-waveband detector based on indium selenide and gallium nitride, such as Fig. 2 f.
Embodiment 2：The making of the double-waveband detector based on indium selenide and gallium nitride is completed using silicon substrate.
Step one, UV absorbing layer 21 is grown.
1.1) the acetone suspension of gallium oxide is prepared, is uniformly dropped in glue head dropper on the silicon chip that crystal orientation is 111, it is natural
Dry；
1.2) according to the step 1b of embodiment 1) -1d) and identical operation complete be located at silicon substrate on UV absorbing layer 21
Make, such as Fig. 2 a.
Step 2, depositing insulating layer 3.
Deposition obtains three oxidations that thickness is 40nm on the gallium nitride film for depending on silicon substrate 1 obtained in step 1
Two aluminium thin layers, obtain insulating barrier 3, such as Fig. 2 b.
Step 3, etching insulating layer 3.
Implementing for this step is identical with the step 3 of embodiment 1.
Step 4, obtains infrared absorption layer selenizing phosphide material.
Implementing for this step is identical with the step 4 of embodiment 1.
Step 5, transfer makes infrared absorption layer 22.
Using orientation transfer method by paste lie prostrate in pyrolysis release band indium selenide left-half covering on the insulating layer 3,
Right half part is covered on the table top of UV absorbing layer 21, indium selenide is closely connect with insulating barrier 3 and UV absorbing layer 21 respectively
Touch, then 100 DEG C of slow removing pyrolysis release bands again are heated to it, obtain infrared absorption layer 22, such as Fig. 2 d.
Step 6, prepares the first Ohmic electrode 4.
Implementing for this step is identical with the step 6 of embodiment 1.
Step 7, prepares the second Ohmic electrode 5.
Prepare to form the second Ohmic electrode 5 with photoetching and film plating process on step surface on UV absorbing layer 21, this
Two Ohmic electrodes 5 use metal dots structure, complete the making of the double-waveband detector based on indium selenide and gallium nitride, such as Fig. 2 f.
Embodiment 3：The making of the double-waveband detector based on indium selenide and gallium nitride is completed using silicon carbide substrates.
Step A, grows UV absorbing layer 21.
A1) prepare on the acetone suspension of gallium oxide, the silicon carbide substrates piece that cleaning is uniformly dropped in glue head dropper, from
So dry；
A2) according to the step 1b of embodiment 1) -1d) and identical operation complete be located at silicon carbide substrates on UV absorbing layer
21 making, such as Fig. 2 a.
Step B, depositing insulating layer 3.
Deposition obtains three oxygen that thickness is 30nm on the gallium nitride film for depending on silicon carbide substrates obtained in step 1
Change two aluminium thin layers, obtain insulating barrier 3；
Step C, etching insulating layer 3.
Implementing for this step is identical with the step 3 of embodiment 1.
Step D, obtains infrared absorption layer selenizing phosphide material.
Implementing for this step is identical with the step 4 of embodiment 1.
Step E, transfer makes infrared absorption layer 22.
Using orientation transfer method by paste lie prostrate in pyrolysis release band indium selenide left-half covering on the insulating layer 3,
Right half part is covered on the table top of UV absorbing layer 21, indium selenide is closely connect with insulating barrier 3 and UV absorbing layer 21 respectively
Touch, then 110 DEG C are heated to it and pyrolysis release band is slowly torn off, obtain infrared absorption layer 22, such as Fig. 2 d；
Step F, prepares the first Ohmic electrode 4.
Implementing for this step is identical with the step 6 of embodiment 1.
Step G, prepares the second Ohmic electrode 5.
Prepare to form the second Ohmic electrode 5 with photoetching and film plating process on 21 step surface on UV absorbing layer, this
Two Ohmic electrodes 5 use metal ring structure, complete the making of the double-waveband detector based on indium selenide and gallium nitride, such as scheme
2f。
Above description is only three instantiations of the present invention, does not constitute any limitation of the invention, it is clear that for this
For the professional in field, after present invention and design principle has been understood, all may without departing substantially from the present invention principle,
In the case of structure, carry out in form and the various modifications and variations in details, but these amendments based on inventive concept
With change still within the scope of the claims of the present invention.
Claims (9)
1. a kind of double-waveband detector based on indium selenide and gallium nitride, including substrate (1), absorbed layer (2), insulating barrier (3) and
Two electrodes (4,5), it is characterised in that：
Absorbed layer (2), including UV absorbing layer (21) and infrared absorption layer (22)；
UV absorbing layer (21) is located at the upper surface of substrate (1), and insulating barrier (3) is located at left the half of UV absorbing layer (21) upper surface
In plane, so that RHP one step surface of formation of UV absorbing layer (21)；
Infrared absorption layer (22) is located on the step surface of insulating barrier (3) and UV absorbing layer (21)；
First Ohmic electrode (4) is located on the Left half-plane of infrared absorption layer (22), and flat by left the half of infrared absorption layer (22)
Face is completely covered, and is in close contact beyond the part of infrared absorption layer (22) with insulating barrier (3)；
Second Ohmic electrode (5) is located at the part not covered on UV absorbing layer (21) step surface by infrared absorption layer (22).
2. detector according to claim 1, wherein substrate (1), using silicon, sapphire, GaAs and carbofrax material
In any one.
3. detector according to claim 1, wherein insulating barrier (3), using alundum (Al2O3) material, and thickness is 20-
40nm。
4. detector according to claim 1, wherein UV absorbing layer (21), using gallium nitride material.
5. detector according to claim 1, wherein infrared absorption layer (22) use intrinsic selenizing phosphide material, and infrared suction
The area for receiving layer (22) is less than the area of insulating barrier (3) and UV absorbing layer step surface.
6. detector according to claim 1, wherein the first Ohmic electrode (4) uses grapheme material, and first ohm
The area of electrode (4) is less than the area of insulating barrier.
7. detector according to claim 1, wherein the second Ohmic electrode (5), using metal dots structure or loop configuration.
8. a kind of double-waveband detector preparation method based on indium selenide and gallium nitride, comprises the following steps：
1) UV absorbing layer is grown using epitaxial growth equipment on substrate；
2) layer insulating is deposited on UV absorbing layer；
3) right half part of the insulating barrier on UV absorbing layer is etched, with the right half part formation platform on the UV absorbing layer
Terrace；
4) obtain patch using micromechanics stripping means to lie prostrate in the indium selenide film arrowband in pyrolysis release band, the indium selenide film is narrow
The width of band is less than the width of insulating barrier, and its length is more than the length of insulating barrier and less than the length of UV absorbing layer；
5) using orientation transfer method by paste lie prostrate in the indium selenide of pyrolysis release band left-half covering on the insulating layer, right half
It is partially covered on the table top of UV absorbing layer, indium selenide is in close contact respectively with insulating barrier and UV absorbing layer, then to it
It is heated to 100 DEG C -120 DEG C and slowly tears pyrolysis release band off, obtains infrared absorption layer；
6) grapheme material is prepared using chemical gas-phase deposition method, the area of the graphene is more than the infrared absorption on insulating barrier
The area of layer left-half, is transferred on the insulating barrier with indium selenide, then enter less than the area of insulating barrier, and by the graphene
Row annealing is in close contact graphene and insulating barrier and infrared absorption layer indium selenide, obtains the first Ohmic electrode；
7) the second Ohmic electrode is made on the step surface on UV absorbing layer, the two waveband based on indium selenide and gallium nitride is completed
The making of detector.
9. method according to claim 8, wherein step 6) in grapheme material is prepared using chemical gas-phase deposition method,
Process conditions it is as follows：
Substrate uses foam copper,
Methane and hydrogen flowing quantity ratio are 50sccm：10sccm,
Growth temperature is 1030 DEG C,
Growth time is 2.0h.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN110808297A (en) * | 2019-10-25 | 2020-02-18 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
| CN114497261A (en) * | 2022-01-06 | 2022-05-13 | 大连民族大学 | Solar blind/infrared dual-band automatic energy photoelectric detector and preparation method thereof |
| CN115207143A (en) * | 2022-06-02 | 2022-10-18 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251723A1 (en) * | 2007-03-12 | 2008-10-16 | Ward Jonathan W | Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same |
| CN104701393A (en) * | 2015-03-13 | 2015-06-10 | 上海集成电路研发中心有限公司 | Dual-waveband photoelectric detector and preparation method thereof |
| CN104956496A (en) * | 2013-01-11 | 2015-09-30 | 庆熙大学校产学协力团 | Photodetector |
| CN106898674A (en) * | 2017-03-25 | 2017-06-27 | 张清 | A kind of double-waveband detector |
-
2017
- 2017-06-30 CN CN201710523317.7A patent/CN107331718B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251723A1 (en) * | 2007-03-12 | 2008-10-16 | Ward Jonathan W | Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same |
| CN104956496A (en) * | 2013-01-11 | 2015-09-30 | 庆熙大学校产学协力团 | Photodetector |
| CN104701393A (en) * | 2015-03-13 | 2015-06-10 | 上海集成电路研发中心有限公司 | Dual-waveband photoelectric detector and preparation method thereof |
| CN106898674A (en) * | 2017-03-25 | 2017-06-27 | 张清 | A kind of double-waveband detector |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN110808297A (en) * | 2019-10-25 | 2020-02-18 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
| CN110808297B (en) * | 2019-10-25 | 2021-04-06 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
| CN114497261A (en) * | 2022-01-06 | 2022-05-13 | 大连民族大学 | Solar blind/infrared dual-band automatic energy photoelectric detector and preparation method thereof |
| CN114497261B (en) * | 2022-01-06 | 2024-08-16 | 大连民族大学 | Solar blind/infrared dual-band automatic energy photoelectric detection device and preparation method thereof |
| CN115207143A (en) * | 2022-06-02 | 2022-10-18 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
| CN115207143B (en) * | 2022-06-02 | 2023-10-31 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
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