CN107329319A - Quantum dot diaphragm and preparation method thereof, backlight module - Google Patents
Quantum dot diaphragm and preparation method thereof, backlight module Download PDFInfo
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- CN107329319A CN107329319A CN201710604041.5A CN201710604041A CN107329319A CN 107329319 A CN107329319 A CN 107329319A CN 201710604041 A CN201710604041 A CN 201710604041A CN 107329319 A CN107329319 A CN 107329319A
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- quantum dot
- layer
- barrier layer
- quantum
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Abstract
A kind of quantum dot diaphragm, including the first barrier layer set gradually, the first quantum dot layer, basalis, the second quantum dot layer, the second barrier layer, first quantum dot layer includes the green light quantum point being dispersed in polymeric material, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, first barrier layer is deposited on first quantum dot layer, and second barrier layer is deposited on second quantum dot layer.The quantum dot diaphragm excellent performance of the present invention, suitable industrialization.
Description
Technical field
The present invention relates to display field, more particularly to a kind of quantum dot diaphragm for backlight display field.
Background technology
Quantum dot is that LCD backlight shows that product improves a kind of effective ways of colour gamut.Compared to common white light LEDs, make
With quantum dot diaphragm collocation blue-ray LED, LCD colour gamut can be improved to more than 100%NTSC by original 70%NTSC, so that
Show more preferable color saturation.
Existing quantum dot diaphragm is made up of two Obstruct membrane intermediate course quantum dot layers, and in sandwich structure, it makes work
Skill mainly includes：Two Obstruct membranes are applied as by film with the macromolecule glue for being mixed with red-green glow quantum dot by coating process, and
It is cured to form.The Obstruct membrane deposits inorganic coating on organic group bottom and constituted.
The content of the invention
It is an object of the invention to provide a kind of new quantum dot diaphragm, the quantum dot diaphragm cost of prior art is solved
High, self-absorption is big and is difficult the problem of doing thin.
The invention provides a kind of quantum dot diaphragm, including set gradually the first barrier layer, the first quantum dot layer, substrate
Layer, the second quantum dot layer, the second barrier layer, first quantum dot layer include the green glow amount being dispersed in polymeric material
Sub-, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, the first barrier layer deposition
On first quantum dot layer, second barrier layer is deposited on second quantum dot layer.
Preferably, the base layer thickness scope is 25 microns -100 microns, first quantum dot layer and described second
Quantum dot layer thickness range is 20 microns -50 microns.
Preferably, the thickness range of first barrier layer and second barrier layer is 200 nanometers -2 microns.
Preferably, the basalis is the polyester film formed by polyethylene terephthalate.
Preferably, first barrier layer and second barrier layer include inorganic coating and protective coating.
Preferably, first barrier layer and second barrier layer include alternate organic layer and inorganic coating, and
Protective coating.
Preferably, the inorganic coating is alumina layer or silicon oxide layer.
Preferably, the thickness of the quantum dot diaphragm is no more than 120 microns.
Preferably, the thickness of the quantum dot diaphragm is no more than 100 microns.
Preferably, the green light quantum point and red light quantum point include at least one of following material：Cadmium selenide, vulcanization
Cadmium, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The invention also provides a kind of backlight module, the backlight module includes quantum dot diaphragm as described above.
The invention also provides a kind of preparation method of quantum dot diaphragm, comprise the following steps：Obtain green quantum dispensing
Liquid and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basalis
Upper and lower surface, solidify to form the first quantum dot layer, polyesters basalis, the composite construction of the second quantum dot layer；Institute
The upper and lower surface for stating composite construction deposits the first barrier layer and the second barrier layer respectively.
Preferably, the deposition is realized by magnetron sputtering, plasma chemical vapor deposition or atomic vapor deposition.
The new quantum dot diaphragm of the present invention, changes the quantum dot diaphragm structure design of prior art, simplifies technique,
Effectively reduce cost, it is easier to obtain relatively thin quantum dot film, and avoid the self-absorption that red green quantum dot mixing causes and show
As.
Brief description of the drawings
Fig. 1 is the structural representation of quantum dot diaphragm in the present invention.
Embodiment
Below in conjunction with embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, shown
So, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Mode, belongs to the scope of the present invention.
With reference to Fig. 1, the invention discloses a kind of new quantum dot diaphragm 100, including the first barrier layer set gradually
102nd, the first quantum dot layer 104, basalis 106, the second quantum dot layer 108, the second barrier layer 110.First quantum dot layer 104 is wrapped
The green light quantum point 114 being dispersed in polymeric material 112 is included, the second quantum dot layer 108 includes being dispersed in polymerization
Red light quantum point 116 in thing material 112.First barrier layer 102 is deposited on the first quantum dot layer 104, the second barrier layer 110
It is deposited on the second quantum dot layer 108.
First barrier layer 102 is identical with the structure of the second barrier layer 110.First barrier layer 102 includes being used to obstruct water oxygen
Inorganic coating 118 and protective coating 120.Inorganic coating 118 is positioned adjacent to the side of the first quantum dot layer 104, protective coating
120 are arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to that the water oxygen being made up of inorganic material obstructs energy
The strong barrier layer of power, inorganic material effectively stops aqueous vapor and the effect of oxygen by being reached in the dense arrangement of atomic level.
One preferred embodiment in, inorganic coating 118 include aluminum oxide, aluminium nitride, aluminum oxynitride, titanium oxide, titanium nitride, nitrogen oxygen
Change at least one of titanium, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, carborundum, silicon oxynitride, graphene.At one
In preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.The deposition process of inorganic coating 118 is preferred
Including injection, sputtering, evaporation, vacuum moulding machine, plasma chemical vapor deposition or ald.In a preferred implementation
In mode, inorganic coating 118 is formed by magnetron sputtering.The material of protective coating 120 is preferably acrylic resin, and thickness is 8-
12 microns.
Protective coating 120 includes poly- silicones, poly epoxy resin, polyurethane, makrolon, poly- fluororesin, poly- methyl-prop
E pioic acid methyl ester, polyformaldehyde, polyethylene, Vingon, ethylene-vinyl alcohol copolymer, polyvinyl acetate, polytetrafluoroethylene (PTFE),
Polyvinyl butyral, polypropylene, polyamide, polyethylene terephthalate, PEN or poly- to benzene
Dioctyl phthalate butanediol ester, polyacrylate, polystyrene acrylonitrile resin, poly- Colombia's resin, poly- CR-39 resins, poly- OZ
Series plastics, poly- TS-26 resins, poly- APO resins, poly- MR resins, poly- MH resins, poly- NAS resins, poly- ADC resins, poly- TOPAS
At least one of resin, poly- ARTON resins.Preferably, 5%-10% diffusion particle, particle are added with protective coating 120
Particle diameter is 5-10 microns.Second barrier layer 110 is identical with the composition structure of the first barrier layer 102.
Basalis 106 is preferably polyester material, it is preferable that basalis 106 is by polyethylene terephthalate shape
Into polyester film.Preferably, 5%-10% diffusion particle is added with basalis 106, particle diameter is 5-10 microns.Substrate
Layer not only act as the effect for separate red green quantum dot layer, also make the first quantum dot layer, basalis, the second quantum dot layer formed answer
Close the deposition that structure preferably adapts to inorganic barrier layer, it is to avoid cause quantum dot because quantum dot layer is softer, deposition stress is excessive
Diaphragm is crimped and problem of Cracking.
In a preferred embodiment, the thickness of quantum dot diaphragm 100 is no more than 120 microns, and wherein basalis 106 is thick
It is 25 microns -100 microns to spend scope, and the first quantum dot layer 104 and the thickness range of the second quantum dot layer 110 are 20 micron -50
Micron.Preferably, the thickness of quantum dot diaphragm 100 is no more than 100 microns.It is highly preferred that the thickness of quantum dot diaphragm 100 does not surpass
Cross 80 microns.
Green light quantum point 114 and red light quantum point 116 comprising silicon class quantum dot, IIB-VIA compounds of group quantum dot,
IIIA-VA compounds of group quantum dot, VA-VIA compounds of group quantum dot, the mixing of perovskite quantum dot and above-mentioned various quantum dots
One kind in thing.IIB-VIA compounds of group quantum dot include from by CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe,
HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、
CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、
The one kind selected in the group of CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe composition.IIIA‐
VA compounds of group quantum dot include from by GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs,
GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、
The one kind selected in the group of GaInNAs, GaInPAs, InAlNP, InAlNAs and InAlPAs composition.The side of being preferable to carry out
In formula, quantum dot is core shell structure.In a preferred embodiment, green light quantum point and red light quantum point include following material
At least one of：Cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The polymeric material 112 of scattered quantum dot preferably includes to be modified poly- silicones, modified polyurethane, modified poly-epoxy tree
At least one of fat, modified polypropene acid resin.More there is choosing, it is good to oil-soluble quantum dot dissolubility that polymeric material is selected from
And the strong poly- epoxy modified acrylic resin of water oxygen obstructing capacity.Preferably, also it is added with 5%-10%'s in polymeric material
Diffusion particle, particle diameter is 5-10 microns.
Cause the inorganic defect of coating 118 for the irregularities that avoid luminescent layer, cause the water oxygen barrier of inorganic coating 118
Can be not enough, in one preferred embodiment, one layer of smooth finish (figure is provided between quantum dot layer and inorganic coating 118
Not shown in), the surface roughness of smooth finish is less than 100 nanometers.Smooth finish can by chemical vapour deposition technique, etc. from
It is prepared by the methods such as daughter coating.
Backlight module, display device or light-emitting device can be prepared using the quantum dot diaphragm 100 of the present invention.Display dress
Put including TV, mobile phone, wrist-watch etc..The quantum dot diaphragm 100 of the present invention is preferably used on mobile phone.In backlight module, quantum
Point diaphragm arrangement is on LED light direction.
The invention also provides a kind of preparation method of quantum dot diaphragm 100, comprise the following steps：Obtain green light quantum point
Glue and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basalis
Upper and lower surface, solidify to form the first quantum dot layer 104, polyesters basalis 106, second quantum dot layer 108 and answer
Close structure；Smooth finish, inorganic coating, organic layer, inorganic coating, protection are sequentially depositing in the upper and lower surface of the composite construction
Coating, forms the first barrier layer 102 and the second barrier layer 110.Preferably, deposition passes through magnetron sputtering, Both Plasma Chemical Vapor
Deposition is realized.
In a detailed embodiment, the first barrier layer 102 is identical with the structure of the second barrier layer 110, the first barrier layer
102 include the inorganic coating 118 and protective coating 120 for obstructing water oxygen.Inorganic coating 118 is positioned adjacent to the first quantum dot
The side of layer 104, protective coating 120 is arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to by inorganic
The strong barrier layer of water oxygen obstructing capacity that material is constituted, inorganic material in the dense arrangement of atomic level by reaching effective stop
The effect of aqueous vapor and oxygen.In one preferred embodiment, inorganic coating 118 includes aluminum oxide, aluminium nitride, nitrogen oxidation
Aluminium, titanium oxide, titanium nitride, titanium oxynitrides, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, carborundum, silicon oxynitride, graphite
At least one of alkene.In one preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.
Although inventor has done more detailed elaboration and enumerated to technical scheme, it will be appreciated that for
For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious
, can not all depart from the essence of spirit of the present invention, the term occurred in the present invention be used for elaboration to technical solution of the present invention and
Understand, can not be construed as limiting the invention.
Claims (12)
1. a kind of quantum dot diaphragm, it is characterised in that including the first barrier layer set gradually, the first quantum dot layer, basalis,
Second quantum dot layer, the second barrier layer, first quantum dot layer include the green quantum being dispersed in polymeric material
Point, second quantum dot layer includes the red light quantum point for being dispersed in polymeric material, and first barrier layer is deposited on
On first quantum dot layer, second barrier layer is deposited on second quantum dot layer.
2. quantum dot diaphragm according to claim 1, it is characterised in that the base layer thickness scope is 25 micron -100
Micron, first quantum dot layer and the second quantum dot layer thickness range are 20 microns -50 microns.
3. quantum dot diaphragm according to claim 1 or 2, it is characterised in that first barrier layer and second resistance
The thickness range of interlayer is 200 nanometers -2 microns.
4. quantum dot diaphragm according to claim 1, it is characterised in that the basalis is by poly terephthalic acid second two
The polyester film of alcohol ester formation.
5. quantum dot diaphragm according to claim 1, it is characterised in that first barrier layer and second barrier layer
Include inorganic coating and protective coating.
6. quantum dot diaphragm according to claim 5, it is characterised in that first barrier layer and second barrier layer
Including alternate organic layer and inorganic coating, and protective coating.
7. the quantum dot diaphragm according to claim 5 or 6, it is characterised in that the inorganic coating be alumina layer or
Silicon oxide layer.
8. quantum dot diaphragm according to claim 1, it is characterised in that the thickness of the quantum dot diaphragm is no more than 120
Micron.
9. quantum dot diaphragm according to claim 1, it is characterised in that the green light quantum point and red light quantum point include
At least one of following material：Cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
10. a kind of backlight module, it is characterised in that the backlight module includes any described quantum dot in claim 1-9
Diaphragm.
11. a kind of preparation method of quantum dot diaphragm, it is characterised in that comprise the following steps：Obtain green light quantum point glue and
Red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in the upper table in polyesters basalis
Face and lower surface, solidify to form the first quantum dot layer, polyesters basalis, the composite construction of the second quantum dot layer；Described multiple
The upper and lower surface for closing structure deposits the first barrier layer and the second barrier layer respectively.
12. preparation method according to claim 1, it is characterised in that the deposition passes through magnetron sputtering, plasma chemical
Vapour deposition or atomic vapor deposition are realized.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710604041.5A CN107329319A (en) | 2017-07-21 | 2017-07-21 | Quantum dot diaphragm and preparation method thereof, backlight module |
| CN201810766823.3A CN109031777A (en) | 2017-07-21 | 2018-07-13 | Quantum dot diaphragm and preparation method thereof and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710604041.5A CN107329319A (en) | 2017-07-21 | 2017-07-21 | Quantum dot diaphragm and preparation method thereof, backlight module |
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| Publication Number | Publication Date |
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| CN107329319A true CN107329319A (en) | 2017-11-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710604041.5A Pending CN107329319A (en) | 2017-07-21 | 2017-07-21 | Quantum dot diaphragm and preparation method thereof, backlight module |
| CN201810766823.3A Pending CN109031777A (en) | 2017-07-21 | 2018-07-13 | Quantum dot diaphragm and preparation method thereof and backlight module |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810766823.3A Pending CN109031777A (en) | 2017-07-21 | 2018-07-13 | Quantum dot diaphragm and preparation method thereof and backlight module |
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| CN108469646A (en) * | 2018-01-22 | 2018-08-31 | 南京贝迪电子有限公司 | Quantum dot light guiding film and preparation method thereof |
| CN109445184A (en) * | 2018-12-19 | 2019-03-08 | 惠州市华星光电技术有限公司 | Liquid crystal display |
| CN110962427A (en) * | 2019-11-25 | 2020-04-07 | Tcl华星光电技术有限公司 | Quantum dot film |
| CN112051686A (en) * | 2019-06-05 | 2020-12-08 | 睿亚光电股份有限公司 | Wavelength conversion element |
| CN112420898A (en) * | 2019-08-23 | 2021-02-26 | 致晶科技（北京）有限公司 | Packaging method of quantum dot film, packaged quantum dot film and application |
| CN114241896A (en) * | 2021-12-14 | 2022-03-25 | 广州华星光电半导体显示技术有限公司 | Quantum dot film and manufacturing method thereof, backlight module and display device |
| CN114755861A (en) * | 2022-06-15 | 2022-07-15 | 广东欧迪明光电科技股份有限公司 | High-efficiency quantum dot optical substrate and preparation method thereof |
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2017
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2018
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| CN114241896A (en) * | 2021-12-14 | 2022-03-25 | 广州华星光电半导体显示技术有限公司 | Quantum dot film and manufacturing method thereof, backlight module and display device |
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| CN114755861A (en) * | 2022-06-15 | 2022-07-15 | 广东欧迪明光电科技股份有限公司 | High-efficiency quantum dot optical substrate and preparation method thereof |
| CN114755861B (en) * | 2022-06-15 | 2023-01-06 | 广东欧迪明光电科技股份有限公司 | High-efficiency quantum dot optical substrate and preparation method thereof |
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