CN107314887B - Method for estimating absolute light response rate of photomultiplier under low light intensity condition - Google Patents
Method for estimating absolute light response rate of photomultiplier under low light intensity condition Download PDFInfo
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- CN107314887B CN107314887B CN201710451510.4A CN201710451510A CN107314887B CN 107314887 B CN107314887 B CN 107314887B CN 201710451510 A CN201710451510 A CN 201710451510A CN 107314887 B CN107314887 B CN 107314887B
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- G—PHYSICS
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
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- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Abstract
The invention relates to the field of optical measurement, and discloses a method for estimating absolute light response rate of a photomultiplier under the condition of low light intensity, wherein a silicon photodiode is used as a reference for calibrating absolute light power of the photomultiplier to be measured, and the incident light power is 10 ‑6 W to 10 ‑11 Calibration of silicon photodiode nonlinearity, linearity under WWherein the method comprises the steps of Silicon photodiode output signal I A+B (k) Is of non-linearity of (2)Output signal I of photomultiplier to be measured C+D (k) Is of non-linearity of (2)Determination of photomultiplier at incident light power of 10 ‑11 Absolute response under W; estimated at optical power of 10 ‑16 Absolute light response at W; obtaining the photomultiplier to be tested at 10 ‑11 W to 10 ‑16 Absolute light response ratio in the W range.
Description
Technical Field
The invention relates to the field of optical measurement, in particular to a method for estimating absolute light response rate of a photomultiplier under a low light intensity condition by utilizing nonlinear correction to estimate the absolute light response rate of the photomultiplier.
Background
The measurement of extremely low power light plays an important role in scientific research and industrial application, such as astronomical observation, nuclear radiation detection, bioluminescence detection, spectroscopy measurement and the like, and photomultiplier tubes are used in a photoelectric detector to measure low power light in a visible light region; the most commonly used method for accurately measuring absolute light response rate is to compare the measurement result of the detector to be measured with the data of a calibrated reference light source or photodetector. The prior art has the defect that the absolute light response rate estimation and the linearity measurement are carried out separately, and the light response rate of a photomultiplier tube in a wide power range is not sufficiently estimated by virtue of the experimental results only for a certain spectral range or a certain narrow light power range, and the problem can be solved by a method for estimating the absolute light response rate of the photomultiplier tube under the condition of low light intensity.
The responsivity of a photodiode, which is typically a function of the wavelength of the input radiation, is the ratio of its output current signal to the input radiation; a photodiode is said to be linear if its responsivity does not vary with the amount of input radiation, linearity being one of the fundamental requirements for precision measurement of optical radiation, especially in the fields of photometry and radiometry, in which the superposition method is a fundamental method, as known from the literature [ Sanders, c.l.j.res.Natl bur.stand.a1972, 76, 437 ] and the literature [ Sanders, c.l.appl.opt.1962,1, 207 ], the principle of the superposition method for measuring nonlinearity is that the light response generated by two light sources in the photodiode to be measured, respectively, is N 1 And N 2 The sum of the light of the two light sources produces a light response in the photodiode to be measured of N 12 If N 1 +N 2 ＝N 12 The photodiode under test can be considered linear if N 1 +N 2 ≠-N 12 Then the nonlinearity can be defined by N 12 /(N 1 +N 2 ) Given. Two different light sources or one light source and two different diaphragms may be used in the above method.
Disclosure of Invention
In order to solve the problems, the invention utilizes nonlinear correction to estimate the absolute optical response rate of the photomultiplier, and the absolute optical response rate is estimated by comparing the absolute optical response rate with the result obtained by the calibrated optical attenuator, so that the power range in the visible light range is wide, and the lowest optical power can be close to the single photon level.
The invention provides a method for estimating the light response rate of a photomultiplier under the irradiation of visible light with single photon level light power, which is based on three factors: the spectral response rate of the calibrated silicon photodiode; the response rate of the calibrated silicon photodiode is converted into a photomultiplier; nonlinear correction of silicon photodiodes and photomultiplier tubes.
The technical scheme adopted by the invention is as follows:
the device mainly comprises a laser, an attenuator I, a camera bellows, a beam splitter I, an attenuator II, a plane mirror I, a shutter II, a plane mirror II, a beam splitter II, a cassette, a silicon photodiode and a photomultiplier to be tested, wherein the beam splitter I, the attenuator II, the plane mirror I, the shutter II, the plane mirror II, the beam splitter II, the cassette, the silicon photodiode and the photomultiplier to be tested are all positioned in the camera bellows, the silicon photodiode and the photomultiplier to be tested are positioned in the cassette, the laser emits laser to the beam splitter I through the attenuator I, an optical path I is formed by the laser, the attenuator I, the beam splitter I, the shutter I, the plane mirror II, the beam splitter II and the silicon photodiode, the optical path II is formed by the laser, the attenuator I, the beam splitter I, the attenuator II, the plane mirror I, the shutter II, the beam splitter II and the silicon photodiode, the optical path I, the attenuator II and the silicon photodiode, the optical axis of a certain angle and the optical axis of a measuring system are all provided so that the incident power of the silicon photodiode is prevented from being inclined at 10 -6 The response ratio under the W condition is known, the linearity under different light power conditions is measured by adjusting the parameters of the attenuator I and the attenuator II, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode can be measured under the condition of 10 -6 W to 10 -16 W varies within the range.
The method for estimating the absolute light response rate of the photomultiplier under the condition of low light intensity comprises the following steps:
the silicon photodiode is used as a reference for calibrating the absolute optical power of the photomultiplier to be measured, at an incident optical power of 10 -6 W to 10 -11 And under the condition of W range, calibrating the nonlinearity of the silicon photodiode, wherein the method sequentially comprises the following steps: two light beams are collimated by adjusting the plane mirror I, the plane mirror II and the beam splitter II and are overlapped at the same point of the center of the optical sensor, in an initial state, the shutter I and the shutter II are closed, then the shutter I is opened, and the output signal I of the silicon photodiode is measured A Then the shutter II is opened to measure the output of the silicon photodiodeSignal I A+B Then the shutter I is closed, and the output signal I of the silicon photodiode is measured B Then the shutter I is opened, and the output signal I 'of the silicon photodiode is measured' B+A Then the shutter II is closed, and the output signal I 'of the silicon photodiode is measured' A The linearity is obtained byWherein->k represents one of the above n groups, the method of calculating linearity can eliminate the laser drift effect generated by the attenuator in the linearity measurement experiment, and finally, the linearity under each optical power condition is multiplied to obtain the silicon photodiode output signal I A+B (k) Is>
Second, at an incident light power of 10 -6 W to 10 -11 And calibrating the nonlinearity of the photomultiplier to be measured under the condition of W range, wherein the method sequentially comprises the following steps: removing the silicon photodiode, placing the photomultiplier to be tested at the position of the original silicon photodiode, collimating two beams of light by adjusting a plane mirror I, a plane mirror II and a beam splitter II and overlapping at the same point of the center of the optical sensor, closing both the shutter I and the shutter II in an initial state, opening the shutter I, and measuring an output signal I of the photomultiplier to be tested at the moment C Then the shutter II is opened to measure the output signal I of the photomultiplier to be measured C+D Then the shutter I is closed to measure the output signal I of the photomultiplier to be measured D Then the shutter I is opened to measure the output signal I 'of the photomultiplier to be measured' D+C Then the shutter II is closed to measure the output signal I 'of the photomultiplier to be measured' C The linearity is obtained byWherein->The linearity under different light power conditions is measured by adjusting the parameters of the attenuator I and the attenuator II, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode can be measured at the power level of 10 -6 W to 10 -16 W varies within a range, k represents a set of conditions in the n groups, the method for calculating the linearity can eliminate the laser drift effect generated by an attenuator in a linearity measurement experiment, and finally, the linearity under each light power condition is multiplied to obtain the output signal I of the photomultiplier to be measured C+D (k) Is of non-linearity of (2)
Third, at an incident light power of 10 -11 Under the condition of W, the calibrated silicon photodiode and the photomultiplier to be tested are used for measuring incident light respectively, and the light path II is used for measuring, and the measured optical power data of the calibrated silicon photodiode and the optical power data of the photomultiplier to be tested are compared, and the method sequentially comprises the following steps: firstly, placing the silicon photodiode in the light path II, measuring absolute incident laser power by using the calibrated silicon photodiode, secondly, removing the silicon photodiode, placing a photomultiplier to be measured at the position of the original silicon photodiode, measuring the light response of the photomultiplier to the incident laser, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement in the first step, repeating the steps for ten times, finally, calculating the ratio of the incident light power measured by the photomultiplier to the incident light power measured by the silicon photodiode, and determining that the incident light power of the photomultiplier is 10 -11 Absolute response under W;
fourth, estimating the incident light power 10 of the photomultiplier to be measured -16 The nonlinear characteristic under the condition of W is combined with the response rate-incident light power curve obtained in the third step, and the fitting method is adopted to estimate the light power to be 10 -16 Absolute light response at W;
fifthly, finally obtaining the photomultiplier to be tested at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
The beneficial effects of the invention are as follows:
the invention can be used for generating the visible light with the power of 10 -11 W to 10 -16 The method for calculating linearity can eliminate the laser drift effect generated by the attenuator in the linearity measurement experiment and eliminate the dependence of the transmission ratio of the attenuator on the wavelength and time in a series of linearity measurement.
Drawings
The following is further described in connection with the figures of the present invention:
FIG. 1 is a schematic diagram of the present invention.
In the figure, a laser, an attenuator I, a camera, a beam splitter I, an attenuator II, a plane mirror I, a shutter II, a shutter 9, a plane mirror II, a beam splitter 11, a cassette 12, a silicon photodiode and a photomultiplier to be measured.
Detailed Description
As shown in FIG. 1, the device mainly comprises a laser 1, an attenuator I2, a camera bellows 3, a beam splitter I4, an attenuator II5, a plane mirror I6, a shutter I7, a shutter II8, a plane mirror II9, a beam splitter II10, a cassette 11, a silicon photodiode 12 and a photomultiplier 13 to be measured, wherein the beam splitter I4, the attenuator II5, the plane mirror I6, the shutter I7, the shutter II8, the plane mirror II9, the beam splitter II10, the cassette 11, the silicon photodiode 12 and the photomultiplier 13 to be measured are all positioned in the camera bellows 3, the silicon photodiode 12 and the photomultiplier 13 to be measured are positioned in the camera bellows 11, the laser 1 emits laser to the photo 4 through the attenuator I2, an optical path I is formed by the laser 1, the beam splitter I2, the beam splitter I4, the shutter I7, the plane mirror II9, the beam splitter II10 and the silicon photodiode 12, the optical path I is formed by the laser 1, the attenuator I2, the beam splitter II 4, the attenuator II5, the attenuator II 6, the plane mirror II8, the silicon photodiode 12, the optical path II, the system II and the optical path II is formed by the beam splitter II, the optical path II and the optical path II is measured by the optical path II and the optical path II is measured by the attenuator II 2 and the optical path IITo avoid interference, the silicon photodiode 12 is at the incident optical power 10 -6 The response ratio under W is known, the linearity under different light power conditions is measured by adjusting the parameters of the attenuator I2 and the attenuator II5, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode 12 can be measured under the condition of the light power from 10 -6 W to 10 -16 W varies within the range.
The method for estimating the absolute light response rate of the photomultiplier under the condition of low light intensity comprises the following steps:
use of the silicon photodiode 12 as a reference for calibrating the absolute optical power of the photomultiplier 13 under test, at an incident optical power of 10 -6 W to 10 -11 The nonlinearity of the silicon photodiode 12 is calibrated under the condition of W range by the following methods in order: by adjusting the plane mirror I6, the plane mirror II9 and the beam splitter II10 to collimate the two light beams and overlap at the same point in the center of the optical sensor, in the initial state, the shutter I7 and the shutter II8 are both closed, then the shutter I7 is opened, and the output signal I of the silicon photodiode 12 is measured A Then the shutter II8 is opened to measure the output signal I of the silicon photodiode 12 A+B The shutter I7 is closed again, and the output signal I of the silicon photodiode 12 is measured B The shutter I7 is opened again, and the output signal I 'of the silicon photodiode 12 is measured' B+A The shutter II8 is closed again, and the output signal I 'of the silicon photodiode 12 is measured' A The linearity is obtained byWherein-> k represents one set of conditions in the above n sets, the method of calculating linearity is capable of eliminating the laser drift effect generated by the attenuator in the linearity measurement experiment, and finally, the linearity under each optical power conditionMultiplying to obtain the output signal I of the silicon photodiode 12 A+B (k) Is>
Second, at an incident light power of 10 -6 W to 10 -11 And under the condition of W range, calibrating the nonlinearity of the photomultiplier 13 to be tested, wherein the method sequentially comprises the following steps: removing the silicon photodiode 12, placing the photomultiplier 13 to be tested at the position of the original silicon photodiode 12, collimating two beams of light by adjusting the plane mirror I6, the plane mirror II9 and the beam splitter II10 and overlapping at the same point of the center of the optical sensor, closing both the shutter I7 and the shutter II8 in the initial state, opening the shutter I7, and measuring the output signal I of the photomultiplier 13 to be tested at the moment C Then the shutter II8 is opened to measure the output signal I of the photomultiplier 13 to be measured C+D Then the shutter I7 is closed to measure the output signal I of the photomultiplier 13 to be measured D Then the shutter I7 is opened to measure the output signal I 'of the photomultiplier 13 to be measured' D+C Then the shutter II8 is closed, and the output signal I 'of the photomultiplier 13 to be tested is measured' C The linearity is obtained byWherein-> Linearity under different optical power conditions is measured by adjusting parameters of the attenuator I2 and the attenuator II5, and n groups of attenuator parameters are provided so that the optical power incident on the silicon photodiode 12 can be measured at a power level of 10 -6 W to 10 -16 W varies within a range, k represents a set of conditions in the n groups, the method for calculating the linearity can eliminate the laser drift effect generated by an attenuator in a linearity measurement experiment, and finally, the linearity under each light power condition is multiplied to obtain the photoelectric to be measuredMultiplier tube 13 outputs a signal I C+D (k) Is>
Third, at an incident light power of 10 -11 Under the condition of W, the calibrated silicon photodiode 12 and the photomultiplier 13 to be tested are used for measuring incident light respectively, and the light path II is used for measuring, and the measured optical power data of the calibrated silicon photodiode 12 and the optical power data of the photomultiplier 13 to be tested are compared, and the method sequentially comprises the following steps: firstly, placing the silicon photodiode 12 in the optical path II, measuring absolute incident laser power by using the calibrated silicon photodiode 12, secondly, removing the silicon photodiode 12, placing the photomultiplier 13 to be measured at the position of the original silicon photodiode 12, measuring the light response of the photomultiplier to the incident laser, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement in the first step, repeating the steps for ten times, finally, calculating the ratio of the incident light power measured by the photomultiplier 13 to the incident light power measured by the silicon photodiode 12, and determining that the incident light power of the photomultiplier is 10 -11 Absolute response under W;
fourth, estimating the incident light power 10 of the photomultiplier 13 to be measured -16 The nonlinear characteristic under the condition of W is combined with the response rate-incident light power curve obtained in the third step, and the fitting method is adopted to estimate the light power to be 10 - 16 Absolute light response at W;
fifthly, finally obtaining the photomultiplier 13 to be tested at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
The method for estimating the absolute light response rate of the photomultiplier under the condition of low light intensity utilizes nonlinear correction to estimate the absolute light response rate of the photomultiplier, can estimate the response rate of incident light in a wider power range, and has the lowest light intensity close to the single photon level.
Claims (1)
1. Estimating photomultiplier tube positionThe device mainly comprises a laser (1), an attenuator I (2), a camera bellows (3), a beam splitter I (4), an attenuator II (5), a plane mirror I (6), a shutter I (7), a shutter II (8), a plane mirror II (9), a beam splitter II (10), a cassette (11), a silicon photodiode (12) and a photomultiplier to be tested (13), wherein the beam splitter I (4), the attenuator II (5), the plane mirror I (6), the shutter I (7), the shutter II (8), the plane mirror II (9), the beam splitter II (10), the cassette (11), the silicon photodiode (12) and the photomultiplier to be tested (13) are all positioned in the camera bellows (3), the silicon photodiode (12) and the photomultiplier to be tested (13) are positioned in the camera bellows (11), and the laser (1) emits laser light to the beam splitter I (4) through the attenuator I (2), and the laser (1), the attenuator I (4), the shutter II (7), the plane mirror I (9), the beam splitter I (2) and the light path II (2) are formed by the laser light path II (2) and the laser diode (12) The beam splitter I (4), the attenuator II (5), the plane mirror I (6), the shutter II (8), the beam splitter II (10) and the silicon photodiode (12) form a light path II, the attenuator I (2), the attenuator II (5) and the optical axis of the measuring system are inclined at a certain angle to avoid interference, and the silicon photodiode (12) is arranged at the incident light power 10 -6 The response under W is known, the linearity under different light power conditions is measured by adjusting the parameters of the attenuator I (2) and the attenuator II (5), n groups of attenuator parameters are provided so that the light power incident on the silicon photodiode (12) can be measured at a value of 10 -6 W to 10 -16 The range of W varies within the range of W,
the method is characterized in that: the method for estimating the absolute light response rate of the photomultiplier under the condition of low light intensity comprises the following steps:
use of the silicon photodiode (12) as a reference for calibrating the absolute optical power of the photomultiplier (13) under test, at an incident optical power of 10 -6 W to 10 -11 And calibrating the nonlinearity of the silicon photodiode (12) under the condition of W range, wherein the method sequentially comprises the following steps: two light beams are collimated by adjusting the plane mirror I (6), the plane mirror II (9) and the beam splitter II (10) and overlapped at the same point of the center of the optical sensor, in an initial state, the shutter I (7) and the shutter II (8) are both closed, and then the shutter I (7) is opened,measuring the output signal I of the silicon photodiode (12) at the time A Then the shutter II (8) is opened, and the output signal I of the silicon photodiode (12) is measured A+B The shutter I (7) is closed again, and the output signal I of the silicon photodiode (12) is measured B Then the shutter I (7) is opened, and the output signal I 'of the silicon photodiode (12) is measured' B+A The shutter II (8) is closed again, and the output signal I 'of the silicon photodiode (12) is measured' A The linearity is obtained byWherein->k represents one of the above n groups, said method of calculating linearity being capable of eliminating the laser drift effect produced by the attenuator in the linearity measurement experiment, and finally multiplying the linearity at each optical power condition to obtain the silicon photodiode (12) output signal I A+B (k) Is>
Second, at an incident light power of 10 -6 W to 10 -11 And (3) calibrating the nonlinearity of the photomultiplier (13) to be measured under the condition of W range, wherein the method sequentially comprises the following steps: removing the silicon photodiode (12), placing the photomultiplier (13) to be tested at the position of the original silicon photodiode (12), collimating two light beams by adjusting the plane mirror I (6), the plane mirror II (9) and the beam splitter II (10) and overlapping at the same point of the center of the optical sensor, closing the shutter I (7) and the shutter II (8) in the initial state, opening the shutter I (7), and measuring the output signal I of the photomultiplier (13) to be tested at the moment C Then the shutter II (8) is opened to measure the output signal I of the photomultiplier (13) to be measured C+D Then the shutter I (7) is closed, and the output signal I of the photomultiplier (13) to be tested is measured D Then the shutter I (7) is opened to measure the output signal I 'of the photomultiplier (13) to be measured' D+C Shutter II (8)) Measuring the output signal I 'of the photomultiplier (13) to be measured' C The linearity is obtained byWherein the method comprises the steps ofLinearity under different optical power conditions is measured by adjusting the parameters of the attenuator I (2) and the attenuator II (5), n groups of attenuator parameters are provided so that the optical power incident on the silicon photodiode (12) can be measured at a value of 10 -6 W to 10 -16 W, k represents a set of conditions in the n groups, the method for calculating linearity can eliminate the laser drift effect generated by the attenuator in the linearity measurement experiment, and finally, the linearity under each light power condition is multiplied to obtain the output signal I of the photomultiplier (13) to be measured C+D (k) Is of non-linearity of (2)
Third, at an incident light power of 10 -11 Under the condition of W, the calibrated silicon photodiode (12) and the photomultiplier to be tested (13) are used for measuring incident light and measuring in the light path II, and the measured optical power data of the calibrated silicon photodiode (12) and the optical power data of the photomultiplier to be tested (13) are compared, and the method sequentially comprises the following steps: firstly, placing the silicon photodiode (12) in the light path II, measuring absolute incident laser power by using the calibrated silicon photodiode (12), secondly, removing the silicon photodiode (12), placing a photomultiplier (13) to be measured at the position of the original silicon photodiode (12), measuring the light response of the photomultiplier to incident laser, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement in the first step, repeating the steps for ten times, finally, calculating the ratio of the incident light power measured by the photomultiplier (13) to the incident light power measured by the silicon photodiode (12), and determining that the incident light power of the photomultiplier is 10 -11 Absolute response under W;
fourth, estimating the incident light power 10 of the photomultiplier (13) to be measured -16 The nonlinear characteristic under the condition of W is combined with the response rate-incident light power curve obtained in the step three, and the fitting method is adopted to estimate the light power to be 10 -16 Absolute light response at W;
fifthly, finally obtaining the photomultiplier (13) to be tested at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281897A (en) * | 1979-01-10 | 1981-08-04 | Fletcher Taylor C | Photometric system including a time-division optical attenuator |
| CN101354287A (en) * | 2007-07-24 | 2009-01-28 | 杭州远方光电信息有限公司 | Spectrometer and method for correcting the same |
| CN102384761A (en) * | 2011-08-15 | 2012-03-21 | 西北核技术研究所 | Method for calibrating absolute spectral response ratio of photoelectric detector |
| CN103018011A (en) * | 2012-11-29 | 2013-04-03 | 中国科学院光电技术研究所 | System and method for measuring transmittance of variable optical attenuator |
| CN103616674A (en) * | 2013-12-18 | 2014-03-05 | 黑龙江大学 | Method for measuring optimal local oscillation optical power of photoelectric detector |
| CN105092477A (en) * | 2015-08-26 | 2015-11-25 | 中国工程物理研究院激光聚变研究中心 | Optical nonlinearity measuring device and measuring method for nonlinearity thick photonics materials |
-
2017
- 2017-06-08 CN CN201710451510.4A patent/CN107314887B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281897A (en) * | 1979-01-10 | 1981-08-04 | Fletcher Taylor C | Photometric system including a time-division optical attenuator |
| CN101354287A (en) * | 2007-07-24 | 2009-01-28 | 杭州远方光电信息有限公司 | Spectrometer and method for correcting the same |
| CN102384761A (en) * | 2011-08-15 | 2012-03-21 | 西北核技术研究所 | Method for calibrating absolute spectral response ratio of photoelectric detector |
| CN103018011A (en) * | 2012-11-29 | 2013-04-03 | 中国科学院光电技术研究所 | System and method for measuring transmittance of variable optical attenuator |
| CN103616674A (en) * | 2013-12-18 | 2014-03-05 | 黑龙江大学 | Method for measuring optimal local oscillation optical power of photoelectric detector |
| CN105092477A (en) * | 2015-08-26 | 2015-11-25 | 中国工程物理研究院激光聚变研究中心 | Optical nonlinearity measuring device and measuring method for nonlinearity thick photonics materials |
Non-Patent Citations (1)
| Title |
|---|
| 硅陷阱探测器绝对光谱响应率校准实验研究;史学舜 等;光学与光电技术;第07卷(第05期);第63-65页 * |
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