CN107314887A - The method for estimating absolute light responsiveness of the photomultiplier under low light-intensity conditions - Google Patents
The method for estimating absolute light responsiveness of the photomultiplier under low light-intensity conditions Download PDFInfo
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- CN107314887A CN107314887A CN201710451510.4A CN201710451510A CN107314887A CN 107314887 A CN107314887 A CN 107314887A CN 201710451510 A CN201710451510 A CN 201710451510A CN 107314887 A CN107314887 A CN 107314887A
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Abstract
The present invention relates to field of optical measurements, the method for absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions, silicon photoelectric diode, as the reference for the absolute light power for calibrating photomultiplier to be measured, is 10 in incident optical power‑6W to 10‑11Non-linear, the linearity of silicon photoelectric diode is calibrated under WWherein Silicon photoelectric diode output signal IA+B(k) nonlinearityPhotomultiplier output signal I to be measuredC+D(k) nonlinearityIt is 10 in incident optical power to determine photomultiplier‑11Absolute response rate under the conditions of W；Estimation is 10 in luminous power‑16Absolute light responsiveness during W；The photomultiplier to be measured is obtained 10‑11W to 10‑16The absolute light responsiveness of W scopes.
Description
Technical field
It is particularly a kind of to be rung using non-liner revision estimation photomultiplier absolute light the present invention relates to field of optical measurements
Should rate absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions method.
Background technology
The measurement of extremely low power light is played an important role in scientific research and commercial Application, and such as astronomical observation, nuclear radiation is visited
In terms of survey, bioluminescence detection and spectroscopy measurement, it is used for using photomultiplier visible to measure in photodetector
The low-power light in light region；The method of the most frequently used accurate measurement absolute light responsiveness be by the measurement result of detector to be measured with
The data of reference light source or photodetector after one calibration are contrasted.The defect of currently available technology is, to absolute light
The estimation of responsiveness and linearity measure are carried out separately, and are only for some spectral region or some is narrower
Reference optical power, by these experimental results be not enough to estimate photomultiplier measurement broad power band photoresponse rate,
The method of absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions can solve problem.
The responsiveness of one photodiode refers to the current signal and the ratio of the amount of radiation of input of its output, responsiveness
The typically function of input radiation wavelength；If the responsiveness of a photodiode does not change with the amount of input radiation,
It is called linear, the linearity is one of primary demand of optical radiation accurate measurement, especially in light measurement and actinometry
Field, in linearity measuring method, the addition method is a kind of basic method, by document【Sanders, C.L.J.Res.Natl
Bur.Stand.A1972,76,437】And document【Sanders, C.L.Appl.Opt.1962,1,207】Understand, measure non-linear
The principle of the addition method of degree is that the photoresponse that the light that two light sources are sent is produced in photodiode to be measured respectively is N1And N2,
The photoresponse that the summation of the light of two light sources is produced in photodiode to be measured is N12If, N1+N2=N12, then can consider
Photodiode to be measured is linear, if N1+N2≠-N12, then nonlinearity can be by N12/(N1+N2) provide.Above method
In can use the different diaphragms of two different light sources or a light source and two.
The content of the invention
In order to solve the above problems, the present invention estimates photomultiplier absolute light responsiveness using non-liner revision, passes through
The result obtained with the optical attenuator after calibration is compared to estimation, minimum light wide in the power bracket of visible-range
Power can be close to single photon level.
The present invention proposes that the light under a kind of radiation of visible light of luminous power of estimation photomultiplier in single photon level rings
Should rate method, based on three factors：The spectral responsivity of silicon photoelectric diode after calibration；Silicon photoelectric diode after calibration
Conversion from responsiveness to photomultiplier；The non-liner revision of silicon photoelectric diode and photomultiplier.
The technical solution adopted in the present invention is：
The method of absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions, device mainly includes laser
Device, attenuator I, camera bellows, beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing II, beam splitter II, magazine,
Silicon photoelectric diode, photomultiplier to be measured, the beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing
II, beam splitter II, magazine, silicon photoelectric diode, photomultiplier to be measured are respectively positioned in the camera bellows, the pole of silicon photoelectricity two
Pipe, photomultiplier to be measured are located in the magazine, and the laser transmitting laser is swashed through attenuator I to beam splitter I by described
Light device, attenuator I, beam splitter I, shutter I, level crossing II, beam splitter II, silicon photoelectric diode composition light path I, by the laser
Device, attenuator I, beam splitter I, attenuator II, level crossing I, shutter II, beam splitter II, silicon photoelectric diode composition light path II, institute
The optical axis for stating attenuator I, attenuator II and measuring system is respectively provided with the inclination of certain angle to avoid interference with, the silicon photoelectricity two
Pole pipe is in incident optical power 10-6Responsiveness under the conditions of W is, it is known that being surveyed by regulated attenuator I and attenuator II parameter
The linearity under the conditions of different luminous powers is measured, if shared n group attenuator parameters, to incide the silicon photoelectric diode
Luminous power can be from 10-6W to 10-16Change in the range of W.
The method and step of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions is：
One, is used as the ginseng for the absolute light power for calibrating the photomultiplier to be measured using the silicon photoelectric diode
According to, incident optical power be 10-6W to 10-11The non-linear of the silicon photoelectric diode is calibrated under conditions of W scopes, method is successively
For：Two-beam line is collimated by adjusting level crossing I, level crossing II and beam splitter II and in the identical point at optical sensor center
Overlapping, under original state, shutter I and shutter II are turned off, next, opening shutter I, measure the now silicon photoelectric diode
Output signal IA, shutter II is then turned on, the output signal I of the now silicon photoelectric diode is measuredA+B, shutter I is turned off,
Measure the output signal I of the now silicon photoelectric diodeB, shutter I is then turned on, the defeated of the now silicon photoelectric diode is measured
Go out signal I 'B+A, shutter II is turned off, the output signal I ' of the now silicon photoelectric diode is measuredA, obtained linearly by following formula
DegreeWhereinK represents one group of bar in above-mentioned n groups
Part, the method for the calculating linearity can eliminate by linearity measure test in the laser drift effect that produces of attenuator,
Finally, the linearity under the conditions of each luminous power is multiplied, obtains the silicon photoelectric diode output signal IA+B(k) non-thread
Property degree
Two, are 10 in incident optical power-6W to 10-11The non-thread of the photomultiplier to be measured is calibrated under conditions of W scopes
Property, method is followed successively by：The silicon photoelectric diode is removed, the photomultiplier to be measured is placed in the position of former silicon photoelectric diode
Put, collimate two-beam line by adjusting level crossing I, level crossing II and beam splitter II and in the identical point at optical sensor center
Overlapping, under original state, shutter I and shutter II are turned off, next, opening shutter I, measure now photomultiplier to be measured
Output signal IC, shutter II is then turned on, the output signal I of now photomultiplier to be measured is measuredC+D, shutter I is turned off, is measured
The now output signal I of photomultiplier to be measuredD, shutter I is then turned on, the output signal of now photomultiplier to be measured is measured
I′D+C, shutter II is turned off, the output signal I ' of now photomultiplier to be measured is measuredC, the linearity is obtained by following formulaWhereinPass through regulated attenuator I and attenuator II
Parameter measure the linearity under the conditions of different luminous powers, if shared n group attenuator parameters, to incide the silicon light
The luminous power of electric diode can be from 10-6W to 10-16Change in the range of W, k represents one group of condition in above-mentioned n groups, the meter
Calculate the linearity method can eliminate by linearity measure test in attenuator produce laser drift effect, finally, will be every
The linearity under the conditions of individual luminous power is multiplied, and obtains the photomultiplier output signal I to be measuredC+D(k) nonlinearity
Three, are 10 in incident optical power-11Under conditions of W, respectively with the silicon photoelectric diode and photoelectricity to be measured times after calibration
Increase pipe measurement incident light and measured in the light path II, measure the luminous power data of the silicon photoelectric diode after calibration
It is compared with the luminous power data of photomultiplier to be measured, method is followed successively by：First, the silicon photoelectric diode is placed in institute
State in light path II, absolute incident laser power is measured using the silicon photoelectric diode after calibration, secondly, remove the pole of silicon photoelectricity two
Pipe, photomultiplier to be measured is placed in the position of former silicon photoelectric diode, and measure photomultiplier for incident laser
The position adjustment of photoresponse, wherein laser irradiation in the linearity measure of above-mentioned steps one to unanimously, being so repeated ten times, most
Afterwards, the incident optical power that the incident optical power that the calculating photomultiplier to be measured is measured is measured with the silicon photoelectric diode
Ratio, and determine the photomultiplier in incident optical power as 10 using this-11Absolute response rate under the conditions of W；
Four, estimate the photomultiplier to be measured in incident optical power 10-16Nonlinear characteristic under the conditions of W, and combine
The responsiveness obtained in above-mentioned steps three-incident optical power curve, by approximating method, is estimated in luminous power as 10 using this-16W
When absolute light responsiveness；
Five, finally obtain the photomultiplier to be measured 10-11W to 10-16The absolute light responsiveness of W scopes.
The beneficial effects of the invention are as follows：
The present invention can be 10 in visible power-11W to 10-16The photoresponse rate of photomultiplier, institute are estimated in the range of W
State calculate the linearity method can eliminate by linearity measure test in attenuator produce laser drift effect, can disappear
Except a series of dependence of the attenuator transmittance to wavelength and time in linearity measures.
Brief description of the drawings
Further illustrated with reference to the figure of the present invention：
Fig. 1 is schematic diagram of the present invention.
In figure, 1. lasers, 2. attenuator I, 3. camera bellows, 4. beam splitter I, 5. attenuator II, 6. level crossing I, 7. shutters
I, 8. shutter II, 9. level crossing II, 10. beam splitter II, 11. magazines, 12. silicon photoelectric diodes, 13. photomultipliers to be measured.
Embodiment
If Fig. 1 is schematic diagram of the present invention, device mainly includes laser 1, attenuator I2, camera bellows 3, beam splitter I4, decay
It is device II5, level crossing I6, shutter I7, shutter II8, level crossing II9, beam splitter II10, magazine 11, silicon photoelectric diode 12, to be measured
Photomultiplier 13, the beam splitter I4, attenuator II5, level crossing I6, shutter I7, shutter II8, level crossing II9, beam splitter
II10, magazine 11, silicon photoelectric diode 12, photomultiplier to be measured 13 are respectively positioned in the camera bellows 3, the silicon photoelectric diode
12nd, photomultiplier 13 to be measured is located in the magazine 11, and the laser 1 launches laser through attenuator I2 to beam splitter I4,
By the laser 1, attenuator I2, beam splitter I4, shutter I7, level crossing II9, beam splitter II10,12 groups of silicon photoelectric diode
Into light path I, by the laser 1, attenuator I2, beam splitter I4, attenuator II5, level crossing I6, shutter II8, beam splitter
II10, the composition light path II, the attenuator I2, attenuator II5 of silicon photoelectric diode 12 and measuring system optical axis are respectively provided with one
The inclination of angle is determined to avoid interference with, and the silicon photoelectric diode 12 is in incident optical power 10-6Responsiveness under the conditions of W is
Know, the linearity under the conditions of different luminous powers is measured by regulated attenuator I2 and attenuator II5 parameter, if shared n groups
Attenuator parameter, the luminous power of the silicon photoelectric diode 12 is incided from 10 to enable-6W to 10-16Become in the range of W
Change.
The method and step of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions is：
One, is used as the absolute light power of calibrating the photomultiplier 13 to be measured using the silicon photoelectric diode 12
Reference, is 10 in incident optical power-6W to 10-11Non-linear, the method for the silicon photoelectric diode 12 is calibrated under conditions of W scopes
It is followed successively by：Two-beam line is collimated by adjusting level crossing I6, level crossing II9 and beam splitter II10 and at optical sensor center
Identical point it is overlapping, under original state, shutter I7 and shutter II8 are turned off, next, open shutter I7, measure now described
The output signal I of silicon photoelectric diode 12A, shutter II8 is then turned on, the output signal of the now silicon photoelectric diode 12 is measured
IA+B, shutter I7 is turned off, the output signal I of the now silicon photoelectric diode 12 is measuredB, shutter I7 is then turned on, is measured now
The output signal I ' of the silicon photoelectric diode 12B+A, shutter II8 is turned off, the defeated of the now silicon photoelectric diode 12 is measured
Go out signal I 'A, the linearity is obtained by following formulaWherein k
Represent one group of condition in above-mentioned n groups, the method for the calculating linearity can eliminate by linearity measure test in decay
The laser drift effect that device is produced, finally, the linearity under the conditions of each luminous power is multiplied, the silicon photoelectric diode is obtained
12 output signal IA+B(k) nonlinearity
Two, are 10 in incident optical power-6W to 10-11The non-of the photomultiplier to be measured 13 is calibrated under conditions of W scopes
Linearly, method is followed successively by：The silicon photoelectric diode 12 is removed, the photomultiplier 13 to be measured is placed in the former pole of silicon photoelectricity two
The position of pipe 12, collimates two-beam line and in optical sensor by adjusting level crossing I6, level crossing II9 and beam splitter II10
The identical point at center is overlapping, under original state, and shutter I7 and shutter II8 are turned off, next, opening shutter I7, measures now
The output signal I of photomultiplier 13 to be measuredC, shutter II8 is then turned on, the output signal of now photomultiplier 13 to be measured is measured
IC+D, shutter I7 is turned off, the output signal I of now photomultiplier 13 to be measured is measuredD, shutter I7 is then turned on, measures and now treats
Survey the output signal I ' of photomultiplier 13D+C, shutter II8 is turned off, the output signal of now photomultiplier 13 to be measured is measured
I′C, the linearity is obtained by following formulaWherein By adjusting
H-section attenuator H I2 and attenuator II5 parameter measure the linearity under the conditions of different luminous powers, if shared n groups attenuator is joined
Number, the luminous power of the silicon photoelectric diode 12 is incided from 10 to enable-6W to 10-16Change in the range of W, k is represented
One group of condition in above-mentioned n groups, the method for the calculating linearity can eliminate by linearity measure test in attenuator production
Raw laser drift effect, finally, the linearity under the conditions of each luminous power is multiplied, the photomultiplier to be measured 13 is obtained
Output signal IC+D(k) nonlinearity
Three, are 10 in incident optical power-11Under conditions of W, respectively with the silicon photoelectric diode 12 and photoelectricity to be measured after calibration
Multiplier tube 13 measures incident light and measured in the light path II, measures the light work(of the silicon photoelectric diode 12 after calibration
Rate data and the luminous power data of photomultiplier to be measured 13 are compared, and method is followed successively by：First, by the pole of silicon photoelectricity two
Pipe 12 is placed in the light path II, and absolute incident laser power is measured using the silicon photoelectric diode 12 after calibration, secondly, is removed
Silicon photoelectric diode 12, photomultiplier 13 to be measured is placed in the position of former silicon photoelectric diode 12, and measures photomultiplier transit
Pipe for incident laser photoresponse, wherein laser irradiation position adjustment to one in the linearity measure of above-mentioned steps one
Cause, be so repeated ten times, finally, calculate incident optical power and the pole of silicon photoelectricity two that the photomultiplier 13 to be measured is measured
The ratio for the incident optical power that pipe 12 is measured, and determine the photomultiplier in incident optical power as 10 using this-11Under the conditions of W
Absolute response rate；
Four, estimate the photomultiplier 13 to be measured in incident optical power 10-16Nonlinear characteristic under the conditions of W, and tie
Responsiveness-incident optical power the curve stated and obtained in step 3 is closed, by approximating method, is estimated using this in luminous power as 10- 16Absolute light responsiveness during W；
Five, finally obtain the photomultiplier to be measured 13 10-11W to 10-16The absolute light responsiveness of W scopes.
The method of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions using non-liner revision come
The absolute light responsiveness of photomultiplier is estimated, the responsiveness of the incident light compared with broad power band, and minimum light intensity can be estimated
Close to single photon level.
Claims (1)
1. estimate the method for absolute light responsiveness of the photomultiplier under low light-intensity conditions, device mainly include laser (1),
Attenuator I (2), camera bellows (3), beam splitter I (4), attenuator II (5), level crossing I (6), shutter I (7), shutter II (8), plane
Mirror II (9), beam splitter II (10), magazine (11), silicon photoelectric diode (12), photomultiplier to be measured (13), the beam splitter I
(4), attenuator II (5), level crossing I (6), shutter I (7), shutter II (8), level crossing II (9), beam splitter II (10), magazine
(11), silicon photoelectric diode (12), photomultiplier to be measured (13) are respectively positioned in the camera bellows (3), the silicon photoelectric diode
(12), photomultiplier (13) to be measured is located in the magazine (11), and the laser (1) launches laser through attenuator I (2) extremely
Beam splitter I (4), by the laser (1), attenuator I (2), beam splitter I (4), shutter I (7), level crossing II (9), beam splitter
II (10), silicon photoelectric diode (12) composition light path I, by the laser (1), attenuator I (2), beam splitter I (4), attenuator
II (5), level crossing I (6), shutter II (8), beam splitter II (10), silicon photoelectric diode (12) composition light path II, the attenuator
I (2), attenuator II (5) and the optical axis of measuring system are respectively provided with the inclination of certain angle to avoid interference with, the pole of silicon photoelectricity two
(12) are managed in incident optical power 10-6Responsiveness under the conditions of W is, it is known that by regulated attenuator I (2) and attenuator II (5)
Parameter measures the linearity under the conditions of different luminous powers, if shared n group attenuator parameters, to incide the silicon photoelectricity
The luminous power of diode (12) can be from 10-6W to 10-16Change in the range of W,
It is characterized in that：The method and step of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions is：
One, is used as the ginseng for the absolute light power for calibrating the photomultiplier (13) to be measured using the silicon photoelectric diode (12)
According to, incident optical power be 10-6W to 10-11Non-linear, the method for the silicon photoelectric diode (12) is calibrated under conditions of W scopes
It is followed successively by：Two-beam line is collimated by adjusting level crossing I (6), level crossing II (9) and beam splitter II (10) and in optical sensor
The identical point at device center is overlapping, under original state, and shutter I (7) and shutter II (8) are turned off, next, shutter I (7) is opened,
Measure the output signal I of the now silicon photoelectric diode (12)A, shutter II (8) is then turned on, the now silicon photoelectricity two is measured
The output signal I of pole pipe (12)A+B, shutter I (7) is turned off, the output signal of the now silicon photoelectric diode (12) is measured
IB, shutter I (7) is then turned on, the output signal I ' of the now silicon photoelectric diode (12) is measuredB+A, shutter II (8) is turned off,
Measure the output signal I ' of the now silicon photoelectric diode (12)A, the linearity is obtained by following formula
WhereinK represents one group of condition in above-mentioned n groups, the method for the calculating linearity
Can eliminate by linearity measure test in attenuator produce laser drift effect, finally, under the conditions of each luminous power
The linearity is multiplied, and obtains the silicon photoelectric diode (12) output signal IA+B(k) nonlinearity
Two, are 10 in incident optical power-6W to 10-11The non-thread of the photomultiplier to be measured (13) is calibrated under conditions of W scopes
Property, method is followed successively by：The silicon photoelectric diode (12) is removed, the photomultiplier (13) to be measured is placed in former silicon photoelectricity two
The position of pole pipe (12), collimated by adjusting level crossing I (6), level crossing II (9) and beam splitter II (10) two-beam line and
The identical point at optical sensor center is overlapping, under original state, and shutter I (7) and shutter II (8) are turned off, next, opening fast
Door I (7), measures the output signal I of now photomultiplier (13) to be measuredC, shutter II (8) is then turned on, measures and now treats light-metering
The output signal I of electric multiplier tube (13)C+D, shutter I (7) is turned off, the output signal of now photomultiplier (13) to be measured is measured
ID, shutter I (7) is then turned on, the output signal I ' of now photomultiplier (13) to be measured is measuredD+C, shutter II (8) is turned off, is surveyed
Obtain the output signal I ' of now photomultiplier (13) to be measuredC, the linearity is obtained by following formulaWhereinDifference is measured by regulated attenuator I (2) and attenuator II (5) parameter
The linearity under the conditions of luminous power, if shared n group attenuator parameters, to cause the light for inciding the silicon photoelectric diode (12)
Power can be from 10-6W to 10-16Change in the range of W, k represents one group of condition in above-mentioned n groups, the side of the calculating linearity
Method can eliminate by linearity measure test in attenuator produce laser drift effect, finally, by each luminous power condition
Under the linearity be multiplied, obtain photomultiplier to be measured (13) the output signal IC+D(k) nonlinearity
Three, are 10 in incident optical power-11Under conditions of W, respectively with the silicon photoelectric diode (12) and photoelectricity to be measured times after calibration
Increase pipe (13) measurement incident light and measured in the light path II, measure the light of the silicon photoelectric diode (12) after calibration
The luminous power data of power data and photomultiplier to be measured (13) are compared, and method is followed successively by：First, by the silicon photoelectricity
Diode (12) is placed in the light path II, and absolute incident laser power is measured using the silicon photoelectric diode (12) after calibration,
Secondly, silicon photoelectric diode (12) is removed, photomultiplier to be measured (13) is placed in the position of former silicon photoelectric diode (12), and
Measure photoresponse of the photomultiplier for incident laser, wherein line of the position adjustment of laser irradiation extremely with above-mentioned steps one
Property degree measurement in it is consistent, be so repeated ten times, finally, calculate incident optical power that the photomultiplier (13) to be measured measures with
The ratio for the incident optical power that the silicon photoelectric diode (12) measures, and determine photomultiplier in incident optical power with this
For 10-11Absolute response rate under the conditions of W；
Four, estimate the photomultiplier (13) to be measured in incident optical power 10-16Nonlinear characteristic under the conditions of W, and combine
The responsiveness obtained in above-mentioned steps three-incident optical power curve, by approximating method, is estimated in luminous power as 10 using this-16W
When absolute light responsiveness；
Five, finally obtain the photomultiplier to be measured (13) 10-11W to 10-16The absolute light responsiveness of W scopes.
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Cited By (2)
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|---|---|---|---|---|
| CN107091730A (en) * | 2017-06-08 | 2017-08-25 | 金华职业技术学院 | Estimate the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions |
| CN111650490A (en) * | 2020-06-01 | 2020-09-11 | 北京遥测技术研究所 | Accelerated life test system suitable for photomultiplier |
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| 史学舜 等: "硅陷阱探测器绝对光谱响应率校准实验研究", 光学与光电技术, vol. 07, no. 05, pages 63 - 65 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107091730A (en) * | 2017-06-08 | 2017-08-25 | 金华职业技术学院 | Estimate the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions |
| CN107091730B (en) * | 2017-06-08 | 2024-04-16 | 金华职业技术学院 | Device for estimating absolute light response rate of photomultiplier |
| CN111650490A (en) * | 2020-06-01 | 2020-09-11 | 北京遥测技术研究所 | Accelerated life test system suitable for photomultiplier |
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| CN107314887B (en) | 2023-07-28 |
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