CN107091730A - Estimate the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions - Google Patents
Estimate the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions Download PDFInfo
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- CN107091730A CN107091730A CN201710451588.6A CN201710451588A CN107091730A CN 107091730 A CN107091730 A CN 107091730A CN 201710451588 A CN201710451588 A CN 201710451588A CN 107091730 A CN107091730 A CN 107091730A
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- attenuator
- beam splitter
- photomultiplier
- shutter
- photoelectric diode
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- 230000004043 responsiveness Effects 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003390 bioluminescence detection Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
Abstract
The present invention relates to field of optical measurements, estimate the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions, mainly include laser, attenuator I, camera bellows, beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing II, beam splitter II, magazine, silicon photoelectric diode, photomultiplier to be measured, the beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing II, beam splitter II, magazine, silicon photoelectric diode, photomultiplier to be measured is respectively positioned in camera bellows, the silicon photoelectric diode, photomultiplier to be measured is located in magazine, by laser, attenuator I, beam splitter I, shutter I, level crossing II, beam splitter II, silicon photoelectric diode composition light path I, by laser, attenuator I, beam splitter I, attenuator II, level crossing I, shutter II, beam splitter II, silicon photoelectric diode composition light path II, the attenuator I, attenuator II and the optical axis of measuring system are respectively provided with certain angle.
Description
Technical field
It is particularly a kind of to be rung using non-liner revision estimation photomultiplier absolute light the present invention relates to field of optical measurements
Should rate absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions device.
Background technology
The measurement of extremely low power light is played an important role in scientific research and commercial Application, and such as astronomical observation, nuclear radiation is visited
In terms of survey, bioluminescence detection and spectroscopy measurement, it is used for using photomultiplier visible to measure in photodetector
The low-power light in light region；The method of the most frequently used accurate measurement absolute light responsiveness be by the measurement result of detector to be measured with
The data of reference light source or photodetector after one calibration are contrasted.The defect of currently available technology is, to absolute light
The estimation of responsiveness and linearity measure are carried out separately, and are only for some spectral region or some is narrower
Reference optical power, by these experimental results be not enough to estimate photomultiplier measurement broad power band photoresponse rate,
The device of absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions can solve problem.
The responsiveness of one photodiode refers to the current signal and the ratio of the amount of radiation of input of its output, responsiveness
The typically function of input radiation wavelength；If the responsiveness of a photodiode does not change with the amount of input radiation,
It is called linear, the linearity is one of primary demand of optical radiation accurate measurement, especially in light measurement and actinometry
Field, in linearity measuring method, the addition method is a kind of basic method, by document【Sanders, C.L.J.Res.Natl
Bur.Stand.A 1972,76,437】And document【Sanders, C.L.Appl.Opt.1962,1,207】Understand, measure non-thread
Property degree the principle of the addition method be that the photoresponse that the light that two light sources are sent is produced in photodiode to be measured respectively is N1With
N2, the photoresponse that the summation of the light of two light sources is produced in photodiode to be measured is N12If, N1+N2=N12, then can be with
It is linear to think photodiode to be measured, if N1+N2≠N12, then nonlinearity can be by N12/(N1+N2) provide.With top
Two different light sources or a light source and two different diaphragms can be used in method.
The content of the invention
In order to solve the above problems, the present invention estimates photomultiplier absolute light responsiveness using non-liner revision, passes through
The result obtained with the optical attenuator after calibration is compared to estimation, minimum light wide in the power bracket of visible-range
Power can be close to single photon level.
The present invention proposes that the light under a kind of radiation of visible light of luminous power of estimation photomultiplier in single photon level rings
Should rate method, based on three factors：The spectral responsivity of silicon photoelectric diode after calibration；Silicon photoelectric diode after calibration
Conversion from responsiveness to photomultiplier；The non-liner revision of silicon photoelectric diode and photomultiplier.
The technical solution adopted in the present invention is：
The device of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions, mainly including laser,
Attenuator I, camera bellows, beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing II, beam splitter II, magazine, silicon
Photodiode, photomultiplier to be measured, the beam splitter I, attenuator II, level crossing I, shutter I, shutter II, level crossing II,
Beam splitter II, magazine, silicon photoelectric diode, photomultiplier to be measured are respectively positioned in the camera bellows, the silicon photoelectric diode, are treated
Photomultiplier is surveyed to be located in the magazine, laser transmitting laser through attenuator I to beam splitter I, by the laser,
Attenuator I, beam splitter I, shutter I, level crossing II, beam splitter II, silicon photoelectric diode composition light path I, by the laser, decline
Subtract device I, beam splitter I, attenuator II, level crossing I, shutter II, beam splitter II, silicon photoelectric diode composition light path II, by adjusting
H-section attenuator H I and attenuator II parameter measure the linearity under the conditions of different luminous powers, if shared n group attenuator parameters,
The luminous power of the silicon photoelectric diode is incided from 10 to enable-6W to 10-16Change in the range of W, the attenuator
I, attenuator II and measuring system optical axis are respectively provided with the inclination of certain angle to avoid interference with, and the silicon photoelectric diode is entering
Penetrate luminous power 10-6Responsiveness under the conditions of W is known.The linear survey of the photomultiplier to be measured and the silicon photoelectric diode
Amount is implemented under the conditions of 433 nanometers, 532 nanometers, 694 nanometers of lambda1-wavelength respectively.
The device step of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions is：
One, is used as the ginseng for the absolute light power for calibrating the photomultiplier to be measured using the silicon photoelectric diode
According to, incident optical power be 10-6W to 10-11The non-linear of the silicon photoelectric diode is calibrated under conditions of W scopes, method is successively
For：Two-beam line is collimated by adjusting level crossing I, level crossing II and beam splitter II and in the identical point at optical sensor center
Overlapping, under original state, shutter I and shutter II are turned off, next, opening shutter I, measure the now silicon photoelectric diode
Output signal IA, shutter II is then turned on, the output signal I of the now silicon photoelectric diode is measuredA+B, shutter I is turned off,
Measure the output signal I of the now silicon photoelectric diodeB, shutter I is then turned on, the defeated of the now silicon photoelectric diode is measured
Go out signal I 'B+A, shutter II is turned off, the output signal I ' of the now silicon photoelectric diode is measuredA, obtained linearly by following formula
DegreeWhereinPass through regulated attenuator I and attenuator
II parameter measures the linearity under the conditions of different luminous powers, if shared n group attenuator parameters, to incide the silicon
The luminous power of photodiode can be from 10-6W to 10-16Change in the range of W, k represents one group of condition in above-mentioned n groups, described
Calculate the linearity method can eliminate by linearity measure test in attenuator produce laser drift effect, finally, will
The linearity under the conditions of each luminous power is multiplied, and obtains the silicon photoelectric diode output signal IA+B(k) nonlinearity
Two, are 10 in incident optical power-6W to 10-11The non-thread of the photomultiplier to be measured is calibrated under conditions of W scopes
Property, method is followed successively by：The silicon photoelectric diode is removed, the photomultiplier to be measured is placed in the position of former silicon photoelectric diode
Put, collimate two-beam line by adjusting level crossing I, level crossing II and beam splitter II and in the identical point at optical sensor center
Overlapping, under original state, shutter I and shutter II are turned off, next, opening shutter I, measure now photomultiplier to be measured
Output signal IC, shutter II is then turned on, the output signal I of now photomultiplier to be measured is measuredC+D, shutter I is turned off, is measured
The now output signal I of photomultiplier to be measuredD, shutter I is then turned on, the output signal of now photomultiplier to be measured is measured
I′D+C, shutter II is turned off, the output signal I ' of now photomultiplier to be measured is measuredC, the linearity is obtained by following formulaWhereinPass through regulated attenuator I and attenuator II
Parameter measure the linearity under the conditions of different luminous powers, if shared n group attenuator parameters, to incide the silicon light
The luminous power of electric diode can be from 10-6W to 10-16Change in the range of W, k represents one group of condition in above-mentioned n groups, the meter
Calculate the linearity method can eliminate by linearity measure test in attenuator produce laser drift effect, finally, will be every
The linearity under the conditions of individual luminous power is multiplied, and obtains the photomultiplier output signal I to be measuredC+D(k) nonlinearity
Three, are 10 in incident optical power-11Under conditions of W, respectively with the silicon photoelectric diode and photoelectricity to be measured times after calibration
Increase pipe measurement incident light and measured in the light path II, measure the luminous power data of the silicon photoelectric diode after calibration
It is compared with the luminous power data of photomultiplier to be measured, method is followed successively by：First, the silicon photoelectric diode is placed in institute
State in light path II, absolute incident laser power is measured using the silicon photoelectric diode after calibration, secondly, remove the pole of silicon photoelectricity two
Pipe, photomultiplier to be measured is placed in the position of former silicon photoelectric diode, and measure photomultiplier for incident laser
The position adjustment of photoresponse, wherein laser irradiation in the linearity measure of above-mentioned steps one to unanimously, being so repeated ten times, most
Afterwards, the incident optical power that the incident optical power that the calculating photomultiplier to be measured is measured is measured with the silicon photoelectric diode
Ratio, and determine the photomultiplier in incident optical power as 10 using this-11Absolute response rate under the conditions of W；
Four, estimate the photomultiplier to be measured in incident optical power 10-16Nonlinear characteristic under the conditions of W, and combine
The responsiveness obtained in above-mentioned steps three-incident optical power curve, by approximating method, is estimated in luminous power as 10 using this-16W
When absolute light responsiveness；
Five, finally obtain the photomultiplier to be measured 10-11W to 10-16The absolute light responsiveness of W scopes.
The beneficial effects of the invention are as follows：
The present invention can be 10 in visible power-11W to 10-16The photoresponse rate of photomultiplier, institute are estimated in the range of W
State calculate the linearity method can eliminate by linearity measure test in attenuator produce laser drift effect, can disappear
Except a series of dependence of the attenuator transmittance to wavelength and time in linearity measures.
Brief description of the drawings
Further illustrated with reference to the figure of the present invention：
Fig. 1 is schematic diagram of the present invention.
In figure, 1. lasers, 2. attenuator I, 3. camera bellows, 4. beam splitter I, 5. attenuator II, 6. level crossing I, 7. shutters
I, 8. shutter II, 9. level crossing II, 10. beam splitter II, 11. magazines, 12. silicon photoelectric diodes, 13. photomultipliers to be measured.
Embodiment
If Fig. 1 is schematic diagram of the present invention, mainly include laser 1, attenuator I2, camera bellows 3, beam splitter I4, attenuator
II5, level crossing I6, shutter I7, shutter II8, level crossing II9, beam splitter II10, magazine 11, silicon photoelectric diode 12, treat light-metering
Electric multiplier tube 13, the beam splitter I4, attenuator II5, level crossing I6, shutter I7, shutter II8, level crossing II9, beam splitter
II10, magazine 11, silicon photoelectric diode 12, photomultiplier to be measured 13 are respectively positioned in the camera bellows 3, the silicon photoelectric diode
12nd, photomultiplier 13 to be measured is located in the magazine 11, and the laser 1 launches laser through attenuator I2 to beam splitter I4,
By the laser 1, attenuator I2, beam splitter I4, shutter I7, level crossing II9, beam splitter II10,12 groups of silicon photoelectric diode
Into light path I, by the laser 1, attenuator I2, beam splitter I4, attenuator II5, level crossing I6, shutter II8, beam splitter
II10, the composition light path II of silicon photoelectric diode 12, work(of not sharing the same light is measured by regulated attenuator I2 and attenuator II5 parameter
The linearity under the conditions of rate, if shared n group attenuator parameters, the luminous power of the silicon photoelectric diode 12 is incided to enable
It is enough from 10-6W to 10-16Change in the range of W, the optical axis of the attenuator I2, attenuator II5 and measuring system is respectively provided with necessarily
The inclination of angle is to avoid interference with, and the silicon photoelectric diode 12 is in incident optical power 10-6Responsiveness under the conditions of W is known.
The linear measurement of the photomultiplier to be measured 13 and the silicon photoelectric diode 12 is received 433 nanometers, 532 nanometers, 694 respectively
Implement under the conditions of the lambda1-wavelength of rice.
The device of the absolute light responsiveness of the estimation photomultiplier under low light-intensity conditions using non-liner revision come
The absolute light responsiveness of photomultiplier is estimated, the responsiveness of the incident light compared with broad power band, and minimum light intensity can be estimated
Close to single photon level.
Claims (2)
1. the device of absolute light responsiveness of the photomultiplier under low light-intensity conditions is estimated, mainly including laser (1), decay
Device I (2), camera bellows (3), beam splitter I (4), attenuator II (5), level crossing I (6), shutter I (7), shutter II (8), level crossing II
(9), beam splitter II (10), magazine (11), silicon photoelectric diode (12), photomultiplier to be measured (13), the beam splitter I (4),
Attenuator II (5), level crossing I (6), shutter I (7), shutter II (8), level crossing II (9), beam splitter II (10), magazine (11),
Silicon photoelectric diode (12), photomultiplier to be measured (13) are respectively positioned in the camera bellows (3), the silicon photoelectric diode (12),
Photomultiplier (13) to be measured is located in the magazine (11), and the silicon photoelectric diode (12) is in incident optical power 10-6W conditions
Under responsiveness be, it is known that it is characterized in that：The laser (1) launches laser through attenuator I (2) to beam splitter I (4), by institute
State laser (1), attenuator I (2), beam splitter I (4), shutter I (7), level crossing II (9), beam splitter II (10), silicon photoelectricity two
Pole pipe (12) constitutes light path I, by the laser (1), attenuator I (2), beam splitter I (4), attenuator II (5), level crossing I
(6), shutter II (8), beam splitter II (10), silicon photoelectric diode (12) composition light path II, by regulated attenuator I (2) and decline
Subtract device II (5) parameter to measure the linearity under the conditions of different luminous powers, if shared n group attenuator parameters, to cause incidence
Luminous power to the silicon photoelectric diode (12) can be from 10-6W to 10-16Change in the range of W, the attenuator I (2), decline
The optical axis for subtracting device II (5) and measuring system is respectively provided with the inclination of certain angle to avoid interference with.
2. the device of absolute light responsiveness of the estimation photomultiplier according to claim 1 under low light-intensity conditions, its
It is characterized in：The linear measurement of the photomultiplier to be measured (13) and the silicon photoelectric diode (12) respectively 433 nanometers,
532 nanometers, implement under the conditions of 694 nanometers of lambda1-wavelength.
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| CN201710451588.6A CN107091730B (en) | 2017-06-08 | 2017-06-08 | Device for estimating absolute light response rate of photomultiplier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710451588.6A CN107091730B (en) | 2017-06-08 | 2017-06-08 | Device for estimating absolute light response rate of photomultiplier |
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| Publication Number | Publication Date |
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| CN107091730B CN107091730B (en) | 2024-04-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111398762A (en) * | 2020-03-31 | 2020-07-10 | 北方夜视技术股份有限公司 | Photomultiplier tube linear range testing device and method |
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| CN111398762A (en) * | 2020-03-31 | 2020-07-10 | 北方夜视技术股份有限公司 | Photomultiplier tube linear range testing device and method |
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| Publication number | Publication date |
|---|---|
| CN107091730B (en) | 2024-04-16 |
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Inventor after: Liu Zhenfang Inventor after: Zhao Yongjian Inventor after: Fang Xiaohua Inventor after: Zhang Xiangping Inventor before: Zhao Yongjian Inventor before: Fang Xiaohua Inventor before: Zhang Xiangping |
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