CN107305839B - Method for preventing self-doping effect - Google Patents
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- CN107305839B CN107305839B CN201610240837.2A CN201610240837A CN107305839B CN 107305839 B CN107305839 B CN 107305839B CN 201610240837 A CN201610240837 A CN 201610240837A CN 107305839 B CN107305839 B CN 107305839B
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Abstract
The invention provides a method for preventing self-doping effect, which comprises the following steps: providing a semiconductor substrate, wherein a buried layer with doped ions is formed on the surface of part of the semiconductor substrate; forming a first sacrificial layer on the semiconductor substrate so that doped ions in the buried layer diffuse into the first sacrificial layer; removing the first sacrificial layer on the buried layer; sequentially forming a first epitaxial layer and a second sacrificial layer on the buried layer, wherein doped ions in the buried layer diffuse into the first epitaxial layer and the second sacrificial layer; etching the second sacrificial layer, the first epitaxial layer and the rest part of the first sacrificial layer, and reserving the first epitaxial layer on the buried layer; a second epitaxial layer is formed on the first epitaxial layer. The method can prevent the influence of the autodoping effect on the epitaxial process and improve the process conditions.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preventing a self-doping effect.
Background
Silicon epitaxy has wide application in bipolar devices, CMOS, silicon-based BiCMOS, silicon-germanium BiCMOS and other devices. Resistivity is one of the main characteristic parameters of an epitaxial layer and has an important influence on the performance of a semiconductor device, so that the uniformity of the resistivity of the epitaxial layer is important for the application of the epitaxial layer. The resistivity of the epitaxial layer is adjusted by doping impurities into the epitaxial layer, for example, a P-type epitaxial layer is usually doped with boron (B), an n-type epitaxial layer is usually doped with phosphorus (P) or arsenic (As), and the amount of doping impurities determines the magnitude of the resistivity.
However, there is also a self-doping phenomenon in the epitaxial process, and the Auto-doping effect (Auto-doping effect) is that an unintentional dopant (non-epitaxial dopant) is doped into the epitaxial layer during the epitaxial growth process, which has a great adverse effect on the distribution, resistivity, uniformity, and final performance of the device.
The autodoping effect is generally divided into macroscopic autodoping and microscopic autodoping, and the macroscopic autodoping is that impurities in a cavity body part such as a cavity wall are diffused into a growing epitaxial layer in the epitaxial process; the micro autodoping is an epitaxial process in which heavily doped substrate or impurities in an implanted region of the substrate are out-diffused into a flow of a transition region of growth and then doped into an epitaxial layer following the epitaxial growth, for example, as shown in fig. 1, a doped buried layer 20 is formed in a substrate 10, and during the growth of the epitaxial layer 30, dopant ions in the buried layer 20 are doped into the epitaxial layer 30.
For the macroscopic autodoping phenomenon, in order TO inhibit the autodoping effect, an intrinsic layer or a low-doped layer is generally deposited on the cavity wall after the cavity wall is cleaned by hydrogen halide (such as hydrogen chloride HCl), for the microscopic autodoping phenomenon, in order TO inhibit the autodoping effect, a heavily doped substrate is generally back-sealed by a low-temperature oxide film (L TO), but for the microscopic autodoping phenomenon, impurities in the substrate or impurities in an injection region can still diffuse outwards from the front side of the silicon wafer in the high-temperature process of epitaxial growth TO become an impurity source of the autodoping phenomenon.
Disclosure of Invention
The invention aims to provide a method for preventing the self-doping effect, which solves the problem that in the prior art, doping ions in a buried layer enter an epitaxial layer to influence the electrical performance of a device.
To solve the above technical problem, the present invention provides a method for preventing self-doping effect, comprising:
providing a semiconductor substrate, wherein a buried layer with doped ions is formed on the surface of part of the semiconductor substrate;
forming a first sacrificial layer on the semiconductor substrate so that doped ions in the buried layer diffuse into the first sacrificial layer;
removing the first sacrificial layer on the buried layer;
sequentially forming a first epitaxial layer and a second sacrificial layer on the buried layer, wherein doped ions in the buried layer diffuse into the first epitaxial layer and the second sacrificial layer;
etching the second sacrificial layer, the first epitaxial layer and the rest part of the first sacrificial layer, and reserving the first epitaxial layer on the buried layer;
a second epitaxial layer is formed on the first epitaxial layer.
Optionally, a patterned photoresist is formed on the semiconductor substrate, and ion implantation is performed on a part of the surface of the semiconductor substrate by using the patterned photoresist as a mask to form the buried layer.
Optionally, the ions implanted in the buried layer are arsenic or antimony, and the ion implantation concentration is 1 × 1015/cm3～1×1020/cm3。
Optionally, the energy of the ion implantation is 60KeV to 130KeV, and the depth of the ion implantation is 50nm to 100 nm.
Optionally, the first sacrificial layer is one or a combination of several of silicon oxide, silicon nitride, and silicon oxynitride.
Optionally, the first sacrificial layer is grown by a chemical vapor deposition process, and the temperature for performing the chemical vapor deposition process is 200 ℃ to 500 ℃.
Optionally, the thickness of the first sacrificial layer is 50nm to 100 nm.
Optionally, the thickness of the first epitaxial layer is 20nm to 50 nm.
Optionally, the second sacrificial layer is one or a combination of several of silicon oxide, silicon nitride, and silicon oxynitride.
Optionally, the second sacrificial layer is grown by a chemical vapor deposition process, and the temperature for performing the chemical vapor deposition process is 200 ℃ to 500 ℃.
Optionally, the thickness of the second sacrificial layer is 30nm to 50 nm.
Optionally, the thickness of the second epitaxial layer is 200nm to 500 nm.
Optionally, when the first sacrificial layer on the buried layer is removed, only the first sacrificial layer on the buried layer is removed, and the first sacrificial layer on the semiconductor substrate except for the buried layer is remained.
Optionally, the cavity used for growing the second epitaxial layer is different from the cavities used for growing the first epitaxial layer and the second sacrificial layer.
Compared with the prior art, in the method for preventing the self-doping effect, the first sacrificial layer is formed on the surface of the semiconductor substrate, and the doping ions in the buried layer can be diffused into the first sacrificial layer, so that the doping ions on the surface of the buried layer are consumed. And then, removing the first sacrificial layer, and depositing the first epitaxial layer and the second sacrificial layer, wherein the second sacrificial layer can also consume the doping ions diffused in the buried layer and the first epitaxial layer. And finally, removing the second sacrificial layer, forming a second epitaxial layer on the first epitaxial layer, wherein the finally formed second epitaxial layer is hardly influenced by doping ions and has no self-doping effect, so that the performance of the device is improved.
Drawings
Fig. 1 is a schematic structural diagram of forming an epitaxial layer on a buried layer in the prior art;
FIG. 2 is a flowchart illustrating a method for preventing auto-doping effects according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of forming a buried layer according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a first sacrificial layer according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram illustrating a process of removing a portion of a first sacrificial layer according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first epitaxial layer according to an embodiment of the invention;
FIG. 7 is a schematic structural diagram of a second sacrificial layer according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram illustrating the removal of the second sacrificial layer according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a second epitaxial layer in accordance with an embodiment of the present invention.
Detailed Description
The method of preventing autodoping effects of the present invention will be described in more detail below with reference to schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art may modify the invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core idea of the invention is that when the buried layer is formed, the energy and depth of ion implantation are increased to make the ion concentration on the surface of the buried layer lower, then a first sacrificial layer is formed on the surface of the semiconductor substrate, and the doped ions in the buried layer can diffuse into the first sacrificial layer, thereby consuming the doped ions on the surface of the buried layer. And then, removing the first sacrificial layer, and depositing the first epitaxial layer and the second sacrificial layer, wherein the second sacrificial layer can also consume the doping ions diffused in the buried layer and the first epitaxial layer. And finally, removing the second sacrificial layer, forming a second epitaxial layer on the first epitaxial layer, wherein the finally formed second epitaxial layer is hardly influenced by doping ions and has no self-doping effect, so that the performance of the device is improved.
The method for preventing the autodoping effect of the present invention is described in detail below with reference to the accompanying drawings, fig. 2 is a flow chart of the method for preventing the autodoping effect, and fig. 2 to 8 are schematic structural diagrams corresponding to the steps.
First, step S1 is performed, and referring to fig. 3, a semiconductor substrate 100 is provided, and a buried layer 110 is formed on a portion of the surface of the semiconductor substrate 100. In this embodiment, a patterned photoresist 120 is formed on the semiconductor substrate 100, and ion implantation is performed on the surface of the semiconductor substrate 100 using the patterned photoresist 120 as a mask to form the buried layer 110. Wherein, when ion implantation is performed on a part of the surface of the semiconductor substrate 100, the ion implantation concentration is 10, and the ion implantation is arsenic (As) or antimony (Sb)15/cm3～1020/cm3The energy of the ion implantation is 60KeV to 130KeV, and the depth of the ion implantation is 50nm to 100nm under the energy of the ion implantation, and it should be noted that, in the present invention, the implantation energy of the ion implantation is increased, so that the depth of the ion implantation is increased, thereby the ion concentration on the surface of the buried layer 110 is lower, and the autodoping effect in the subsequent epitaxial process is weakened.
Step S2 is executed, and referring to fig. 4, a first sacrificial layer 130 is formed on the semiconductor substrate 100, where the first sacrificial layer 130 is one or a combination of silicon oxide, or silicon oxynitride, and the thickness of the first sacrificial layer 130 is 30nm to 50nm, for example, 40 nm. It should be noted that the thickness of the first sacrificial layer 130 is related to the implantation concentration and implantation energy of the buried layer 110, and is used for consuming a portion of the dopant ions with increased implantation depth. In this embodiment, the first sacrificial layer 130 is grown by a chemical vapor deposition process, and the temperature for performing the chemical vapor deposition process is 200 ℃ to 500 ℃. It is understood that the dopant ions in the buried layer 110 diffuse into the first sacrificial layer 130, so that the first sacrificial layer 110 consumes a portion of the dopant ions at the surface of the buried layer 110. Also, the patterned photoresist 120 is melted away by the high temperature in the chamber and thus removed when the first sacrificial layer 130 is formed, and a separate process step of removing the patterned photoresist 120 is not necessary.
Step S3 is performed, and referring to fig. 5, the first sacrificial layer 130 on the buried layer 110 is removed, and the first sacrificial layer 130 on the semiconductor substrate 100 except the buried layer 110 remains, which is used as a mask layer of the first epitaxial layer in step S4. It should be noted that, by leaving the first sacrificial layer 130 not covering the buried layer 110, the first sacrificial layer can isolate the first epitaxial layer from the semiconductor substrate 100, thereby preventing the dopant ions entering the first epitaxial layer from entering the semiconductor substrate 100 where the buried layer is not formed again. In this embodiment, another patterned photoresist (not shown) is formed on the first sacrificial layer 130, and then the first sacrificial layer 130 is removed by using the another patterned photoresist as a mask, and a dry etching process or other methods known to those skilled in the art may be used.
Step S4 is executed, referring to fig. 6, a first epitaxial layer 140 is formed on the buried layer 110 and the remaining first sacrificial layer 130, the thickness of the first epitaxial layer 140 is 20nm to 50nm, such as 30nm, 40nm, and the like, when the first epitaxial layer 140 is deposited, the dopant ions in the buried layer 110 are doped into the first epitaxial layer 140, however, compared to the prior art in which an epitaxial layer is directly formed on a buried layer, in the present invention, the concentration of the dopant ions in the first epitaxial layer 140 is greatly reduced, so as to reduce the influence of the self-doping effect on the epitaxial process. Similarly, during deposition of the first epitaxial layer 140, the other patterned photoresist melts away due to the high temperature in the chamber, thereby removing the other patterned photoresist. Since the first sacrificial layer 130 on the buried layer 110 is removed and the first sacrificial layer 130 on the semiconductor substrate 100 other than the buried layer 110 remains in step S3, the first sacrificial layer 130 and the first epitaxial layer 140 are sequentially stacked on the semiconductor substrate 100 other than the buried layer 110.
Next, referring to fig. 7, a second sacrificial layer 150 is formed on the first epitaxial layer 140, in this embodiment, the second sacrificial layer 150 is one or a combination of silicon oxide, silicon nitride, or silicon oxynitride, and the thickness of the second sacrificial layer 150 is 30nm to 50nm, for example, 40 nm. The second sacrificial layer 150 is grown by a chemical vapor deposition process at a temperature of 200-500 ℃. In the deposition process of the second sacrificial layer 150, the doped ions in the buried layer 110 and the first epitaxial layer 140 diffuse into the second sacrificial layer 150, so that the ion concentrations in the first epitaxial layer 140 and the buried layer 110 are reduced, and the subsequent external delay is performed on the first epitaxial layer 140 to avoid the self-doping effect. Since the first sacrificial layer 130 on the buried layer 110 is removed and the first sacrificial layer 130 on the semiconductor substrate 100 except the buried layer 110 remains in step S3, the first sacrificial layer 130, the first epitaxial layer 140, and the second sacrificial layer 150 are sequentially stacked on the semiconductor substrate 100 except the buried layer 110.
Step S5 is executed, and referring to fig. 8, the second sacrificial layer 150, the first epitaxial layer 140, and the first sacrificial layer 130 are etched, and the first epitaxial layer 140 on the buried layer 110 remains. In this embodiment, the second sacrificial layer 150, the first epitaxial layer 140 and the remaining first sacrificial layer 130 may be removed by dry etching or wet etching. Preferably, the wet etching process is used, for example, hydrofluoric acid solution or phosphoric acid solution may be used for removing, and when the second sacrificial layer 150 and the first sacrificial layer 130 are removed, the first epitaxial layer 140 is peeled off, so that the process is simple, and the processes such as photolithography and plasma etching during the dry etching process are avoided.
Step S6 is performed, and referring to fig. 9, a second epitaxial layer 160 is formed on the first epitaxial layer 140. The thickness of the second epitaxial layer 160 is 200nm to 500 nm. It can be understood that, since the first sacrificial layer 130, the first epitaxial layer 140 and the second sacrificial layer 150 consume the dopant ions overflowing from the buried layer 110, the influence of the self-doping effect in the second epitaxial layer 160 is small during the deposition of the second epitaxial layer 160, and thus there is substantially no dopant ions in the second epitaxial layer 160, and therefore, by using the process of the present invention, the self-doping effect caused by the dopant ions in the buried layer can be avoided, and the influence of the microscopic self-doping effect can be solved.
In addition, in the present invention, since the epitaxial process and the chemical vapor deposition process are performed in different cavities, in order to prevent the self-doping phenomenon caused by the cavities, the second doping layer 160 is grown without using the cavities for growing the first doping layer 140 and the second sacrificial layer 150, and a new epitaxial cavity needs to be replaced, so that the second doping layer 160 is grown in the cavity in which the self-doping effect has not occurred, and the second doping layer 160 is not affected by the self-doping effect of the cavity, thereby avoiding the macroscopic self-doping effect.
In summary, in the method for preventing the self-doping effect provided by the present invention, the first sacrificial layer is formed on the surface of the semiconductor substrate, and the doping ions in the buried layer can diffuse into the first sacrificial layer, so as to consume the doping ions on the surface of the buried layer. And then, removing the first sacrificial layer, and depositing the first epitaxial layer and the second sacrificial layer, wherein the second sacrificial layer can also consume the doping ions diffused in the buried layer and the first epitaxial layer. And finally, removing the second sacrificial layer, forming a second epitaxial layer on the first epitaxial layer, wherein the finally formed second epitaxial layer is hardly influenced by doping ions and has no self-doping effect, so that the performance of the device is improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method for preventing autodoping effects, comprising:
providing a semiconductor substrate, wherein a buried layer with doped ions is formed on the surface of part of the semiconductor substrate;
forming a first sacrificial layer on the semiconductor substrate, wherein the first sacrificial layer grows by adopting a chemical vapor deposition process so as to diffuse doping ions in the buried layer into the first sacrificial layer;
removing the first sacrificial layer on the buried layer, wherein only the first sacrificial layer right above the buried layer is removed, and the first sacrificial layer on the semiconductor substrate except the buried layer is remained;
forming a first epitaxial layer and a second sacrificial layer on the buried layer in sequence, wherein the second sacrificial layer grows by adopting a chemical vapor deposition process, the second sacrificial layer is one or a combination of more of silicon oxide, silicon nitride and silicon oxynitride, and doped ions in the buried layer diffuse into the first epitaxial layer and the second sacrificial layer;
etching the second sacrificial layer, the first epitaxial layer and the rest part of the first sacrificial layer, and reserving the first epitaxial layer on the buried layer;
a second epitaxial layer is formed on the first epitaxial layer.
2. The method for preventing the self-doping effect as claimed in claim 1, wherein a patterned photoresist is formed on the semiconductor substrate, and ion implantation is performed on a portion of the surface of the semiconductor substrate using the patterned photoresist as a mask to form the buried layer.
3. The method of claim 2, wherein the ions implanted into the buried layer are arsenic or antimony, and the concentration of the implanted ions is 1 × 1015/cm3～1×1020/cm3。
4. The method of claim 2, wherein the energy of the ion implantation is 60 KeV-130 KeV and the depth of the ion implantation is 50 nm-100 nm.
5. The method according to claim 1, wherein the first sacrificial layer is one or more of silicon oxide, silicon nitride, and silicon oxynitride.
6. The method of claim 5, wherein the first sacrificial layer has a thickness of 50nm to 100 nm.
7. The method of claim 1, wherein the first epitaxial layer has a thickness of 20nm to 50 nm.
8. The method of claim 1, wherein the second sacrificial layer has a thickness of 30nm to 50 nm.
9. The method of preventing autodoping effects of claim 1 wherein the thickness of the second epitaxial layer is from 200nm to 500 nm.
10. The method of claim 1, wherein a different cavity is used for growing the second epitaxial layer than for growing the first epitaxial layer and the second sacrificial layer.
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