CN107299318B - A kind of metal mask preparation method of resistance to BOE corrosion - Google Patents
A kind of metal mask preparation method of resistance to BOE corrosion Download PDFInfo
- Publication number
- CN107299318B CN107299318B CN201710399984.9A CN201710399984A CN107299318B CN 107299318 B CN107299318 B CN 107299318B CN 201710399984 A CN201710399984 A CN 201710399984A CN 107299318 B CN107299318 B CN 107299318B
- Authority
- CN
- China
- Prior art keywords
- resistance
- film
- boe
- metal mask
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/251—Al, Cu, Mg or noble metals
- C03C2217/254—Noble metals
- C03C2217/255—Au
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/257—Refractory metals
- C03C2217/26—Cr, Mo, W
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of metal mask preparation methods of resistance to BOE corrosion, and the preparation method of the metal mask layer of resistance to BOE corrosion is especially coated on quartz crystal.The present invention specifically includes cleaning step and plating steps.Remarkable result of the invention is: 1. realizing and carries out the etching process of resistance to BOE with single layer Cr/Au mask layer；2. the problems such as there is surface undercutting, bulge after solving existing Cr/Au mask layer corrosion, or even falling off；3. single layer Cr/Au mask layer shifts litho pattern precision height, can control within 1um；4. preparation process is simple, easily controllable, preparation cost is cheap, suitable for mass production.
Description
Technical field
The invention belongs to the preparation methods of metal mask, and the metal that resistance to BOE corrosion is especially coated on quartz crystal is covered
The preparation method of film layer.
Background technique
Quartz crystal is a kind of extraordinary piezoelectric material of vibration frequency stability, is frequently used for preparing quartzy sound in inertia field
The sensitive structures such as fork.The processing of quartz crystal structure mainly uses BOE wet corrosion technique, specifically include quartz crystal cleaning,
Metal mask preparation, photoetching and BOE corrosion and etc..BOE corrosion needs for plated film quartz crystal to be placed in corrosive liquid for a long time
It impregnates, therefore the resistance to BOE corrosivity of metal mask is the key point of shaping structures.The metal of currently used resistance to BOE corrosion
The method that exposure mask mainly passes through plating multilayer film production, this method have the disadvantage that
(1) preparation process of multilayer film is complicated, and operating process is very easy to pollute sample, and it is attached to influence film layer
Put forth effort；
(2) due to subsequent plating membrane sample need to carry out photoetching process realize structure graph shift, corrosion multiple layer metal
During film, side undercut necessarily leads to pattern line loss of significance；
(3) preparation of multilayer film needs to carry out multiple coating process process, and low efficiency is at high cost, is not suitable for batch production.
Summary of the invention
The purpose of the present invention: being that in view of the deficiencies of the prior art, it is simple to provide a kind of technical process, lower-cost resistance to
The preparation method of the single-layer metal film of BOE corrosion.
The technical scheme adopted by the invention is that:
A kind of metal mask preparation method of resistance to BOE corrosion, steps are as follows:
Step a: object to be coated is cleaned；
Step b；Coating film treatment is carried out to the object after cleaning；
When carrying out coating film treatment, using single layer Cr/Au exposure mask.
The step a specifically: object is placed in the concentrated sulfuric acid and hydrogen peroxide mixing cleaning solution and is impregnated.
The mixing cleaning solution temperature is 80~130 DEG C, 15~30min of soaking time.
The step b carries out coating film treatment to the object after cleaning, specifically comprises the following steps:
(1) object after cleaning is put into sputtering coating equipment, carries out vacuumize process；
(2) Cr film is plated by the way of magnetron sputtering；
(3) Au film is plated by the way of magnetron sputtering；
(4) natural cooling is carried out to the object after plated film.
Step (1) vacuumize process is specially to be evacuated to 5E-7Torr or less.
When the step (2) plates Cr film by the way of magnetron sputtering, sputter gas N2With the gaseous mixture of Ar, gas is sputtered
Pressure is 5~10mTorr, and coating temperature is 100~350 DEG C, and sputtering power is 100~300W.
When the step (3) plates Au film by the way of magnetron sputtering, sputter gas Ar, sputtering pressure be 5~
10mTorr, coating temperature are 100~350 DEG C, and sputtering power is 100~300W.
N2With N in the gaseous mixture of Ar2Shared volume ratio is 40%~60%.
The object is quartz crystal, quartz glass or monocrystalline silicon.
Bring has the beneficial effect that the present invention compared with prior art
(1) in cleaning step, by the heating concentrated sulfuric acid and hydrogen peroxide mixing cleaning solution, sample surfaces powder can be effectively removed
Dirt, particulate matter and organic pollutant improve the adhesive force of subsequent metal exposure mask；
(2) present invention is passed through a certain proportion of N using when plating Cr film2Preparing monofilm realizes the resistance to BOE of metal mask
Etching characteristic, relative to it is currently used using multilayer film process for plating realize the metal mask etching characteristic of resistance to BOE method,
Guarantee to simplify process flow while performance, reduce costs；
(3) due to subsequent plating membrane sample need to carry out photoetching process realize structure graph shift, corrode single-layer metal film
Obtained pattern line precision is high, can control within 1um, is conducive to improve the sample structure precision after BOE corrosion；
(4) pass through the natural cooling step after coating process, it is possible to reduce in technical process due to caused by heating
Plate membrane stress.
Detailed description of the invention
Fig. 1 is the process flow chart of the method for the present invention.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples:
In BOE wet corrosion technique, it will usually serve as exposure mask using Cr/Au metal film is coated in target surface
Layer.BOE is HF and NH4The mixed solution that F is prepared with certain proportion has stronger corrosivity, the single layer that conventional method is coated with
The corrosion resistance of Cr/Au mask layer is unable to satisfy the requirement of BOE wet corrosion technique, and general use is coated with multi-layer C r/Au at present
Metal film improves the resistance to BOE corrosivity of mask layer.The present invention is made by being passed through a certain proportion of nitrogen in plating Cr film step
The corrosion resistance for obtaining be coated with single layer Cr/Au mask layer meets the requirement of BOE wet corrosion technique.
As shown in Figure 1, steps are as follows the invention proposes a kind of metal mask preparation method of resistance to BOE corrosion:
Step a: object to be coated is cleaned；
Specifically: object is placed in the concentrated sulfuric acid and hydrogen peroxide mixing cleaning solution and is impregnated.Mixing cleaning solution temperature is 80
~130 DEG C, 15~30min of soaking time.The concentrated sulfuric acid and hydrogen peroxide mixing can generate a large amount of bubble (O2) and discharge heat, bubble
The dust and particle deposition of target surface can be taken away, the concentrated sulfuric acid can erode organic pollutant, and heating is conducive to target
Object thoroughly cleans up.
Step b；Coating film treatment is carried out to the object after cleaning；
Main innovation of the invention concentrates on: when carrying out coating film treatment, using single layer Cr/Au exposure mask.It is more with current technology
Layer Cr/Au exposure mask is compared, and the advantage of the single layer wet etching of resistance to BOE Cr/Au exposure mask is huge, specifically includes that 1. process flows are simple,
It only needs to carry out a Cr/Au exposure mask coating operation, greatly saves the process time；2. process costs are cheap, the technique of monofilm at
The half of this only multilayer film is even lower；3. it is high that subsequent diagram shifts precision, it is ensured that pattern line precision 1um with
It is interior, and multilayer film is extremely difficult to same precision；4. exposure mask ply stress is small, monofilm can be reduced preferably by different metal material
Expect coefficient of thermal expansion difference bring mask layer stress value.
Coating film treatment specifically comprises the following steps:
(1) object after cleaning is put into sputtering coating equipment, carries out vacuumize process；Vacuumize process is specific
To be evacuated to 5E-7Torr hereinafter, sputtering coating equipment is equipment generally in the art, it is also possible to which thermal evaporation filming equipment carries out
Plated film, does not limit manufacturer, model of filming equipment etc., and sputter coating principle is general knowledge known in this field；
(2) Cr film is plated by the way of magnetron sputtering；Filming parameter is as follows: sputter gas N2With the gaseous mixture of Ar, splash
Pressure of emanating is 5~10mTorr, and coating temperature is 100~350 DEG C, and sputtering power is 100~300W.N2With N in the gaseous mixture of Ar2
Shared volume ratio is 40%~60%.
(3) Au film is plated by the way of magnetron sputtering；Filming parameter is as follows: sputter gas Ar, sputtering pressure be 5~
10mTorr, coating temperature are 100~350 DEG C, and sputtering power is 100~300W；
(4) natural cooling is carried out to the object after plated film.
Present invention is described using quartz crystal substrate as object to be coated for following embodiments.
Embodiment one:
Cleaning: step a quartz crystal substrate is put into H2O2: dense H2SO4The ratio of=1:3 is prepared in cleaning solution, is added
Heat impregnates 20~30min to 110 DEG C, and taking-up is cleaned with warm water.
Step b, plated film: 1. the quartz crystal substrate by cleaning drying is put into sputter coating machine, is evacuated to 3E-
7Torr；2. heated quartz crystal substrates are to 320 DEG C or so；3. flowing into Ar and N2, change N2Shared volume ratio carries out A, B, C, D, E
Totally 5 groups of comparative tests, the N of A, B, C, D, E2Shared volume ratio is respectively 20%, 40%, 50%, 60% and 80%, keeps sputtering
Chamber air pressure is 5mTorr, sputtering power 150W, and the Cr film for completing 30nm thickness is coated with；4. flowing into Ar, holding sputtering chamber air pressure is
10mTorr sets sputtering power as 200W, and the Au film for completing 200nm thickness is coated with；5. cooled to room temperature takes out plated film stone
English crystal substrates.
The quartz crystal substrate for being coated with single layer Cr/Au exposure mask obtained in A, B, C, D, E test, which is placed in temperature, respectively is
60~80 DEG C of BOE (40%HF solution: 40%NH4F solution=1:1) in corrosive liquid, impregnate 30 hours.Corrosion results are carried out
It analyzes, the quartz crystal substrate surface single layer Cr/Au exposure mask in B, C, D test is intact, and resistance to BOE corrosivity is very good；A and
There is bulge in quartz crystal substrate surface single layer Cr/Au exposure mask in E test, and a small amount of undercutting hole occurs, is unable to satisfy mask layer
The resistance to corrosive demand of BOE.
Embodiment two:
Cleaning: step a quartz crystal substrate is put into H2O2: dense H2SO4The ratio of=1:5 is prepared in cleaning solution, is added
Heat impregnates 15~25min to 130 DEG C, and taking-up is cleaned with warm water.
Step b, plated film: 1. the quartz crystal substrate by cleaning drying is put into sputter coating machine, is evacuated to setting value
1E-7Torr；2. heated quartz crystal substrates are to 240 DEG C or so；3. flowing into Ar and N2, N2Shared volume ratio 55% keeps sputtering
Chamber air pressure is 10mTorr, sputtering power 150W, and the Cr film for completing 20nm thickness is coated with；4. flowing into Ar, holding sputtering chamber air pressure is
10mTorr sets sputtering power as 200W, and the Au film for completing 300nm thickness is coated with；5. cooled to room temperature takes out plated film stone
English crystal substrates.
The quartz crystal substrate for being coated with single layer Cr/Au exposure mask of acquisition is placed in the BOE (40%HF that temperature is 40~60 DEG C
Solution: 40%NH4F solution=1:2) in corrosive liquid, impregnate 20 hours.Corrosion results are analyzed, quartz crystal substrate table
Face single layer Cr/Au exposure mask is intact, and resistance to BOE corrosivity is very good.
BOE (the 40%HF solution: 40% that the single layer Cr/Au metal mask of the method for the present invention preparation is 60 DEG C in temperature
NH4F solution=1:1) it impregnates 35 hours in corrosive liquid, it completes to form with a thickness of the quartz crystal structure of 300um.
The content that description in the present invention is not described in detail belongs to the well-known technique of those skilled in the art.
Claims (5)
1. a kind of metal mask preparation method of resistance to BOE corrosion, steps are as follows:
Step a: object to be coated is cleaned；
Step b；Coating film treatment is carried out to the object after cleaning；
It is characterized by: when carrying out coating film treatment, using single layer Cr/Au exposure mask；
The step a specifically: object is placed in the concentrated sulfuric acid and hydrogen peroxide mixing cleaning solution and is impregnated；
The mixing cleaning solution temperature is 110 DEG C~130 DEG C, 15~30min of soaking time；
Step b specifically comprises the following steps:
(1) object after cleaning is put into sputtering coating equipment, carries out vacuumize process；
(2) Cr film is plated by the way of magnetron sputtering；Sputter gas is N2With the gaseous mixture of Ar, N2With N in the gaseous mixture of Ar2Institute
Accounting for volume ratio is 40%~60%；
(3) Au film is plated by the way of magnetron sputtering；
(4) natural cooling is carried out to the object after plated film.
2. a kind of metal mask preparation method of resistance to BOE corrosion as described in claim 1, it is characterised in that: the step (1)
Vacuumize process is specially to be evacuated to 5E-7Torr or less.
3. a kind of metal mask preparation method of resistance to BOE corrosion as described in claim 1, it is characterised in that: the step (2)
When plating Cr film by the way of magnetron sputtering, sputtering pressure is 5~10mTorr, and coating temperature is 100~350 DEG C, sputtering power
For 100~300W.
4. a kind of metal mask preparation method of resistance to BOE corrosion as described in claim 1, it is characterised in that: the step (3)
When plating Au film by the way of magnetron sputtering, sputter gas Ar, sputtering pressure be 5~10mTorr, coating temperature be 100~
350 DEG C, sputtering power is 100~300W.
5. a kind of metal mask preparation method of resistance to BOE corrosion as described in any one of claims 1 to 4, it is characterised in that:
The object is quartz crystal, quartz glass or monocrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710399984.9A CN107299318B (en) | 2017-05-31 | 2017-05-31 | A kind of metal mask preparation method of resistance to BOE corrosion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710399984.9A CN107299318B (en) | 2017-05-31 | 2017-05-31 | A kind of metal mask preparation method of resistance to BOE corrosion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107299318A CN107299318A (en) | 2017-10-27 |
| CN107299318B true CN107299318B (en) | 2019-07-12 |
Family
ID=60137611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710399984.9A Active CN107299318B (en) | 2017-05-31 | 2017-05-31 | A kind of metal mask preparation method of resistance to BOE corrosion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107299318B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429158A (en) * | 2019-07-04 | 2019-11-08 | 云南师范大学 | The wet etching method of non-refrigerated infrared focal plane probe optical window |
| CN111232915B (en) * | 2020-01-20 | 2023-10-10 | 北京晨晶电子有限公司 | Multi-layer mask layer structure, preparation method thereof and MEMS device |
| CN111498797A (en) * | 2020-03-31 | 2020-08-07 | 北京航天控制仪器研究所 | Manufacturing method of wafer-level glass cavity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529343A (en) * | 2003-10-13 | 2004-09-15 | 华中科技大学 | Gold-tin-eutectic-based silicon/silicon bonding method |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
| CN105460887A (en) * | 2015-12-17 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of graphical porous silicon |
-
2017
- 2017-05-31 CN CN201710399984.9A patent/CN107299318B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529343A (en) * | 2003-10-13 | 2004-09-15 | 华中科技大学 | Gold-tin-eutectic-based silicon/silicon bonding method |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
| CN105460887A (en) * | 2015-12-17 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of graphical porous silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107299318A (en) | 2017-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107299318B (en) | A kind of metal mask preparation method of resistance to BOE corrosion | |
| CN107227444A (en) | The preparation method and anti-fingerprint protective film coated article of anti-fingerprint protective film plated film | |
| CN104805405B (en) | Aluminium nitride piezoelectric film and preparation method thereof | |
| CN104803372A (en) | Graphene film, and making method and use thereof | |
| CN103787585B (en) | The method of depositing diamond film on quartz substrate | |
| CN103887285B (en) | Method for manufacturing anti-static TFT substrate | |
| CN105154850B (en) | A kind of carbon fluoride film and its preparation method and application | |
| CN102010135B (en) | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid | |
| CN104241096A (en) | Ion beam dry etching method for 4-micron NiCr alloy film | |
| CN103715070A (en) | Method for adhesive magnetron sputtering thick film | |
| CN100570828C (en) | The method of etching aluminium nitride thin film micrographics | |
| CN107400876B (en) | A method of nano-diamond membrane is graphically made using copper film | |
| CN102998721B (en) | Method for coating diffusion film coating | |
| CN105603393A (en) | Magnesium alloy provided with graphene protection film and preparation method thereof | |
| CN108111142A (en) | A kind of SAW device based on silicon carbide substrates/zinc oxide or doping zinc-oxide film and preparation method thereof | |
| CN102277573B (en) | Chromium etchant for liquid crystal display screens and preparation method thereof | |
| CN106048528A (en) | Method and device for membrane electrode manufacturing process | |
| CN106917088A (en) | A kind of technique of the ScAlN films for preparing height C axis oriented | |
| JP2003051485A (en) | Coating silicon electrode plate for plasma etching | |
| CN109913825A (en) | A kind of PVD composite membrane layer preparation process of high vibration wear-resisting property | |
| CN101660122B (en) | Quartz film | |
| CN103311104A (en) | Method for manufacturing graphene | |
| CN205231118U (en) | Piezoceramics device electrode structure with strong adhesive force | |
| Liu et al. | Effect of Sputtering Power on Nano-mechanical Properties of SiCO Film | |
| CN109957772A (en) | A kind of palladium/ceramic composite film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |