CN110429158A - The wet etching method of non-refrigerated infrared focal plane probe optical window - Google Patents
The wet etching method of non-refrigerated infrared focal plane probe optical window Download PDFInfo
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- CN110429158A CN110429158A CN201910600516.2A CN201910600516A CN110429158A CN 110429158 A CN110429158 A CN 110429158A CN 201910600516 A CN201910600516 A CN 201910600516A CN 110429158 A CN110429158 A CN 110429158A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000001039 wet etching Methods 0.000 title claims abstract description 26
- 239000000523 sample Substances 0.000 title claims abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 136
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000007797 corrosion Effects 0.000 claims abstract description 25
- 238000005260 corrosion Methods 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000011651 chromium Substances 0.000 abstract description 5
- 229910052804 chromium Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
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- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 241001083492 Trapa Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0875—Windows; Arrangements for fastening thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of wet etching methods of non-refrigerated infrared focal plane probe optical window, comprising: grows silica dioxide medium layer on silicon chip substrate two sides with plasma chemical vapor deposition；Chromium is sequentially depositing on dielectric layer using DC magnetron sputtering method, gold forms metal layer；The photoresist layer of a figure is formed on substrate the first bottom-side metal layer by photoetching process；Using the metal layer of the first bottom surface of outer-lining bottom of ion beam etching method etching photoresist exposure mask；Corrode the silicon dioxide layer of the first bottom surface of outer-lining bottom of photoresist exposure mask;Remove photoresist layer；Using remaining dielectric layer and metal layer as exposure mask protective layer, corrosion of silicon forms the optical window cavity that corrosion depth is greater than 100 μm；And removal exposure mask protective layer, obtain patterned optical window.The present invention is by under the premise of not increasing cost, not changing wet etching liquid, having achieved the purpose that selective wet etching optical window using dielectric layer and metal layer as exposure mask protective layer.
Description
Technical field
The present invention relates to a kind of encapsulation of infrared detector and micro-electronic machining field more particularly to non-refrigerating infrared focal planes
Use silica dioxide medium layer and chromium gold metal layer for exposure mask protective layer wet etching optics in detector wafer-level packaging technique
The method of window.
Background technique
Infrared detector is the core component of thermal imaging system, it is the pass of detection, identification and object analysis infrared information
Key.It is had a wide range of applications in military affairs, industry, transport, security monitoring, meteorology and other industry.Mainstream currently on the market
Infrared detector mainly uses Metal Packaging and ceramic package.But infrared sensor is to the more demanding of encapsulation, one side
Have very high requirement to vacuum, vacuum degree is not above 5pa under normal conditions, on the other hand to the transmitance of infrared ray require compared with
It is high.Requirement in terms of the two causes the existing performances of IR using Metal Packaging and ceramic package unstable, and
And the quality weight of entirety, volume are big, at high cost, are unfavorable for the market application of product and promote, it is difficult to meet the requirements.
Royal Swedish Academy of Sciences KTH and therewith the CEA-LETI research with the SensoNor company of cooperation, France at present
Center and ULIS company, Ray theon .Honeywell in the U.S., DRS, Canadian INO TECHNOLOGIES, Japan three
The main un-cooled infrared focal plane array product in the worlds such as KoreaNational NanoFab Center of water chestnut and South Korea
Manufacture commercial city or using wafer stage chip Vacuum Package, and have the product appearance using the technology.The country also has
A small amount of unit has relevant report, but due to the skill of wafer-level packaging solution, bonding techniques, vacuum measurement etc.
The production of art gap, especially optical window, domestic research level are big with international mainstream company at present also in predevelopment phase
Batch production level has very big gap.
For the gap of rapid drop and developed countries, the horizontal and big of domestic uncooled fpa detector is improved
Amplitude reduction production cost expands the application field of uncooled fpa detector, carries out non-refrigeration focal surface wafer-level packaging
It is extremely urgent.The research and development of whole wafer grade encapsulation are carried out the work mainly around optical window corrosion.
Currently, the corrosion of optical window generallys use the large area wet etching of non-selectivity, this method is difficult to meet
The requirement of non-refrigerated infrared focal plane probe wafer-level packaging.In addition, photoresist is as in the wet etching of exposure mask, organically
The photoresist liquid oxidation demoulding that can be corroded does not have the effect of exposure mask finally.
Summary of the invention
To overcome defect existing for existing optical window wet etching, the main purpose of the present invention is to provide a kind of new
Optical window caustic solution, can be by the graphic mask layer of silica dioxide medium layer and chromium gold metal layer, not
Under the premise of changing wet etching liquid, fast deep corrosion of silicon is obtained, thus the optical window met the requirements.
The technical issues of purpose of the present invention and solution, adopts the following technical solutions to realize.It proposes according to the present invention
A kind of non-refrigerated infrared focal plane probe optical window wet etching method, comprising the following steps:
(1) using silicon chip substrate as optical window, the first bottom surface of substrate and the second bottom surface successively grow silica dioxide medium layer and
Metal layer；
(2) photoresist layer of a figure is formed, on the metal layer being located on the first bottom surface by photoetching process with the photoresist
Layer is used as exposure mask；
(3) metal layer on the first bottom surface except photoresist layer exposure mask is etched；
(4) corrode the dielectric layer on the first bottom surface except photoresist layer exposure mask；
(5) photoresist layer is removed；
(6) wet etching silicon chip substrate forms the optical window cavity that corrosion depth is greater than 100 μm；
(7) metal layer and dielectric layer for successively removing reservation, obtain patterned optical window.
The object of the invention to solve the technical problems also can be used following technical measures and further realize.
Preferably, in the step of wherein described (1), silicon chip substrate is by successively using toluene, third for twin polishing silicon wafer
Three kinds of solution such as ketone and dehydrated alcohol carry out ultrasonic cleaning, and the ultrasonic time of every kind of solution is 10 ~ 15 minutes；Plasma is used again
The cleaning of body cleaning machine obtains after ten minutes.Wherein, the silicon chip substrate is monocrystalline silicon or amorphous silicon.
Preferably, in the step of wherein described (1), silica dioxide medium layer passes through plasma chemical vapor deposition shape
At furnace temperature is 250 DEG C, with a thickness of 400nm.
Preferably, in the step of wherein described (1), using DC magnetron sputtering system, it is lower than 5.0 × 10 in vacuum degree- 4Under the conditions of Pa, power are 300W and pressure is 0.5Pa, crome metal is sequentially depositing on silica dioxide medium layer, gold forms metal
Layer, wherein layers of chrome is with a thickness of 100~150nm, and layer gold is with a thickness of 250 ~ 300nm.
Preferably, in the step of wherein described (2), the photoetching process includes: by AZ6130 or AZ3100 positive-tone photo
Glue coats on the metal layer, and a figure is then formed by exposure and imaging.
Preferably, in the step of wherein described (3), using ion beam etching (IBE) method etched portions metal layer, specifically
Process includes: in vacuum less than 1.0 × 10-3Pa, under conditions of ion energy is 400ev, etching is located at the light on the first bottom surface
Other metal layers except photoresist layer exposure mask, time are 15 minutes.
Preferably, in the step of wherein described (4), using concentration is the HF acid of 25wt% as corrosive liquid, and corrosion is located at the
The other media layer except photoresist layer exposure mask on one bottom surface, etching time are 5 ~ 10 seconds.
Preferably, in the step of wherein described (5), using acetone as corrosive liquid, photoresist layer is removed, etching time is
5 minutes.
Preferably, in the step of wherein described (6), using the dielectric layer of reservation and metal layer as exposure mask protective layer, wet process
Corrosion of silicon substrate, the specific steps are as follows: it is 80 DEG C ~ 100 that the silicon chip substrate with exposure mask protective layer, which is put into temperature range,
DEG C saturation sodium hydroxide corrosive liquid in corroded, etching time be 10 minutes, form secondary figure.
Preferably, in the step of wherein described (7), the metal layer and dielectric layer of reservation are successively removed, the specific steps are as follows:
The metal layer for using mass ratio to retain for the removal of the mixed solution of the concentrated nitric acid of 1:3 and concentrated hydrochloric acid；Then use concentration for 25wt%
HF acid solution corrosion retain dielectric layer, etching time be 5 ~ 10 seconds, the optical window of release profiles is finally completed optics
The wet etching of window.
Compared with prior art, the present invention have clear advantage and the utility model has the advantages that
(1) present invention is not by increasing cost, not changing using silica dioxide medium layer and chromium gold metal layer as exposure mask protective layer
Under the premise of wet etching liquid, achieve the purpose that selective wet etching optical window, it is flat for uncooled ir coke of new generation
The encapsulation and research of surface detector lay the foundation.
(2) present invention carries out the wet process corruption of optical window using silica dioxide medium layer and chromium gold metal layer as exposure mask protective layer
Erosion does not need the optical window progress wet etching to specified region of dedicated corrosion equipment and selectivity, it is only necessary in light
It learns and silica dioxide medium layer is grown using PECVD on window, metal is formed on dielectric layer by DC magnetron sputtering system
Then chromium layer gold etches the mask layer of figure again by being lithographically formed figure using IBE method, recycle saturation hydroxide
Sodium corrosion optical window reaches selective corrosion optical window without the characteristic of etching mask protective layer to complete optical window
The purpose of production.
(3) present invention solves in selective wet etching optical window, and general photoresist is easy quilt in corrosive liquid
The problem of aoxidizing demoulding, etch mask can not be played the role of.
(4) present invention enormously simplifies preparation process, reduces preparation cost, improves technology stability and preparation effect
Rate is very beneficial for of the invention being widely popularized and applying.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention and the accompanying drawings.
Detailed description of the invention
Fig. 1 is the method flow diagram of optical window wet etching of the present invention.
Fig. 2 is the appearance diagram that infrared detector chip is encapsulated with optical window.
Fig. 3 is by plasma activated chemical vapour deposition (PECVD) method on optical window in the first bottom surface of silicon chip substrate
Silica dioxide medium layer schematic diagram is grown with the second bottom surface.
Fig. 4 is to grow chromium gold metal layer schematic diagram by magnetically controlled DC sputtering on silica dioxide medium layer.
Fig. 5 is the photoresist layer schematic diagram for forming a figure on substrate the first bottom-side metal layer by photoetching process.
Fig. 6 is that the metal layer for the first bottom surface of outer-lining bottom for etching photoresist exposure mask by ion beam etching (IBE) method shows
It is intended to.
Fig. 7 is the silica dioxide medium layer signal for corroding the first bottom surface of outer-lining bottom of photoresist exposure mask using HF acid solution
Figure.
Fig. 8 is the effect diagram that photoresist is removed using acetone.
Fig. 9 is to be illustrated using remaining dielectric layer and metal layer as the effect of exposure mask protective layer wet etching optical window
Figure, i.e., secondary pictorial diagram.
Figure 10 is the chromium gold metal layer effect diagram removed in exposure mask protective layer.
Figure 11 is the graphical optical window schematic diagram that is formed after the silicon dioxide layer removed in exposure mask protective layer.
Specific embodiment
It is of the invention to reach the technical means and efficacy that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Attached drawing and preferred embodiment, to the wet etching method of optical window proposed according to the present invention its specific embodiment, structure,
Feature and its effect, detailed description is as follows.
As shown in FIG. 1, FIG. 1 is the method flow diagram of selective wet etching optical window of the invention, this method includes
Following steps:
Step 101: by plasma activated chemical vapour deposition (PECVD) method, using the monocrystalline silicon of twin polishing or amorphous silicon as light
Window is learned, grows layer of silicon dioxide dielectric layer in the first bottom surface of silicon wafer and the second bottom surface, furnace temperature is 250 DEG C, the dioxy of deposition
SiClx thickness is 400nm；
Step 102: being sequentially depositing chromium, gold formation metal layer on silica dioxide medium layer using DC magnetron sputtering method, very
Reciprocal of duty cycle is less than 5.0 × 10-4Pa, power 300W, pressure 0.5Pa, layers of chrome with a thickness of 100~150nm, layer gold with a thickness of 250 ~
300nm；
Step 103: forming the photoresist layer of a figure, detailed process on the metal layer on the first bottom surface by photoetching process
It is: on the metal layer that AZ6130 or AZ3100 positive photoresist is coated on the first bottom surface, then passes through exposure and imaging shape
At the photoresist layer of a figure, using the photoresist layer as exposure mask；
Step 104: the metal layer on the first bottom surface except photoresist layer exposure mask is etched using ion beam etching (IBE) method,
Detailed process is: the optical window after photoetching being put into ion beam etching (IBE) system, the metal on the first bottom surface is etched
Layer, due to photoresist layer exposure mask act on, remain with a consistent metal layer of pictorial pattern, vacuum is less than 1.0 × 10- 3Pa, ion energy 400ev, etch period are 15 minutes；
Step 105: the dielectric layer on the first bottom surface of corrosion, detailed process is: the optical window after IBE is etched is put into concentration and is
Corrode the dielectric layer on the first bottom surface in the HF acid corrosion liquid of 25wt%, due to the metal layer and the on the first bottom surface after etching
The protective action of metal layer on two bottom surfaces can accomplish only to etch the medium on the first bottom surface except protective layer effect
Layer, etch period are 5 ~ 10 seconds；
Step 106: corroding photoresist layer with acetone again, etching time is 5 minutes；
Step 107: using the dielectric layer of reservation and metal layer as exposure mask protective layer, corrosion of silicon forms corrosion depth and is greater than 100 μ
The optical window cavity of m, specifically: it is 80 DEG C ~ 100 that the optical window (silicon wafer) with exposure mask protective layer, which is put into temperature range,
DEG C saturation sodium hydroxide corrosive liquid in corroded, etching time be 10 minutes, be stale-proof using sodium hydroxide corrosion of silicon
The characteristic for losing exposure mask protective layer, reaches selective corrosion optical window purpose, to form the secondary figure of optical window；
Step 108: it uses concentrated nitric acid and concentrated hydrochloric acid mass ratio for the mixed solution of 1:3, corrodes the metal layer of reservation at room temperature, when
Between be 5 ~ 8 minutes.The dielectric layer for using concentration to retain for the corrosion of the HF acid solution of 25wt% again, etching time are 5 ~ 10 seconds, release
Patterned optical window is finally completed the wet etching of optical window.
Fig. 2 is the appearance diagram that infrared detector chip is encapsulated with optical window.
Fig. 3 ~ Figure 11 is the schematic diagram for illustrating a specific embodiment of the invention.
Select N-shaped high resistant silicon wafer as optical window, crystal orientation are as follows:<100>, thickness: 425 μm.Resistivity is ρ=2-4
Ωcm-1。
As shown in Figure 3: 201 pass through the method double-sided deposition silica dioxide medium layer of PECVD first on the optical window
202。
It is as shown in Figure 4: be sequentially depositing on silica dioxide medium layer 202 by magnetically controlled DC sputtering chromium, gold formed it is two-sided
Chromium gold metal layer 203, vacuum degree is less than 5.0 × 10-4Pa, power 300W, pressure 0.5Pa, deposited metal chromium, gold, layers of chrome
With a thickness of 100~150nm, layer gold is with a thickness of 250 ~ 300nm.
It is as shown in Figure 5: the chromium gold metal layer 203 above optical window is located in a wherein metal layer by photoetching process
It is upper formed photoresist a figure, specifically: use AZ6130 or AZ3100 positive photoresist, spin speed 4000rps,
Glue thickness is 5.0 μm.Time for exposure is 13s, selects the dedicated developer solution of KMP PD238- II, and develop 30s.Photoresist will be coated with
Optical window is dried after being cleaned with deionized water, forms the photoresist layer 204 with a figure.
It is as shown in Figure 6: the optical window after the completion of above-mentioned photoetching is put into IBE etching system, vacuum degree less than 1.0 ×
10-3Pa, ion energy 400ev are exposure mask with photoresist layer 204 under the conditions of ion beam current is 80mA, and etching is located at optical window
Chromium gold metal layer 203 above mouthful, obtains and the consistent figure of 204 exposure mask of photoresist layer.
Shown in Fig. 7: the optical window after the completion of IBE is etched is put into the HF acid corrosion liquid that concentration is 25wt%, corrodes position
Silica dioxide medium layer 202 above optical window, etching time are 5 ~ 10 seconds.
Shown in Fig. 8: corroding photoresist layer 204 with acetone again, etching time is 5 minutes.
It is as shown in Figure 9: using the dielectric layer of reservation and metal layer as exposure mask protective layer, the optics of exposure mask protective layer will be had
Window is put into the saturation sodium hydroxide corrosive liquid that temperature range is 80 DEG C ~ 100 DEG C, and optical window 201, etching time are corroded
It is 10 minutes, corrosion rate is 10 μm/min.It is protected using saturation sodium hydroxide solution corrosion optical window without etching mask
The characteristic of layer, reaches selective wet etching optical window purpose, to form the secondary figure of optical window.
It is as shown in Figure 10: to use concentrated nitric acid and concentrated hydrochloric acid to configure weight ratio as the mixed solution of 1:3, at room temperature, removal is covered
Chromium gold metal layer 203 in film protective layer.
It is as shown in figure 11: to use concentration for the silica dioxide medium in the HF acid solution etching mask protective layer of 25wt% again
Layer 202, etching time are 5 ~ 10 seconds.It is finally completed the selective corrosion of optical window, obtains patterned optical window 201.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, but anything that does not depart from the technical scheme of the invention content, according to the technical essence of the invention
Any simple modification, equivalent change and modification to the above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of wet etching method of non-refrigerated infrared focal plane probe optical window, which is characterized in that including following step
It is rapid:
(1) using silicon chip substrate as optical window, the first bottom surface of substrate and the second bottom surface successively grow silica dioxide medium layer and
Metal layer；
(2) photoresist layer of a figure is formed, on the metal layer being located on the first bottom surface by photoetching process with the photoresist
Layer is used as exposure mask；
(3) metal layer on the first bottom surface except photoresist layer exposure mask is etched；
(4) corrode the dielectric layer on the first bottom surface except photoresist layer exposure mask；
(5) photoresist layer is removed；
(6) wet etching silicon chip substrate forms the optical window cavity that corrosion depth is greater than 100 μm；
(7) metal layer and dielectric layer for successively removing reservation, obtain patterned optical window.
2. the method as described in claim 1, which is characterized in that in the step (1), silicon chip substrate is by by twin polishing
Silicon wafer successively uses toluene, acetone and dehydrated alcohol to carry out ultrasonic cleaning, and the ultrasonic time of every kind of solution is 10 ~ 15 minutes；
It is cleaned with plasma washing machine and is obtained after ten minutes again.
3. the method as described in claim 1, which is characterized in that the silicon chip substrate is monocrystalline silicon or amorphous silicon.
4. the method as described in claim 1, which is characterized in that in the step (1), silica dioxide medium layer by it is equal from
Daughter chemical vapour deposition technique is formed, and furnace temperature is 250 DEG C, with a thickness of 400nm.
5. the method as described in claim 1, which is characterized in that in the step (1), using DC magnetron sputtering system,
It is lower than 5.0 × 10 in vacuum degree-4Under the conditions of Pa, power are 300W and pressure is 0.5Pa, successively sink on silica dioxide medium layer
Product crome metal, gold form metal layer, wherein layers of chrome is with a thickness of 100~150nm, and layer gold is with a thickness of 250 ~ 300nm.
6. the method as described in claim 1, which is characterized in that in the step (2), the photoetching process include: by
AZ6130 or AZ3100 positive photoresist coats on the metal layer, and a figure is then formed by exposure and imaging.
7. the method as described in claim 1, which is characterized in that in the step (3), etched using ion beam etching method
Partial metal layers, detailed process include: in vacuum less than 1.0 × 10-3Pa, under conditions of ion energy is 400ev, etching is located at
The metal layer except photoresist layer exposure mask on first bottom surface, etch period are 15 minutes.
8. the method as described in claim 1, which is characterized in that in the step (4), use concentration for the HF of 25wt% acid
As corrosive liquid, corrosion is located at the dielectric layer except the photoresist layer exposure mask on the first bottom surface, and etching time is 5 ~ 10 seconds.
9. the method as described in claim 1, which is characterized in that in the step (5), using acetone as corrosive liquid, go
Except photoresist layer, etching time is 5 minutes.
10. the method as described in claim 1, which is characterized in that in the step (6), with the dielectric layer and metal of reservation
Layer is used as exposure mask protective layer, wet etching silicon chip substrate, the specific steps are as follows: is put into the silicon chip substrate with exposure mask protective layer
Corroded in the saturation sodium hydroxide corrosive liquid for being 80 DEG C ~ 100 DEG C to temperature range, etching time is 10 minutes.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
| CN112661106A (en) * | 2021-01-29 | 2021-04-16 | 安徽光智科技有限公司 | Wafer-level packaging method of non-refrigeration detector, non-refrigeration detector and preparation method thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652326A (en) * | 2004-02-04 | 2005-08-10 | 中国科学院半导体研究所 | Efficient method for making silicon based resonant cavity reinforced detector device |
| CN1738710A (en) * | 2003-01-16 | 2006-02-22 | 李承燮 | Method for manufacturing of polymer micro needle array with LIGA process |
| CN101691200A (en) * | 2009-09-29 | 2010-04-07 | 中国科学院上海微系统与信息技术研究所 | Low temperature vacuum encapsulation structure of non-refrigeration infrared detector and manufacturing method thereof |
| CN101913553A (en) * | 2010-08-11 | 2010-12-15 | 电子科技大学 | Bulk silicon etching and gold silicon bonding combined process method |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
| CN102253238A (en) * | 2011-04-07 | 2011-11-23 | 上海交通大学 | Static suspension six-axis micro accelerometer and manufacturing method thereof |
| CN102583220A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Wafer-level vacuum packaged infrared detector and manufacturing method thereof |
| CN102738698A (en) * | 2012-06-27 | 2012-10-17 | 浙江大学 | Production method of deep submicron etched groove based on ultraviolet lithography process |
| CN105620727A (en) * | 2016-01-30 | 2016-06-01 | 中国科学院合肥物质科学研究院 | Low-noise unmanned aerial vehicle rotor wing/propeller |
| CN107299318A (en) * | 2017-05-31 | 2017-10-27 | 北京航天控制仪器研究所 | A kind of metal mask preparation method of resistance to BOE corrosion |
| CN107814351A (en) * | 2017-11-03 | 2018-03-20 | 苏州希美微纳系统有限公司 | Suitable for the bonding packaging construction and its method of RF MEMS |
-
2019
- 2019-07-04 CN CN201910600516.2A patent/CN110429158A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1738710A (en) * | 2003-01-16 | 2006-02-22 | 李承燮 | Method for manufacturing of polymer micro needle array with LIGA process |
| CN1652326A (en) * | 2004-02-04 | 2005-08-10 | 中国科学院半导体研究所 | Efficient method for making silicon based resonant cavity reinforced detector device |
| CN101691200A (en) * | 2009-09-29 | 2010-04-07 | 中国科学院上海微系统与信息技术研究所 | Low temperature vacuum encapsulation structure of non-refrigeration infrared detector and manufacturing method thereof |
| CN101913553A (en) * | 2010-08-11 | 2010-12-15 | 电子科技大学 | Bulk silicon etching and gold silicon bonding combined process method |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
| CN102253238A (en) * | 2011-04-07 | 2011-11-23 | 上海交通大学 | Static suspension six-axis micro accelerometer and manufacturing method thereof |
| CN102583220A (en) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | Wafer-level vacuum packaged infrared detector and manufacturing method thereof |
| CN102738698A (en) * | 2012-06-27 | 2012-10-17 | 浙江大学 | Production method of deep submicron etched groove based on ultraviolet lithography process |
| CN105620727A (en) * | 2016-01-30 | 2016-06-01 | 中国科学院合肥物质科学研究院 | Low-noise unmanned aerial vehicle rotor wing/propeller |
| CN107299318A (en) * | 2017-05-31 | 2017-10-27 | 北京航天控制仪器研究所 | A kind of metal mask preparation method of resistance to BOE corrosion |
| CN107814351A (en) * | 2017-11-03 | 2018-03-20 | 苏州希美微纳系统有限公司 | Suitable for the bonding packaging construction and its method of RF MEMS |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
| CN112661106A (en) * | 2021-01-29 | 2021-04-16 | 安徽光智科技有限公司 | Wafer-level packaging method of non-refrigeration detector, non-refrigeration detector and preparation method thereof |
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