CN107293535A - 一种基于倒装封装的led芯片结构 - Google Patents
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Abstract
一种基于倒装封装的LED芯片结构,属于光电子器件技术领域。该LED芯片结构中的N型电极由薄长方体结构和贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2的折线长条形结构组成,该N型电极穿插于芯片内部,使LED芯片的局部大电流被折线长条形N型电极均匀分散,解决了电流集边效应的问题,同时被折线长条形分散的电流,在局部发热也随之减少;另外,本申请LED芯片产生的热量,可通过折线形N型金属电极和隔离沟道内的绝缘陶瓷传输到外界,增加了散热途径,减小了散热热阻,有效提高了LED芯片的散热效率,使LED芯片结温比传统倒装结构降低了8.2℃,提高了LED芯片的性能和使用寿命。
Description
技术领域
本发明属于光电子器件技术领域,具体涉及一种基于倒装封装的LED芯片结构。
背景技术
发光二极管(light emitting diode,简称LED)是一种能将电能转化成光能的半导体电子元件。这种电子元件具有节能、环保、寿命长、体积小、响应时间短等优点,已广泛应用于装饰、普通照明、背光显示、汽车照明等日常生活中。目前应用最广泛的是大功率LED,但大功率LED的缺陷是,由于LED电光转化效率只有15%~25%,大部分电能以热的形式释放,所以随着芯片功率的增加,大功率LED的自热问题越来越严重;沉积在LED芯片上的热量不仅会加速芯片老化,减少LED的寿命,也会加剧光效衰减,影响其亮度和颜色,同时温度的升高会使结电流增大,大的结电流又会进一步增加热量的释放,形成恶性循环,如果LED芯片没有良好的散热性能,将会造成LED的暂时性失光甚至永久性损毁。
传统的LED芯片一般沉积在蓝宝石衬底上,这种结构的芯片所产生的热量只能通过导热系数低的蓝宝石衬底散出去,导热路径长,热阻大。另外,位于LED顶端的P型电极和引线也会挡住部分光的发射。于是提出了倒装芯片结构,如图1,倒装芯片封装是一种无引脚结构,该封装形式芯片的结构和I/O端方向向下,光直接从蓝宝石衬底取出,减少了金属电极和引线对光线的阻挡吸收,位于芯片底部的金属电极也能起到反光层的效果,增大LED的光发射率。但这种结构在大电流下,由于俄歇复合的发生,电流很容易产生电流集边效应,使LED芯片局部发热明显,发光效率明显下降,而且,芯片内部产生的热量只能穿过P型氮化物层向下传导,导热热阻比较大,不利于芯片热量的传输。
发明内容
本发明针对背景技术存在的缺陷,提出了一种基于倒装封装的LED芯片结构,该芯片结构通过在芯片上刻槽,将普通倒装结构中的N型金属电极替换成折线长条形N型金属电极,穿插于芯片内部,增大了N型金属和N型氮化物层的接触面积,使局部大电流被折线长条形N型金属电极均匀分散,解决了电流集边效应的问题,同时芯片内部所产生的热量,可通过芯片内部的折线长条形N型金属电极传输到基板,然后将热量通过散热器传递到外界,增加了散热途径,提高了散热效率,使芯片结温比传统倒装结构降低了8.2℃。
本发明的技术方案如下:
一种基于倒装封装的LED芯片结构,包括多个微晶粒单元,相邻微晶粒单元之间通过填充有高热导率绝缘陶瓷的导热通道11进行电气隔离,每个微晶粒单元包括衬底1,衬底1上依次生长的N型氮化物层2、发光层(MQW)3、P型氮化物层4、反射层5,P型电极10,N型电极9和钝化层8,所述各微晶粒单元之间通过基板12上的金属连线进行串或/和并联连接;所述N型电极9由位于基板12之上的长方体结构和贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2的折线长条形结构组成,所述N型电极9通过钝化层8与反射层5、P型氮化物层4、发光层3和P型电极10进行电气隔离,所述N型电极9与N型氮化物层2连接,P型电极10通过反射层5与P型氮化物层4连接。
进一步地,所述衬底1为蓝宝石;所述钝化层8为二氧化硅等绝缘材料。
进一步地,所述反射层5为金、银或铝等金属,其热导率高,反射效果好。
进一步地,所述高热导率绝缘陶瓷为氮化铝(AlN)陶瓷或碳化硅(SiC)陶瓷等热导率高的陶瓷材料。
进一步地,上述基于倒装封装的LED芯片结构采用低折射率的有机高分子材料和荧光粉的混合物得到的封装材料进行封装,所述低折射率的有机高分子材料为环氧树脂或硅胶等。
一种基于倒装封装的LED芯片结构的制作方法,包括以下步骤:
步骤1:在蓝宝石衬底上依次沉积N型氮化物层2、发光层3、P型氮化物层4和反射层5,形成LED的初始结构;
步骤2:在步骤1得到的LED初始结构上刻蚀至少一个贯穿反射层5、P型氮化物层4、发光层3和N型氮化物层2的隔离沟道6,形成多个单独的LED芯片,然后在每个LED芯片上刻蚀贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2的折线长条形的N型刻槽7;
步骤3:在步骤2得到的隔离沟道6内填充高热导率绝缘陶瓷,在步骤2得到的N型刻槽7的侧壁及部分反射层上形成钝化层8;
步骤4:在步骤3处理后的N型刻槽内以及钝化层上沉积金属,形成N型电极;在步骤3中不含钝化层的反射层上沉积金属,形成P型电极;
步骤5:将步骤4得到的结构倒装在设置有金属布线的基板12上,使LED芯片之间进行串联或/和并联连接,最后采用封装材料进行封装,得到所述基于倒装封装的LED芯片结构。
进一步地,步骤3所述高热导率绝缘陶瓷为氮化铝(AlN)陶瓷或碳化硅(SiC)陶瓷等热导率高的陶瓷材料。
进一步地,步骤5所述封装材料为低折射率的有机高分子材料和荧光粉的混合物,所述低折射率的有机高分子材料为环氧树脂或硅胶等。
本发明的有益效果为:
1、本发明提供的LED芯片结构采用倒装结构,将电极移至芯片下方,该结构不但有效减小了金属电极对光的遮挡吸收,而且位于芯片底部的金属电极有利于增强光线反射,提高光输出效率。
2、本发明提供的基于倒装封装的LED芯片结构中的N型电极由薄长方体结构和贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2的折线长条形结构组成,该N型电极穿插于芯片内部,使LED芯片的局部大电流被折线长条形N型电极均匀分散,解决了电流集边效应的问题,同时被折线长条形分散的电流,在局部发热也随之减少;另外,本申请LED芯片产生的热量,可通过折线形N型金属电极和隔离沟道内的绝缘陶瓷传输到外界,增加了散热途径,减小了散热热阻,有效提高了LED芯片的散热效率,使LED芯片结温比传统倒装结构降低了8.2℃,提高了LED芯片的性能和使用寿命。
附图说明
图1为现有的传统倒装LED芯片封装结构示意图。
图2为本发明提供的基于倒装封装的LED芯片结构的剖视图。
图3为本发明提供的基于倒装封装的LED芯片结构的侧视图。
图4为现有的传统倒装LED芯片的热仿真结果。
图5为本发明实施例提供的基于倒装封装的LED芯片结构的热仿真结果。
图6至图10为本发明实施例提供的倒装LED芯片的制造过程示意图。
具体实施方式
下面结合附图和实施例,详述本发明的技术方案。
如图1所示,为背景技术中提到的传统倒装LED芯片封装结构示意图,包括蓝宝石衬底1、LED芯片结构2~4、P型电极10、N型电极9、钝化层8和基板12。图4为背景技术中提到的传统倒装LED芯片封装结构的热仿真图;其中,仿真条件为:室温为25℃,单个芯片尺寸为1mm*1mm*0.2mm,芯片个数为9个,单个芯片热功率为0.8W,图4显示传统倒装芯片封装结构的芯片结温为87.4℃。
实施例
一种基于倒装封装的LED芯片结构,如图10所示,包括多个微晶粒单元,相邻微晶粒单元之间通过填充有高热导率绝缘陶瓷的导热通道11进行电气隔离,每个微晶粒单元包括蓝宝石衬底1,蓝宝石衬底1上依次生长的N型氮化物层2、发光层(MQW)3、P型氮化物层4、反射层5,P型电极10,N型电极9和钝化层8,所述各微晶粒单元之间通过基板12上的金属连线进行串或/和并联连接;所述N型电极9由位于基板12之上的薄长方体结构和贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2的折线长条形结构组成,当俯视所述N型电极时为折线长条形结构,当剖视所述N型电极时为梳状结构;所述N型电极9通过钝化层8与反射层5、P型氮化物层4、发光层3和P型电极10进行电气隔离,所述N型电极9与N型氮化物层2连接,P型电极10通过反射层5与P型氮化物层4连接。所述高热导率绝缘陶瓷为氮化铝(AlN)陶瓷或碳化硅(SiC)陶瓷等热导率高的陶瓷材料。
下面以图2所示的倒装LED芯片结构为例,结合图6至图9,对倒装LED芯片的制造方法进行描述。所述方法包含以下步骤:
步骤1:如图6,提供一蓝宝石衬底1,在所述蓝宝石衬底1上利用化学气相沉积法依次沉积N型氮化物层2、发光层3、P型氮化物层4和金属反射层5;其中制作所述反射层5的材料为金、银、铝或其他金属。
步骤2:如图7,采用等离子刻蚀的方法,在步骤1得到的结构上刻蚀出至少一个隔离沟道6,所述隔离沟道6贯穿金属反射层5、P型氮化物层4、发光层3和N型氮化物层2,暴露出蓝宝石衬底1的表面,形成多个单独的LED芯片;然后利用光刻技术在每个LED芯片上刻蚀折线长条形的N型刻槽7,折线长条形N型刻槽7位于LED器件的中心,该N型刻槽7贯穿反射层5、P型氮化物层4和发光层3连接到N型氮化物层2。
步骤3:如图8,利用金属有机化合物化学气相沉积法在步骤2得到的N型刻槽7和反射层5表面沉积一层钝化层,然后再利用刻蚀的方法去除位于N型刻槽7底部和部分反射层5上的钝化层,形成位于N型刻槽侧壁和部分反射层表面的钝化层8,所述钝化层8为二氧化硅或其他绝缘材料;
利用金属气相沉积技术,在N型刻槽内和刻槽7之间的钝化层上沉积金属,形成N型电极9,在不含钝化层的反射层上沉积金属,形成P型电极10,P型电极10通过反射层5与P型氮化物层4连接,形成LED的电气连接;
利用物理气相沉积技术,在步骤2得到的隔离沟道6内沉积具有高热导率的绝缘陶瓷形成导热通道11,以增加芯片的散热能力;所述高热导率的绝缘陶瓷为氮化铝(AlN)陶瓷或碳化硅(SiC)陶瓷等热导率高的陶瓷材料。
步骤3处理后得到的结构的俯视图如图9所示。
步骤4:如图10,将上步所得到的LED芯片倒装在基板12上,所述基板12上设置有金属布线,使LED芯片通过基板12上的金属布线与基板实现焊接并实现LED芯片间的串或/和并联连接,最后用封装材料覆盖以确保其可靠性,即可得到所述基于倒装封装的LED芯片结构。
图5为本发明实施例提供的基于倒装封装的LED芯片结构的热仿真结果;其中,仿真条件为:室温为25℃,单个芯片尺寸为1mm*1mm*0.2mm,芯片个数为9个,单个芯片热功率为0.8W,N型电极厚度为60μm,间距为250μm,材料为铝,图5显示实施例得到的LED芯片结构的芯片结温为79.2℃,相比背景技术中传统散热结构降低了8.2℃。
Claims (7)
1.一种基于倒装封装的LED芯片结构,包括多个微晶粒单元,每个微晶粒单元包括衬底(1),衬底(1)上依次生长的N型氮化物层(2)、发光层(3)、P型氮化物层(4)、反射层(5),P型电极(10),N型电极(9)和钝化层(8),所述各微晶粒单元之间通过基板(12)上的金属连线进行串或/和并联连接;所述N型电极(9)由位于基板(12)之上的长方体结构和贯穿反射层(5)、P型氮化物层(4)和发光层(3)连接到N型氮化物层(2)的折线长条形结构组成,所述N型电极(9)通过钝化层(8)与反射层(5)、P型氮化物层(4)、发光层(3)和P型电极(10)进行电气隔离,所述N型电极(9)与N型氮化物层(2)连接,P型电极(10)通过反射层(5)与P型氮化物层(4)连接。
2.根据权利要求1所述的基于倒装封装的LED芯片结构,其特征在于,所述衬底(1)为蓝宝石;所述钝化层(8)为二氧化硅。
3.根据权利要求1所述的基于倒装封装的LED芯片结构,其特征在于,所述反射层(5)为金、银或铝。
4.根据权利要求1所述的基于倒装封装的LED芯片结构,其特征在于,所述基于倒装封装的LED芯片结构采用低折射率的有机高分子材料和荧光粉的混合物得到的封装材料进行封装,所述低折射率的有机高分子材料为环氧树脂或硅胶。
5.一种基于倒装封装的LED芯片结构的制作方法,包括以下步骤:
步骤1:在衬底上依次沉积N型氮化物层(2)、发光层(3)、P型氮化物层(4)和反射层(5),形成LED的初始结构;
步骤2:在步骤1得到的LED初始结构上刻蚀至少一个贯穿反射层(5)、P型氮化物层(4)、发光层(3)和N型氮化物层(2)的隔离沟道(6),形成多个单独的LED芯片,然后在每个LED芯片上刻蚀贯穿反射层(5)、P型氮化物层(4)和发光层(3)连接到N型氮化物层(2)的折线长条形的N型刻槽(7);
步骤3:在步骤2得到的隔离沟道(6)内填充高热导率绝缘陶瓷,在步骤2得到的N型刻槽(7)的侧壁及部分反射层上形成钝化层(8);
步骤4:在步骤3处理后的N型刻槽内以及钝化层上沉积金属,形成N型电极;在步骤3中不含钝化层的反射层上沉积金属,形成P型电极;
步骤5:将步骤4得到的结构倒装在设置有金属布线的基板(12)上,使LED芯片之间进行串联或/和并联连接,最后采用封装材料进行封装,得到所述基于倒装封装的LED芯片结构。
6.根据权利要求5所述的基于倒装封装的LED芯片结构的制作方法,其特征在于,步骤3所述高热导率绝缘陶瓷为氮化铝陶瓷或碳化硅陶瓷。
7.根据权利要求5所述的基于倒装封装的LED芯片结构的制作方法,其特征在于,步骤5所述封装材料为低折射率的有机高分子材料和荧光粉的混合物,所述低折射率的有机高分子材料为环氧树脂或硅胶。
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