CN107290886A - FFS type liquid crystal displays and preparation method thereof - Google Patents

FFS type liquid crystal displays and preparation method thereof Download PDF

Info

Publication number
CN107290886A
CN107290886A CN201710630007.5A CN201710630007A CN107290886A CN 107290886 A CN107290886 A CN 107290886A CN 201710630007 A CN201710630007 A CN 201710630007A CN 107290886 A CN107290886 A CN 107290886A
Authority
CN
China
Prior art keywords
pixel electrode
electrode
liquid crystal
layer
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710630007.5A
Other languages
Chinese (zh)
Inventor
孙杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to CN201710630007.5A priority Critical patent/CN107290886A/en
Publication of CN107290886A publication Critical patent/CN107290886A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

The invention discloses a kind of FFS types liquid crystal display and preparation method thereof, on the basis of existing processing procedure, figure needed for being etched two pixel electrodes and its insulating protective layer between public electrode by one of lithographic process is prepared from, without increasing lithographic process.Longitudinal ion dispensing passage is formed between pixel electrode and public electrode, the aggregation of ionic charge above pixel electrode is effectively reduced, the image retention problem of influence liquid crystal display quality is solved, production cost is saved while liquid crystal display is effectively improved.

Description

FFS type liquid crystal displays and preparation method thereof
Technical field
The present invention relates to technical field of liquid crystal display, more particularly, to a kind of FFS types liquid crystal display and preparation method thereof.
Background technology
With the development of photoelectricity and semiconductor technology, liquid crystal display is also flourished.In many liquid crystal displays In device, with high spatial utilization ratio, small volume, the high and low consumption power of display resolution, radiationless and low EMI etc. Thin Film Transistor-LCD (the Thin Film Transistor Liquid Crystal Display, letter of advantageous characteristic Claim TFT-LCD), have recently become the main flow in market.Because TFT-LCD is widely used in notebook computer, mobile phone and TV etc. With in the closely bound up electronic product of living, people are for the requirement more and more higher of picture quality, thus the improvement of picture quality Also the target persistently pursued as association area always.
Fringe field switching (Fringe Field Switching, abbreviation FFS) technology is can changing for appearance recent years One of technology of kind LCD image quality, can realize that high-penetration and big visual angle etc. are required simultaneously.FFS type liquid crystal displays pass through same Electrode produces fringe field between pixel in plane, makes the whereabouts liquid crystal molecule between electrode and directly over electrode can be (parallel In substrate) in-plane rotates conversion, so as to improve the light transmission efficiency of liquid crystal layer.
With reference to Fig. 1, existing FFS types liquid crystal display device structure schematic diagram.The structure master of existing FFS types liquid crystal display If being made up of a tft array substrate 11, a CF substrates 12 and the liquid crystal layer 13 being configured between two substrates, wherein, TFT Array base palte 11 includes preparing public electrode 111, insulating protective layer 112, pixel electrode 113 and orientation on substrate 110 Film 114.Existing FFS types liquid crystal display between pixel electrode 113, insulating protective layer 112 and public electrode 111 by forming Plane electric fields (in figure shown in dotted line), the rotation of the liquid crystal molecule of liquid crystal layer 13 is controlled with this, so as to control the display of image. Due to its special plane electric fields structure, image retention (Image Sticking, abbreviation IS) problem is more prominent with respect to other patterns.
With reference to Fig. 2, existing FFS types liquid crystal display ion building-up effect schematic diagram.Existing FFS types liquid crystal display Due to the effect of plane electric fields (as shown in phantom in FIG.), the ionic charge 201 in the material such as liquid crystal can be at pixel electrode 113 Aggregation, so as to cause charge residue, can cause the generation of transverse bias, so as to form influence liquid crystal display in liquid crystal display The image retention problem of device quality.
Accordingly, it would be desirable to which the design method to existing FFS types liquid crystal display is improved, to lift liquid crystal display product Matter, saving production cost.
The content of the invention
It is an object of the present invention to provide a kind of FFS types liquid crystal display and preparation method thereof, to solve to influence liquid crystal Show the image retention problem of device quality, lift liquid crystal display quality, and save production cost.
To achieve the above object, the invention provides a kind of FFS types liquid crystal display, including tft array substrate;It is described Tft array substrate includes:The public electrode being arranged on the first underlay substrate, the insulation protection being arranged on the public electrode Layer and the first pixel electrode and the second pixel electrode being arranged on the insulating protective layer;The insulating protective layer is described Provided with the perforate for exposing the public electrode between first pixel electrode and the second pixel electrode.
To achieve the above object, present invention also offers a kind of preparation method of FFS types liquid crystal display, the preparation side Method comprises the following steps:Step 1, one first underlay substrate of offer, public electrode is formed on first underlay substrate;Step 2nd, insulating protective layer is formed on the public electrode;Step 3, on the insulating protective layer form pixel electrode layer;Step 4th, the first pixel electrode and the second pixel electrode are formed on the pixel electrode layer by lithographic process, while described first The perforate for exposing the public electrode is formed on the insulating protective layer between pixel electrode and the second pixel electrode.
It is an advantage of the current invention that on the basis of existing processing procedure, by one of lithographic process by two pixel electrodes and its with Figure needed for insulating protective layer between public electrode is etched is prepared from, without increasing lithographic process.Pixel electrode with it is public Longitudinal ion dispensing passage is formed between electrode, the aggregation of ionic charge above pixel electrode is effectively reduced, solves influence liquid crystal The image retention problem of display quality, production cost is saved while liquid crystal display is effectively improved.
Brief description of the drawings
Fig. 1, existing FFS types liquid crystal display device structure schematic diagram;
Fig. 2, existing FFS types liquid crystal display ion building-up effect schematic diagram;
Fig. 3, FFS types liquid crystal display device structure schematic diagram of the present invention;
Fig. 4, FFS types liquid crystal display ion dispersion effect schematic diagram of the present invention;
Fig. 5, the flow chart of the preparation method of FFS types liquid crystal display of the present invention;
Fig. 6, the schematic diagram of the preparation method step 1 of FFS types liquid crystal display of the present invention;
Fig. 7, the schematic diagram of the preparation method step 2 of FFS types liquid crystal display of the present invention;
Fig. 8, the schematic diagram of the preparation method step 3 of FFS types liquid crystal display of the present invention;
Fig. 9, the schematic diagram of the preparation method step 4 of FFS types liquid crystal display of the present invention;
Figure 10, the schematic diagram of the preparation method step 41 of FFS types liquid crystal display of the present invention;
Figure 11, the schematic diagram of the preparation method step 42 of FFS types liquid crystal display of the present invention;
Figure 12, the schematic diagram of the preparation method step 43 of FFS types liquid crystal display of the present invention;
Figure 13, the schematic diagram of the preparation method step 44 of FFS types liquid crystal display of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and embodiment, FFS type liquid crystal displays provided the present invention and preparation method thereof are made detailed Describe in detail bright.Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this hair Embodiment in bright, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made Example, belongs to the scope of protection of the invention.
With reference to Fig. 3, FFS types liquid crystal display device structure schematic diagram of the present invention.Described FFS type liquid crystal display bags Tft array substrate 31 is included, the tft array substrate 31 includes:The public electrode 311 that is arranged on the first underlay substrate 310, set Put the insulating protective layer 312 on the public electrode 311 and the first pixel being arranged on the insulating protective layer 312 electricity Pole 313a and the second pixel electrode 313b.The insulating protective layer 312 is in the first pixel electrode 313a and the second pixel electricity Provided with the perforate 312a for exposing the public electrode 311 between the 313b of pole.First underlay substrate 310 is preferably glass base Plate.Described FFS types liquid crystal display also includes the CF substrates being oppositely arranged with the tft array substrate 31, and is configured at Liquid crystal layer between two substrates.
It is preferred that, the perforate 312a is by lithographic process by the first pixel electrode 313a and the second pixel electrode Insulating protective layer 312 between 313b etches required figure and exposes the public electrode 311 and formed.Described optical graving Journey includes the techniques such as photoresist coating, mask, exposure, etching and photoresist lift off.That is, the FFS types of the present invention arrived Liquid crystal display is on the basis of existing processing procedure, by one of lithographic process by two pixel electrodes and its exhausted between public electrode Edge protective layer etches required figure, prepares new FFS type liquid crystal displays.Do not increasing the feelings of lithographic process and cost Under condition, production cost is saved while liquid crystal display is effectively improved.
The tft array substrate 31 also includes:It is arranged on the public electrode 311, insulating protective layer 312, the first pixel On electrode 313a and the second pixel electrode 313b and cover the alignment film 314 of whole public electrode 311, for CF substrates into Box (cell) processing procedure, and control orientation and the angle of liquid crystal layer liquid crystal molecule.
With reference to Fig. 4, FFS types liquid crystal display ion dispersion effect schematic diagram of the present invention.FFS type liquid crystal displays By forming plane between the first pixel electrode 313a, the second pixel electrode 313b, insulating protective layer 112 and public electrode 111 Electric field (in figure shown in dotted line), the rotation of the liquid crystal molecule of liquid crystal layer is controlled with this, so as to control the display of image.By institute Perforate 312a is stated, longitudinal ion point is formed between the first pixel electrode 313a, public electrode 311, the second pixel electrode 313b Passage is dissipated, so that the aggregation of ionic charge 301 above the first pixel electrode 313a and the second pixel electrode 313b is reduced, solution The image retention problem of liquid crystal display quality is certainly influenceed, liquid crystal display quality can be effectively lifted.
FFS types liquid crystal display of the present invention is on the basis of existing processing procedure, by one of lithographic process by two pictures Figure needed for plain electrode and its insulating protective layer between public electrode are etched is prepared from, without increasing lithographic process.Picture Longitudinal ion dispensing passage is formed between plain electrode and public electrode, the aggregation of ionic charge above pixel electrode, solution is effectively reduced The image retention problem for influence liquid crystal display quality of having determined, production cost is saved while liquid crystal display is effectively improved.
Please also refer to Fig. 5-9, wherein, Fig. 5 is the flow of the preparation method of FFS types liquid crystal display of the present invention Figure;Fig. 6 is the schematic diagram of the preparation method step 1 of FFS types liquid crystal display of the present invention;Fig. 7 is of the present invention The schematic diagram of the preparation method step 2 of FFS type liquid crystal displays;Fig. 8 is the preparation of FFS types liquid crystal display of the present invention The schematic diagram of method and step 3;Fig. 9 is the schematic diagram of the preparation method step 4 of FFS types liquid crystal display of the present invention.
As shown in figure 5, the preparation method of FFS types liquid crystal display of the present invention comprises the following steps:S51:Step The 1st, one first underlay substrate is provided, public electrode is formed on first underlay substrate;S52:Step 2, in the common electrical Insulating protective layer is formed on extremely;S53:Step 3, on the insulating protective layer form pixel electrode layer;S54:Step 4, pass through Lithographic process forms the first pixel electrode and the second pixel electrode on the pixel electrode layer, while in first pixel electricity The perforate for exposing the public electrode is formed on the insulating protective layer between pole and the second pixel electrode;It is given below detailed It is thin to explain.
Step 1, as shown in Figure 6 there is provided one first underlay substrate 310, form public on first underlay substrate 310 Electrode 311.
Specifically, layer of transparent can be deposited on the first underlay substrate 310 using magnetron sputtering or the method for thermal evaporation Conductive film, forms public electrode 311.First underlay substrate 310 is preferably glass substrate.The technique for forming public electrode It is widely used to structure in the preparation of current liquid crystal display, here is omitted.
Step 2, as shown in fig. 7, on the public electrode 311 formed insulating protective layer 312.
Specifically, it can complete shown in above-mentioned Fig. 6 on the first underlay substrate 310 of structure graph, using plasma Strengthen chemical vapor deposition (abbreviation PECVD) method and deposit one layer of insulating protective layer, protected with forming insulation on public electrode 311 Sheath 312.
Step 3, as shown in figure 8, on the insulating protective layer 312 formed pixel electrode layer 313.
Specifically, it can complete shown in above-mentioned Fig. 7 on the first underlay substrate 310 of structure graph, using magnetron sputtering Or the method deposition transparent conductive film of thermal evaporation, form pixel electrode layer 313.
Step 4, as shown in figure 9, forming the first pixel electrode 313a on the pixel electrode layer 313 by lithographic process With the second pixel electrode 313b, while the insulation between the first pixel electrode 313a and the second pixel electrode 313b The perforate 312a for exposing the public electrode 311 is formed on protective layer 312.
Specifically, on the first underlay substrate 310 of structure graph, one of photoetching can passed through shown in the above-mentioned Fig. 8 of completion Insulating protective layer 312 between the first pixel electrode 313a and the second pixel electrode 313b is etched required figure by processing procedure And expose the public electrode 311 and form the perforate 312a.Described lithographic process includes photoresist coating, mask, exposure The techniques such as light, etching and photoresist lift off.By the perforate 312a, the first pixel electrode 313a, public electrode 311, Longitudinal ion dispensing passage is formed between second pixel electrode 313b, so as to reduce the first pixel electrode 313a and the second pixel The aggregation of ionic charge above electrode 313b.
Please also refer to Figure 10-13, wherein, Figure 10 walks for the preparation method of FFS types liquid crystal display of the present invention Rapid 41 schematic diagram;Figure 11 is the schematic diagram of the preparation method step 42 of FFS types liquid crystal display of the present invention;Figure 12 is The schematic diagram of the preparation method step 43 of FFS types liquid crystal display of the present invention;Figure 13 is FFS types liquid of the present invention The schematic diagram of the preparation method step 44 of crystal display.
Figure 10-13 is the flow chart of the embodiment of FFS types FFS type liquid crystal displays preparation method one of the present invention, shown in Fig. 9 In technical scheme, step 4 is specially:
Step 41, as shown in Figure 10, one layer of photoresist formation photoresist layer of coating on the pixel electrode layer 313 1001, while providing a mask plate 1002 to carry out photoetching to the photoresist layer 1001.
Specifically, mask plate 1002, which can be used, includes lighttight first area 1002a and semi-transparent second area 1002b mask plate, such as intermediate tone mask plate (Half-toneMask, HTM);Photoetching can be carried out using UV light.
Step 42, as shown in figure 11, utilizes 1002 pairs of the mask plate photoresist layer 1001 to carry out photoetching, forms a light Resistance layer through hole 1001a exposes the pixel electrode layer 312.
Specifically, on the first underlay substrate 310 of structure graph, mask plate can utilized shown in the above-mentioned Figure 10 of completion Photoresist layer 1001 on 1002 pairs of pixel electrode layers 313 is exposed, developed, after thinning, the corresponding mask plate of photoresist layer 1001 1002 transmission regions form a photoresist layer through hole 1011 in the top of respective pixel electrode layer 313 and expose the pixel electrode layer 313。
Step 43, as shown in figure 12, performed etching by 1011 pairs of the photoresist layer through hole pixel electrode layer 312, Form the first pixel electrode 313a and the second pixel electrode 313b, the first pixel electrode 313a and the second pixel electrode A pixel electrode through hole 313c is formed between 313b and exposes the insulating protective layer 312.
Specifically, it can complete shown in above-mentioned Figure 11 on the first underlay substrate 310 of structure graph, with what is be not etched Photoresist layer 1001 is performed etching as etching barrier layer to the pixel electrode layer 313, forms the first pixel electrode 313a With the second pixel electrode 313b, pixel electrode through hole 313c is formed between two pixel electrodes and exposes the insulating protective layer 312.
Step 44, as shown in figure 13, by the photoresist layer through hole 1011 and pixel electrode through hole 313c to the insulation Protective layer 312 is performed etching, and forms the perforate 312a for exposing the public electrode 311.
Specifically, it can complete shown in above-mentioned Figure 12 on the first underlay substrate 310 of structure graph, with first picture Plain electrode 313a, the photoresist layer 1001 that is not etched on the second pixel electrode 313b and two pixel electrodes is as etch stopper Layer, is performed etching to the insulating protective layer 312, forms the perforate 312a for exposing the public electrode 311.
The photoresist layer 1001 that step 45, stripping are not etched, forms FFS types liquid crystal display of the present invention Tft array substrate, as shown in Figure 9.Longitudinal ion dispensing passage is formed between two pixel electrodes and public electrode, pixel is effectively reduced The aggregation of ionic charge above electrode, solves the image retention problem of influence liquid crystal display quality.
It is preferred that, the preparation method of FFS types liquid crystal display of the present invention further comprises:S55:Step 5, institute State and covering is formed on public electrode 311, insulating protective layer 312, the first pixel electrode 313a and the second pixel electrode 313b entirely The alignment film 314 of public electrode 311, as shown in Figure 3.
The preparation method of FFS types liquid crystal display of the present invention, is on the basis of existing processing procedure, to pass through one of photoetching Figure needed for processing procedure etches two pixel electrodes and its insulating protective layer between public electrode is prepared from, without increasing light Scribe journey.Longitudinal ion dispensing passage is formed between pixel electrode and public electrode, ionic charge above pixel electrode is effectively reduced Aggregation, solve influence liquid crystal display quality image retention problem, while liquid crystal display is effectively improved save production Cost.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be regarded as Protection scope of the present invention.

Claims (8)

1. a kind of FFS types liquid crystal display, including tft array substrate;Characterized in that,
The tft array substrate includes:The public electrode that is arranged on the first underlay substrate, it is arranged on the public electrode Insulating protective layer and the first pixel electrode and the second pixel electrode being arranged on the insulating protective layer;
The insulating protective layer is provided between first pixel electrode and the second pixel electrode exposes the public electrode Perforate.
2. liquid crystal display as claimed in claim 1, it is characterised in that the perforate is by lithographic process by first picture Insulating protective layer between plain electrode and the second pixel electrode etches required figure and exposes the public electrode and formed.
3. liquid crystal display as claimed in claim 1, it is characterised in that the tft array substrate also includes:It is arranged on described On public electrode, insulating protective layer, the first pixel electrode and the second pixel electrode and cover the alignment film of whole public electrode.
4. liquid crystal display as claimed in claim 1, it is characterised in that pass through the perforate, first pixel electrode, public affairs Longitudinal ion dispensing passage is formed between common electrode, the second pixel electrode, so as to reduce first pixel electrode and the second pixel The aggregation of ionic charge above electrode.
5. a kind of preparation method of FFS types liquid crystal display, it is characterised in that the preparation method comprises the following steps:
Step 1, one first underlay substrate of offer, public electrode is formed on first underlay substrate;
Step 2, on the public electrode form insulating protective layer;
Step 3, on the insulating protective layer form pixel electrode layer;
Step 4, the first pixel electrode and the second pixel electrode formed on the pixel electrode layer by lithographic process, while Formed on the insulating protective layer between first pixel electrode and the second pixel electrode and expose the public electrode Perforate.
6. preparation method as claimed in claim 5, it is characterised in that the step 4 includes:
One layer of photoresist formation photoresist layer is coated with the pixel electrode layer, while providing a mask plate with to the photoresistance Layer carries out photoetching;
Photoetching is carried out to the photoresist layer using the mask plate, a photoresist layer through hole is formed and exposes the pixel electrode layer;
The pixel electrode layer is performed etching by the photoresist layer through hole, first pixel electrode and the second pixel is formed Electrode, forms a pixel electrode through hole between first pixel electrode and the second pixel electrode and exposes the insulation protection Layer;
The insulating protective layer is performed etching by the photoresist layer through hole and pixel electrode through hole, formation exposes the public affairs The perforate of common electrode;
Peel off the photoresist layer not being etched.
7. preparation method as claimed in claim 5, it is characterised in that described by the perforate formed in the step 4 Longitudinal ion dispensing passage is formed between first pixel electrode, public electrode, the second pixel electrode, so as to reduce first pixel The aggregation of ionic charge above electrode and the second pixel electrode.
8. preparation method as claimed in claim 5, it is characterised in that the preparation method also includes:
Step 5, to form on the public electrode, insulating protective layer, the first pixel electrode and the second pixel electrode covering whole The alignment film of public electrode.
CN201710630007.5A 2017-07-28 2017-07-28 FFS type liquid crystal displays and preparation method thereof Pending CN107290886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710630007.5A CN107290886A (en) 2017-07-28 2017-07-28 FFS type liquid crystal displays and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710630007.5A CN107290886A (en) 2017-07-28 2017-07-28 FFS type liquid crystal displays and preparation method thereof

Publications (1)

Publication Number Publication Date
CN107290886A true CN107290886A (en) 2017-10-24

Family

ID=60102470

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710630007.5A Pending CN107290886A (en) 2017-07-28 2017-07-28 FFS type liquid crystal displays and preparation method thereof

Country Status (1)

Country Link
CN (1) CN107290886A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113406804A (en) * 2021-07-15 2021-09-17 业成科技(成都)有限公司 Head-mounted display

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070182899A1 (en) * 2006-02-09 2007-08-09 Sanyo Epson Imaging Devices Corp. Liquid crystal display device
CN103488004A (en) * 2013-09-26 2014-01-01 京东方科技集团股份有限公司 Array substrate, liquid crystal panel and display device
CN104122701A (en) * 2014-07-28 2014-10-29 深圳市华星光电技术有限公司 Liquid crystal display panel, manufacturing method thereof and array substrate
CN104155814A (en) * 2014-08-29 2014-11-19 昆山龙腾光电有限公司 Liquid crystal display device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070182899A1 (en) * 2006-02-09 2007-08-09 Sanyo Epson Imaging Devices Corp. Liquid crystal display device
CN103488004A (en) * 2013-09-26 2014-01-01 京东方科技集团股份有限公司 Array substrate, liquid crystal panel and display device
CN104122701A (en) * 2014-07-28 2014-10-29 深圳市华星光电技术有限公司 Liquid crystal display panel, manufacturing method thereof and array substrate
CN104155814A (en) * 2014-08-29 2014-11-19 昆山龙腾光电有限公司 Liquid crystal display device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113406804A (en) * 2021-07-15 2021-09-17 业成科技(成都)有限公司 Head-mounted display

Similar Documents

Publication Publication Date Title
CN103208491B (en) Array base palte and manufacture method, display unit
US9709864B2 (en) Array substrate and its manufacturing method and display device
US9613986B2 (en) Array substrate and its manufacturing method, display device
CN102629664B (en) Array substrate and manufacturing method thereof, and display apparatus
CN105652541B (en) The production method and liquid crystal display panel of array substrate
CN103489876B (en) A kind of array base palte and preparation method thereof, display device
US10651204B2 (en) Array substrate, its manufacturing method and display device
CN102637636A (en) Organic thin-film transistor array substrate, method for manufacturing same and display device
WO2017012306A1 (en) Method for manufacturing array substrate, array substrate, and display device
US8895334B2 (en) Thin film transistor array substrate and method for manufacturing the same and electronic device
CN105137672B (en) Array substrate and its manufacturing method
WO2013044836A1 (en) Array substrate and manufacturing method thereof and display device
CN104091761B (en) Patterned film preparation method, display substrate and display device
CN103454798B (en) Array substrate and manufacturing method thereof and display device
CN103309105B (en) Array base palte and preparation method thereof, display device
CN102789106B (en) Organic thin film transistor array substrate, preparation method thereof and display device
CN103515375B (en) Array base palte and manufacture method thereof and display unit
CN105957867B (en) Array substrate motherboard and preparation method thereof, display device
WO2014166181A1 (en) Thin-film transistor and manufacturing method thereof, array base plate and display apparatus
CN101825815A (en) TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof
CN106019751A (en) Array substrate and manufacturing method thereof and display device
CN103560114B (en) A kind of tft array substrate and its manufacture method, display device
CN105070765B (en) Thin film transistor (TFT), array substrate, display device and manufacturing method
US20160322404A1 (en) Methods for producing tft array substrate and display apparatus
WO2013185454A1 (en) Array substrate, fabrication method thereof, and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20171024

RJ01 Rejection of invention patent application after publication