CN107290886A - FFS type liquid crystal displays and preparation method thereof - Google Patents
FFS type liquid crystal displays and preparation method thereof Download PDFInfo
- Publication number
- CN107290886A CN107290886A CN201710630007.5A CN201710630007A CN107290886A CN 107290886 A CN107290886 A CN 107290886A CN 201710630007 A CN201710630007 A CN 201710630007A CN 107290886 A CN107290886 A CN 107290886A
- Authority
- CN
- China
- Prior art keywords
- pixel electrode
- electrode
- liquid crystal
- layer
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of FFS types liquid crystal display and preparation method thereof, on the basis of existing processing procedure, figure needed for being etched two pixel electrodes and its insulating protective layer between public electrode by one of lithographic process is prepared from, without increasing lithographic process.Longitudinal ion dispensing passage is formed between pixel electrode and public electrode, the aggregation of ionic charge above pixel electrode is effectively reduced, the image retention problem of influence liquid crystal display quality is solved, production cost is saved while liquid crystal display is effectively improved.
Description
Technical field
The present invention relates to technical field of liquid crystal display, more particularly, to a kind of FFS types liquid crystal display and preparation method thereof.
Background technology
With the development of photoelectricity and semiconductor technology, liquid crystal display is also flourished.In many liquid crystal displays
In device, with high spatial utilization ratio, small volume, the high and low consumption power of display resolution, radiationless and low EMI etc.
Thin Film Transistor-LCD (the Thin Film Transistor Liquid Crystal Display, letter of advantageous characteristic
Claim TFT-LCD), have recently become the main flow in market.Because TFT-LCD is widely used in notebook computer, mobile phone and TV etc.
With in the closely bound up electronic product of living, people are for the requirement more and more higher of picture quality, thus the improvement of picture quality
Also the target persistently pursued as association area always.
Fringe field switching (Fringe Field Switching, abbreviation FFS) technology is can changing for appearance recent years
One of technology of kind LCD image quality, can realize that high-penetration and big visual angle etc. are required simultaneously.FFS type liquid crystal displays pass through same
Electrode produces fringe field between pixel in plane, makes the whereabouts liquid crystal molecule between electrode and directly over electrode can be (parallel
In substrate) in-plane rotates conversion, so as to improve the light transmission efficiency of liquid crystal layer.
With reference to Fig. 1, existing FFS types liquid crystal display device structure schematic diagram.The structure master of existing FFS types liquid crystal display
If being made up of a tft array substrate 11, a CF substrates 12 and the liquid crystal layer 13 being configured between two substrates, wherein, TFT
Array base palte 11 includes preparing public electrode 111, insulating protective layer 112, pixel electrode 113 and orientation on substrate 110
Film 114.Existing FFS types liquid crystal display between pixel electrode 113, insulating protective layer 112 and public electrode 111 by forming
Plane electric fields (in figure shown in dotted line), the rotation of the liquid crystal molecule of liquid crystal layer 13 is controlled with this, so as to control the display of image.
Due to its special plane electric fields structure, image retention (Image Sticking, abbreviation IS) problem is more prominent with respect to other patterns.
With reference to Fig. 2, existing FFS types liquid crystal display ion building-up effect schematic diagram.Existing FFS types liquid crystal display
Due to the effect of plane electric fields (as shown in phantom in FIG.), the ionic charge 201 in the material such as liquid crystal can be at pixel electrode 113
Aggregation, so as to cause charge residue, can cause the generation of transverse bias, so as to form influence liquid crystal display in liquid crystal display
The image retention problem of device quality.
Accordingly, it would be desirable to which the design method to existing FFS types liquid crystal display is improved, to lift liquid crystal display product
Matter, saving production cost.
The content of the invention
It is an object of the present invention to provide a kind of FFS types liquid crystal display and preparation method thereof, to solve to influence liquid crystal
Show the image retention problem of device quality, lift liquid crystal display quality, and save production cost.
To achieve the above object, the invention provides a kind of FFS types liquid crystal display, including tft array substrate;It is described
Tft array substrate includes:The public electrode being arranged on the first underlay substrate, the insulation protection being arranged on the public electrode
Layer and the first pixel electrode and the second pixel electrode being arranged on the insulating protective layer;The insulating protective layer is described
Provided with the perforate for exposing the public electrode between first pixel electrode and the second pixel electrode.
To achieve the above object, present invention also offers a kind of preparation method of FFS types liquid crystal display, the preparation side
Method comprises the following steps:Step 1, one first underlay substrate of offer, public electrode is formed on first underlay substrate;Step
2nd, insulating protective layer is formed on the public electrode;Step 3, on the insulating protective layer form pixel electrode layer;Step
4th, the first pixel electrode and the second pixel electrode are formed on the pixel electrode layer by lithographic process, while described first
The perforate for exposing the public electrode is formed on the insulating protective layer between pixel electrode and the second pixel electrode.
It is an advantage of the current invention that on the basis of existing processing procedure, by one of lithographic process by two pixel electrodes and its with
Figure needed for insulating protective layer between public electrode is etched is prepared from, without increasing lithographic process.Pixel electrode with it is public
Longitudinal ion dispensing passage is formed between electrode, the aggregation of ionic charge above pixel electrode is effectively reduced, solves influence liquid crystal
The image retention problem of display quality, production cost is saved while liquid crystal display is effectively improved.
Brief description of the drawings
Fig. 1, existing FFS types liquid crystal display device structure schematic diagram;
Fig. 2, existing FFS types liquid crystal display ion building-up effect schematic diagram;
Fig. 3, FFS types liquid crystal display device structure schematic diagram of the present invention;
Fig. 4, FFS types liquid crystal display ion dispersion effect schematic diagram of the present invention;
Fig. 5, the flow chart of the preparation method of FFS types liquid crystal display of the present invention;
Fig. 6, the schematic diagram of the preparation method step 1 of FFS types liquid crystal display of the present invention;
Fig. 7, the schematic diagram of the preparation method step 2 of FFS types liquid crystal display of the present invention;
Fig. 8, the schematic diagram of the preparation method step 3 of FFS types liquid crystal display of the present invention;
Fig. 9, the schematic diagram of the preparation method step 4 of FFS types liquid crystal display of the present invention;
Figure 10, the schematic diagram of the preparation method step 41 of FFS types liquid crystal display of the present invention;
Figure 11, the schematic diagram of the preparation method step 42 of FFS types liquid crystal display of the present invention;
Figure 12, the schematic diagram of the preparation method step 43 of FFS types liquid crystal display of the present invention;
Figure 13, the schematic diagram of the preparation method step 44 of FFS types liquid crystal display of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and embodiment, FFS type liquid crystal displays provided the present invention and preparation method thereof are made detailed
Describe in detail bright.Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this hair
Embodiment in bright, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
With reference to Fig. 3, FFS types liquid crystal display device structure schematic diagram of the present invention.Described FFS type liquid crystal display bags
Tft array substrate 31 is included, the tft array substrate 31 includes:The public electrode 311 that is arranged on the first underlay substrate 310, set
Put the insulating protective layer 312 on the public electrode 311 and the first pixel being arranged on the insulating protective layer 312 electricity
Pole 313a and the second pixel electrode 313b.The insulating protective layer 312 is in the first pixel electrode 313a and the second pixel electricity
Provided with the perforate 312a for exposing the public electrode 311 between the 313b of pole.First underlay substrate 310 is preferably glass base
Plate.Described FFS types liquid crystal display also includes the CF substrates being oppositely arranged with the tft array substrate 31, and is configured at
Liquid crystal layer between two substrates.
It is preferred that, the perforate 312a is by lithographic process by the first pixel electrode 313a and the second pixel electrode
Insulating protective layer 312 between 313b etches required figure and exposes the public electrode 311 and formed.Described optical graving
Journey includes the techniques such as photoresist coating, mask, exposure, etching and photoresist lift off.That is, the FFS types of the present invention arrived
Liquid crystal display is on the basis of existing processing procedure, by one of lithographic process by two pixel electrodes and its exhausted between public electrode
Edge protective layer etches required figure, prepares new FFS type liquid crystal displays.Do not increasing the feelings of lithographic process and cost
Under condition, production cost is saved while liquid crystal display is effectively improved.
The tft array substrate 31 also includes:It is arranged on the public electrode 311, insulating protective layer 312, the first pixel
On electrode 313a and the second pixel electrode 313b and cover the alignment film 314 of whole public electrode 311, for CF substrates into
Box (cell) processing procedure, and control orientation and the angle of liquid crystal layer liquid crystal molecule.
With reference to Fig. 4, FFS types liquid crystal display ion dispersion effect schematic diagram of the present invention.FFS type liquid crystal displays
By forming plane between the first pixel electrode 313a, the second pixel electrode 313b, insulating protective layer 112 and public electrode 111
Electric field (in figure shown in dotted line), the rotation of the liquid crystal molecule of liquid crystal layer is controlled with this, so as to control the display of image.By institute
Perforate 312a is stated, longitudinal ion point is formed between the first pixel electrode 313a, public electrode 311, the second pixel electrode 313b
Passage is dissipated, so that the aggregation of ionic charge 301 above the first pixel electrode 313a and the second pixel electrode 313b is reduced, solution
The image retention problem of liquid crystal display quality is certainly influenceed, liquid crystal display quality can be effectively lifted.
FFS types liquid crystal display of the present invention is on the basis of existing processing procedure, by one of lithographic process by two pictures
Figure needed for plain electrode and its insulating protective layer between public electrode are etched is prepared from, without increasing lithographic process.Picture
Longitudinal ion dispensing passage is formed between plain electrode and public electrode, the aggregation of ionic charge above pixel electrode, solution is effectively reduced
The image retention problem for influence liquid crystal display quality of having determined, production cost is saved while liquid crystal display is effectively improved.
Please also refer to Fig. 5-9, wherein, Fig. 5 is the flow of the preparation method of FFS types liquid crystal display of the present invention
Figure;Fig. 6 is the schematic diagram of the preparation method step 1 of FFS types liquid crystal display of the present invention;Fig. 7 is of the present invention
The schematic diagram of the preparation method step 2 of FFS type liquid crystal displays;Fig. 8 is the preparation of FFS types liquid crystal display of the present invention
The schematic diagram of method and step 3;Fig. 9 is the schematic diagram of the preparation method step 4 of FFS types liquid crystal display of the present invention.
As shown in figure 5, the preparation method of FFS types liquid crystal display of the present invention comprises the following steps:S51:Step
The 1st, one first underlay substrate is provided, public electrode is formed on first underlay substrate;S52:Step 2, in the common electrical
Insulating protective layer is formed on extremely;S53:Step 3, on the insulating protective layer form pixel electrode layer;S54:Step 4, pass through
Lithographic process forms the first pixel electrode and the second pixel electrode on the pixel electrode layer, while in first pixel electricity
The perforate for exposing the public electrode is formed on the insulating protective layer between pole and the second pixel electrode;It is given below detailed
It is thin to explain.
Step 1, as shown in Figure 6 there is provided one first underlay substrate 310, form public on first underlay substrate 310
Electrode 311.
Specifically, layer of transparent can be deposited on the first underlay substrate 310 using magnetron sputtering or the method for thermal evaporation
Conductive film, forms public electrode 311.First underlay substrate 310 is preferably glass substrate.The technique for forming public electrode
It is widely used to structure in the preparation of current liquid crystal display, here is omitted.
Step 2, as shown in fig. 7, on the public electrode 311 formed insulating protective layer 312.
Specifically, it can complete shown in above-mentioned Fig. 6 on the first underlay substrate 310 of structure graph, using plasma
Strengthen chemical vapor deposition (abbreviation PECVD) method and deposit one layer of insulating protective layer, protected with forming insulation on public electrode 311
Sheath 312.
Step 3, as shown in figure 8, on the insulating protective layer 312 formed pixel electrode layer 313.
Specifically, it can complete shown in above-mentioned Fig. 7 on the first underlay substrate 310 of structure graph, using magnetron sputtering
Or the method deposition transparent conductive film of thermal evaporation, form pixel electrode layer 313.
Step 4, as shown in figure 9, forming the first pixel electrode 313a on the pixel electrode layer 313 by lithographic process
With the second pixel electrode 313b, while the insulation between the first pixel electrode 313a and the second pixel electrode 313b
The perforate 312a for exposing the public electrode 311 is formed on protective layer 312.
Specifically, on the first underlay substrate 310 of structure graph, one of photoetching can passed through shown in the above-mentioned Fig. 8 of completion
Insulating protective layer 312 between the first pixel electrode 313a and the second pixel electrode 313b is etched required figure by processing procedure
And expose the public electrode 311 and form the perforate 312a.Described lithographic process includes photoresist coating, mask, exposure
The techniques such as light, etching and photoresist lift off.By the perforate 312a, the first pixel electrode 313a, public electrode 311,
Longitudinal ion dispensing passage is formed between second pixel electrode 313b, so as to reduce the first pixel electrode 313a and the second pixel
The aggregation of ionic charge above electrode 313b.
Please also refer to Figure 10-13, wherein, Figure 10 walks for the preparation method of FFS types liquid crystal display of the present invention
Rapid 41 schematic diagram;Figure 11 is the schematic diagram of the preparation method step 42 of FFS types liquid crystal display of the present invention;Figure 12 is
The schematic diagram of the preparation method step 43 of FFS types liquid crystal display of the present invention;Figure 13 is FFS types liquid of the present invention
The schematic diagram of the preparation method step 44 of crystal display.
Figure 10-13 is the flow chart of the embodiment of FFS types FFS type liquid crystal displays preparation method one of the present invention, shown in Fig. 9
In technical scheme, step 4 is specially:
Step 41, as shown in Figure 10, one layer of photoresist formation photoresist layer of coating on the pixel electrode layer 313
1001, while providing a mask plate 1002 to carry out photoetching to the photoresist layer 1001.
Specifically, mask plate 1002, which can be used, includes lighttight first area 1002a and semi-transparent second area
1002b mask plate, such as intermediate tone mask plate (Half-toneMask, HTM);Photoetching can be carried out using UV light.
Step 42, as shown in figure 11, utilizes 1002 pairs of the mask plate photoresist layer 1001 to carry out photoetching, forms a light
Resistance layer through hole 1001a exposes the pixel electrode layer 312.
Specifically, on the first underlay substrate 310 of structure graph, mask plate can utilized shown in the above-mentioned Figure 10 of completion
Photoresist layer 1001 on 1002 pairs of pixel electrode layers 313 is exposed, developed, after thinning, the corresponding mask plate of photoresist layer 1001
1002 transmission regions form a photoresist layer through hole 1011 in the top of respective pixel electrode layer 313 and expose the pixel electrode layer
313。
Step 43, as shown in figure 12, performed etching by 1011 pairs of the photoresist layer through hole pixel electrode layer 312,
Form the first pixel electrode 313a and the second pixel electrode 313b, the first pixel electrode 313a and the second pixel electrode
A pixel electrode through hole 313c is formed between 313b and exposes the insulating protective layer 312.
Specifically, it can complete shown in above-mentioned Figure 11 on the first underlay substrate 310 of structure graph, with what is be not etched
Photoresist layer 1001 is performed etching as etching barrier layer to the pixel electrode layer 313, forms the first pixel electrode 313a
With the second pixel electrode 313b, pixel electrode through hole 313c is formed between two pixel electrodes and exposes the insulating protective layer 312.
Step 44, as shown in figure 13, by the photoresist layer through hole 1011 and pixel electrode through hole 313c to the insulation
Protective layer 312 is performed etching, and forms the perforate 312a for exposing the public electrode 311.
Specifically, it can complete shown in above-mentioned Figure 12 on the first underlay substrate 310 of structure graph, with first picture
Plain electrode 313a, the photoresist layer 1001 that is not etched on the second pixel electrode 313b and two pixel electrodes is as etch stopper
Layer, is performed etching to the insulating protective layer 312, forms the perforate 312a for exposing the public electrode 311.
The photoresist layer 1001 that step 45, stripping are not etched, forms FFS types liquid crystal display of the present invention
Tft array substrate, as shown in Figure 9.Longitudinal ion dispensing passage is formed between two pixel electrodes and public electrode, pixel is effectively reduced
The aggregation of ionic charge above electrode, solves the image retention problem of influence liquid crystal display quality.
It is preferred that, the preparation method of FFS types liquid crystal display of the present invention further comprises:S55:Step 5, institute
State and covering is formed on public electrode 311, insulating protective layer 312, the first pixel electrode 313a and the second pixel electrode 313b entirely
The alignment film 314 of public electrode 311, as shown in Figure 3.
The preparation method of FFS types liquid crystal display of the present invention, is on the basis of existing processing procedure, to pass through one of photoetching
Figure needed for processing procedure etches two pixel electrodes and its insulating protective layer between public electrode is prepared from, without increasing light
Scribe journey.Longitudinal ion dispensing passage is formed between pixel electrode and public electrode, ionic charge above pixel electrode is effectively reduced
Aggregation, solve influence liquid crystal display quality image retention problem, while liquid crystal display is effectively improved save production
Cost.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (8)
1. a kind of FFS types liquid crystal display, including tft array substrate;Characterized in that,
The tft array substrate includes:The public electrode that is arranged on the first underlay substrate, it is arranged on the public electrode
Insulating protective layer and the first pixel electrode and the second pixel electrode being arranged on the insulating protective layer;
The insulating protective layer is provided between first pixel electrode and the second pixel electrode exposes the public electrode
Perforate.
2. liquid crystal display as claimed in claim 1, it is characterised in that the perforate is by lithographic process by first picture
Insulating protective layer between plain electrode and the second pixel electrode etches required figure and exposes the public electrode and formed.
3. liquid crystal display as claimed in claim 1, it is characterised in that the tft array substrate also includes:It is arranged on described
On public electrode, insulating protective layer, the first pixel electrode and the second pixel electrode and cover the alignment film of whole public electrode.
4. liquid crystal display as claimed in claim 1, it is characterised in that pass through the perforate, first pixel electrode, public affairs
Longitudinal ion dispensing passage is formed between common electrode, the second pixel electrode, so as to reduce first pixel electrode and the second pixel
The aggregation of ionic charge above electrode.
5. a kind of preparation method of FFS types liquid crystal display, it is characterised in that the preparation method comprises the following steps:
Step 1, one first underlay substrate of offer, public electrode is formed on first underlay substrate;
Step 2, on the public electrode form insulating protective layer;
Step 3, on the insulating protective layer form pixel electrode layer;
Step 4, the first pixel electrode and the second pixel electrode formed on the pixel electrode layer by lithographic process, while
Formed on the insulating protective layer between first pixel electrode and the second pixel electrode and expose the public electrode
Perforate.
6. preparation method as claimed in claim 5, it is characterised in that the step 4 includes:
One layer of photoresist formation photoresist layer is coated with the pixel electrode layer, while providing a mask plate with to the photoresistance
Layer carries out photoetching;
Photoetching is carried out to the photoresist layer using the mask plate, a photoresist layer through hole is formed and exposes the pixel electrode layer;
The pixel electrode layer is performed etching by the photoresist layer through hole, first pixel electrode and the second pixel is formed
Electrode, forms a pixel electrode through hole between first pixel electrode and the second pixel electrode and exposes the insulation protection
Layer;
The insulating protective layer is performed etching by the photoresist layer through hole and pixel electrode through hole, formation exposes the public affairs
The perforate of common electrode;
Peel off the photoresist layer not being etched.
7. preparation method as claimed in claim 5, it is characterised in that described by the perforate formed in the step 4
Longitudinal ion dispensing passage is formed between first pixel electrode, public electrode, the second pixel electrode, so as to reduce first pixel
The aggregation of ionic charge above electrode and the second pixel electrode.
8. preparation method as claimed in claim 5, it is characterised in that the preparation method also includes:
Step 5, to form on the public electrode, insulating protective layer, the first pixel electrode and the second pixel electrode covering whole
The alignment film of public electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710630007.5A CN107290886A (en) | 2017-07-28 | 2017-07-28 | FFS type liquid crystal displays and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710630007.5A CN107290886A (en) | 2017-07-28 | 2017-07-28 | FFS type liquid crystal displays and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107290886A true CN107290886A (en) | 2017-10-24 |
Family
ID=60102470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710630007.5A Pending CN107290886A (en) | 2017-07-28 | 2017-07-28 | FFS type liquid crystal displays and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107290886A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113406804A (en) * | 2021-07-15 | 2021-09-17 | 业成科技(成都)有限公司 | Head-mounted display |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070182899A1 (en) * | 2006-02-09 | 2007-08-09 | Sanyo Epson Imaging Devices Corp. | Liquid crystal display device |
CN103488004A (en) * | 2013-09-26 | 2014-01-01 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal panel and display device |
CN104122701A (en) * | 2014-07-28 | 2014-10-29 | 深圳市华星光电技术有限公司 | Liquid crystal display panel, manufacturing method thereof and array substrate |
CN104155814A (en) * | 2014-08-29 | 2014-11-19 | 昆山龙腾光电有限公司 | Liquid crystal display device and manufacturing method thereof |
-
2017
- 2017-07-28 CN CN201710630007.5A patent/CN107290886A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070182899A1 (en) * | 2006-02-09 | 2007-08-09 | Sanyo Epson Imaging Devices Corp. | Liquid crystal display device |
CN103488004A (en) * | 2013-09-26 | 2014-01-01 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal panel and display device |
CN104122701A (en) * | 2014-07-28 | 2014-10-29 | 深圳市华星光电技术有限公司 | Liquid crystal display panel, manufacturing method thereof and array substrate |
CN104155814A (en) * | 2014-08-29 | 2014-11-19 | 昆山龙腾光电有限公司 | Liquid crystal display device and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113406804A (en) * | 2021-07-15 | 2021-09-17 | 业成科技(成都)有限公司 | Head-mounted display |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103208491B (en) | Array base palte and manufacture method, display unit | |
US9709864B2 (en) | Array substrate and its manufacturing method and display device | |
US9613986B2 (en) | Array substrate and its manufacturing method, display device | |
CN102629664B (en) | Array substrate and manufacturing method thereof, and display apparatus | |
CN105652541B (en) | The production method and liquid crystal display panel of array substrate | |
CN103489876B (en) | A kind of array base palte and preparation method thereof, display device | |
US10651204B2 (en) | Array substrate, its manufacturing method and display device | |
CN102637636A (en) | Organic thin-film transistor array substrate, method for manufacturing same and display device | |
WO2017012306A1 (en) | Method for manufacturing array substrate, array substrate, and display device | |
US8895334B2 (en) | Thin film transistor array substrate and method for manufacturing the same and electronic device | |
CN105137672B (en) | Array substrate and its manufacturing method | |
WO2013044836A1 (en) | Array substrate and manufacturing method thereof and display device | |
CN104091761B (en) | Patterned film preparation method, display substrate and display device | |
CN103454798B (en) | Array substrate and manufacturing method thereof and display device | |
CN103309105B (en) | Array base palte and preparation method thereof, display device | |
CN102789106B (en) | Organic thin film transistor array substrate, preparation method thereof and display device | |
CN103515375B (en) | Array base palte and manufacture method thereof and display unit | |
CN105957867B (en) | Array substrate motherboard and preparation method thereof, display device | |
WO2014166181A1 (en) | Thin-film transistor and manufacturing method thereof, array base plate and display apparatus | |
CN101825815A (en) | TFT (Thin Film Transistor)-LCD (Liquid Crystal Display) array baseplate and manufacturing method thereof | |
CN106019751A (en) | Array substrate and manufacturing method thereof and display device | |
CN103560114B (en) | A kind of tft array substrate and its manufacture method, display device | |
CN105070765B (en) | Thin film transistor (TFT), array substrate, display device and manufacturing method | |
US20160322404A1 (en) | Methods for producing tft array substrate and display apparatus | |
WO2013185454A1 (en) | Array substrate, fabrication method thereof, and display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171024 |
|
RJ01 | Rejection of invention patent application after publication |