CN107283075B - Improve the method for chamfered area defect in laser cutting parameter - Google Patents
Improve the method for chamfered area defect in laser cutting parameter Download PDFInfo
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- CN107283075B CN107283075B CN201710649943.0A CN201710649943A CN107283075B CN 107283075 B CN107283075 B CN 107283075B CN 201710649943 A CN201710649943 A CN 201710649943A CN 107283075 B CN107283075 B CN 107283075B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
Abstract
The present invention provides a kind of method for improving chamfered area defect in laser cutting parameter, include the following steps: to form heat-conducting buffer layer on display panel chamfered area surface, heat-conducting buffer layer includes first area and second area, and the thickness of first area heat-conducting buffer layer is less than the thickness of second area heat-conducting buffer layer；Emit laser, laser action is completely vaporized in first area, the heat-conducting buffer layer vaporization of first area and second area, the heat-conducting buffer layer of first area, the heat-conducting buffer layer part vaporization of second area, so that laser action is on the corresponding display panel in first area；Continue to emit laser, laser continues to cut the display panel, and in cutting process, the heat-conducting buffer melting layer of remaining second area is simultaneously flowed into cutting gap, and in cutting process, flows into the heat-conducting buffer layer vaporization in cutting gap；Form the display panel with chamfering.The invention has the advantages that the bad phenomenons such as the generation of thermal stress and the extension of micro-crack can be effectively improved.
Description
Technical field
The present invention relates to field of liquid crystal display more particularly to a kind of sides for improving chamfered area defect in laser cutting parameter
Method.
Background technique
Flat display apparatus has many merits such as thin fuselage, power saving, radiationless, is widely used.It is existing
Flat display apparatus mainly includes liquid crystal display device (LCD, Liquid Crystai Display) and organic light emission display dress
Set (OLED, Organic Light Emitting Display).
Organic light-emitting display device has self-luminous high brightness, wide viewing angle, high contrast, a deflection, the characteristics such as low energy consumption,
Therefore it is widely paid close attention to, and the display mode as a new generation, has started to gradually replace traditional liquid crystal display device, be not
Carry out display industry new growth point, is widely used on the electronic products such as mobile phone screen, computer monitor, full-color TV.
The function and effect of each technique can directly affect follow-up process and most in OLED display panel preparation process
The performance of finished product.
Laser chamfering technology is to carry out chamfering excision to display panel (panel) corner areas using laser cutting technique,
The needs of in terms of to meet client or product design.Figure 1A is the side signal before existing OLED display panel laser chamfering
Figure, Figure 1B are the side schematic views after existing OLED display panel laser chamfering, and Fig. 1 C is that existing OLED display panel swashs
Schematic top plan view after light chamfering, Fig. 1 D are another schematic diagrames after existing OLED display panel laser chamfering.
Figure 1A and Figure 1B is please referred to, in the chamfered area a-quadrant of OLED display panel 10, laser 11 irradiates the region, complete
It is acted at chamfering.Fig. 1 C is please referred to, is chamfered area a-quadrant in the corner regions of OLED display panel 10.With future products
Diversified demand, chamfered area (may be fallen using chamfering in irregular shape according to the customization of individual character of user demand
Angle), Fig. 1 D is please referred to, the chamfering of chamfered area a-quadrant is chamfering in irregular shape.
The shortcomings that laser chamfering technology, is, since laser energy density is very high, is also easy to produce in chamfered area a-quadrant larger
Temperature gradient, the concentration of stress caused by irregular deformation is easy to produce microdefect and gross imperfection, for example, thermal stress and
Micro-crack etc..
Fig. 1 E is heat-affected zone and non-crackle schematic diagram after laser chamfering, please refers to Fig. 1 E, in chamfered area a-quadrant,
After laser 11 irradiates, heat affected area and cracked zone will form in a certain range, as shown in B arrow in figure.Fig. 1 F is that laser falls
The microscope figure of chamfered area behind angle, please refers to Fig. 1 F, shows as indicated by the arrows in the figure, chamfering defect occurs in chamfered area.It is existing
Have under preparation process, there is no the additional process for repairing defect after chamfering, if these micro and macro defects are in subsequent system
Extension in journey may will have a direct impact on the properties of product of OLED display panel.In addition, as shown in figure iD, as future products are more
The demand of sample, chamfered area a-quadrant may use chamfering in irregular shape, and the bad phenomenon that chamfered area generates may
Cause more problems.
Therefore, a kind of new method is needed, defect present in above-mentioned laser cutting parameter is overcome.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of sides of chamfered area defect in improvement laser cutting parameter
Method can be effectively improved the bad phenomenons such as the generation of thermal stress and the extension of micro-crack.
To solve the above-mentioned problems, the present invention provides a kind of sides of chamfered area defect in improvement laser cutting parameter
Method includes the following steps: that, in one heat-conducting buffer layer of the surface of the chamfered area of display panel formation, the heat-conducting buffer layer includes
First area and the second area that the first area two sides are arranged in, the thickness of the heat-conducting buffer layer of the first area are less than
The thickness of the heat-conducting buffer layer of the second area；Emit laser, the laser action is in the first area, firstth area
The vaporization of the heat-conducting buffer layer of domain and the second area, the heat-conducting buffer layer of the first area completely vaporize, secondth area
The heat-conducting buffer layer part in domain vaporizes, so that the laser action is on the corresponding display panel in first area；Continue transmitting to swash
Light, the laser continues to cut the display panel, and in cutting process, the heat-conducting buffer layer of the remaining second area melts
Change and flow into cutting gap, and in cutting process, flows into the heat-conducting buffer layer vaporization in cutting gap；Being formed has chamfering
Display panel.
In one embodiment, the heat-conducting buffer layer is made of organic material and metal material.
In one embodiment, the organic material is selected from acid imide, acrylic acid, and one in polyethylene and polyacrylate
Kind is several.
In one embodiment, the metal material is selected from one of Mo, Ta, Ti, Fe, Ni, Cu, Al and Nb or several
Kind.
In one embodiment, the heat-conducting buffer layer under the effect of the laser, absorbs the energy of the laser, first melts again
Vaporization.
In one embodiment, the width of the heat-conducting buffer layer is greater than the width of the chamfered area.
In one embodiment, it in the one heat-conducting buffer layer of formation on the surface of the chamfered area of display panel the step of, adopts
The heat-conducting buffer layer is formed with the technique of high temperature coating, chemical vapor deposition, physical vapour deposition (PVD) and sputtering.
It is an advantage of the current invention that preparing heat-conducting buffer layer in chamfered area, heat-conducting buffer layer material easily absorbs heat, avoids
Biggish temperature gradient is formed inside display panel, can guarantee effectively to reduce display panel while efficiently accomplishing chamfering
The generation of microdefect and gross imperfection, to be effectively improved the bad phenomenons such as the generation of thermal stress and the extension of micro-crack.
It is a further advantage of the present invention that the heat absorption vaporization of heat-conducting buffer layer material does not need subsequent additional cleaning process.
Detailed description of the invention
Figure 1A is the side schematic view before existing OLED display panel laser chamfering；
Figure 1B is the side schematic view after existing OLED display panel laser chamfering；
Fig. 1 C is the schematic top plan view after existing OLED display panel laser chamfering；
Fig. 1 D is another schematic diagram after existing OLED display panel laser chamfering；
Fig. 1 E is heat-affected zone and non-crackle schematic diagram after laser chamfering；
Fig. 1 F is the microscope figure of chamfered area after laser chamfering；
Fig. 2 is the step schematic diagram that the present invention improves the method for chamfered area defect in laser cutting parameter；
Fig. 3 A~Fig. 3 D is the process flow chart that the present invention improves the method for chamfered area defect in laser cutting parameter.
Specific embodiment
With reference to the accompanying drawing to it is provided by the invention improvement laser cutting parameter in chamfered area defect method it is specific
Embodiment elaborates.
In the prior art, Fig. 1 E is please referred to, in chamfered area a-quadrant, if by the 11 direct irradiation chamfered area of laser
Panel surface can then will form heat affected area and cracked zone in a certain range, be easy to produce microdefect and macroscopic view lacks
It falls into.In consideration of it, the present invention provides a kind of method for improving chamfered area defect in laser cutting parameter, above-mentioned lack can be overcome
It falls into, hence it is evident that improve chamfered area defect in laser cutting parameter.
Fig. 2 is the step schematic diagram that the present invention improves the method for chamfered area defect in laser cutting parameter, Fig. 3 A~figure
3D is the process flow chart that the present invention improves the method for chamfered area defect in laser cutting parameter.Wherein, for a clear description
The present invention improves the technical solution of the method for chamfered area defect in laser cutting parameter, exaggerates the model of chamfered area a-quadrant
It encloses, in practice, the range very little of chamfered area a-quadrant.
Fig. 3 A and step S20 is please referred to, forms a heat-conducting buffer layer on the surface of the chamfered area a-quadrant of display panel 20
21。
In this step, the method for forming the heat-conducting buffer layer includes but is not limited to high temperature coating, chemical vapor deposition
(CVD), physical vapour deposition (PVD) (PVD) and the film-forming process of sputtering (Sputter).The heat-conducting buffer layer 21 by organic material and
Metal material is constituted.Wherein, the organic material includes but is not limited to acid imide, acrylic acid, in polyethylene and polyacrylate
One or more.The metal material includes but is not limited to one or more of Mo, Ta, Ti, Fe, Ni, Cu, Al and Nb.
The material of the heat-conducting buffer layer 21 has good heat absorption capacity and the capacity of heat transmission, heat-conducting buffer described in laser action process
The material of layer 21 can first melt to be vaporized afterwards, and the material filming of the heat-conducting buffer layer 21 is good, during the preparation process will not be to aobvious
Show that panel 20 has a adverse impact.
The heat-conducting buffer layer 21 includes first area 211 and the second area that 211 two sides of first area are arranged in
212.The thickness of the heat-conducting buffer layer of the first area 211 is less than the thickness of the heat-conducting buffer layer of the second area 212, i.e.,
The heat-conducting buffer layer 21 is in the structure of intermediate thin both sides thickness.It is used when the specific thickness of the heat-conducting buffer layer 21 is with cutting
Laser type and cut chamfering type it is related.
In embodiment, the width of the heat-conducting buffer layer 21 is greater than the width of the chamfered area a-quadrant, i.e., described to lead
The edge of Heat buffered layer 21 exceeds the edge of the chamfered area a-quadrant, to provide enough conduction energy in the subsequent process
Heat-conducting buffer layer.
In one embodiment, the display panel 20 includes flexible substrate layer (not indicating in attached drawing), is arranged described soft
The organic luminous layer (not indicated in attached drawing) of property substrate layer surface, the thin-film encapsulation layer that the organic light emission layer surface is set
(TFE) polarizing layer (POL) (not indicating in attached drawing) of the thin-film package layer surface (is not indicated) and is arranged in attached drawing.It is described
Heat-conducting buffer layer 21 is arranged in the polarisation layer surface.Wherein, the flexible substrate layer, organic luminous layer, thin-film encapsulation layer and
Polarizing layer is the conventional structure of OLED display panel, and details are not described herein.
Fig. 3 B and step S21 is please referred to, laser 22 is emitted.The laser 22 acts on described the first of heat-conducting buffer layer 21
The heat-conducting buffer layer 21 in region 211, the first area 211 vaporizes, so that the laser 22 acts on and the first area
On 211 corresponding display panels 20.The laser 22 can be emitted by laser generator, in existing laser cutting parameter
Laser light emitting method is identical.
Further, when laser 22 is acted on the heat-conducting buffer layer 21 of the first area 211, first area 211 is led
Heat buffered layer 21 absorbs the energy of laser 22, and the heat-conducting buffer layer 21 of first area 211 first melts, and re-vaporizes, exposes display
Panel 20, so that laser 22 acts directly on the display panel 20.After laser 22 absorbs energy by heat-conducting buffer layer 21, swash
22 energy of light is cut in.The laser 22 for the laser energy effectively cut down remakes on display panel 20, the advantage is that, can
The energy of laser 22 is effectively relieved without cutting down the adverse effect caused by acting directly on display panel.
In laser action, the heat-conducting buffer layer 21 of the heat-conducting buffer layer 21 of second area 212 and first area 211 is simultaneously
Melting, still, since the thickness of the heat-conducting buffer layer 21 of the first area 211 is less than the thermally conductive of the second area 212
The thickness of buffer layer 21, then after the heat-conducting buffer layer 21 in first area 211 melts and vaporizes, the thermally conductive of second area 212 is delayed
Layer is rushed there are also residue, i.e., has the heat-conducting buffer layer of part second area 212 not melt and vaporize in this step, claims below
The heat-conducting buffer layer 21 for the remaining second area 212.
Fig. 3 C and step S22 is please referred to, continues to emit laser 22, the laser 22 continues to cut the display panel 20.
In cutting process, the heat-conducting buffer melting layer of the remaining second area 212 is simultaneously flowed into cutting gap 23, and is cutting
In the process, the heat-conducting buffer layer 21 flowed into cutting gap 23 vaporizes.
In cutting process, the heat-conducting buffer layer of second area 212 absorbs the energy of laser 22, cuts down the laser 22
Energy.Melt after the energy of the heat-conducting buffer layer absorption laser 22 of second area 212, the heat-conducting buffer layer 21 of melting state flows into
In cutting gap 23, in cutting gap 23, the heat-conducting buffer layer 21 of melting state continues to absorb the energy of laser 22, cuts down institute
State the energy of laser 22.It is vaporized after the energy of the absorption laser 22 of heat-conducting buffer layer 21 of melting state.It is described aobvious being cut by laser
During showing panel 20, heat-conducting buffer layer 21 is absorbing always the energy of laser 22, melts re-vaporization, can effectively pass in this way
Heat of laser during 20 internal action of display panel is led, avoids forming biggish temperature ladder inside display panel 20
Team generates the chamferings defect such as thermal stress and micro-crack.
Fig. 3 D and step S23 is please referred to, the display panel 20 with chamfering 24 is formed.Make in the assistance of heat-conducting buffer layer 21
Under, after being cut by laser the display panel, the display panel 20 with chamfering 24 is formed, is not produced in chamfered area a-quadrant
The chamferings defect such as heat stress and micro-crack.Since heat-conducting buffer layer 21 can vaporize after the energy for absorbing laser, because
This does not need to be further added by additional cleaning step removal heat-conducting buffer layer, work after completing laser cutting and forming the technique of chamfering
Skill is simple, and cost is not high.
The method that the present invention improves chamfered area defect in laser cutting parameter prepares heat-conducting buffer layer in chamfered area, leads
Heat buffered layer material easily absorbs heat, and can absorb the energy of laser, then is cut in the laser cutting display panel of energy, Ke Yi
Guarantee effectively reduces the generation of display panel microdefect and gross imperfection while efficiently accomplishing chamfering, to be effectively improved
The bad phenomenons such as the generation of thermal stress and the extension of micro-crack.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (7)
1. a kind of method for improving chamfered area defect in laser cutting parameter, which comprises the steps of:
A heat-conducting buffer layer is formed on the surface of the chamfered area of display panel, the heat-conducting buffer layer includes first area and sets
The second area in the first area two sides is set, the thickness of the heat-conducting buffer layer of the first area is less than the second area
Heat-conducting buffer layer thickness；
Emit laser, the laser action is in the first area, the heat-conducting buffer of the first area and the second area
Layer vaporization, the heat-conducting buffer layer of the first area completely vaporize, the heat-conducting buffer layer part vaporization of the second area, so that
The laser action is on the corresponding display panel in first area；
Continuing to emit laser, the laser continues to cut the display panel, in cutting process, the remaining second area
Heat-conducting buffer melting layer and flow into cutting gap, and in cutting process, flow into the heat-conducting buffer layer vapour in cutting gap
Change；
Form the display panel with chamfering.
2. the method according to claim 1 for improving chamfered area defect in laser cutting parameter, which is characterized in that described
Heat-conducting buffer layer is made of organic material and metal material.
3. the method according to claim 2 for improving chamfered area defect in laser cutting parameter, which is characterized in that described
Organic material is selected from acid imide, acrylic acid, one or more of polyethylene and polyacrylate.
4. the method according to claim 2 for improving chamfered area defect in laser cutting parameter, which is characterized in that described
Metal material is selected from one or more of Mo, Ta, Ti, Fe, Ni, Cu, Al and Nb.
5. the method according to claim 1 for improving chamfered area defect in laser cutting parameter, which is characterized in that described
Heat-conducting buffer layer under the effect of the laser, absorbs the energy of the laser, first melts re-vaporization.
6. the method according to claim 1 for improving chamfered area defect in laser cutting parameter, which is characterized in that described
The width of heat-conducting buffer layer is greater than the width of the chamfered area.
7. the method according to claim 1 for improving chamfered area defect in laser cutting parameter, which is characterized in that aobvious
In the step of showing the one heat-conducting buffer layer of formation on the surface of the chamfered area of panel, using high temperature coating, chemical vapor deposition, object
The technique of physical vapor deposition forms the heat-conducting buffer layer.
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| CN201710649943.0A CN107283075B (en) | 2017-08-02 | 2017-08-02 | Improve the method for chamfered area defect in laser cutting parameter |
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| CN201710649943.0A CN107283075B (en) | 2017-08-02 | 2017-08-02 | Improve the method for chamfered area defect in laser cutting parameter |
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| CN107283075B true CN107283075B (en) | 2019-01-15 |
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| CN108526721B (en) * | 2018-06-12 | 2020-10-13 | 武汉华星光电半导体显示技术有限公司 | Method and device for improving defect of chamfer area in laser cutting process |
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| CN102531371A (en) * | 2011-12-19 | 2012-07-04 | 深圳市木森科技有限公司 | Method for cutting glass by laser |
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| CN106328680A (en) * | 2016-08-25 | 2017-01-11 | 昆山国显光电有限公司 | Laser seal heat conduction jig of organic light-emitting display apparatus and laser seal method |
| CN106799548A (en) * | 2017-02-06 | 2017-06-06 | 京东方科技集团股份有限公司 | The method of diaphragm, laser cutting |
| CN106932944A (en) * | 2017-04-28 | 2017-07-07 | 上海天马有机发光显示技术有限公司 | A kind of display panel and preparation method thereof |
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2017
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0090565A2 (en) * | 1982-03-30 | 1983-10-05 | Fujitsu Limited | Process for selectively cutting an electrical conductive layer by irradiation with an energy beam |
| JP3797068B2 (en) * | 2000-07-10 | 2006-07-12 | セイコーエプソン株式会社 | Laser microfabrication method |
| CN102531371A (en) * | 2011-12-19 | 2012-07-04 | 深圳市木森科技有限公司 | Method for cutting glass by laser |
| CN104741793A (en) * | 2013-12-27 | 2015-07-01 | 三星钻石工业股份有限公司 | Method for chamfering glass substrate and laser processing apparatus |
| CN106129088A (en) * | 2016-07-21 | 2016-11-16 | 京东方科技集团股份有限公司 | A kind of display floater and preparation method, display device |
| CN106328680A (en) * | 2016-08-25 | 2017-01-11 | 昆山国显光电有限公司 | Laser seal heat conduction jig of organic light-emitting display apparatus and laser seal method |
| CN106799548A (en) * | 2017-02-06 | 2017-06-06 | 京东方科技集团股份有限公司 | The method of diaphragm, laser cutting |
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