KR20110110978A - Metal reflecting layer for efficiency improvement of laser lift-off process - Google Patents
Metal reflecting layer for efficiency improvement of laser lift-off process Download PDFInfo
- Publication number
- KR20110110978A KR20110110978A KR1020100030320A KR20100030320A KR20110110978A KR 20110110978 A KR20110110978 A KR 20110110978A KR 1020100030320 A KR1020100030320 A KR 1020100030320A KR 20100030320 A KR20100030320 A KR 20100030320A KR 20110110978 A KR20110110978 A KR 20110110978A
- Authority
- KR
- South Korea
- Prior art keywords
- reflective layer
- laser lift
- buffer layer
- laser
- metal reflective
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 title abstract description 28
- 239000002184 metal Substances 0.000 title abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000011521 glass Substances 0.000 abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- 230000005693 optoelectronics Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 42
- 238000005516 engineering process Methods 0.000 description 4
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000009103 reabsorption Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002939 poly(N,N-dimethylacrylamides) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a metal reflective layer material and process method capable of realizing effective peeling through a metal reflective layer formed on top of a buffer layer for peeling an optoelectronic device fabricated on a glass or sapphire substrate from a substrate.
Description
The present invention relates to a metal reflective layer material and process method capable of realizing effective peeling through a metal reflective layer formed on top of a buffer layer for peeling an optoelectronic device fabricated on a glass or sapphire substrate from a substrate.
The laser lift-off process is a process for peeling an optoelectronic device fabricated on a glass or sapphire substrate from the substrate, and the laser absorption of the buffer layer is a very important factor for the purpose of peeling a large number of devices at once with a single laser output.
The conventional laser lift-off process of the invention described in Korean Patent Application No. 10-2002-23218 and the invention described in Korean Patent Application No. 10-2005-10254 is performed by irradiating a laser of high power to a nitride buffer layer deposited on a sapphire substrate. The process was carried out. The laser of high power is not absorbed completely by the buffer layer, but radiates to the surroundings, so that the peeling efficiency is lowered.
Therefore, an object of the present invention is a process for peeling a photovoltaic device fabricated on a glass or sapphire substrate from a substrate during a laser lift-off process to absorb a high power laser in the buffer layer as much as possible to peel a large amount of devices at once. To provide.
Another object of the present invention is to provide a method of improving process efficiency by reflecting a laser beam through the buffer layer and inducing reabsorption into the buffer layer by depositing a highly reflective metal on the buffer layer.
In the method of manufacturing a metal reflective layer for improving the efficiency of the laser lift-off process according to the present invention, after forming a buffer layer of an amorphous or crystalline structure on a glass substrate, a metal reflective layer is formed on the buffer layer and a photoelectric device is formed on the laser layer to laser the same. A photoelectric device is manufactured by peeling from a substrate through a lift-off process. Preferably, the metal reflective layer is fabricated through a sputter process using a metal target such as Al, Ag, Cu or the like and applied to the laser lift-off process.
The method of manufacturing the metal reflective layer for improving the efficiency of the laser lift-off process according to the present invention provides a metal reflective layer material technology and a process technology for improving the efficiency of the laser lift-off process for manufacturing a high-quality photoelectric device. It increases mass productivity and stability, which enables high quality photoelectric devices.
1 is a view for explaining a process according to an embodiment of the present invention.
The laser lift-off process is a process for peeling a photoelectric device fabricated on a glass or sapphire substrate from a substrate, and the laser absorption of the buffer layer is a very important factor for the purpose of peeling a large amount of devices at once with a single laser output. Therefore, in the present invention, by depositing a metal having high reflectivity on the buffer layer, the laser beam passing through the buffer layer is reflected and reabsorption into the buffer layer is improved, thereby improving process efficiency.
Preferably, the metal reflective layer is fabricated through a sputter process using a metal target of Al, Ag, Cu, Au, Ti, Mo, Cr, Nb, Ni, Ta, Zr and applied to the laser lift-off process.
Preferably, the metal reflective layer is manufactured through a vapor deposition process using a metal target of Al, Ag, Cu, Au, Ti, Mo, Cr, Nb, Ni, Ta, Zr and applied to the laser lift-off process.
Preferably, a reflective layer is prepared on the buffer layer having a Ga 2-x O 3-y N composition or a GaN composition.
Preferably, the thickness of the reflective layer is characterized in that between 10nm to 5um.
Preferably, a laser lift off process is performed using F 2 , ArF, KrCl, KrF, XeCl, XeF lasers.
After forming a buffer layer of an amorphous or crystalline structure on a glass substrate, a metal reflective layer is formed on the buffer layer, and an optoelectronic device is formed thereon, and the optoelectronic device is fabricated by peeling it from the substrate through a laser lift-off process. At this time, since the metal reflective layer is formed of a metal having excellent reflectivity at most wavelengths, the metal reflective layer is not significantly influenced by the thickness of the reflective layer and thus has excellent price competitiveness.
Application Field
-Metal reflective layers can be provided for all existing laser lift-off processes.
-Metal reflective layer for laser lift-off process during high-quality flexible TFT fabrication, stripping and transfer process application
-Metal reflective layer for laser lift-off process in manufacturing high-quality flexible solar cell, stripping and transfer process application
-Metal reflective layer for laser lift-off process in high quality LED fabrication, stripping and transfer process application
-Metal reflective layer and transfer process for peeling process of 3D structure
This technology is a breakthrough technology that can be applied to any device manufacturing process that uses the laser lift-off process. In addition, if the buffer layer manufactured through sputtering is used, it can be applied without additional equipment replacement, and thus the prospect of commercialization is very high.
10: metal reflective layer
11: transistor pattern
20: buffer layer
30: transparent aluminum oxide (Transparent AL 2 O 3 )
40: PDMA polymer adhesive layer
50: supporting substrate
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100030320A KR20110110978A (en) | 2010-04-02 | 2010-04-02 | Metal reflecting layer for efficiency improvement of laser lift-off process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100030320A KR20110110978A (en) | 2010-04-02 | 2010-04-02 | Metal reflecting layer for efficiency improvement of laser lift-off process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110110978A true KR20110110978A (en) | 2011-10-10 |
Family
ID=45027276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100030320A KR20110110978A (en) | 2010-04-02 | 2010-04-02 | Metal reflecting layer for efficiency improvement of laser lift-off process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20110110978A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474583A (en) * | 2013-09-24 | 2013-12-25 | 京东方科技集团股份有限公司 | Flexible display substrate, manufacturing method thereof and flexible display device |
| CN104064685A (en) * | 2014-05-19 | 2014-09-24 | 京东方科技集团股份有限公司 | Flexible display substrate as well a manufacturing method thereof and flexible display device |
-
2010
- 2010-04-02 KR KR1020100030320A patent/KR20110110978A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474583A (en) * | 2013-09-24 | 2013-12-25 | 京东方科技集团股份有限公司 | Flexible display substrate, manufacturing method thereof and flexible display device |
| CN106410027A (en) * | 2013-09-24 | 2017-02-15 | 京东方科技集团股份有限公司 | Flexible display substrate, fabrication method thereof and flexible display device |
| CN104064685A (en) * | 2014-05-19 | 2014-09-24 | 京东方科技集团股份有限公司 | Flexible display substrate as well a manufacturing method thereof and flexible display device |
| WO2015176487A1 (en) * | 2014-05-19 | 2015-11-26 | 京东方科技集团股份有限公司 | Flexible display substrate and manufacturing method therefor, and flexible display device |
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| WITN | Withdrawal due to no request for examination |