CN107275520B - 激光蚀刻装置及利用此的激光蚀刻方法 - Google Patents
激光蚀刻装置及利用此的激光蚀刻方法 Download PDFInfo
- Publication number
- CN107275520B CN107275520B CN201710217679.3A CN201710217679A CN107275520B CN 107275520 B CN107275520 B CN 107275520B CN 201710217679 A CN201710217679 A CN 201710217679A CN 107275520 B CN107275520 B CN 107275520B
- Authority
- CN
- China
- Prior art keywords
- film
- laser
- protective film
- roller
- laser etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010329 laser etching Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000001681 protective effect Effects 0.000 claims abstract description 113
- 239000000428 dust Substances 0.000 claims abstract description 51
- 239000002245 particle Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 255
- 239000010409 thin film Substances 0.000 claims description 26
- 238000003475 lamination Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 230000005484 gravity Effects 0.000 claims description 6
- 238000011084 recovery Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 238000012423 maintenance Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WMAXWOOEPJQXEB-UHFFFAOYSA-N 2-phenyl-5-(4-phenylphenyl)-1,3,4-oxadiazole Chemical compound C1=CC=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 WMAXWOOEPJQXEB-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160041439A KR102519412B1 (ko) | 2016-04-05 | 2016-04-05 | 레이저 식각 장치 및 이를 이용한 레이저 식각 방법 |
| KR10-2016-0041439 | 2016-04-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107275520A CN107275520A (zh) | 2017-10-20 |
| CN107275520B true CN107275520B (zh) | 2021-02-26 |
Family
ID=60073754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710217679.3A Active CN107275520B (zh) | 2016-04-05 | 2017-04-05 | 激光蚀刻装置及利用此的激光蚀刻方法 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102519412B1 (ko) |
| CN (1) | CN107275520B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200120790A (ko) * | 2019-04-11 | 2020-10-22 | 삼성디스플레이 주식회사 | 레이저 장치 |
| CN117080303A (zh) * | 2023-08-22 | 2023-11-17 | 新源劲吾(北京)科技有限公司 | 一种彩色光伏组件生产设备及使用方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002035709A (ja) | 2000-07-25 | 2002-02-05 | Japan Steel Works Ltd:The | レーザクリーニング処理におけるパーティクルの捕集装置及び捕集方法 |
| CN201677140U (zh) * | 2009-09-29 | 2010-12-22 | 深圳市沃尔核材股份有限公司 | 一种全自动激光切割机 |
| CN202162500U (zh) * | 2011-07-13 | 2012-03-14 | 李俊豪 | 镭射加工机台 |
| CN202984920U (zh) * | 2012-12-07 | 2013-06-12 | 江苏三环实业股份有限公司 | 一种激光切边机 |
| KR101561995B1 (ko) * | 2013-12-20 | 2015-10-20 | 한국생산기술연구원 | 희토류가 함유된 나노파티클 포집장치 |
| CN203936519U (zh) * | 2014-05-30 | 2014-11-12 | 宁德新能源科技有限公司 | 锂离子电池极片涂层清洗装置 |
-
2016
- 2016-04-05 KR KR1020160041439A patent/KR102519412B1/ko active IP Right Grant
-
2017
- 2017-04-05 CN CN201710217679.3A patent/CN107275520B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102519412B1 (ko) | 2023-04-10 |
| KR20170115155A (ko) | 2017-10-17 |
| CN107275520A (zh) | 2017-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102606823B1 (ko) | 레이저 식각 장치 및 이를 이용한 레이저 식각 방법 | |
| JP5331264B2 (ja) | 蒸着装置及び蒸着方法 | |
| US10927443B2 (en) | Vapor deposition mask, method for manufacturing vapor deposition mask, vapor deposition method, and method for manufacturing organic el display device | |
| JP5285187B2 (ja) | 蒸着装置及び蒸着方法 | |
| US9580791B2 (en) | Vapor deposition mask, and manufacturing method and manufacturing device for organic EL element using vapor deposition mask | |
| US8182610B2 (en) | Cleaning equipment and cleaning method of deposition mask | |
| CN107275520B (zh) | 激光蚀刻装置及利用此的激光蚀刻方法 | |
| JP6087267B2 (ja) | 蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法 | |
| US20200144556A1 (en) | Organic layer deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same | |
| KR20060020031A (ko) | 레이저 열전사 장치 | |
| KR102005665B1 (ko) | 조명용 유기발광소자 제조 방법 및 그 제조 장치 | |
| KR101537287B1 (ko) | 식각장치 | |
| KR101514208B1 (ko) | 레이저 식각장치 및 그 방법 | |
| KR101973286B1 (ko) | 조명용 유기발광소자 제조 방법 및 그 제조 장치 | |
| JP2011183249A (ja) | 蒸着マスクの洗浄装置 | |
| KR101712483B1 (ko) | 파티클 포집모듈 및 그를 구비하는 레이저 식각장치 | |
| KR101508309B1 (ko) | 기판과 마스크의 어태치 장치 및 방법 | |
| KR20140118004A (ko) | 도너 기판 제조방법 | |
| CN113574695B (zh) | 照明用有机发光元件制造方法及其制造装置 | |
| KR102036523B1 (ko) | 기판 증착장치 | |
| KR102063986B1 (ko) | 유기발광 다이오드 패널의 제조방법 | |
| KR100786290B1 (ko) | 유기전계발광표시장치의 제조를 위한 레이저 열전사 방법 | |
| KR20150110878A (ko) | 합착장치 | |
| KR20060068677A (ko) | 유기 전계발광표시소자의 제조장치 및 방법 | |
| KR20060020045A (ko) | 유기전계발광표시장치의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |