CN107275246B - The evaluation method of the measuring method and cell piece printing quality of solar battery pair grid shading rate correction factor and secondary grid shading rate - Google Patents
The evaluation method of the measuring method and cell piece printing quality of solar battery pair grid shading rate correction factor and secondary grid shading rate Download PDFInfo
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- CN107275246B CN107275246B CN201710544452.XA CN201710544452A CN107275246B CN 107275246 B CN107275246 B CN 107275246B CN 201710544452 A CN201710544452 A CN 201710544452A CN 107275246 B CN107275246 B CN 107275246B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Abstract
The present invention provides the evaluation methods of the measuring method and cell piece printing quality of solar battery pair grid shading rate correction factor and secondary grid shading rate, it is related to manufacture of solar cells manufacturing technology field, the measuring method of solar battery pair grid shading rate correction factor, the following steps are included: step a): choosing and be no less than 3 groups of cell pieces, the secondary grizzly bar number between different group cell pieces is different；Calculate separately the average short circuit current density J of every group of cell pieceSC；Step b): the main grid geometry shading rate f of every group of cell piece is calculatedbusbarWith secondary grid geometry shading rate ffinger；Step c): with ffingerFor abscissa, with JSCIt draws discrete figure for ordinate and does linear fit and obtain straight line, the slope y=-J of the straight lineLK, the intercept D=J of the straight lineL·(1‑fbusbar), pass through discrete figure and the adjusted coefficient K that secondary grid shading rate is calculated.
Description
Technical field
The present invention relates to manufacture of solar cells manufacturing technology fields, more particularly, to a kind of solar battery pair grid shading
The evaluation method of the measuring method and cell piece printing quality of rate correction factor and secondary grid shading rate.
Background technique
Front electrode of solar battery is the electronics for collecting battery surface spilling under illumination, and they are transported to end
The metal structure of terminal circuit.Conventional electrode structure is mostly comb electrode, including 2-5 main grid and perpendicular to its over one hundred pair
Grid, by way of silk-screen printing, by silver paste by screen painting to cell piece, when printing, scraper squeezes silver paste and passes through net
The gap of version is adhered on cell piece, forms good Ohmic contact with silicon wafer through sintering.
Cell piece in use, silver grating line covering part will keep the sun off completely, light loss is caused, so in silk screen
When printing, big grid line depth-width ratio is a target of silk-screen process.In fact, the electrode cross-section that silk-screen printing is formed is not
The rectangle of standard, but the similar normal distribution curve tee section as shown in Fig. 1.For secondary grid, silver grating line connects with silicon
The place of touching is most wide, more narrower at a distance apart from silicon.The coverage area of silver is as shown in bc sections, and the silicon material of this part is because that can not contact light
According to and generating unit light splitting loss, cell piece area corresponding to secondary grid bc sections of width are the geometry shading surface of usual actual measurement
Product, the geometry shading-area of this part and the ratio of cell piece area are geometry shading rate.
But geometry shading rate cannot be lost entirely as battery shading, and due to the special cross-section shape of secondary grid, secondary grid bc
Light above segment limit is simultaneously non-fully wasted, and part light is incident on ab sections or cd sections of exposed silicon material after being reflected by grid line
Place, and then be predominantly absorbed.This part absorbed light after reflection can fill up part shading loss, the practical screening of shown pair grid
Light rate (hereinafter referred to as secondary grid shading rate) and non-geometric shading rate, but had a very large relationship with the cross sectional shape of secondary grid, by
Slurry, silk screen tension, aperture, scraper dynamics etc. influence.It is thus necessary to determine that secondary grid shading rate correction factor corrects pair
Grid shading rate, to approach truth.
In current industry, there are no about the test method for testing secondary grid shading rate, belong to industry blank.
In view of this, the present invention is specifically proposed.
Summary of the invention
The first object of the present invention is to provide a kind of measuring method of solar battery pair grid shading rate correction factor, sharp
It can be derived that secondary grid shading rate correction factor with the measuring method, to make evaluation to the properity of thin grid.
The second object of the present invention is to provide a kind of measuring method of solar battery pair grid shading rate, utilizes the measurement
Method can be derived that secondary grid shading rate, to make evaluation to the shape and structure of thin grid.
The third object of the present invention is to provide a kind of evaluation method of cell piece printing quality, utilizes the evaluation method energy
It is enough to judge whether the printing quality of cell piece meets the requirements in time, and printing technology and halftone are made in time according to evaluation result
Adjustment.
In order to realize above-mentioned purpose of the invention, the following technical scheme is adopted:
A kind of measuring method of solar battery pair grid shading rate correction factor, comprising the following steps:
Step a): choosing and be no less than 3 groups of cell pieces, and the radical of the secondary grid between different group cell pieces is different；It counts respectively
Calculate the average short circuit current density J of every group of cell pieceSC, main grid geometry shading rate fbusbarAverage value and secondary grid geometry shading rate
ffingerAverage value；
Step b): with ffingerFor abscissa, with JSCIt draws discrete figure for ordinate and does linear fit and obtain straight line, institute
It obtains line correspondences formula (1):
Jsc=JL·(1-fbusbar-K·ffinger), formula (1)；
Wherein, JLFor the wide raw current density of non-shading region, K is the correction factor of secondary grid shading rate；
The slope y and intercept D of straight line are obtained according to discrete figure, according to formula (2) and formula (3), secondary grid can be calculated and hide
The adjusted coefficient K of light rate:
The slope y=-J of the straight lineLK, formula (2)；
The intercept D=J of the straight lineL·(1-fbusbar), formula (3).
Further, in the step a), the short-circuit current density difference between the cell piece is controlled in 30mA/cm2
Within.
Further, in the step a), the group number of the cell piece of selection is no less than 4 groups.
Further, in the step a), the quantity of every group of cell piece is no less than 20.
Further, in the step a), the secondary grid quantity of the cell piece is no less than 60.
Further, in the step a), the difference of the secondary grid quantity between the difference group cell piece is greater than 10.
Further, the cell piece preparation process the following steps are included: silicon wafer through making herbs into wool, diffusion, etching, PECVD
Deposition, silk-screen printing and sintering obtain the cell piece.
Further, the resistivity contrasts of the silicon wafer control within the scope of ± 0.2 Ω cm.
A kind of measuring method of solar battery pair grid shading rate corrects system according to above-mentioned solar battery pair grid shading rate
Several measuring methods obtains secondary grid shading rate adjusted coefficient K, later according to solar battery pair grid shading rate f=KffingerIt asks
Obtain secondary grid shading rate, wherein ffingerSecondary grid geometry shading rate.
A kind of evaluation method of cell piece printing quality, according to the survey of above-mentioned solar battery pair grid shading rate correction factor
The method of determining obtains adjusted coefficient K, and K value is less than or equal to 0.8, determines that printing quality is qualified, and K value is greater than 0.8, determines printing quality not
It is qualified.
Compared with the prior art, the invention has the following beneficial effects:
1) in current industry, there are no people to propose that specific measurements determination method, the present invention proposed to secondary grid shading rate
Measuring method filled up the blank of this respect.
2) present invention is no less than 3 groups of cell piece by choosing, and the secondary grid radical of the electrode pattern of each group cell piece is different,
To secondary grid geometry shading rate ffingerDifference, and then according to short-circuit current density JSCWith secondary grid geometry shading rate ffingerPass
System, to calculate the value of adjusted coefficient K.
The present invention passes through the adjusted coefficient K for calculating secondary grid shading rate, so as to calculate secondary grid shading rate.The shape of secondary grid
Structure has larger impact to the adjusted coefficient K of secondary grid shading rate, therefore, can not according to the adjusted coefficient K of secondary grid shading rate
The structure of disconnected optimization design pair grid, so that the electrical property of cell piece be made to be further improved.Pass through repairing for secondary grid shading rate
The value of secondary grid shading rate can be calculated in positive coefficient K and secondary grid geometry shading rate, so as to the electricity to different secondary grid structures
Pond piece carries out performance comparison, and then can be used as an important evidence of evaluation battery piece performance.
3) shape and structure of secondary grid is influenced by silk-screen printing technique, different scraper dynamics, speed, halftone and cell piece
Distance will affect the shape of electrode, to influence the adjusted coefficient K of secondary grid shading rate, and then influence the secondary grid shading of cell piece
Rate.By the value of the available secondary grid shading rate of measurement K and geometry shading rate, therefore the adjusted coefficient K of secondary grid shading rate can be with
An important evidence as adjustment silk-screen printing technique.
4) viscosity of slurry will affect the electrode shape printed out, to influence the secondary grid shading rate of cell piece.Secondary grid
The adjusted coefficient K of shading rate can help to adjust the proportion of slurry and adjust slurry viscosity, to obtain small secondary grid shading rate.
5) in silk-screen printing halftone with the increase of number of use, the line width of secondary grid of printing can gradually increase, highly by
Gradually reduce.
Therefore, monitoring K value can monitor the silk-screen printing quality of cell piece in process of production, and K is printed closer to 1
Quality it is poorer.When K is less than or equal to 0.8, printing quality is qualified, can continue printing technology；When K is greater than 0.8, printing quality
It measures unqualified, needs to adjust silk-screen printing technique or replace the halftone.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the cross section of the thin grid of cell piece and the index path on thin grid surface；
Fig. 2 is short circuit current density Jsc and secondary grid geometry shading rate f in embodiment 1fingerLinear Fit Chart；
Fig. 3 is short circuit current density Jsc and secondary grid geometry shading rate f in embodiment 2fingerLinear Fit Chart；
Fig. 4 is 3 short circuit density Jsc of embodiment and secondary grid geometry shading rate ffingerLinear Fit Chart；
Fig. 5 is 4 short circuit density Jsc of embodiment and secondary grid geometry shading rate ffingerLinear Fit Chart；
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood as the case may be
Concrete meaning in the present invention.
One aspect of the present invention provides a kind of measuring method of solar battery pair grid shading rate correction factor, including
Following steps:
Step a): choosing and be no less than 3 groups of cell pieces, and the radical of the secondary grid between different group cell pieces is different；It counts respectively
Calculate the average short circuit current density J of every group of cell pieceSC, main grid geometry shading rate fbusbarAverage value and secondary grid geometry shading rate
ffingerAverage value；
Step b): with ffingerFor abscissa, with JSCIt draws discrete figure for ordinate and does linear fit and obtain straight line, institute
It obtains line correspondences formula (1):
Jsc=JL·(1-fbusbar-K·ffinger), formula (1)；
Wherein, JLFor the wide raw current density of non-shading region, K is the correction factor of secondary grid shading rate；
The slope y and intercept D of straight line are obtained according to discrete figure, according to formula (2) and formula (3), secondary grid can be calculated and hide
The adjusted coefficient K of light rate:
The slope y=-J of the straight lineLK, formula (2)；
The intercept D=J of the straight lineL·(1-fbusbar), formula (3).
Wherein, main grid geometry shading rate fbusbarFor the area of main grid and the ratio of cell piece area, secondary grid geometry shading rate
ffingerFor the area of secondary grid and the ratio of cell piece area.
In the present invention, the main grid geometry shading rate fbusbar=main grid radical n × main grid width w/ battery leaf length L.
In the present invention, the pair grid geometry shading rate ffinger=pair grid radical n × pair grid width w/ battery leaf length L.
The wide raw current density, J of non-shading regionLRefer to that cell piece surface removes the silicon nitride of main grid and secondary grid shield portions
Current density caused by locating.
In current industry, there are no people to propose specific measuring method, test proposed by the present invention to secondary grid shading rate
Method has filled up the blank of this respect.
The present invention is no less than 3 groups of cell piece by choosing, and the secondary grid radical of the electrode pattern of each group cell piece is different, from
And secondary grid geometry shading rate ffingerDifference, and then according to short-circuit current density JSCWith secondary grid geometry shading rate ffingerRelationship,
That is: Jsc=JL·(1-fbusbar-K·ffinger), and utilize discrete figure grid geometry shading rate f secondary to obtained differencefingerUnder
Short-circuit current density JSCDiscrete value be fitted, to calculate the value of adjusted coefficient K.
The present invention passes through the adjusted coefficient K for calculating secondary grid shading rate, so as to calculate secondary grid shading rate.The shape of secondary grid
Structure has larger impact to the adjusted coefficient K of secondary grid shading rate, therefore, can not according to the adjusted coefficient K of secondary grid shading rate
The structure of disconnected optimization design pair grid, so that the electrical property of cell piece be made to be further improved.Pass through repairing for secondary grid shading rate
The value of secondary grid shading rate can be calculated in positive coefficient K and secondary grid geometry shading rate, so as to the electricity to different secondary grid structures
Pond piece carries out performance comparison, and then can be used as an important evidence of evaluation battery piece performance.
As a preferred embodiment of the present invention, in the step a), the short-circuit current density between the cell piece is poor
Different control is in 30mA/cm2Within；Preferably, the short-circuit current density difference between the cell piece is controlled in 20mA/cm2With
It is interior；It is further preferred that the short-circuit current density difference between the cell piece is controlled in 15mA/cm2Within.Of the invention is excellent
It selects in embodiment, the short-circuit current density difference between the cell piece is typical but without limitation for example are as follows: 0mA/cm2、
5mA/cm2、10mA/cm2、15mA/cm2、20mA/cm2、 25mA/cm2Or 30mA/cm2.By the way that the short circuit between cell piece is electric
Current density difference is controlled in 30mA/cm2Within, it can be ensured that battery tablet quality is uniform, prevents from causing because of cell piece film source difference
The short-circuit current density of the cell piece measured has larger difference.
As a preferred embodiment of the present invention, in the step a), the group number of the cell piece of selection is no less than 4 groups；It is excellent
Selection of land, the group number of the cell piece of selection are 4-15 group；It is further preferred that the group number for the cell piece chosen is 4-10 group.This hair
In bright preferred embodiment, the group number of the cell piece of selection is different typical but without limitation for example are as follows: 3 groups, 4 groups, 5 groups, 6
Group, 7 groups, 8 groups, 9 groups, 10 groups, 11 groups, 12 groups, 13 groups, 14 groups or 15 groups.The group number of cell piece is more, obtained discrete data
More, so that the obtained straight line of fitting is closer to true data line, but the group number of cell piece is excessive, will increase test at
This, therefore, in the preferred embodiment of the present invention, the group number of the cell piece of selection is 4-20 group.
As a preferred embodiment of the present invention, in the step a), the quantity of every group of cell piece is no less than 20；It is preferred that
Ground, the quantity of every group of cell piece are 20-50 piece；It is further preferred that the quantity of every group of cell piece is 20-30 piece.Of the invention
In preferred embodiment, the quantity of every group of cell piece is typical but without limitation for example are as follows: 20,25,30,35,40
Piece, 45 or 50.The quantity of every group of cell piece is more, can more reduce shadow caused by measurement error and cell piece individual difference
It rings.
As a preferred embodiment of the present invention, in the step a), the secondary grid quantity of the cell piece is no less than 60；
Preferably, the secondary grid quantity of the cell piece is 60-220.In the preferred embodiment of the present invention, the secondary grid of cell piece
Quantity is typical but without limitation for example are as follows: 60,70,80,90,100,110,120,130,140
Root, 150,160,170,180,190,200,210 or 220.Secondary grid quantity is not on the cell piece of selection
Preferably very few, the distance that otherwise electronics moves on silicon wafer before being collected by secondary grid is longer, will cause additional recombination losses.
As a preferred embodiment of the present invention, the secondary grid number in the step a), between the difference group cell piece
The difference of amount is greater than 20；Preferably, the difference of the secondary grid quantity between the different group cell pieces is 20-60；Further
Preferably, the difference of the secondary grid quantity between the different group cell pieces is 20-50.The preferred embodiment of the present invention
In, the difference of the secondary grid quantity between different group cell pieces is typical but without limitation for example are as follows: 20,30,40,50
Root or 60.The the difference of secondary grid quantity the big more can pull open the gradient of secondary grid shading-area, to reduce the error in later period calculating.
As a preferred embodiment of the present invention, the cell piece preparation process the following steps are included: silicon wafer through making herbs into wool,
Diffusion, etching, PECVD deposition, silk-screen printing and sintering obtain the cell piece.
As a preferred embodiment of the present invention, the resistivity contrasts of the silicon wafer are controlled in ± 0.2 Ω cm range
Interior, the quality so as to ensure silicon wafer is uniform, and then the cell piece that available quality is uniform, prevents because cell piece film source is poor
There are larger differences for the short-circuit current density of different larger caused cell piece.
The second aspect of the invention provides a kind of measuring method of solar battery pair grid shading rate, according to the above-mentioned sun
The measuring method of energy battery pair grid shading rate correction factor obtains secondary grid shading rate adjusted coefficient K, later according to solar battery
Secondary grid shading rate f=KffingerAcquire secondary grid shading rate.
The third aspect of the invention provides a kind of evaluation method of halftone, according to above-mentioned solar battery pair grid shading rate
The measuring method of correction factor obtains adjusted coefficient K, and K value is less than or equal to 0.8, determines that printing quality is qualified, and K value is greater than 0.8,
Determine that printing quality is unqualified.
The shape and structure of secondary grid is influenced by silk-screen printing technique, different scraper dynamics, speed, halftone and cell piece away from
Defection influences the shape of electrode, to influence the adjusted coefficient K of secondary grid shading rate, and then influences the secondary grid shading rate of cell piece.
By the value of the available secondary grid shading rate of measurement K and geometry shading rate, therefore the adjusted coefficient K of secondary grid shading rate can be used as
Adjust an important evidence of silk-screen printing technique.
The viscosity of slurry will affect the electrode shape printed out, to influence the secondary grid shading rate of cell piece.Secondary grid hide
The adjusted coefficient K of light rate can help to adjust the proportion of slurry and adjust slurry viscosity, to obtain small secondary grid shading rate.
Halftone in silk-screen printing is with the increase of number of use, the line width of the secondary grid of printing can gradually increase, and height is gradually
It reduces.
Therefore, monitoring K value can monitor the silk-screen printing quality of cell piece in process of production, and K is printed closer to 1
Quality it is poorer.When K is less than or equal to 0.8, printing quality is qualified, can continue printing technology；When K is greater than 0.8, printing quality
It measures unqualified, needs to adjust silk-screen printing technique or replace the halftone.
As shown in Figure 1, direction shown in arrow is the index path for being reflected to cell piece surface after light is incident in figure.Secondary grid
The shape of line will affect the practical shading rate of battery, the final efficiency for influencing battery.The practical shading width of K=/geometry is defined to hide
Optical width.Practical shading rate can be obtained indirectly by geometry shading rate and K value, and therefore, K is the amount of secondary gate electrode geometrical morphology
Change.
In the present invention, since main grid radical is much smaller than secondary grid, general 3~5, and the width of main grid 0.7~1.0mm it
Between, the ratio that the reflective part in edge accounts for entire main grid is minimum, because of the amendment without doing shading-area, ignores primary gate electrode
The amendment of shading.
Secondary grid shading rate is the important references for adjusting the technique of silk-screen printing, and secondary grid shading rate is smaller, and the loss of light is smaller,
More be conducive to the promotion of cell piece efficiency.In addition, accurately knowing that battery is practical in the foundation of battery optics simulation model and hiding
The number of light, helps more accurately to judge the optical property of cell piece.
The adjusted coefficient K of a secondary grid shading rate, f are defined in the present inventionfingerFor the geometry shading rate of grid line, K
ffingerThe practical shading rate of as secondary grid, i.e., secondary grid shading rate.In the present invention, a kind of experimental method is provided to measure secondary grid and hide
The adjusted coefficient K of light rate, and then optimize some important parameters in cell piece silk-screen printing technique and simulation calculating work.
Embodiment 1
The present embodiment is a kind of reality of the measuring method of currently preferred solar battery pair grid shading rate correction factor
Apply mode, comprising the following steps:
A): to keep final test and calculated result reliable, the present embodiment uses 4 pieces of halftones, 4 pieces of halftone materials, mesh
Number, tension and secondary grid width are completely the same, the difference is that secondary grid radical is different, the secondary grid radical difference in 4 pieces of halftone figures
It is 80,110,150 and 200；The item number of main grid is four；
B): selecting single-chip 120 of same silicon ingot, test resistance rate, it is desirable that resistivity contrasts in ± 0.2 Ω cm,
To ensure that battery tablet quality is uniform, prevent from that cell piece short-circuit current density is caused to generate difference because of cell piece film source difference；
C): the silicon wafer in step 2) is divided into 4 after making herbs into wool, diffusion, etching and PECVD deposition step in a manner of dealing out the cards
Group, respectively a, b, c, d group, every group 30；Guarantee same board, same technique in preparation process；
D): silk-screen printing:
Back electrode printing: the back electrode and back electric field of a, b, c, d group use identical halftone, slurry, board and printer
Skill is printed；
Positive electrode printing: the halftone pair grid radical that a, b, c, d group use is respectively 80,110,150 and 200,
Other conditions are identical；
E): a, b, c and d group obtain four groups of cell pieces after the sintering of same sintering process, test four groups using IV test machine
The IV characteristic of cell piece calculates every group of average short circuit current density Jsc (mA/cm2) it is respectively 39.1,38.8,38.5 and
38.1。
F): using the line width w of cell piece pair grid in optical microscopy test a, b, c, d groupf(um), respectively 45.4,
49.3,45.2 and 47.9；Use cell piece main grid width w in optical microscopy test a, b, c, d groupbAbout 0.94mm, thus
Obtain main grid shading rate fbusbarIt is 2.44%, secondary grid geometry shading rate ffingerRespectively 2.3%, 3.43%, 4.64% and
5.77%；
G) with ffingerFor abscissa, Jsc is ordinate, draws four groups of Jsc and ffingerScatter plot, as shown in Fig. 2, number
According to as shown in table 1；
This four points are in straight line, linearly dependent coefficient R2=0.9955, it looks into Calculation Method of Correlation Coefficient Test Table and obtains, short circuit current
Density Jsc and secondary grid geometry shading rate ffingerA possibility that linearly related is 99.5%.
Jsc and ffingerApproximately have, Jsc=JL×(1-fbusbar-K·ffinger), it is Jsc and ffingerScatter plot,
It is fitted obtained linear line, the slope of the straight line is-JLK, the intercept of the straight line are JL·(1-fbusbar), according to slope with
Intercept can find out secondary grid shading rate adjusted coefficient K.
J is obtained by Fig. 2LK=29.551, JL·(1-fbusbar)=39.83, we can find out secondary grid shading accordingly
Correction factor is 0.72.
1 each group Jsc, f of tablebusbarAnd ffingerNumerical value
| Group | Secondary grid radical | Jsc(mA/cm2) | fbusbar | ffinger |
| a | 80 | 39.1 | 2.44% | 2.30% |
| b | 110 | 38.8 | 2.44% | 3.43% |
| c | 150 | 38.5 | 2.44% | 4.64% |
| d | 200 | 38.1 | 2.44% | 5.77% |
According to K value, pass through formula pair grid shading rate f=KffingerIt can be in the hope of the secondary grid shading rate of every kind of cell piece.
In the present embodiment, the correction factor of grid shading is 0.72, illustrates that the halftone in the present embodiment for qualified halftone, meets
Requirement.
Using secondary grid shading rate adjusted coefficient K as an important indicator of evaluation halftone, halftone can be further screened, is made
Its properties meets requirement, and then can guarantee cell piece, avoids the occurrence of defect ware.
Embodiment 2
The present embodiment is a kind of reality of the measuring method of currently preferred solar battery pair grid shading rate correction factor
Apply mode, comprising the following steps:
A): to keep final test and calculated result reliable, the present embodiment uses 3 pieces of halftones, 3 pieces of halftone materials, mesh
Number, tension and secondary grid width are completely the same, the difference is that secondary grid radical is different, the secondary grid radical difference in 3 pieces of halftone figures
It is 100,120 and 160, the item number of main grid is four；
B): selecting single-chip 120 of same silicon ingot, test resistance rate, it is desirable that resistivity contrasts in ± 0.2 Ω cm,
To ensure that battery tablet quality is uniform, prevent from that cell piece short-circuit current density is caused to generate difference because of cell piece film source difference；
C): the silicon wafer in step 2) is divided into 3 after making herbs into wool, diffusion, etching and PECVD deposition step in a manner of dealing out the cards
Group, respectively a, b, c group, every group 40；Guarantee same board, same technique in preparation process；
D): silk-screen printing:
Back electrode printing: the back electrode and back electric field of a, b, c group use identical halftone, slurry, board and printing technology
It is printed；
Positive electrode printing: the halftone pair grid radical that a, b, c group use is respectively 100,120,160, other conditions
It is identical；
E): a, b and c group obtain 3 groups of cell pieces after the sintering of same sintering process, test 3 groups of batteries using IV test machine
The IV characteristic of piece calculates every group of average short circuit current density Jsc (mA/cm2) it is respectively 39.1,39.0 and 38.7.
F): using the line width w of cell piece pair grid in optical microscopy test a, b, c groupf(um), respectively 45.5,44.4
With 41.4；Use cell piece main grid width w in optical microscopy test a, b, c groupbAbout 0.94mm, to obtain main grid shading
Rate fbusbarIt is 2.44%, secondary grid geometry shading rate ffingerRespectively 2.90%, 3.40% and 4.23%；
G) with ffingerFor abscissa, Jsc is ordinate, draws 3 groups of Jsc and ffingerScatter plot, as shown in figure 3, number
According to as shown in table 2；
These three points are in straight line, linearly dependent coefficient R2=0.9995, it looks into Calculation Method of Correlation Coefficient Test Table and obtains, short circuit current
Density Jsc and secondary grid geometry shading rate ffingerA possibility that linearly related is 99.8%.
Jsc and ffingerApproximately have, Jsc=JL×(1-fbusbar-K·ffinger), it is Jsc and ffingerScatter plot,
It is fitted obtained linear line, the slope of the straight line is-JLK, the intercept of the straight line are JL·(1-fbusbar), according to slope with
Intercept can find out secondary grid shading rate adjusted coefficient K.
J is obtained by Fig. 3LK=31.18, JL·(1-fbusbar)=40.02, we can find out secondary grid shading accordingly
Correction factor is 0.76.
2 each group Jsc, f of tablebusbarAnd ffingerNumerical value
| Group | Secondary grid radical | Jsc(mA/cm2) | fbusbar | ffinger |
| a | 100 | 39.1 | 2.44% | 2.9% |
| b | 120 | 39.0 | 2.44% | 3.4% |
| c | 160 | 38.7 | 2.44% | 4.23% |
In the present embodiment, the correction factor of grid shading is 0.76, illustrates that the halftone in the present embodiment for qualified halftone, meets
Requirement.
Embodiment 3
The present embodiment is a kind of reality of the measuring method of currently preferred solar battery pair grid shading rate correction factor
Apply mode, comprising the following steps:
A): to keep final test and calculated result reliable, the present embodiment uses 8 pieces of halftones, 8 pieces of halftone materials, mesh
Number, tension and secondary grid width are completely the same, the difference is that secondary grid radical is different, the secondary grid radical difference in 3 pieces of halftone figures
It is 60,80,100,120,140,160,200 and 220, the item number of main grid is four；
B): selecting single-chip 160 of same silicon ingot, test resistance rate, it is desirable that resistivity contrasts in ± 0.2 Ω cm,
To ensure that battery tablet quality is uniform, prevent from that cell piece short-circuit current density is caused to generate difference because of cell piece film source difference；
C): the silicon wafer in step 2) is divided into 8 after making herbs into wool, diffusion, etching and PECVD deposition step in a manner of dealing out the cards
Group, respectively a, b, c, d, e, f, g and h group, every group 20；Guarantee same board, same technique in preparation process；
D): silk-screen printing:
Back electrode printing: the back electrode and back electric field of a, b, c, d, e, f, g and h group use identical halftone, slurry, board
It is printed with printing technology；
Positive electrode printing: the halftone pair grid radical that a, b, c, d, e, f, g and h group use is respectively 60,80,100,
120,140,160,200 and 220, other conditions are identical；
E): a, b, c, d, e, f, g and h group obtain 8 groups of cell pieces after the sintering of same sintering process, use IV test machine
The IV characteristic for testing 8 groups of cell pieces calculates every group of average short circuit current density Jsc (mA/cm2) be respectively 39.5,39.3,
39.1,38.9,38.7,38.5,38.2 and 38.1.
F): using the line width w of cell piece pair grid in optical microscopy test a, b, c, d, e, f, g and h groupf(um), respectively
It is 44.3,43.6,43.6,47.1,45.3,46.9,46.3 and 43.6；Using optical microscopy test a, b, c, d, e, f, g and
Cell piece main grid width w in h groupbAbout 0.94mm, to obtain main grid shading rate fbusbarIt is 2.44%, secondary grid geometry shading
Rate ffingerRespectively 1.69%, 2.22%, 2.78%, 3.61%, 4.05%, 4.79%, 5.90% and 6.11%；
G) with ffingerFor abscissa, Jsc is ordinate, draws 8 groups of Jsc and ffingerScatter plot, as shown in figure 4, number
According to as shown in table 3；
This 8 points are in straight line, linearly dependent coefficient R2=0.996, it looks into Calculation Method of Correlation Coefficient Test Table and obtains, short circuit current is close
Spend Jsc and secondary grid geometry shading rate ffingerA possibility that linearly related is 99.5%.
Jsc and ffingerApproximately have, Jsc=JL×(1-fbusbar-K·ffinger), it is Jsc and ffingerScatter plot,
It is fitted obtained linear line, the slope of the straight line is-JLK, the intercept of the straight line are JL·(1-fbusbar), according to slope with
Intercept can find out secondary grid shading rate adjusted coefficient K.
J is obtained by Fig. 4LK=30.24, JL·(1-fbusbar)=39.98, we can find out secondary grid shading accordingly
Correction factor is 0.74.
3 each group Jsc, f of tablebusbarAnd ffingerNumerical value
| Group | Secondary grid radical | Jsc(mA/cm2) | fbusbar | ffinger |
| a | 60 | 39.5 | 2.44 | 1.69 |
| b | 80 | 39.3 | 2.44 | 2.22 |
| c | 100 | 39.1 | 2.44 | 2.78 |
| d | 120 | 38.9 | 2.44 | 3.61 |
| e | 140 | 38.7 | 2.44 | 4.05 |
| f | 160 | 38.5 | 2.44 | 4.79 |
| g | 200 | 38.2 | 2.44 | 5.90 |
| h | 220 | 38.1 | 2.44 | 6.11 |
In the present embodiment, the correction factor of grid shading is 0.74, illustrates that the halftone in the present embodiment for qualified halftone, meets
Requirement.
Embodiment 4
The present embodiment is a kind of reality of the measuring method of currently preferred solar battery pair grid shading rate correction factor
Apply mode, comprising the following steps:
A): to keep final test and calculated result reliable, the present embodiment use 3 pieces of halftones, 3 pieces of halftone materials, mesh number,
Tension and secondary grid width are completely the same, the difference is that secondary grid radical is different, the secondary grid radical in 3 pieces of halftone figures is respectively
100,120 and 160, the item number of main grid is four；
B): selecting single-chip 120 of same silicon ingot, test resistance rate, it is desirable that resistivity contrasts in ± 0.2 Ω cm,
To ensure that battery tablet quality is uniform, prevent from that cell piece short-circuit current density is caused to generate difference because of cell piece film source difference；
C): the silicon wafer in step 2) is divided into 3 after making herbs into wool, diffusion, etching and PECVD deposition step in a manner of dealing out the cards
Group, respectively a, b, c group, every group 40；Guarantee same board, same technique in preparation process；
D): silk-screen printing:
Back electrode printing: the back electrode and back electric field of a, b, c group use identical halftone, slurry, board and printing technology
It is printed；
Positive electrode printing: the halftone pair grid radical that a, b, c group use is respectively 100,120,160, other conditions
It is identical；
E): a, b and c group obtain 3 groups of cell pieces after the sintering of same sintering process, test 3 groups of batteries using IV test machine
The IV characteristic of piece calculates every group of average short circuit current density Jsc (mA/cm2) it is respectively 38.6,38.3 and 37.8.
F): using the line width w of cell piece pair grid in optical microscopy test a, b, c groupf(um), respectively 55.1,54.2
With 56.5；Use cell piece main grid width w in optical microscopy test a, b, c groupbAbout 0.94mm, to obtain main grid shading
Rate fbusbarIt is 2.44%, secondary grid geometry shading rate ffingerRespectively 3.52%, 4.15% and 5.77%；
G) with ffingerFor abscissa, Jsc is ordinate, draws 3 groups of Jsc and ffingerScatter plot, as shown in figure 5, number
According to as shown in table 4；
These three points are in straight line, linearly dependent coefficient R2=0.9827, it looks into Calculation Method of Correlation Coefficient Test Table and obtains, short circuit current
Density Jsc and secondary grid geometry shading rate ffingerA possibility that linearly related is 90%.
Jsc and ffingerApproximately have, Jsc=JL×(1-fbusbar-K·ffinger), it is Jsc and ffingerScatter plot,
It is fitted obtained linear line, the slope of the straight line is-JLK, the intercept of the straight line are JL·(1-fbusbar), according to slope with
Intercept can find out secondary grid shading rate adjusted coefficient K.
J is obtained by Fig. 5LK=35.17, JL·(1-fbusbar)=39.79, we can find out secondary grid shading accordingly
Correction factor is 0.86.
4 each group Jsc, f of tablebusbarAnd ffingerNumerical value
| Group | Secondary grid radical | Jsc(mA/cm2) | fbusbar | ffinger |
| a | 100 | 38.6 | 2.44% | 3.52% |
| b | 120 | 38.3 | 2.44% | 4.15% |
| c | 160 | 37.8 | 2.44% | 5.77% |
In the present embodiment, the correction factor of grid shading is 0.86, illustrates that the silk-screen printing technique in the present embodiment is unqualified,
Halftone or adjustment silk-screen printing technique should be replaced.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of measuring method of solar battery pair grid shading rate correction factor, which comprises the following steps:
Step a): choosing and be no less than 3 groups of cell pieces, and the radical of the secondary grid between different group cell pieces is different；It calculates separately every
The average short circuit current density J of group cell pieceSC, main grid geometry shading rate fbusbarAverage value and secondary grid geometry shading rate ffingerIt is flat
Mean value；
Step b): with ffingerFor abscissa, with JSCIt draws discrete figure for ordinate and does linear fit and obtain straight line, gained is straight
Line corresponding (1):
Jsc=JL·(1-fbusbar-K·ffinger), formula (1)；
Wherein, JLFor the wide raw current density of non-shading region, K is the correction factor of secondary grid shading rate；
The slope y and intercept D of straight line are obtained according to discrete figure, according to formula (2) and formula (3), secondary grid shading rate can be calculated
Adjusted coefficient K:
The slope y=-J of the straight lineLK, formula (2)；
The intercept D=J of the straight lineL·(1-fbusbar), formula (3).
2. the measuring method of solar battery pair grid shading rate correction factor according to claim 1, which is characterized in that institute
It states in step a), the short-circuit current density difference between the cell piece is controlled in 30mA/cm2Within.
3. the measuring method of solar battery pair grid shading rate correction factor according to claim 1, which is characterized in that institute
It states in step a), the group number of the cell piece of selection is no less than 4 groups.
4. the measuring method of solar battery pair grid shading rate correction factor according to claim 1, which is characterized in that institute
It states in step a), the quantity of every group of cell piece is no less than 20.
5. the measuring method of solar battery pair grid shading rate correction factor according to claim 1, which is characterized in that institute
It states in step a), the secondary grid quantity of the cell piece is no less than 60.
6. the measuring method of solar battery pair grid shading rate correction factor according to claim 1, which is characterized in that institute
It states in step a), the difference of the secondary grid quantity between the difference group cell piece is greater than 10.
7. the measuring method of solar battery pair grid shading rate correction factor according to claim 1-6, special
Sign is, the preparation process of the cell piece the following steps are included: silicon wafer through making herbs into wool, diffusion, etching, PECVD deposition, screen printing
Brush and sintering obtain the cell piece.
8. the measuring method of solar battery pair grid shading rate correction factor according to claim 7, which is characterized in that institute
The resistivity contrasts for stating silicon wafer control within the scope of ± 0.2 Ω cm.
9. a kind of measuring method of solar battery pair grid shading rate, which is characterized in that according to claim 1 described in -8 any one
The measuring method of solar battery pair grid shading rate correction factor obtain secondary grid shading rate adjusted coefficient K, later according to the sun
It can battery pair grid shading rate f=KffingerAcquire secondary grid shading rate, wherein ffingerSecondary grid geometry shading rate.
10. a kind of evaluation method of cell piece printing quality, which is characterized in that it is according to claim 1-8 too
The measuring method of positive energy battery pair grid shading rate correction factor obtains adjusted coefficient K, and K value is less than or equal to 0.8, determines printing quality
Qualification, K value are greater than 0.8, determine that printing quality is unqualified.
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| CN102956751A (en) * | 2012-11-26 | 2013-03-06 | 浙江正泰太阳能科技有限公司 | Design method of front electrode of solar cell, and solar cell |
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