CN102569503A - Method for evaluating height-to-width ratio of auxiliary grid line of crystalline silicon solar cell - Google Patents
Method for evaluating height-to-width ratio of auxiliary grid line of crystalline silicon solar cell Download PDFInfo
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- CN102569503A CN102569503A CN2011104284865A CN201110428486A CN102569503A CN 102569503 A CN102569503 A CN 102569503A CN 2011104284865 A CN2011104284865 A CN 2011104284865A CN 201110428486 A CN201110428486 A CN 201110428486A CN 102569503 A CN102569503 A CN 102569503A
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Abstract
The invention relates to a method for evaluating a height-to-width ratio of an auxiliary grid line of a crystalline silicon solar cell. The method is characterized by comprising the following steps of: 1, uniformly classifying crystalline silicon slices of the same feeding batch into two groups; 2, obtaining a finished product to be processed; 3, performing screen printing on the finished product to be processed, sintering the treated finished product, and obtaining two groups of contrast finished products; 4, performing microscopic observation on the grid line by taking two types of crystalline silicon slices from the two groups of contrast finished products, and measuring a cross sectional area of the grid line and a width of the grid line covering the cell for the two types of crystalline silicon slices, and calculating grid line data of the crystalline silicon slices through a formula sigma=S1/2/W; and 5, comparing calculation results, and selecting the finished product with a relatively large value as a qualified product. Therefore, the shortcoming of the conventional grid line measurement is overcome; the influence factor of series resistance of the crystalline silicon slices is considered; the cross sectional area S and the grid line width W are involved; and the printing quality of the grid line can be evaluated more intuitively and effectively.
Description
Technical field
The present invention relates to a kind of grid line depth-width ratio evaluation method, relate in particular to a kind of method of estimating the secondary grid line depth-width ratio of crystal silicon solar batteries sheet.
Background technology
Grid line serves as the collection photo-generated carrier in the crystal silicon solar sheet, effect and huge.For P mold base crystal silicon battery, what (size of series resistance) have determined the quality of the electric property of battery sheet to a great extent for what (sizes of short circuit current) and the loss of charge carrier in collection process of the generation of charge carrier.The grid line height is high more, and width is narrow more, and promptly depth-width ratio is big more, helps the lifting of battery sheet short circuit current and the decline of series resistance.Because current grid line mainly is to obtain through silk screen printing slurry and sintering, under the situation of same process, the grid line printing receives the influence of half tone and slurry huge, so estimate the match condition that the quality of grid line also can be reacted half tone and slurry.
Current; Estimating the grid line depth-width ratio mainly is through surface profiler (physical method) and 3D microscope (optical means), and test and observation grid line are measured the peak and the base widths in its a certain cross section; Do ratio, as its depth-width ratio value (depth-width ratio=peak/base widths).
Yet the method has its limitation, according to resistance R=ρ l/s; Wherein ρ is a resistivity, and l is a length, and S is a cross-sectional area; R and cross-sectional area S are inversely proportional to, and for crystal silicon battery, are under the less situation of W; Realize the maximization of S, current depth-width ratio only is that the ratio through grid line maximum height and grid line width comes comparison grid line printing quality, and it just has deviation in itself; For being used in printing special in the crystal silicon battery, like twice printing, utilize current depth-width ratio method that its grid line is estimated, its value can but can be lower than Fig. 1, and (W is identical, and h2＞h1), obviously the result is not very accurate.
Summary of the invention
The object of the invention is exactly the problems referred to above that exist in the prior art in order to solve, and a kind of method of estimating the secondary grid line depth-width ratio of crystal silicon solar batteries sheet is provided.
The object of the invention is realized through following technical scheme:
Estimate the method for the secondary grid line depth-width ratio of crystal silicon solar batteries sheet, it is characterized in that may further comprise the steps: 1. step gets the crystal silicon chip of same feedstock batch, evenly is divided into two groups; 2. step carries out the crystal silicon chip after dividing into groups to prepare before the identical measurement, obtains finished product to be processed; 3. step carries out silk screen printing with finished product to be processed; Step 4., the finished product after 3. step accomplished carries out sintering, obtains two groups of contrast finished products; 5. step gets two crystalloid silicon chips respectively in two groups of contrast finished products, all adopt identical micro-method of testing to measure; 6. step carries out the measurement that grid line cross-sectional area S and grid line cover the silicon chip width W to the two crystalloid silicon chips of step in 5., through formula ζ=S
1/2/ W calculates the grid line data of two crystalloid silicon chips; 7. step compares step result of calculation 6., and what numerical value was bigger is preferred article.
The method of the secondary grid line depth-width ratio of above-mentioned evaluation crystal silicon solar batteries sheet, wherein: making herbs into wool, diffusion, the back of preparing to include before the 2. described measurement of step cleaned, PECVD plating SiNx film.
Further, the method for the secondary grid line depth-width ratio of above-mentioned evaluation crystal silicon solar batteries sheet, wherein: the 3. described silk screen printing of step, to adopting at least two kinds of different web plates with a kind of slurry.
Further, the method for the secondary grid line depth-width ratio of above-mentioned evaluation crystal silicon solar batteries sheet, wherein: 5. middle maintenance crystal silicon chip of described step and testing stand are smooth.
The advantage of technical scheme of the present invention is mainly reflected in: grid line measures drawback before having overcome, and has considered the influencing factor of crystal silicon chip series resistance, has contained cross-sectional area S and grid line width W, more directly estimates the quality of grid line printing effectively.
Description of drawings
The object of the invention, advantage and characteristics will illustrate through the non-limitative illustration of following preferred embodiment and explain.These embodiment only are the prominent examples of using technical scheme of the present invention, and all technical schemes of taking to be equal to replacement or equivalent transformation and forming all drop within the scope of requirement protection of the present invention.In the middle of these accompanying drawings,
Fig. 1 adopts the polysilicon chip of A slurry and B half tone through grid line cross section, printing back;
Fig. 2 adopts the polysilicon chip of A slurry and C half tone through grid line cross section, printing back.
Embodiment
Estimate the method for the secondary grid line depth-width ratio of crystal silicon solar batteries sheet, its unusual part is may further comprise the steps: at first, get the polysilicon chip of same feedstock batch, evenly be divided into two groups.Afterwards, the polysilicon chip after dividing into groups is carried out preparing before the identical measurement, obtain finished product to be processed.Specifically, measure making herbs into wool, diffusion, back cleaning, the PECVD plating SiNx film that preceding preparation includes.
Then, finished product to be processed is carried out silk screen printing.Simultaneously, consider and to obtain objective grid line data that to the preferable contrast degree of difference acquisition of web plate, the silk screen printing that the present invention adopts is to adopting at least two kinds of different web plates with a kind of slurry.Simultaneously, the finished product after the completion carries out sintering, obtains two groups of contrast finished products.
Immediately, in two groups of contrast finished products, get two polycrystal silicon chips respectively, all adopt 3D microscope appearance to measure.Certainly, for fear of the error that occurs measuring, keep polycrystal silicon chip and testing stand smooth.
Afterwards, two above-mentioned polysilicon chips are carried out the measurement of grid line cross-sectional area S and grid line covering silicon chip width W, through formula ζ=S
1/2/ W calculates the grid line data of two crystalloid silicon chip sheet grid lines;
At last, result of calculation compares, and what numerical value was bigger is preferred article.
With regard to the present invention's one preferred implementation, get the 156*156 of same feedstock batch, 2000 of P type polysilicon chips; After dividing two groups every group each 1000, pass through preceding cleaning respectively, diffusion; The back is cleaned, and PECVD and silk-screen process (but web plate is different) are with the finished product for preparing; Select two in two groups, operation 3D microscope appearance is tested.Test is carried out the measurement of grid line cross-sectional area S and grid line clad battery sheet width W respectively after accomplishing to the battery sheet, last value ζ=S
1/2/ W is as the quality of estimating silk screen printing battery grid line.Test data is following:
A slurry+B half tone: 1188.147
1/2/ 75.536=0.456 (as shown in Figure 1),
A slurry+C half tone: 29.682/74.884=0.428 (as shown in Figure 2),
Will obtain: the grid line of A slurry+B screen painting can be superior to the grid line of A slurry+C screen painting, also is consistent from series resistance Rs with efficiency value in fact.
Special needs to be pointed out is; If according to existing traditional evaluation methods: A slurry+B half tone: 28.178/75.536=0.373; A slurry+C half tone: 29.682/74.884=0.396; Then can obtain: the grid line of A slurry+B screen painting can be worse than the grid line of A slurry+C screen painting, but is opposite from series resistance Rs and efficiency value in fact.Thus, data result is incorrect.
Can find out that through above-mentioned character express behind employing the present invention, grid line measures drawback before having overcome, and has considered the influencing factor of crystal silicon chip series resistance, has contained cross-sectional area S and grid line width W, more directly estimate the quality of grid line printing effectively.
Claims (4)
1. estimate the method for the secondary grid line depth-width ratio of crystal silicon solar batteries sheet, it is characterized in that may further comprise the steps:
1. step gets the crystal silicon chip of same feedstock batch, evenly is divided into two groups;
2. step carries out the crystal silicon chip after dividing into groups to prepare before the identical measurement, obtains finished product to be processed;
3. step carries out silk screen printing with finished product to be processed;
Step 4., the finished product after 3. step accomplished carries out sintering, obtains two groups of contrast finished products;
5. step gets two crystalloid silicon chips respectively in two groups of contrast finished products, all adopt identical micro-method of testing to measure;
6. step carries out the measurement that grid line cross-sectional area S and grid line cover the silicon chip width W to the two crystalloid silicon chips of step in 5., through formula ζ=S
1/2/ W calculates the grid line data of two crystalloid silicon chips;
7. step compares step result of calculation 6., and what numerical value was bigger is preferred article.
2. the method for the secondary grid line depth-width ratio of evaluation crystal silicon solar batteries sheet according to claim 1 is characterized in that: making herbs into wool, diffusion, the back of preparing to include before the 2. described measurement of step cleaned, PECVD plating SiNx film.
3. the method for the secondary grid line depth-width ratio of evaluation crystal silicon solar batteries sheet according to claim 1 is characterized in that: the 3. described silk screen printing of step, and to adopting at least two kinds of different web plates with a kind of slurry.
4. the method for the secondary grid line depth-width ratio of evaluation crystal silicon solar batteries sheet according to claim 1 is characterized in that: 5. middle maintenance crystal silicon chip of described step and testing stand are smooth.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275246A (en) * | 2017-07-05 | 2017-10-20 | 苏州阿特斯阳光电力科技有限公司 | Solar cell pair grid shading rate correction factor and the assay method of secondary grid shading rate and the evaluation method of cell piece printing quality |
| CN109494168A (en) * | 2018-12-10 | 2019-03-19 | 西安宏星电子浆料科技有限责任公司 | A kind of crystal silicon solar batteries metallization grid line electric performance test method |
| CN112509936A (en) * | 2020-11-06 | 2021-03-16 | 浙江爱旭太阳能科技有限公司 | Silicon crystal solar cell electrode grid line printability evaluation method and application thereof |
| CN116525480A (en) * | 2023-05-10 | 2023-08-01 | 广东空天科技研究院(南沙) | Microscopic image-based automatic detection method for forming quality of laser grid line |
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| US7098050B1 (en) * | 2004-10-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | Corona based charge voltage measurement |
| CN101635317A (en) * | 2009-05-26 | 2010-01-27 | 珈伟太阳能(武汉)有限公司 | Back aluminium diffused N type solar cell and manufacturing method of back electrode |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275246A (en) * | 2017-07-05 | 2017-10-20 | 苏州阿特斯阳光电力科技有限公司 | Solar cell pair grid shading rate correction factor and the assay method of secondary grid shading rate and the evaluation method of cell piece printing quality |
| CN107275246B (en) * | 2017-07-05 | 2019-09-20 | 苏州阿特斯阳光电力科技有限公司 | The evaluation method of the measuring method and cell piece printing quality of solar battery pair grid shading rate correction factor and secondary grid shading rate |
| CN109494168A (en) * | 2018-12-10 | 2019-03-19 | 西安宏星电子浆料科技有限责任公司 | A kind of crystal silicon solar batteries metallization grid line electric performance test method |
| CN109494168B (en) * | 2018-12-10 | 2022-07-26 | 西安宏星电子浆料科技有限责任公司 | Method for testing electrical performance of metalized grid line of crystalline silicon solar cell |
| CN112509936A (en) * | 2020-11-06 | 2021-03-16 | 浙江爱旭太阳能科技有限公司 | Silicon crystal solar cell electrode grid line printability evaluation method and application thereof |
| CN112509936B (en) * | 2020-11-06 | 2023-09-15 | 浙江爱旭太阳能科技有限公司 | Method for evaluating printability of electrode grid line of silicon crystal solar cell and application thereof |
| CN116525480A (en) * | 2023-05-10 | 2023-08-01 | 广东空天科技研究院(南沙) | Microscopic image-based automatic detection method for forming quality of laser grid line |
| CN116525480B (en) * | 2023-05-10 | 2023-11-10 | 广东空天科技研究院(南沙) | Microscopic image-based automatic detection method for forming quality of laser grid line |
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Application publication date: 20120711 |