CN107256920A - A kind of high luminous intensity burst of ultraviolel white light LEDs and preparation method thereof - Google Patents
A kind of high luminous intensity burst of ultraviolel white light LEDs and preparation method thereof Download PDFInfo
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- CN107256920A CN107256920A CN201710695976.9A CN201710695976A CN107256920A CN 107256920 A CN107256920 A CN 107256920A CN 201710695976 A CN201710695976 A CN 201710695976A CN 107256920 A CN107256920 A CN 107256920A
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- glue
- fluorescent powder
- light leds
- white light
- white
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- 238000002360 preparation method Methods 0.000 title claims description 14
- 239000000843 powder Substances 0.000 claims abstract description 37
- 239000000084 colloidal system Substances 0.000 claims abstract description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims description 35
- 239000000499 gel Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- -1 silicon Oxygen alkane Chemical class 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 2
- 238000003756 stirring Methods 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a kind of high luminous intensity burst of ultraviolel white light LEDs, the white light LEDs include the white fluorescent powder colloid that UV LED chip, white fluorescent powder and phosphor gel are mixed to form, white fluorescent powder colloid is coated on UV LED chip, the mass ratio of curing agent added with 1 ~ 5wt% in the white fluorescent powder colloid, the white fluorescent powder and phosphor gel is 1：2~3.The white light LEDs are using UV LED chip as matrix, with ultraviolet excitation white fluorescent colloid, and colloid used is difficult to be decomposed by ultraviolet light and ozone, and no double bond is present, at high temperature（Or radiation exposure）The chemical bond of molecule is not broken, and is used for a long time, is not cracked, non-sclerous, colloid can heal automatically after being ftractureed by external force.
Description
Technical field
The invention belongs to White light LED technology field, and in particular to a kind of high luminous intensity burst of ultraviolel white light LEDs and its system
Preparation Method.
Background technology
GaN is a kind of wide bandgap compound semiconductors material, with transmitting blue light, high temperature, high frequency, high pressure, it is high-power and
Acidproof, alkaline-resisting, corrosion-resistant the features such as, be one of topmost semi-conducting material after germanium, silicon and GaAs.So that it is in indigo plant
Light and ultraviolet photoelectron technical field occupy critical role, are also to make high temperature, the ideal material of large power semiconductor device.
At present, gallium nitride based LED obtains white light main method and had：Blue-ray LED+yellow fluorescent powder, three-color LED synthesis are white
Light, 3 kinds of methods of purple LED+three-color phosphor.
Commercial white light LEDs are to utilize GaN base matter LED chip and the surface for launching 450-470 nano blue lights at present
The blue light of coating excites the yttrium aluminate fluorescent material of the fluorescent material of yellow emission, mainly cerium dopping.This commercial fluorescent material
In the presence of some shortcomings, mainly poor color saturation and the unstability of colour temperature.It is due to lack in white light that color saturation is poor
Few red light portion, the unstability of colour temperature is due to caused by making LED and fluorescent material performance degradation for a long time.
For white light LEDs, the current country is primarily present following patent document：
Publication No. 106876544A Chinese patent disclose a kind of spontaneous White-light LED chip structure of GaN base unstressed configuration powder and
Its preparation method, wherein preparation method include：It is thin that GaN cushions, N-type GaN, silica are sequentially depositing on a sapphire substrate
Film.Using photoetching technique along Sapphire Substrate [1-100] and [11-20] crystal orientation in described SiO2Perform etching, make on film
Standby SiO2Mask.Grow N-type GaN, InGaN/GaN SQW, p-type GaN, transparency conducting layer successively in silicon dioxide mask layer
And prepare N-type and P-type electrode.The present invention takes into account the current conventional semiconductor devices technological process of production, it is possible to achieve
Ejecting white light under conditions of unstressed configuration powder, it is to avoid influence of the fluorescent material to the attenuation of white light LEDs.
The content of the invention
To solve above-mentioned problem, it is an object of the invention to provide a kind of high luminous intensity burst of ultraviolel white light
LED and preparation method thereof, the white light LEDs are using UV LED chip as matrix, with ultraviolet excitation white fluorescent colloid, glue used
Body is difficult to be decomposed by ultraviolet light and ozone, and no double bond is present, at high temperature（Or radiation exposure）The chemical bond of molecule is not broken,
It is used for a long time, is not cracked, non-sclerous, colloid can heals automatically after being ftractureed by external force.
To reach above-mentioned purpose, the technical scheme is that：
A kind of high luminous intensity burst of ultraviolel white light LEDs, the white light LEDs include UV LED chip, white fluorescent powder and fluorescent material
The white fluorescent powder colloid that glue is mixed to form, white fluorescent powder colloid is coated on UV LED chip, the white fluorescent powder colloid
Inside it is added with 1 ~ 5wt% curing agent, the mass ratio of the white fluorescent powder and phosphor gel is 1：2~3.
Further, the glue material of the phosphor gel is silica gel, including A glue and B glue, and the mass ratio of A glue and B glue is 1：1~2.
Preferably, the mass ratio of the A glue and B glue is 1：1.
Preferably, A glue viscosity at 25 DEG C is 8000mPas, and B glue viscosity at 25 DEG C is 3500mPas.
Preferably, the curing agent is siloxanes.
Meanwhile, the present invention also provides a kind of preparation method of high luminous intensity burst of ultraviolel white light LEDs, the preparation method
Comprise the following steps：1) extracting container, A glue and B glue, are mixed 10 ~ 15 minutes, vacuum defoamation under 40 ~ 50 revs/min of rotating speed
5 ~ 10 minutes, obtain phosphor gel；2) white fluorescent powder, curing agent are added, 20 ~ 30 points are stirred under 50 ~ 60 revs/min of rotating speed
Clock, obtains white fluorescent powder colloid；3) solidify：White fluorescent powder colloid is toasted at 70 ~ 80 DEG C 40 ~ 60 minutes, then be warming up to 100
~ 120 DEG C are toasted 1.5 ~ 2.5 hours；4) by step 3) solidification after white fluorescent powder colloid injection be coated on UV LED chip table
Face, produces the high luminous intensity burst of ultraviolel white light LEDs.
Further, gained phosphor gel viscosity at 25 DEG C is 5000mPas after mixing.
Preferably, the step 3) solidification after 25 DEG C of white fluorescent powder colloid at refractive index be 1.41.
The invention has the advantages that：
The white light LEDs are using UV LED chip as matrix, and with ultraviolet excitation white fluorescent colloid, colloid used is difficult ultraviolet
Light and ozone are decomposed, and no double bond is present, at high temperature（Or radiation exposure）The chemical bond of molecule is not broken, and is used for a long time, no
Cracking, it is non-sclerous, colloid can heal automatically after being ftractureed by external force.
Embodiment
Below by specific embodiment, the present invention is described further, but embodiment is not intended to limit the protection of the present invention
Scope.
A kind of high luminous intensity burst of ultraviolel white light LEDs provided by the present invention, the white light LEDs include UV LED chip,
The white fluorescent powder colloid that white fluorescent powder is mixed to form with phosphor gel, white fluorescent powder colloid is coated on UV LED chip,
The mass ratio of curing agent added with 1 ~ 5wt% in the white fluorescent powder colloid, the white fluorescent powder and phosphor gel is 1：
2~3。
Further, the glue material of the phosphor gel is silica gel, including A glue and B glue, and the mass ratio of A glue and B glue is 1：1~2.
Preferably, the mass ratio of the A glue and B glue is 1：1.
Preferably, A glue viscosity at 25 DEG C is 8000mPas, and B glue viscosity at 25 DEG C is 3500mPas.
Preferably, the curing agent is siloxanes.
Meanwhile, the present invention also provides a kind of preparation method of high luminous intensity burst of ultraviolel white light LEDs, the preparation method
Comprise the following steps：1) extracting container, A glue and B glue, are mixed 10 ~ 15 minutes, vacuum defoamation under 40 ~ 50 revs/min of rotating speed
5 ~ 10 minutes, obtain phosphor gel；2) white fluorescent powder, curing agent are added, 20 ~ 30 points are stirred under 50 ~ 60 revs/min of rotating speed
Clock, obtains white fluorescent powder colloid；3) solidify：White fluorescent powder colloid is toasted at 70 ~ 80 DEG C 40 ~ 60 minutes, then be warming up to 100
~ 120 DEG C are toasted 1.5 ~ 2.5 hours；4) by step 3) solidification after white fluorescent powder colloid injection be coated on UV LED chip table
Face, produces the high luminous intensity burst of ultraviolel white light LEDs.
Further, gained phosphor gel viscosity at 25 DEG C is 5000mPas after mixing.
Preferably, the step 3) solidification after 25 DEG C of white fluorescent powder colloid at refractive index be 1.41.
It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted.Although with reference to compared with
The present invention is described in detail good embodiment, it will be understood by those within the art that, can be to the technology of invention
Scheme is modified or equivalent substitution, and without departing from the scope of technical solution of the present invention, it all should cover the power in the present invention
In sharp claimed range.
Claims (8)
1. a kind of high luminous intensity burst of ultraviolel white light LEDs, it is characterised in that the white light LEDs include UV LED chip, white
The white fluorescent powder colloid that fluorescent material is mixed to form with phosphor gel, white fluorescent powder colloid is coated on UV LED chip, described
The mass ratio of curing agent added with 1 ~ 5wt% in white fluorescent powder colloid, the white fluorescent powder and phosphor gel is 1：2~3.
2. high luminous intensity burst of ultraviolel white light LEDs according to claim 1, it is characterised in that the phosphor gel
Glue material is silica gel, including A glue and B glue, and the mass ratio of A glue and B glue is 1：1~2.
3. high luminous intensity burst of ultraviolel white light LEDs according to claim 2, it is characterised in that the A glue and B glue
Mass ratio is 1：1.
4. high luminous intensity burst of ultraviolel white light LEDs according to claim 2, it is characterised in that the A glue is at 25 DEG C
Viscosity is 8000mPas, and B glue viscosity at 25 DEG C is 3500mPas.
5. high luminous intensity burst of ultraviolel white light LEDs according to claim 1, it is characterised in that the curing agent is silicon
Oxygen alkane.
6. a kind of preparation method of high luminous intensity burst of ultraviolel white light LEDs as any one of claim 1 ~ 5, it is special
Levy and be, the preparation method comprises the following steps：1) extracting container, A glue and B glue, mix under 40 ~ 50 revs/min of rotating speed and stir
Mix 10 ~ 15 minutes, vacuum defoamation 5 ~ 10 minutes obtains phosphor gel；2) white fluorescent powder, curing agent are added, at 50 ~ 60 revs/min
Rotating speed under stir 20 ~ 30 minutes, obtain white fluorescent powder colloid；3) solidify：White fluorescent powder colloid 40 is toasted at 70 ~ 80 DEG C
~ 60 minutes, then be warming up to 100 ~ 120 DEG C toast 1.5 ~ 2.5 hours；4) by step 3) solidification after white fluorescent powder colloid injection
UV LED chip surface is coated on, the high luminous intensity burst of ultraviolel white light LEDs are produced.
7. a kind of preparation method of high luminous intensity burst of ultraviolel white light LEDs according to claim 6, it is characterised in that
Gained phosphor gel viscosity at 25 DEG C is 5000mPas after mixing.
8. a kind of preparation method of high luminous intensity burst of ultraviolel white light LEDs according to claim 6, it is characterised in that
The step 3) solidification after 25 DEG C of white fluorescent powder colloid at refractive index be 1.41.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710695976.9A CN107256920A (en) | 2017-08-15 | 2017-08-15 | A kind of high luminous intensity burst of ultraviolel white light LEDs and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710695976.9A CN107256920A (en) | 2017-08-15 | 2017-08-15 | A kind of high luminous intensity burst of ultraviolel white light LEDs and preparation method thereof |
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| CN107256920A true CN107256920A (en) | 2017-10-17 |
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| CN201710695976.9A Pending CN107256920A (en) | 2017-08-15 | 2017-08-15 | A kind of high luminous intensity burst of ultraviolel white light LEDs and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638115A (en) * | 2018-11-14 | 2019-04-16 | 五邑大学 | Imitative sodium yellow light LED lamp bead and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764189A (en) * | 2009-12-29 | 2010-06-30 | 山西乐百利特科技有限责任公司 | White light LED |
| CN101899302A (en) * | 2010-07-09 | 2010-12-01 | 浙江大学 | Near ultraviolet excited white light fluorescent powder and preparation method thereof |
| CN102005519A (en) * | 2010-09-15 | 2011-04-06 | 山东华光光电子有限公司 | Method for packaging high-power white LED with high luminous efficiency |
| CN102827604A (en) * | 2012-09-20 | 2012-12-19 | 电子科技大学 | Ultraviolet-excited white light phosphor for LED (light-emitting diode) and preparation method thereof |
| CN103311406A (en) * | 2013-05-11 | 2013-09-18 | 东莞市中之光电科技有限公司 | Packaging process for white light-emitting diodes (LEDs) |
| CN103509554A (en) * | 2012-06-27 | 2014-01-15 | 中国科学院上海硅酸盐研究所 | Fluorescent powder material for ultraviolet exciting white light of white LED (Light Emitting Diode) and preparation method thereof |
| CN104017526A (en) * | 2014-05-29 | 2014-09-03 | 绍兴光彩显示技术有限公司 | Fluorescent-powder dispensing glue for white-light SMD nixie tube and application method thereof |
| CN104804738A (en) * | 2015-05-18 | 2015-07-29 | 厦门砺德光电科技有限公司 | Near-ultraviolet-excited white-light LED (light-emitting diode) fluorescent powder and preparation method thereof |
| CN104818021A (en) * | 2015-04-09 | 2015-08-05 | 长安大学 | Near-UV excited single matrix white phosphor and preparation method thereof |
| CN105131945A (en) * | 2015-09-24 | 2015-12-09 | 重庆文理学院 | Single-matrix fluorescent powder for white-light LED (Light Emitting Diode) and preparation method of single-matrix fluorescent powder |
-
2017
- 2017-08-15 CN CN201710695976.9A patent/CN107256920A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764189A (en) * | 2009-12-29 | 2010-06-30 | 山西乐百利特科技有限责任公司 | White light LED |
| CN101899302A (en) * | 2010-07-09 | 2010-12-01 | 浙江大学 | Near ultraviolet excited white light fluorescent powder and preparation method thereof |
| CN102005519A (en) * | 2010-09-15 | 2011-04-06 | 山东华光光电子有限公司 | Method for packaging high-power white LED with high luminous efficiency |
| CN103509554A (en) * | 2012-06-27 | 2014-01-15 | 中国科学院上海硅酸盐研究所 | Fluorescent powder material for ultraviolet exciting white light of white LED (Light Emitting Diode) and preparation method thereof |
| CN102827604A (en) * | 2012-09-20 | 2012-12-19 | 电子科技大学 | Ultraviolet-excited white light phosphor for LED (light-emitting diode) and preparation method thereof |
| CN103311406A (en) * | 2013-05-11 | 2013-09-18 | 东莞市中之光电科技有限公司 | Packaging process for white light-emitting diodes (LEDs) |
| CN104017526A (en) * | 2014-05-29 | 2014-09-03 | 绍兴光彩显示技术有限公司 | Fluorescent-powder dispensing glue for white-light SMD nixie tube and application method thereof |
| CN104818021A (en) * | 2015-04-09 | 2015-08-05 | 长安大学 | Near-UV excited single matrix white phosphor and preparation method thereof |
| CN104804738A (en) * | 2015-05-18 | 2015-07-29 | 厦门砺德光电科技有限公司 | Near-ultraviolet-excited white-light LED (light-emitting diode) fluorescent powder and preparation method thereof |
| CN105131945A (en) * | 2015-09-24 | 2015-12-09 | 重庆文理学院 | Single-matrix fluorescent powder for white-light LED (Light Emitting Diode) and preparation method of single-matrix fluorescent powder |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638115A (en) * | 2018-11-14 | 2019-04-16 | 五邑大学 | Imitative sodium yellow light LED lamp bead and preparation method thereof |
| CN109638115B (en) * | 2018-11-14 | 2020-02-21 | 五邑大学 | Sodium-imitated yellow light LED lamp bead and preparation method thereof |
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Application publication date: 20171017 |
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