CN107251209A - Manufacture method, flip-chip fixing body and the first supply-type underfill resin combination of flip-chip fixing body - Google Patents
Manufacture method, flip-chip fixing body and the first supply-type underfill resin combination of flip-chip fixing body Download PDFInfo
- Publication number
- CN107251209A CN107251209A CN201680011258.9A CN201680011258A CN107251209A CN 107251209 A CN107251209 A CN 107251209A CN 201680011258 A CN201680011258 A CN 201680011258A CN 107251209 A CN107251209 A CN 107251209A
- Authority
- CN
- China
- Prior art keywords
- flip
- supply
- fixing body
- chip fixing
- resin combination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 94
- 239000011347 resin Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 229910000679 solder Inorganic materials 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 40
- 239000003822 epoxy resin Substances 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 25
- 150000004982 aromatic amines Chemical class 0.000 claims abstract description 16
- 230000009257 reactivity Effects 0.000 claims abstract description 15
- 230000004907 flux Effects 0.000 claims abstract description 8
- 239000011256 inorganic filler Substances 0.000 claims abstract description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 6
- 239000011342 resin composition Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 58
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 19
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 12
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 3
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 239000007822 coupling agent Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 7
- 229910000077 silane Inorganic materials 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 13
- -1 phenol aldehyde Chemical class 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 9
- 238000007711 solidification Methods 0.000 description 8
- 230000008023 solidification Effects 0.000 description 8
- 229930185605 Bisphenol Natural products 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 150000002924 oxiranes Chemical class 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 229960003540 oxyquinoline Drugs 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000013008 thixotropic agent Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 2
- HGXVKAPCSIXGAK-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine;4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N.CCC1=CC(C)=C(N)C(CC)=C1N HGXVKAPCSIXGAK-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003205 fragrance Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- PBWHJRFXUPLZDS-UHFFFAOYSA-N (1-Ethylpropyl)benzene Chemical compound CCC(CC)C1=CC=CC=C1 PBWHJRFXUPLZDS-UHFFFAOYSA-N 0.000 description 1
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 241000588769 Proteus <enterobacteria> Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention provides the manufacture method that can suppress that the flip-chip fixing body of hole is produced in underfill resin combination using first supply-type flip-chip bond technique.The manufacture method of the flip-chip fixing body includes：(1) it is being arranged at the connection copper bump electrode of semiconductor element and is being arranged at the process that solder layer is set at least one of connecting electrode of circuit substrate；(2) to the process of first supply-type underfill resin combination of the supply comprising (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler, (D) silane coupler and (E) solder flux on circuit substrate；(3) semiconductor element and circuit substrate are thermally compressed, and after connection is heated more than 1 second with copper bump electrode and connecting electrode with temperature more than solder melt point temperature, when reaching the reactivity of particular range of resin combination, the process for carrying out solder connection；And (4) make the process of resin composition under specific pressurization.
Description
Technical field
The flip-chip fixing body manufactured the present invention relates to the manufacture method of flip-chip fixing body, using the manufacture method
And the first supply-type underfill resin combination for the manufacture method.
Background technology
In recent years, as the semiconductor core of the densification of the further wiring for coping with electronic equipment etc., high frequency
The mounting means of piece, what is utilized is flip-chip bond.In general, in flip-chip bond, being filled out using referred to as bottom
Fill material sealing semiconductor chips and the gap of substrate of thing.
Generally, in flip-chip bond, after semiconductor chip and substrate are engaged using solder etc., in semiconductor core
The semiconductive resin sealing compositions of the gap filling Thermocurable of piece and substrate are underfill (hereinafter referred to as " rear supply
Type ").However, in recent years, first, underfill being coated on after substrate, mounting semiconductor chip, filled out while carrying out bottom
The solidification of agent and the connection of semiconductor chip and substrate are filled, it is possible thereby to shorten process and shorten hardening time, its result is enabled
Attracted attention with the first supply-type flip-chip bond technique that low cost and low energy make, the encapsulant to being adapted to the technique
The requirement of resin combination (hereinafter referred to as " first supply-type underfill with resin combination ") is uprised.
With the further raising of the bump density of flip-chip in recent years, in the first supply-type flip-chip bond work
The problem of there is residual porosity (bubble) in first supply-type underfill resin combination in skill.It is public in order to solve the problem
A kind of manufacture method of semiconductor device (patent document 1) is opened, it has：It will form with the leading section formed by solder
The semiconductor chip of projected electrode contraposition process on substrate is pointed to via grafting material；It is heated to more than melt solder point
Temperature, the curing degree of above-mentioned grafting material is set to less than 40%, makes the projected electrode of above-mentioned semiconductor chip and above-mentioned base
The electrode engagement process of the electrode portion melting engagement of plate；By curing degree for less than 40% above-mentioned grafting material under pressured atmosphere
Heat and remove the hole removal step of hole.
However, the cement used in the manufacture method of above-mentioned semiconductor device is substantially to use acid anhydrides as solid
Agent, using imidazolium compounds as curing accelerator (patent document 1 the 0052nd, 0055,0060 paragraph), therefore exist hold
The problem of easily causing the gelation of grafting material, can not fully suppress the generation of hole.And then, due to lacking the steady of grafting material
It is qualitative, therefore cure under pressure baking oven (patent text is also operated according to complicated step in the presence of having in hole removal step
Offer 1 the 0054th paragraph) the problem of.Herein, although describing grafting material can be desired by reaching containing thixotropic agent
Viscosity behavior (the 0026th paragraph of patent document 1), if thixotropic agent be more than 20 weight %, the row of grafting material can be reduced
Except property (the 0028th paragraph of patent document 1), but contain 40.6% thixotropic agent (patent text in embodiment 1, embodiment 2
Offer 1 the 0052nd, 0055,0060 paragraph).So, the grafting material of prior art is if not with highly unstable
The composition of removing property, then speculate can not by the curing degree after electrode engagement, reliability test, and therewith produce have to by
The problem of according to complicated step to operate cure under pressure baking oven.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2013-123033 publications
The content of the invention
The invention problem to be solved
It is an object of the present invention to provide first supply-type can be suppressed using first supply-type flip-chip bond technique
The manufacture method of the flip-chip fixing body of hole is produced in underfill resin combination and is installed for the flip-chip
The first supply-type underfill resin combination of the manufacture method of body.
Means for solving the problems
The present invention relates to the manufacturer of the flip-chip fixing body by solving above mentioned problem with following composition
Method, flip-chip fixing body and first supply-type underfill resin combination.
(1) a kind of manufacture method of flip-chip fixing body, it is characterised in that it is will to be arranged at the company of semiconductor element
Connect with copper bump electrode and be arranged at circuit substrate connecting electrode it is opposed and using be arranged at semiconductor element connection use
Copper bump electrode and be arranged at circuit substrate connecting electrode solder connection by mounting semiconductor element on circuit substrate,
Again with resin by the manufacture method of circuit substrate and the flip-chip fixing body of the gap seals of semiconductor element,
The manufacture method of the flip-chip fixing body includes successively：
(1) semiconductor element connection with least one of connecting electrode of copper bump electrode and circuit substrate
It is the process of 210~250 DEG C of high melting point solder layer to set fusing point；
(2) to supply on circuit substrate comprising (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler,
(D) process of the first supply-type underfill resin combination of silane coupler and (E) solder flux；
(3) semiconductor element and circuit substrate are thermally compressed, and by the connection of semiconductor element copper bump electrode and electricity
After the connecting electrode of base board is heated more than 1 second with temperature more than solder melt point temperature, first supply-type underfill is used
When the reactivity of resin combination reaches more than 0.1 and less than 25%, the process for carrying out solder connection；And
(4) consolidate under pressurization of the pressure by more than 0.6MPa the first supply-type underfill resin combination supplied
The process of change.
(2) manufacture method of the flip-chip fixing body according to above-mentioned (1), wherein, (B) composition is selected from chemical formula
(7) it is at least one kind of in the aromatic amine curing agent shown in aromatic amine curing agent and chemical formula (8) shown in.
[changing 1]
[changing 2]
(3) manufacture method of the flip-chip fixing body according to above-mentioned (1) or (2), wherein, (A) composition be selected from
It is at least one kind of in bisphenol f type epoxy resin, bisphenol A type epoxy resin, aminobenzene phenol-type epoxy resin and naphthalene type epoxy resin.
(4) a kind of flip-chip fixing body, it utilizes the flip-chip fixing body any one of above-mentioned (1)~(3)
Manufacture method manufacture.
(5) the first supply of the manufacture method of a kind of flip-chip fixing body for any one of above-mentioned (1)~(3)
Type underfill resin combination, it includes (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler, (D)
Silane coupler and (E) solder flux,
Viscosity of the first supply-type underfill resin combination at 25 DEG C of temperature is 10~100Pas.
(6) the first supply-type underfill resin combination according to above-mentioned (5), wherein, (E) composition is 8- hydroxyls
Base quinoline, and (E) composition is 0.5~3 mass parts relative to the first mass parts of supply-type underfill resin combination 100.
(7) a kind of first supply-type flip-chip fixing body, there is the first supply-type bottom described in above-mentioned (5) or (6) to fill out for it
Fill the solidfied material with resin combination.
Invention effect
According to (1) of the invention, using the teaching of the invention it is possible to provide underfill can be suppressed using first supply-type flip-chip bond technique
With the manufacture method for the flip-chip fixing body that hole is produced in resin combination.
According to of the invention (4), (7), using the teaching of the invention it is possible to provide being manufactured using first supply-type flip-chip bond technique, inhibit bottom
The flip-chip fixing body of hole is produced in portion's resin for filling composition.
According to (5) of the invention, using the teaching of the invention it is possible to provide underfill can be suppressed using first supply-type flip-chip bond technique
With the first supply-type underfill resin combination that hole is produced in resin combination.
Brief description of the drawings
Fig. 1 is expression TCB (Thermal-Compression-Bonding：Hot press) profile A temperature profile
Figure.
Fig. 2 is the figure for the temperature profile for representing TCB profiles B.
Fig. 3 is the figure for the temperature profile for representing TCB profiles C.
Fig. 4 is the figure for the temperature profile for representing TCB profiles D.
Fig. 5 is the figure for the temperature profile for representing TCB profiles E.
Fig. 6 is the figure for the temperature profile for representing TCB profiles F.
Fig. 7 is formed with the photo of the sample of alloy-layer for expression in section.
Fig. 8 is the schematic diagram for illustrating (1) process.
Fig. 9 is one of the schematic diagram for illustrating (1)~(4) process.
Figure 10 is one of the schematic diagram for illustrating (1)~(4) process.
Figure 11 is one of the schematic diagram for illustrating (1)~(4) process.
Embodiment
(manufacture method of flip-chip fixing body)
The manufacture method of the flip-chip fixing body of the present invention, it is characterised in that it is will to be arranged at semiconductor element
Connection copper bump electrode and the connecting electrode for being arranged at circuit substrate are opposed and utilize the connection for being arranged at semiconductor element
With the solder connection of copper bump electrode and the connecting electrode for being arranged at circuit substrate by mounting semiconductor element in circuit substrate
Above, again with resin by the manufacture method of circuit substrate and the flip-chip fixing body of the gap seals of semiconductor element,
The manufacture method of the flip-chip fixing body includes successively：
(1) semiconductor element connection with least one of connecting electrode of copper bump electrode and circuit substrate
It is the process of 210~250 DEG C of solder layer to set fusing point；
(2) to supply on circuit substrate comprising (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler,
(D) process of the first supply-type underfill resin combination of silane coupler and (E) solder flux；
(3) semiconductor element and circuit substrate are thermally compressed, and by the connection of semiconductor element copper bump electrode and electricity
After the connecting electrode of base board is heated more than 1 second with temperature more than solder melt point temperature, first supply-type underfill is used
When the reactivity of resin combination reaches more than 0.1 and less than 25%, the process for carrying out solder connection；And
(4) consolidate under pressurization of the pressure by more than 0.6MPa the first supply-type underfill resin combination supplied
The process of change.
The present invention is to use the connection copper bump electrode for being arranged at semiconductor element and the connection for being arranged at circuit substrate
Electrode contraposition simultaneously the connection copper bump electrode of semiconductor element and is arranged at the connecting electrode of circuit substrate using being arranged at
Solder connection by mounting semiconductor element on circuit substrate, it is with resin that the space of circuit substrate and semiconductor element is close again
The manufacture method of the flip-chip fixing body of envelope, uses the first supply of connection copper bump electrode especially on semiconductor element
Manufacture method used in type flip-chip bond technique.
(1) just semiconductor element connection with the connecting electrode of copper bump electrode and circuit substrate at least one on
For fusing point is set for the solder in the process of 210~250 DEG C of solder layer, if fusing point is too low, when sometimes because of component actuation
Heating make melt solder and produce maloperation, therefore be easily restricted use environment, if in addition, fusing point is too high, in peace
The thermic load on part during dress is uprised, and the component for allowing to use is restricted, as long as therefore make fusing point for 210~250 DEG C i.e.
Can, it is not particularly limited, from the viewpoint of without Pb, preferably Sn-Ag systems, Sn-Cu systems or Sn-Ag-Cu systems.In addition,
In a substrate, epoxy resin, glass-epoxy resin, polyimide resin etc. can be enumerated, but is not limited to this.
(2) for including (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic fill to supply on circuit substrate
The first supply-type underfill of agent, (D) silane coupler and (E) solder flux is with resin combination (hereinafter referred to as underfill tree
Oil/fat composition) process used in first supply-type underfill resin combination, will be described later.
As the method to the first supply-type underfill resin combination of supply on circuit substrate, can enumerate distributor,
Screen printing etc..
(3) just semiconductor element and circuit substrate are thermally compressed, and by the connection of semiconductor element with copper bump electrode and
After the connecting electrode of circuit substrate is heated more than 1 second with temperature more than solder melt point temperature, first supply-type underfill
When reaching more than 0.1 and less than 25% with the reactivity of resin combination, for the thermo-compression bonding in the process of progress solder connection,
If being preferred from the viewpoint of temperature, the controlling of pressure, production using flip chip bonder.In addition, in solder
It is preferred from the viewpoint of good solder zygosity when temperature more than melting temperature is higher than fusing point 20~50 DEG C.First
The reactivity of supply-type underfill resin combination use TCB before and after underfill resin combination differential scanning
Heat analysis (DSC) determines (programming rate：10 DEG C/min), tried to achieve using the heating peak area before and after heating according to following formula.
{ 1- (caloric value after TCB)/(caloric value before TCB) } × 100 (%)
Caloric value after underfill for example before TCB is 100J/g, TCB with the caloric value of resin combination is 80J/
In the case of g, the reactivity as (1-80/100) × 100=20%.Analysis software (such as NETZSCH companies can be utilized
The incidental software names of DSC processed：Proteus series) easily represent caloric value.
(4) work of underfill resin composition supplied is just made under pressurization of the pressure by more than 0.6MPa
For pressure in sequence, from the viewpoint of the hole of reduction underfill resin combination, preferably more than 0.6MPa, from
From the viewpoint of secure context in structure, preferably below 1.0MPa.
The schematic diagram of one of the manufacture method for illustrating flip-chip fixing body of the invention is shown in Fig. 8~11.
Show to be used to illustrate one of the schematic diagram of (1) process in Fig. 8.Fig. 8 upper figure is the connection copper in semiconductor element (Die)
The process that solder layer (Solder) is set on bump electrode (Copper bump), Fig. 8 figure below is in circuit substrate
(Substrate) process that solder layer (Solder) is set in connecting electrode (Electrode).
Show to be used to illustrate one of the schematic diagram of (1)~(4) process in Fig. 9.Fig. 9 is in semiconductor element (Die)
The connection example that solder layer (Solder) is set on copper bump electrode (Copper bump).First, as the 1 of Fig. 9, (1)
In connection setting solder layer (Solder) on copper bump electrode (Copper bump) of semiconductor element (Die).Then, such as
The 2 of Fig. 9 like that, to circuit substrate (Substrate) on the first supply-type underfill resin combination (Pre- of supply
applied underfill).Afterwards, as the 3 of Fig. 9, (3) are by semiconductor element (Die) and circuit substrate
(Substrate) it is thermally compressed using flip chip bonder (flip chip bonder), and by semiconductor element (Die) company
The connecting electrode (Electrode) with copper bump electrode (Copper bump) and circuit substrate (Substrate) is connect with solder
After more than melting temperature temperature is heated more than 1 second, the reactivity of first supply-type underfill resin combination reach 0.1 with
It is upper and when less than 25%, carry out solder (Solder) connection.Now, hole (Void) can be produced.Finally, as the 4 of Fig. 9,
(4) in pressure：Make the first supply-type underfill resin combination supplied under more than 0.6MPa pressurization (Pressure)
(Pre-applied underfill) solidifies (Curing).Using the pressurization, hole is produced in (C) process, also may be used
So that hole to be discharged from first supply-type underfill with resin combination.
Show to be used to illustrate one of the schematic diagram of (1)~(4) process in Figure 10.Fig. 9 is in circuit substrate
(Substrate) example of solder layer (Solder) is set in connecting electrode (Electrode).In addition, it is same with Fig. 9
Sample.
Show to be used to illustrate one of the schematic diagram of (1)~(4) process in Figure 11.Fig. 9 is in semiconductor element (Die)
Connection is with setting solder layer (Solder) on copper bump electrode (Copper bump) and in circuit substrate (Substrate) company
Connect with the example that solder layer (Solder) is also provided with electrode (Electrode).In addition, it is same with Fig. 9.
(first supply-type underfill resin combination)
The underfill of the present invention is inorganic comprising (A) epoxy resin, (B) aromatic amine curing agent, (C) with resin combination
Filler, (D) silane coupler and (E) solder flux,
The underfill resin combination is in temperature：Viscosity at 25 DEG C is 10~100Pas and is used in above-mentioned
Flip-chip fixing body manufacture method in.
(A) composition assigns the durability after cementability, solidification with resin combination to underfill., can as (A) composition
Enumerate bisphenol A type epoxy resin, brominated bisphenol a type epoxy resin, bisphenol f type epoxy resin, naphthalene type epoxy resin, biphenyl type ring
Oxygen tree fat, phenol aldehyde type epoxy resin, cycloaliphatic epoxy resin, ether system or polyethers system epoxy resin, the chemical combination of the ring containing oxirane
Thing etc., if selected from bisphenol f type epoxy resin, bisphenol A type epoxy resin, aminobenzene phenol-type epoxy resin and naphthalene type epoxy resin
In it is at least one kind of, then be preferred from the viewpoint of the viscosity of underfill resin combination.
As bisphenol f type epoxy resin, preferably represented with formula (1).
[changing 3]
In formula, n represents average value, preferably 0~10, particularly preferably 0~4.Epoxide equivalent is preferably 160~900g/
eq。
As bisphenol A type epoxy resin, preferably represented with formula (2).
[changing 4]
In formula, m represents average value, preferably 0~10, particularly preferably 0~4.Epoxide equivalent is preferably 165~900g/
eq。
Aminobenzene phenol-type epoxy resin is preferably represented with formula (3).
[changing 5]
As the commercially available product of (A) composition, the DIC bisphenol f type epoxy resin (names of an article can be enumerated：EXA-830CRP), DIC
Bisphenol A type epoxy resin (the name of an article processed：EXA-850CRP), the DIC naphthalene type epoxy resins (name of an article：HP -4032D), Mitsubishi
The length of schooling aminobenzene phenol-type epoxy resin (name of an article：JER630) etc..(A) composition may be used singly or in combination of two or more kinds.
(B) composition assigns ability to cure to underfill with resin combination.As (B) composition, the solidification of phenol system can be enumerated
Agent, anhydride curing agent, imidazoles system curing agent etc., still, from the aspect of control reactivity, preferably amine system curing agent.Especially
Optimization aromatic amine system curing agent, carry out solder connection process in thermo-compression bonding when, afterwards heating crimping when solder
Connectivity, hole inhibition are excellent.In addition, as aromatic series amine system curing agent, it is excellent from cementability, reliability aspect
Choosing has primary amino radical or secondary amino group in the molecular structure.Aromatic amines compound preferably includes the fragrance with 1 aromatic ring
Race's amines and/or the aromatic amines compound with multiple aromatic rings.
As the aromatic amines compound with 1 aromatic ring, m-phenylene diamine (MPD) etc. can be enumerated.
As the aromatic amines compound with multiple aromatic rings, diaminodiphenyl-methane, diaminourea two can be enumerated
R is that carbon number is 2 in compound shown in phenylsulfone etc., preferred formula (4) or formula (5), more preferably formula (4) or formula (5)
The compound of alkyl.
[changing 6]
[changing 7]
(in formula, the alkyl that R represents hydrogen or carbon number is 1~5)
(B) composition includes the aromatic amines compound with 1 aromatic ring and/or the fragrance with multiple aromatic rings
Race's amines, relative to total 100 mass parts of above-mentioned aromatic amines compound, the aromatic amine chemical combination with multiple phenyl ring
When thing is 20~100 mass parts, from the higher sight of hole inhibition when reactivity controlling when making TCB, heating pressurization
Point sets out, and is preferred.(B) composition is more preferably selected from 4,4 '-di-2-ethylhexylphosphine oxide (2- second shown in chemical formula (7)
Base aniline) and chemical formula (8) shown in diethyl toluene diamine in it is at least one kind of.
[changing 8]
[changing 9]
As the commercially available product of (B) composition, Japanese chemical drug aromatic amine curing agent (4,4 '-di-2-ethylhexylphosphine oxide (2- can be enumerated
MEA), trade name：KAYAHARD A-A), Albemarle diethyl toluene diamine curing agent (trade names：
ETHACURE100) etc..(B) composition may be used singly or in combination of two or more kinds.
(C) composition reduces the thermal coefficient of expansion of underfill resin combination.As (C) composition, dioxy can be enumerated
SiClx, aluminum oxide, silicon nitride, aluminium nitride, mica, white carbon etc., from the underfill resin combination after reduction solidification
From the viewpoint of thermal coefficient of expansion and cost, preferred silica.Silica can use amorphous silicon di-oxide, crystallization
Property silica, fused silica, the various silica used in the art such as silica are crushed, from reduction
Underfill after solidification is with setting out in terms of the thermal coefficient of expansion of resin combination, preferred amorphous silicon di-oxide.From half-and-half
From the viewpoint of the fillibility in the gap of conductor chip and substrate, the preferred average grain diameter of particle diameter of (C) composition is 0.1~2.0 μm,
More preferably 0.1~1.0 μm.In addition, the shape of (C) composition is not particularly limited, spherical, flakey, unsetting etc. can be enumerated,
It is preferably spherical from the viewpoint of the mobility of underfill resin combination.As the commercially available product of (C) composition, it can enumerate
Admatechs silicon dioxide granule (the names of an article：SOE2) etc..(C) composition may be used singly or in combination of two or more kinds.
(D) composition improves the adaptation of underfill resin combination.As (D) composition, 3- epoxies third can be enumerated
Epoxide propyl trimethoxy silicane, 3- TSL 8330s, vinyltrimethoxy silane, to styryl three
Methoxy silane, 3- methacryloyloxypropyl methyls trimethoxy silane, 3- acryloxypropyl trimethoxy silicon
Alkane, 3- ureas propyl-triethoxysilicane, 3-mercaptopropyi trimethoxy silane, double (tri-ethoxy silylpropyls) four vulcanization
Thing, 3- isocyanates propyl-triethoxysilicanes etc., from the viewpoint of adaptation, preferred 3- glycidoxypropyl groups front three
TMOS, 3- TSL 8330s.As the commercially available product of (D) composition, SHIN-ETSU HANTOTAI's chemical industry system can be enumerated
KBM403, KBE903, KBE9103 etc..(D) composition may be used singly or in combination of two or more kinds.
(E) composition improves the solder wettability of underfill resin combination.As (E) composition, formula (6) can be enumerated
Shown 8-hydroxyquinoline, 6- oxyquinolines, 4- oxyquinolines etc., preferably 8-hydroxyquinoline.(E) composition can individually make
With or and use two or more.
[changing 10]
The underfill of the present invention is included relative to underfill with resin combination
During (A) composition of 0.5~35 mass parts, the viewpoint of the durability after cementability, solidification from underfill resin combination
Set out, be preferred.
Underfill resin combination is included relative to the composition that the mass parts of composition (A) 100 are 30~120 mass parts
(B) it is preferred from the viewpoint of hole inhibition when reactivity controlling when making TCB, heating pressurization is higher when
's.
Underfill resin combination is included relative to the composition that the mass parts of composition (A) 100 are 160~400 mass parts
(C) when, from the thermal expansion system of the underfill resin combination after the mobility of underfill resin combination and solidification
It is preferred from the viewpoint of number reduction.
Underfill resin combination is included relative to the composition that the mass parts of composition (A) 100 are 0.05~2 mass parts
(D) it is preferred from the viewpoint of the adaptation of underfill resin combination when.
It is 0.5~3 matter that underfill resin combination, which is included relative to the mass parts of underfill resin combination 100,
It is preferred from the viewpoint of solder wettability, hole from underfill resin combination suppress when measuring (E) composition of part
's.
The present invention underfill with can be in the further root of scope for not damaging the object of the invention in resin combination
According to needing to coordinate pigment, dyestuff, defoamer, antioxidant, other additives such as carbon black etc., more and then coordinate organic solvent etc..
But, in the present invention, suppress the viewpoint of the foaming of underfill resin combination when being coated from heating atmosphere
Set out, preferably not comprising lower boiling organic solvent.
The present invention underfill resin combination for example can by side by (A) composition~(E) composition and other add
Plus agent etc. carries out heating side at the same time or separately and it stirred, melted, mix, disperse to obtain as needed.Especially into
Divide (B) in the case of solid, if it is directly coordinated with solid state, resin viscosity rises, operability significantly change
Difference, therefore preferably advancing with heating makes it be mixed again with composition (A) after liquefying.It is used as their mixing, stirring, scattered etc.
Device, is not particularly limited, and can use and possess stirring, the mixing and kneading machine of heater, three-roll mill, ball mill, planetary stirs
Mix device, ball mill etc..Alternatively, it is also possible to use these devices are appropriately combined.
The underfill resin combination of the present invention is in temperature：Viscosity at 25 DEG C is 10~100Pas.Here, viscous
Degree utilizes eastern machine industry viscosimeter (model：TV-20 types) it is measured.
The present invention underfill resin combination pressurized, heated solidification preferably more than 0.6MPa, 150~200 DEG C
Under conditions of carry out 30~240 minutes.
(flip-chip fixing body)
The flip-chip fixing body of the present invention is manufactured using the manufacture method of above-mentioned flip-chip fixing body.In addition,
The flip-chip fixing body of the present invention has the solidfied material of above-mentioned first supply-type underfill resin combination.
Embodiment
Using embodiment, the present invention will be described, still, and the present invention is simultaneously not limited to the examples restriction.Said
Bright, below in an example, part, % are unless otherwise specified, then it represents that parts by weight, weight %.
(embodiment 1~28, comparative example 1~24)
According to the formula shown in table 1~4, using three-roll mill, underfill resin combination is prepared.
(evaluation of viscosity)
Use eastern machine industry viscosimeter (model：TV-20 types) prepared underfill tree is determined at 25 DEG C
The viscosity of oil/fat composition.Result is shown in table 1~4.
(test film manufacturing condition)
Make the experiment chip for evaluating prepared underfill with resin combination.First, in experiment core
Piece (Si sizes：7.3mm (width) × 7.3mm (length) × 0.125mm (thickness)) on, prepare connection copper bump electrode
(to salient point：Solder layer, salient point number are formed on the Cu posts of 30 μm of (width) × 30 μm (length) × 30 μm (height)：1048th, face battle array
Configuration) and for carrying the organic resin substrate (substrate size of pilot chip：187.5mm (width) × 64.0mm (length) ×
0.36mm (thickness), connecting electrode：Cu/OSP(Organic Solderbility Preservatives：Organic guarantor welds film)
Processing).The solder formed on Cu posts is Sn-Ag systems solder (fusing point：About 223 DEG C).
Use Musashi Engineering company system distributor (models：Super Σ CM II V5), with 23G sizes
Prepared underfill is coated in organic resin substrate by pin with resin combination with X-pattern shape.
Then, using Panasonic Factory Solutions company system flip chip bonder (models：FCB3), it will try
Test with chip and organic resin substrate heating crimping (TCB：Thermal-Compression-Bonding), experiment use is carried out
The connection of connection copper bump electrode and the connecting electrode of organic resin substrate of chip.Now, by the rank of flip chip bonder
Duan Wendu is set as 60 DEG C, and TCB profiles are set under the conditions of 6 of A, B, C, D, E, F.6 conditions are shown in Fig. 1~6
TCB temperature profiles.The TCB profiles are surveyed in experiment with addition thermocouple (50 μm of φ) between chip and organic resin substrate
It is fixed.Profile A~E maximum temperature is 262 DEG C, and profile F maximum temperature is 155 DEG C.In profile A, more than solder melt point
Temperature heat 1.2 seconds, in profile B, with it is more than solder melt point temperature heat 3.8 seconds, in profile C, with solder melt point with
On temperature heat 6.9 seconds, in profile D, heated 10.9 seconds with temperature more than solder melt point, it is molten with solder in profile E
The temperature of the point above is heated 15.8 seconds, and in profile F, temperature more than solder melt point is not reached.The TCB profiles of 6 conditions
Pressure be 40N.
By by TCB test film be added to group enter following temperature profile A~C, temperature profile A~D pressure baking oven (plus
Heat pressurization baking oven) in, make underfill resin composition.
Temperature profile A：With 30 minutes from room temperature to 165 DEG C, after 165 DEG C are kept for 90 minutes, room temperature is cooled to.
Temperature profile B：With 30 minutes from room temperature to 165 DEG C, after 165 DEG C are kept for 60 minutes, room temperature is cooled to.
Temperature profile C：With 30 minutes from room temperature to 165 DEG C, after 165 DEG C are kept for 30 minutes, room temperature is cooled to.
Pressure profile A：Pressure is raised since normal pressure while heating up and starting, the pressure in baking oven was made within 5 minutes
Power rises to 0.7MPa, starts decompression while the heat time terminates, pressure is reduced to normal pressure.
Pressure profile B：Pressure is raised since normal pressure while heating up and starting, the pressure in baking oven was made within 5 minutes
Power rises to 0.6MPa, starts decompression while the heat time terminates, pressure is reduced to normal pressure.
Pressure profile C：Pressure is raised since normal pressure while heating up and starting, the pressure in baking oven was made within 5 minutes
Power rises to 0.5MPa, starts decompression while the heat time terminates, pressure is reduced to normal pressure.
Pressure profile D：Pressure is raised since normal pressure while heating up and starting, the pressure in baking oven was made within 5 minutes
Power rises to 0.3MPa, starts decompression while the heat time terminates, pressure is reduced to normal pressure.
(measure of reactivity)
Determine the reactivity (unit of underfill resin combination：%).Use the underfill resin before and after TCB
The differential scanning calorimeter (DSC) of composition determines (programming rate：10 DEG C/min), using the heating peak area before and after heating,
According to formula：{ 1- (caloric value after TCB)/(caloric value before TCB) } × 100 (%), tries to achieve underfill resin combination
Reactivity.
(initial evaluation)
7 test films are made to each embodiment, comparative example.
《C-SAM is tested》
Using ultrasonic flaw detecting device, using bounce technique the test film made in each embodiment, comparative example is confirmed hole,
The generating state of layering.The measure is implemented to made test film.It will observe that the situation of white shadow is set on C-SAM images
For defective work.
《Plane lapping is tested》
In 7 made test films, 2 test films are taken out, only chip partial mill are removed.Then, it will remove
The part removed after chip of the organic resin substrate of chip is observed using light microscope (× 100, × 200), really
Recognize the existence of hole.It will observe that the situation of hole is set to bad more than 1 position.It is explained, in C-SAM examinations
In testing, in the case where confirming certified products, defective work two types, certified products, each 1 of defective work are seen
Examine.
《Solder is tested》
In 7 made test films, 2 test films are taken out, according to the junction surface that can observe chip and substrate
After mode is cut, it is ground, exposes the junction surface of chip and substrate.Then, using scanning electron microscope
(SEM) with the exposed junction surface of 1000 times of observations.Now, the situation for not forming alloy-layer at junction surface is set to bad.Give
To illustrate, in C-SAM experiments, in the case where confirming certified products, defective work two types, to certified products, unqualified
Each 1 of product are observed.Figure 7 illustrates the photo for the sheet material that alloy-layer is formed with section.As shown in Figure 7：Alloy-layer
Formed in solder, be particularly formed in the near interface and connecting electrode of copper bump electrode (Fig. 7 bottom) and solder
(Fig. 7 top) and the near interface of solder.
《Resistance value is tested》
7 made test films are determined with the resistance value resistance value determines pad.Test film is daisy chain architecture, will be aobvious
Show that the situation of 28~32 Ω resistance value is set to qualified.
《X-ray is observed》
There is open confirming terminal to the test film made in each embodiment, comparative example using X ray checking device
Bridge joint.The measure is implemented to the test film made by whole.Situation of the solder connection on the x-ray image between terminal is set
For defective work.
(MRT evaluations)
192 will be placed in constant temperature and humidity cabinet (30 DEG C/60%RH) as the test film (n=3) made by initial evaluation
After hour, iterated through 3 times in 260 DEG C of reflow ovens.
C-SAM experiments, resistance value experiment, X-ray observation are carried out in the same manner as initial evaluation.It is explained, for initial
The test film of the result difference of evaluation is evaluated without MRT.
Table 1
(test piece number/manufacture test film number)
1) the DIC bisphenol f type epoxy resins (name of an article：EXA-830CRP, epoxide equivalent：159g/eq)
2) DIC systems are double expects the A type epoxy resin (names of an article：EXA-850CRP, epoxide equivalent：173g/eq)
3) Mitsubishi Chemical's aminobenzene phenol-type epoxy resin (name of an article：JER630, epoxide equivalent：98g/eq)
4) the Japanese chemical drug aromatic amine curing agent (name of an article：KAYAHARD A-A, amine equivalent：64g/eq)
5) the Albemarle diethyl toluene diamines (name of an article：ETHACURE 100, amine equivalent：45g/eq)
6) Admatechs silicon dioxide granules (brilliant name：SOE2, average grain diameter：0.5μm)
7) SHIN-ETSU HANTOTAI's chemistry 3- glycidoxypropyltrime,hoxysilanes (name of an article processed：KBM403)
8) with Wako Pure Chemical Industries 8-hydroxyquinoline (grade：With 1 grade of light)
Table 2
Table 3
Table 4
Table 5
Table 6
9) the DIC naphthalene type epoxy resins (name of an article：HP-4032D, epoxide equivalent：()g/eq)
From table 1~6：During embodiment 1~28 make it that the void test of initial evaluation, connectivity experiment, MRT are evaluated
Void test, connectivity experiment result it is good.On the other hand, the too high comparative example 1 of reactivity at the end of TCB profiles~
4th, 15~20 hole is observed in initial evaluation.In the comparative example 5~14 of hypotony in heating pressurization baking oven,
Also hole is observed in initial evaluation.In the comparative example 21 without (E) composition, the connectivity in initial evaluation is poor.TCB
The comparative example 22 of temperature in profile too low (maximum temperature is 155 DEG C) also make it that the connectivity in initial evaluation is poor.Do not wrap
The result of resistance value and X-ray observation of the comparative example 23 containing (D) composition in initial evaluation is poor.Ratio not comprising (C) composition
Hole is observed in initial evaluation compared with example 24.
Industrial applicability
The present invention, which can be provided, to suppress first supply-type underfill using first supply-type flip-chip bond technique
With the manufacture method for the flip-chip fixing body that hole is produced in resin combination, the manufacturer for the flip-chip fixing body
The first supply-type underfill resin combination of method, and it is highly useful.
Claims (7)
1. a kind of manufacture method of flip-chip fixing body, it is characterised in that it is to use the connection for being arranged at semiconductor element
Copper bump electrode and the connecting electrode for being arranged at circuit substrate are opposed and convex with copper using the connection for being arranged at semiconductor element
The solder connection of connecting electrode of the point electrode with being arranged at circuit substrate is by mounting semiconductor element on circuit substrate, again use
Resin by the manufacture method of circuit substrate and the flip-chip fixing body of the gap seals of semiconductor element,
The manufacture method of the flip-chip fixing body includes successively：
(1) set in the connection of semiconductor element with least one of connecting electrode of copper bump electrode and circuit substrate
Fusing point is the process of 210~250 DEG C of solder layer；
(2) (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler, (D) silicon are included to supply on circuit substrate
The process of the first supply-type underfill resin combination of alkane coupling agent and (E) solder flux；
(3) semiconductor element and circuit substrate are thermally compressed, and by the connection of semiconductor element copper bump electrode and circuit base
After the connecting electrode of plate is heated more than 1 second with temperature more than solder melt point temperature, first supply-type underfill resin
When the reactivity of composition reaches more than 0.1 and less than 25%, the process for carrying out solder connection；And
(4) the first supply-type underfill resin composition for making to supply under pressurization of the pressure by more than 0.6MPa
Process.
2. the manufacture method of flip-chip fixing body according to claim 1, wherein, (B) composition is selected from chemical formula (7)
It is at least one kind of in aromatic amine curing agent shown in shown aromatic amine curing agent and chemical formula (8),
[changing 11]
[changing 12]
3. the manufacture method of flip-chip fixing body according to claim 1 or 2, wherein, (A) composition is selected from Bisphenol F
It is at least one kind of in type epoxy resin, bisphenol A type epoxy resin, aminobenzene phenol-type epoxy resin and naphthalene type epoxy resin.
4. a kind of flip-chip fixing body, it utilizes the manufacture of the flip-chip fixing body any one of claims 1 to 33
Method is manufactured.
5. a kind of first supply-type bottom of manufacture method for flip-chip fixing body according to any one of claims 1 to 3
Portion's resin for filling composition, it includes (A) epoxy resin, (B) aromatic amine curing agent, (C) inorganic filler, (D) silane
Coupling agent and (E) solder flux,
Viscosity of the first supply-type underfill resin combination at 25 DEG C of temperature is 10~100Pas.
6. first supply-type underfill resin combination according to claim 5, wherein, (E) composition is 8- hydroxyl quinolines
Quinoline, and (E) composition is 0.5~3 mass parts relative to the first mass parts of supply-type underfill resin combination 100.
7. a kind of first supply-type flip-chip fixing body, it has the first supply-type underfill tree described in claim 5 or 6
The solidfied material of oil/fat composition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015056935 | 2015-03-19 | ||
| JP2015-056935 | 2015-03-19 | ||
| PCT/JP2016/058064 WO2016148121A1 (en) | 2015-03-19 | 2016-03-15 | Method for manufacturing flip chip package, flip chip package, and resin composition for pre-application type underfills |
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| JP (1) | JP6800140B2 (en) |
| KR (1) | KR102455429B1 (en) |
| CN (1) | CN107251209B (en) |
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| CN109844020A (en) | 2016-10-14 | 2019-06-04 | 日立化成株式会社 | The manufacturing method of resin composition for encapsulating, electronic part apparatus and electronic part apparatus |
| WO2018181603A1 (en) * | 2017-03-31 | 2018-10-04 | 日立化成株式会社 | Liquid epoxy resin composition, semiconductor device, and method for producing semiconductor device |
| CN107293498B (en) * | 2017-07-03 | 2019-06-11 | 华进半导体封装先导技术研发中心有限公司 | A kind of flip-chip preparation method |
| JP6920723B2 (en) * | 2017-07-14 | 2021-08-18 | ナミックス株式会社 | NCF for pressure mounting |
| KR102455212B1 (en) * | 2017-12-18 | 2022-10-17 | 쇼와덴코머티리얼즈가부시끼가이샤 | Semiconductor device, semiconductor device manufacturing method and adhesive |
| TWI811215B (en) * | 2018-04-13 | 2023-08-11 | 日商力森諾科股份有限公司 | Sealing resin composition, electronic component apparatus and manufacturing method for electronic component apparatus |
| JP7406336B2 (en) | 2019-10-11 | 2023-12-27 | 三星電子株式会社 | Manufacturing method of semiconductor device |
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| JP2012057052A (en) * | 2010-09-09 | 2012-03-22 | Namics Corp | Epoxy resin composition |
| CN102453340A (en) * | 2010-10-21 | 2012-05-16 | 日立化成工业株式会社 | Thermosetting resin composition for sealing packing of semiconductor, and semiconductor device |
| CN104170070A (en) * | 2012-08-06 | 2014-11-26 | 积水化学工业株式会社 | Method for manufacturing semiconductor device and adhesive for mounting flip chip |
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| US7378523B2 (en) * | 2005-08-25 | 2008-05-27 | National Starch And Chemical Investment Holding Corporation | Quinolinols as fluxing and accelerating agents for underfill compositions |
| JP2008274083A (en) | 2007-04-27 | 2008-11-13 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition and semiconductor device |
| JP5557158B2 (en) | 2010-09-30 | 2014-07-23 | 信越化学工業株式会社 | Flip chip connecting underfill agent and method of manufacturing semiconductor device using the same |
| JP2013073955A (en) | 2011-09-26 | 2013-04-22 | Hitachi Chemical Co Ltd | Manufacturing method of circuit connection structure |
| JP6009860B2 (en) | 2011-11-09 | 2016-10-19 | 積水化学工業株式会社 | Manufacturing method of semiconductor device |
| CN105308730A (en) * | 2013-08-22 | 2016-02-03 | 积水化学工业株式会社 | Semiconductor adhesive |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012057052A (en) * | 2010-09-09 | 2012-03-22 | Namics Corp | Epoxy resin composition |
| CN102453340A (en) * | 2010-10-21 | 2012-05-16 | 日立化成工业株式会社 | Thermosetting resin composition for sealing packing of semiconductor, and semiconductor device |
| CN104170070A (en) * | 2012-08-06 | 2014-11-26 | 积水化学工业株式会社 | Method for manufacturing semiconductor device and adhesive for mounting flip chip |
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| KR102455429B1 (en) | 2022-10-14 |
| WO2016148121A1 (en) | 2016-09-22 |
| JPWO2016148121A1 (en) | 2017-12-28 |
| TW201707096A (en) | 2017-02-16 |
| TWI674633B (en) | 2019-10-11 |
| KR20170128224A (en) | 2017-11-22 |
| CN107251209B (en) | 2019-12-27 |
| JP6800140B2 (en) | 2020-12-16 |
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