CN107248497A - Solar silicon wafers detecting system - Google Patents
Solar silicon wafers detecting system Download PDFInfo
- Publication number
- CN107248497A CN107248497A CN201710496596.2A CN201710496596A CN107248497A CN 107248497 A CN107248497 A CN 107248497A CN 201710496596 A CN201710496596 A CN 201710496596A CN 107248497 A CN107248497 A CN 107248497A
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- CN
- China
- Prior art keywords
- resistance
- silicon wafers
- photovoltaic detector
- solar silicon
- detecting system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to solar silicon wafers production technical field, particularly solar silicon wafers detecting system, including photovoltaic detector, the photovoltaic detector is connected with A/D converter input, the A/D converter output end is connected with slave computer input, the slave computer output end is connected with photoelectric coupling unit for promoting inhibition input, and the photoelectric coupling unit for promoting inhibition output end is connected by magnetic valve with silicon chip aggregate-storing system.After said structure, the present invention can be contrasted data by setting two photovoltaic detectors, be can be very good to protect photovoltaic detector additionally by detection protection location, improved the precision of solar silicon wafers detection.
Description
Technical field
The present invention relates to solar silicon wafers production technical field, particularly a kind of solar silicon wafers detecting system.
Background technology
Silicon chip is the carrier of solar battery sheet, and the quality of Si wafer quality directly determines solar battery sheet conversion efficiency
Height, it is therefore desirable to supplied materials silicon chip is detected.The process is mainly used to carry out online some technical parameters of silicon chip
Measurement, these parameters mainly include silicon chip surface irregularity degree, minority carrier life time, resistivity, P/N types and micro-crack etc..The group is set
Back-up automatic loading/unloading, chip transmission, system combination part and four detection modules.Wherein, photovoltaic silicon wafer detector is to silicon chip
Surface irregularity degree is detected, while detecting the apparent parameters such as the size and diagonal of silicon chip；Microcrack zone module is used for
Detect the internal tiny crack of silicon chip；There are two detection modules, one of main test silicon lamellar body of on-line testing module in addition
Resistivity and silicon chip type, another module are used for the minority carrier life time for detecting silicon chip.Carrying out minority carrier life time and Resistivity testing
Before, it is necessary to which diagonal, micro-crack first to silicon chip are detected, and the damaged silicon chip of automatic rejection.Silicon chip detection device can
Auto loading and unloading piece, and defective work can be put into fixed position, so as to improve precision and efficiency of detecting.
The content of the invention
The technical problem to be solved in the invention is to provide a kind of high solar silicon wafers detecting system of accuracy.
To solve above-mentioned technical problem, solar silicon wafers detecting system of the invention, including photovoltaic detector, the light
Volt detector is connected with A/D converter input, and the A/D converter output end is connected with slave computer input, described
Slave computer output end is connected with photoelectric coupling unit for promoting inhibition input, and the photoelectric coupling unit for promoting inhibition output end passes through magnetic valve and silicon chip
Aggregate-storing system is connected.
Further, the photovoltaic detector is two.
Further, it is provided with detection protection location between the photovoltaic detector and A/D converter.
Further, the detection unit includes voltage comparator LM293, and one of photovoltaic detector passes through
Resistance R4 and electric capacity C3 series circuit ground connection, No. 2 of resistance R4 and electric capacity C3 intermediate connection point and voltage comparator LM293
Pin is connected, and power supply V1 is grounded by resistance R2 and resistance R3 series circuit, resistance R2 and resistance R3 intermediate connection points with
No. 3 of voltage comparator LM293 are connected with No. 5 pins, the resistance R3 two ends shunt capacitance C2；Another photovoltaic is detected
Instrument is grounded by resistance R1 and electric capacity C1 series circuit, resistance R1 and electric capacity C1 intermediate connection point and voltage comparator
LM293 No. 6 pins are connected, and No. 1 of the voltage comparator LM293 and No. 7 pins are connected with A/D converter input
Connect.
Further, the slave computer is connected by RS232 interfaces with host computer.
After said structure, data can be contrasted, led in addition by setting two photovoltaic detectors by the present invention
Cross detection protection location to can be very good to protect photovoltaic detector, improve the precision of solar silicon wafers detection.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the structured flowchart of solar silicon wafers detecting system of the present invention.
Fig. 2 detects the circuit theory diagrams of protection location for the present invention.
In figure：1 is photovoltaic detector, and 2 be detection protection location, and 3 be A/D converter, and 4 be slave computer, and 5 be photoelectric coupling
Unit, 6 be magnetic valve, and 7 be silicon chip aggregate-storing system, and 8 be RS232 interfaces, and 9 be host computer
Embodiment
As shown in figure 1, the solar silicon wafers detecting system of the present invention, including photovoltaic detector 1, the photovoltaic detector 1
It is connected with the input of A/D converter 3, the output end of A/D converter 3 is connected with the input of slave computer 4, the slave computer
4 output ends are connected with the input of photoelectric coupling unit for promoting inhibition 5, and the output end of photoelectric coupling unit for promoting inhibition 5 is stored up by magnetic valve 6 and silicon chip
Material system 7 is connected.
Further, in order to improve the accuracy and precision that silicon chip is detected, the photovoltaic detector 1 is two, so may be used
Contrasted with the data for gathering two photovoltaic detectors 1, if the data difference that two photovoltaic detectors are collected is larger,
Illustrate there is photovoltaic detector cisco unity malfunction to be used, it is necessary to change.
Further, in order to preferably protect photovoltaic detector, set between the photovoltaic detector 1 and A/D converter 3
It is equipped with detection protection location 2.As shown in Fig. 2 the detection unit includes voltage comparator LM293, one of photovoltaic
Detector is grounded by resistance R4 and electric capacity C3 series circuit, resistance R4 and electric capacity C3 intermediate connection point and voltage comparator
LM293 No. 2 pins are connected, and power supply V1 is grounded by resistance R2 and resistance R3 series circuit, in resistance R2 and resistance R3
Between tie point be connected with No. 3 of voltage comparator LM293 and No. 5 pins, the resistance R3 two ends shunt capacitance C2；Other one
Individual photovoltaic detector is grounded by resistance R1 and electric capacity C1 series circuit, resistance R1 and electric capacity C1 intermediate connection point and voltage
Comparator LM293 No. 6 pins are connected, No. 1 of the voltage comparator LM293 and No. 7 pins and A/D converter input
It is connected.No. 1 of the voltage comparator LM293 and No. 7 pins are grounded by electric capacity C5, and the 1 of the voltage comparator LM293
Number and No. 7 pins be connected by resistance R5 with power supply V1, power supply V1 be 5V.Wherein, In1 and In2 detects for photovoltaic detector
The test signal arrived.When the next machine testing is unqualified to Si wafer quality, then protection signal is produced, disconnect magnetic valve so that silicon
Piece aggregate-storing system stops storing.
Further, in order to upload and preserve silicon chip detection data, the slave computer 4 passes through RS232 interfaces 8 and host computer
9 are connected.
Although the foregoing describing the embodiment of the present invention, those skilled in the art should be appreciated that this
It is merely illustrative of, various changes or modifications can be made to present embodiment, without departing from the principle and essence of invention, sheet
The protection domain of invention is only limited by the claims that follow.
Claims (5)
1. a kind of solar silicon wafers detecting system, including photovoltaic detector, it is characterised in that：The photovoltaic detector turns with A/D
Parallel operation input is connected, and the A/D converter output end is connected with slave computer input, the slave computer output end and light
It is electrically coupled unit input to be connected, the photoelectric coupling unit for promoting inhibition output end is connected by magnetic valve with silicon chip aggregate-storing system.
2. according to the solar silicon wafers detecting system described in claim 1, it is characterised in that：The photovoltaic detector is two.
3. according to the solar silicon wafers detecting system described in claim 2, it is characterised in that：The photovoltaic detector turns with A/D
Detection protection location is provided between parallel operation.
4. according to the solar silicon wafers detecting system described in claim 3, it is characterised in that：The detection unit includes voltage ratio
Compared with device LM293, one of photovoltaic detector is grounded by resistance R4 and electric capacity C3 series circuit, resistance R4 and electric capacity
C3 intermediate connection point is connected with voltage comparator LM293 No. 2 pins, the series connection that power supply V1 passes through resistance R2 and resistance R3
Circuit ground, resistance R2 and resistance R3 intermediate connection points are connected with No. 3 of voltage comparator LM293 and No. 5 pins, the electricity
Hinder R3 two ends shunt capacitance C2；Another photovoltaic detector is grounded by resistance R1 and electric capacity C1 series circuit, resistance R1
It is connected with electric capacity C1 intermediate connection point with voltage comparator LM293 No. 6 pins, No. 1 of the voltage comparator LM293
It is connected with No. 7 pins with A/D converter input.
5. according to the solar silicon wafers detecting system described in claim 1, it is characterised in that：The slave computer is connect by RS232
Mouth is connected with host computer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496596.2A CN107248497A (en) | 2017-06-26 | 2017-06-26 | Solar silicon wafers detecting system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496596.2A CN107248497A (en) | 2017-06-26 | 2017-06-26 | Solar silicon wafers detecting system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107248497A true CN107248497A (en) | 2017-10-13 |
Family
ID=60015262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710496596.2A Pending CN107248497A (en) | 2017-06-26 | 2017-06-26 | Solar silicon wafers detecting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107248497A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106106059A (en) * | 2016-06-21 | 2016-11-16 | 常州工学院 | A kind of intelligent irrigation control system |
| CN106269549A (en) * | 2016-08-23 | 2017-01-04 | 厦门佳元电子科技有限公司 | Silicon chip screening pipeline system and method for sieving |
| CN206208209U (en) * | 2016-11-07 | 2017-05-31 | 上海柏凌电子科技有限公司 | A kind of solar silicon wafers thickness surface stria resistivity automatic checkout system |
-
2017
- 2017-06-26 CN CN201710496596.2A patent/CN107248497A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106106059A (en) * | 2016-06-21 | 2016-11-16 | 常州工学院 | A kind of intelligent irrigation control system |
| CN106269549A (en) * | 2016-08-23 | 2017-01-04 | 厦门佳元电子科技有限公司 | Silicon chip screening pipeline system and method for sieving |
| CN206208209U (en) * | 2016-11-07 | 2017-05-31 | 上海柏凌电子科技有限公司 | A kind of solar silicon wafers thickness surface stria resistivity automatic checkout system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171013 |
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| RJ01 | Rejection of invention patent application after publication |