CN107234336A - A kind of laser processing and device of dynamic regulation pulse energy and time interval - Google Patents

A kind of laser processing and device of dynamic regulation pulse energy and time interval Download PDF

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Publication number
CN107234336A
CN107234336A CN201710546389.3A CN201710546389A CN107234336A CN 107234336 A CN107234336 A CN 107234336A CN 201710546389 A CN201710546389 A CN 201710546389A CN 107234336 A CN107234336 A CN 107234336A
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runner
electronic
phase delay
laser
attenuator
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CN107234336B (en
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于艳玲
魏鑫磊
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Jiangsu Advanced Light Source Technology Research Institute Co ltd
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Wenzhou Polytechnic
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Priority to CN201710546389.3A priority patent/CN107234336B/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention provides the laser processing device of a kind of dynamic regulation pulse energy and time interval, including laser, beam-expanding collimation mirror, electronic attenuator runner, electronic phase delay chip runner, one or more speculums and focusing objective len;It is provided with electronic attenuator runner on multiple laser attenuation pieces, electronic phase delay chip runner and multiple phase delay chips is installed;Processing laser beam is incident to after beam-expanding collimation mirror, an attenuator on vertical incidence to electronic attenuator runner, after the decay of attenuator, a phase delay chip on vertical incidence to electronic phase delay chip runner, after the delay of phase delay chip, workpiece surface is focused on by focusing objective len output after reflected mirror reflection.The present invention can realize the accurate dynamic control exported to energy during Materialbearbeitung mit Laserlicht, have the advantages that control accuracy is high, it is fast, high in machining efficiency to respond.Present invention also offers the laser processing of a kind of dynamic regulation pulse energy and time interval.

Description

A kind of laser processing and device of dynamic regulation pulse energy and time interval
Technical field
The invention belongs to field of laser processing, and in particular to a kind of laser of dynamic regulation pulse energy and time interval adds Work method and device.
Background technology
The basic process of laser and material effects can be divided into two processes:Thermodynamic process and non-thermodynamic process.When When the heat energy propagation time is shorter than laser pulse width, within the period that material absorbs laser energy, will occur electronics and be excited A variety of heat transfers and the diffusion processes such as process, Electron-phonon relaxation process, phonon-phonon relaxation process.Swash so in calcination Light all realizes that this just makes laser burns edges of regions by serious heat to melt material, gasification, removal by fuel factor Influence and damage.Here it is the essence that Long Pulse LASER and material interact, when incident long pulse energy is sufficiently strong, material Meeting direct ionization causes the removal of material into plasma.And when laser pulse width is much smaller than the relaxation time of Electron-phonon When, will not occur energy in laser pulse and material interaction time section and exist and spread in the form of heat energy, so as to keep away Heat affecting and damage that thermal diffusion is caused are exempted from, here it is ultra-short pulse laser and material interaction essence.Femtosecond pulse swashs During light radiation material, energy can't be shifted with form of thermal energy, but in material surface formation plasma, these plasmas Directly absorb what highdensity pulsed laser energy was formed by the atom in material, the formation of plasma is right in process The removal of material is played a significant role.Therefore compared to Long Pulse LASER processing, the workpiece topography of short-pulse laser processing More preferably, but the generation of plasma can absorb a part of laser energy, and because optical pressure material such as vaporizes at the presence of process, Pressure wave can be also formed in the material and extraneous near interface of machining area, the surface topography of material after influence processing.
The process of Reciprocity of Laser & Materials is relevant with many factors, both relevant with LASER Light Source, and and action material And external environment condition is relevant.Heat couple coefficient, thermal constant, absorption coefficient, the reflectance factor of material in itself etc. all can be to mechanism Produce influence;The factor of LASER Light Source mainly has pulsewidth, energy, power density, optical maser wavelength, repetitive rate, light distribution etc., its Middle any factor all can produce material impact to mechanism.Also exactly this species diversity of laser parameter is to laser and thing Matter this research field that interacts adds vigor, further the application of developing laser.
At present, the main technologic parameters of pulse laser machining include laser power (repetition rate × pulse energy), repeated Frequency (fixed pulse interval), sweep speed etc., existing pulsed laser processing device adjust general to technological parameter It is to adjust repetition rate, dutycycle to adjust laser power, it is impossible to any dynamic regulation pulse energy and time interval.
The content of the invention
A kind of present invention swashing there is provided dynamic regulation pulse energy and time interval for above-mentioned the deficiencies in the prior art Light processing method;A kind of laser processing device of the present invention also simultaneously there is provided dynamic regulation pulse energy and time interval.
The present invention is achieved through the following technical solutions:
A kind of laser processing device of dynamic regulation pulse energy and time interval, including laser, beam-expanding collimation mirror, electricity Dynamic attenuator runner, electronic phase delay chip runner, one or more speculums and focusing objective len;
The structure of the electronic attenuator runner is identical with the structure of electronic phase delay chip runner, and both of which is with circulation Magnetism servo-electric motor water-cooling and gas curtain air cooling mechanism, while being also connected with an electronic rotation mechanism, the electronic rotation mechanism programming is controllable, For driving electronic attenuator runner and electronic phase delay chip runner to be rotated around its center axis respectively;
The electronic attenuator runner and electronic phase delay chip runner both of which are in disk form, edge on the inside of the edge of disk Circumferencial direction is evenly arranged with multiple size identical circular mounting holes, and the center of circle of multiple circular mounting holes is located at same circumference On;The central axis of the central axis of multiple circular mounting holes and electronic attenuator runner and electronic phase delay chip runner is put down OK;
Multiple laser attenuation pieces, multiple laser are separately installed with multiple circular mounting holes of the electronic attenuator runner The installation position of attenuator causes the central axis of the multiple laser attenuation piece, and electronic attenuator runner central axis It is mutually parallel;The pad value of the multiple laser attenuation piece is different;
The multiple laser attenuation piece is in the erection sequence of multiple circular mounting holes:By multiple laser attenuation pieces by decay It is worth size sequence, i.e., is sequentially arranged at multiple circles according to the order of pad value from big to small or from small to large in a clockwise direction On mounting hole;
Multiple phase delay chips are separately installed with multiple circular mounting holes of the electronic phase delay chip runner, it is multiple The installation position of phase delay chip causes the central axis of the multiple phase delay chip, and electronic phase delay chip runner Central axis is mutually parallel;The phase-delay value of the multiple phase delay chip is different;
The multiple phase delay chip is in the erection sequence of multiple circular mounting holes:Multiple phase delay chips are pressed into phase Length of delay size sorts, i.e., be sequentially arranged in a clockwise direction according to the order of phase-delay value from big to small or from small to large On multiple circular mounting holes;
The processing laser beam that laser is sent is incident to beam-expanding collimation mirror, after the beam-expanding collimation of beam-expanding collimation mirror, vertically It is incident to an attenuator on electronic attenuator runner, after the decay of attenuator, vertical incidence to electronic phase delay chip A phase delay chip on runner, after the delay of phase delay chip, enters focusing objective len, by focusing on after reflected mirror reflection Workpiece surface is focused on after object lens output.
Present invention also offers the laser processing of a kind of dynamic regulation pulse energy and time interval, including following step Suddenly:
(1) required according to Laser Processing, it is determined that multigroup parameter of Laser Processing, every group of parameter includes pulse energy With time interval;
(2) the mutually different laser attenuation piece of multiple pad values is arranged on electronic attenuator runner, its installation position It is:Multiple laser attenuation pieces with electronic attenuator roller centre axial line distance for R1 circumferencial direction on uniformly arrange, it is multiple Laser attenuation piece sorts by pad value size, in a clockwise direction according to pad value order from big to small or from small to large successively Install, the centerline axis parallel of the central axis of all laser attenuation pieces with electronic attenuator runner;Wherein, R1 is less than electronic The radius of attenuator runner;
(3) the mutually different phase delay chip of multiple phase-delay values is arranged on electronic phase delay chip runner, its Installation position is:Multiple phase delay chips are being equal on R2 circumferencial direction with electronic phase delay chip roller centre axial line distance Even arrangement, multiple phase delay chips by phase-delay quantity size sort, in a clockwise direction according to pad value from big to small or from It is small to be installed successively to big order, the central axis of the central axis of all phase delay chips with electronic phase delay chip runner It is parallel;Wherein, R2 is less than the radius of electronic phase delay chip runner;
(4) laser, processing laser beam, beam-expanding collimation mirror, electronic attenuator runner, electronic phase delay chip has been configured to turn The dimensional orientation of wheel, one or more speculums and focusing objective len so that optical axis, the light of beam-expanding collimation mirror of processing laser beam Axle, the centre normal of some attenuator on electronic attenuator runner, some phase delay on electronic phase delay chip runner The centre normal of piece is overlapped;
(5) workpiece is installed on the table, the workpiece can drive the translation for doing X-Y both directions to transport by workbench It is dynamic;
(6) laser is opened, laser output pulse energy is E0, pulse interval be T0Processing laser beam, it is described Processing laser beam is incident to beam-expanding collimation mirror, after the beam-expanding collimation of beam-expanding collimation mirror, vertical incidence to electronic attenuator runner On an attenuator, after the decay of attenuator, processing laser beam pulse energy decay to E1, vertical incidence is to electricity afterwards A phase delay chip on dynamic phase delay chip runner, after the delay of phase delay chip, pulse interval is changed into T1, most After being reflected by speculum enter focusing objective len, by focusing objective len export after focus on workpiece surface;
(7) laser is closed, judges whether to have met processing request, if meeting, step (11) is transferred to;Otherwise, into step Suddenly (8);
(8) electronic attenuator runner is controlled to rotate an angle by electronic rotation mechanism so that current attenuation piece is removed, Next attenuator is moved to the position of current attenuation piece, adds process;
(9) electronic phase delay chip runner is controlled to rotate an angle by electronic rotation mechanism so that current phase is prolonged Slow piece is removed, and next phase delay chip is moved to the position of current phase delay chip, adds process;
(10) return to step (6);
(11) terminate.
The present invention has the advantages that:
1st, the present invention can realize the dynamic regulation of pulse energy, any dynamic regulation of pulse interval and the two Combination regulation, solve the two technical barrier that can not arbitrarily adjust in the prior art.
2nd, the present invention can obtain a series of non-uniform time intervals, the laser pulse of identical pulse energy, dynamic modulation A series of different time intervals and the laser pulse of pulse energy, it is defeated to energy during Materialbearbeitung mit Laserlicht so as to realize The accurate dynamic control gone out, for realizing a variety of special processing effects, such as blind hole obtains the accurate control of hole depth when processing With hole wall, the accurate control of bottom hole quality, heat input during the accurate etching of multi-layer heterogeneous material in different materials interface is smart Close control etc..Conventional duty cycle adjustment, the mode of the multiple milling of low-power compared with prior art, with control accuracy it is high, Response advantage fast, high in machining efficiency.
Brief description of the drawings
Fig. 1 is the structure chart of the laser processing device of dynamic regulation pulse energy of the present invention and time interval;
Fig. 2 is the structure chart of electronic attenuator runner of the present invention.
Embodiment
The present invention will be further described in detail with reference to the accompanying drawings and detailed description.
As shown in figure 1, the invention provides the laser processing device of a kind of dynamic regulation pulse energy and time interval, bag Include laser, beam-expanding collimation mirror M1, electronic attenuator runner Z1, electronic phase delay chip runner Z2, one or more speculums M2 and focusing objective len M3.
The laser is used to export pulse energy for E0, pulse interval be T0Processing laser beam L1.
The structure of the electronic attenuator runner Z1 is identical with electronic phase delay chip runner Z2 structure, and both of which is carried Recirculated water cooling mechanism and gas curtain air cooling mechanism, while be also connected with an electronic rotation mechanism, the electronic rotation mechanism programming It is controllable, for driving electronic attenuator runner Z1 and electronic phase delay chip runner Z2 to be rotated necessarily around its center axis respectively Angle.
As shown in Fig. 2 the electronic attenuator runner Z1 and electronic phase delay chip runner Z2 both of which are in disk form, circle Multiple size identical circular mounting holes 11 are along the circumferential direction evenly arranged with the inside of the edge of disk, multiple circular mounting holes 11 The center of circle is located on same circumference;The central axis of multiple circular mounting holes 11 prolongs with electronic attenuator runner Z1 and electronic phase Slow piece runner Z2 centerline axis parallel.
Multiple laser attenuation pieces are separately installed with multiple circular mounting holes 11 of the electronic attenuator runner Z1, it is multiple The installation position of laser attenuation piece causes in the central axis of the multiple laser attenuation piece, and electronic attenuator runner Z1 Heart axis is mutually parallel;The pad value of the multiple laser attenuation piece is different.
The multiple laser attenuation piece is in the erection sequence of multiple circular mounting holes 11:By multiple laser attenuation pieces by declining Depreciation size sorts, i.e., be sequentially arranged at multiple circles according to the order of pad value from big to small or from small to large in a clockwise direction On shape mounting hole 11.
Multiple phase delay chips are separately installed with multiple circular mounting holes 11 of the electronic phase delay chip runner Z2, The installation position of multiple phase delay chips causes the central axis of the multiple phase delay chip, and electronic phase delay chip to turn The central axis for taking turns Z2 is mutually parallel;The phase-delay value of the multiple phase delay chip is different.
The multiple phase delay chip is in the erection sequence of multiple circular mounting holes 11:Multiple phase delay chips are pressed into phase Position length of delay size sequence, i.e., install successively according to the order of phase-delay value from big to small or from small to large in a clockwise direction On multiple circular mounting holes 11.
The processing laser beam L1 is incident to beam-expanding collimation mirror M1, after beam-expanding collimation mirror M1 beam-expanding collimation, vertically enters The attenuator (i.e. laser beam optical axis is overlapped with the centre normal of attenuator) on electronic attenuator runner Z1 is incident upon, through decay After the decay of piece, processing laser beam L1 pulse energy decays to E1, and vertical incidence is to electronic phase delay chip runner Z2 afterwards On a phase delay chip (i.e. laser beam optical axis is overlapped with the centre normal of phase delay chip), the delay through phase delay chip Afterwards, pulse interval is changed into T1, enter focusing objective len M3 after last reflected mirror M2 reflections, gather after focusing objective len M3 outputs Jiao is in workpiece surface.
Because the light velocity is far longer than runner velocity of rotation, the two is compared, and can be regarded as laser beam transmission and be passed through relative be in The attenuator and phase delay chip of " accurate static " state.
Can be by the electronic attenuator runner Z1 of programme-control and electronic phase delay chip runner Z2 rotation so that selected Some attenuator and some phase delay chip when next laser pulse is sent, its centre normal is turned to and laser The optical axis coincidence of beam.
If laser pulse repetition frequency is freq, pulse interval is T0, then freq=1/T0
If being provided with N number of equally distributed laser attenuation piece, electronic phase delay chip runner on electronic attenuator runner Z1 N number of equally distributed phase delay chip is installed, then angle α=360 °/N or α=2 π/N between piece on Z2.
If currently just having had pulse P1Pass through N1Piece, i.e. N1Piece is in optical axis position (N1Normal and optical axis coincidence), due to the light velocity Considerably beyond the linear velocity of runner, the two is compared, and may be regarded as working as P1Through when, N1In " accurate static ".
If allowing next pulse P2Pass through NkPiece, then demand T0After duration, NkPiece goes to its normal and optical axis coincidence, therefore, Rotation speed requirements:(k-1) α=ω T0, ω is mean speed (angular speed).
Therefore, the motion control to two runners is " point position control ", i.e., as implied above.But the control of its movement velocity can be with Used a variety of acceleration and deceleration+at the uniform velocity section controls to realize.
Present invention also offers a kind of Laser Processing of dynamic regulation pulse energy and time interval based on said apparatus Method, specifically includes following steps:
(1) required according to Laser Processing, it is determined that multigroup parameter of Laser Processing, every group of parameter includes pulse energy With time interval;
(2) the mutually different laser attenuation piece of multiple pad values is arranged on electronic attenuator runner Z1, its installation side Position is:Multiple laser attenuation pieces are being uniformly to be arranged on R1 circumferencial direction with electronic attenuator runner Z1 central axis distance, Multiple laser attenuation pieces sort by pad value size, in a clockwise direction the order according to pad value from big to small or from small to large Install successively, the centerline axis parallel of the central axis of all laser attenuation pieces with electronic attenuator runner Z1;Wherein, R1 is small In electronic attenuator runner Z1 radius;
(3) the mutually different phase delay chip of multiple phase-delay values is arranged on electronic phase delay chip runner Z2, Its installation position is:Multiple phase delay chips are in the circumferencial direction for being R2 with electronic phase delay chip runner Z2 central axis distance Upper uniform arrangement, multiple phase delay chips sort by phase-delay quantity size, in a clockwise direction according to pad value from big to small Or order from small to large is installed successively, the central axis of all phase delay chips with electronic phase delay chip runner Z2 Heart diameter parallel;Wherein, R2 is less than electronic phase delay chip runner Z2 radius;
(4) laser, processing laser beam L1, beam-expanding collimation mirror M1, electronic attenuator runner Z1, electricity have been configured according to Fig. 1 Dynamic phase delay chip runner Z2, one or more speculum M2 and focusing objective len M3 dimensional orientation so that processing laser beam L1 Optical axis, beam-expanding collimation mirror M1 optical axis, centre normal, the electronic phase of some attenuator on electronic attenuator runner Z1 prolong The centre normal of some phase delay chip on slow piece runner Z2 is overlapped;
(5) workpiece is installed on the table, the workpiece can drive the translation for doing X-Y both directions to transport by workbench It is dynamic;
(6) laser is opened, laser output pulse energy is E0, pulse interval be T0Processing laser beam L1, institute State processing laser beam L1 and be incident to beam-expanding collimation mirror M1, after beam-expanding collimation mirror M1 beam-expanding collimation, vertical incidence declines to electronic Subtract the attenuator (i.e. laser beam optical axis is overlapped with the centre normal of attenuator) on piece runner Z1, the decay through attenuator Afterwards, processing laser beam L1 pulse energy decays to E1, one in vertical incidence to electronic phase delay chip runner Z2 afterwards Phase delay chip (i.e. laser beam optical axis is overlapped with the centre normal of phase delay chip), after the delay of phase delay chip, pulse Time interval is changed into T1, enter focusing objective len M3 after last reflected mirror M2 reflections, work focused on after focusing objective len M3 outputs Part surface.
(7) laser is closed, judges whether to have met processing request, if meeting, step (11) is transferred to;Otherwise, into step Suddenly (8);
(8) electronic attenuator runner Z1 is controlled to rotate an angle by electronic rotation mechanism so that current attenuation piece is moved Open, next attenuator is moved to the position of current attenuation piece, add process;
(9) electronic phase delay chip runner Z2 is controlled to rotate an angle by electronic rotation mechanism so that current phase Delay piece is removed, and next phase delay chip is moved to the position of current phase delay chip, adds process;
(10) return to step (6);
(11) terminate.
The present invention can change into that various ways are apparent to one skilled in the art, and such change is not considered as Depart from the scope of the present invention.All such technical staff to the field obviously change, and are included within this right It is required that within the scope of.

Claims (2)

1. the laser processing device of a kind of dynamic regulation pulse energy and time interval, it is characterised in that including laser, expand Collimating mirror (M1), electronic attenuator runner (Z1), electronic phase delay chip runner (Z2), one or more speculums (M2) and poly- Focus objective lens (M3);
The structure of the electronic attenuator runner (Z1) is identical with the structure of electronic phase delay chip runner (Z2), and both of which is carried Recirculated water cooling mechanism and gas curtain air cooling mechanism, while be also connected with an electronic rotation mechanism, the electronic rotation mechanism programming It is controllable, for driving electronic attenuator runner (Z1) and electronic phase delay chip runner (Z2) to be revolved around its center axis respectively Turn;
The electronic attenuator runner (Z1) and electronic phase delay chip runner (Z2) both of which are in disk form, in the edge of disk Side is along the circumferential direction evenly arranged with multiple size identical circular mounting holes (11), the center of circle position of multiple circular mounting holes (11) In on same circumference;The central axis of multiple circular mounting holes (11) and electronic attenuator runner (Z1) and electronic phase delay The centerline axis parallel of piece runner (Z2);
Multiple laser attenuation pieces are separately installed with multiple circular mounting holes (11) of the electronic attenuator runner (Z1), it is multiple The installation position of laser attenuation piece causes the central axis of the multiple laser attenuation piece, and electronic attenuator runner (Z1) Central axis is mutually parallel;The pad value of the multiple laser attenuation piece is different;
The multiple laser attenuation piece is in the erection sequence of multiple circular mounting holes (11):By multiple laser attenuation pieces by decay It is worth size sequence, i.e., is sequentially arranged at multiple circles according to the order of pad value from big to small or from small to large in a clockwise direction On mounting hole (11);
Multiple phase delay chips are separately installed with multiple circular mounting holes (11) of the electronic phase delay chip runner (Z2), The installation position of multiple phase delay chips causes the central axis of the multiple phase delay chip, and electronic phase delay chip to turn The central axis for taking turns (Z2) is mutually parallel;The phase-delay value of the multiple phase delay chip is different;
Erection sequence of the multiple phase delay chip in multiple circular mounting holes (11) be:Multiple phase delay chips are pressed into phase Length of delay size sorts, i.e., be sequentially arranged in a clockwise direction according to the order of phase-delay value from big to small or from small to large On multiple circular mounting holes (11);
The processing laser beam that laser is sent is incident to beam-expanding collimation mirror (M1), after beam-expanding collimation mirror (M1) beam-expanding collimation, An attenuator on vertical incidence to electronic attenuator runner (Z1), after the decay of attenuator, vertical incidence to electronic phase A phase delay chip on position delay piece runner (Z2), after the delay of phase delay chip, reflected mirror (M2) reflection is laggard Enter focusing objective len (M3), workpiece surface is focused on after focusing objective len (M3) output.
2. the laser processing of a kind of dynamic regulation pulse energy and time interval, it is characterised in that comprise the following steps:
(1) according to Laser Processing require, it is determined that Laser Processing multigroup parameter, every group of parameter include pulse energy and when Between be spaced;
(2) the mutually different laser attenuation piece of multiple pad values is arranged on electronic attenuator runner (Z1), its installation position It is:Multiple laser attenuation pieces are being uniformly to be arranged on R1 circumferencial direction with electronic attenuator runner (Z1) central axis distance, Multiple laser attenuation pieces sort by pad value size, in a clockwise direction the order according to pad value from big to small or from small to large Install successively, the centerline axis parallel of the central axis of all laser attenuation pieces with electronic attenuator runner (Z1);Wherein, R1 Less than the radius of electronic attenuator runner (Z1);
(3) the mutually different phase delay chip of multiple phase-delay values is arranged on electronic phase delay chip runner (Z2), its Installation position is:Multiple phase delay chips are in the circumferencial direction for being R2 with electronic phase delay chip runner (Z2) central axis distance Upper uniform arrangement, multiple phase delay chips sort by phase-delay quantity size, in a clockwise direction according to pad value from big to small Or order from small to large is installed successively, the central axis of all phase delay chips with electronic phase delay chip runner (Z2) Centerline axis parallel;Wherein, R2 is less than the radius of electronic phase delay chip runner (Z2);
(4) laser, processing laser beam, beam-expanding collimation mirror (M1), electronic attenuator runner (Z1), electronic phase delay have been configured The dimensional orientation of piece runner (Z2), one or more speculums (M2) and focusing objective len (M3) so that the optical axis of processing laser beam, Centre normal, the electronic phase delay of the optical axis of beam-expanding collimation mirror (M1), some attenuator on electronic attenuator runner (Z1) The centre normal of some phase delay chip on piece runner (Z2) is overlapped;
(5) workpiece is installed on the table, the workpiece can be driven the translational motion for doing X-Y both directions by workbench;
(6) laser is opened, laser output pulse energy is E0, pulse interval be T0Processing laser beam, the processing Laser beam is incident to beam-expanding collimation mirror (M1), after beam-expanding collimation mirror (M1) beam-expanding collimation, vertical incidence to electronic attenuator An attenuator on runner (Z1), after the decay of attenuator, the pulse energy of processing laser beam decays to E1, afterwards vertically It is incident to a phase delay chip on electronic phase delay chip runner (Z2), after the delay of phase delay chip, burst length Interval is changed into T1, enter focusing objective len (M3) after last reflected mirror (M2) reflection, focused on after focusing objective len (M3) output Workpiece surface;
(7) laser is closed, judges whether to have met processing request, if meeting, step (11) is transferred to;Otherwise, into step (8);
(8) electronic attenuator runner (Z1) is controlled to rotate an angle by electronic rotation mechanism so that current attenuation piece is removed, Next attenuator is moved to the position of current attenuation piece, adds process;
(9) electronic phase delay chip runner (Z2) is controlled to rotate an angle by electronic rotation mechanism so that current phase is prolonged Slow piece is removed, and next phase delay chip is moved to the position of current phase delay chip, adds process;
(10) return to step (6);
(11) terminate.
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CN108089201A (en) * 2017-12-08 2018-05-29 上海禾赛光电科技有限公司 Obstacle information acquisition methods, the launching technique of laser pulse and device
CN109175729A (en) * 2018-09-30 2019-01-11 大族激光科技产业集团股份有限公司 A kind of laser cutting system and method for epoxy resin case chip
CN110899964A (en) * 2018-09-17 2020-03-24 鸿超光电科技股份有限公司 Axial light spot adjusting method and system
TWI691374B (en) * 2018-01-31 2020-04-21 日商住友重機械工業股份有限公司 Laser control device and laser processing method
US11573327B2 (en) 2017-12-08 2023-02-07 Hesai Technology Co., Ltd. Systems and methods for light detection and ranging

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