CN107231129A - Harmonic controling CMOS frequency mixers based on transformer device structure - Google Patents
Harmonic controling CMOS frequency mixers based on transformer device structure Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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Abstract
The invention discloses a kind of harmonic controling CMOS frequency mixers based on transformer device structure, the frequency mixer includes transconductance stage, the transformer network of harmonic controling, switching stage and output stage；Input radio frequency signal is converted into radio-frequency current by transconductance stage, it is non-linear due to transistor, contain fundamental wave and each harmonic composition in radio-frequency current after conversion, switching stage is injected into after transformer harmonic controling network suppresses wherein second_harmonic generation and filters out triple-frequency harmonics, is mixed by the modulation of switching stage and intermediate-freuqncy signal is finally exported by output stage.The harmonic controling network that the present invention introduces transformer device structure between the transconductance stage and switching stage of frequency mixer has the linearity for improving frequency mixer, isolation, noiseproof feature, and the characteristics of reduction operating voltage and quiescent dissipation.
Description
Technical field
The invention belongs to microelectronics techniques field, and in particular to a kind of harmonic controling CMOS based on transformer device structure is mixed
Frequency device.
Background technology
Frequency mixer is the important module in radio-frequency receiving-transmitting chain, completes the function that signal is converted to intermediate frequency from radio frequency, mixing
The quality of device design directly affects the performance of whole system link.In recent years, as wireless communication technology is developed rapidly, work frequency
Rate more and more higher, modulation system becomes increasingly complex, and the multichannel technology such as Phase Array, MIMO is popularized in communication system should
With this proposes harsh requirement to the design of frequency mixer.On the one hand, the rise of working frequency, in millimeter wave, particularly THz
In frequency range, local oscillator LO power output is difficult to do height, and this prevents frequency mixer from providing a good gain；On the other hand,
In existing circuit structure, although active mixer can meet gain requirement, and relative passive frequency mixer has more preferable end
Mouthful isolation, however there is also one it is natural the problem of, i.e., the linearity is not high, and too low input P1dB can not be met current to be led to more
The requirement of road design；In addition, the active mixer of traditional structure also there are problems that power consumption is larger and operating voltage relatively.
Harmonic Control Theory is appeared among the design of high efficiency RF power amplification earliest, and main thought is by harmonic termination
Impedance control be the control of frequency domain so that drain voltage waveform and current waveform stagger in time domain, improve power amplifier effect to reach
The purpose of rate.Harmonic controling is carried out to load impedance, to reach that preferable effect needs to carry out all higher hamonic waves in theory
Control ability, in practice due to, control to triple-frequency harmonics very faint more than the harmonic component after three times.
Therefore, the related thought based on harmonic controling, is adjusted different from the waveform in power amplifier design but elimination high order is humorous
The influence of ripple, by constructing passive transformer network, makes full use of the advantage of six port transformer structures, innovation and creation go out one kind
The linearity, isolation, noiseproof feature can be improved, while the frequency mixer for reducing operating voltage and power consumption is actually required.
The design people is actively subject to research and innovation, to found a kind of harmonic controling CMOS mixing based on transformer device structure
Device, makes it with more the value in industry.
The content of the invention
In order to solve the above technical problems, it is an object of the invention to provide a kind of harmonic controling CMOS based on transformer device structure
Frequency mixer, it is possible to increase the linearity, isolation, noiseproof feature, while the frequency mixer for reducing operating voltage and power consumption is actual institute
Need.
Harmonic controling CMOS frequency mixers of the invention based on transformer device structure, including：
The transconductance stage being sequentially connected, the harmonic controling network based on six port transformers, switching stage and output stage, radio frequency letter
Number by transconductance stage amplify after export to harmonic controling network, in the harmonic wave of the radiofrequency signal after the control amplification of harmonic controling network
Secondary and triple-frequency harmonics, then intermediate-freuqncy signal is produced by switching stage, eventually pass through output stage output.
Further, described transconductance stage includes：NMOS tube MN1 and, NMOS tube MN2, wherein, NMOS tube MN1 and, NMOS
Pipe MN2 grid connects the two ends of a differential radio frequency voltage signal as two rf inputs and respectively, NMOS tube MN1 and
NMOS tube MN2 source electrode links together, NMOS tube MN1 and, NMOS tube MN2 drain electrode as the transconductance stage two outputs
Hold output difference current radio frequency signal.
Further, the harmonic controling network based on six port transformers includes：Primary inductance LP1, inductance LP2
With inductance LC at primary center tap；Transformer secondary output inductance LS1, inductance LS2 and secondary ground centre cap；Wherein, six
Port transformer is fully differential structure, and transformer is constituted using inductance LC at primary inductance LP1, inductance LP2, primary center tap
Primary coil part, transformer secondary output inductance LS1, inductance LS2 constitute transformer secondary coil part, inductance LT1, inductance LT2,
Electric capacity CT1, electric capacity CT2 control network for the triple-frequency harmonics of transformer secondary output output end, and the differential signal of transconductance stage output passes through
Inductive primary is coupled to inductive secondary.
Further, described switching stage includes：Constitute the NMOS tube of four identical sizes of dual balanced structure switching stage
MN3, NMOS tube MN4, NMOS tube MN5 and NMOS tube MN6；Differential inductance L1, L2 and electric capacity C1, C2 as mixer load,
The two poles of the earth of differential inductance are illustrated as using inductance L1 and L2, centre cap part connects supply voltage and powered, and shows using electric capacity C1, C2
Mean the electric capacity at connection differential inductance two ends；
Wherein, NMOS tube MN3 and NMOS tube MN4 constitute first switch branch road, and NMOS tube MN5 and NMOS tube MN6 constitutes the
Two switching branches；The grid of the first switch branch road and second switch branch road connects the two ends LOP of difference local oscillation signal respectively
With LON；The source electrode of first switch the branch road MN3 and MN4 link together, the source electrode of second switch the branch road MN5 and MN6
Link together, the secondary differential signal end of harmonic controling network is connected respectively；NMOS tube MN3 and NMOS tube MN5 drain electrode connect
Be connected together, NMOS tube MN4 and NMOS tube MN6 drain electrode link together, respectively connect differential load L1, C1 part and
L2, C2 part, are used as the difference output end for being connected to output stage；
Six port transformers connected between transconductance stage and switching stage are used to coupled RF signal；Transformer
Centre cap the power supply of transconductance stage be provided powered, the centre cap of transformer secondary coil provides the source class ground connection of switching stage；
The port impedance characteristic of alternating current of transformer to Transformer Modeling by obtaining, i.e., from the drain of transconductance stage toward primary difference port
The second harmonic impedance seen into is rendered as high-impedance state, is to be shorted to ground in the impedance of transformer secondary output differential ends triple-frequency harmonics.
Further, described output stage is based on TIA amplifier architectures, including：PMOS MP1, PMOS MP2, NMOS
Pipe MN7, NMOS tube MN8, resistance R1, resistance R2 and electric capacity CP, electric capacity CN；
Wherein, RF-coupled electric capacity CP, CN are connected between output stage and switching stage and plays blocking, coupled switch level is defeated
The radiofrequency signal gone out is to output stage；PMOS MP1, PMOS MP2 source electrode connect supply voltage, and drain electrode meets NMOS tube MN7 respectively
With NMOS tube MN8 drain electrode；NMOS tube MN7 and NMOS tube MN8 source class ground connection, grid connect PMOS MP1 and PMOS respectively
Pipe MP2 grid；Resistance R1, resistance R2 two ends connect grid and the drain electrode of PMOS and NMOS tube respectively, in output stage and
RF-coupled electric capacity CP, CN are connected between switching stage and plays blocking, the radiofrequency signal that coupled switch level is exported to output stage.
By such scheme, the harmonic controling CMOS frequency mixers of the invention based on transformer device structure at least have following excellent
Point：
The linearity and drain efficiency of transconductance stage can not only be improved by carrying out harmonic controling using transformer, and due to mutual conductance
Amplifying stage and switching stage are by transformer coupled, and the biasing of two-stage can realize free control, transconductance stage is operated in Class-
During AB, pipe can produce maximum fundametal compoment, and static effect now compared with Class-A when it is also lower, and adjust switch
The V of levelgs-VthVoltage, it is fully operated on off state significantly reduces output noise.Further, since this becomes
Depressor is located between transconductance stage and switching stage in domain structure, the natural distance pulled open between the two, has cut off mutual conductance
Directapath between pipe and switching tube parasitic capacitance, improves isolation, reduces LO-RF leakages.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the harmonic controling CMOS frequency mixers of the invention based on transformer device structure；
Fig. 2 is the harmonic controling transformer network knot in the harmonic controling CMOS frequency mixers of the invention based on transformer device structure
Structure schematic diagram.
Embodiment
With reference to embodiment, the embodiment to the present invention is described in further detail.Following examples are used for
Illustrate the present invention, but be not limited to the scope of the present invention.
Harmonic controling CMOS frequency mixers of the invention based on transformer device structure, including：
The transconductance stage being sequentially connected, the harmonic controling network based on six port transformers, switching stage and output stage, radio frequency letter
Number by transconductance stage amplify after export to harmonic controling network, in the harmonic wave of the radiofrequency signal after the control amplification of harmonic controling network
Secondary and triple-frequency harmonics, then intermediate-freuqncy signal is produced by switching stage, eventually pass through output stage output.
The present invention is humorous to transconductance stage output signal secondary and three times by using the harmonic controling network of transformer device structure
Ripple is adjusted, and effectively improves the linearity of frequency mixer, isolation, the drain efficiency of noiseproof feature and mutual conductance pipe, is reduced simultaneously
Operating voltage and quiescent dissipation.
A kind of preferred embodiment of harmonic controling CMOS frequency mixers of the present invention based on transformer device structure：
Described harmonic controling CMOS frequency mixers, including：
The transconductance stage being sequentially connected, the harmonic controling network based on six port transformers, switching stage and output stage, radio frequency letter
Number by transconductance stage amplify after export to harmonic controling network, in the harmonic wave of the radiofrequency signal after the control amplification of harmonic controling network
Secondary and triple-frequency harmonics, then intermediate-freuqncy signal is produced by switching stage, eventually pass through output stage output.
Described transconductance stage includes：NMOS tube MN1 and, NMOS tube MN2, wherein, NMOS tube MN1 and, NMOS tube MN2 grid
Pole connects the two ends of a differential radio frequency voltage signal, NMOS tube MN1 and NMOS tube MN2 as two rf inputs and respectively
Source electrode link together, NMOS tube MN1 and, NMOS tube MN2 drain electrode as the transconductance stage two output end output differences
Divide current radio frequency signal.
The described harmonic controling network based on six port transformers includes：In primary inductance LP1, inductance LP2 and primary
Inductance LC at heart tap；Transformer secondary output inductance LS1, inductance LS2 and secondary ground centre cap；Wherein, six port transformation
Device is fully differential structure, and transformer is constituted using inductance LC at primary inductance LP1, inductance LP2, primary center tap
Part, transformer secondary output inductance LS1, inductance LS2 constitute transformer secondary coil part, inductance LT1, inductance LT2, electric capacity CT1,
Electric capacity CT2 controls network for the triple-frequency harmonics of transformer secondary output output end, and the differential signal of transconductance stage output passes through primary inductance
Coil is coupled to inductive secondary.
Described switching stage includes：Constitute NMOS tube MN3, the NMOS tube of four identical sizes of dual balanced structure switching stage
MN4, NMOS tube MN5 and NMOS tube MN6；Differential inductance L1, L2 and electric capacity C1, C2 as mixer load, use inductance L1
The two poles of the earth of differential inductance are illustrated as with L2, centre cap part connects supply voltage and powered, it is poor to be illustrated as connection using electric capacity C1, C2
Divide in the electric capacity at inductance two ends, actual design using an electric capacity；LC laod networks have band logical selecting frequency characteristic, can obtain
Pure intermediate-freuqncy signal output must be compared；
Wherein, NMOS tube MN3 and NMOS tube MN4 constitute first switch branch road, and NMOS tube MN5 and NMOS tube MN6 constitutes the
Two switching branches；The grid of the first switch branch road and second switch branch road connects the two ends LOP of difference local oscillation signal respectively
With LON；The source electrode of first switch the branch road MN3 and MN4 link together, the source electrode of second switch the branch road MN5 and MN6
Link together, the secondary differential signal end of harmonic controling network is connected respectively；NMOS tube MN3 and NMOS tube MN5 drain electrode connect
Be connected together, NMOS tube MN4 and NMOS tube MN6 drain electrode link together, respectively connect differential load L1, C1 part and
L2, C2 part, are used as the difference output end for being connected to output stage；
Six port transformers connected between transconductance stage and switching stage are used to coupled RF signal；Transformer
Centre cap the power supply of transconductance stage be provided powered, the centre cap of transformer secondary coil provides the source class ground connection of switching stage；
The port impedance characteristic of alternating current of transformer to Transformer Modeling by obtaining, i.e., from the drain of transconductance stage toward primary difference port
The second harmonic impedance seen into is rendered as high-impedance state, is to be shorted to ground in the impedance of transformer secondary output differential ends triple-frequency harmonics.
Described output stage is based on TIA amplifier architectures, including：PMOS MP1, PMOS MP2, NMOS tube MN7, NMOS
Pipe MN8, resistance R1, resistance R2 and electric capacity CP, electric capacity CN；
Wherein, RF-coupled electric capacity CP, CN are connected between output stage and switching stage and plays blocking, coupled switch level is defeated
The radiofrequency signal gone out is to output stage；PMOS MP1, PMOS MP2 source electrode connect supply voltage, and drain electrode meets NMOS tube MN7 respectively
With NMOS tube MN8 drain electrode；NMOS tube MN7 and NMOS tube MN8 source class ground connection, grid connect PMOS MP1 and PMOS respectively
Pipe MP2 grid；Resistance R1, resistance R2 two ends connect grid and the drain electrode of PMOS and NMOS tube respectively, in output stage and
RF-coupled electric capacity CP, CN are connected between switching stage and plays blocking, the radiofrequency signal that coupled switch level is exported to output stage.
Fig. 2 is transformer cabling use in the structural representation of harmonic controling transformer network of the present invention, actual design
The superiors' metal is constituted, and because top-level metallic is thicker, can obtain optimal Q values.The trace portions of top metal 1 in Fig. 2, point
Bao Kuo not connect transconductance stage transistor primary coil and secondary coil difference output end inductance LT1 in parallel LT2 and electricity
Hold CT1/CT2, wherein electric capacity CT1/CT2 constitutes metal plate electric capacity by top metal routing 1 and grounding metal plane 3.In Fig. 2
Secondary top-level metallic trace portions 2, constitute transformer secondary output, the source class of output difference end switch level.
Operation principle of the present invention is as follows：
The drain current of common-source stage transistor can be expressed as with Taylor series expansions：
Wherein, vgsFor the gate source voltage of transistor, gm(n)For the nth order mutual conductance of transistor.To transistor nonlinear model
Analysis, it is believed that be that fundamental voltage is added in non-linear element two ends and generates each harmonic, these electric currents make relevant section again
Point produces each harmonic voltage, wherein gm3It is the principal element for producing amplifier third order intermodulation distortion.So, to drain and source class
Good ground connection is provided, harmonic current can be made to flow directly into AC deposition and reduce and formed three times on each non-linear element as far as possible
Harmonic voltage, so as to avoid the third order intermodulation component of fundamental voltage formation.Based on this thought, the present invention is in transformer secondary output
Differential ends construct an inductance capacitance series network resonance and come to provide well to third-harmonic component in third harmonic frequencies
Ground.
For second harmonic component, the second harmonic component that the suppression that transformer can be natural is produced from transconductance stage is entered
Switching stage.In order to further suppress second harmonic component, connected a small inductor LS at the primary center tap of transformer,
It is in high resistant to second harmonic, further suppress the transmission of second harmonic.
Described above is only the preferred embodiment of the present invention, is not intended to limit the invention, it is noted that for this skill
For the those of ordinary skill in art field, without departing from the technical principles of the invention, can also make it is some improvement and
Modification, these improvement and modification also should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of harmonic controling CMOS frequency mixers based on transformer device structure, it is characterised in that including：The mutual conductance being sequentially connected
Level, the harmonic controling network based on six port transformers, switching stage and output stage, radiofrequency signal by transconductance stage amplify after export to
Secondary and triple-frequency harmonics in harmonic controling network, the harmonic wave of the radiofrequency signal after the control amplification of harmonic controling network, then pass through
Switching stage produces intermediate-freuqncy signal, eventually passes through output stage output.
2. the harmonic controling CMOS frequency mixers according to claim 1 based on transformer device structure, it is characterised in that described
Transconductance stage includes：NMOS tube MN1 and, NMOS tube MN2, wherein, NMOS tube MN1 and, NMOS tube MN2 grid is used as two radio frequencies
Input and the two ends for connecting a differential radio frequency voltage signal respectively, NMOS tube MN1 and NMOS tube MN2 source electrode are connected to one
Rise, NMOS tube MN1 and, NMOS tube MN2 drain electrode as the transconductance stage two output end output difference current radio frequency signals.
3. the harmonic controling CMOS frequency mixers according to claim 1 based on transformer device structure, it is characterised in that described
Harmonic controling network based on six port transformers includes：Inductance LC at primary inductance LP1, inductance LP2 and primary center tap；
Transformer secondary output inductance LS1, inductance LS2 and secondary ground centre cap；Wherein, six port transformers are fully differential structure,
Transformer part, transformer secondary output are constituted using inductance LC at primary inductance LP1, inductance LP2, primary center tap
Inductance LS1, inductance LS2 constitute transformer secondary coil part, and inductance LT1, inductance LT2, electric capacity CT1, electric capacity CT2 are transformer
The triple-frequency harmonics control network of secondary output end, the differential signal of transconductance stage output is coupled to secondary electrical by inductive primary
Feel coil.
4. the harmonic controling CMOS frequency mixers according to claim 1 based on transformer device structure, it is characterised in that described
Switching stage includes：Constitute NMOS tube MN3, NMOS tube MN4, the NMOS tube MN5 of four identical sizes of dual balanced structure switching stage
With NMOS tube MN6；Differential inductance L1, L2 and electric capacity C1, C2 as mixer load, difference is illustrated as using inductance L1 and L2
The two poles of the earth of inductance, centre cap part connects supply voltage and powered, and is illustrated as connecting the electricity at differential inductance two ends using electric capacity C1, C2
Hold；
Wherein, NMOS tube MN3 and NMOS tube MN4 constitutes first switch branch road, and NMOS tube MN5 and NMOS tube MN6 constitutes second and opened
Close branch road；The grid of the first switch branch road and second switch branch road connect respectively the two ends LOP of difference local oscillation signal with
LON；The source electrode of first switch the branch road MN3 and MN4 link together, and the source electrode of second switch the branch road MN5 and MN6 connect
It is connected together, the secondary differential signal end of harmonic controling network is connected respectively；NMOS tube MN3 and NMOS tube MN5 drain electrode connection
Together, NMOS tube MN4 and NMOS tube MN6 drain electrode are linked together, and the L1 of differential load, C1 parts and L2 are connected respectively,
C2 parts, are used as the difference output end for being connected to output stage；
Six port transformers connected between transconductance stage and switching stage are used to coupled RF signal；In transformer
The power supply that heart tap provides transconductance stage is powered, and the centre cap of transformer secondary coil provides the source class ground connection of switching stage；Transformation
The port impedance characteristic of alternating current of device by being obtained to Transformer Modeling, i.e., from the drain of transconductance stage toward primary difference port in terms of enter
The second harmonic impedance gone is rendered as high-impedance state, is to be shorted to ground in the impedance of transformer secondary output differential ends triple-frequency harmonics.
5. the harmonic controling CMOS frequency mixers according to claim 1 based on transformer device structure, it is characterised in that described
Output stage is based on TIA amplifier architectures, including：PMOS MP1, PMOS MP2, NMOS tube MN7, NMOS tube MN8, resistance R1,
Resistance R2 and electric capacity CP, electric capacity CN；
Wherein, RF-coupled electric capacity CP, CN are connected between output stage and switching stage and plays blocking, coupled switch level output
Radiofrequency signal is to output stage；PMOS MP1, PMOS MP2 source electrode connect supply voltage, drain electrode connect respectively NMOS tube MN7 and
NMOS tube MN8 drain electrode；NMOS tube MN7 and NMOS tube MN8 source class ground connection, grid connect PMOS MP1 and PMOS respectively
MP2 grid；Resistance R1, resistance R2 two ends connect grid and the drain electrode of PMOS and NMOS tube respectively, output stage and are opening
RF-coupled electric capacity CP, CN are connected between the level of pass and plays blocking, the radiofrequency signal that coupled switch level is exported to output stage.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786168A (en) * | 2017-11-07 | 2018-03-09 | 四川大学 | A kind of double balanced passive Subharmonic mixers of high-gain high isolation millimeter wave |
| CN109309480A (en) * | 2018-10-29 | 2019-02-05 | 电子科技大学 | A kind of low noise switched transconductor mixer |
| CN109379049A (en) * | 2018-12-12 | 2019-02-22 | 中国电子科技集团公司第五十五研究所 | High local oscillator degree of suppression broadband mixer |
| CN109714005A (en) * | 2018-12-25 | 2019-05-03 | 电子科技大学 | A kind of restructural double frequency-band frequency mixer |
| CN110535441A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-isolation broadband millimeter-wave frequency mixer applied to 5G communication |
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| CN111245371A (en) * | 2020-03-06 | 2020-06-05 | 重庆百瑞互联电子技术有限公司 | Power mixer, radio frequency circuit, device and equipment |
| CN113965165A (en) * | 2021-10-22 | 2022-01-21 | 东南大学 | Broadband high-fundamental-wave suppression double-balance self-mixing structure millimeter wave quadrupler |
| CN114696844A (en) * | 2020-12-31 | 2022-07-01 | 炬芯科技股份有限公司 | Wireless signal transmitting device with harmonic suppression function and harmonic suppression method |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7120414B2 (en) * | 2003-04-28 | 2006-10-10 | Samsung Electronics Co., Ltd. | Circuit and method for receiving and mixing radio frequencies in a direct conversion receiver |
| CN101258674A (en) * | 2005-08-04 | 2008-09-03 | 加利福尼亚大学董事会 | Origami cascaded topology for analog and mixed-signal applications |
| US20090221259A1 (en) * | 2008-02-28 | 2009-09-03 | Hitachi, Ltd. | Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it |
| JP2011176721A (en) * | 2010-02-25 | 2011-09-08 | Hitachi Ltd | Mixer circuit, transmission circuit employing the same, and sub-millimeter-wave/millimeter-wave communication terminal |
| CN102412785A (en) * | 2011-11-30 | 2012-04-11 | 清华大学 | Oscillator with transformer-type noise filter |
| US8861627B2 (en) * | 2009-07-15 | 2014-10-14 | Fujitsu Limited | Direct mm-wave m-ary quadrature amplitude modulation (QAM) modulator operating in saturated power mode |
| CN104104336A (en) * | 2014-06-18 | 2014-10-15 | 东南大学 | Broadband radio frequency front end circuit with noise cancellation capability and low power consumption |
| CN104167993A (en) * | 2014-08-28 | 2014-11-26 | 中国科学技术大学 | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted |
| WO2015080930A1 (en) * | 2013-11-26 | 2015-06-04 | Washington State University | Local oscilator distribution and phase shifting circuits |
| CN105577122A (en) * | 2015-12-17 | 2016-05-11 | 上海集成电路研发中心有限公司 | High-linearity active double-balanced mixer |
| CN106341087A (en) * | 2016-08-30 | 2017-01-18 | 吴韵秋 | Frequency mixer |
-
2017
- 2017-05-12 CN CN201710334207.6A patent/CN107231129B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7120414B2 (en) * | 2003-04-28 | 2006-10-10 | Samsung Electronics Co., Ltd. | Circuit and method for receiving and mixing radio frequencies in a direct conversion receiver |
| CN101258674A (en) * | 2005-08-04 | 2008-09-03 | 加利福尼亚大学董事会 | Origami cascaded topology for analog and mixed-signal applications |
| US20090221259A1 (en) * | 2008-02-28 | 2009-09-03 | Hitachi, Ltd. | Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it |
| US8861627B2 (en) * | 2009-07-15 | 2014-10-14 | Fujitsu Limited | Direct mm-wave m-ary quadrature amplitude modulation (QAM) modulator operating in saturated power mode |
| JP2011176721A (en) * | 2010-02-25 | 2011-09-08 | Hitachi Ltd | Mixer circuit, transmission circuit employing the same, and sub-millimeter-wave/millimeter-wave communication terminal |
| CN102412785A (en) * | 2011-11-30 | 2012-04-11 | 清华大学 | Oscillator with transformer-type noise filter |
| WO2015080930A1 (en) * | 2013-11-26 | 2015-06-04 | Washington State University | Local oscilator distribution and phase shifting circuits |
| CN104104336A (en) * | 2014-06-18 | 2014-10-15 | 东南大学 | Broadband radio frequency front end circuit with noise cancellation capability and low power consumption |
| CN104167993A (en) * | 2014-08-28 | 2014-11-26 | 中国科学技术大学 | Differential low-power consumption and low noise amplifier with active transconductance enhancement and noise counteraction technology adopted |
| CN105577122A (en) * | 2015-12-17 | 2016-05-11 | 上海集成电路研发中心有限公司 | High-linearity active double-balanced mixer |
| CN106341087A (en) * | 2016-08-30 | 2017-01-18 | 吴韵秋 | Frequency mixer |
Non-Patent Citations (8)
| Title |
|---|
| B. HUANG等: "Millimeter-Wave Low Power and Miniature CMOS Multicascode Low-Noise Amplifiers with Noise Reduction Topology", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
| K. SUN等: "A 10.8-GHz CMOS Low-Noise Amplifier Using Parallel-Resonant Inductor", 《2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM》 * |
| L. A. MACEACHERN等: "Low voltage mixer biasing using monolithic integrated transformer dc-coupling", 《1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)》 * |
| M. BASHIR等: "A current driven wideband low noise 2x subharmonic mixer in 0.18-µm CMOS technology", 《2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL, COMPUTER AND COMMUNICATION TECHNOLOGIES (ICECCT)》 * |
| Y. CHANG等: "A K-band high-gain down-converter mixer using cross couple pair active load", 《2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC)》 * |
| 宋佳敏: "毫米波上变频混频器芯片设计", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 张琼娜等: "一种适用于零中频接收机的CMOS高IIP2混频器", 《微电子学》 * |
| 罗丕进: "基于低电源电压应用的一种混频器的设计", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
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