CN107230816A - A kind of terahertz filter and its processing method - Google Patents
A kind of terahertz filter and its processing method Download PDFInfo
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- CN107230816A CN107230816A CN201710325276.0A CN201710325276A CN107230816A CN 107230816 A CN107230816 A CN 107230816A CN 201710325276 A CN201710325276 A CN 201710325276A CN 107230816 A CN107230816 A CN 107230816A
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- core body
- silicon chip
- package casing
- gold
- guide hole
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a kind of terahertz filter, belong to wave filter technology field.It includes core body and package casing, there is the rectangular waveguide cavity filter structure processed based on MEMS and deep reaction ion etching technology in core body, there is the core body chamber consistent with the outside specification of core body in package casing, package casing is fully wrapped around by core body, the two ends of core body chamber are respectively provided with straight line shape guide hole, one end of guide hole connects with the waveguide cavity of core body, the other end of guide hole is opened on the outer surface of package casing, guide hole is in a straight line with waveguide cavity, and the radial section of guide hole is consistent with the radial section size of waveguide cavity.Terahertz filter of the present invention both can guarantee that filtering performance, be a kind of important improvement to prior art while having fabulous intensity again.
Description
Technical field
The present invention relates to wave filter technology field, a kind of terahertz filter and its processing method are particularly related to.
Background technology
THz wave is one kind of " light " energy, refers to wavelength between 3 μm to 1000 μm, and frequency is 0.1~10THz
, the electromagnetic wave between microwave and infrared ray.The peculiar property that ripple has (can write a Chinese character in simplified form and make THz) to Terahertz, make it
The field such as astrophysics, material science, biomedicine, environmental science, spectrum and imaging technique, information science technology has extensively
General application.At present, THz wave technology has been applied in many fields, and future also has unlimited possibility.
THz wave wave filter is examined as function element important in electronic system in Terahertz communication system, Terahertz
It is widely used in examining system.In the practical application of THz wave, due to all there is noise in most application environment
Etc. influence factor, it is therefore desirable to filter out unwanted frequency and noise using THz wave wave filter, obtain in practical application
Required terahertz signal, to improve the overall performance of electronic system.In recent years, THz wave have been achieved for it is a series of enter
Exhibition, either academia or industrial quarters, Terahertz Technology turn into focus widely studied in world wide gradually.
Terahertz filter of the prior art mainly include core body and package casing two parts, but the material of core body compared with
Crisp, this causes terahertz filter of the prior art to be easy to damage.
The content of the invention
In view of this, it is an object of the invention to propose a kind of terahertz filter and its processing method, it can be to too
The core body of hertz wave filter provides more excellent protection, strengthens the intensity and service life of terahertz filter.
Based on above-mentioned purpose, the technical scheme that the present invention is provided is：
A kind of terahertz filter, comprising core body and package casing, minimum compact mechanism is in 10 micron dimensions, core in core body
Having in vivo in the waveguide cavity processed based on MEMS and deep reaction ion etching technology, package casing is had and core
The consistent core body chamber of the outside specification of body, core body chamber is respectively provided with cavity wall in all directions, and core body is located at core body intracavitary, envelope
Casing is fully wrapped around by core body, and the two ends of core body chamber are respectively provided with straight line shape guide hole, one end of guide hole and the waveguide of core body
Chamber connects, and the other end of guide hole is opened on the outer surface of package casing, and guide hole is in a straight line with waveguide cavity, the footpath of guide hole
It is consistent with the radial section size of waveguide cavity to section.
Alternatively, package casing is included has in the upper package casing and lower package casing of symmetrical configuration, upper package casing
There are lower impressions, core body chamber and guide hole are collectively formed by upper impression and lower impressions in upper impression, lower package casing.
In addition, the present invention also provides a kind of terahertz filter manufacture method, this method is used to manufacture as above any one institute
The terahertz filter stated, this method comprises the following steps：
(1) using MEMS (Micro-Electro-Mechanical System, abbreviation MEMS), and based on deep
Reactive ion etching (Deep Reactive Ion Etching, abbreviation DRIE) technology manufactures the core body of terahertz filter；
(2) using computer digital control machine tool (Computerized Numerical ControlMachine, abbreviation
CNC) process the external structure of terahertz filter package casing and include the internal structure including core body chamber and guide hole；
(3) core body is encapsulated in package casing, makes package casing that core body is fully wrapped around.
Alternatively, the concrete mode of step (1) is：
(101) first time photoetching is carried out to the upper surface of the first silicon chip using the first mask plate, formed on the first silicon chip
First barrier layer；
(102) on the basis of the first barrier layer, using MEMS, and based on deep reaction ion etching technology to the
One silicon chip carries out first time etching, and the groove for constituting waveguide cavity is formed on the upper surface of the first silicon chip；
(103) second of photoetching is carried out to the first silicon chip using the second mask plate, covering groove is formed on the first silicon chip
, the second barrier layer for marking individual devices profile on the first silicon chip；
(104) on the basis of the second barrier layer, using MEMS, and based on deep reaction ion etching technology to the
One silicon chip carries out second of etching up to silicon chip is cut through, and the first silicon chip is divided into individual devices in advance；
(105) the first silicon chip is carried out gold-plated so that the upper surface of each individual devices and side are covered in the first silicon chip
Lid Gold plated Layer；
(106) it is another take with first the second silicon chip of die size identical, carried out in the one side of the second silicon chip gold-plated；
(107) gilding of the second silicon chip is fitted with the upper surface of the first silicon chip, and by gold-gold bonding technique by
One silicon chip and the second silicon chip combine；
(108) third time photoetching is carried out to the second silicon chip using with the second mask pattern identical mask plate, second
Formed and individual devices profile identical pattern on silicon chip；
(109) scribing is to form core body.
Alternatively, concrete mode gold-plated in step (105) and step (106) is：
(X01) using physical vapour deposition (PVD) (Physical Vapor Deposition, abbreviation PVD) technology in silicon chip
Surface sputters the first layer gold of one layer of 50~200 nanometer thickness；
(X02) electroplating technology is utilized, second gold medal of one layer of 100~2000 nanometer thickness of re-plating on the surface of the first layer gold
The gross thickness of layer, the first layer gold and the second layer gold is at least 1 micron；
(X03) using chemically mechanical polishing (Chemical Mechanical Polishing, abbreviation CMP) technique to the
The surface of two layer gold is polished so that the surface smoothness of the second layer gold is in 50 nanometer ranges.
Alternatively, the speed of etching is 2~4 [mus for the first time.
Alternatively, package casing includes the upper package casing and lower package casing of symmetrical configuration, and upper package casing has upper
Die cavity, lower package casing has lower impressions, and upper impression and lower impressions are collectively formed outside comprising the encapsulation including core body chamber and guide hole
Shell internal structure；The concrete mode of step (2) is：
(201) using computer digital control machine tool with outside the tying of the upper package casing of machining accuracy processing within 10 microns
Structure and upper impression；
(202) tied using computer digital control machine tool with lower the outside of package casing of machining accuracy processing within 10 microns
Structure and lower impressions；
(203) layer of metal gold is plated respectively on the surface of upper package casing and lower package casing.
From the above it can be seen that the beneficial effects of the present invention are：
1st, the core body length of terahertz filter is identical with the length of package casing in the prior art, the two ends of package casing
Through hole is provided with, core body is inserted in through hole, the two ends of core body and the outer surface flush of package casing, therefore the two ends of core body are
It is exposed.So, because core body material is fragile, therefore terahertz filter of the prior art is extremely easily damaged.Have
In consideration of it, terahertz filter of the present invention is by the contraction in length of core body, so that package casing is fully wrapped around by core body, improve
The intensity of whole terahertz filter, increases the service life of terahertz filter.
2nd, because the package casing in the present invention is fully wrapped around by core body, therefore the present invention is provided with also in package casing
Guide hole, so that the waveguide cavity in core body be in communication with the outside.
3rd, because Terahertz frequency is high, minor matters structure is tiny in wave filter, and dimensional structure is in 10 micron dimensions, and tradition is high-precision
Spend CNC technologies difficulty of processing big, therefore the present invention proposes a kind of brand-new core body processing side based on MEMS and DRIE technologies
Method, this method ensure that the precision and surface smoothness of groove so that the perpendicularity of recess sidewall is more than 89 degree, solve existing
There is the problem of technology processing method is difficult to process small size core body.
In a word, the invention provides a kind of terahertz filter of brand new, and devised entirely for this wave filter
New processing method, so that terahertz filter of the present invention both can guarantee that filtering performance, while there is fabulous intensity again,
It is a kind of important improvement to prior art.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of structural representation of terahertz filter in the embodiment of the present invention；
Fig. 2 is the structural representation of core body in Fig. 1；
Fig. 3 is Fig. 2 A faces sectional view；
Fig. 4~12 are a kind of core of each step of terahertz filter manufacture method in the embodiment of the present invention
Schematic diagram；
Figure 13 is the structural representation of core body internal wave guide cavity.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
As shown in Figures 1 to 3, a kind of terahertz filter, comprising core body 2 and package casing 1, minimal structure chi in core body 2
It is very little that there is the waveguide cavity processed based on MEMS and deep reaction ion etching technology in 10 micron dimensions, core body 2
21, waveguide cavity 21 is interior to have diaphragm 22, and package casing 1 is interior, and there is the core body chamber consistent with the outside specification of core body 2 (not to scheme
Show, i.e. position in Fig. 1 occupied by core body 2), core body chamber is respectively provided with cavity wall in all directions, and core body is located at core body intracavitary, envelope
Casing 1 is fully wrapped around by core body 2, and the two ends of core body chamber are respectively provided with straight line shape guide hole 11, one end and the core body 2 of guide hole 11
Waveguide cavity 21 connect, the other end of guide hole 11 is opened on the outer surface of package casing 1 (i.e. aperture 12 in Fig. 1), guide hole 11
It is in a straight line with waveguide cavity 21, the radial section of guide hole 11 is consistent with the radial section size of waveguide cavity 21.
Alternatively, package casing is included has in the upper package casing and lower package casing of symmetrical configuration, upper package casing
There are lower impressions, core body chamber and guide hole are collectively formed by upper impression and lower impressions in upper impression, lower package casing.
A kind of terahertz filter manufacture method, this method is used to manufacture terahertz filter as above described in any one,
This method comprises the following steps：
(1) MEMS is used, and based on the core body of deep reaction ion etching technology manufacture terahertz filter；
(2) process the external structure of terahertz filter package casing using computer digital control machine tool and include core
Internal structure including body cavity and guide hole；
(3) core body is encapsulated in package casing, makes package casing that core body is fully wrapped around.
Alternatively, the concrete mode of step (1) is：
(101) first time photoetching is carried out to the upper surface of the first silicon chip using the first mask plate, formed on the first silicon chip
First barrier layer (see Fig. 4)；
(102) on the basis of the first barrier layer, using MEMS, and based on deep reaction ion etching technology to the
One silicon chip carries out first time etching, and the groove for constituting waveguide cavity is formed on the upper surface of the first silicon chip (see Fig. 5)；
(103) second of photoetching is carried out to the first silicon chip using the second mask plate, covering groove is formed on the first silicon chip
, the second barrier layer for marking individual devices profile on the first silicon chip (see Fig. 6)；
(104) on the basis of the second barrier layer, using MEMS, and based on deep reaction ion etching technology to the
One silicon chip carries out second of etching up to silicon chip is cut through, and the first silicon chip is divided into individual devices in advance (see Fig. 7)；
(105) the first silicon chip is carried out gold-plated so that the upper surface of each individual devices and side are covered in the first silicon chip
Lid Gold plated Layer (see Fig. 8)；
(106) it is another take with first the second silicon chip of die size identical, carried out in the one side of the second silicon chip gold-plated (see figure
9)；
(107) gilding of the second silicon chip is fitted with the upper surface of the first silicon chip, and by gold-gold bonding technique by
One silicon chip and the second silicon chip combine (see Figure 10)；
(108) third time photoetching is carried out to the second silicon chip using with the second mask pattern identical mask plate, second
Formed and individual devices profile identical pattern on silicon chip (see Figure 11)；
(109) scribing is to form core body (see Figure 12).
Alternatively, concrete mode gold-plated in step (105) and step (106) is：
(X01) the first layer gold of one layer of 50~200 nanometer thickness is sputtered on the surface of silicon chip using physical gas phase deposition technology；
(X02) electroplating technology is utilized, second gold medal of one layer of 100~2000 nanometer thickness of re-plating on the surface of the first layer gold
The gross thickness of layer, the first layer gold and the second layer gold is at least 1 micron；
(X03) surface of the second layer gold is polished using CMP process so that the surface of the second layer gold
Flatness is in 50 nanometer ranges.
Alternatively, the speed of etching is 2~4 [mus for the first time.
Alternatively, package casing includes the upper package casing and lower package casing of symmetrical configuration, and upper package casing has upper
Die cavity, lower package casing has lower impressions, and upper impression and lower impressions are collectively formed outside comprising the encapsulation including core body chamber and guide hole
Shell internal structure；The concrete mode of step (2) is：
(201) using computer digital control machine tool with outside the tying of the upper package casing of machining accuracy processing within 10 microns
Structure and upper impression；
(202) tied using computer digital control machine tool with lower the outside of package casing of machining accuracy processing within 10 microns
Structure and lower impressions；
(203) layer of metal gold is plated respectively on the surface of upper package casing and lower package casing.
Finally, present embodiment part provides the concrete case of several wave filters manufactured in aforementioned manners, makes
Its waveguide cavity configuration of the core body gone out is as shown in figure 13：
The design center frequency of following wave filter is 340GHz, and waveguide mouth structure size is 0.355mm*0.71mm,
The length of guide hole 11 is 6.8mm, and the size of core body 2 is 1.5mm*1mm*2.2mm, and the length of package casing 1 is
20.12mm。
A) structure 1301 is 0.04mm, and structure 1302 is 0.06mm, and structure 1303 is 0.06mm, and structure 1304 is 17mm,
Structure 1305 is 0.22mm, and structure 1306 is 0.24mm, and structure 1307 is 0.46mm, and structure 1308 is 0.52mm.Gained is filtered
The practical center frequency of device is 340GHz, with a width of 20GHz, is less than 1dB with interior Insertion Loss, return loss is more than 20dB.
B) structure 1301 is 0.04mm, and structure 1302 is 0.06mm, and structure 1303 is 0.06mm, and structure 1304 is 17mm,
Structure 1305 is 0.22mm, and structure 1306 is 0.24mm, and structure 1307 is 0.44mm, and structure 1308 is 0.5mm.Gained wave filter
Practical center frequency be 338GHz, with a width of 19.5GHz, be less than 1dB with interior Insertion Loss, return loss is more than 20dB,
C) structure 1301 is 0.04mm, and structure 1302 is 0.06mm, and structure 1303 is 0.06mm, and structure 1304 is 17mm,
Structure 1305 is 0.22mm, and structure 1306 is 0.24mm, and structure 1307 is 0.42mm, and structure 1308 is 0.48mm.Gained is filtered
The practical center frequency of device is 342GHz, with a width of 20.6GHz, is less than 1dB with interior Insertion Loss, return loss is more than 20dB.
It can be seen that, there is good performance using wave filter made from the inventive method.
Those of ordinary skills in the art should understand that：The discussion of any of the above embodiment is exemplary only, not
It is intended to imply that the scope of the present disclosure (including claim) is limited to these examples.Within the spirit and principles of the invention,
To any omission made for any of the above embodiments, modification, equivalent substitution, improvement etc., should be included in protection scope of the present invention it
It is interior.
Claims (7)
1. a kind of terahertz filter, includes core body and package casing, it is characterised in that have in the core body based on micro electronmechanical
Have and institute in the rectangular waveguide cavity filter structure that system and deep reaction ion etching technology are processed, the package casing
The consistent core body chamber of the outside specification of core body is stated, the core body chamber is respectively provided with cavity wall, the core body position in all directions
In the core body intracavitary, the package casing is fully wrapped around by the core body, and the two ends of the core body chamber are respectively provided with straight line
Shape guide hole, one end of the guide hole connects with the waveguide cavity of the core body, and the other end of the guide hole is opened on outside the encapsulation
The outer surface of shell, the guide hole is in a straight line with the waveguide cavity, the radial section of the guide hole and the waveguide cavity
Radial section size it is consistent.
2. terahertz filter as claimed in claim 1, it is characterised in that the package casing includes the upper envelope of symmetrical configuration
Having in casing and lower package casing, the upper package casing has lower impressions in upper impression, the lower package casing, described
Core body chamber and guide hole are collectively formed by the upper impression and lower impressions.
3. a kind of terahertz filter manufacture method, it is characterised in that for manufacturing as any one of claim 1 and 2
Terahertz filter, comprise the following steps：
(1) MEMS is used, and based on the core body of deep reaction ion etching technology manufacture terahertz filter；
(2) process the external structure of terahertz filter package casing using computer digital control machine tool and include core body chamber
With the internal structure including guide hole；
(3) core body is encapsulated in the package casing, makes the package casing that the core body is fully wrapped around.
4. terahertz filter manufacture method according to claim 3, it is characterised in that the concrete mode of step (1) is：
(101) first time photoetching is carried out to the upper surface of the first silicon chip using the first mask plate, formed on first silicon chip
First barrier layer；
(102) on the basis of first barrier layer, using MEMS, and based on deep reaction ion etching technology to institute
State the first silicon chip and carry out first time etching, the groove for constituting waveguide cavity is formed on the upper surface of first silicon chip；
(103) second of photoetching is carried out to first silicon chip using the second mask plate, covering is formed on first silicon chip
The groove, the second barrier layer for marking individual devices profile on first silicon chip；
(104) on the basis of second barrier layer, using MEMS, and based on deep reaction ion etching technology to institute
State the first silicon chip and carry out second of etching up to silicon chip is cut through, first silicon chip is divided into individual devices in advance；
(105) first silicon chip is carried out gold-plated so that the upper surface and side of each individual devices in first silicon chip
Cover Gold plated Layer；
(106) it is another take with the second silicon chip of the first die size identical, carried out in the one side of second silicon chip gold-plated；
(107) gilding of second silicon chip is fitted with the upper surface of first silicon chip, and passes through gold-gold bonding technique
First silicon chip and the second silicon chip are combined；
(108) third time photoetching is carried out to second silicon chip using with the second mask pattern identical mask plate,
Formed and the individual devices profile identical pattern on second silicon chip；
(109) scribing is to form the core body.
5. terahertz filter manufacture method according to claim 4, it is characterised in that step (105) and step (106)
Described in gold-plated concrete mode be：
(X01) the first layer gold of one layer of 50~200 nanometer thickness is sputtered on the surface of silicon chip using physical gas phase deposition technology；
(X02) electroplating technology is utilized, second layer gold of one layer of 100~2000 nanometer thickness of re-plating on the surface of the first layer gold,
The gross thickness of first layer gold and the second layer gold is at least 1 micron；
(X03) surface of second layer gold is polished using CMP process so that second layer gold
Surface smoothness is in 50 nanometer ranges.
6. terahertz filter manufacture method according to claim 4, it is characterised in that the speed of the first time etching
For 2~4 [mus.
7. terahertz filter manufacture method according to claim 3, it is characterised in that the package casing includes structure
Symmetrical upper package casing and lower package casing, the upper package casing have upper impression, and the lower package casing has mo(u)ld bottom half
Chamber, the upper impression and lower impressions are collectively formed comprising the package casing internal structure including the core body chamber and guide hole；Step
(2) concrete mode is：
(201) the outside of the upper package casing is processed using computer digital control machine tool with machining accuracy within 10 microns to tie
Structure and upper impression；
(202) the outside of the lower package casing is processed using computer digital control machine tool with machining accuracy within 10 microns to tie
Structure and lower impressions；
(203) layer of metal gold is plated on the surface of package casing and lower package casing respectively on described.
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| CN111653856A (en) * | 2020-06-24 | 2020-09-11 | 中国电子科技集团公司第四十一研究所 | Ceramic rectangular terahertz waveguide tube core, waveguide assembly and preparation method thereof |
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| Publication number | Publication date |
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| CN107230816B (en) | 2019-04-26 |
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