CN107227491A - A kind of polygon ingot casting and the polycrystalline silicon ingot or purifying furnace for manufacturing polygon ingot casting - Google Patents
A kind of polygon ingot casting and the polycrystalline silicon ingot or purifying furnace for manufacturing polygon ingot casting Download PDFInfo
- Publication number
- CN107227491A CN107227491A CN201710542257.3A CN201710542257A CN107227491A CN 107227491 A CN107227491 A CN 107227491A CN 201710542257 A CN201710542257 A CN 201710542257A CN 107227491 A CN107227491 A CN 107227491A
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- CN
- China
- Prior art keywords
- crucible
- polygon
- ingot
- ingot casting
- silicon ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention proposes a kind of polygon ingot casting of number of sides more than 4 and manufactures the foundry furnace of polygon silicon ingot, and the ingot furnace includes cylindrical furnace, heat-insulation cage, side heater, crucible, crucible side guard plate, crucible bottom backplate, condensation block；The rectangular side wall number of crucible is n；The side guard plate of crucible has n face, and n side wall of crucible is corresponded to respectively；The bottom backplate of crucible is the polygon that side number is n.There is n face the side of heat-insulation cage, and n side wall of crucible is corresponded to respectively.There is n face the side of side heater, and n side wall of crucible is corresponded to respectively.Condensation block is the polygon that side number is n.N ＞ 4.Crucible and thermal field in the present invention, castable to produce the multiaspect column silicon ingot that side is more than four sides, with respect to the silicon ingot of four side columns, the column silicon ingot in more side faces, single stove charge is more, yield is higher, productivity ratio is higher.The utilization rate and yield of existing cylindrical furnace are improved, production cost is reduced.
Description
Technical field
The present invention relates to polysilicon chip, casting single crystal silicon chip manufacture field, and in particular to a kind of polygon ingot casting and manufacture
The polycrystalline silicon ingot or purifying furnace of polygon ingot casting.
Background technology
The existing crucible and thermal field for being used to manufacture crystal silicon ingot casting is square, can only cast out the silicon for being shaped as tetragonal body
Ingot, it is impossible to give full play to the space of cylindrical furnace, have impact on the production efficiency of ingot furnace.
The content of the invention
For above-mentioned the deficiencies in the prior art, the present invention provides a kind of polygon ingot casting and manufactures the polycrystalline of polygon ingot casting
Silicon ingot furnace, can cast out the multiaspect column silicon ingot that side is more than four sides.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of polygon ingot casting, the number of sides of the polygon ingot casting is more than 4.
A kind of polycrystalline silicon ingot or purifying furnace for being used to manufacture above-mentioned polygon ingot casting, including cylindrical furnace, cylindrical furnace
Interior be provided with heat-insulation cage, heat-insulation cage is provided with crucible, and crucible side guard plate and crucible bottom backplate, crucible side shield are coated with the outside of crucible
The side heater for being thermally formed thermal field to crucible is provided with outside plate, crucible bottom backplate bottom is provided with condensation block；The earthenware
The side wall number of crucible is n；The n side wall with crucible is corresponding, and the number of crucible side guard plate is n, and crucible bottom backplate is that side number is n
Polygon, the number of sides of heat-insulation cage is n, and the number of sides of side heater is n, and condensation block is the polygon that side number is n；The n
For positive integer, and more than 4；The side wall of the crucible is corresponding with the side of polygon ingot casting, and both quantity are identical.
The present invention has the advantages that：Crucible and thermal field in the present invention, castable side of producing are more than many of four sides
Face column silicon ingot, with respect to the silicon ingot of four side columns, the column silicon ingot in more side faces, single stove charge is more, yield more
High, productivity ratio is higher.The utilization rate and yield of existing cylindrical furnace are improved, production cost is reduced.
Brief description of the drawings
Fig. 1 the structural representation of present invention；
Label in figure：1st, crystal silicon ingot casting；2nd, cylindrical furnace；3rd, heat-insulation cage；4th, side heater；5th, crucible side guard plate；6、
Crucible；7th, the bottom backplate of crucible；8th, block is condensed.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings.
As shown in figure 1, the polycrystalline silicon ingot or purifying furnace that provides of the present invention include being provided with cylindrical furnace 2, cylindrical furnace 2 every
Crucible 6 is provided with hot cage 3, heat-insulation cage 3, the outside of crucible 6 is coated with crucible side guard plate 5 and crucible bottom backplate 7, crucible side guard plate
The side heater 4 for being thermally formed thermal field to crucible 6 is provided with outside 5, the bottom of crucible bottom backplate 7 is provided with condensation block 8.Crucible
6 rectangular side wall number is n, n ＞ 4；The side guard plate 5 of crucible has n face, and n side wall of crucible 6 is corresponded to respectively；The bottom shield of crucible
Plate 7 is the polygon that side number is n.There is n face the side of heat-insulation cage 3, and n side wall of crucible 6 is corresponded to respectively.Side heater 4
There is n face side, and n side wall of crucible 6 is corresponded to respectively.Condensation block 8 is the polygon that side number is n.Cast using above-mentioned polysilicon
Ingot stove can produce the polygon ingot casting that number of sides is n, and n ＞ 4, the side of polygon ingot casting is corresponding with the side wall of crucible.
Embodiment 1：
1. according to design obtain the heat-insulation cage, crucible side guard plate quantity that number of sides is 5 be 5, side number be 5 condensation block, 5 sides
Heater side is 5 thermal field.
2. silicon material is put into the polygon crucible that side is 5, then it is put in designed thermal field and carries out ingot casting；
3. the polygonal silicon ingot that side is 5 will be obtained by melting long brilliant process eventually through technique.
In the case where not changing original ingot casting body of heater, the polygon crystal silicon ingot volume increase that can be cast out, so as to reach
Single stove charge is more, yield is higher, productivity ratio is higher.Improve the utilization rate and yield of existing cylindrical furnace, reduction production
Cost.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (2)
1. a kind of polygon ingot casting, it is characterised in that the number of sides of the polygon ingot casting is more than 4.
2. a kind of polycrystalline silicon ingot or purifying furnace of polygon ingot casting for described in manufacturing claims 1, including cylindrical furnace, cylinder
It is provided with shape body of heater in heat-insulation cage, heat-insulation cage and is provided with crucible, crucible side guard plate and crucible bottom backplate, earthenware is coated with the outside of crucible
The side heater for being thermally formed thermal field to crucible is provided with outside crucible side guard plate, crucible bottom backplate bottom is provided with condensation block；
Characterized in that, the side wall number of the crucible is n；The n side wall with crucible is corresponding, and the number of crucible side guard plate is n, earthenware
Crucible bottom backplate is the polygon that side number is n, and the number of sides of heat-insulation cage is n, and the number of sides of side heater is n, and condensation block is side number
For n polygon；The n is positive integer, and more than 4；The side wall of the crucible is corresponding with the side of polygon ingot casting, both
Quantity is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542257.3A CN107227491A (en) | 2017-07-05 | 2017-07-05 | A kind of polygon ingot casting and the polycrystalline silicon ingot or purifying furnace for manufacturing polygon ingot casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542257.3A CN107227491A (en) | 2017-07-05 | 2017-07-05 | A kind of polygon ingot casting and the polycrystalline silicon ingot or purifying furnace for manufacturing polygon ingot casting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107227491A true CN107227491A (en) | 2017-10-03 |
Family
ID=59957425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710542257.3A Pending CN107227491A (en) | 2017-07-05 | 2017-07-05 | A kind of polygon ingot casting and the polycrystalline silicon ingot or purifying furnace for manufacturing polygon ingot casting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107227491A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016716A (en) * | 2018-01-09 | 2019-07-16 | 上海东洋炭素有限公司 | A kind of polygon polycrystalline silicon ingot casting device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312280A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Method and device for casting crystal material by using crystal selector |
| CN102312279A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Method for casting crystal by seed crystal induction |
| CN202830226U (en) * | 2012-07-17 | 2013-03-27 | 连云港桃盛熔融石英有限公司 | Large size quartz ceramic crucible |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207537596U (en) * | 2017-07-05 | 2018-06-26 | 镇江仁德新能源科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace |
-
2017
- 2017-07-05 CN CN201710542257.3A patent/CN107227491A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312280A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Method and device for casting crystal material by using crystal selector |
| CN102312279A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Method for casting crystal by seed crystal induction |
| CN202830226U (en) * | 2012-07-17 | 2013-03-27 | 连云港桃盛熔融石英有限公司 | Large size quartz ceramic crucible |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207537596U (en) * | 2017-07-05 | 2018-06-26 | 镇江仁德新能源科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110016716A (en) * | 2018-01-09 | 2019-07-16 | 上海东洋炭素有限公司 | A kind of polygon polycrystalline silicon ingot casting device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171003 |
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| RJ01 | Rejection of invention patent application after publication |