CN107221354A - A kind of programming EFUSE circuit structures suitable for nonvolatile memory - Google Patents
A kind of programming EFUSE circuit structures suitable for nonvolatile memory Download PDFInfo
- Publication number
- CN107221354A CN107221354A CN201710319251.XA CN201710319251A CN107221354A CN 107221354 A CN107221354 A CN 107221354A CN 201710319251 A CN201710319251 A CN 201710319251A CN 107221354 A CN107221354 A CN 107221354A
- Authority
- CN
- China
- Prior art keywords
- efuse
- wlsel
- fuse
- nonvolatile memory
- programming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Abstract
The invention provides a kind of programming EFUSE circuit structures suitable for nonvolatile memory, current source connection bit line selector YSEL, bit line selector YSEL connection EFUSE elements.EFUSE elements are connected and composed by polysilicon resistance R_FUSE and nmos device WLSEL；Bit line selector YSEL connection polysilicon resistance R_FUSE one end, polysilicon resistance R_FUSE other ends connection nmos device WLSEL.Current source directly drives polysilicon resistance R_FUSE, obtains accurately program current；In programming process, nmos device WLSEL only as wordline selection function, is operated in linear zone, it is not necessary to which program current is limited.The circuit structure that the present invention is provided is applied to nonvolatile memory, and program performance is good, and EFUSE element areas are small, and application does not need high voltage, and system effectiveness is high.
Description
Technical field
EFUSE circuit structures are programmed the present invention relates to one kind, more particularly to it is a kind of suitable for nonvolatile memory, base
The programming EFUSE circuit structures driven in electric current.
Background technology
Fig. 1 is tradition programming EFUSE circuit structure, is selected by voltage modulator (Voltage Regulator), bit line
Device (YSEL), R_RUSE (polysilicon resistance, Poly Resistor) and WLSEL (1.2V nmos device) are constituted.
Wherein, R_FUSE (polysilicon resistance, Poly Resistor) and WLSEL (1.2V nmos device) constitutes EFUSE
Element.Resistance values of the R_FUSE before fusing is 100Ohm-300Ohm.Resistance value after fusing is 3KOhm.In structure
WLSEL sizes are 1.8um/0.1um, mainly there is two purposes, and one is wordline selection, and one is limitation program current.
The structure exports a VP voltages using voltage modulator, and EFUSE members are transferred to by YSEL (bit line selector)
On part, usual voltage is in 2.5V or so, and the program current that EFUSE needs is about 1mA~3mA.
There are the following problems for above-mentioned tradition programming EFUSE circuit structure：
1st, because structure uses the EFUSE elements that voltage drives, it is therefore necessary to use WLSEL to carry out current limliting.
2nd, due to WLSEL current limliting, the efficiency of system can be greatly lost, while WLSEL sizes can also cause than larger
EFUSE element areas are very big.
3rd, the design work of VP voltage modulators can be more difficult, while VP change can also be produced partially to the control of program current
Residual quantity, influences program performance.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of suitable for nonvolatile memory, program performance is good,
EFUSE element areas are small, and the high programming EFUSE circuit structures of system effectiveness.
In order to solve the above-mentioned technical problem, the technical scheme is that providing a kind of suitable for nonvolatile memory
Program EFUSE circuit structures, it is characterised in that：Including current source, bit line selector YSEL and EFUSE element, current source connection
Bit line selector YSEL, bit line selector YSEL connection EFUSE elements.
Preferably, the EFUSE elements are connected and composed by polysilicon resistance R_FUSE and nmos device WLSEL；Institute's rheme
Line selector YSEL connection polysilicon resistance R_FUSE one end, polysilicon resistance R_FUSE other ends connection nmos device WLSEL.
Preferably, the current source direct drive polysilicon resistance R_FUSE, obtains accurately program current；Programming process
In, nmos device WLSEL need not be limited program current.
Preferably, in programming process, the nmos device WLSEL is operated in linear zone only as wordline selection function.
Compared with prior art, the programming EFUSE circuit structures suitable for nonvolatile memory that the present invention is provided have
Following beneficial effect：
1st, driven using driven with current sources instead of voltage, accurately program current can be obtained, improve program performance.
2nd, driven with current sources no longer needs to limit program current so that WLSEL can be operated in linear zone, so that
Reduce WLSEL sizes, and then reduce EFUSE element areas.
3rd, the application of the circuit does not need high voltage.
Brief description of the drawings
Fig. 1 programs EFUSE circuit structure for tradition；
The programming EFUSE electrical block diagrams suitable for nonvolatile memory that Fig. 2 provides for the present embodiment.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
The programming EFUSE electrical block diagrams suitable for nonvolatile memory that Fig. 2 provides for the present embodiment, it is described
The optimal chi suitable for the programming EFUSE circuit structures of nonvolatile memory by current source, with small area WLSEL devices
Very little EFUSE elements, bit line selector YSEL etc. are constituted.
Current source connects bit line selector YSEL, bit line selector YSEL connection EFUSE elements.
EFUSE elements are connected and composed by R_FUSE (polysilicon resistance, Poly Resistor) and WLSEL (nmos device).
Bit line selector YSEL connection R_FUSE one end, R_FUSE other ends connection WLSEL.
The programming EFUSE circuit structures suitable for nonvolatile memory that the present embodiment is provided, it is direct using current source
R_FUSE is driven, instead of traditional voltage modulator, very accurately program current can be obtained, while it is good to improve EFUSE
Rate.Meanwhile, driven using electric current in R_FUSE, programming process, WLSEL need not be limited program current, so as to reduce
WESEL device sizes.
WLSEL only as wordline selection function, is operated in linear zone, can be by WLSEL size from traditional 18.1um/
0.1um is reduced to 18um/0.05um, and then makes EFUSE element areas smaller.
To sum up, the programming EFUSE circuit structures that the present embodiment is provided have the following advantages that：
First, driven using driven with current sources instead of voltage, accurately program current can be obtained, improve program performance.
Secondly, driven with current sources no longer needs to limit program current so that WLSEL can be operated in linear zone,
So as to reduce WLSEL sizes, and then reduce EFUSE element areas.
Finally, the application of the circuit does not need high voltage.Because under 3mA program currents, VD voltages can be designed and be less than
0.3V, adds the 0.9V (300Ohm*3mA) on R-FUSE, VDD value can be less than 0.3v+0.9v+0.1V (overdrive voltage)=
1.3V, for whole application circuit, high voltage need not.
Claims (4)
1. a kind of programming EFUSE circuit structures suitable for nonvolatile memory, it is characterised in that：Including current source, bit line
Selector YSEL and EFUSE element, current source connection bit line selector YSEL, bit line selector YSEL connection EFUSE elements.
2. a kind of programming EFUSE circuit structures suitable for nonvolatile memory as claimed in claim 1, its feature exists
In：The EFUSE elements are connected and composed by polysilicon resistance R_FUSE and nmos device WLSEL；The bit line selector YSEL
Connect polysilicon resistance R_FUSE one end, polysilicon resistance R_FUSE other ends connection nmos device WLSEL.
3. a kind of programming EFUSE circuit structures suitable for nonvolatile memory as claimed in claim 2, its feature exists
In：The current source directly drives polysilicon resistance R_FUSE, obtains accurately program current；In programming process, nmos device
WLSEL need not be limited program current.
4. a kind of programming EFUSE circuit structures suitable for nonvolatile memory as claimed in claim 3, its feature exists
In：In programming process, the nmos device WLSEL is operated in linear zone only as wordline selection function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710319251.XA CN107221354A (en) | 2017-05-08 | 2017-05-08 | A kind of programming EFUSE circuit structures suitable for nonvolatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710319251.XA CN107221354A (en) | 2017-05-08 | 2017-05-08 | A kind of programming EFUSE circuit structures suitable for nonvolatile memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107221354A true CN107221354A (en) | 2017-09-29 |
Family
ID=59945132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710319251.XA Pending CN107221354A (en) | 2017-05-08 | 2017-05-08 | A kind of programming EFUSE circuit structures suitable for nonvolatile memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107221354A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7710813B1 (en) * | 2008-03-05 | 2010-05-04 | Xilinx, Inc. | Electronic fuse array |
| US20110012668A1 (en) * | 2009-07-14 | 2011-01-20 | Nick Rosik | Programmable efuse and sense circuit |
| CN102738114A (en) * | 2011-04-11 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Non-salicide polysilicon fuse |
| US20150310930A1 (en) * | 2014-04-23 | 2015-10-29 | Globalfoundries Singapore Pte. Ltd. | Equivalent fuse circuit for a one-time programmable read-only memory array |
-
2017
- 2017-05-08 CN CN201710319251.XA patent/CN107221354A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7710813B1 (en) * | 2008-03-05 | 2010-05-04 | Xilinx, Inc. | Electronic fuse array |
| US20110012668A1 (en) * | 2009-07-14 | 2011-01-20 | Nick Rosik | Programmable efuse and sense circuit |
| CN102738114A (en) * | 2011-04-11 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Non-salicide polysilicon fuse |
| US20150310930A1 (en) * | 2014-04-23 | 2015-10-29 | Globalfoundries Singapore Pte. Ltd. | Equivalent fuse circuit for a one-time programmable read-only memory array |
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| PB01 | Publication | ||
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Application publication date: 20170929 |