CN107215845A - 一种基于pdms振膜的mems静电执行器及制作方法 - Google Patents
一种基于pdms振膜的mems静电执行器及制作方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000004205 dimethyl polysiloxane Substances 0.000 title claims description 36
- 235000013870 dimethyl polysiloxane Nutrition 0.000 title claims description 36
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 title claims description 36
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 title claims description 36
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 title claims description 36
- 239000000463 material Substances 0.000 claims abstract description 6
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims abstract 2
- 229920005573 silicon-containing polymer Polymers 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 53
- 239000010408 film Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000002322 conducting polymer Substances 0.000 claims description 2
- 239000003431 cross linking reagent Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B43/00—Machines, pumps, or pumping installations having flexible working members
- F04B43/02—Machines, pumps, or pumping installations having flexible working members having plate-like flexible members, e.g. diaphragms
- F04B43/04—Pumps having electric drive
- F04B43/043—Micropumps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/036—Micropumps
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Abstract
本发明公开了一种基于聚二甲基硅氧烷(PDMS)振膜的静电执行器及制作方法。该具有静电执行器是以PDMS薄膜作为可以往复运动的高弹性薄膜作为振膜形成执行器部件,与以往全Si静电执行器相比,本发明所述基于PDMS静电执行器不仅可以简化MEMS微泵的加工工艺,降低材料成本,由于其弹性模量比Si小,可降低全Si静电执行器件的驱动电压。
Description
技术领域
本发明属于微机电系统(MEMS)技术领域,具体涉及一种基于PDMS振膜的MEMS静电执行器及制作方法。
背景技术
随着静电驱动方法在MEMS器件中被广泛采用,静电式执行器成为一种重要的驱动器件。其工作原理系利用异性电荷间产生的库仑力作用而产生的机械运动。静电执行器可以采用全Si的工艺,并且能够与IC工艺相兼容,在批量化生产上有很大的优势,且其驱动力较大、功耗低,有很大的应用前景。
基于静电驱动的MEMS微型泵是微流体系统中的关键部件,微泵作为微流体系统的执行部件,在生物、化学、医疗、检疫以及国防等方面构建微分析系统(μTAs)有着广泛的用途。
采用静电驱动可以获得较高的驱动频率,其具有能耗低(一般为毫瓦级)、振动膜片形变易于控制、响应时间短等特点。但是,静电驱动也有驱动电压高(一般大于50V),这与IC电路所用的低电压不兼容;此外,微泵中还需要防止电路短路的绝缘膜,通常需要采用造价昂贵的SOI片作为原材料,大大增加了制造成本。
本发明提出了采用基于PDMS材料作为振膜的MEMS静电执行器,其工艺简单、材料成本远低于Si,且其生物兼容性好。因其弹性模量相对Si薄膜小,可在较低的驱动电压下工作,在生物检测等领域具有较强应用前景。
发明内容
本发明针对传统静电执行器中制造材料昂贵、工艺较为复杂的的问题,提供了一种基于PDMS振膜的MEMS静电执行器及制作方法,该MEMS静电执行器由复合振动薄膜层、下电极层和硅结构层组成,其特征在于,复合振动薄膜层由两层PDMS薄膜层中间夹一层导电薄膜层组成。
所述的PDMS薄膜具有较好弹性,其厚度为100-300微米。
所述复合振动薄膜层中的导电薄膜层为金属或导电氧化物、导电聚合物中的一种。
所述下电极层为非本征半导体的Si薄膜,其厚度为1-100微米。
所述下电极层的上、下界面层分别为绝缘性的薄膜层,以保护下电极层在静电驱动工作时不形成漏电。
所述绝缘性的薄膜层为氧化硅、氧化铝绝缘薄膜材料中的一种。
一种基于PDMS振膜的MEMS静电执行器的制备方法,包括如下步骤:
(1)PDMS薄膜的制备,PDMS按照交联剂与固化剂5:1~15:1的比例混合、固化;
(2)PDMS振膜图形化,采用UV软刻蚀或激光切割等方式对PDMS进行加工;
(3)PDMS膜沉积金属电极层;
(4)沉积绝缘薄膜以使金属电极层有效隔离;
(5)与下电极层通过有机物粘接。
附图说明
图1为基于PDMS振膜的MEMS静电执行器的结构示意图;
01为第一PDMS薄膜层,02为上电极层,03为第二PDMS薄膜层,04为第一绝缘氧化硅,05为硅电极层,06为第二绝缘氧化硅层,07为Si结构层。
具体实施方式
本发明提供了一种基于PDMS振膜的MEMS静电执行器及制作方法,下面结合附图对本发明进一步说明。
一种基于PDMS振膜的MEMS静电执行器,如图1所示,01为第一PDMS薄膜层,02为上电极层,03为第二PDMS薄膜层,04为第一绝缘氧化硅,05为硅电极层,06为第二绝缘氧化硅层,07为Si结构层,上电极的下表面和凹面电极的上表面之间形成闭合运动空间。
所述上电极层02可为金属或导电氧化物、导电聚合物层。其上、下层分别为具有弹性和绝缘性能的PDMS薄膜01、03,以保护上电极02。
所述下电极05为硅薄膜层,其厚度为10-200微米。其下层为具有绝缘性能的氧化硅薄膜04、07,以保护下电极05形成绝缘层。
所述硅层07为起到支撑作用的Si层。
实施例
一种基于PDMS振膜的MEMS静电执行器的制作方法,包括下述步骤:
首先在双面抛光Si上旋涂PDMS,其配比为10:1。然后经真空干燥箱内固化。
在固化好的PDMS薄膜(01)上采用电子束蒸发沉积Au电极层(02)。然后再旋涂PDMS,其配比为10:1。经真空干燥箱内固化,形成PDMS薄膜(03),薄膜厚度为100微米。采用激光切割或模板对PDMS进行刻蚀,以形成电极区域。
采用背面光刻、并对Si进行刻蚀实现泵腔的制备,完成泵腔与PDMS振膜的组装。
选取表面氧化层厚度为300纳米的双面抛光Si硅片用以制作下电极。首先在下电极区域刻蚀振膜腔体,腔体深度为50-100微米。
然后将上述Si片进行热氧化处理以形成对Si层的隔离。
采用刻蚀工艺对Si片进行处理,形成下电极区域。最后,辅助以对准装置,通过胶体将执行器的各个组件采用粘接的方式组装。
Claims (7)
1.一种基于聚二甲基硅氧烷(PDMS)振膜的MEMS静电执行器,由复合振动薄膜层、下电极层和硅结构层组成,其特征在于,复合振动薄膜层由两层PDMS薄膜层中间夹一层导电薄膜层组成。
2.根据权利要求1所述MEMS静电执行器,其特征在于:所述的PDMS薄膜具有较好弹性,其厚度为100-300微米。
3.根据权利要求1所述MEMS静电执行器,其特征在于:所述复合振动薄膜层中的导电薄膜层为金属或导电氧化物、导电聚合物中的一种。
4.根据权利要求1所述MEMS静电执行器,其特征在于:所述下电极层为非本征半导体的Si薄膜,其厚度为1-100微米。
5.根据权利要求1所述MEMS静电执行器,其特征在于:所述下电极层的上、下界面层分别为绝缘性的薄膜层,以保护下电极层在静电驱动工作时不形成漏电。
6.根据权利要求5所述MEMS静电执行器,其特征在于:所述绝缘性的薄膜层为氧化硅、氧化铝绝缘薄膜材料中的一种。
7.权利要求1所述的MEMS静电执行器的制备方法,其特征在于:包括如下步骤:
(1)PDMS薄膜的制备,PDMS按照交联剂与固化剂5:1~15:1的比例混合、固化;
(2)PDMS振膜图形化,采用UV软刻蚀或激光切割等方式对PDMS进行加工;
(3)PDMS膜沉积金属电极层;
(4)沉积绝缘薄膜以使金属电极层有效隔离;
(5)与下电极层通过有机物粘接。
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Cited By (3)
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---|---|---|---|---|
CN107915201A (zh) * | 2017-12-15 | 2018-04-17 | 苏州工业园区纳米产业技术研究院有限公司 | 加热电极埋入式mems器件及其制备方法 |
CN107934906A (zh) * | 2017-12-20 | 2018-04-20 | 爱科赛智能科技(台州)有限公司 | 一种基于柔性薄膜的mems执行器及其制作方法 |
CN112814880A (zh) * | 2021-01-08 | 2021-05-18 | 汤玉生 | 实现注入电荷驱动的微泵芯片结构 |
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Cited By (5)
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CN107915201A (zh) * | 2017-12-15 | 2018-04-17 | 苏州工业园区纳米产业技术研究院有限公司 | 加热电极埋入式mems器件及其制备方法 |
CN107934906A (zh) * | 2017-12-20 | 2018-04-20 | 爱科赛智能科技(台州)有限公司 | 一种基于柔性薄膜的mems执行器及其制作方法 |
CN107934906B (zh) * | 2017-12-20 | 2024-05-14 | 爱科赛智能科技(浙江)有限公司 | 一种基于柔性薄膜的mems执行器及其制作方法 |
CN112814880A (zh) * | 2021-01-08 | 2021-05-18 | 汤玉生 | 实现注入电荷驱动的微泵芯片结构 |
CN112814880B (zh) * | 2021-01-08 | 2023-01-20 | 汤玉生 | 实现注入电荷驱动的微泵芯片结构 |
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