CN107207365A - 包含微晶立方氮化硼(cbn)的多晶立方氮化硼(pcbn)及其制备方法 - Google Patents

包含微晶立方氮化硼(cbn)的多晶立方氮化硼(pcbn)及其制备方法 Download PDF

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CN107207365A
CN107207365A CN201580071876.8A CN201580071876A CN107207365A CN 107207365 A CN107207365 A CN 107207365A CN 201580071876 A CN201580071876 A CN 201580071876A CN 107207365 A CN107207365 A CN 107207365A
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boron nitride
cubic boron
micro
briquetting
crystal
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张凯
苏赖斯·维加拉利
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Diamond Innovations Inc
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Abstract

多晶立方氮化硼压块包括在粘结剂材料基体中具有烧结微晶立方氮化硼的本体。所述微晶立方氮化硼颗粒的尺寸为2微米至50微米。所述微晶立方氮化硼颗粒包括多个亚晶粒,各亚晶粒的尺寸为0.1微米至2微米。所述压块以高压‑高温(HPHT)烧结方法制造。该压块在引入磨损后会出现晶间缺陷形成。亚晶粒基于微碎裂而不是解理机理来促进裂纹扩展,并且在烧结体中,裂纹在晶间扩展而不是在晶粒内扩展,与单晶立方氮化硼相比导致了增加的韧性和改善的磨损特性。所述压块适用于研磨工具。

Description

包含微晶立方氮化硼(CBN)的多晶立方氮化硼(PCBN)及其制 备方法
相关申请的交叉引用
技术领域和工业实用性
本公开内容主要涉及多晶立方氮化硼(PcBN)。具体地,本公开内容涉及制备多晶立方氮化硼粉末以及将这种多晶立方氮化硼粉末加工成研磨工具的方法。所述多晶立方氮化硼粉末表现出多晶晶粒结构,其中多晶立方氮化硼颗粒各自含有许多亚晶粒,并且用这种多晶立方氮化硼粉末制成的研磨工具保留了多晶晶粒结构。
背景
在下面的讨论中,参考某些结构和/或方法。但是,以下参考不应解释为承认这些结构和/或方法构成现有技术。申请人明确保留了证明这种结构和/或方法不符合本发明的现有技术的权利。
立方形式的氮化硼(立方氮化硼(cBN))可用作研磨材料。一种这样的用途是使用粘结系统将颗粒聚集在一起以形成研磨工具例如砂轮。为了应用为研磨材料,特别是在切削工具中,理想的是立方氮化硼改善磨耗、磨损和碎裂(chipping)性能,或至少不会有害地影响这些性能。其它用途包括珩磨、切割和抛光。
加工需要切削工具具有高磨耗性能,低磨损和碎裂,以及长的使用寿命。理想地,工具失效模式仅是磨耗磨损,而不是通过微裂纹或宏观裂纹的扩展而引起的粘结剂和/或立方氮化硼进料中的任何断裂。常规的立方氮化硼基工具使用单晶立方氮化硼粉末,其中各立方氮化硼颗粒是单晶粒。单晶粒结构影响由单晶立方氮化硼进料制成的工具的失效模式,因为裂纹扩展,微裂纹和宏观裂纹两者不仅可能发生为粘结剂中的断裂,而且可能发生单晶立方氮化硼晶粒的解理。这两种失效机制是由单晶立方氮化硼粉末制成的研磨工具性能降低的原因之一。
烧结立方氮化硼涉及高压高温(HPHT)方法,但是烧结这种类型的材料的技术改进主要集中在研究粘结相,几乎没有研究立方氮化硼进料以及进料中的立方氮化硼粉末如何影响烧结和烧结产品的最终性能,特别是在加工应用中。
对立方氮化硼基研磨工具来说有益的是确定立方氮化硼材料的有助于提高磨耗性能和冲击韧性的改进。
发明概述
立方氮化硼可作为微晶网或微米颗粒被合成,其由晶界分离的微米或亚微米(微米)尺寸的多个亚晶粒组成,所以被称为微晶立方氮化硼。参见例如美国专利号2,947,617和5,985,228,其全部内容通过引用的方式并入本文。微晶立方氮化硼比单晶立方氮化硼具有更高的韧性。微晶立方氮化硼的其它有利特性可包括i)不含残余金属催化剂和/或杂质的立方氮化硼颗粒的纯度提高;ii)比标准单晶立方氮化硼粉末韧性高;iii)基于微碎裂而不是解理机制的裂纹扩展模式;iv)在烧结体中,裂纹在晶间扩展而不是在晶粒内扩展;以及v)具有粗糙表面纹理的块状晶体形状。具有包括多晶立方氮化硼晶粒的微观结构的研磨工具包含许多由晶界分离的亚晶粒,其赋予改善的磨耗性能和冲击韧性。
在一个实施方式中,多晶立方氮化硼压块包括在粘结剂材料的基体中具有烧结的微晶立方氮化硼的本体。微晶立方氮化硼颗粒的尺寸为2微米至50微米。微晶立方氮化硼的颗粒包括多个亚晶粒,各亚晶粒的尺寸为0.1微米至2微米。
在另一个实施方式中,制造多晶立方氮化硼压块的方法包括在可控气氛下将微晶立方氮化硼颗粒与粘结剂材料混合以形成粉末共混物,将该共混物装配成用于高压-高温(HPHT)烧结方法的单元结构,并通过向装配件施加高压和高温烧结所述共混物以形成多晶立方氮化硼压块。所述多晶立方氮化硼压块包括本体,其包括在粘结剂材料基体中的烧结微晶立方氮化硼。微晶立方氮化硼是尺寸为2微米至50微米的颗粒。微晶立方氮化硼的颗粒包括多个亚晶粒,各亚晶粒具有小于0.1微米至2微米的尺寸。
附图说明
当结合附图阅读时,将更好地理解上述概要以及实施方式的以下详细描述。应当理解,所描绘的实施方式不限于所示的精确布置和手段。
图1A和1B是微晶立方氮化硼颗粒的示例性实施方式的扫描电子显微镜(SEM)显微照片。
图2A和2B是单晶立方氮化硼颗粒的扫描电子显微镜(SEM)显微照片。
图3A和3B示出了结合多晶立方氮化硼颗粒的烧结体的支撑压块和非支撑压块的示例几何形状。
图4A是示出了由微晶立方氮化硼颗粒制成的样品压块的微观结构的扫描电子显微镜(SEM)显微照片。
图4B是示出了由单晶立方氮化硼颗粒制成的样品压块的微观结构的扫描电子显微镜(SEM)显微照片。
图5A和5B分别为图4A和4B所示的微观结构的放大的扫描电子显微镜(SEM)显微照片。
发明详述
图1A和1B是多晶立方氮化硼颗粒的示例性实施方式的扫描电子显微镜(SEM)显微照片。图1A示出了2000倍放大倍数的多个微晶立方氮化硼颗粒10。微晶立方氮化硼颗粒具有粒径为18微米的D50值。微晶立方氮化硼颗粒10的X射线荧光光谱分析(XRF)表明它们具有基本上为硼和氮化物的组合物,杂质含量为Co(8ppm)、Cr(10ppm)、Fe(69ppm)、Ni(25ppm)和Si(19ppm)。在用于制造这种微晶颗粒的研磨过程中,这些杂质由研磨介质引入到立方氮化硼颗粒中。
微晶立方氮化硼颗粒可作为网或微米颗粒被合成,其由微米或亚微米(微米)尺寸的多个亚晶粒组成并由晶界分离。参见例如美国专利号2,947,617和5,985,228,其全部内容通过引用的方式并入本文。
微晶立方氮化硼颗粒10具有不规则形状和非常粗糙的表面纹理。这种表面纹理在图1B中更容易看出,其是在5000倍放大倍数下的微晶立方氮化硼颗粒的SEM显微照片(具体是在图1A的显微照片的左下角的微晶立方氮化硼颗粒10)。在图1B中,微晶立方氮化硼颗粒10是不规则的,具有非线性边缘和多个高度变化,两者都指示多晶体(即,微晶体),并且其与微晶体中的单晶体晶粒的表面终止状态相关。各微晶颗粒的表面纹理的高度由暴露在颗粒表面上的亚晶粒的晶粒尺寸的1/2来确定。
作为与微晶立方氮化硼颗粒10的比较,在扫描电子显微镜下观察单晶立方氮化硼颗粒。图2A和2B是单晶立方氮化硼颗粒的示例性实施方式的扫描电子显微镜(SEM)显微照片。图2A示出了2500倍放大倍数的多个单晶立方氮化硼颗粒20。所述单晶立方氮化硼颗粒具有18微米的D50值。所述单晶立方氮化硼颗粒20具有指示沿着单晶结构的晶面断裂的表面的平滑和刻面表面纹理。这种表面纹理在图2B中更容易看出,其是4000倍放大倍数的单晶立方氮化硼颗粒20的SEM显微照片,并且还示出了区域25中的晶面的分层。
微晶颗粒具有非常粗糙的外表和块状形状,具有相对较少的直的晶棱,而单晶颗粒显示出混合粗糙和平滑的外表以及具有直的边缘的角形状。
可使用微晶立方氮化硼颗粒作为用于制造或者是作为支撑压块或者是作为非支撑压块的烧结多晶立方氮化硼压块的进料。在示例性的制造方法中,微晶立方氮化硼颗粒在受控气氛例如惰性气氛下与粘结剂材料共混以形成粉末共混物。微晶立方氮化硼颗粒的范围可在1微米至50微米,或者2微米至20微米,或者约18微米,其中尺寸报告为粒度的D50值。粉末共混物的组合物可包括0至50重量%(wt%)的粘结剂,或者10至40重量%。合适的粘结剂材料包括Ti、Al和Zr以及Co和Al的氮化物、碳化物和碳氮化物,例如TiN、TiC、Ti(C,N)、ZrN、AlN,及其混合物。
然后将粉末共混物装配成单元结构,用于本领域已知的高温-高压(HPHT)烧结过程。参见例如美国专利号3,767,371,其全部内容通过引用的方式并入本文。作为HPHT烧结方法的一个实例,粉末共混物可任选地分布成与基材的表面接触,例如硬烧结硬质合金盘。粉末-基材组合封装在薄锆屏蔽件例如容器或金属包装中,其中所述容器或金属包装中的任一种包封粉末和任选的基材以排除和除去氧气。然后,该装配件随后又由高压传递组件(transfering element),例如NaCl基组件包围以形成HPHT单元。可在HPHT单元内组合多个装配件。然后可将HPHT单元放置在HPHT烧结装置中,然后可施加高压和高温(5.5-7GPa,优选为6GPa,以及1300℃-1800℃,优选为1500℃)适当的时间段以烧结粉末共混物并将烧结的粉末共混物粘附到任选基材的表面上。典型的HPHT方法时间范围为30分钟至4小时。在去除压力并使HPHT单元冷却后,可回收复合研磨体。
将微晶立方氮化硼颗粒预先处理的任选步骤可包括在将微晶立方氮化硼颗粒与粘结剂材料混合之前的上述制造方法中。预处理步骤包括在500℃至1300℃,优选900℃的温度下,在氨气气氛中将微晶立方氮化硼颗粒加热不超过2小时,优选为1至2小时。温度和时间可在这些范围内变化,在较高的温度下使用较短的时间,在较低温度下使用较长的时间。预处理步骤清洁微晶立方氮化硼颗粒的表面的任何污染物。为了帮助保持清洁的表面,储存预处理的微晶立方氮化硼颗粒并将其输送到在惰性气体环境中的后续制造方法。此外,如上所述,当预处理的微晶立方氮化硼颗粒与粘结剂材料共混时,共混过程也在受控气氛下进行,例如在惰性气体中进行共混处理。
包括基材的复合研磨体被称为支撑压块。上述制造方法也可以在不存在基材的情况下进行,在这种情况下,回收的复合研磨体不包括基材。这种复合研磨体被称为非支撑压块。图3A和3B分别示出了非支撑压块60和支撑压块70的示例性几何形状。支撑压块70包括本体80,其包括在粘结剂材料的基体中的烧结微晶立方氮化硼。本体80联接到基材90。本体80通过在基材90中的金属相热扩散到本体80中的烧结微晶立方氮化硼颗粒的界面而一体地结合到基材90。非支撑压块60包括本体62,其包括在粘结剂材料的基体中的烧结微晶立方氮化硼。在支撑压块70和非支撑压块60中,烧结体包括多个颗粒。所述多个颗粒中的每个具有多个亚晶粒。如通过MicroTrac粒子表征系统测量的,各亚晶粒具有的尺寸为小于1微米至2微米,或者0.1微米至1.5微米。粒径为1至2微米的典型微晶立方氮化硼颗粒含有约10至约5000个亚晶粒,例如约1000个亚晶粒。
对非支撑压块的样品进行微观结构调查。使用微晶立方氮化硼颗粒作为用于通过HPHT方法制造的进料来制造一种非支撑压块。其它非支撑压块使用单晶立方氮化硼颗粒作为用于通过HPHT方法制造的进料。通过将6.75克具有粒度为18微米的D50值的微晶立方氮化硼(cBN)颗粒(可从Sandvik Hyperion获得,等级为BMP 550 15-25)加载到耐火管容器中来制备第一样品(样品A)。将两片Al盘(0.012”(0.3mm)厚)放置在容器的两端并与未结合的cBN颗粒接触。然后通过在耐火管容器的每一端放置一个石墨盘使得石墨盘与Al盘接触来密封容器,从而形成芯装配件。随后将芯装配件结合到高压单元中,并由单元构件例如Ta盘和盐传压介质丸包封。在55kbar的压力和1400℃的保温温度下进行高压-高温(HPHT)烧结约20分钟的停留时间。停留时间后,首先以50℃/min的温度下降速率冷却单元4分钟,然后用冷却剂终止所有加热能量以快速降温,形成的样品A PcBN本体具有标准四边形刀具几何形状的几何形状。
为了比较,制备第二样品(样品B)作为基线,其使用具有18微米的粒径D50的单晶立方氮化硼(cBN)颗粒来制造(可从Sandvik Hyperion获得,等级为CFB 180)。使用与样品A相同的HPHT加工条件来处理第二样品。样品A(本发明)与样品B(基线)的进料颗粒微观结构不同,即,微晶相对于单晶。表1总结了制造方法的细节。
表1
样品A在图4A中示出,样品B在图4B中示出。通过断裂样品以暴露立方氮化硼层的横截面(通常沿着圆柱形样品的直径)来制备两种样品。然后通过横截面研磨和抛光,随后是离子铣作为最终步骤,进一步将样品A(本发明)和样品B(基线)准备好用于使用SEM的结构表征。
使用扫描电子显微镜(SEM)研究根据上述细节制备的样品A和B的微观结构。使用的SEM设备是HITACHI S4500,设置为25KV电压和12mm工作距离。图4A是示出了样品A的微观结构的SEM显微照片,图4B是示出了样品B的微观结构的SEM显微照片。图4A和4B均为1000倍放大倍数,并且图4A中的量棒(length bar)同样适用于图4B。
图4A和4B的显微照片示出了类似的一般烧结特征。在两个显微照片中,粗糙的立方氮化硼颗粒被精细的立方氮化硼颗粒(以黑色显示)和粘结剂相(以灰色和白色显示)两者隔开。总之,样品A中的烧结颗粒尺寸略小于样品B中的烧结颗粒尺寸。此外,样品A的cBN颗粒与粘结剂相之间的烧结界面(图5A由标记为210的箭头表示)比样品B的(图5B由标记为100的箭头表示)要更粗糙。在这些显微照片中,粗糙度由烧结的cBN晶粒的表面纹理确定。对于两个样品都观察到烧结体中的微裂纹。这些裂纹是通过断裂样品的横截面视图而引起的,如图5A中标有240的箭头所示以及图5B中标有110的箭头所示。
图5A和5B是图4A和4B所示的微观结构的放大显微照片,分别用于样品A和样品B。这些显微照片为5000倍放大倍数,尽管可清楚地区分烧结的PcBN晶粒,但样品A与样品B之间存在微观结构差异。首先,样品A中的烧结颗粒(图5A)的形状比样品B中的烧结颗粒(图5B)更成块状。第二,如图5A中标记为250的箭头所示,可清楚地观察到样品A中每个单独的烧结晶粒内的微晶晶粒(亚晶粒)的对比度。此外,每个微晶晶粒还包括表面上的凹坑或孔隙,其由图5A中标记为230的圆圈表示。孔隙或凹坑的尺寸在纳米范围内。当cBN加工成多晶体时,这些凹坑或孔隙机械地改善了cBN在粘结剂相中的保持率。在图5B中,显微照片中的每个单晶立方氮化硼颗粒基本上是均匀的深色,没有阴影或对比度的变化,因此表明在烧结的单晶立方氮化硼颗粒中没有亚晶粒。第三,在样品A(图5A)中,微晶立方氮化硼颗粒和粘结剂之间的界面比样品B(图5B)中的界面更粗糙。微晶cBN颗粒和粘结剂之间的粗糙度的相对增加是由于样品A中使用的微晶cBN的表面形貌的存在。在这些显微照片中,粗糙度确定为cBN亚晶粒度的约1/2。
最后,如图5A中标记为240的箭头所示,裂纹存在于样品A的粘结剂相中,并且由样品制备中的横截面断裂引起。裂纹在晶粒间围绕单独的微晶立方氮化硼颗粒扩展,而不是在晶粒内扩展并穿过微晶立方氮化硼颗粒。裂纹扩展路径由覆盖显微照片的箭头240表示。这种晶间裂纹扩展行为与在样品B的单晶立方氮化硼中观察到的不同,其中在样品B中裂纹穿透单晶立方氮化硼颗粒以破坏单晶立方氮化硼颗粒,即裂纹在晶粒内扩展。鉴于包括微晶cBN晶粒的样品A比包含单晶cBN晶粒的样品B更坚韧,微晶晶粒表现出通过吸收裂纹能量和/或偏离裂纹扩展路径来终止裂纹穿透的能力。
使用EDX分析样品A和样品B的烧结多晶立方氮化硼体中的微观结构特征的组成。所研究的微观结构区域如图5所示并包括以下内容。灰色区域(300)被认定为二硼化铝(AlB2)。AlB2附近的亮区(310)被认定为氮化铝(AlN)。AlB2和AlN之间的区域(320)是cBN相。区域330是AlB2区域内的岛状领域,其也被探测并确认为cBN晶体(参见谱图4)。基于颜色对比,SEM显微照片定性地表明样品A和样品B均在粘结剂区域中存在比AlN相更多的AlB2相。表1总结了这四个区域的EDX结果,包括组成元素的量(以原子百分比(at.%)表示)以及区域组成的确认。
表1-EDX结果
尽管已经参考具体实施方式,但显而易见的是,在不脱离其精神和范围的情况下,本领域技术人员可设计出其他实施方式和变型。所附权利要求旨在解释为包括所有这些实施方式和等同变化。

Claims (15)

1.多晶立方氮化硼压块,其包括:
本体,其包含在粘结剂材料基体中的烧结微晶立方氮化硼,
其中微晶立方氮化硼是尺寸为2微米至50微米的颗粒,以及
其中微晶立方氮化硼的颗粒包括多个亚晶粒,各亚晶粒的尺寸为0.1微米至2微米。
2.根据权利要求1所述的多晶立方氮化硼压块,其还包括基材,其中所述本体与所述基材一体地结合。
3.根据权利要求1或2所述的多晶立方氮化硼压块,其中各亚晶粒的尺寸为0.5微米至1.5微米。
4.根据权利要求1或2所述的多晶立方氮化硼压块,其中所述微晶立方氮化硼颗粒含有约10至约5000个亚晶粒。
5.根据权利要求1或2所述的多晶立方氮化硼压块,其中所述本体的组合物包含至多50wt%的粘结剂材料。
6.根据权利要求5所述的多晶立方氮化硼压块,其中所述粘结剂材料选自Ti、Al、Zr、Co、Al的氮化物、碳化物以及碳氮化物及其混合物。
7.根据权利要求1或2所述的多晶立方氮化硼压块,其中所述多晶立方氮化硼压块包含具有生长的表面孔隙或凹坑的微晶cBN颗粒以及维度大约为亚晶粒尺寸的一半的表面纹理。
8.制造多晶立方氮化硼压块的方法,该方法包括:
在可控气氛下将微晶立方氮化硼颗粒与粘结剂材料混合以形成粉末共混物;
将该共混物装配成用于高压-高温(HPHT)烧结方法的单元结构;
通过向装配件施加高压和高温烧结所述共混物以形成多晶立方氮化硼压块,
其中所述多晶立方氮化硼压块包括本体,其包括在粘结剂材料基体中的烧结微晶立方氮化硼,
其中所述微晶立方氮化硼是尺寸为1微米至50微米的颗粒,以及
其中微晶立方氮化硼的颗粒包括多个亚晶粒,各亚晶粒具有小于0.1微米至2微米的尺寸。
9.根据权利要求8所述的方法,其中所述单元结构包括具有与所述共混物接触的表面的基材,并且其中所述多晶立方氮化硼压块包括所述基材和与所述基材一体结合的本体。
10.根据权利要求8或9所述的方法,该方法还包括在将所述微晶立方氮化硼颗粒与所述粘结剂材料混合之前,将所述微晶立方氮化硼颗粒在氨气气氛中加热到500℃至1300℃的温度不超过2小时。
11.根据权利要求8或9所述的方法,其中各亚晶粒的尺寸为0.5微米至1.5微米。
12.根据权利要求8或9所述的方法,其中所述微晶立方氮化硼颗粒含有约10至约5000个亚晶粒。
13.根据权利要求8或9所述的方法,其中所述本体的组合物包含至多50wt%的粘结剂材料。
14.根据权利要求13所述的方法,其中所述粘结剂材料选自Ti、Al、Zr、Co、Al的氮化物、碳化物以及碳氮化物及其混合物。
15.根据权利要求8或9所述的方法,其中所述多晶立方氮化硼压块包含具有生长的表面孔隙或凹坑的微晶cBN颗粒以及维度大约为亚晶粒尺寸的一半的表面纹理。
CN201580071876.8A 2014-12-31 2015-12-31 包含微晶立方氮化硼(cbn)的多晶立方氮化硼(pcbn)及其制备方法 Pending CN107207365A (zh)

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