CN107196047A - Broad beam high-gain aerial - Google Patents
Broad beam high-gain aerial Download PDFInfo
- Publication number
- CN107196047A CN107196047A CN201710392359.1A CN201710392359A CN107196047A CN 107196047 A CN107196047 A CN 107196047A CN 201710392359 A CN201710392359 A CN 201710392359A CN 107196047 A CN107196047 A CN 107196047A
- Authority
- CN
- China
- Prior art keywords
- oscillator
- broad beam
- horizontal
- sagging
- polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/14—Reflecting surfaces; Equivalent structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
Broad beam high-gain aerial of the present invention includes the cross oscillator pair for multiple groups of battle array arrangements being arranged on reflecting plate, and the cross oscillator is to the sagging broadband oscillator including being respectively printed on two pieces of medium substrates；Two sagging broadband oscillators are arranged in a crossed manner, oscillator two-arm to be symmetrical arranged inverted L-shaped piece, including vertical section, horizontal-extending section of vertical section top, horizontal-extending section of end is down into bending segment；Parasitic element is set on the upside of the oscillator arms, and the another side of two medium substrate is provided with microstrip line, reflecting plate dual polarization feed.Parasitic element is set on the upside of oscillator of the present invention, single PCB cross oscillators broad beam and matched well is realized, the broad beam broadband PCB cross oscillators group battle array obtains dual polarization, horizontal broad beam and high-gain radiation characteristic.This method realizes simple, low cost, is adapted to batch production, and is also to be applicable and effective for conventional broadband, the design of high-gain element antenna and improvement.
Description
【Technical field】
The present invention relates to a kind of antenna of mobile communication base station equipment and technology, more particularly to broad beam high-gain aerial and
Its technology.
【Background technology】
As network design density constantly increases, mobile communication has realized that signal wide area is continuously covered substantially.However, limited
Limitation in working band and overlay area, macrocellular is difficult to the demand for meeting high data transmission rate and big power system capacity.Compare
Under, 5.8G band bandwidths are wide, capacity is big, propagation characteristic is good, antenna size is small, are especially suitable for the intensive local high speed number of user
According to business.This kind of antenna for base station needs to have large bandwidth (4.97-5.85GHz, BW=16.27%), high-gain and width (water
It is flat) ripple it is wide the characteristics of, to cover large area, service compared with multi-user, so as to obtain good coverage effect and preferably economy
Property.In addition, dual polarization and low section, planarization are also important requirement, to realize polarity diversity MIMO effects and good use
Experience at family.Broadband, low section and dual polarized antenna, common type have a microband paste and half-wave dipole, and the latter's height about four/
One wavelength.When working in 5.8G, because wavelength is short, the section height of half-wave dipole still receives.However, both horizontal ripples
It is wide only 60~70 °, it is impossible to meet more than 90 ° ultra-wide ripple it is wide require, even if oscillator it is sagging be also difficult to meet require.And other are super
Broad beam antenna, the working medium radiation head such as small burnt footpath than parabola antenna, and do not possess low section and ultra wide band characteristic, and feed
Complicated, volume is big.
In view of the plurality of advantages in half-wave a period of time, only need to overcome the wide narrower shortcoming of ripple, you can meet apply needs well.
Realizing the conventional method of half-wave a period of time beam-broadening is, oscillator holding arms downwards and reduction ground board size.However, above method ripple is wide
Broadening effect is limited, can not still meet the wide requirement of interior more than the 90 ° ripple of whole band.
【The content of the invention】
It is contemplated that providing a kind of wide bandwidth, high-gain for communication field, wide ultra-wide ripple, dual polarization, high isolation, low cuing open
Face, low cost, the compact directional antenna for base station easily produced.
The present invention is achieved through the following technical solutions above-mentioned purpose：
By using sagging PCB oscillators design, PCB oscillators end is bent down, and it is symmetrical on the upside of oscillator
A pair of parasitic elements are set, above-mentioned design object is realized.
Specifically, the present invention provides a kind of broad beam high-gain aerial, and it includes being arranged on multiple groups of battle arrays on reflecting plate
The cross oscillator pair of arrangement, the cross oscillator is to the sagging broadband oscillator including being respectively printed on two pieces of medium substrates, two
Sagging broadband oscillator is arranged in a crossed manner, and the two-arm of the sagging broadband oscillator is symmetrical arranged, and the oscillator arms are inverted L-shaped piece, including vertical
Section, the horizontal segment of connection vertical section upper end, horizontal segment end is down into bending segment, and oscillator arms upside sets parasitic element, should
Medium substrate another side is provided with microstrip line, and reflecting plate front or the back side have two-way printing feeding network to be fed.
The present invention, by setting parasitic element on the upside of oscillator, realizes simple oscialltor and existed on the basis of conventional PCB oscillators
5.8G frequency ranges matched well (4.80-6.0GHz, BW=22.22%), with a width of 95 °~133 ° of interior ripple, cross oscillator ripple is wide 85 °
~110 °；Group battle array after horizontal ripple it is wide 80 °~114 °, highest-gain G=16dBi, section height be less than 0.26 λc(λcCentered on
Wavelength), XPD is more than 15dB, and isolation is better than -25dB, and front and rear than being more than 17.5dB, SLL is less than -10.5dB, has reached design
Target.In addition, this method also has thinking novelty, clear principle, method is pervasive, realization is simple, inexpensive, suitable batch production
The features such as, it is the preferred scheme of the conventional broad beam micro-strip paster antenna of substitution, and for conventional broadband, high-gain element antenna
Design and improvement be also to be applicable and effective.
It is preferred that, sharping on the outside of vertical section and horizontal segment corner, part inwardly cuts out a platform in vertical section.
It is preferred that, the bottom of a wherein arm for oscillator arms is provided with breach.
It is preferred that, the parasitic element is symmetrical set on sagging broadband oscillator top along oscillator two-arm trend.
It is preferred that, the parasitic element is the elongate strip that bending segment endpiece is connected to from platform, between having between oscillator arms
Gap.
It is preferred that, the parasitic element is fine rule frame, and its underpart middle position disconnects, in opening one on the outside of oscillator arms
Another horizontal minor matters of end connection, horizontal minor matters end is bent down, substantially parallel with oscillator incisal angle edge, then connecting platform.
It is preferred that, the medium substrate is that thickness, dielectric constant and loss angle are respectively T, εrWith tan δ medium substrate, it is situated between
Matter substrate edges move towards substantially parallel with oscillator side.
It is preferred that, the matrix substrate opens up upward fluting between the oscillator arms of bottom two, extends near platform；Or,
The matrix substrate opens up downward fluting between the oscillator arms of top two, extends to vertical section adjacent upper part.
It is preferred that, the microstrip line is using the sagging oscillator vertical section as ground level, in medium substrate another side along its center
Line direction is set, and its line width is less than ground level width, and a little higher than the latter of original position, and the arm bottom of microstrip line one is upwardly extended,
Part is slightly narrow on microstrip line, when microstrip line is extended at oscillator vertical section upper brace upward vertically, first towards oscillator arms horizontal segment
It is reversely horizontal-extending, separate the vertical leg extended downwardly all the way during to close to the arm platform；And horizontal-extending section is then continued to prolong
Extend at another arm platform of oscillator, then directly bend down and extend a segment length, it is specifically vertical along oscillator arms down
Duan Zhongxin disconnects after extending to its middle part.
It is preferred that, two sagging broadband oscillators arranged in a crossed manner, with ± 45 ° or H/V crossed-symmetricals, two micro-strips of infall
Horizontal-extending section of line is arranged above and below, and opens complementary groove in two medium substrate center lines, and two groove total depths are equal to the height of medium substrate
Degree.Reflecting plate front or the back side have two-way to print feeding network, and the two cross polarization submatrixs to array are fed respectively, net
Total input connecting coaxial cable of network.
It is preferred that, the reflecting plate is metallic plate, and as floor and reflecting plate, perforate thereon is with fixed upright cross oscillator
It is right.It is preferred that, the floor both sides of the edge set metal boundary.
It is preferred that, in the floor left and right sides, one group is symmetrical arranged at least by being combined that the sheet metal of two kinds of configurations is constituted
Body, and it is arranged in floor both sides of the edge by periodic mode.
It is preferred that, the direction that the plurality of cross oscillator extends to spread length along array.It is preferred that, the plurality of intersection is shaken
Son is to alinement battle array or planar array.
It is preferred that, antenna house is externally provided with layered transducer elements, to protect antenna radiator and miscellaneous part.It is preferred that, the day
Irdome is the shell cavity of the common vehicle material formings such as ABS, ASA, PC, TP, PVC, fiberglass.
The positive effect of the present invention is, by taking following measures：1) PCB oscillator shape and size are optimized；2)
Select suitable PCB substrate parameter, such as dielectric constant, loss angle and thickness；3) geometric parameter of oscillator microstrip feed line, bag are optimized
Include transforming section joint number and length and width, short-circuit minor matters size etc.；4) optimization oscillator parasitic element position, shape and size；5) two oscillator
When orthogonal, accurate adjustment microstrip line parameter；6) optimization metal floor size, position, and boundary shape, size and arrangement mode, are obtained
What more conventional scheme was difficult to：First, broadband, is completely covered 5.8G frequency ranges (4.86-5.98GHzz, BW=20.66%)；
2nd, the horizontal ripple of ultra-wide is wide, high-gain, and a width of HPB W=80 °~144 ° of the horizontal ripple of five cell arrays, gain is up to 16dBi；
3rd, ± 45 ° or H/V dual-linear polarizations, high cross polarization ratio (X PD>15dB), high-isolation (| S21|<-25dB)；4th, before higher
Afterwards than with compared with Low sidelobe level, FTBR is more than 17.5dB, and SLL is less than -10.5dB.5th, compared with low section, highly less than 0.26
λC.In addition, this method also has thinking novelty, clear principle, pervasive method, handling ease, low cost, suitable batch production etc.
Feature, is the preferred scheme for realizing broad beam high-gain small cell antennas, and for conventional broadband cross dipole antenna
Design and improvement be also to be applicable and effective.
【Brief description of the drawings】
The schematic diagram that the rectangular coordinate system that Fig. 1 is used by antenna model is defined.
Fig. 2 is the front view of sagging broadband oscillator model of element.
Fig. 3 is the front view of the sagging broadband oscillator model of element with strip minor matters in parallel.
Fig. 4 is the front view of the sagging broadband oscillator model of element with fine rule frame minor matters in parallel.
Fig. 5 is the front view of the model of PCB cross oscillators unit one with strip minor matters in parallel.
Fig. 6 is the front view of the model of PCB cross oscillators unit two with strip minor matters in parallel.
Fig. 7 is the front view of the microstrip-fed model of PCB cross oscillators unit one with strip minor matters in parallel.
Fig. 8 is the front view of the microstrip-fed model of PCB cross oscillators unit two with strip minor matters in parallel.
Fig. 9 is two Orthogonal Composites with strip minor matters in parallel, the side view of microstrip-fed PCB oscillator unit models.
Figure 10 is that orthogonal, the microstrip-fed PCB cross oscillators of the vertical/horizontal with strip minor matters in parallel are placed on floor
Model front view.
Figure 11 is that orthogonal, the microstrip-fed PCB cross oscillators of the vertical/horizontal with strip minor matters in parallel are placed on floor
Model top view.
Figure 12 is ± 45 ° of dual polarization PCB cross oscillator Array Model top views with compound boundary scheme one.
Figure 13 is ± 45 ° of dual polarization PCB cross oscillator Array Model front views with compound boundary scheme one.
Figure 14 is ± 45 ° of dual polarization PCB cross oscillator Array Model side views with compound boundary scheme one.
Figure 15 is ± 45 ° of dual polarization PCB cross oscillator Array Model top views with compound boundary scheme two.
Figure 16 is ± 45 ° of dual polarization PCB cross oscillator Array Model top views with compound boundary scheme three.
Figure 17 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the input of microstrip-fed PCB oscillator units
Impedance ZinFrequency characteristic.
Figure 18 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the standing wave of microstrip-fed PCB oscillator units
Than VSWR curve.
Figure 19 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, half work(of microstrip-fed PCB oscillator units
Rate beam angle HPBW vs. frequency variation relations.
Figure 20 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the gain of microstrip-fed PCB oscillator units
G vs. frequency variation relations.
Figure 21 represents the cell S parameter of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Curve.
Figure 22 represents the unit standing wave of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Than VSWR curve.
Figure 23 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f1=5.15GHz gain patterns.
Figure 24 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f1=5.15GHz gain patterns.
Figure 25 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f2=5.50GHz gain patterns.
Figure 26 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f2=5.50GHz gain patterns.
Figure 27 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f3=5.85GHz gain patterns.
Figure 28 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f3=5.85GHz gain patterns.
Figure 29 represents the horizontal/vertical of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Face half-power beam width HBPW vs.f variation characteristics.
Figure 30 represents the gain G of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Vs.f variation characteristics.
Figure 31 represents the front and rear ratio of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
FTBR vs.f variation characteristics.
Figure 32 is represented by the normalization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Valve level SLL vs.f variation characteristics.
This paper accompanying drawings are, for being expanded on further and understand to the present invention, and to constitute a part for specification, with this
The specific embodiment of invention is used to explain the present invention together, but is not construed as limiting the invention or limits.
【Embodiment】
The preferred embodiment of patent of invention is provided below in conjunction with the accompanying drawings, to describe technical scheme in detail.Here,
Respective drawings will be provided, and the present invention is described in detail.It should be strongly noted that as described herein be preferable to carry out example
It is merely to illustrate and explain the present invention, is not limited to or limits this present invention.
Fig. 1~16 are referred to, the design method of the broad beam high-gain aerial comprises the following steps：
Step one, rectangular coordinate system in space is set up, Fig. 1 is seen；
Step 2, constructs sagging broadband oscillator.First, in XOZ planes, an inverted L-shaped piece is built along+Z-direction, under it
Portion is vertical section 10, and top is horizontal segment 11, and its end is down into bending segment 12；Vertical section 10 and the corner of horizontal segment 11 outside
Part inwardly cuts out a platform 14 in sharping 13, vertical section 10, so constitutes an arm of oscillator.Then, by inverted L-shaped piece with Z
Axle is symmetry axis or so image copying, obtains another arm of oscillator；A small gap 16 is opened in the bottom of a wherein arm, close to axis portion
Code insurance is stayed, and sees Fig. 2 part 10~16；
Step 3, sets up oscillator minor matters in parallel.On the sagging broadband oscillator top of step 2, along oscillator two-arm trend,
A pair of symmetrical parasitic elements are set, and minor matters have two kinds of structures form, the first is elongate strip 20, Fig. 3 is seen, from platform 14
The endpiece of bending segment 12 is connected to, has gap 23 between oscillator arms；Another is fine rule frame 21, and its underpart middle position is broken
Open, connect another horizontal minor matters 22 close to oscillator arms lateral ends in opening, its end is also bent down, the oscillator with step 2
Incisal angle edge is substantially parallel, then connecting platform 14, sees Fig. 4；
Step 4, sets oscillator underlay substrate.Step 2: sagging oscillator and the side of parasitic element of step 3, if
It is respectively T, ε to put a layer thickness, dielectric constant and loss anglerWith tan δ medium substrate 30,40, medium substrate edge and oscillator
While move towards substantially parallel, a kind of embodiment is shown in Fig. 5, matrix substrate 30 from opening up fluting 31 upwards between the oscillator arms of bottom two,
Extend near platform 14；Another embodiment is as shown in fig. 6, matrix substrate 40 is downward from being opened up between the oscillator arms of top two
Fluting 41, extends to the adjacent upper part of vertical section 10；
Step 5, oscillator balanced feeding.Fig. 7 and Fig. 8 are seen, using the sagging oscillator vertical section of step 2 as ground level, in medium
Substrate another side sets a microstrip line 50,60 along its centerline direction, and its line width is less than ground level width, and original position
A little higher than the latter, microstrip line 50,60 1 arm bottoms are upwardly extended, and part 51,61 is slightly narrow on microstrip line, and microstrip line prolongs upward vertically
When extending at oscillator vertical section upper brace, first reversely there is horizontal-extending section 52,62 towards oscillator arms horizontal segment, close to the arm platform
Vertical leg 53,63 is extended downwardly out, and horizontal-extending section is then continued after extending at another arm platform of oscillator, then down
There is straight bending segment 54,64, and disconnection behind its middle part is extended to along oscillator arms vertical section center.
Step 6, constructs cross oscillator pair.By the sagging broadband oscillator of step 5, rotated by axis of its symmetrical centre
+/- 90 °, one ± 45 ° or H/V cross oscillators pair are constituted, to avoid the feeder line of two oscillators from intersecting, two microstrip line water of infall
Flat extension 52,62 is arranged above and below, and opens complementary groove in two PCB medium substrate center lines, and two groove total depths are equal to PCB medium bases
The height of plate, is shown in Fig. 9, Figure 10 and Figure 11；
Step 7, sets bottom reflecting plate.Step 6 cross oscillator to bottom, one piece of metallic plate is set, as ground
Plate and reflecting plate, perforate thereon is with fixed upright cross oscillator pair.Floor both sides of the edge set metal boundary 80, multiple to intersect
Oscillator is to arrangement, the direction that length extends along array；In the floor left and right sides, one group is symmetrical arranged at least by two kinds of configurations
The complex 70,71 of sheet metal composition, and floor both sides of the edge are arranged in by periodic mode, one of which complex is as schemed
Shown gate-shaped complex 71, another is separator plate like complex 70, sees Figure 12,13,14,15 and 16；
Step 8, cross oscillator is to a group battle array.By above-mentioned cross oscillator pair, a basic radiating element alinement battle array is used as
Or planar array, then, feeding network is printed in the floor front of step 7 or back side design two-way, it is orthogonal to the two of array respectively
Polarization submatrix is fed, and total input connecting coaxial cable of network is shown in Figure 13,14,15,16；
Step 9, adds antenna house.A shell medium cavity is designed as antenna house 810, by above-mentioned PCB oscillators, gold
Possession plate, printing feeding network are enveloped, and as antenna house to protect antenna radiator and miscellaneous part, see Figure 14.
As the broad beam high-gain aerial of the present invention obtained by the above method is built, it includes being arranged on multiple on reflecting plate
The cross oscillator pair of group battle array arrangement, the cross oscillator is to the sagging broadband oscillator including being printed on two medium substrates, two
Sagging broadband oscillator is arranged in a crossed manner, and the two-arm of the sagging broadband oscillator is symmetrical arranged, and the oscillator arms are inverted L-shaped piece, including vertical
Section 10, the horizontal segment 11 of connection vertical section upper end, horizontal segment end is down into bending segment 12, and the medium substrate another side is provided with micro-
Band line, reflecting plate front or the back side have two-way printing feeding network to be fed.The plurality of cross oscillator is suitable to spread length
The direction of array extension.
Part is inwardly cut out in the vertical section 10 of the oscillator arms and sharping 13 on the outside of the corner of horizontal segment 11, vertical section 10
There is gap 15 between one platform 14, the vertical section of oscillator two-arm.The bottom of a wherein arm for oscillator arms is provided with breach 16.
The parasitic element is symmetrical set on sagging broadband oscillator top along oscillator two-arm trend.One of which is implemented
Mode, the parasitic element is the elongate strip 20 that the endpiece of bending segment 12 is connected to from platform 14, has gap 23 between oscillator arms.
Another embodiment, the parasitic element is fine rule frame 21, and its underpart middle position disconnects, in opening on the outside of oscillator arms
One end connects another horizontal minor matters 22, and the horizontal end of minor matters 22 is bent down, substantially parallel with oscillator incisal angle edge, then connects flat
Platform 14.
The medium substrate 30,40 is arranged on the side of sagging oscillator and parasitic element, thickness, dielectric constant and loss angle point
Wei not T, εrWith tan δ, medium substrate edge moves towards substantially parallel with oscillator side.
Two sagging broadband oscillators arranged in a crossed manner, with ± 45 ° or H/V crossed-symmetricals, two microstrip line levels of infall
Extension 52,62 is arranged above and below, and opens complementary groove in two medium substrate center lines, and two groove total depths are equal to the height of medium substrate
Degree.Specifically, two matrix substrates 30 in cross oscillator pair one of them open upwards from being opened up between the oscillator arms of bottom two
Groove 31, is extended near platform 14, and another matrix substrate 40 is extended to from fluting 41 downwards is opened up between the oscillator arms of top two
The adjacent upper part of vertical section 10, two medium substrates cooperate arranged in a crossed manner.There is two-way printing feedback at reflecting plate front or the back side
Electric network, respectively the two cross polarization submatrixs to array feed, total input connecting coaxial cable of network.
The microstrip line 50,60 is using the sagging oscillator vertical section as ground level, in medium substrate another side along its center line
Direction is set, and its line width is less than ground level width, and a little higher than the latter of original position, and microstrip line 50,60 1 arm bottoms are prolonged upwards
Stretch, part 51,61 is slightly narrow on microstrip line, when microstrip line is extended at oscillator vertical section upper brace upward vertically, first towards oscillator
Arm horizontal segment reversely has horizontal-extending section 52,62, and vertical leg 53,63 is extended downwardly close to the arm platform, horizontal-extending section after
Renew after extending at another arm platform of oscillator, then have straight bending segment 54,64 down, and prolong along oscillator arms vertical section center
Disconnected after extending its middle part.
The reflecting plate is metallic plate, and as floor and reflecting plate, perforate thereon is with fixed upright cross oscillator pair.
The floor both sides of the edge set metal boundary 80.In the floor left and right sides, one group is symmetrical arranged at least by two kinds of structures
The complex 70,71 of the sheet metal composition of shape, and it is arranged in floor both sides of the edge by periodic mode.
Antenna house is externally provided with layered transducer elements, to protect antenna radiator and miscellaneous part.The antenna house be AB S, ASA,
The shell cavity of the common vehicle material forming such as PC, TP, PVC, fiberglass.
The present invention passes through：1) PCB oscillator shape and size are optimized；2) suitable PCB substrate parameter is selected, such as dielectric is normal
Number, loss angle and thickness；3) geometric parameter of oscillator microstrip feed line, including transforming section joint number and length and width, short-circuit minor matters chi are optimized
It is very little etc.；4) optimization oscillator parasitic element position, shape and size；5) when two oscillators are orthogonal, accurate adjustment microstrip line parameter；6) gold is optimized
Possession board size, position, and boundary shape, size and arrangement mode, obtain what more conventional scheme was difficult to：First, wideband
Band, is completely covered 5.8G frequency ranges (4.86-5.98GHzz, BW=20.66%)；2nd, the horizontal ripple of ultra-wide is wide, high-gain, Unit five
A width of HPB W=80 °~144 ° of the horizontal ripple of array, gain is up to 16dBi；3rd, ± 45 ° or H/V dual-linear polarizations, high cross-pole
Change than (X PD>15dB), high-isolation (| S21|<-25dB)；4th, higher front and rear ratio and sidelobe level, FTBR are more than 17.5dB,
SLL is less than -10.5dB.5th, compared with low section, highly less than 0.26 λC.Design parameter refers to Figure 17~32.
Figure 17 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the input of microstrip-fed PCB oscillator units
Impedance ZinFrequency characteristic.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is impedance Zin, unit is
Ω；Black line represents+45 ° of polarization, and gray line represents -45 ° of polarization；Solid line represents real part Rin, dotted line represents imaginary part Xin.Known by figure,
4.80-6.0GHz frequency ranges, the real and imaginary parts excursion of polarization is respectively：+ 43~+70 Ω, -28~-5 Ω and+34~+
63 Ω, -35~0 Ω, with preferable ultra wide band impedance operator.
Figure 18 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the standing wave of microstrip-fed PCB oscillator units
Than VSWR curve.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is VSWR；Solid line represents+45 ° of polarization,
Dotted line represents -45 °.Known by figure, element antenna is realized preferably at 4.80-6.0GHz frequency ranges (BW=1.2GHz, 22.2%)
Impedance matching, standing-wave ratio VSWR≤2.0 are minimum up to 1.04；Relative bandwidth is respectively 22.2%, close to ultra wide band.
Figure 19 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, half work(of microstrip-fed PCB oscillator units
Rate beam angle HPBW vs. frequency variation relations.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is ripple
Beam width, unit is deg；Solid line represents horizontal plane, and dotted line represents vertical plane；Fair line represents+45 ° of polarization, dotted line represents-
45 ° of polarization.Known by figure, polarised in 4.80-6.0GHz frequency ranges (BW=1.2GHz, 22.2%) frequency range, horizontal plane and vertical plane
Half-power beam width HP BW are respectively 85~108 °/6066 °, 94~110 °/64~78 °, are polarised wide in horizontal plane ripple
HPBW maximums are more than 100 °, and vertical plane ripple is wide more than 60 °.
Figure 20 represents two ± 45 ° of Orthogonal Composites with strip minor matters in parallel, the gain of microstrip-fed PCB oscillator units
Gvs. frequency variation relation.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is gain, and unit is dBi；Light
Slip represents+45 ° of polarization, and dotted line represents -45 ° of polarization.Known by figure, polarise 4.80-6.0GHz frequency ranges (BW=1.2GHz,
22.2%) frequency range, gain is respectively 6.90~8.54dBi, 6.80~8.25dBi, and the gain uniformity of polarization is fine.
Figure 21 represents the cell S parameter of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Curve.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is S parameter amplitude, unit dB；Solid line is reflection system
Number | S11|/|S22|, dotted line is isolation | S22|；Fair line is that real point line is+45 ° of polarization, and dotted line is -45 ° of polarization.By scheming
Know, element antenna realizes preferable impedance matching at 4.86-5.98GHz frequency ranges (BW=1.12GHz, 20.66%), reflect
Coefficient | S11|/|S22|≤- 10dB, minimum to reach -45dB, relative bandwidth is respectively 20.66%, with isolated situation difference very little.And
And, ± 45 ° of polarization interport isolations are less than -25dB, and isolation is more satisfactory.
Figure 22 represents the unit standing wave of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Than VSWR curve.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is VSWR；Fair line represents+45 ° of poles
Change, dotted line represents -45 °.Known by figure, element antenna is realized at 4.86-5.98GHz frequency ranges (BW=1.12GHz, 20.66%)
Preferable impedance matching, standing-wave ratio VS WR≤2.0 are minimum up to 1.02；Relative bandwidth is respectively 20.66%, close to ultra wide band.
Figure 23 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f1=5.15GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>15dB, polarization purity
Preferably.
Figure 24 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f1=5.15GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>18dB, polarization purity
Preferably.
Figure 25 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f2=5.50GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>15dB, polarization purity
Preferably.
Figure 26 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f2=5.50GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>18dB, polarization purity
Preferably.
Figure 27 represents+45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f3=5.85GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>15dB, polarization purity
Preferably.
Figure 28 represents -45 ° of polarization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
In f3=5.85GHz gain patterns.Wherein, solid line is main polarization, and dotted line is cross polarization；Fair line is horizontal plane, dotted line
For vertical plane.Known by figure, horizontal plane ripple is wide, vertical plane ripple is wide narrower, cross polarization XPD in main lobe>18dB, polarization purity
Preferably.
Figure 29 represents the horizontal/vertical of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Face half-power beam width HBPW vs.f variation characteristics.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is
Beam angle, unit degree of being (deg)；Solid line is horizontal plane, and dotted line is vertical plane；Fair line is+45 ° of polarization, and dotted line is -45 °
Polarization.Known by figure, in 4.86~6.0GHz frequency bands, the horizontal/vertical face half-power ripple of ± 45 ° of polarizations is wide to be respectively：
HPBW=80~114 °/11.8~14.8 °, the wide uniformity of ripple of polarization is preferable.
Figure 30 represents the gain G vs. of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
F variation characteristics.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is gain, and unit is dBi；
Fair line represents+45 ° of polarization, and dotted line represents -45 ° of polarization.Known by figure, polarised in 4.80-6.0GHz frequency ranges (BW=
1.2GHz, 22.2%) frequency range, gain is respectively 13.65~15.80dBi, 13.85~16.35dBi, and the gain of polarization is consistent
Property is fine.
Figure 31 represents the front and rear ratio of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
FTBR vs.
F variation characteristics.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is FTBR, and unit is dB；Light
Slip represents+45 ° of polarization, and dotted line represents -45 ° of polarization.Known by figure, polarise 4.80-6.0GHz frequency ranges (BW=1.2GHz,
22.2%) frequency range, FTBR is respectively 17.5~22.0dBi, 18.5~23.0dBi, and the front and rear comparison of polarization is high.
Figure 32 is represented by the normalization of the five unit ± 45 ° dual polarization PCB cross oscillator arrays with compound boundary scheme one
Valve level SLL vs.
F variation characteristics.Wherein, transverse axis (X-axis) is frequency f, and unit is GHz；The longitudinal axis (Y-axis) is normalization SLL, and unit is
dB；Fair line represents+45 ° of polarization, and dotted line represents -45 ° of polarization.Known by figure, polarised in 4.80-6.0GHz frequency ranges (BW=
1.2GHz, 22.2%) frequency range, normalization SLL is respectively -11.25~16.50dB, 10.5~17.5dB, the SLL of polarization compared with
It is good.
The preferred embodiment of the present invention is these are only, the present invention is not limited to or limits.For grinding for this area
Study carefully or technical staff for, the present invention can have various modifications and variations.Within the spirit and principles of the invention, made
Any modification, equivalent substitution and improvements etc., should be included within the protection domain that the present invention is stated.
Claims (10)
1. a kind of broad beam high-gain aerial, it is characterised in that it includes being arranged on the friendship of multiple groups of battle array arrangements on reflecting plate
Oscillator pair is pitched, the cross oscillator is to the sagging broadband oscillator including being printed on two medium substrates, two sagging broadband oscillators
Arranged in a crossed manner, the two-arm of the sagging broadband oscillator is symmetrical arranged, and the oscillator arms are inverted L-shaped piece, including vertical section connects vertical section
The horizontal segment of upper end, horizontal segment end is down into bending segment, and oscillator arms upside sets parasitic element, and the medium substrate another side is set
There is microstrip line, reflecting plate front or the back side have two-way printing feeding network to be fed.
2. broad beam high-gain aerial as claimed in claim 1, it is characterised in that the vertical section of the oscillator arms is turned with horizontal segment
Part inwardly cuts out a platform in sharping on the outside of at angle, vertical section.
3. broad beam high-gain aerial as claimed in claim 1, it is characterised in that open the bottom of a wherein arm for the oscillator arms
It is jagged.
4. broad beam high-gain aerial as claimed in claim 1, it is characterised in that the parasitic element is in sagging broadband oscillator
Portion is symmetrical set along oscillator two-arm trend.
5. broad beam high-gain aerial as claimed in claim 4, it is characterised in that the parasitic element is to be connected to shake from platform
The elongate strip of sub- end bending segment endpiece, has gap between oscillator arms edge；Or, the parasitic element is fine rule frame, its
Disconnected at lower middle position, connect another horizontal minor matters close to oscillator arms lateral ends in opening, horizontal minor matters end is down
Bending, then connecting platform substantially parallel with oscillator incisal angle edge.
6. broad beam high-gain aerial as claimed in claim 5, it is characterised in that the matrix substrate from the oscillator arms of bottom two it
Between open up upward fluting, extend near platform；Or, the matrix substrate opens up downward fluting between the oscillator arms of top two,
Extend to vertical section adjacent upper part.
7. broad beam high-gain aerial as claimed in claim 1, it is characterised in that the microstrip line is with the sagging oscillator vertical section
For ground level, set in medium substrate another side along its centerline direction, its line width is less than ground level width, and original position
A little higher than the latter, when microstrip line is extended upwardly at oscillator vertical section upper brace from an oscillator arms bottom, first towards oscillator arms water
Flat section is reversely horizontal-extending, and the vertical leg extended downwardly all the way is separated during to close to the arm platform；And horizontal-extending section then after
Renew and extend at another arm platform of oscillator, then directly bend down and extend a segment length.
8. broad beam high-gain aerial as claimed in claim 1, it is characterised in that this two sagging broadbands arranged in a crossed manner shake
Son, with ± 45o or H/V crossed-symmetricals, horizontal-extending section of two microstrip lines of infall are arranged above and below, and at two medium substrate centers
Line opens complementary groove, and two groove total depths are equal to the height of medium substrate.
9. broad beam high-gain aerial as claimed in claim 1, it is characterised in that the reflecting plate both sides of the edge set metal edges
Boundary, one group of complex being at least made up of the sheet metal of two kinds of configurations is symmetrical arranged in the reflecting plate left and right sides, and by the cycle
Mode is arranged in reflecting plate both sides of the edge.
10. broad beam high-gain aerial as claimed in claim 1, it is characterised in that be externally provided with antenna house in layered transducer elements.With
Protect antenna radiator and miscellaneous part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710392359.1A CN107196047B (en) | 2017-05-27 | 2017-05-27 | Wide-beam high-gain antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710392359.1A CN107196047B (en) | 2017-05-27 | 2017-05-27 | Wide-beam high-gain antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107196047A true CN107196047A (en) | 2017-09-22 |
| CN107196047B CN107196047B (en) | 2023-08-08 |
Family
ID=59875140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710392359.1A Active CN107196047B (en) | 2017-05-27 | 2017-05-27 | Wide-beam high-gain antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107196047B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167163A (en) * | 2018-09-03 | 2019-01-08 | 广东通宇通讯股份有限公司 | Ultra wideband dual polarization element antenna |
| CN109659673A (en) * | 2018-12-14 | 2019-04-19 | 广东通宇通讯股份有限公司 | Broad beam high-gain directional bipolarization antenna |
| CN110034372A (en) * | 2019-05-13 | 2019-07-19 | 中国科学院国家天文台 | A kind of wideband dual polarized butterfly oscillator of plane bending cross type |
| CN110061341A (en) * | 2018-01-19 | 2019-07-26 | 中国联合网络通信集团有限公司 | A kind of railway covering method, broad beam high-gain aerial and multiband common antenna |
| CN112615145A (en) * | 2020-12-14 | 2021-04-06 | 西安电子科技大学 | Hemispherical wave beam ultra-wideband circularly polarized antenna |
| CN113690612A (en) * | 2021-07-09 | 2021-11-23 | 华南理工大学 | Full-polarization rectifying antenna with wide bandwidth power range and energy transmission system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2363519A1 (en) * | 2001-11-21 | 2003-05-21 | Superpass Company Inc. | Horizontal polarized slot antennas with omni-directional and sectoral radiation pattern |
| CA2570647A1 (en) * | 2005-12-16 | 2007-06-16 | Harris Corporation | Single polarization slot antenna array with inter-element coupling and associated methods |
| CN102437416A (en) * | 2011-08-25 | 2012-05-02 | 电子科技大学 | Broadband low cross-polarization printed dipole antenna with parasitic element |
| CN103904438A (en) * | 2014-03-24 | 2014-07-02 | 华南理工大学 | Broadband dual polarization base station antenna |
| CN207602775U (en) * | 2017-05-27 | 2018-07-10 | 广东通宇通讯股份有限公司 | Broad beam high-gain aerial |
-
2017
- 2017-05-27 CN CN201710392359.1A patent/CN107196047B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2363519A1 (en) * | 2001-11-21 | 2003-05-21 | Superpass Company Inc. | Horizontal polarized slot antennas with omni-directional and sectoral radiation pattern |
| CA2570647A1 (en) * | 2005-12-16 | 2007-06-16 | Harris Corporation | Single polarization slot antenna array with inter-element coupling and associated methods |
| CN102437416A (en) * | 2011-08-25 | 2012-05-02 | 电子科技大学 | Broadband low cross-polarization printed dipole antenna with parasitic element |
| CN103904438A (en) * | 2014-03-24 | 2014-07-02 | 华南理工大学 | Broadband dual polarization base station antenna |
| CN207602775U (en) * | 2017-05-27 | 2018-07-10 | 广东通宇通讯股份有限公司 | Broad beam high-gain aerial |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110061341A (en) * | 2018-01-19 | 2019-07-26 | 中国联合网络通信集团有限公司 | A kind of railway covering method, broad beam high-gain aerial and multiband common antenna |
| CN109167163A (en) * | 2018-09-03 | 2019-01-08 | 广东通宇通讯股份有限公司 | Ultra wideband dual polarization element antenna |
| CN109167163B (en) * | 2018-09-03 | 2024-01-05 | 广东通宇通讯股份有限公司 | Ultra-wideband dual-polarized oscillator antenna |
| CN109659673A (en) * | 2018-12-14 | 2019-04-19 | 广东通宇通讯股份有限公司 | Broad beam high-gain directional bipolarization antenna |
| CN109659673B (en) * | 2018-12-14 | 2024-01-05 | 广东通宇通讯股份有限公司 | Wide-beam high-gain dual-polarized directional antenna |
| CN110034372A (en) * | 2019-05-13 | 2019-07-19 | 中国科学院国家天文台 | A kind of wideband dual polarized butterfly oscillator of plane bending cross type |
| CN112615145A (en) * | 2020-12-14 | 2021-04-06 | 西安电子科技大学 | Hemispherical wave beam ultra-wideband circularly polarized antenna |
| CN112615145B (en) * | 2020-12-14 | 2021-10-22 | 西安电子科技大学 | Hemispherical wave beam ultra-wideband circularly polarized antenna |
| CN113690612A (en) * | 2021-07-09 | 2021-11-23 | 华南理工大学 | Full-polarization rectifying antenna with wide bandwidth power range and energy transmission system |
| CN113690612B (en) * | 2021-07-09 | 2022-12-16 | 华南理工大学 | Full-polarization rectifying antenna with wide bandwidth power range and energy transmission system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107196047B (en) | 2023-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107196047A (en) | Broad beam high-gain aerial | |
| US7864117B2 (en) | Wideband or multiband various polarized antenna | |
| CN108232458B (en) | Differential dual-frequency dual-polarized dual-loop base station antenna | |
| US8854270B2 (en) | Hybrid multi-antenna system and wireless communication apparatus using the same | |
| Gupta et al. | 5G multi-element/port antenna design for wireless applications: a review | |
| EP2908380B1 (en) | Wideband dual-polarized patch antenna array and methods useful in conjunction therewith | |
| Alhalabi et al. | Self-shielded high-efficiency Yagi-Uda antennas for 60 GHz communications | |
| CN106450702A (en) | Broadband dual-linear polarization cone chopping groove antenna | |
| Haraz et al. | Single-band PIFA MIMO antenna system design for future 5G wireless communication applications | |
| CN101316008A (en) | MIMO mobile terminal multi-antenna with high isolation and low correlated characteristic | |
| CN209232965U (en) | Carry on the back the Dual-polarized electricity magnetic dipole array antenna of chamber excitation | |
| CN101465475A (en) | Dual polarization radiating element and plane vibrator thereof | |
| CN109361073A (en) | Carry on the back the Dual-polarized electricity magnetic dipole array antenna of chamber excitation | |
| CN207559068U (en) | Low gain low sidelobe micro-base station antenna | |
| CN107331965B (en) | Low gain low sidelobe micro base station antenna | |
| CN107240769A (en) | Low section double frequency ultra-wideband antenna | |
| EP2937933B1 (en) | Low-profile wideband antenna element and antenna | |
| CN103367893A (en) | High-isolation broadband two-antenna system | |
| US11239544B2 (en) | Base station antenna and multiband base station antenna | |
| CN206432386U (en) | A kind of ultra-wideband dual-band and dual-polarization plate antenna | |
| CN207602775U (en) | Broad beam high-gain aerial | |
| CN110444875A (en) | A kind of parallel inverted coplanar waveguide ultra wide band mimo antenna | |
| CN113078469A (en) | Ku waveband double-frequency dual-polarized antenna for satellite communication | |
| CN103814476B (en) | Compact all channel antenna | |
| CN105742792B (en) | A kind of circular polarized antenna of horizontal omnidirectional radiation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |