CN107195566B - A kind of ion implantation energy monitoring method - Google Patents
A kind of ion implantation energy monitoring method Download PDFInfo
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- CN107195566B CN107195566B CN201710564681.8A CN201710564681A CN107195566B CN 107195566 B CN107195566 B CN 107195566B CN 201710564681 A CN201710564681 A CN 201710564681A CN 107195566 B CN107195566 B CN 107195566B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
The present invention provides a kind of ion implantation energy monitoring methods.The ion implantation energy monitoring method, comprising: in silicon substrate basis of formation oxide layer；The base oxide layer surface forms multiple polysilicons-insulating layer composite construction；Contact hole is formed in the multiple polysilicon-insulating layer composite construction, and makes metallic test block in the contact hole；Ion implanting processing is carried out to the multiple polysilicon-insulating layer composite construction；Resistance test is carried out to the multiple polysilicon-insulating layer composite construction using the metallic test block, whether the ion implantation energy to detect in the ion implantation process deviation occurs.Method provided by the invention by sequentially forming the polysilicon layer of multilayer mutually insulated in silicon substrate and can carry out ion implanting to it, and resistance test is carried out to detect ion implantation energy by metallic test block, realize simple and convenient efficiently monitoring ion Implantation Energy.
Description
[technical field]
The present invention relates to semiconductor chip manufacturing technology fields, particularly, are related to a kind of ion implantation energy monitoring method.
[background technique]
In the electronics industry, ion implanting is the very important doping techniques of one of semiconductor fabrication process, and
Control an important means of transistor threshold voltage.In modern semiconductor chip, especially large scale integrated chip
In manufacturing process, ion implantation technique can be described as a kind of essential means.
In semiconductor chip manufacturing process, the key parameter of ion implantation technology is exactly implantation dosage and Implantation Energy,
Implantation Energy determines the depth value of injection, and the depth of bigger Implantation Energy, injection is bigger.The monitoring hand of ion implanting at present
Section, can only monitor implantation dosage well, but for ion implantation energy, temporarily carry out without reliable and efficient method
Detection.
For example, a kind of traditional ion implanting detection method is: carrying out the ion note of doses and energy on silicon wafer
Enter, then carries out annealing active ions, then resistivity measurement is carried out to the injection zone on silicon wafer.If the dosage of ion implanting
It deviates, the resistivity for measuring silicon wafer has apparent reaction.If the energy of injection deviates, only result in silicon
The depth of piece intermediate ion injection changes.Resistivity will not occur significantly to change.Unless Implantation Energy has occurred greatly
Deviation, such as energy deviation are more than 50%, are likely to detect ion implantation energy exception by change in resistance, this will to from
The stability of son injection online process brings great hidden danger.
In view of this, it is necessary to provide a kind of ion implantation energy monitoring method, it is of the existing technology above-mentioned to solve
Problem.
[summary of the invention]
One of purpose of the invention is to provide a kind of ion implantation energy monitoring method in order to solve the above problem.
Ion implantation energy monitoring method provided by the invention, comprising: in silicon substrate basis of formation oxide layer；The basis
Oxidation layer surface forms multiple polysilicons-insulating layer composite construction；It is connect in the multiple polysilicon-insulating layer composite construction formation
Contact hole, and metallic test block is made in the contact hole；Ion implanting is carried out to the multiple polysilicon-insulating layer composite construction
Processing；Resistance test is carried out to the multiple polysilicon-insulating layer composite construction using the metallic test block, to detect in institute
State whether the ion implantation energy in ion implantation process deviation occurs.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
Each polysilicon-insulating layer composite construction respectively includes a polysilicon layer and the insulation for being formed in the polysilicon layer surface
Layer.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
Two neighboring polysilicon layer is realized mutually exhausted by in-between insulating layer in the multiple polysilicon-insulating layer composite construction
Edge.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
Forming multiple polysilicons-insulating layer composite construction in the base oxide layer surface includes: in Basis insulating barrier surface shape
At the first polysilicon layer；The first insulating layer is formed on first polysilicon layer surface, to obtain the first polysilicon-oxide layer
Composite construction；The making step for repeating above-mentioned first polysilicon-oxide layer composite construction, in the first polysilicon-oxide layer
Composite structure surface sequentially forms remaining multiple polysilicons-oxide layer composite construction.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The insulating layer is silicon dioxide layer.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The silicon dioxide layer is made especially by the surface of the polysilicon layer corresponding to it is directly carried out oxidation processes in boiler tube
It obtains.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The silicon dioxide layer is grown specifically by the mode of chemical vapor deposition on its corresponding polysilicon layer surface
Silicon dioxide layer.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The contact hole penetrates multiple polysilicons-insulating layer composite construction and reaches the basic oxide layer, but does not penetrate the basis
Oxide layer.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The metallic test block is filled into the contact hole and by the contact hole and the multiple polysilicon-insulating layer composite construction
In each polysilicon layer touching is conductively connected.
As a kind of improvement in ion implantation energy monitoring method provided by the invention, in an advantageous embodiment,
The thickness of each polysilicon layer or insulating layer is identical in the multiple polysilicon-insulating layer composite construction.
Ion implantation energy monitoring method provided by the invention is by sequentially forming the more of multilayer mutually insulated in silicon substrate
Crystal silicon layer simultaneously carries out ion implanting to it, and ion implantation energy is detected by resistance test, and realization is simple and convenient efficiently
Monitoring ion Implantation Energy.
[Detailed description of the invention]
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure, in which:
Fig. 1 is a kind of flow diagram of embodiment of ion implantation energy monitoring method provided by the invention；
Fig. 2 is the diagrammatic cross-section in method shown in FIG. 1 in silicon substrate basis of formation oxide layer；
Fig. 3 is the multiple polysilicons of base oxide layer surface-insulating layer composite construction diagrammatic cross-section shown in Fig. 2；
Fig. 4 is the diagrammatic cross-section that multiple polysilicons shown in Fig. 3-insulating layer composite construction forms contact hole；
Fig. 5 is the section contact schematic diagram that contact hole shown in Fig. 4 forms metallic test block；
Fig. 6 is the schematic diagram that ion implanting is carried out after metallic test block shown in Fig. 5 is formed；
Fig. 7 is the scatter chart of ion implanting depth and ion concentration.
[specific embodiment]
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's all other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
To solve the problems, such as that the prior art in semiconductor chip manufacturing process intermediate ion Implantation Energy is difficult to monitor, this hair
It is bright that a kind of ion implantation energy monitoring method is provided, mainly by sequentially forming the polysilicon of multilayer mutually insulated in silicon substrate
Layer simultaneously carries out ion implanting to it, and ion implantation energy is detected by resistance test, and realization is simple and convenient efficiently to be monitored
Ion implantation energy.
Referring to Fig. 1, it is a kind of flow diagram of embodiment of ion implantation energy monitoring method provided by the invention.
The ion implantation energy monitoring method the following steps are included:
Step S1, in silicon substrate basis of formation oxide layer；
Referring to Fig. 2, in step sl, providing a silicon substrate first, and by oxide layer growth technique in the silicon
The surface of substrate grows basic oxide layer, and the basic oxide layer can be specially silicon dioxide layer, can be 800 DEG C~
It is grown under 1300 DEG C of growth conditions in the surface of silicon, and embodiment as one preferred, the basis oxygen
The thickness for changing layer can be 0.5 μm~3.00 μm.
Step S2 forms multiple polysilicons-insulating layer composite construction in the base oxide layer surface, wherein two neighboring
Polysilicon layer passes through in-between insulating layer mutually insulated；
Specifically, referring to Fig. 3, each polysilicon-insulating layer composite construction respectively includes a polysilicon layer and formation
Oxide layer on the polysilicon layer surface, therefore, in step s 2, in the multiple polysilicon-insulating layer composite junction configuration
At later, the base oxide layer surface just has the spaced polysilicon layer of multiple mutually insulateds, and two neighboring polycrystalline
Silicon layer realizes mutually insulated by in-between insulating layer.
In one embodiment, the multiple polysilicon-insulating layer composite construction can be made especially by following methods
It forms.
Firstly, forming the first polysilicon layer on the Basis insulating barrier surface, first polysilicon layer is undoped
Polysilicon layer can be and directly grow under 400 DEG C~1000 DEG C of growth conditions in the base oxide layer surface.In
In specific embodiment, the thickness of first polysilicon layer can be determined according to the size of ion implantation energy；Ion implanting
Energy is lower, then the thickness of first polysilicon layer can be designed thinner.Embodiment as one preferred, described first
The thickness of polysilicon layer can be 0.005 μm~1.000 μm.
After first polysilicon layer formation, first further can be formed absolutely on first polysilicon layer surface
Edge layer, to obtain the first polysilicon-oxide layer composite construction.Wherein, first insulating layer can be specially oxide layer, than
Such as silicon dioxide layer, can be formed by following two mode: first, directly by first polysilicon layer in boiler tube
Surface carry out oxidation processes and forming silicon dioxide layer as first insulating layer；Second, using chemical vapor deposition
Mode first polysilicon layer surface growth layer of silicon dioxide layer as first insulating layer.It is being embodied
In example, the thickness of first insulating layer can equally be determined according to the size of ion implantation energy；Ion implantation energy is got over
Low, then the thickness of first insulating layer can be designed thinner.Embodiment as one preferred, first insulating layer
Thickness equally can be 0.005 μm~1.000 μm.
Then, above-mentioned production polysilicon layer and insulating layer step are repeated, in first surface of insulating layer successively continuous shape
At the second polysilicon layer, second insulating layer, third polysilicon layer, third insulating layer, the 4th polysilicon layer and the 4th insulating layer, i.e.,
Sequentially form the second polysilicon-oxide layer composite construction, third polysilicon-oxide layer composite construction and four polysilicons-oxidation
Layer composite construction.Although should be appreciated that embodiment shown in Fig. 3 with four polysilicons-oxide layer composite construction as an example,
In practical applications, the polysilicon-oxide layer composite construction quantity does not have special restriction, can be according to actual needs
Depending on, the polysilicon-oxide layer composite construction quantity is more, then ion implantation energy range that can be detected is bigger.
On the other hand, the first polysilicon-oxide layer composite construction, the second polysilicon-oxide layer composite construction,
Each polysilicon layer and insulating layer in third polysilicon-oxide layer composite construction and four polysilicons-oxide layer composite construction
Thickness can also be designed to identical according to actual needs, can also be designed to difference.
Step S3 forms contact hole in the multiple polysilicon-insulating layer composite construction；
Specifically, referring to Fig. 4, dry method can be passed through after the multiple polysilicon-insulating layer composite construction is formed
Etching mode is respectively formed the first contact hole and the second contact in the multiple polysilicon-insulating layer composite construction end positions
Hole, first contact hole and second contact hole penetrate the multiple polysilicon-insulating layer composite construction respectively and reach
The basic oxide layer.It should be noted that due to silicon substrate itself be it is electrically conductive, need to control in step s3
The etching depth of dry etching is cut through with guaranteeing that the basic oxide layer will not be eclipsed, come ensure each polysilicon layer with it is described
It is mutually isolated between silicon substrate, guarantee the detection accuracy of ion implantation energy monitoring method of the invention.
Step S4 forms metallic test block in the contact hole；
Referring to Fig. 5, in step s 4, firstly, in the multiple polysilicon-insulating layer composite junction by way of sputtering
The topsheet surface of structure forms metal layer, top layer of the metal layer in addition to covering the multiple polysilicon-insulating layer composite construction
Other than surface, while it being filled into first contact hole and second contact hole, to pass through first contact hole and institute
It states the second contact hole and touching is conductively connected in the multiple polysilicon layers of the multiple polysilicon-insulating layer composite construction.Specific
In embodiment, the material of the metal layer can be specially conventional sial copper or fine aluminium, and its thickness can be 0.01 μm
~5.00 μm.
Then, the metal layer is etched by preset metallic pattern by photoetching process, thus obtain respectively with it is described
First contact hole and the corresponding first metallic test block of the second contact hole and the second metallic test block.
Step S5 carries out ion implanting processing to the polysilicon-insulating layer composite construction；
Referring to Fig. 6, after metallic test block formation, from the polysilicon-insulating layer composite construction surface
Ion implanting processing is carried out to internal polysilicon layer.Wherein, the used implantation dosage of ion implanting or energy can be with realities
The ion implantation technology condition that border needs to monitor is consistent.It is dense to inject the multiple polysilicon-insulating layer composite construction ion
Degree is generally similar to Gaussian Profile with injection depth, as shown in Figure 7；Therefore, in the multiple polysilicon-insulating layer composite construction
The ion concentration of each polysilicon layer of portion is different.The ion concentration of the polysilicon layer injection is higher, then the polycrystalline
The resistance of silicon layer will be lower.
Assuming that the ion implantation energy of actual needs monitoring, injection depth peak value under normal circumstances are more in the third
Position where crystal silicon layer, then the resistance R3 of the third polysilicon layer should lower than second polysilicon layer resistance R2 and
The resistance R4 of 4th polysilicon layer, and the ion injected under normal circumstances fails to penetrate arrival first polysilicon layer,
Therefore the resistance R1 of first polysilicon layer should be very big, close to open circuit.
Step S6, the ion being injected into the multiple polysilicon-insulating layer composite construction by making annealing treatment activation；
In specific implementation, the multiple polysilicon-insulating layer composite construction is injected by above-mentioned ion implantation technology
Ion can be activated by modes such as thermal annealing or laser annealings, the right embodiment of the present invention does not swash specific annealing
Mode living is limited.
Step S7 carries out resistance test to the multiple polysilicon-insulating layer composite construction using the metallic test block,
Whether the ion implantation energy to detect in the ion implantation process there is deviation.
When due to ion implantation energy variation, it is injected into the multiple polysilicon-insulating layer composite construction ion penetration
Ability is different, therefore the variation of ion implantation energy will cause the resistivity of different polysilicons and change, and cause
The multiple polysilicon-insulating layer composite construction total resistance value changes.Therefore, by measuring the multiple polysilicon-
The total resistance value of insulating layer composite construction, can detect whether ion implantation energy deviation occurs, and calculate departure
Size.
Whether occur the principle of deviation come monitoring ion Implantation Energy by resistance test for more preferable step S7, below still with
The injection depth peak value of the ion implantation energy of monitoring under normal circumstances is actually needed where the third polysilicon layer
It is illustrated for position.Assuming that first polysilicon layer, second polysilicon layer, the third polysilicon layer and described
The resistance of 4th polysilicon layer is respectively R1, R2, R3 and R4, and is surveyed by the first metallic test block and second metal
It is R that test block, which carries out all-in resistance measured by resistance test to the multiple polysilicon-insulating layer composite construction, then R with R1,
R2, R3 and R4 meet following formula:
1/R=1/R4+1/R3+1/R2+1/R1
As noted previously, as because the ion injected under normal circumstances, which fails to penetrate, reaches first polysilicon layer, because
The resistance R1 of this first polysilicon layer is very big, and 1/R1 is close to 0, so all-in resistance R can simplify are as follows:
1/R=1/R4+1/R3+1/R2
Also, for resistance value R2, R3 and R4, there are following relationships: R3 is less than R2 and R4.When ion implantation energy occurs
When fluctuation, the depth of ion implanting will change, for example, when ion implantation energy becomes larger, it is likely that there are ions to wear
Thoroughly and it is injected into first polysilicon layer, the resistance value of first polysilicon layer will drastically reduce at this time, therefore pass through
The all-in resistance R that the first metallic test block and the second metallic test block measurement obtain is reformed into:
1/R=1/R4+1/R3+1/R2+1/R1
In these cases, the injection depth as where the variation of ion implantation energy leads to ion implantation concentration peak value
It changes, therefore resistance R2~R4 of second polysilicon layer, the third polysilicon layer and the 4th polysilicon layer
Also will change, therefore the total resistance value R obtained by resistance test measurement necessarily changes, whereby it can be detected that from
Whether sub- Implantation Energy there is the size of deviation and departure.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to protection model of the invention
It encloses.
Claims (10)
1. a kind of ion implantation energy monitoring method characterized by comprising
In the surface basis of formation oxide layer of silicon substrate；
The base oxide layer surface forms multiple polysilicons-insulating layer composite construction；
Contact hole is formed in the multiple polysilicon-insulating layer composite construction, and makes metallic test block in the contact hole；
Ion implanting processing is carried out to the multiple polysilicon-insulating layer composite construction；
Resistance test is carried out to the multiple polysilicon-insulating layer composite construction using the metallic test block, to detect in institute
State whether the ion implantation energy in ion implantation process deviation occurs.
2. the method according to claim 1, wherein each polysilicon-insulating layer composite construction respectively includes one
A polysilicon layer and the insulating layer for being formed in the polysilicon layer surface.
3. according to the method described in claim 2, it is characterized in that, adjacent in the multiple polysilicon-insulating layer composite construction
Two polysilicon layers realize mutually insulated by in-between insulating layer.
4. according to the method described in claim 2, it is characterized in that, forming multiple polysilicons-in the base oxide layer surface
Insulating layer composite construction includes:
The first polysilicon layer is formed in the base oxide layer surface；
The first insulating layer is formed on first polysilicon layer surface, to obtain the first polysilicon-oxide layer composite construction；
The making step for repeating above-mentioned first polysilicon-oxide layer composite construction, in the first polysilicon-oxide layer composite junction
Structure surface sequentially forms remaining multiple polysilicons-oxide layer composite construction.
5. according to the method described in claim 2, it is characterized in that, the insulating layer is silicon dioxide layer.
6. according to the method described in claim 5, it is characterized in that, the silicon dioxide layer directly will especially by boiler tube
The surface of polysilicon layer corresponding to it carries out oxidation processes to make to obtain.
7. according to the method described in claim 5, it is characterized in that, the silicon dioxide layer is specifically by chemical vapor deposition
Mode on its corresponding polysilicon layer surface come the silicon dioxide layer that grows.
8. the method according to claim 1, wherein to penetrate multiple polysilicon-insulating layers compound for the contact hole
Structure simultaneously reaches the basic oxide layer, but does not penetrate the basic oxide layer.
9. according to the method described in claim 8, it is characterized in that, the metallic test block is filled into the contact hole and passes through
Touching is conductively connected in each polysilicon layer in the contact hole and the multiple polysilicon-insulating layer composite construction.
10. method according to any one of claim 1 to 9, which is characterized in that the multiple polysilicon-insulating layer is multiple
It is identical for closing the thickness of each polysilicon layer or insulating layer in structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108109933B (en) * | 2017-12-18 | 2020-08-28 | 李友洪 | Monitoring method of ion implantation process |
| CN110006727A (en) * | 2019-04-10 | 2019-07-12 | 深圳市锐骏半导体股份有限公司 | A kind of monitoring method of ion implantation apparatus stability |
| CN110047773A (en) * | 2019-04-28 | 2019-07-23 | 德淮半导体有限公司 | The monitoring method and semiconductor structure of ion implantation energy |
| CN110504179B (en) * | 2019-06-28 | 2021-10-01 | 新昌县厚泽科技有限公司 | Ion detector and preparation method thereof |
| CN110504178B (en) * | 2019-06-28 | 2021-10-12 | 新昌县厚泽科技有限公司 | Ion detector and preparation method thereof |
| CN110444486B (en) * | 2019-06-28 | 2021-09-28 | 新昌县厚泽科技有限公司 | Ion monitor and preparation method thereof |
| CN110471099B (en) * | 2019-06-28 | 2023-03-10 | 上海芬创信息科技有限公司 | Ion sensor and preparation method thereof |
| CN117637701B (en) * | 2024-01-25 | 2024-05-03 | 粤芯半导体技术股份有限公司 | Semiconductor device and method for manufacturing the same |
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| KR100494439B1 (en) * | 2003-03-18 | 2005-06-10 | 삼성전자주식회사 | testing method of ion-implanting energy for ion-implanter |
| CN104091767B (en) * | 2014-06-25 | 2016-11-02 | 京东方科技集团股份有限公司 | The monitoring method of ion implanting |
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| CN105551992A (en) * | 2015-12-18 | 2016-05-04 | 上海华虹宏力半导体制造有限公司 | Test method for ion implantation machine base |
| CN106783687A (en) * | 2016-12-26 | 2017-05-31 | 株洲中车时代电气股份有限公司 | A kind of method for improving ion implanting monitoring |
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Effective date of registration: 20201223 Address after: No.28-6, Chengnan Road, Huaxi Industrial functional zone, Changxing County, Huzhou City, Zhejiang Province, 313000 Patentee after: ZHEJIANG CHANGXING SINO - RUSSIAN NEW ENERGY MATERIALS TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd. Address before: 117 Chuanzhi village, shaojiadu street, Linhai City, Taizhou City, Zhejiang Province Patentee before: Zhang Xueli |
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Granted publication date: 20191108 Termination date: 20210712 |