CN107193315B - A kind of multi-threshold low-voltage detection circuit - Google Patents
A kind of multi-threshold low-voltage detection circuit Download PDFInfo
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- CN107193315B CN107193315B CN201710623536.2A CN201710623536A CN107193315B CN 107193315 B CN107193315 B CN 107193315B CN 201710623536 A CN201710623536 A CN 201710623536A CN 107193315 B CN107193315 B CN 107193315B
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a kind of multi-threshold low-voltage detection circuits, are related to electronic circuit field, which includes：Signal input part, m control signal end, signal output end, division module, band-gap reference module, resistive control module, comparison module and trigger, the input terminal connection signal input terminal of division module, the output end of division module connects comparison module, the output end of band-gap reference module connects comparison module, and the output end of comparison module passes through trigger connection signal output end；The output end of the control terminal connection resistive control module of the first variable resistance in division module, each input terminal of resistive control module are separately connected a control signal end；The value of the control signal group of control signal end need to only be changed, so that it may different low voltage detections is easily selected, to meet requirement of the different integrated circuits to low voltage test function.
Description
Technical field
The present invention relates to electronic circuit field, especially a kind of multi-threshold low-voltage detection circuit.
Background technique
Integrated circuit refer to it is being process using modern semiconductors processing technology, be internally integrated the biggish crystal of quantity
The semiconductor devices such as pipe, resistance capacitance can complete specific function and apply in one of contemporary electronic systems micro-component.Often
One integrated circuit has required an external voltage power supply unit, and the device must be maintained in certain voltage range
(i.e. the supply voltage range that each integrated circuit has a steady operation) can work normally, if having exceeded integrated electricity
The normal working voltage range on road may cause work disorder.Common external voltage power supply unit include chemical dry cell,
Lithium battery etc., these batteries give an integrated circuit when need the regular hour, i.e., the supply voltage of integrated circuit from
The supply voltage normal value above freezing for being raised to the circuit needs a process.On the other hand, the above battery is using a period of time
Its voltage can be reduced slowly afterwards, therefore its supply voltage often changes integrated circuit in use, it is necessary to ensure that this
The range of kind variation is maintained in the supply voltage regulating scope of the circuit, otherwise circuit internal signal will be caused not know
Or the case where being disagreed with expected results, so that there is maloperation etc. in circuit.
In order to avoid there is abnormal working condition in circuit, it will usually using low-voltage detection circuit to supply voltage into
Row real-time monitoring, when supply voltage is lower than low voltage test virtual value LVDA, execute alarm, reset and start backup battery etc.
Operation.Conversely, when supply voltage start from scratch slowly rise (at this moment since supply voltage is very low, low voltage test structure
Certainly work), when being more than low voltage test release value LVDR, low voltage test is released, and circuit enters normal
Working condition.Therefore for some low voltage test structure, practical low voltage test value includes two values of LVDA, LVDR
To characterize its performance indicator.
Low-voltage detection circuit common at present is as shown in Figure 1, usually all can embody mains voltage variations using one kind
Partial-pressure structure, generate a branch pressure voltage signal, then the input comparator together with the reference voltage that reference voltage circuit generates
In be compared, necessary processing is carried out according to comparison result, such as postpones, shaping, then exports corresponding low voltage test
Signal, this low-voltage detection circuit are very high to reference voltage requirement, simultaneously because it only has unique low voltage test value,
Therefore detection limitation is also bigger, and in actual application, it is integrated for may selecting the chemical dry cell of different number
Circuit power supply, when the quantity difference of chemical dry cell, low voltage test value (including LVDA and LVDR) also should be different, show
Detection circuit disclosed in right Fig. 1 can not detect different low voltage test values, can not be suitable for different application scenarios.
Summary of the invention
The present inventor regarding to the issue above and technical need, proposes a kind of multi-threshold low-voltage detection circuit, the application
Multiple groups low voltage test threshold value can be set, to meet requirement of the different integrated circuits to low voltage test function.
Technical scheme is as follows：
A kind of multi-threshold low-voltage detection circuit, the circuit include：Signal input part, m control signal end, signal output
End, division module, band-gap reference module, resistive control module, comparison module and trigger, resistive control module include m defeated
Enter end and 2mA output end, m are positive integer；
The input terminal connection signal input terminal of division module, the first voltage of the output end connection comparison module of division module
Input terminal, the second voltage input terminal of the output end connection comparison module of band-gap reference module, the output end connection of comparison module
The input terminal of trigger, the output end connection signal output end of trigger；It include that first be sequentially connected in series can be changed in division module
Resistance, first resistor and second resistance, the input terminal of one end connection division module of the series circuit, other end ground connection, first
Resistance connects the output end of division module with the common end of second resistance, and the control terminal connection resistance of the first variable resistance controls mould
The output end of block, each input terminal of resistive control module are separately connected a control signal end；Signal input part is for connecting
Supply voltage to be detected, signal output end is for exporting low voltage detection, and m control signal end is for receiving at least two
A different control signal group, multi-threshold low-voltage detection circuit are defeated by signal when receiving different control signal groups
Outlet output low voltage detection corresponding with control signal group.
Its further technical solution is that the first variable resistance includes N number of divider resistance being sequentially connected in series, each partial pressure electricity
Hinder in parallel with a transmission gate respectively, the control terminal of each transmission gate is separately connected an output end of resistive control module, 1≤
N≤2mAnd N is integer.
Its further technical solution is, comparison module includes the first PMOS tube, the second PMOS tube, the first NMOS tube and the
Two NMOS tubes, the grid of the first NMOS tube are connected with the grid of the second NMOS tube and connect the drain electrode of the first NMOS tube, and first
The source electrode of NMOS tube and the source electrode of the second NMOS tube are grounded respectively, and the drain electrode of the first NMOS tube is also connected with the source of the first PMOS tube
Pole, the first voltage input terminal of the grid connection comparison module of the first PMOS tube, the drain electrode of the second NMOS tube connect the 2nd PMOS
The source electrode of pipe, the second voltage input terminal of the grid connection comparison module of the second PMOS tube, the second NMOS tube and the second PMOS tube
Common end connection comparison module output end；
The drain electrode of first PMOS tube passes through 3rd resistor and the 4th resistance connection signal input terminal, the drain electrode of the second PMOS tube
By the 5th resistance and the 6th resistance connection signal input terminal, 3rd resistor is identical with the resistance value of the 5th resistance, the 4th resistance with
The resistance value of 6th resistance is identical, and the 4th resistance is in parallel with a transmission gate, transmission gate also with the 6th resistor coupled in parallel, the control of transmission gate
The output end of connection resistive control module in end processed.
Its further technical solution is that circuit includes 2 control signal ends, and the first variable resistance includes 3 and successively goes here and there
The divider resistance of connection；Then resistance control circuit includes first input end, the second input terminal, the first output end, second output terminal,
Three output ends and the 4th output end, the first output end, second output terminal and third output end are respectively used to connection and each partial pressure
The control terminal of the transmission gate of resistor coupled in parallel, the 4th output end are used to connect and the transmission gate of the 4th resistance and the 6th resistor coupled in parallel
Control terminal；
First input end be separately connected first or door, second or door and the 4th with the input terminal of door, first input end is also logical
The input terminal of reverse side connection first or door, second or door and third and door is crossed, the second input terminal is separately connected first and door, the
Two with door, third and door and the 4th with the input terminal of door, first or door output end connection first and the input terminal of door, second or
Output end connection second and the input terminal of door of door, first connect the first output end with the output end of door, and second and door and third
It is separately connected the input terminal of third or door with the output end of door, the output end of third or door connects second output terminal, and the 4th and door
Output end connect third output end, first is separately connected the 4th or door with the output end of door with door, third or door and the 4th
Input terminal, the 4th or door output end connect the 4th output end.
Its further technical solution is, band-gap reference module include the second adjustable resistance, the 7th resistance, the 8th resistance,
9th resistance, the first triode, the second triode, the tenth resistance, capacitor and comparator；
7th resistance, the 8th resistance and the 9th resistance are sequentially connected in series, and one end of the series circuit connects the first triode
Emitter, the other end connect the emitter of the second triode, and the base stage connection collector of the first triode is simultaneously grounded, the two or three pole
The base stage connection collector of pipe is simultaneously grounded, and the 7th resistance connect the positive input of comparator with the common end of the first triode,
8th resistance connect the negative input of comparator with the common end of the 9th resistance, and the output end of comparator connects band-gap reference mould
The output end of block；The common end of 7th resistance and the 8th resistance connects the second adjustable resistance, and the other end of the second adjustable resistance connects
Connect the output end of comparator, the output end of comparator is also respectively connected with the tenth resistance and capacitor, the tenth resistance and capacitor it is another
End is grounded respectively.
Its further technical solution is that the second adjustable resistance uses fuse-wires structure, the second adjustable resistance of fuse-wires structure
Including M fuse resistor being sequentially connected in series, each fuse resistor is in parallel with a fuse respectively, the both ends point of each fuse resistor
Not Lian Jie a fuse pressure point, M is positive integer.
Its further technical solution is that each resistance in band-gap reference module uses temperature compensation structure, and temperature is mended
The resistance of compensation structure includes the thermo-compensator group that several are sequentially connected in series, and each thermo-compensator group includes being serially connected
Two compensation resistance and two compensation resistance temperature-coefficient of electrical resistances it is complementary.
Its further technical solution is that two compensation resistance in each thermo-compensator group are respectively to have negative electricity
Hinder the high resistant polycrystalline resistor of temperature coefficient and the well resistance with positive temperature coefficient.
The method have the benefit that：
1, multiple low voltage test threshold values can be set in multi-threshold low-voltage detection circuit disclosed in the present application, namely have more
Group low voltage test release value LVDR, low voltage test virtual value LVDA can use selection, i.e., need to only change the control of control signal end
The value of signal group processed, so that it may easily select different LVDR/LVDA values, low-voltage is examined to meet different integrated circuits
The requirement of brake.
2, reference voltage is provided using band-gap reference module, the reference voltage for comparing is highly stable, hardly follows electricity
Source voltage and temperature and change；In addition the resistance in band-gap reference module all uses temperature compensation structure, therefore further subtracts
Small influence of the temperature to reference voltage.
3, it when integrated circuit processing technique has deviation, can be adjusted using fuse-wires structure, enable reference voltage
The deviation for enough adapting to integrated circuit processing technique, improves the precision of low voltage test value.
4, the first variable resistance carries out selection control using passgate structures, and control method more succinctly facilitates；Second can
Power transformation resistance uses fuse-wires structure, and method of adjustment is more accurate, some Parameters variations caused by can accurately adjusting because of process deviation.
Detailed description of the invention
Fig. 1 is the circuit diagram of existing low-voltage detection circuit.
Fig. 2 is the circuit structure diagram of multi-threshold low-voltage detection circuit disclosed in the present application.
Fig. 3 is the circuit diagram of multi-threshold low-voltage detection circuit disclosed in the present application.
Fig. 4 is the circuit diagram of the first variable resistance of passgate structures in the application.
Fig. 5 is the circuit diagram of the resistive control module in the application.
Fig. 6 is the circuit diagram of the band-gap reference module in the application.
Fig. 7 is the circuit diagram of the second adjustable resistance of fuse-wires structure in the application.
Fig. 8 is the circuit diagram for the temperature compensation structure that the resistance in the band-gap reference module in the application uses.
Fig. 9 is the simulation waveform that the reference voltage of the band-gap reference module output in the application varies with temperature.
Figure 10 is the reference voltage of the band-gap reference module output in the application with the simulation waveform of supply voltage.
Figure 11 is the simulation result under the control that the application controls signal group at one.
Figure 12 is simulation result of the application under the control of another control signal group.
Specific embodiment
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to FIG. 2, it illustrates the circuit structure diagram of multi-threshold low-voltage detection circuit disclosed by the invention, the circuit
Including：Vin, m control signal ends of signal input part, signal output end Vout, division module, band-gap reference module, resistance control
Molding block, comparison module and trigger, trigger can be Schmidt trigger (Schmitt), and resistive control module includes m
Input terminal and 2mA output end, m are positive integer, and for the present invention by taking m=2 as an example, Fig. 2 includes two control signal end S with the circuit0
And S1For, and each output end of resistive control module is not shown respectively by Fig. 2.
Input terminal connection signal the input terminal Vin, signal input part Vin of division module are for connecting power supply electricity to be detected
Pressure, the first voltage input terminal of the output end connection comparison module of division module, supply voltage to be detected pass through division module
Partial pressure after from first voltage input terminal input comparison module, band-gap reference module output end connection comparison module second electricity
Press input terminal, band-gap reference module output reference voltage from second voltage input terminal input comparison module, comparison module it is defeated
Outlet connects the input terminal of trigger, the output end connection signal output end vo ut of trigger, and comparison module is used for the first electricity
The voltage of pressure input terminal and second voltage input terminal is compared, defeated using signal output end Vout is passed through after trigger shaping
Low voltage detection out.
It include variable resistance, the output end of the control terminal connection resistive control module of variable resistance, resistance in division module
Each input terminal of control module is separately connected a control signal end.M control signal end is different for receiving at least two
Control signal group, resistive control module be used to be changed according to the control signal group that receives control in division module can power transformation
The resistance value of resistance, when the resistance value of the variable resistance in division module changes, supply voltage to be detected passes through division module
Partial pressure after input comparison module voltage value it is different, therefore the low voltage detection of the circuit output is also different, Ye Jiduo
Threshold value low-voltage detection circuit is exported by signal output end when receiving different control signal groups and controls signal group pair
The low voltage detection answered realizes the selection to different low voltage detections.
It is related to specific circuit structure, the present invention can there are many embodiments, below with a typical embodiment
To illustrate particular circuit configurations and working principle of the invention.
As shown in figure 3, including the first variable resistance R being sequentially connected in series in division moduleV, first resistor R1And second resistance
R2, the series circuit one end connection division module input terminal namely connection signal input terminal Vin, the series circuit it is another
One end ground connection, first resistor R1With second resistance R2Common end connection division module output end, in this application, first electricity
Hinder R1Resistance value be 560K Ω, second resistance R2Resistance value be 520K Ω.First variable resistance RVIt is hindered using passgate structures
Value is adjusted, and structure is as shown in figure 4, the first variable resistance RVIncluding N number of divider resistance being sequentially connected in series, each divider resistance
In parallel with a transmission gate respectively, the control terminal of each transmission gate is separately connected an output end of resistive control module, 1≤N
≤2mAnd N is integer.The present invention is by taking N=3 as an example, the first variable resistance RVIncluding the divider resistance r being sequentially connected in series1、r2And r3, often
A divider resistance is in parallel with a transmission gate, the control terminal CP of three transmission gates1、CP2And CP3It is separately connected resistive control module
Output end, in this application, r1、r2And r3Resistance value be respectively 200K Ω, 240K Ω and 60K Ω.Each transmission gate includes
The drain electrode of PMOS tube, NMOS tube and phase inverter, PMOS tube and NMOS tube is connected and connects one end of resistance, PMOS tube and NMOS tube
Source electrode be connected and connect the other end of resistance, the input terminal of the grid connection phase inverter of PMOS tube and the control for connecting the transmission gate
End processed, the grid of the output end connection NMOS tube of phase inverter.First variable resistance RVIn each divider resistance whether work
It is determined by transmission gate connected in parallel, it can be seen from the figure that when the signal of the control terminal of transmission gate is 0, transmission gate conducting,
Divider resistance connected in parallel is short-circuited and does not work, otherwise when the signal of the control terminal of transmission gate is 1, transmission gate is not led
Logical, divider resistance connected in parallel works.With divider resistance r1For, as CP1=0, the divider resistance r of 200K Ω1It does not rise
Effect, as CP1=1, the divider resistance r of 200K Ω1It works in access circuit.
Comparison module includes the first PMOS tube P1, the second PMOS tube P2, the first NMOS tube N1 and the second NMOS tube N2, and first
The grid of NMOS tube N1 is connected with the grid of the second NMOS tube N2 and connect the drain electrode of the first NMOS tube N1, the first NMOS tube N1's
The source electrode of source electrode and the second NMOS tube N2 are grounded respectively, and the drain electrode of the first NMOS tube N1 is also connected with the source electrode of the first PMOS tube P1,
The grid connection the of the P1 of the first voltage input terminal namely the first PMOS tube of the grid connection comparison module of first PMOS tube P1
One resistance R1With second resistance R2Common end；The source electrode of the second PMOS tube P2 of drain electrode connection of first PMOS tube P2, the 2nd PMOS
The second voltage input terminal of grid connection comparison module namely the grid of the second PMOS tube P2 of pipe P2 connects band gap base modules
Output end；The common end of second NMOS tube N2 and the second PMOS tube P2 connect the output end of comparison module, namely connection triggering
The input terminal of device.
In order to assist adjusting the voltage value of input comparison module, as shown in figure 3, first in the comparison module in the present invention
The drain electrode of PMOS tube P1 passes through 3rd resistor R3With the 4th resistance R4The drain electrode of connection signal input terminal, the second PMOS tube P2 passes through
5th resistance R5With the 6th resistance R6Connection signal input terminal, 3rd resistor R3With the 5th resistance R5Resistance value it is identical, the 4th resistance
R4With the 6th resistance R6Resistance value it is identical, in this application, 3rd resistor R3, the 5th resistance R5, the 4th resistance R4With the 6th resistance
R6Resistance value be 50K Ω, the 4th resistance R4It is in parallel with a transmission gate, the transmission gate also simultaneously with the 6th resistance R6Parallel connection, should
The output end of the control terminal CP4 connection resistive control module of transmission gate.Similarly, the 4th resistance R4With the 6th resistance R6Whether act as
It is determined with by transmission gate connected in parallel, as CP4=0, transmission gate conducting, the 4th resistance R4With the 6th resistance R6It is short-circuited
And do not work, only have in this way from two branch road the first PMOS tube P1, the second PMOS tube P2 to signal input part Vin
One 50K resistance；Otherwise as CP4=1, transmission gate is not turned on, the 4th resistance R4With the 6th resistance R6It accesses circuit and acts as
With having 100K electric from two branch road the first PMOS tube P1, the second PMOS tube P2 to signal input part Vin in this way
Resistance.
In this embodiment, m=2, N=3, then resistance control circuit includes first input end S0With the second input terminal S1, the
One input terminal S0With the second input terminal S1Respectively with 2 control signal end S of the circuit0And S1It is connected, resistance control circuit also wraps
The first output end CP1, second output terminal CP2, third output end CP3 and the 4th output end CP4 are included, the first output end CP1 is used for
Connection and divider resistance r1The control terminal CP1 of transmission gate in parallel, second output terminal CP2 are for connecting and divider resistance r2It is in parallel
Transmission gate control terminal CP2, third output end CP3 for connect with divider resistance r3The control terminal CP3 of transmission gate in parallel,
4th output end CP is for connecting and the 4th resistance R4With the 6th resistance R6The control terminal CP4 of transmission gate in parallel.
The structure of resistance control circuit is as shown in figure 5, first input end S0It is separately connected first or door GO1, second or door GO2
With the 4th and door GA4Input terminal, first input end S0First or door G is also connected by reverse sideO1, second or door GO2And third
With door GA3Input terminal, the second input terminal S1It is separately connected first and door GA1, second with door GA2, third and door GA3With the 4th with
Door GA4Input terminal, first or door GO1Output end connection first with door GA1Input terminal, second or door GO2Output end connection
Second and door GA2Input terminal, first with door GA1Output end connection the first output end CP1, second with door GA2With third and door
GA3Output end be separately connected third or door GO3Input terminal, third or door GO3Output end connect second output terminal CP2, the
Four and door GA4Output end connect third output end CP3, first with door GA1, third or door GO3With the 4th and door GA4Output end
It is separately connected the 4th or door GO4Input terminal, the 4th or door GO4Output end connect the 4th output end CP4.
Referring to FIG. 6, band-gap reference module is integrated electricity it illustrates the circuit diagram of the band-gap reference module in the application
A common functional module of road, it can provide the voltage for hardly following the variation of temperature and supply voltage, and the usual voltage is about
For 1.25V, due to close with the band gap voltage value of silicon, so referred to as bandgap voltage reference (Bandgap Voltage
Reference), since difference also has difference, actual band gap base plus device size parameter to the parameter of each technique
Quasi- voltage value and 1.25V have some difference.In this application, the bandgap voltage reference of band-gap reference module output is to be input to
The reference voltage of comparison module, band-gap reference module include the second adjustable resistance RS, the 7th resistance R7, the 8th resistance R8, the 9th electricity
Hinder R9, the first triode Q0, the second triode Q1, the tenth resistance R10, capacitor C and comparator IO, in this application, the one or three pole
Pipe Q0For single triode, the second triode Q1It is formed in parallel by 8 triodes；7th resistance R7With the 8th resistance R8Resistance value
It is 247.5K Ω, the 9th resistance R9Resistance value be 26.5K Ω, the tenth resistance R10Resistance value be 240K Ω, the capacitance of capacitor C is
3pF。
Wherein, the 7th resistance R7, the 8th resistance R8With the 9th resistance R9It is sequentially connected in series, one end of series circuit connection the
One triode Q0Emitter, the other end connect the second triode Q1Emitter, the first triode Q0Base stage connect collector
And it is grounded, the second triode Q1Base stage connection collector and be grounded, the 7th resistance R7With the first triode Q0Common end connection
The positive input of comparator IO, the 8th resistance R8With the 9th resistance R9Common end connection comparator IO negative input, than
The output end of output end connection band gap base modules compared with device IO；7th resistance R7With the 8th resistance R8Common end connection second
Variable resistance RS, the second adjustable resistance RSOther end connection comparator IO output end, the output end of comparator IO also connects respectively
Meet the tenth resistance R10With capacitor C, the tenth resistance R10It is grounded respectively with the other end of capacitor C.
The second adjustable resistance RSUsing fuse-wires structure, the second adjustable resistance R of fuse-wires structureSM including being sequentially connected in series molten
Silk resistance, each fuse resistor is in parallel with a fuse respectively, and the both ends of each fuse resistor are separately connected a fuse pressure point,
M is positive integer.The second adjustable resistance RSStructure referring to FIG. 7, by taking M=4 as an example, the second adjustable resistance RSIncluding being sequentially connected in series
4 resistance r4、r5、r6And r7, the resistance value of this 4 resistance is respectively 4.5K Ω, 9K Ω, 18K Ω and 36K Ω, resistance r4With it is molten
Silk Fuse1 is in parallel, resistance r5It is in parallel with fuse Fuse2, resistance r6It is in parallel with fuse Fuse3, resistance r7It is in parallel with fuse Fuse4.
Resistance r4One end connect fuse pressure point FPAD1, resistance r4With resistance r5Common end connect fuse pressure point FPAD2, resistance r5With
Resistance r6Common end connect fuse pressure point FPAD3, resistance r6With resistance r7Common end connect fuse pressure point FPAD4, resistance r7
The other end connect fuse pressure point FPAD5.The second adjustable resistance RSBand-gap reference module is exported for correcting technological parameter
The influence of voltage, modified mode are the electrical parameters pair when according to chip testing using five fuse pressure points of FPAD1~FPAD5
It fuses to tetra- fuse selections of Fuse1~Fuse4, to being adjusted to the reference voltage of output near 1.25V.Molten
In silk design process, the adjustment stepping accuracy for the reference voltage that band-gap reference module exports is designed as 4mV, is measured by experiment
Obtaining bandgap voltage reference output accuracy is 0.32%.
In addition, the i.e. resistance value of resistance can be with temperature since the resistance in integrated circuit all has temperature characterisitic
Change and change, the changed size of resistance value can be characterized with the temperature coefficient of the resistance, the electricity being generally integrated in circuit
Resistance all has positive temperature coefficient, such as polycrystalline resistor, well resistance (nwell), active area resistance, as the temperature rises, this
The resistance value of the resistance of seed type can increase；Also having the resistance of particular type has negative temperature coefficient, such as high resistant polycrystalline resistor
(hpoly), the resistance value of such resistance can with temperature raising and reduce.In order to reduce temperature to resistance
It influences, further increases the stability of the voltage of band-gap reference module output, therefore each resistance in band-gap reference module is adopted
With temperature compensation structure, the resistance of temperature compensation structure includes the thermo-compensator group that several are sequentially connected in series, each temperature
Compensation resistance group includes that the temperature-coefficient of electrical resistance for the two compensation resistance and two compensation resistance being serially connected is complementary, in order to make temperature
The effect for spending compensation is more preferable, and at least two thermo-compensator groups would generally be used in the resistance of each temperature compensation structure, are asked
With reference to Fig. 8, by taking the resistance of temperature compensation structure includes 2 thermo-compensator groups as an example, optionally, each temperature-compensating electricity
Two compensation resistance in resistance group are respectively the high resistant polycrystalline resistor R with negative temperature coefficient of resistancehpolyWith with positive resistance temperature
Spend the well resistance R of coefficientnwellNamely the resistance of a temperature compensation structure includes the well resistance R being sequentially connected in seriesnwell, high resistant it is more
Brilliant resistance Rhpoly, well resistance RnwellWith high resistant polycrystalline resistor Rhpoly.In Fig. 7, the size (i.e. square number) of each compensation resistance
It can be designed to R/ (4*RWnwell) or R/ (4*RWhpoly), in layout design, the above resistance is also using shown in Fig. 7
Compensate the concatenated form of resistance.
Due to using band-gap reference module, the reference voltage for being accordingly used in comparing is highly stable, hardly follows power supply electricity
Pressure and temperature and change；Temperature compensation structure is all used additionally, due to resistance, therefore further reduces temperature to voltage
It influences.The reference voltage of band-gap reference module output in this programme is as shown in Fig. 9 with the simulation waveform of temperature, with power supply electricity
The simulation waveform of buckling is as shown in Fig. 10；It can be seen from the figure that 1.25V reference voltage is highly stable, and temperature drift exists
It is 50ppm/ DEG C or so, highly stable.
The working principle of multi-threshold low-voltage detection circuit disclosed in the present application is：
Control signal group is received by 2 control signal ends, as control signal group S0And S1Value difference when, in the application
4 transmission gates control terminal CP1~CP4 value it is different, then the on state of 4 transmission gates is different, therefore power supply electricity
Pressure partial pressure after be input to comparison module voltage value it is also different, comparison module to the voltage value after partial pressure compared with reference voltage after
The low voltage detection of generation is also different, i.e., supply voltage LVDR, low voltage test when corresponding low voltage test discharges
Supply voltage LVDA value when effectively is different, and the different corresponding control logics of control signal group and low voltage detection are such as
Shown in following table：
| Control signal group | CP4 | CP3 | CP2 | CP1 | LVDR value | LVDA value |
| S0=0, S1=0 | 0 | 0 | 0 | 0 | 2.474 | 2.218 |
| S0=0, S1=1 | 1 | 1 | 0 | 0 | 2.859 | 2.505 |
| S0=1, S1=0 | 1 | 1 | 1 | 0 | 3.289 | 2.935 |
| S0=1, S1=1 | 1 | 1 | 1 | 1 | 3.91 | 3.509 |
S0=0, S1The simulation result of low voltage detection is as shown in figure 11 in the case where=0, S0=1, S1=1 feelings
The simulation result of low voltage detection is as shown in figure 12 under condition, and comparison diagram 11 and Figure 12 are it can also be seen that disclosed in the present application
Multiple groups low voltage test threshold value can be set in multi-threshold low-voltage detection circuit, examines to meet different integrated circuits to low-voltage
The requirement of brake.
What has been described above is only a preferred embodiment of the present invention, and present invention is not limited to the above embodiments.It is appreciated that this
The other improvements and change that field technical staff directly exports or associates without departing from the spirit and concept in the present invention
Change, is considered as being included within protection scope of the present invention.
Claims (6)
1. a kind of multi-threshold low-voltage detection circuit, which is characterized in that the multi-threshold low-voltage detection circuit includes：Signal is defeated
Enter end, m control signal end, signal output end, division module, band-gap reference module, resistive control module, comparison module and touching
Device is sent out, the resistive control module includes m input terminal and 2mA output end, m are positive integer；
The input terminal of the division module connects the signal input part, the output end connection of the division module relatively mould
The output end of the first voltage input terminal of block, the band-gap reference module connects the second voltage input terminal of the comparison module,
The output end of the comparison module connects the input terminal of the trigger, and the output end of the trigger connects the signal output
End；It include that the first variable resistance, first resistor and the second resistance being sequentially connected in series are formed by series electrical in the division module
Road, one end of the series circuit connect the input terminal of the division module, other end ground connection, the first resistor and described the
The common end of two resistance connects the output end of the division module, and the control terminal of first variable resistance connects the resistance control
The output end of molding block, each input terminal of the resistive control module are separately connected a control signal end, and described first can
Power transformation resistance includes N number of divider resistance being sequentially connected in series, and each divider resistance is in parallel with a transmission gate respectively, each described
The control terminal of transmission gate is separately connected an output end of the resistive control module, 1≤N≤2mAnd N is integer；The signal
Input terminal is for connecting supply voltage to be detected, and the signal output end is for exporting low voltage detection, the m control
For signal end processed for receiving at least two different control signal groups, the multi-threshold low-voltage detection circuit is receiving difference
Control signal group when, pass through the signal output end and export corresponding with control signal group low voltage detection；
The comparison module includes the first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube, the first NMOS
The grid of pipe is connected with the grid of second NMOS tube and connect the drain electrode of first NMOS tube, first NMOS tube
Source electrode and the source electrode of second NMOS tube are grounded respectively, and the drain electrode of first NMOS tube is also connected with first PMOS tube
Source electrode, the grid of first PMOS tube connect the first voltage input terminal of the comparison module, the leakage of second NMOS tube
Pole connects the source electrode of second PMOS tube, and the grid of second PMOS tube connects the second voltage input of the comparison module
End, second NMOS tube connect the output end of the comparison module with the common end of second PMOS tube；
The drain electrode of first PMOS tube connects the signal input part, the 2nd PMOS with the 4th resistance by 3rd resistor
The drain electrode of pipe connects the signal input part by the 5th resistance and the 6th resistance, the 3rd resistor and the 5th resistance
Resistance value is identical, and the 4th resistance is identical as the resistance value of the 6th resistance, and the 4th resistance is in parallel with a transmission gate, institute
Transmission gate is stated also with the 6th resistor coupled in parallel, and the control terminal of the transmission gate connects the output end of the resistive control module.
2. multi-threshold low-voltage detection circuit according to claim 1, which is characterized in that the multi-threshold low voltage test
Circuit includes 2 control signal ends, and first variable resistance includes 3 divider resistances being sequentially connected in series；The then resistance control
Molding block includes first input end, the second input terminal, the first output end, second output terminal, third output end and the 4th output end,
It is in parallel with each divider resistance that first output end, the second output terminal and the third output end are respectively used to connection
The control terminal of transmission gate, the 4th output end is for connecting and the transmission gate of the 4th resistance and the 6th resistor coupled in parallel
Control terminal；
The first input end be separately connected first or door, second or door and the 4th with the input terminal of door, the first input end
Also by reverse side connect described first or door, described second or door and third and door input terminal, second input terminal point
Not Lian Jie first with door, second with the input terminal of door, the third and door and the described 4th and door, described first or door output
End connection described first and the input terminal of door, described second or the output end of door connect the input terminal of described second Yu door, it is described
First connect first output end with the output end of door, and described second is separately connected with the output end of door and the third and door
The output end of the input terminal of third or door, the third or door connects the second output terminal, the described 4th with the output end of door
Connect the third output end, described first is separately connected the with the output end of door with door, the third or door and the described 4th
Four or door input terminal, the described 4th or the output end of door connect the 4th output end.
3. multi-threshold low-voltage detection circuit according to claim 1 or 2, which is characterized in that the band-gap reference module
Including the second adjustable resistance, the 7th resistance, the 8th resistance, the 9th resistance, the first triode, the second triode, the tenth resistance, electricity
Appearance and comparator；
7th resistance, the 8th resistance and the 9th resistance are sequentially connected in series to form series circuit, the series circuit
One end connect emitter, the other end of first triode and connect the emitter of second triode, the described 1st
The base stage connection collector of pole pipe is simultaneously grounded, and the base stage connection collector of second triode is simultaneously grounded, the 7th resistance
The positive input of the comparator, the 8th resistance and the 9th resistance are connect with the common end of first triode
Common end connect the negative input of the comparator, the output end of the comparator connects the defeated of the band-gap reference module
Outlet；7th resistance connects the second adjustable resistance, the second adjustable resistance with the common end of the 8th resistance
The other end connect the output end of the comparator, the output end of the comparator is also respectively connected with the tenth resistance and described
The other end of capacitor, the tenth resistance and the capacitor is grounded respectively.
4. multi-threshold low-voltage detection circuit according to claim 3, which is characterized in that the second adjustable resistance uses
Fuse-wires structure, the second adjustable resistance of fuse-wires structure include M fuse resistor being sequentially connected in series, each fuse resistor
In parallel with a fuse respectively, the both ends of each fuse resistor are separately connected a fuse pressure point, and M is positive integer.
5. multi-threshold low-voltage detection circuit according to claim 3, which is characterized in that in the band-gap reference module
Each resistance uses temperature compensation structure, and the resistance of temperature compensation structure includes the thermo-compensator that several are sequentially connected in series
Group, each thermo-compensator group include the resistance temperature of two compensation resistance being serially connected and described two compensation resistance
It is complementary to spend coefficient.
6. multi-threshold low-voltage detection circuit according to claim 5, which is characterized in that each thermo-compensator
Two compensation resistance in group are respectively to have the high resistant polycrystalline resistor of negative temperature coefficient of resistance and with positive temperature coefficient
Well resistance.
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| CN112763094B (en) * | 2020-12-21 | 2022-11-15 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Automatic dual-mode switching temperature detection system and method |
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| US8067992B2 (en) * | 2008-06-06 | 2011-11-29 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Temperature compensation circuit and method |
| JP2012151186A (en) * | 2011-01-17 | 2012-08-09 | Seiko Instruments Inc | Resistance division circuit and voltage detection circuit |
| KR101442331B1 (en) * | 2012-06-18 | 2014-09-23 | 삼성전기주식회사 | Overvoltage protection circuit and method thereof |
| CN103677054B (en) * | 2012-09-11 | 2016-12-21 | 飞思卡尔半导体公司 | Band gap reference voltage generator |
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Effective date of registration: 20190415 Address after: Room 507, 508, 509, 510, 511, Block A, Office Building 06-4, Liyuan Development Zone, Wuxi City, Jiangsu Province Patentee after: Wuxi core Lin Hua Technology Co.,Ltd. Address before: 214153 Qianlotus Road No. 1, Wuxi City, Jiangsu Province Patentee before: Ju Shuirong |
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Denomination of invention: A Multi threshold Low Voltage Detection Circuit Granted publication date: 20181130 Pledgee: Bank of China Wuxi Binhu sub branch Pledgor: Wuxi core Lin Hua Technology Co.,Ltd. Registration number: Y2024980011480 |