CN107190241B - A kind of titanium diboride/tungsten coating and preparation method thereof with nanometer laminated structure - Google Patents

A kind of titanium diboride/tungsten coating and preparation method thereof with nanometer laminated structure Download PDF

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CN107190241B
CN107190241B CN201710317254.XA CN201710317254A CN107190241B CN 107190241 B CN107190241 B CN 107190241B CN 201710317254 A CN201710317254 A CN 201710317254A CN 107190241 B CN107190241 B CN 107190241B
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CN107190241A (en
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代伟
高翔
王启民
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Guangdong University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias

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  • Inorganic Chemistry (AREA)
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Abstract

The invention discloses a kind of titanium diboride/tungsten coating and preparation method thereof with nanometer laminated structure, the TiB2/ W coating is with TiB2Ceramic target and spraying W target are raw material, replace sputtering sedimentation on matrix by multi-target magnetic control sputtering and are formed by TiB2Titanium diboride/the tungsten coating for the nanometer laminated structure that ceramic layer and metal W layer are overlapped mutually.Metal W layer and TiB in its floating coat2The number of plies of ceramic layer is 10-100 layers, every layer of metal W layer with a thickness of 1-10nm, every layer of TiB2Layer with a thickness of 10-50nm.The TiB of nanometer laminated structure of the invention2/ W coating shows good toughness and very high hardness, this greatly expands the application range of this coating, while the present invention is used to prepare nanometer laminated structure TiB2The double target codeposition techniques of the magnetron sputtering of/W coating are easy to operate, and without techniques such as post-processings, short preparation period is at low cost, and reproducibility is good, it can be achieved that industrialized production.

Description

A kind of titanium diboride/tungsten coating and preparation method thereof with nanometer laminated structure
Technical field
The invention belongs to surface protection technique and related coating materials technical fields, in particular to a kind of to have nano lamellar Titanium diboride/tungsten coating of structure and preparation method thereof.
Background technique
With the development of society and the progress of industrial technology, industrial circle proposes higher and higher want to the performance of material It asks, there is excellent comprehensive performance in many engineer application application requirements materials；It is not required nothing more than with high hardness, corrosion-resistant Performance also requires it with low coefficient of friction, good high-temperature stability etc..To meet increasingly complicated and diversified engineering need It asks, coats one layer of hard coat on the surface of the material, come into being with improving the protective coating of comprehensive performance of material.Hard applies Layer can improve the surface property of material, reduce the friction and wear with workpiece, the effective material surface hardness, toughness, resistance to of improving Mill property and high-temperature stability, increase substantially the service life of coating product.Hard coat is improve material surface property one The economical and practical means of kind, are being machined at present, are especially occupying an important position in metal cutting.Its development adapts to High-tech requirement of the modern manufacturing industry to metal cutting tool, causes the great change of cutter material and performance, can be widely used In fields such as machine-building, auto industry, textile industry, geological drilling, mould industry, aerospaces.
Titanium diboride (TiB2) it is used as magnesium-yttrium-transition metal boride, there is high rigidity, high-melting-point, high wearability and corrosion resistant Corrosion, good conductivity and a series of excellent physicochemical properties such as thermal conductivity, chemical stability be excellent, be it is a kind of have it is excellent Structural behaviour and functional performance advanced ceramics material.However TiB2The residual stress of simple substance film is very high (more than 3.6GPa). If but want to further increase in actual application they hardness, wear-resisting property, with basal body binding force and taken into account low crisp Property, relatively low stress, Gao Houdu are impossible, because these simple substance reinforced films will go out with the increase of film thickness Now big columnar crystal structure, and brittleness and residual stress increase therewith, to cause its embrittlement and fall off, make surface peening Failure.
With the appearance of nano-scale coating, it has been found that when the thickness of coating is reduced to nanometer scale, its performance It can be very significantly improved.The researchers such as Berger have studied TiB2/ Ti multilayered structure finds soft metal Ti layers of structure energy TiB is greatly reduced2Ply stress improves binding force.They have found simultaneously, and the ratio between the yield strength of Ti and breaking strength are not enough Height cannot discharge TiB completely2Stress in layer.If constructing TiB using ratio higher W or Mo2/ W or TiB2/ Mo layered body System, can further improve coating performance.In addition, W and TiB2With similar crystal structure, superlattices interface knot may be will form Structure, but there is presently no the research of this respect reports.
In addition, the binding force of coating and matrix, coating interface toughness and resistance to crack extension energy can be improved in multi-layer structure design Power, while brittleness is reduced, flexibility and bearing capacity are improved, it is strong to be conducive to the thicker surface for being suitable for practical application of synthesis Change coat system.
Summary of the invention
In place of solving shortcoming and defect in the prior art, the primary purpose of the present invention is that providing a kind of high hard It is excellent that degree, low stress, high-flexibility, low-friction coefficient, film base junction close the overall characteristics such as strong, can apply to component of machine, knife The multilayer hard protective coating of the product surfaces such as mold.Use TiB2With the combination of W, by TiB2Layer and W layers of alternating deposit are in base The nanometer laminated structure with high rigidity and high friction resistance energy formed on body.
Another object of the present invention is to provide a kind of above-mentioned titanium diboride/tungsten coating systems with nanometer laminated structure Preparation Method.
A further object of the present invention is to provide above-mentioned titanium diboride/tungsten coating applications with nanometer laminated structure.
The object of the invention is achieved through the following technical solutions:
A kind of titanium diboride/tungsten coating with nanometer laminated structure, the TiB2/ W coating is with TiB2Ceramic target and spray Painting W target is raw material, replaces sputtering sedimentation on matrix by multi-target magnetic control sputtering and is formed by TiB2Ceramic layer and metal W layer are mutual Titanium diboride/tungsten coating of the nanometer laminated structure of superposition.
Preferably, the TiB2Ceramic target is flat target, and the atomic ratio of Ti and B are 1:2, purity 99.99%；W target To spray Style Columu Talget, purity 99.95%.
Preferably, described matrix is monocrystalline silicon, glass, high-speed steel or hard alloy.
Preferably, the titanium diboride/tungsten coating, it is characterised in that the TiB2Metal W layer and TiB in/W coating2Ceramics The number of plies of layer is 10~100 layers, every layer of metal W layer with a thickness of 1~10nm, every layer of TiB2Layer with a thickness of 10~50nm.
A kind of preparation method of above-mentioned titanium diboride/tungsten coating, it is characterised in that with TiB2Ceramic target and metal W target are original Material, is prepared, specific steps using magnetron sputtering technique are as follows:
(1) it cleans matrix: polished treated matrix being sent into supersonic wave cleaning machine, successively with acetone, dehydrated alcohol 10~20min of ultrasonic cleaning is carried out respectively with 15~30kHz, is then rinsed with deionized water, then general with purity >=99.5% Nitrogen drying；
(2) it vacuumizes and cleans plated film cavity with ion beam etching: the matrix after ultrasonic cleaning is placed in the workpiece of vacuum chamber On bracket, it is evacuated to 5.0 × 10- of vacuum degree3Pa is passed through 80~100sccm argon gas to ion source hereinafter, later on ion source, The power that ion source is arranged is 0.9kW, and the bias that work support is arranged is -300~-500V, etch cleaner process continues 20~ 30min；
(3) ion beam etching matrix: by matrix as in front of ion source, setting bias is -300~-500V, working time For 15~20min；
(4) it deposits titanium diboride/tungsten laminated coating: being passed through 80~100sccm of argon gas, control gas pressure in vacuum 0.56~ 0.7Pa opens and is arranged power parameter using the method for bipolar pulse magnetron sputtering, and sample baffle transposition is sputtered in two Before target, build-up of luminance starts sputtering sedimentation after carrying out pre-sputtering, wherein TiB2Ceramic target is A target, and W Style Columu Talget is B target, pre-sputtering 10 After~15min, sample baffle is removed, starts formal sputtering depositing Ti B2/ W laminated coating, sedimentation time 3h；
(5) deposition terminates to close power supply, is down to room temperature to vacuum room temperature, opens vacuum chamber and takes out matrix, in matrix table The coating that face is formed is the titanium diboride/tungsten coating with nanometer laminated structure；
Preferably, matrix described in step (1) is sample to be coated.
Preferably, matrix and support parameter described in step (4) are as follows: substrate bias -100-300V, bracket rotation 3rpm/ Min, revolve 2~5rpm/min, is arranged 300 DEG C of depositing temperature.
Preferably, power parameter described in step (4) are as follows: frequency 40kHz, 3~4kW of power, the A target pulse power duty Than being 25~75%.
Preferably, target described in step (4) is 6~10cm at a distance from matrix.
Above-mentioned titanium diboride/tungsten coating with nanometer laminated structure can be applied to metal machinery components, accurate mould The surfacecti proteon of tool, precision drive mechanical equipment, bearing, electronic product, decorative product and material.
The principle of the present invention: it is by bracket turning effort, when sample faces that the method for the present invention, which forms alternate multiple, TiB2When ceramic target, one layer of TiB of matrix deposition2Ceramic layer；When facing column W target, one layer of W metal layer is deposited；Rotation speed is fast Slowly every layer of TiB is determined2The thickness of ceramic layer and metal W layer.
Compared with prior art, the present invention has the following advantages and beneficial effects:
In traditional single layer TiB2Metal W is introduced in coating, by the control to substrate support rotation speed, forms TiB2 Ceramic layer and metal W layer periodicity alternating multilayered structure are reducing residual stress, while enhancing coating toughness, enhance coating Flexibility and adhesive force, improve coating wear Characteristics and thermal stability so that coating be more suitable for it is harsher Application environment, such as the protection of component of machine, knife mold product surface.
The present invention is by changing the TiB in coating2The single layer film thickness and coating cycle of ceramic layer and metal W layer are adjusted and are applied Microstructure, the microhardness performance of layer, to adapt to different processing object and machining condition.
TiB prepared by the present invention with nanometer laminated structure2/ W coating, easy to operate, simple process, manufacturing cycle It is short, it is at low cost, it is convenient for large-scale industrial production.
Detailed description of the invention
Fig. 1 is G- Design TiB of the present invention2The microstructure schematic diagram of/W nano-multilayered structures coating
Fig. 2 is G- Design TiB of the present invention2The friction microstructure figure of/W nano-multilayered structures coating
Specific embodiment
The contents of the present invention are further illustrated with specific embodiment with reference to the accompanying drawings of the specification, but should not be construed as to this The limitation of invention.Unless otherwise specified, the conventional hand that technological means used in embodiment is well known to those skilled in the art Section.Unless stated otherwise, the present invention uses reagent, method and apparatus is the art conventional reagents, method and apparatus.
Embodiment 1 follows these steps to realize the present invention:
(1) clean matrix: will polished treated WC-Co hard alloy matrix feeding supersonic wave cleaning machine, successively use Acetone, dehydrated alcohol carry out ultrasonic cleaning 10min with 30kHz respectively, are then cleaned with deionized water, then with purity >=99.5% Be dried with nitrogen.
(2) vacuumize and ion beam etching cleaning chamber and matrix: ion plating equipment installs TiB2 flat target and metal W column Shape target cleans coating chamber with high power dust catcher.Matrix after ultrasonic cleaning is placed on the work support of vacuum chamber, is evacuated to true 5.0 × 10- of reciprocal of duty cycle3Pa is passed through 80sccm argon gas to ion source, ion source power is arranged hereinafter, later on ion source Work support bias -300V is arranged in 0.9kW, this etching cleaning process continues 20min.
(3) ion beam etching matrix: rotation pivoted frame, by matrix as in front of ion source, being arranged bias -500V, when work Between be 20min.
(4) it is passed through argon gas 80sccm, controls gas pressure in vacuum 0.56Pa, using the method for bipolar pulse magnetron sputtering, TiB2Ceramic target is A target, and metal W target is B target, and target is 10cm at a distance from matrix, matrix and support parameter is arranged are as follows: matrix Bias -100V, bracket rotation 3rpm/min, revolve 2rpm/min, is arranged 300 DEG C of depositing temperature.It opens and power parameter is set Are as follows: frequency 40kHz, power 4kW, A target pulse power duty ratio be 75%.By sample baffle transposition before two sputtering targets, Build-up of luminance after carrying out pre-sputtering 10min, opens sample baffle, starts formal sputtering depositing Ti B2/ W nano laminated coating, when deposition Between be 3h.
(5) deposition terminates, and closes power supply, is down to room temperature to vacuum room temperature, fills atmosphere toward vacuum chamber, opens vacuum chamber and takes Sample out forms the TiB with nanometer laminated structure in WC-Co hard alloy matrix surface2/ W coating sample.
It is formed by coating, metal W layer and TiB2Ceramic layer is overlapped mutually into nanometer laminated structure, wherein TiB2/W The number of plies of metal W layer and TiB2 ceramic layer is 200 layers in coating, every layer of metal W layer with a thickness of 10nm, every layer of TiB2The thickness of layer Degree is 30nm.TiB with nanometer laminated structure of the invention2The structural schematic diagram of/W coating is as shown in Figure 1.
By residual stress, nano-indenter test, friction testing and high annealing test, prepared has nanometer Titanium diboride/tungsten coating residual stress of layer structure is 0.3GPa, hardness 30GPa, and coefficient of friction 0.2 applies simultaneously Layer shows excellent flexibility, and for elastic resilience up to 50%, thermal stability is 500 DEG C.
Embodiment 2 follows these steps to realize the present invention:
(1) it cleans matrix: the polished single crystal silicon substrate that treated (100) is orientated is sent into supersonic wave cleaning machine, according to It is secondary that ultrasonic cleaning 10min is carried out respectively with 30kHz with acetone, dehydrated alcohol, then rinsed with deionized water, then with purity >= 99.5% is dried with nitrogen.
(2) vacuumize and ion beam etching cleaning chamber and matrix: ion plating equipment installs TiB2 flat target and metal W column Shape target cleans coating chamber with high power dust catcher.Matrix after ultrasonic cleaning is placed on the work support of vacuum chamber, vacuum chamber It vacuumizes, until 5.0 × 10- of vacuum3Pa is passed through 80sccm argon gas to ion source, ion source is arranged hereinafter, later on ion source Work support bias 300V is arranged in power 0.9kW, this etching cleaning process continues 20min.
(3) ion beam etching matrix: rotation pivoted frame, by matrix as in front of ion source, being arranged bias -500V, when work Between be 20min.
(4) it is passed through argon gas 80sccm, controls gas pressure in vacuum 0.56Pa, using the method for bipolar pulse magnetron sputtering, TiB2Ceramic target is A target, and metal W target is B target, and target is 6cm at a distance from matrix, matrix and support parameter is arranged are as follows: matrix Bias -300V, bracket rotation 3rpm/min, revolve 5rpm/min, is arranged 300 DEG C of depositing temperature.It opens and power parameter is set Are as follows: frequency 40kHz, power 4kW, A target pulse power duty ratio be 30%.By sample baffle transposition before two sputtering targets, Build-up of luminance after carrying out pre-sputtering 15min, opens sample baffle, starts formal sputtering depositing Ti B2/ W nano laminated coating, when deposition Between 3h.
(5) deposition terminates, and closes power supply, is down to room temperature to vacuum room temperature, inflates toward vacuum chamber, opens vacuum chamber and takes out Sample forms the TiB with nanometer laminated structure on the single crystal silicon substrate surface of (100) orientation2/ W coating sample.
The above embodiment of the present invention only to clearly illustrate example of the present invention, and is not to reality of the invention Apply the restriction of mode.For those of ordinary skill in the art, it can also make on the basis of the above description other Various forms of variations.There is no necessity and possibility to exhaust all the enbodiments.It is all in the spirit and principles in the present invention Within made any modifications, equivalent replacements, and improvements etc., should all be included in the scope of protection of the claims of the present invention.

Claims (5)

1. a kind of titanium diboride/tungsten coating with nanometer laminated structure, which is characterized in that the TiB2/ W coating is with TiB2 Ceramic target and metal W target are raw material, replace sputtering sedimentation on matrix by multi-target magnetic control sputtering and form TiB2With W periodicity phase The nanometer laminated structure being mutually formed by stacking；
The TiB2Metal W layer and TiB in/W coating2The number of plies of ceramic layer is 10 ~ 100 layers, every layer of metal W layer with a thickness of 1 ~ 10nm, every layer of TiB2Layer with a thickness of 10 ~ 50nm.
2. titanium diboride/tungsten coating according to claim 1, it is characterised in that the TiB2The baseplate material of/W coating selects With crystal silicon, glass, high-speed steel or hard alloy.
3. a kind of preparation method of titanium diboride/tungsten coating according to claim 1 or 2, it is characterised in that with TiB2Ceramics Target and metal W target are raw material, are prepared using magnetron sputtering technique, specific steps are as follows:
(1) it cleans matrix: polished treated matrix being sent into supersonic wave cleaning machine, successively uses acetone, dehydrated alcohol with 15 ~30kHz carries out 10~20min of ultrasonic cleaning respectively, is then rinsed with deionized water, then is blown with the general nitrogen of purity >=99.5% It is dry；
(2) it vacuumizes and cleans plated film cavity with ion beam etching: the matrix after ultrasonic cleaning is placed in the work support of vacuum chamber On, it is evacuated to vacuum degree 5.0 × 10-3Pa is passed through 80 ~ 100sccm argon gas to ion source hereinafter, later on ion source, be arranged from The power of component is 0.9kW, and the bias that work support is arranged is -300 ~ -500V, and etch cleaner process continues 20 ~ 30min；
(3) ion beam etching matrix: by matrix as in front of ion source, setting bias is -300 ~ -500V, the working time for 15 ~ 20min；
(4) it deposits titanium diboride/tungsten laminated coating: being passed through 80 ~ 100sccm of argon gas, control 0.56 ~ 0.7 Pa of gas pressure in vacuum, Using the method for bipolar pulse magnetron sputtering, power parameter is opened and be arranged, by sample baffle transposition before two sputtering targets, is risen Brightness starts sputtering sedimentation after carrying out pre-sputtering, wherein TiB2Ceramic target is A target, and W Style Columu Talget is B target, 10 ~ 15min of pre-sputtering Afterwards, sample baffle is removed, formal sputtering depositing Ti B is started2/ W laminated coating, sedimentation time 3h；
(5) deposition terminates to close power supply, is down to room temperature to vacuum room temperature, opens vacuum chamber and takes out matrix, in matrix surface shape At coating be that there is titanium diboride/tungsten coating of nanometer laminated structure.
4. preparation method according to claim 3, it is characterised in that matrix described in the step (1) is sample to be coated Product；Matrix and support parameter described in step (4) are as follows: substrate bias -100 ~ -300V, bracket rotation 3rpm/min, revolution 2 ~ 5rpm/min is arranged 300 DEG C of depositing temperature；The power parameter are as follows: frequency 40kHz, 3 ~ 4kW of power, the A target pulse power account for Sky is than being 25 ~ 75%；The target is 6 ~ 10cm at a distance from matrix.
5. titanium diboride/tungsten coating with nanometer laminated structure is applied to metal machinery zero as claimed in claim 1 or 2 The surfacecti proteon of part, precision die, precision drive mechanical equipment, bearing, electronic product, decorative product and material.
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CN101171359A (en) * 2005-05-04 2008-04-30 Esk陶瓷有限及两合公司 Method for coating substrates with copper or silver
CN103398483A (en) * 2013-07-19 2013-11-20 中国科学院广州能源研究所 Solar intermediate-temperate high-temperature selective absorbing coating with absorbing layers composed of boron-containing compounds and preparation method of solar intermediate-temperate high-temperature selective absorbing coating
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