CN107172820A - The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode - Google Patents
The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode Download PDFInfo
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- CN107172820A CN107172820A CN201710480439.2A CN201710480439A CN107172820A CN 107172820 A CN107172820 A CN 107172820A CN 201710480439 A CN201710480439 A CN 201710480439A CN 107172820 A CN107172820 A CN 107172820A
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- copper
- ion implanting
- clad plates
- plating mode
- clad
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of method that use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, the powder and polytetrafluoroethylene (PTFE) powder of low-k is selected to be used as raw material, blank is processed as by forming and sintering, blank is lathed plate again and obtains base material, is finally the copper-clad plate that 2.2≤Dk ＜ 6.5 are made by the double-side copper-applying of base material using ion implanting, electric plating method.Present invention saves the making of copper foil, glass fabric, technique is simple, energy-conserving and environment-protective, and obtained 2.2≤Dk ＜ 6.5 copper-clad plate loss is low.
Description
Technical field
It is specifically that one kind is made using turning ion implanting plating mode the present invention relates to method for manufacturing cover clad laminate field
The method of the copper-clad plates of 2.2≤Dk ＜ 6.5.
Background technology
Copper-clad plate is baseplate material essential when pcb board makes, and it typically adheres to copper foil by base material single or double
Constitute.The making of prior art copper-clad plate, is, by middle low-k powder doping ptfe emulsion resin, to pass through powder
Base material is obtained into glue, in the drying of glass fabric cementing, by base material double-side copper-applying, the technique such as hot pressing makes with mixed with resin
Form.2.2≤Dk of production（Dielectric constant）There is the problem of being lost bigger than normal, and the glass used in ＜ 6.5 copper-clad plate
Fiber cloth, copper foil manufacture power consumption and not environmentally.
The content of the invention makes 2.2≤Dk ＜ 6.5 using ion implanting plating mode it is an object of the invention to provide one kind and covered
The method of copper coin, with solve the loss of prior art method for manufacturing cover clad laminate it is big, not environmentally the problem of.
In order to achieve the above object, the technical solution adopted in the present invention is：
The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using turning ion implanting plating mode, it is characterised in that：Including following
Step：
（1）, in selection low-k ceramic powder and polytetrafluoroethylene (PTFE) powder as raw material, and by ceramic powder and poly- four
PVF powder is well mixed；
（2）, by step（1）Well mixed powder is processed into blank by forming and sintering；
（3）, by step（2）Process obtained blank and be lathed plate, you can obtain the base of the copper-clad plates of 2.2≤Dk of making ＜ 6.5
Material；
（4）, using the method for first ion implanting re-plating by step（3）The double-sided copper-clad of obtained base material, that is, be made 2.2≤Dk
＜ 6.5 copper-clad plate.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（3）Middle blank is lathed after plate, and thickness of slab is in 0.5-9mm, and turning device therefor is peeler.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（1）In, the dielectric constant requirement of ceramic powder is 6 to 30, and ceramic powder is silica, aluminum oxide, titanium dioxide
The mixture of three, wherein quality of alumina account for the 30-40% of ceramic powder gross mass, that titanium dioxide quality accounts for ceramic powder is total
The 10-60% of quality, surplus are silica.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（1）In, the mass ratio of ceramic powder and polytetrafluoroethylene (PTFE) is 1:9 to 4:6.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（1）In, the particle diameter of polytetrafluoroethylene (PTFE) powder is capable of the particle diameter of burden ceramic powder.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（2）In, unit pressure requirement is 100kg/cm during shaping2, molding time be 50h.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（2）In, 380 DEG C of temperature, sintering time 50h during sintering.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：Step（4）In, copper atom is ionized into copper ion during ion implanting, by copper ion implantation to the double surfaces of polyfluortetraethylene plate
Layer；Polyfluortetraethylene plate is had to the copper-depositing on surface of copper ion during plating using electroplate liquid.
The method that described use turning ion implanting plating mode makes the copper-clad plates of 2.2≤Dk ＜ 6.5, its feature exists
In：The copper-clad plates of 2.2≤Dk ＜ 6.5 are made using turning ion implanting plating mode.
The present invention mixes middle low-k ceramic powder and polytetrafluoroethylene (PTFE) powder, is lathed after forming and sintering each
The plate of thickness is planted, thickness of slab can be achieved from 0.5-9mm, and this plate applies copper through first copper ion implantation re-plating method and 2.2≤Dk ＜ are made
6.5 copper-clad plate.Present invention process strengthens copper-clad plate rigidity without using glass fabric, and glass fabric gluing work is not used
Sequence, the high-temperature laminating technique of bonding sheet and copper foil is not used, therefore saves the making of copper foil, glass fabric, and technique is simple,
Energy-conserving and environment-protective.And because small, obtained 2.2≤Dk ＜ are lost in polytetrafluoroethylene (PTFE) powder and middle low-k ceramic powder
6.5 copper-clad plate dielectric loss is low.
Embodiment
The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using turning ion implanting plating mode, is comprised the following steps：
（1）, in selection low-k ceramic powder and polytetrafluoroethylene (PTFE) powder as raw material, and by ceramic powder and poly- four
PVF powder is well mixed；
（2）, by step（1）Well mixed powder is processed into blank by forming and sintering；
（3）, by step（2）Process obtained blank and be lathed plate, you can obtain the base of the copper-clad plates of 2.2≤Dk of making ＜ 6.5
Material；
（4）, using the method for first ion implanting re-plating by step（3）The double-sided copper-clad of obtained base material, that is, be made 2.2≤Dk
＜ 6.5 copper-clad plate.
Step（3）Middle blank is lathed after plate, and thickness of slab is in 0.5-9mm, and turning device therefor is peeler.
Step（1）In, the dielectric constant requirement of ceramic powder is 6 to 30, and ceramic powder is silica, aluminum oxide, two
The mixture of titanium oxide three, wherein quality of alumina account for the 30-40% of ceramic powder gross mass, titanium dioxide quality and account for ceramics
The 10-60% of powder gross mass, surplus are silica.
Step（1）In, the mass ratio of ceramic powder and polytetrafluoroethylene (PTFE) is 1:9 to 4:6.
Step（1）In, the particle diameter of polytetrafluoroethylene (PTFE) powder is capable of the particle diameter of burden ceramic powder.
Step（2）In, unit pressure requirement is 100kg/cm during shaping2, molding time be 50h.
Step（2）In, 380 DEG C of temperature, sintering time 50h during sintering.
Step（4）In, copper atom is ionized into copper ion during ion implanting, copper ion implantation is double to polyfluortetraethylene plate
Superficial layer；Polyfluortetraethylene plate is had to the copper-depositing on surface of copper ion during plating using electroplate liquid.
The copper-clad plates of 2.2≤Dk ＜ 6.5 are made using turning ion implanting plating mode.
Claims (9)
1. the method for the copper-clad plates of 2.2≤Dk ＜ 6.5 is made using turning ion implanting plating mode, it is characterised in that：Including with
Lower step：
（1）, in selection low-k ceramic powder and polytetrafluoroethylene (PTFE) powder as raw material, and by ceramic powder and poly- four
PVF powder is well mixed；
（2）, by step（1）Well mixed powder is processed into blank by forming and sintering；
（3）, by step（2）Process obtained blank and be lathed plate, you can obtain the base of the copper-clad plates of 2.2≤Dk of making ＜ 6.5
Material；
（4）, using the method for first ion implanting re-plating by step（3）The double-sided copper-clad of obtained base material, that is, be made 2.2≤Dk
＜ 6.5 copper-clad plate.
2. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（3）Middle blank is lathed after plate, and thickness of slab is in 0.5-9mm, and turning device therefor is peeler.
3. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（1）In, the dielectric constant requirement of ceramic powder is 6 to 30, and ceramic powder is silica, oxidation
Aluminium, the mixture of titanium dioxide three, wherein quality of alumina account for the 30-40% of ceramic powder gross mass, titanium dioxide quality and accounted for
The 10-60% of ceramic powder gross mass, surplus are silica.
4. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（1）In, the mass ratio of ceramic powder and polytetrafluoroethylene (PTFE) is 1:9 to 4:6.
5. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（1）In, the particle diameter of polytetrafluoroethylene (PTFE) powder is capable of the particle diameter of burden ceramic powder.
6. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（2）In, unit pressure requirement is 100kg/cm during shaping2, molding time be 50h.
7. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（2）In, 380 DEG C of temperature, sintering time 50h during sintering.
8. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：Step（4）In, copper atom is ionized into copper ion during ion implanting, by copper ion implantation to polytetrafluoroethyl-ne
The double superficial layers of alkene plate；Polyfluortetraethylene plate is had to the copper-depositing on surface of copper ion during plating using electroplate liquid.
9. use turning ion implanting plating mode according to claim 1 makes the side of the copper-clad plates of 2.2≤Dk ＜ 6.5
Method, it is characterised in that：The copper-clad plates of 2.2≤Dk ＜ 6.5 are made using turning ion implanting plating mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480439.2A CN107172820A (en) | 2017-06-22 | 2017-06-22 | The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480439.2A CN107172820A (en) | 2017-06-22 | 2017-06-22 | The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode |
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| CN107172820A true CN107172820A (en) | 2017-09-15 |
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| CN201710480439.2A Pending CN107172820A (en) | 2017-06-22 | 2017-06-22 | The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108501488A (en) * | 2018-05-18 | 2018-09-07 | 吴东建 | A kind of high-frequency high-speed copper-clad plate and preparation method thereof |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN116240601A (en) * | 2022-12-28 | 2023-06-09 | 深圳惠科新材料股份有限公司 | Composite copper foil, preparation method thereof and battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102260378A (en) * | 2011-05-06 | 2011-11-30 | 广东生益科技股份有限公司 | Composite material, high-frequency circuit board manufactured therefrom and manufacturing method of high-frequency circuit board |
| CN105873381A (en) * | 2015-11-06 | 2016-08-17 | 珠海市创元开耀电子材料有限公司 | HDI circuit board and manufacture method thereof |
-
2017
- 2017-06-22 CN CN201710480439.2A patent/CN107172820A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102260378A (en) * | 2011-05-06 | 2011-11-30 | 广东生益科技股份有限公司 | Composite material, high-frequency circuit board manufactured therefrom and manufacturing method of high-frequency circuit board |
| CN105873381A (en) * | 2015-11-06 | 2016-08-17 | 珠海市创元开耀电子材料有限公司 | HDI circuit board and manufacture method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108501488A (en) * | 2018-05-18 | 2018-09-07 | 吴东建 | A kind of high-frequency high-speed copper-clad plate and preparation method thereof |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN116240601A (en) * | 2022-12-28 | 2023-06-09 | 深圳惠科新材料股份有限公司 | Composite copper foil, preparation method thereof and battery |
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Application publication date: 20170915 |