CN107170853B - 一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法 - Google Patents

一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法 Download PDF

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CN107170853B
CN107170853B CN201710318230.6A CN201710318230A CN107170853B CN 107170853 B CN107170853 B CN 107170853B CN 201710318230 A CN201710318230 A CN 201710318230A CN 107170853 B CN107170853 B CN 107170853B
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沈悦
张宗坤
徐宇豪
沈意斌
黄健
顾峰
王林军
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Abstract

本发明公开了一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，其步骤为：(1)将商用CdZnTe多晶体研磨成粉末作为升华源；(2)镀有氮化镓(GaN)的单晶硅片作为衬底，再用氮气吹干，放入近空间升华反应室内；(3)将升华室内气压抽至5pa以下；开卤素灯将升华源和衬底加热到600℃、550℃；生长20min，冷却至室温，取出，即得到GaN/CdZnTe薄膜；(4)用蒸镀法向上述GaN/CdZnTe薄膜表面蒸镀金属电极，再将金属电极放在N2氛围下退火，使GaN/CdZnTe与金属电极之间形成更好的欧姆接触，即制得复合结构的GaN/CdZnTe薄膜紫外光探测器。该方法使用的GaN衬底可以保证复合结构的GaN/CdZnTe薄膜紫外光探测器在高温、强辐射环境下的使用，对紫外光也具有有良好的稳定性和光响应特性。

Description

一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法
技术领域
本发明涉及一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，属于无机非金属材料制造工艺技术领域。
背景技术
紫外光探测技术是继红外和激光探测技术之后的新的军民两用的光电探测技术。目前，高灵敏度的紫外光探测大多采用的是对紫外光敏感的真空光电倍增管及相似的真空类型器件。但是，与固体型的探测器件相比，真空类型器件存在体积大和工作电压高的缺点；例如硅光电探测器件对可见光有响应，该特点在紫外光探测中就会成为缺点。此时，要求只对紫外信号进行探测，就需要昂贵的前置滤光设施。随着宽禁带半导体材料研究的逐步深入，研制出多种结构的紫外光探测器，如光导型、p-n结型、肖特基结型、p-i-n 型、异质结型、MSM型等紫外光探测器。实际应用中需要量子效率高、面积大、分辨率高、动态范围宽、速度快、噪声低的紫外光探测器。光电导探测器是利用半导体的光电导效应而制作的光探测器，是在半导体薄膜上淀积两个欧姆接触电极而形成的光电导探测器。其主要优点是内部增益较高，结构简单；主要缺点是响应速度慢，器件的暗电流和漏电流大。
CdZnTe单晶材料属于II-VI族化合物半导体，是由 CdTe与ZnTe按一定比例组合而成的固熔体化合物。该材料的晶格常数从CdTe的晶格常数到ZnTe 的晶格常数连续变化，禁带宽度也会在1.45eV到2.28eV之间连续变化。作为一种宽禁带半导体，CdZnTe适用于紫外光探测，且CdZnTe材料本身电阻率高，用作紫外光探测时有着较小的暗电流和漏电流。但是，传统的Si、GaAs等材料作为衬底，由于禁带宽度过小，无法保证紫外光探测器在高温、强辐射条件下的正常使用。
发明内容
本发明的目的在于克服已有技术存在的不足，提供一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，该方法制备的GaN/CdZnTe薄膜紫外光探测器对紫外光具有良好的稳定性和响应特性。
为达到上述目的，本发明采用如下技术方案：
一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，该方法包括如下步骤：
(1). CdZnTe多晶升华源的准备：将CdZnTe多晶体研磨成粉末作为升华源；
(2). 衬底预处理：采用镀有氮化镓(GaN)的单晶硅片作为衬底，将衬底分别用丙酮、酒精、去离子水分别清洗15分钟，洗去衬底表面的杂质和有机物，再用氮气吹干后放入近空间升华反应室内；
(3). CdZnTe薄膜的生长过程：开机械泵抽真空，将升华室内气压抽至5pa以下；开卤素灯将升华源和衬底分别加热到600℃、550℃；生长20min后，关闭卤素灯，待样品冷却至室温后，关闭机械泵，取出样品，即得到GaN/CdZnTe薄膜；
(4). GaN/CdZnTe薄膜紫外光探测器制作：采用蒸镀法向上述GaN/CdZnTe薄膜表面蒸镀厚为100nm的金电极，然后将金电极放在N2气体氛围下于450℃退火30min ，使GaN/CdZnTe薄膜与金电极之间形成更好的欧姆接触，最后制得复合结构的GaN/CdZnTe薄膜紫外光探测器。
所述的CdZnTe多晶体为峨眉半导体材料厂生产的商用CdZnTe多晶体基片。
本发明与现有技术相比较，具有的优点在于：
该方法由于采用氮化镓(GaN)，其具有直接带隙，禁带宽度达到3.43eV，且热导高、化学惰性高、热稳定性好；该氮化镓(GaN)抗辐射能力强,便于制作欧姆接触、异质结构，用作生长CdZnTe的衬底，有利于快速生长大面积、高质量的CdZnTe薄膜；该方法使用的GaN衬底可以保证复合结构的GaN/CdZnTe薄膜紫外光探测器在高温、强辐射环境下的使用，对紫外光也具有有良好的稳定性和光响应。
附图说明
图1是本发明实施例制备的一种复合结构的GaN/CdZnTe薄膜紫外光探测器的表面扫描电镜(SEM)图；
图2为图1的截面剖面图；
图3是本发明实施例制备的一种复合结构的GaN/CdZnTe薄膜紫外光探测器的X衍射衍射(XRD)图；
图4是本发明实施例制备的一种复合结构的GaN/CdZnTe薄膜紫外光探测器的I-V曲线图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
实施例
一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，该方法包括如下步骤：
(1). CdZnTe多晶升华源的准备：将CdZnTe多晶体研磨成粉末作为升华源，所述的CdZnTe多晶体为峨眉半导体材料厂生产的商用CdZnTe多晶体基片；(2). 衬底预处理：采用镀有氮化镓(GaN)的单晶硅片作为衬底，将衬底分别用丙酮、酒精、去离子水分别清洗15分钟，洗去衬底表面的杂质和有机物，再用氮气吹干后放入近空间升华反应室内；
(3).CdZnTe薄膜的生长过程：开机械泵抽真空，将升华室内气压抽至5pa以下；开卤素灯将升华源和衬底分别加热到600℃、550℃；生长20min后，关闭卤素灯，待样品冷却至室温后，关闭机械泵，取出样品，即得到GaN/CdZnTe薄膜；
(4).GaN/CdZnTe薄膜紫外光探测器制作：采用蒸镀法向上述GaN/CdZnTe薄膜表面蒸镀厚为100nm的金电极，然后将金电极放在N 2气体氛围下于450℃退火30min ，使GaN/CdZnTe薄膜与金电极之间形成更好的欧姆接触，最后制得复合结构的GaN/CdZnTe薄膜紫外光探测器，如图1、图2所示。
从图1、2中可以看出，所示的CdZnTe薄膜在GaN衬底上生长良好，颗粒成型且较为致密，厚度也达到了45μm。
对本实施例制得的复合结构的GaN/CdZnTe薄膜紫外光探测器进行X射线衍射（XRD）分析测试，如图3所示， 图中，（111）晶面处、（333）晶面处所示的衍射峰分别对应的衍射角为23.980°、76.900°，从图3中看出，（111）晶面、（333）晶面处所示的衍射峰与10%Zn含量的CdZnTe的衍射峰匹配良好，且所得CdZnTe薄膜沿（111）晶向择优生长。
如图4所示，用4200-SCS半导体特性分析系统测量上述实施例制备的复合结构的GaN/CdZnTe薄膜紫外光探测器在黑暗和252nm的紫外光照射条件下的I-V 特性曲线，从图4中可以看出，本发明的复合结构的GaN/CdZnTe薄膜紫外光探测器与金属电极形成欧姆接触，接触良好，且施加10V偏压时，暗电流达到10-10A，光照下到达10-8A，光电流与暗电流之间的差值大，具有良好的响应特性。

Claims (2)

1.一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，其特征在于，该方法包括如下步骤：
(1) CdZnTe多晶升华源的准备：将CdZnTe多晶体研磨成粉末作为升华源；
(2) 衬底预处理：采用镀有GaN的单晶硅片作为衬底，将衬底分别用丙酮、酒精、去离子水分别清洗15分钟，洗去衬底表面的杂质和有机物，再用氮气吹干后放入近空间升华反应室内；
(3) CdZnTe薄膜的生长过程：开机械泵抽真空，将近空间升华反应室内气压抽至5pa以下；开卤素灯将升华源和衬底分别加热到600℃、550℃；生长20min后，关闭卤素灯，待样品冷却至室温后，关闭机械泵，取出样品，即得到GaN/CdZnTe薄膜；
(4) GaN/CdZnTe薄膜紫外光探测器制作：采用蒸镀法向上述GaN/CdZnTe薄膜表面蒸镀厚为100nm的金电极，然后将金电极放在N2气体氛围下于450℃退火30min ，使GaN/CdZnTe薄膜与金电极之间形成更好的欧姆接触，最后制得薄膜复合结构的GaN/CdZnTe薄膜紫外光探测器。
2.根据权利要求1 所述的一种复合结构的GaN/CdZnTe薄膜紫外光探测器的制备方法，其特征在于，上述步骤(1)中所述的CdZnTe多晶体为峨眉半导体材料厂生产的商用CdZnTe多晶体基片。
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Growth Characteristics of CdZnTe Layers Grown by Metalorganic Vapor Phase Epitaxy Using Dimethylzinc, Dimethylcadmium, Diethyltelluride, and Dimethyltelluride as Precursors;K. YASUDA, et al.;《Journal of Electronic Materials》;19981231;第27卷(第8期);948-953
Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE;RICHARD KODAMA, et al.;《ELECTRONIC MATERIALS》;20131008;第42卷(第11期);3239-3242
Study of Te aggregation at the initial growth stage of CdZnTe films deposited by CSS;Junning Gao, et al.;《Appl Phys A Materials Science Processing》;20120330;448-450

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