CN107170800B - 一种复合钝化层栅场板GaN HEMT元胞结构及器件 - Google Patents
一种复合钝化层栅场板GaN HEMT元胞结构及器件 Download PDFInfo
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Abstract
本发明公开了一种复合钝化层栅场板GaN HEMT器件元胞结构，制作该器件的半导体材料为GaN外延片或单晶片，衬底可以是Si，SiC或者蓝宝石等，器件表面在栅和漏之间的钝化层为复合钝化层，如图1所示，在栅场板底下的钝化层淀积或生长的是Low‑K的介质，而栅场板之外的部分为High‑K介质层。其中，High‑K钝化层有助于提高器件的耐压和保持较低的表面漏电，而栅场板结构下的Low‑K介质层降低了器件场板引起的寄生电容，有助于提升器件的频率特性。
Description
技术领域
本发明涉及一种新型复合钝化层栅场板GaN HEMT器件元胞结构，属于H01L 27/00类半导体器件技术领域。
背景技术
GaN HEMT器件具有的高频、高功率密度以及高工作温度的优点使其成为微波大功率器件以及电力电子器件发展的新方向。基于新型材料GaN研发的功率器件及其功率放大器被广泛地应用于军事、民用商业以及消费等领域，特别是对于即将在2020年实现商用的5G技术而言，GaN功放管必将占据重要地位。在军事领域，毫米波和微波功率放大器应用于雷达、通信以及智能武器系统之中，而在商业领域中，主要将功率放大器用于高速率的通信系统之中以及汽车防撞雷达等。AlGaN/GaN HEMT良好的高频高功率性能使其在微波功率放大器和高温数字电路领域颇具竞争力。AlGaN/GaN异质结由于较强的自发极化和压电极化，在AlGaN/GaN界面处存在高浓度的二维电子气。与Si基及GaAs基器件相比，AlGaN/GaNHEMT输出功率密度表现出了一个量级的提高。然而，由于表面电子陷阱的存在，未钝化的AlGaN/GaN HEMT器件常表现出严重的电流崩塌现象，输出性能大幅下降；同时由于表面漏电的存在，栅漏耐压的提升也受到制约。研究表明，通过对器件表面进行钝化可以有效抑制电流崩塌效应，而采用场板结构可以提高器件耐压。2004年U.K.Mishra团队报道了具有栅场板结构的AlGaN/GaNHEMT微波功率器件，研究者认为栅场板结构不仅能在硅器件中那样提升器件耐压能力，还能显著降低陷阱效应，其原理可参阅文献Y.F.Wu,A.Saxler,M.Moore,etal.30-W/mm GaN HEMTs by Field Plate Optimization[J].IEEE Electron DeviceLetters.但是，采用场板结构会引入寄生电容，严重影响器件的频率特性，制约器件在高频高压条件下工作的可靠性。采用低K值材料的钝化层可以减小场板寄生电容，但低K材料的耐压能力较差。这使得采用场板结构设计时对于钝化材料的选择在频率特性和耐压间构成了矛盾。
发明内容
本发明的目的在于克服上述已有技术的缺点，提供一种优化的复合钝化层和场板结构设计，兼顾器件的频率特性和耐压能力。
为实现上述目的，本发明采取以下技术方案：
一种复合钝化层栅场板GaN HEMT器件元胞结构，制作该器件的半导体材料为GaN外延片或单晶片，衬底是Si，SiC或者蓝宝石，器件表面在栅和漏之间的钝化层为复合钝化层，在栅场板底下的钝化层为Low-K介质层，而栅场板之外的钝化层部分为High-K介质层。
进一步，所述源S和漏D欧姆接触金属为Ti/Al/Ni/Au合金或 Ti/Al/Ti/Au合金或Ti/Al/Mo/Au合金。
进一步，所述栅极及栅场板金属为Ni/Au合金或Pt/Au合金或 Pd/Au合金。
进一步，所述High-K介质层为单层或者多层复合结构。
进一步，所述High-K介质层的材料是SiO2、SiNx、Al2O3、AlN、 HfO2、MgO、Sc2O3、Ga2O3、AlHFOx、HFSiON等材料中的一种或任意几种。
进一步，所述High-K介质层的厚度在10nm～5000nm之间；通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀，在器件接触界面上沉积形成。
进一步，所述Low-kLow-K介质层为单层或者多层复合结构。
进一步，所述介质层的材料是CDO、SiOF、SiCFO、SiCOH和各种SOD材料(Spin-on-Dielectric)中的一种或任意几种。
进一步，所述Low-k介质层厚度在10nm～5000nm之间；Low-k 介质层通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀或Spin-on，在器件接触界面上沉积或旋涂形成；或者是Air-Gap技术形成的Air-Gap。
进一步，所述Low-k介质层先于High-k介质层形成，然后通过光刻定义出需要填充High-K介质的窗口后，腐蚀或者刻蚀掉Low-k 介质，再进行High-k介质的沉淀生长；或者先沉积生长High-k介质层后，通过光刻定义出需要填充Low-K介质的窗口，腐蚀或者刻蚀掉High-k介质，再进行Low-k介质的涂布或沉淀生长。
本发明还公开了一种GaN HEMT器件，采用上述元胞结构。
本发明复合钝化层栅场板GaN HEMT结构，制作该器件的半导体材料为GaN外延片或单晶片，衬底可以是Si，SiC或者蓝宝石等，器件表面在栅和漏之间的钝化层为复合钝化层，如图1所示，在栅场板底下的钝化层淀积或生长的是Low-K的介质，而栅场板之外的部分为 High-K介质层。其中，High-K钝化层有助于提高器件的耐压和保持较低的表面漏电，而栅场板结构下的Low-K介质层降低了器件场板引起的寄生电容，有助于提升器件的频率特性。
附图说明
图1为本发明复合钝化层栅场板GaN HEMT器件元胞结构的结构示意图。
具体实施方式
下面利用实施例对本发明进行更全面的说明。本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。
如图1所示，本实施例中的复合钝化层栅场板GaN HEMT器件元胞结构，制作该器件的半导体材料为GaN外延片，也可以是单晶片，衬底可以是Si，也可以是SiC或者蓝宝石。元胞结构中，在栅和漏之间的钝化层为Low-K介质层和High-K介质层组成的复合钝化层。在栅场板底下是Low-K介质层；栅场板结构下的Low-K介质层降低了器件场板引起的寄生电容，有助于提升器件的频率特性。栅场板之外的钝化层部分为High-K介质层；High-K钝化层有助于提高器件的耐压和保持较低的表面漏电。
其中，源S和漏D欧姆接触金属可以选用为Ti/Al/Ni/Au合金或Ti/Al/Ti/Au合金，也可以是Ti/Al/Mo/Au合金等材料；以形成较好的欧姆接触。
GaN HEMT器件的栅极及栅场板金属可以选用为Ni/Au合金或 Pt/Au合金；也可以由Pd/Au合金制成。
High-K介质层可以是单层结构也可以是多层复合结构。High-K 介质层的材料是SiO2、SiNx、Al2O3、AlN、HfO2、MgO、Sc2O3、Ga2O3、 AlHFOx、HFSiON等材料中的一种或任意几种混合制成。High-K介质层的厚度应控制在10nm～5000nm之间；通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀，在High-K介质层的材料在器件接触界面上沉积或生长形成。
Low-K介质层也可以是单层机构或者多层复合结构。Low-K介质层的材料是CDO、SiOF、SiCFO、SiCOH和各种SOD材料 (Spin-on-Dielectric)中的一种或任意几种混合制成。Low-K介质层厚度应控制在10nm～5000nm之间；Low-k介质层可以通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀或Spin-on等方法，在器件接触界面上沉积或旋涂形成；Low-k介质层还可以是通过Air-Gap技术形成的Air-Gap。
Low-k介质层可以先于High-k介质层形成，然后通过光刻定义出需要填充High-K介质的窗口后，腐蚀或者刻蚀掉Low-k介质，再进行High-k介质的沉淀生长。还可以先沉积生长High-k介质层后，通过光刻定义出需要填充Low-K介质的窗口，腐蚀或者刻蚀掉High-k介质，再进行Low-k介质的涂布或沉淀生长。
上述示例只是用于说明本发明，除此之外，还有多种不同的实施方式，而这些实施方式都是本领域技术人员在领悟本发明思想后能够想到的，故，在此不再一一列举。
Claims (11)
1. 一种复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，制作该器件的半导体材料为GaN外延片或单晶片，衬底是Si，SiC或者蓝宝石，器件表面在栅和漏之间的钝化层为复合钝化层，在栅场板底下的钝化层淀积或生长的是Low-K介质层，而栅场板之外的钝化层部分为High-K介质层。
2. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，源和漏欧姆接触金属为Ti/Al/Ni/Au 合金或Ti/Al/Ti/Au 合金或Ti/Al/Mo/Au 合金。
3. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述栅及栅场板金属为Ni/Au 合金或Pt/Au 合金或Pd/Au 合金。
4. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述High-K介质层为单层或者多层复合结构。
5. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述High-K介质层的材料是SiO2、SiNx、Al2O3、AlN、HfO2、MgO、Sc2O3、Ga2O3、AlHFOx、HFSiON材料中的一种或任意几种。
6. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述High-K介质层的厚度在10nm ～ 5000nm 之间；通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀，在器件接触界面上沉积形成。
7. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于所述Low-K介质层为单层或者多层复合结构。
8. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述Low-K介质层的材料是CDO、SiOF、SiCFO、SiCOH 和各种SOD材料（Spin-on-Dielectric）中的一种或任意几种。
9. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述Low-K介质层厚度在10nm ～ 5000nm 之间；Low-k介质层通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀或Spin-on，在器件接触界面上沉积或旋涂形成；或者是Air-Gap技术形成的Air-Gap。
10. 如权利要求1所述的复合钝化层栅场板GaN HEMT器件元胞结构，其特征在于，所述Low-k介质层先于High-k介质层形成，然后通过光刻定义出需要填充High-K介质的窗口后，腐蚀或者刻蚀掉Low-k介质，再进行High-k介质的沉淀生长；或者先沉积生长High-k介质层后，通过光刻定义出需要填充Low-K介质的窗口，腐蚀或者刻蚀掉High-k介质，再进行Low-k介质的涂布或沉淀生长。
11. 一种GaN HEMT器件，其特征在于，所述GaN HEMT器件采用权利要求1至10中任一项所述的元胞结构。
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