CN107167668A - 1 40GHz is in piece S parameter measuring method - Google Patents

1 40GHz is in piece S parameter measuring method Download PDF

Info

Publication number
CN107167668A
CN107167668A CN201710379464.1A CN201710379464A CN107167668A CN 107167668 A CN107167668 A CN 107167668A CN 201710379464 A CN201710379464 A CN 201710379464A CN 107167668 A CN107167668 A CN 107167668A
Authority
CN
China
Prior art keywords
piece
parameter
calibration
40ghz
measuring method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710379464.1A
Other languages
Chinese (zh)
Inventor
刘晨
吴爱华
孙静
梁法国
王帮
王一帮
栾鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 13 Research Institute
Original Assignee
CETC 13 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 13 Research Institute filed Critical CETC 13 Research Institute
Priority to CN201710379464.1A priority Critical patent/CN107167668A/en
Publication of CN107167668A publication Critical patent/CN107167668A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/28Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

The invention discloses a kind of 1 40GHz in piece S parameter measuring method, it is related to microwave/millimeter wave in piece S parameter field of measuring techniques, including step:1), design piece S parameter verify part way of realization;2), design piece S parameter verify part structure;3), simulation optimization piece S parameter verify part;4), piece S parameter checking part calibration;5), the calibration results uncertainty evaluation;The present invention is by designing 1 40GHz in piece S parameter measuring method, verify that the way of realization of part, design verify that the structure of part, simulation optimization verify part in piece S parameter, verify measurement of the steps such as part calibration, the calibration results uncertainty evaluation realization in piece S parameter in piece S parameter in piece S parameter in piece S parameter by designing, such a method temperature in use is 55 DEG C 125 DEG C simultaneously, increases Range of measuring temp.

Description

1-40GHz is in piece S parameter measuring method
Technical field
The present invention relates to microwave/millimeter wave in piece S parameter field of measuring techniques, more particularly to a kind of 1-40GHz is in piece S Measurement method of parameters.
Background technology
The instrument measured in piece S parameter (namely scattering parameter, is an important parameter in microwave transmission) is referred to as In piece S parameter measuring system, its mainly constitute including:Vector network analyzer and microwave probe platform, wherein vector network analysis Instrument is measuring instrument, and the coaxial or waveguide input/output end port of net will be sweared by microwave cable, the spy of microwave probe platform is connected to Syringe needle, so as to realize the connection of measurement signal and semiconductor chip.Due to being the S parameter measurement of chip-scale, call it as in the industry In the measurement of piece S parameter.
Before microwave probe platform invention, the test of the S parameter of chip all after packaging test fixture (it is generally coaxial or Waveguide interface, so as to be directly connected to vector network analyzer) on carry out, it is clear that its measurement result contains the shadow of test fixture Ring, measurement result is there is larger uncertainty, set up to chip model and quality evaluation brings puzzlement.Microwave probe platform Invention, realizes the direct measurement to bare chip, is sought peace quality control so as to reduce chip measurement cost, particularly chip list Cost.By the development of decades, have become examination semiconductor core tablet quality in piece S parameter measuring system and level is most important Survey tool.
At present, domestic measurement technology mechanism has been set up the metrology capability of vector network analyzer, that is, solves coaxial The S parameter magnitude tracing problem of (67GHz) and waveguide (110GHz) measurement pattern.But, lack the metering skill " in piece S parameter " Art means, cause " in piece S parameter " measurement data can not effectively trace to the source to National primary standard.This metering present situation constrains semiconductor The development of chip industry, have impact on the research and development progress of high-end microelectronic component.
In the world, the advanced quantitative study mechanism by representative of U.S. NIST, solved within 40GHz in piece meter Amount problem.Its overall plan is:The design philosophy of " on-wafer classes " calibrating device and checking part is proposed, i.e., the two is using with partly leading Body chip same substrate material, identical traffic cable architecture, same process, and make on the same chip, so as to eliminate substrate The influence amounts such as material, transmission linear dimension, probe pinpoint transition influence on the accuracy of measurement finally in piece S parameter.Eventually through testing Certificate realizes the gage work in piece S parameter.The deficiency of external scheme is mainly reflected in, can only realize normal temperature in piece S parameter Transmission of quantity value.
The content of the invention
The technical problem to be solved in the present invention is to join for above-mentioned the deficiencies in the prior art there is provided a kind of 1-40GHz in piece S Number measuring method, such a measuring method temperature applicable range is -55 DEG C -125 DEG C, is solved accurate in piece S parameter measuring system value The problem of exactness is verified.
In order to solve the above technical problems, the technical solution used in the present invention is:A kind of 1-40GHz is measured in piece S parameter Method, including step:1), the way of realization of part is verified in design in piece S parameter;2), the structure of part is verified in design in piece S parameter; 3), simulation optimization verifies part in piece S parameter;4), in the checking part calibration of piece S parameter;5), the calibration results uncertainty evaluation;
It is characterized in that:The step 2) in design piece S parameter verify part structure include substrate, metal tape line and nickel Chromium resistance;
The step 3) in calculated using the LineCalc software for calculation in ADS and obtain effective dielectric constant εeff, utilize Imitate permittivity εeffCalculate microwave signal relative phase change Δ Pdegree
Preferably, it is rapid 2) in piece S parameter checking part structure 400 μm -600 μm of substrate thickness, metal tape line thickness is 100nm-300nm, nichrome resistance resistance is 50 Ω/.
Preferably, backing material is GaAs.
Preferably, metal tape line is made using evaporation of metal manufacture craft.
Preferably, nichrome resistance is made using sputtering technology.
Preferably, step 4) comprise the following steps in the checking part calibration of piece S parameter:
A, determine environment temperature meet 23 DEG C ± 5 DEG C, ambient humidity≤80, and determine piece S parameter examine part calibration Temperature;
B, use vector network analyzer, microwave probe platform, temperature controller, various meterings level microwave cable and mismatch device Set up in piece S parameter scaling system;
C, adjustment temperature controller to predetermined temperature, and microwave probe decometer is monitored in real time using the film platinum resistor demarcated The temperature variations of disk;
D, after after the temperature stabilization of microwave probe decometer disk, use the multiline TRL calibrating devices school developed and defined Standard is in piece S parameter scaling system;
After the completion of E, calibration, the remainder error that scaling system is measured in piece standard component of the subsidiary technical indicator of selection, only When remainder error measurement result meets setting, scale operation could be carried out, otherwise needs to recalibrate scaling system;
F, using piece S parameter scaling system measurement examine part, to examine part calibration.
It is using the beneficial effect produced by above-mentioned technical proposal:The present invention is surveyed by designing 1-40GHz in piece S parameter Amount method, verifies that the way of realization of part, design verify that the structure of part, simulation optimization exist in piece S parameter by designing in piece S parameter Piece S parameter verifies part, verifies that the steps such as part calibration, the calibration results uncertainty evaluation realize the survey in piece S parameter in piece S parameter Amount, while such a method temperature in use is -55 DEG C -125 DEG C, increases Range of measuring temp.
Brief description of the drawings
Fig. 1 is the logical flow chart of the present invention.
Fig. 2 is the profile of CPW transmission lines.
Fig. 3 is the electric field of co-planar waveguide, magnetic field schematic diagram.
Fig. 4 is the transport module curve map of the thick ceramic co-planar waveguides of 0.254mm.
Embodiment
As shown in figure 1, being the logical flow chart of the present invention, altogether including 5 steps:1), design verifies part in piece S parameter Way of realization;2), the structure of part is verified in design in piece S parameter;3), simulation optimization verifies part in piece S parameter;4), in piece S parameter Verify part calibration;5), the calibration results uncertainty evaluation.
1), the way of realization of part is verified in design in piece S parameter:
Currently, domestic metering vector network analyzer, coaxial/waveguide checking part of selection has three kinds, is respectively:Standard Mismatch device, for measuring reflectance factor;Standard attenuator, for measuring transmission coefficient;Normal air line, for measuring transmission phase Position.
For the integrality of guarantee system, we are designed when piece S parameter verifies part way of realization, have used for reference existing skill Art.Specifically include:In piece mismatch device, for measuring reflectance factor;In piece attenuator, for measuring transmission coefficient;In piece transmission Line, for measuring transmission phase.Specific value and the technical indicator of design are shown in Table 1.
Table 1 verifies the way of realization and value, index of part in piece S parameter
2), the structure of part is verified in design in piece S parameter:
Co-planar waveguide (Coplanar Waveguide, abbreviation CPW) structure is that NIST exploitation normal temperature in the U.S. verifies part in piece Way of realization, its main advantage is to be easy to characterize and process.Below exemplified by piece transmission line, main design thought is described.
A kind of symmetrical structure planar transmission line in piece transmission line checking part, its center conductor on dielectric substrate and with What two ground connection conductive planes of center conductor the same side were constituted, there is no conductor coating in the another side of dielectric substrate.CPW is passed The profile of defeated line is as shown in Figure 2.The wherein width Wg of ground wire, the width W of center conductor, groove width S between center conductor and ground wire, The relative dielectric constant ε of substrater, metal layer thickness t and electrical conductivity k, substrate thickness H, length of transmission line L.
Co-planar waveguide belongs to two-conductor Transmission system, transmits quasi- TEM ripples, its electric field, Distribution of Magnetic Field such as Fig. 3 in cross section It is shown.The media plate of co-planar waveguide is considered as the waveguide with open boundary, its support surface wave propagation mode.Surface wave Mould be along perpendicular to interface direction, exponentially rate decays in the waveform transmitted along dielectric surface, air of the electromagnetic field outside medium, Field absorption is called surface wave in proximate dielectric.Surface wave is divided into two kinds of TE ripple and TM ripple.Surface wave has cut-off frequency. The cut-off frequency of wherein TE ripples is
The cut-off frequency of TM ripples is
C is the light velocity in upper two formula, and H is substrate thickness, εrFor the relative dielectric constant of substrate, n=1 in formula (1), 3, 5 ..., n=0,1,2,3 ... in formula (2).The most cutoff wavelength of low order TM0 ripples is infinity, therefore TM0 ripples are in all working ripple All exist under length.But it should be noted is that, when working frequency is less than the cut-off frequency of surface wave, ripple is not in cut-off State and be in order at radiation regimes.
When frequency is very low, co-planar waveguide is in CPW patterns, and other patterns of getting along well produce interaction, transmit quasi- TEM Ripple.With the rise of frequency, when less than surface wave critical frequency, there is " class surface wave mode ", surface wave passes through radiation energy Amount and CPW moulds produce certain coupling, obvious dispersion characteristics occur.As frequency is further raised, when the biography of CPW moulds The propagation phase constant for broadcasting phase constant and TM0 moulds is equal, the close coupling for occurring both of which, causes the decay of CPW patterns, this Individual close coupling frequency is called critical frequency.This critical frequency is relevant with surface wave modulus, substrate thickness and substrate boundary condition.
The critical frequency of TM0 ripples is
Fig. 4 is the transport module curve map of the thick ceramic co-planar waveguides of 0.254mm, and wherein left figure is that potsherd is suspended in sky In gas, right figure is that potsherd is placed on ground level, and Surface wave mode is TE0, TM0, TE1 and TM1 mould, and wherein TE0 and TM0 are Even mould, not cut-off frequency, TE1 and TM1 are strange moulds, there is cut-off frequency.There is ground level under right figure substrate, passed without TE0 moulds Broadcast.
In addition, co-planar waveguide has intrinsic resonant frequency, the frequency and intensity of resonance and its material and geometry in itself Size is relevant.
Analyzed more than, the major influence factors of coplanar waveguide transmission line characteristic include dispersion, surface wave and resonance, its Middle dispersion and surface wave are mainly influenceed for 25GHz-50GHz, and are also influenced each other from each other.We consider the above because Element, it is considered to flow technique, it is determined that using 400 μm -600 μm of substrate thickness, metal layer thickness 100nm- in piece S parameter checking part 300nm, metal level is made using evaporation technology, and resistance uses 50 Ω/ nichrome resistance, silicon nitride is added after completing blunt Change layer, anti-oxidation.
3), simulation optimization verifies part in piece S parameter:
The making for verifying part in piece transmission line will ensure microstrip line characteristic impedance value Z as far as possible0Equal to the impedance value 50 of system Ω.According to manufacture craft parameter, the dielectric constant of gallium arsenide substrate is 12.9,500 μm of thickness, and metal layer thickness is 300nm, profit With the LineCalc software for calculation in ADS, it may be determined that characteristic impedance be 50 Ω under, piece transmission line verify part width be 64 μm, 44 μm of spacing between center conductor and ground wire.
The effective dielectric constant ε of known delay lineeffWith the speed c of light in a vacuum, it is known that electromagnetic wave is in microstrip line Spread speed vp
ε in formulaeffFor effective dielectric constant, it considers an electromagnetic wave part and propagated in media as well, and a part is in atmosphere Propagation the fact that, εeffThe LineCalc softwares that can be provided with ADS are calculated and obtained.So length is relative for l transmission line Time delay tdelayFor:
Frequency is transmitted for f microwave signal in the transmission line, then after transmission line, microwave signal relative phase Changes delta PdegreeIt can be calculated with below equation:
4), in the checking part calibration of piece S parameter:
To examining part calibration to include following three part in piece S parameter:
1) standing-wave ratio under each frequency values of piece mismatch device of standing-wave ratio 1.1,1.50 and 2.00;
2) attenuation is 3dB, 10dB and 20dB attenuation under each frequency of piece attenuator;
3) the transmission phase under each frequency of piece transmission line.
In calibration process, in order to obtain the higher calibration degree of accuracy, it is necessary to strictly control calibration process.It is specific as follows:
1) 23 DEG C ± 5 DEG C of environment temperature satisfaction, ambient humidity≤80 are determined, and determine to examine the calibration of part in piece S parameter Temperature;
2) preferred PNA-X sequence of vectors Network Analyzers, Cascade microwave probe platforms, Temptronic temperature controls system System, and various metering level microwave cables, mismatch device are set up in piece S parameter scaling system;
3) adjustment high-low temperature controller is to predetermined temperature, and uses the real-time monitoring probe decometer of film platinum resistor demarcated The temperature variations of disk.
4) after temperature stabilization, system is calibrated in piece S parameter using the multiline TRL calibrating devices calibration developed and defined System;
5) after the completion of calibrating, the remainder error that scaling system is measured in piece standard component of the subsidiary technical indicator of selection, only When remainder error measurement result meets table 2 and required, scale operation could be carried out, otherwise needs to recalibrate scaling system;
6) part is examined using in the measurement of piece S parameter scaling system, to examining part calibration.
Remainder error after the calibration of the scaling system of table 2
5), the calibration results uncertainty evaluation:
The uncertainty of measurement of part the calibration results is examined in piece S parameter and after piece S parameter examines the calibration of part scaling system Remainder error, dynamic accuracy with examine part S parameter it is relevant, mathematical modeling is as follows:
Wherein:ΔS11(mag)、ΔS22(mag)--- the uncertainty of measurement of reflection amplitudes;
ΔS21(mag)、ΔS12(mag)--- the uncertainty of measurement of transmission amplitude;
ΔS21(phase)、ΔS12(phase)--- for the uncertainty of measurement of transmission phase;
EDF--- direction;EDR--- inverse direction;
ESF--- positive source matching;ESR--- reverse source matching;
ELF--- positive load matched;ELR--- reverse load is matched;
ERF--- righting reflex is tracked;ERR--- back reflection is tracked;
ETF--- forward direction transmission tracking;ETR--- reverse transfer is tracked;
EXF--- positive crosstalk;EXR--- reverse crosstalk;
AM--- amplitude dynamic accuracy;AP--- phase dynamic accuracy.
Wherein remainder error is calculated by the index of charter, and dynamic accuracy is calculated by the index of arrow net, specifically such as the institute of table 3 Show:
Table 3 examines the parameter value of part the calibration results uncertainty of measurement in piece high/low temperature S parameter
Parameter Symbol 23℃ -55℃ 125℃
Directionality ED -33dB -27dB -30dB
Source is matched ES -30dB -24dB -25dB
Load matched EL -27dB -25dB -25dB
Skin tracking ER ±0.20dB ±0.24dB ±0.28dB
Transmission tracking ET ±0.14dB ±0.19dB ±0.18dB
Crosstalk EX -90dB -90dB -90dB
Amplitude dynamic accuracy AM 0.05dB 0.05dB 0.05dB
Phase dynamic accuracy AP 0.5° 0.5° 0.5°
The uncertainty of measurement for examining part the calibration results in piece S parameter has two sources:
1) remainder error of part scaling system, dynamic accuracy is examined to introduce in piece high/low temperature S parameter, using uBRepresent;
2) introduced due to factors such as the repeatability and noise of measuring system, the repeatability sign of measurement result can be used, Using uARepresent.
Below only so that the 3dB in examining part in piece S parameter is in piece attenuator as an example, illustrate that calibration uncertainty is specifically evaluated Process.
After piece S parameter examines part scaling system to be calibrated respectively at 23 DEG C, -55 DEG C and 125 DEG C, part is examined in connection S parameters of the 3dB under piece attenuator, measurement different temperatures.
1. examine the u that part scaling system is introduced in piece S parameterB
The uncertainty of measurement u that part scaling system is introduced is examined in piece S parameterBAs shown in table 4.
The 3dB of table 4 transmits the partial uncertainty u of amplitude in piece attenuatorB
2. the u that measurement reproducibility is introducedA
Part scaling system is examined at 23 DEG C, -55 DEG C and 125 DEG C in piece S parameter, and after being calibrated respectively, 6 repetitions are surveyed The 3dB at 26.5GHz, 34GHz and 40GHz is measured in piece attenuator, measurement result is as shown in table 5.
The 3dB of table 5 transmits the repetition measurement result of amplitude in piece attenuator
According to data above, determine that measurement reproducibility is introduced not at each temperature by frequency 26.5GHz, 34GHz and 40GHz Degree of certainty component uA, as shown in table 6.
The 3dB of table 6 transmits the partial uncertainty u of amplitude in piece attenuatorA
3. the u of combined standard uncertaintycWith the U of expanded uncertainty
Because each component is mutually orthogonal, therefore its combined standard uncertaintyExpanded uncertainty U =kuc, k=2, as shown in table 7.
The 3dB of table 7 transmits the standard uncertainty evaluation result of amplitude in piece attenuator
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.

Claims (6)

1. a kind of 1-40GHz is in piece S parameter measuring method, including step:1), design piece S parameter verify part way of realization; 2), design piece S parameter verify part structure;3), simulation optimization piece S parameter verify part;4), piece S parameter checking part determine Mark;5), the calibration results uncertainty evaluation;
It is characterized in that:The step 2)Middle design verifies that the structure of part includes substrate, metal tape line and nickel chromium triangle electricity in piece S parameter Resistance;
The step 3)LineCalc software for calculation in middle utilization ADS, which is calculated, obtains effective dielectric constant, utilizes equivalent dielectric Constant calculations go out microwave signal relative phase change.
2. 1-40GHz according to claim 1 is in piece S parameter measuring method, it is characterised in that:The step 2)In in piece 450 μm -550 μm of substrate thickness in S parameter checking part structure, metal tape line thickness is 200nm-300nm, and nichrome resistance resistance is 50Ω/□。
3. 1-40GHz according to claim 1 is in piece S parameter measuring method, it is characterised in that:The backing material is GaAs。
4. 1-40GHz according to claim 1 is in piece S parameter measuring method, it is characterised in that:The metal tape line is used Evaporation of metal technique makes.
5. 1-40GHz according to claim 1 is in piece S parameter measuring method, it is characterised in that:The nichrome resistance is used Sputtering technology makes.
6. 1-40GHz according to claim 1 is in piece S parameter measuring method, it is characterised in that:The step 4)In piece S The calibration of Verification part comprises the following steps:
A, determine environment temperature meet 23 DEG C ± 5 DEG C, ambient humidity≤80, and determine piece S parameter examine part calibration temperature;
B, use vector network analyzer, microwave probe platform, temperature controller, various meterings level microwave cable and mismatch device set up In piece S parameter scaling system;
C, adjustment temperature controller to predetermined temperature, and microwave probe decometer disk is monitored in real time using the film platinum resistor demarcated Temperature variations;
D, after after the temperature stabilization of microwave probe decometer disk, existed using the multiline TRL calibrating devices calibration developed and defined Piece S parameter scaling system;
After the completion of E, calibration, the remainder error that scaling system is measured in piece standard component of the subsidiary technical indicator of selection, only surplus When remaining error measurement meets setting, scale operation could be carried out, otherwise needs to recalibrate scaling system;
F, using piece S parameter scaling system measurement examine part, to examine part calibration.
CN201710379464.1A 2017-05-25 2017-05-25 1 40GHz is in piece S parameter measuring method Pending CN107167668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710379464.1A CN107167668A (en) 2017-05-25 2017-05-25 1 40GHz is in piece S parameter measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710379464.1A CN107167668A (en) 2017-05-25 2017-05-25 1 40GHz is in piece S parameter measuring method

Publications (1)

Publication Number Publication Date
CN107167668A true CN107167668A (en) 2017-09-15

Family

ID=59820605

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710379464.1A Pending CN107167668A (en) 2017-05-25 2017-05-25 1 40GHz is in piece S parameter measuring method

Country Status (1)

Country Link
CN (1) CN107167668A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113609813A (en) * 2021-10-09 2021-11-05 深圳飞骧科技股份有限公司 Microstrip line modeling method, microstrip line modeling device and related equipment
CN115630617A (en) * 2022-12-22 2023-01-20 成都华兴汇明科技有限公司 S2P data conversion S2D model and ADS simulation file construction method
CN116341470A (en) * 2023-03-29 2023-06-27 南京米乐为微电子科技有限公司 Scattering parameter measurement method, design method and simulation method of connection structure

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448726A (en) * 2002-04-04 2003-10-15 电子科技大学 An arrangement for electrical magnetic medium electromagnetic quantity temperature variation testing using ridge waveguide
JP4149428B2 (en) * 2004-10-14 2008-09-10 国立大学法人 電気通信大学 Vector network analyzer and calibration method thereof
EP1960797B1 (en) * 2005-12-14 2009-03-04 Rohde & Schwarz GmbH & Co. KG Method for measuring the noise factor of a device under test by means of a network analyzer
CN202256521U (en) * 2011-09-05 2012-05-30 瞿纯昊 S parameter measurement device
CN103364752A (en) * 2013-07-19 2013-10-23 中国电子科技集团公司第十三研究所 Field calibration method of on-wafer load traction measurement system
CN104502878A (en) * 2014-12-26 2015-04-08 中国电子科技集团公司第十三研究所 Microwave GaAs substrate on-chip S parameter microstrip line TRL (transistor resistor logic) calibrating member
CN104515907A (en) * 2013-09-30 2015-04-15 上海霍莱沃电子系统技术有限公司 Scattering parameter testing system and implementation method thereof
CN104865453A (en) * 2015-06-12 2015-08-26 中国电子科技集团公司第十三研究所 Terahertz on-chip scattering parameter measurement calibration piece and preparation method thereof
CN104991215A (en) * 2015-07-31 2015-10-21 中国电子科技集团公司第十三研究所 On-chip parameter coplanar waveguide TRL calibration piece
CN106405462A (en) * 2016-08-30 2017-02-15 中国电子科技集团公司第十三研究所 On-chip scattering parameter source tracing and uncertainty assessment method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1448726A (en) * 2002-04-04 2003-10-15 电子科技大学 An arrangement for electrical magnetic medium electromagnetic quantity temperature variation testing using ridge waveguide
JP4149428B2 (en) * 2004-10-14 2008-09-10 国立大学法人 電気通信大学 Vector network analyzer and calibration method thereof
EP1960797B1 (en) * 2005-12-14 2009-03-04 Rohde & Schwarz GmbH & Co. KG Method for measuring the noise factor of a device under test by means of a network analyzer
CN202256521U (en) * 2011-09-05 2012-05-30 瞿纯昊 S parameter measurement device
CN103364752A (en) * 2013-07-19 2013-10-23 中国电子科技集团公司第十三研究所 Field calibration method of on-wafer load traction measurement system
CN104515907A (en) * 2013-09-30 2015-04-15 上海霍莱沃电子系统技术有限公司 Scattering parameter testing system and implementation method thereof
CN104502878A (en) * 2014-12-26 2015-04-08 中国电子科技集团公司第十三研究所 Microwave GaAs substrate on-chip S parameter microstrip line TRL (transistor resistor logic) calibrating member
CN104865453A (en) * 2015-06-12 2015-08-26 中国电子科技集团公司第十三研究所 Terahertz on-chip scattering parameter measurement calibration piece and preparation method thereof
CN104991215A (en) * 2015-07-31 2015-10-21 中国电子科技集团公司第十三研究所 On-chip parameter coplanar waveguide TRL calibration piece
CN106405462A (en) * 2016-08-30 2017-02-15 中国电子科技集团公司第十三研究所 On-chip scattering parameter source tracing and uncertainty assessment method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
吴爱华 等: "在片S参数测量系统校准技术研究", 《宇航计测技术》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113609813A (en) * 2021-10-09 2021-11-05 深圳飞骧科技股份有限公司 Microstrip line modeling method, microstrip line modeling device and related equipment
CN115630617A (en) * 2022-12-22 2023-01-20 成都华兴汇明科技有限公司 S2P data conversion S2D model and ADS simulation file construction method
CN115630617B (en) * 2022-12-22 2023-04-07 成都华兴汇明科技有限公司 S2P data conversion S2D model and ADS simulation file construction method
CN116341470A (en) * 2023-03-29 2023-06-27 南京米乐为微电子科技有限公司 Scattering parameter measurement method, design method and simulation method of connection structure
CN116341470B (en) * 2023-03-29 2023-11-03 南京米乐为微电子科技有限公司 Scattering parameter measurement method, design method and simulation method of connection structure

Similar Documents

Publication Publication Date Title
CN104502878B (en) Microwave GaAs substrate is in piece S parameter microstrip line TRL calibrating devices
CN107861050B (en) A method of On-wafer measurement is carried out using vector network analyzer
Lee et al. An accurate broadband measurement of substrate dielectric constant
CN106772172B (en) In the design method of piece high/low temperature S parameter TRL calibration component
US7532014B2 (en) LRL vector calibration to the end of the probe needles for non-standard probe cards for ATE RF testers
CN104991215A (en) On-chip parameter coplanar waveguide TRL calibration piece
CN109669075A (en) The lossless reflectance measurement methods of medium complex dielectric permittivity based on open rectangle waveguide
CN107167668A (en) 1 40GHz is in piece S parameter measuring method
CN106405462A (en) On-chip scattering parameter source tracing and uncertainty assessment method
Queffelec et al. Broad-band characterization of magnetic and dielectric thin films using a microstrip line
Maode et al. An improved open-ended waveguide measurement technique on parameters/spl epsiv//sub/spl gamma//and/spl mu//sub/spl gamma//of high-loss materials
US8659315B2 (en) Method for printed circuit board trace characterization
Sakamaki et al. Improvement of on‐wafer measurement accuracy with RF signal detection technique at millimetre‐wave frequencies
CN204832482U (en) At piece S parameter co -planar waveguide TRL calibration piece
Rudd et al. Determining high-frequency conductivity based on shielding effectiveness measurement using rectangular waveguides
Moravek et al. Precise measurement using coaxial-to-microstrip transition through radiation suppression
Hasar A new microwave method for electrical characterization of low-loss materials
CN109781831A (en) A method of measurement soft magnetic film high frequency magnetic conductivity
CN111795979A (en) Test method for measuring complex dielectric constant and complex permeability of film sample
Zhu et al. On-wafer measurement of microstrip-based circuits with a broadband vialess transition
Caspers Impedance determination from bench measurements
Sakamaki et al. Accuracy improvement of on-wafer measurement at millimeter-wave frequency by a full-automatic RF probe-tip alignment technique
Moravek et al. Measurement and simulation of coaxial to microstrip transitions’ radiation properties and substrate influence
Votsi et al. Experimental verification and imaging of radiation due to coaxial-to-microstrip transitions
Sakamaki et al. Long-term stability test on on-wafer measurement system in NMIJ

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170915

RJ01 Rejection of invention patent application after publication